Showing 1–38 of 38 results for author: Fusil, S

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Authors: Diogo C. Vaz, Chia-Ching Lin, John J. Plombon, Won Young Choi, Inge Groen, Isabel C. Arango, Andrey Chuvilin, Luis E. Hueso, Dmitri E. Nikonov, Hai Li, Punyashloka Debashis, Scott B. Clendenning, Tanay A. Gosavi, Yen-Lin Huang, Bhagwati Prasad, Ramamoorthy Ramesh, Aymeric Vecchiola, Manuel Bibes, Karim Bouzehouane, Stephane Fusil, Vincent Garcia, Ian A. Young, Fèlix Casanova

Abstract: With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a rel… ▽ More With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a relatively unexplored pathway with sparse results at a device level. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for the writing, and spin-to-charge current conversion between CoFe and Pt, for the reading. Unlike other current-based spintronic devices, magnetization writing is driven solely by voltage pulses. We show that, upon electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. The voltage-induced switching is supported through a combination of piezoresponse, magnetic force microscopy, and scanning nitrogen-vacancy magnetometry, where magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, as well as a new avenue for low-power beyond-CMOS technologies. △ Less

Submitted 23 February, 2023; originally announced February 2023.

Comments: 17 pages, 5 figures

Visualizing giant ferroelectric gating effects in large-scale WSe$_2$/BiFeO$_3$ heterostructures

Authors: Raphaël Salazar, Sara Varotto, Céline Vergnaud, Vincent Garcia, Stéphane Fusil, Julien Chaste, Thomas Maroutian, Alain Marty, Frédéric Bonell, Debora Pierucci, Abdelkarim Ouerghi, François Bertran, Patrick Le Fèvre, Matthieu Jamet, Manuel Bibes, Julien Rault

Abstract: Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonst… ▽ More Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferroic oxide, and WSe$_2$, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe$_2$ is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO$_3$ films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe$_2$ and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO$_3$. Such a strong shift opens new perspectives in the efficient manipulation of TMDs properties by proximity effects. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Imaging topological defects in a non-collinear antiferromagnet

Authors: Aurore Finco, Angela Haykal, Stéphane Fusil, Pawan Kumar, Pauline Dufour, Anne Forget, Dorothée Colson, Jean-Yves Chauleau, Michel Viret, Nicolas Jaouen, Vincent Garcia, Vincent Jacques

Abstract: We report on the formation of topological defects emerging from the cycloidal antiferromagnetic order at the surface of bulk BiFeO$_3$ crystals. Combining reciprocal and real-space magnetic imaging techniques, we first observe, in a single ferroelectric domain, the coexistence of antiferromagnetic domains in which the antiferromagnetic cycloid propagates along different wavevectors. We then show t… ▽ More We report on the formation of topological defects emerging from the cycloidal antiferromagnetic order at the surface of bulk BiFeO$_3$ crystals. Combining reciprocal and real-space magnetic imaging techniques, we first observe, in a single ferroelectric domain, the coexistence of antiferromagnetic domains in which the antiferromagnetic cycloid propagates along different wavevectors. We then show that the direction of these wavevectors is not strictly locked to the preferred crystallographic axes as continuous rotations bridge different wavevectors. At the junctions between the magnetic domains, we observe topological line defects identical to those found in a broad variety of lamellar physical systems with rotational symmetries. Our work establishes the presence of these magnetic objects at room temperature in the multiferroic antiferromagnet BiFeO$_3$, offering new possibilities for their use in spintronics. △ Less

Submitted 4 February, 2022; originally announced February 2022.

Comments: 7 pages, 4 figures, supplemental material as ancillary file

Voltage-Controlled Reconfigurable Magnonic Crystal at the Submicron Scale

Authors: Hugo Merbouche, Isabella Boventer, Victor Haspot, Stephan Fusil, Vincent Garcia, Diane Gouere, Cecile Carretero, Aymeric Vecchiola, Romain Lebrun, Paolo Bortolotti, Laurent Vila, Manuel Bibes, Agnes Barthelemy, Abdelmadjid Anane

Abstract: Multiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics {\color{black} is expected to} eventual… ▽ More Multiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics {\color{black} is expected to} eventually lead to the large-scale integration of magnonic devices. However, a compact voltage-controlled, on demand reconfigurable magnonic system has yet to be shown. Here, we introduce the combination of multiferroics with ferromagnets in a fully epitaxial heterostructure to achieve such voltage-controlled and reconfigurable magnonic systems. Imprinting a remnant electrical polarization in thin multiferroic $\mathrm{BiFeO_3}$ with a periodicity of $500\,\mathrm{nm}$ yields a modulation of the effective magnetic field in the micron-scale, ferromagnetic $\mathrm{La_{2/3}Sr_{1/3}MnO_3}$ magnonic waveguide. We evidence the magneto-electrical coupling by characterizing the spin wave propagation spectrum in this artificial, voltage induced, magnonic crystal and demonstrate the occurrence of a robust magnonic bandgap with $>20 \,\mathrm{dB}$ rejection. △ Less

Submitted 16 May, 2021; originally announced May 2021.

Patterning enhanced tetragonality in BiFeO3 thin films with effective negative pressure by helium implantation

Authors: C. Toulouse, J. Fischer, S. Farokhipoor, L. Yedra, F. Carla, A. Jarnac, E. Elkaim, P. Fertey, J. -N. Audinot, T. Wirtz, B. Noheda, V. Garcia, S. Fusil, I. Peral Alonso, M. Guennou, J. Kreisel

Abstract: Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and patterning down to the nanometer resolution, which is of interest for device applications. We present here a study of bismuth ferrite (BiFeO3) films wh… ▽ More Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and patterning down to the nanometer resolution, which is of interest for device applications. We present here a study of bismuth ferrite (BiFeO3) films where strain was patterned locally by helium implantation. Our combined Raman, XRD and TEM study shows that the implantation causes an elongation of the BiFeO3 unit cell and ultimately a transition towards the so-called super-tetragonal polymorph via states with mixed phases. In addition, TEM reveals the onset of amorphization at a threshold dose that does not seem to impede the overall increase in tetragonality. The phase transition from the R-like to T-like BiFeO3 appears as first-order in character, with regions of phase coexistence and abrupt changes in lattice parameters. △ Less

Submitted 15 February, 2021; originally announced February 2021.

Journal ref: Physical Review Materials, 5, 024404, 2021

Real-space imaging of non-collinear antiferromagnetic order with a single spin magnetometer

Authors: I. Gross, W. Akhtar, V. Garcia, L. J. Martínez, S. Chouaieb, K. Garcia, C. Carrétéro, A. Barthélémy, P. Appel, P. Maletinsky, J. -V. Kim, J. Y. Chauleau, N. Jaouen, M. Viret, M. Bibes, S. Fusil, V. Jacques

Abstract: While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem and often possess remarkable extra functionalities: non-collinear spin order may break space-inversion symmetry and t… ▽ More While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem and often possess remarkable extra functionalities: non-collinear spin order may break space-inversion symmetry and thus allow electric-field control of magnetism, or produce emergent spin-orbit effects, which enable efficient spin-charge interconversion. To harness these unique traits for next-generation spintronics, the nanoscale control and imaging capabilities that are now routine for ferromagnets must be developed for antiferromagnetic systems. Here, using a non-invasive scanning nanomagnetometer based on a single nitrogen-vacancy (NV) defect in diamond, we demonstrate the first real-space visualization of non-collinear antiferromagnetic order in a magnetic thin film, at room temperature. We image the spin cycloid of a multiferroic BiFeO$_3$ thin film and extract a period of $\sim70$ nm, consistent with values determined by macroscopic diffraction. In addition, we take advantage of the magnetoelectric coupling present in BiFeO$_3$ to manipulate the cycloid propagation direction by an electric field. Besides highlighting the unique potential of NV magnetometry for imaging complex antiferromagnetic orders at the nanoscale, these results demonstrate how BiFeO$_3$ can be used as a versatile platform for the design of reconfigurable nanoscale spin textures. △ Less

Submitted 24 November, 2020; originally announced November 2020.

Journal ref: Nature 549, 252-256 (2017)

A switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO$_3$

Authors: Julien Bréhin, Felix Trier, Luis M. Vicente-Arche, Pierre Hemme, Paul Noël, Maxen Cosset-Chéneau, Jean-Philippe Attané, Laurent Vila, Anke Sander, Yann Gallais, Alain Sacuto, Brahim Dkhil, Vincent Garcia, Stéphane Fusil, Agnès Barthélémy, Maximilien Cazayous, Manuel Bibes

Abstract: Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an extern… ▽ More Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Journal ref: Published on April 16, 2020 as Phys. Rev. Materials 4, 041002(R) (2020)

A journey into the tuneable antiferromagnetic spin textures of BiFeO3

Authors: A. Haykal, J. Fischer, W. Akhtar, J. -Y. Chauleau, D. Sando, A. Finco, C. Carretero, N. Jaouen, M. Bibes, M. Viret, S. Fusil, V. Jacques, V. Garcia

Abstract: Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the submicron scale. Here we image a wide variety of antiferromagnetic spin textures in multiferroic BiFeO3 thin films that can be tuned by strain and ma… ▽ More Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the submicron scale. Here we image a wide variety of antiferromagnetic spin textures in multiferroic BiFeO3 thin films that can be tuned by strain and manipulated by electric fields through room temperature magnetoelectric coupling. Using piezoresponse force microscopy and scanning NV magnetometry in self-organized ferroelectric patterns of BiFeO3, we reveal how strain stabilizes different types of non-collinear antiferromagnetic states (bulk-like and exotic spin cycloids) as well as collinear antiferromagnetic textures. Beyond these local-scale observations, resonant elastic X-ray scattering confirms the existence of both types of spin cycloids. Finally, we show that electric-field control of the ferroelectric landscape induces transitions either between collinear and non-collinear states or between different cycloids, offering perspectives for the design of reconfigurable antiferromagnetic spin textures on demand. △ Less

Submitted 28 December, 2019; originally announced December 2019.

Giant topological Hall effect in correlated oxide thin films

Authors: Lorenzo Vistoli, Wenbo Wang, Anke Sander, Qiuxiang Zhu, Blai Casals, Rafael Cichelero, Agnès Barthélémy, Stéphane Fusil, Gervasi Herranz, Sergio Valencia, Radu Abrudan, Eugen Weschke, Kazuki Nakazawa, Hiroshi Kohno, Jacobo Santamaria, Weida Wu, Vincent Garcia, Manuel Bibes

Abstract: Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in t… ▽ More Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in the presence of correlations remains unclear. Here we demonstrate a very large topological Hall effect (THE) in thin films of a lightly electron-doped charge-transfer insulator, (Ca, Ce)MnO3. Magnetic force microscopy reveals the presence of magnetic bubbles, whose density vs. magnetic field peaks near the THE maximum, as is expected to occur in skyrmion systems. The THE critically depends on carrier concentration and diverges at low do**, near the metal-insulator transition. We discuss the strong amplification of the THE by correlation effects and give perspectives for its non-volatile control by electric fields. △ Less

Submitted 19 September, 2019; originally announced September 2019.

Comments: Contact author for a reprint of the final version published in Nature Physics

Journal ref: Nature Physics 15, 67 (2019)

Full field electron spectromicroscopy applied to ferroelectric materials

Authors: N. Barrett, J. E. Rault, J. L. Wang, C. Mathieu, A. Locatelli, T. O. Mentes, M. A. Nino, S. Fusil, M. Bibes, A. Barthelemy, D. Sando, W. Ren, S. Prosandeev, L. Bellaiche, B. Vilquin, A. Petraru, I. P. Krug, C. M. Schneider

Abstract: The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both P… ▽ More The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both PEEM and LEEM can be used in direct and reciprocal space imaging. Together, they provide access to surface charge, work function, topography, chemical map**, surface crystallinity and band structure. Examples of applications for the study of ferroelectric thin films and single crystals are presented. △ Less

Submitted 13 June, 2018; originally announced June 2018.

Comments: 15 pages, 9 figures

Journal ref: Journal of Applied Physics 113, 187217 (2013)

Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator

Authors: M. Marinova, J. E. Rault, A. Gloter, S. Nemsak, G. K. Palsson, J. -P. Rueff, C. S. Fadley, C. Carretero, H. Yamada, K. March, V. Garcia, S. Fusil, A. Barthelemy, O. Stephan, C. Colliex, M. Bibes

Abstract: The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly kn… ▽ More The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab-initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1-xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects. △ Less

Submitted 30 August, 2017; originally announced August 2017.

Comments: Work supported by ERC Consolidator grant MINT (Contract No. 615759)

Journal ref: Nano Lett. 15, 2533 (2015)

Large elasto-optic effect and reversible electrochromism in multiferroic BiFeO3

Authors: D. Sando, Yurong Yang, E. Bousquet, C. Carretero, V. Garcia, S. Fusil, D. Dolfi, A. Barthelemy, Ph. Ghosez, L. Bellaiche, M. Bibes

Abstract: The control of optical fields is usually achieved through the electro-optic or acousto-optic effect in single-crystal ferroelectric or polar compounds such as LiNbO3 or quartz. In recent years, tremendous progress has been made in ferroelectric oxide thin film technology - a field which is now a strong driving force in areas such as electronics, spintronics and photovoltaics. Here, we apply epitax… ▽ More The control of optical fields is usually achieved through the electro-optic or acousto-optic effect in single-crystal ferroelectric or polar compounds such as LiNbO3 or quartz. In recent years, tremendous progress has been made in ferroelectric oxide thin film technology - a field which is now a strong driving force in areas such as electronics, spintronics and photovoltaics. Here, we apply epitaxial strain engineering to tune the optical response of BiFeO3 thin films, and find a very large variation of the optical index with strain, corresponding to an effective elasto-optic coefficient larger than that of quartz. We observe a concomitant strain-driven variation in light absorption - reminiscent of piezochromism - which we show can be manipulated by an electric field. This constitutes an electrochromic effect that is reversible, remanent and not driven by defects. These findings broaden the potential of multiferroics towards photonics and thin film acousto-optic devices, and suggest exciting device opportunities arising from the coupling of ferroic, piezoelectric and optical responses. △ Less

Submitted 29 August, 2017; originally announced August 2017.

Comments: Work supported by ERC Consolidator grant MINT (Contract No. 615759)

Journal ref: Nature Commun. 7, 10718 (2016)

A high-temperature superconducting weak-link defined by ferroelectric field-effect

Authors: L. Begon-Lours, V. Rouco, A. Sander, J. Trastoy, R. Bernard, E. Jacquet, K. Bouzehouane, S. Fusil, V. Garcia, A. Barthelemy, M. Bibes, J. Santamaría, J. E. Villegas

Abstract: In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in the S. This leads either to an enhancement or a depression of its critical temperature depending on FE polarization direction.Here we exploit this effect at a… ▽ More In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in the S. This leads either to an enhancement or a depression of its critical temperature depending on FE polarization direction.Here we exploit this effect at a local scale to define planar weak-links in high-temperature superconducting wires. This is realized in BiFeO3(FE)/YBa2Cu3O7(S)bilayers in which the remnant FE domain structure is written at will by locally applying voltage pulses with a conductive-tip atomic force microscope. In this fashion, the FE domain pattern defines a spatial modulation of superconductivity. This allows us to write a device whose electrical transport shows different temperature regimes and magnetic field matching effects that are characteristic of Josephson coupled weak-links. This illustrates the potential of the ferroelectric approach for the realization of high-temperature superconducting devices. △ Less

Submitted 3 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. Applied 7, 064015 (2017)

Photovoltaic response around a unique180{\textdegree} ferroelectric domain wall in single crystalline BiFeO3

Authors: C Blouzon, J-Y Chauleau, A Mougin, S Fusil, M Viret

Abstract: Using an experimental setup designed to scan a submicron sized light spot and collect the photogenerated current through larger electrodes, we map the photovoltaic response in ferroelectric BiFeO3 single crystals. We study the effect produced by a unique 180{\textdegree} ferroelectric domain wall (DW) and show that the photocurrent maps are significantly affected by its presence and shape. The eff… ▽ More Using an experimental setup designed to scan a submicron sized light spot and collect the photogenerated current through larger electrodes, we map the photovoltaic response in ferroelectric BiFeO3 single crystals. We study the effect produced by a unique 180{\textdegree} ferroelectric domain wall (DW) and show that the photocurrent maps are significantly affected by its presence and shape. The effect is large in its vicinity and in the Schottky barriers at the interface with the Au electrodes, but no extra photocurrent is observed when the illuminating spot touches the DW, indicating that this particular entity is not the heart of specific photo-electric properties. Using 3D modelling, we argue that the measured effect is due to the spatial distribution of internal fields which are significantly affected by the charge of the DW due to its distortion. △ Less

Submitted 23 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. B 94, 094107 (2016)

High-performance ferroelectric memory based on fully patterned tunnel junctions

Authors: S. Boyn, S. Girod, V. Garcia, S. Fusil, S. Xavier, C. Deranlot, H. Yamada, C. Carrétéro, E. Jacquet, M. Bibes, A. Barthélémy, J. Grollier

Abstract: In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared… ▽ More In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared to the case of conventional ferroelectric memories (FeRAMs). Initially, endurance limitation (i.e. fatigue) was the main factor hampering the industrialization of FeRAMs. Systematic investigations of switching dynamics for various ferroelectric and electrode materials have resolved this issue, with endurance now reaching $10^{14}$ cycles. Here we investigate data retention and endurance in fully patterned submicron Co/BiFeO$_3$/Ca$_{0.96}$Ce$_{0.04}$MnO$_3$ FTJs. We report good reproducibility with high resistance contrasts and extend the maximum reported endurance of FTJs by three orders of magnitude ($4\times10^6$ cycles). Our results indicate that here fatigue is not limited by a decrease of the polarization or an increase of the leakage but rather by domain wall pinning. We propose directions to access extreme and intermediate resistance states more reliably and further strengthen the potential of FTJs for non-volatile memory applications. △ Less

Submitted 6 February, 2014; originally announced February 2014.

Journal ref: Appl. Phys. Lett. 104, 052909 (2014)

Thickness-dependent polarization of strained BiFeO3 films with constant tetragonality

Authors: J. E. Rault, W. Ren, S. Prosandeev, S. Lisenkov, D. Sando, S. Fusil, M. Bibes, A. Barthelemy, L. Bellaiche, N. Barrett

Abstract: We measure the remnant polarization of ferroelectric domains in BiFeO3 films down to 3.6 nm using low energy electron and photoelectron emission microscopy. The measured polarization decays strongly below a critical thickness of 5-7 nm predicted by continuous medium theory whereas the tetragonal distortion does not change. We resolve this apparent contradiction using first-principles-based effecti… ▽ More We measure the remnant polarization of ferroelectric domains in BiFeO3 films down to 3.6 nm using low energy electron and photoelectron emission microscopy. The measured polarization decays strongly below a critical thickness of 5-7 nm predicted by continuous medium theory whereas the tetragonal distortion does not change. We resolve this apparent contradiction using first-principles-based effective Hamiltonian calculations. In ultra thin films the energetics of near open circuit electrical boundary conditions, i.e. unscreened depolarizing field, drive the system through a phase transition from single out-of-plane polarization to a nanoscale stripe domains, giving rise to an average remnant polarization close to zero as measured by the electron microscopy whilst maintaining the relatively large tetragonal distortion imposed by the non-zero polarization state of each individual domain. △ Less

Submitted 3 January, 2013; v1 submitted 14 October, 2012; originally announced October 2012.

Comments: main article: 5 pages, 6 figures; supplementary materials: 6 pages, 6 figures. Published in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 109, 267601 (2012)

A ferroelectric memristor

Authors: André Chanthbouala, Vincent Garcia, Ryan O. Cherifi, Karim Bouzehouane, Stéphane Fusil, Xavier Moya, Stéphane Xavier, Hiroyuki Yamada, Cyrile Deranlot, Neil D. Mathur, Manuel Bibes, Agnès Barthélémy, Julie Grollier

Abstract: Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain conf… ▽ More Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures. △ Less

Submitted 15 June, 2012; originally announced June 2012.

Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device

Authors: A. Bernand-Mantel, P. Seneor, K. Bouzehouane, S. Fusil, C. Deranlot, F. Petroff, A. Fert

Abstract: We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects… ▽ More We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device. △ Less

Submitted 24 November, 2011; v1 submitted 23 November, 2011; originally announced November 2011.

Nanoscale ferroelectric manipulation of magnetic flux quanta

Authors: Arnaud Crassous, Rozenn Bernard, Stéphane Fusil, Karim Bouzehouane, D. Le Bourdais, Shaïma Enouz-Vedrenne, Javier Briatico, Manuel Bibes, Agnès Barthélémy, Javier E. Villegas

Abstract: Using heterostructures that combine a large-polarization ferroelectric (BiFeO3) and a high-temperature superconductor (YBa2Cu3O7-δ), we demonstrate the modulation of the superconducting condensate at the nanoscale via ferroelectric field effects. Through this mechanism, a nanoscale pattern of normal regions that mimics the ferroelectric domain structure can be created in the superconductor. This y… ▽ More Using heterostructures that combine a large-polarization ferroelectric (BiFeO3) and a high-temperature superconductor (YBa2Cu3O7-δ), we demonstrate the modulation of the superconducting condensate at the nanoscale via ferroelectric field effects. Through this mechanism, a nanoscale pattern of normal regions that mimics the ferroelectric domain structure can be created in the superconductor. This yields an energy landscape for magnetic flux quanta and, in turn, couples the local ferroelectric polarization to the local magnetic induction. We show that this form of magnetoelectric coupling, together with the possibility to reversibly design the ferroelectric domain structure, allows the electrostatic manipulation of magnetic flux quanta. △ Less

Submitted 8 September, 2011; originally announced September 2011.

Journal ref: Phys. Rev. Lett. 107, 247002 (2011)

Multiferroic phase transition near room temperature in BiFeO3 films

Authors: I. C. Infante, J. Juraszek, S. Fusil, B. Dupe, P. Gemeiner, O. Dieguez, F. Pailloux, S. Jouen, E. Jacquet, G. Geneste, J. Pacaud, J. Iniguez, L. Bellaiche, A. Barthelemy, B. Dkhil, M. Bibes

Abstract: In multiferroic BiFeO3 thin films grown on highly mismatched LaAlO3 substrates, we reveal the coexistence of two differently distorted polymorphs that leads to striking features in the temperature dependence of the structural and multiferroic properties. Notably, the highly distorted phase quasi-concomitantly presents an abrupt structural change, transforms from a hard to a soft ferroelectric and… ▽ More In multiferroic BiFeO3 thin films grown on highly mismatched LaAlO3 substrates, we reveal the coexistence of two differently distorted polymorphs that leads to striking features in the temperature dependence of the structural and multiferroic properties. Notably, the highly distorted phase quasi-concomitantly presents an abrupt structural change, transforms from a hard to a soft ferroelectric and transitions from antiferromagnetic to paramagnetic at 360+/-20 K. These coupled ferroic transitions just above room temperature hold promises of giant piezoelectric, magnetoelectric and piezomagnetic responses, with potential in many applications fields. △ Less

Submitted 30 May, 2011; originally announced May 2011.

Imaging ferroelectric domains in multiferroics using a low-energy electron microscope in the mirror operation mode

Authors: Salia Cherifi, Riccardo Hertel, Stéphane Fusil, Hélène Béa, Karim Bouzehouane, Julie Allibe, Manuel Bibes, Agnès Barthélémy

Abstract: We report on low-energy electron microscopy imaging of ferroelectric domains with submicron resolution. Periodic strips of 'up' and 'down'-polarized ferroelectric domains in bismuth ferrite -a room temperature multiferroic- serve as a model system to compare low-energy electron microscopy with the established piezoresponse force microscopy. The results confirm the possibility of full-field imaging… ▽ More We report on low-energy electron microscopy imaging of ferroelectric domains with submicron resolution. Periodic strips of 'up' and 'down'-polarized ferroelectric domains in bismuth ferrite -a room temperature multiferroic- serve as a model system to compare low-energy electron microscopy with the established piezoresponse force microscopy. The results confirm the possibility of full-field imaging of ferroelectric domains with short acquisition times by exploiting the sensitivity of ultraslow electrons to small variations of the electric potential near surfaces in the "mirror" operation mode. △ Less

Submitted 17 August, 2010; originally announced August 2010.

Journal ref: Phys.Status Solidi 4:22-24,2010

Unravelling the role of the interface for spin injection into organic semiconductors

Authors: Clément Barraud, Pierre Seneor, Richard Mattana, Stéphane Fusil, Karim Bouzehouane, Cyrile Deranlot, Patrizio Graziosi, Luis Hueso, Ilaria Bergenti, Valentin Dediu, Frédéric Petroff, Albert Fert

Abstract: Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetores… ▽ More Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices. △ Less

Submitted 11 May, 2010; originally announced May 2010.

Comments: Original version. Revised version to appear in Nature Physics.

Shear effects in lateral piezoresponse force microscopy at 180$^\circ$ ferroelectric domain walls

Authors: J. Guyonnet, H. Bea, F. Guy, S. Gariglio, S. Fusil, K. Bouzehouane, J. -M. Triscone, P. Paruch

Abstract: In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreem… ▽ More In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO$_3$ films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization, and has to be taken into account in order to correctly interpret the ferroelectric domain configuration. △ Less

Submitted 2 September, 2010; v1 submitted 27 July, 2009; originally announced July 2009.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 95, 132902 (2009)

Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces

Authors: O. Copie, V. Garcia, C. Bodefeld, C. Carretero, M. Bibes, G. Herranz, E. Jacquet, J. -L. Maurice, B. Vinter, S. Fusil, K. Bouzehouane, H. Jaffres, A. Barthelemy

Abstract: Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into a… ▽ More Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into account both the large temperature and electric-field dependence of the permittivity of SrTiO3 predict a confinement over a few nm for sheet carrier densities larger than ~6 10^13 cm-2. We discuss the experimental and simulations results in terms of a multi-band carrier system. Remarkably, the Fermi wavelength estimated from Hall measurements is ~16 nm, indicating that the electron gas in on the verge of two-dimensionality. △ Less

Submitted 13 May, 2009; originally announced May 2009.

Comments: Accepted for publication in Physical Review Letters

Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions

Authors: Jean-Luc Maurice, Gervasi Herranz, Christian Colliex, Isabelle Devos, Cécile Carrétéro, Agnès Barthelemy, Karim Bouzehouane, Stéphane Fusil, Dominique Imhoff, Éric Jacquet, François Jomard, Dominique Ballutaud, Mario Basletic

Abstract: At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended do**. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope,… ▽ More At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended do**. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions. △ Less

Submitted 3 December, 2007; originally announced December 2007.

Comments: 6 pages

Journal ref: Europhysics Letters (EPL) 82 (2008) 17003

Mechanisms of exchange bias with multiferroic BiFeO3 epitaxial thin films

Authors: H. Bea, M. Bibes, F. Ott, B. Dupe, X. -H. Zhu, S. Petit, S. Fusil, C. Deranlot, K. Bouzehouane, A. Barthelemy

Abstract: We have combined neutron scattering and piezoresponse force microscopy to study the relation between the exchange bias observed in CoFeB/BiFeO3 heterostructures and the multiferroic domain structure of the BiFeO3 films. We show that the exchange field scales with the inverse of the ferroelectric and antiferromagnetic domain size, as expected from Malozemoff's model of exchange bias extended to m… ▽ More We have combined neutron scattering and piezoresponse force microscopy to study the relation between the exchange bias observed in CoFeB/BiFeO3 heterostructures and the multiferroic domain structure of the BiFeO3 films. We show that the exchange field scales with the inverse of the ferroelectric and antiferromagnetic domain size, as expected from Malozemoff's model of exchange bias extended to multiferroics. Accordingly, polarized neutron reflectometry reveals the presence of uncompensated spins in the BiFeO3 film at the interface with the CoFeB. In view of these results we discuss possible strategies to switch the magnetization of a ferromagnet by an electric field using BiFeO3. △ Less

Submitted 10 October, 2007; originally announced October 2007.

Comments: submitted to Phys. Rev. Lett

Map** the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures

Authors: M. Basletic, J. -L. Maurice, C. Carretero, G. Herranz, O. Copie, M. Bibes, E. Jacquet, K. Bouzehouane, S. Fusil, A. Barthelemy

Abstract: At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of… ▽ More At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of the carrier density profile of this system through resistance profile map**s collected in cross-section LaAlO3/SrTiO3 samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending upon specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of microns into SrTiO3 to a few nanometers next to the LaAlO3/SrTiO3 interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system. △ Less

Submitted 31 March, 2008; v1 submitted 6 October, 2007; originally announced October 2007.

Comments: This updated version contains new experimental data

Fractal dimension and size scaling of domains in thin films of multiferroic BiFeO3

Authors: G. Catalan, H. Bea, S. Fusil, M. Bibes, P. Paruch, A. Barthelemy, J. F. Scott

Abstract: We have analyzed the morphology of ferroelectric domains in very thin films of multiferroic BiFeO3. Unlike the more common stripe domains observed in thicker films BiFeO3 or in other ferroics, the domains tend not to be straight, but irregular in shape, with significant domain wall roughening leading to a fractal dimensionality. Also contrary to what is usually observed in other ferroics, the do… ▽ More We have analyzed the morphology of ferroelectric domains in very thin films of multiferroic BiFeO3. Unlike the more common stripe domains observed in thicker films BiFeO3 or in other ferroics, the domains tend not to be straight, but irregular in shape, with significant domain wall roughening leading to a fractal dimensionality. Also contrary to what is usually observed in other ferroics, the domain size appears not to scale as the square root of the film thickness. A model is proposed in which the observed domain size as a function of film thickness can be directly linked to the fractal dimension of the domains. △ Less

Submitted 30 July, 2007; originally announced July 2007.

Comments: 4 pages, 3 figures

Magnetic patterning of (Ga,Mn)As by hydrogen passivation

Authors: Laura Thevenard, Audrey Miard, Laurent Vila, Giancarlo Faini, Aristide Lemaître, Nicolas Vernier, Jacques Ferré, Stéphane Fusil

Abstract: We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passiva… ▽ More We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passivation on perpendicularly magnetized layers, the switching fields can be maintained closer to the continuous film coercivity, compared to dots made by usual dry etch techniques. △ Less

Submitted 14 June, 2007; originally announced June 2007.

Room temperature coexistence of large electric polarization and magnetic order in BiFeO3 single crystals

Authors: Delphine Lebeugle, Dorothee Colson, Anne Forget, Michel Viret, Pierre Bonville, Jean-Francis Marucco, Stephane Fusil

Abstract: From an experimental point of view, room temperature ferroelectricity in BiFeO3 is raising many questions. Electric measurements made a long time ago on solid-solutions of BiFeO3 with Pb(Ti,Zr)O3 indicate that a spontaneous electric polarization exists in BiFeO3 below the Curie temperature TC=1143K. Yet in most reported works, the synthesised samples are too conductive at room temperature to get… ▽ More From an experimental point of view, room temperature ferroelectricity in BiFeO3 is raising many questions. Electric measurements made a long time ago on solid-solutions of BiFeO3 with Pb(Ti,Zr)O3 indicate that a spontaneous electric polarization exists in BiFeO3 below the Curie temperature TC=1143K. Yet in most reported works, the synthesised samples are too conductive at room temperature to get a clear polarization loop in the bulk without any effects of extrinsic physical or chemical parameters. Surprisingly, up to now there has been no report of a P(E) (polarization versus electric field) loop at room temperature on single crystals of BiFeO3. We describe here our procedure to synthesize ceramics and to grow good quality sizeable single crystals by a flux method. We demonstrate that BiFeO3 is indeed ferroelectric at room-temperature through evidence by Piezoresponse Force Microscopy and P(E) loops. The polarization is found to be large, around 60 microC/cm2, a value that has only been reached in thin films. Magnetic measurements using a SQUID magnetometer and Mossbauer spectroscopy are also presented. The latter confirms the results of NMR measurements concerning the anisotropy of the hyperfine field attributed to the magnetic cycloidal structure. △ Less

Submitted 4 June, 2007; originally announced June 2007.

Comments: 27 pages, 12 figures

Report number: SPEC-S07/039

Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

Authors: H. Bea, M. Bibes, S. Cherifi, F. Nolting, B. Warot-Fonrose, S. Fusil, G. Herranz, C. Deranlot, E. Jacquet, K. Bouzehouane, A. Barthelemy

Abstract: We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferro… ▽ More We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (~60 Oe) exchange bias on a ferromagnetic film of CoFeB, at room temperature. Remarkably, the exchange bias effect is robust upon magnetic field cycling, with no indications of training. △ Less

Submitted 27 September, 2006; v1 submitted 21 July, 2006; originally announced July 2006.

Comments: 15 pages, 4 figures

Multiferroic tunnel junctions

Authors: Martin Gajek, Manuel Bibes, Stephane Fusil, Karim Bouzehouane, Josep Fontcuberta, Agnes Barthelemy, Albert Fert

Abstract: Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in electric polarization and magnetization to obtain four different logic states. However, schemes allowing a simple electrical readout of these different state… ▽ More Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in electric polarization and magnetization to obtain four different logic states. However, schemes allowing a simple electrical readout of these different states have not been demonstrated so far. In this article, we show that this can be achieved if a multiferroic material is used as the tunnel barrier in a magnetic tunnel junction. We demonstrate that thin films of ferromagnetic-ferroelectric La0.1Bi0.9MnO3 (LBMO) retain both ferroic properties down to a thickness of only 2 nm. We have used such films as spin-filtering tunnel barriers the magnetization and electric polarization of which can be switched independently. In that case, the tunnel current across the structure is controlled by both the magnetic and ferroelectric configuration of the barrier, which gives rise to four distinct resistance states. This can be explained by the combination of spin filtering by the ferromagnetic LBMO barrier and the partial charge screening of electrical charges at the barrier/electrode interfaces due to ferroelectricity. We anticipate our results to be a starting point for more studies on the interplay between ferroelectricity and spin-dependent tunneling, and for the use of nanometric multiferroic elements in prototype devices. On a wider perspective, they may open the way towards novel reconfigurable logic spintronics architectures and to electrically controlled readout in quantum computing schemes using the spin-filter effect. △ Less

Submitted 16 June, 2006; originally announced June 2006.

Spin injection in a single metallic nanoparticle: a step towards nanospintronics

Authors: A. Bernand-Mantel, P. Seneor, N. Lidgi, M. Munoz, V. Cros, S. Fusil, K. Bouzehouane, C. Deranlot, A. Vaures, F. Petroff, A. Fert

Abstract: We have fabricated nanometer sized magnetic tunnel junctions using a new nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Coulomb blockade effects show clear evidence for single electron tunneling through a single 2.5 nm Au cluster. The observed magnetoresistance is the signature of spin conservation during the transport process through a no… ▽ More We have fabricated nanometer sized magnetic tunnel junctions using a new nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Coulomb blockade effects show clear evidence for single electron tunneling through a single 2.5 nm Au cluster. The observed magnetoresistance is the signature of spin conservation during the transport process through a non magnetic cluster. △ Less

Submitted 19 January, 2006; originally announced January 2006.

Comments: 3 pages

Combining half-metals and multiferroics into epitaxial heterostructures for spintronics

Authors: H. Bea, M. Bibes, M. Sirena, G. Herranz, K. Bouzehouane, E. Jacquet, S. Fusil, P. Paruch, M. Dawber, J. -P. Contour, A. Barthelemy

Abstract: We report on the growth of epitaxial bilayers of the La2/3Sr1/3MnO3 (LSMO) half-metallic ferromagnet and the BiFeO3 (BFO) multiferroic, on SrTiO3(001) by pulsed laser deposition. The growth mode of both layers is two-dimensional, which results in unit-cell smooth surfaces. We show that both materials keep their properties inside the heterostructures, i.e. the LSMO layer (11 nm thick) is ferromag… ▽ More We report on the growth of epitaxial bilayers of the La2/3Sr1/3MnO3 (LSMO) half-metallic ferromagnet and the BiFeO3 (BFO) multiferroic, on SrTiO3(001) by pulsed laser deposition. The growth mode of both layers is two-dimensional, which results in unit-cell smooth surfaces. We show that both materials keep their properties inside the heterostructures, i.e. the LSMO layer (11 nm thick) is ferromagnetic with a Curie temperature of ~330K, while the BFO films shows ferroelectricity down to very low thicknesses (5 nm). Conductive-tip atomic force microscope map**s of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal. △ Less

Submitted 24 October, 2005; originally announced October 2005.

Spinel ferrites: old materials bring new opportunities for spintronics

Authors: Ulrike Lueders, Agnes Barthelemy, Manuel Bibes, Karim Bouzehouane, Stephane Fusil, Eric Jacquet, Jean-Pierre Contour, Jean-Francois Bobo, Josep Fontcuberta, Albert Fert

Abstract: Over the past few years, intensive studies of ultrathin epitaxial films of perovskite oxides have often revealed exciting properties like giant magnetoresistive tunnelling and electric field effects. Spinel oxides appear as even more versatile due to their more complex structure and the resulting many degrees of freedom. Here we show that the epitaxial growth of nanometric NiFe2O4 films onto per… ▽ More Over the past few years, intensive studies of ultrathin epitaxial films of perovskite oxides have often revealed exciting properties like giant magnetoresistive tunnelling and electric field effects. Spinel oxides appear as even more versatile due to their more complex structure and the resulting many degrees of freedom. Here we show that the epitaxial growth of nanometric NiFe2O4 films onto perovskite substrates allows the stabilization of novel ferrite phases with properties dramatically differing from bulk ones. Indeed, NiFe2O4 films few nanometres thick have a saturation magnetization at least twice that of the bulk compound and their resistivity can be tuned by orders of magnitude, depending on the growth conditions. By integrating such thin NiFe2O4 layers into spin-dependent tunnelling heterostructures, we demonstrate that this versatile material can be useful for spintronics, either as a conductive electrode in magnetic tunnel junctions or as a spin-filtering insulating barrier in the little explored type of tunnel junction called spin-filter. Our findings are thus opening the way for the realisation of monolithic spintronics architectures integrating several layers of a single material, where the layers are functionalised in a controlled manner. △ Less

Submitted 31 August, 2005; originally announced August 2005.

Spin filtering through ferromagnetic BiMnO3 tunnel barriers

Authors: M. Gajek, M. Bibes, A. Barthelemy, K. Bouzehouane, S. Fusil, M. Varela, J. Fontcuberta, A. Fert

Abstract: We report on experiments of spin filtering through ultra-thin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counter-electrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3 K we find a 50% change of the tunnel resistances according to whether the magnetiza… ▽ More We report on experiments of spin filtering through ultra-thin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counter-electrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3 K we find a 50% change of the tunnel resistances according to whether the magnetizations of BMO and LSMO are parallel or opposite. This effect corresponds to a spin filtering effciency of up to 22%. Our results thus show the potential of complex ferromagnetic insulating oxides for spin filtering and injection. △ Less

Submitted 26 April, 2005; originally announced April 2005.

Influence of parasitic phases on the properties of BiFeO3 epitaxial thin films

Authors: H. Bea, M. Bibes, A. Barthelemy, K. Bouzehouane, E. Jacquet, A. Khodan, J. -P. Contour, S. Fusil, F. Wyczisk, A. Forget, D. Lebeugle, D. Colson, M. Viret

Abstract: We have explored the influence of deposition pressure and temperature on the growth of BiFeO3 thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BiFeO3 films are obtained in a region close to 10-2 mbar and 580C. In non-optimal conditions, X-ray diffraction reveals the presence of Fe oxides or of Bi2O3. We address the influence of these parasitic phases on t… ▽ More We have explored the influence of deposition pressure and temperature on the growth of BiFeO3 thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BiFeO3 films are obtained in a region close to 10-2 mbar and 580C. In non-optimal conditions, X-ray diffraction reveals the presence of Fe oxides or of Bi2O3. We address the influence of these parasitic phases on the magnetic and electrical properties of the films and show that films with Fe2O3 systematically exhibit a ferromagnetic behaviour, while single-phase films have a low bulk-like magnetic moment. Conductive-tip atomic force microscopy map**s also indicate that Bi2O3 conductive outgrowths create shortcuts through the BiFeO3 films, thus preventing their practical use as ferroelectric elements in functional heterostructures. △ Less

Submitted 25 April, 2005; originally announced April 2005.

Comments: sumbitted to Appl. Phys. Lett

Nanolithography based on real-time electrically-controlled indentation with an atomic force microscope for nanocontacts elaboration

Authors: K. Bouzehouane, S. Fusil, M. Bibes, J. Carrey, T. Blon, P. Seneor, V. Cros, L. Vila

Abstract: We report on the fabrication of nanocontacts by indentation of an ultrathin insulating photoresist layer deposited on various types of conductive structures. A modified atomic force microscope (AFM) designed for local resistance measurements is used as a nanoindenter. The nanoindentation is performed while measuring continuously the resistance between the conductive tip of the AFM and the conduc… ▽ More We report on the fabrication of nanocontacts by indentation of an ultrathin insulating photoresist layer deposited on various types of conductive structures. A modified atomic force microscope (AFM) designed for local resistance measurements is used as a nanoindenter. The nanoindentation is performed while measuring continuously the resistance between the conductive tip of the AFM and the conductive layer, which is used as the trigger parameter to stop the indentation. This allows an extremely accurate control of the indentation process. The indented hole is subsequently filled by a metal to create a contact on the underlying layer. We show that nanocontacts in the range of 1 to 10 nm2 can be created with this technique. △ Less

Submitted 3 June, 2003; originally announced June 2003.