Showing 1–15 of 15 results for author: Furthmüller, J

First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes

Authors: Martin Keller, Abderrezak Belabbes, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti

Abstract: Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium are thoroughly analyzed under equilibrium conditions. For this purpose, we apply state-of-the-art density functional theory. The phase diagram, obtained in the… ▽ More Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium are thoroughly analyzed under equilibrium conditions. For this purpose, we apply state-of-the-art density functional theory. The phase diagram, obtained in the framework of a generalized Ising model, shows that the diamond structure is the most stable under ambient conditions, but hexagonal modifications are close to the phase boundary, especially for Si. Our band-structure calculations using the MBJLDA and HSE06 exchange correlation functionals predict significant changes in electronic states with hexagonality. While Si crystals are always semiconductors with indirect band gaps, the hexagonal Ge polytypes have direct band gaps. The branch point energies for Ge crystals are below the valence band maxima, and therefore the formation of hole gases on Ge surfaces is favoured. Band alignment based on the branch point energy leads to type-I heterocrystalline interfaces between Ge polytypes, where electrons and holes can be trapped in the layer with the higher hexagonality. In contrast, the energy shift of the indirect conduction band minima of Si polytypes is rather weak, leading to delocalization of excited electrons at interfaces, while only holes can localize in the layer with higher hexagonality. △ Less

Submitted 21 February, 2023; originally announced February 2023.

Comments: 37 pages, 7 figures, submitted to Physical Review Materials

From pseudo-direct hexagonal germanium to direct silicon-germanium alloys

Authors: Pedro Borlido, Jens Renè Suckert, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti, Claudia Rödl

Abstract: We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using density-functional theory. Hexagonal Si has an indirect band gap, while hexagonal Ge has a pseudo-direct gap, i.e. the optical transitions at the minimum direct ba… ▽ More We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using density-functional theory. Hexagonal Si has an indirect band gap, while hexagonal Ge has a pseudo-direct gap, i.e. the optical transitions at the minimum direct band gap are very weak. The pseudo-direct character of pure hexagonal Ge is efficiently lifted by alloying. Already for a small admixture of Si, symmetry reduction enhances the oscillator strength of the lowest direct optical transitions. The band gap is direct for a Si content below 45 %. We validate lonsdaleite group-IV alloys to be efficient optical emitters, suitable for integrated optoelectronic applications. △ Less

Submitted 5 May, 2021; originally announced May 2021.

Efficient strain-induced light emission in lonsdaleite germanium

Authors: Jens René Suckert, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti

Abstract: Lonsdaleite germanium has a direct band gap, but it is not an efficient light emitter due to the vanishing oscillator strength of electronic transitions at the fundamental gap. Transitions involving the second lowest conduction band are instead at least three orders of magnitude stronger. The inversion of the two lowest conduction bands would therefore make hexagonal germanium ideal for optoelectr… ▽ More Lonsdaleite germanium has a direct band gap, but it is not an efficient light emitter due to the vanishing oscillator strength of electronic transitions at the fundamental gap. Transitions involving the second lowest conduction band are instead at least three orders of magnitude stronger. The inversion of the two lowest conduction bands would therefore make hexagonal germanium ideal for optoelectronic applications. In this work, we investigate the possibility to achieve this band inversion by applying strain. To this end we perform ab initio calculations of the electronic band structure and optical properties of strained hexagonal germanium, using density functional theory with the modified Becke-Johnson exchange-correlation functional and including spin-orbit interaction. We consider hydrostatic pressure, uniaxial strain along the hexagonal c axis, as well as biaxial strain in planes perpendicular to and containing the hexagonal c axis to simulate the effect of a substrate. We find that the conduction-band inversion, and therefore the transition from a pseudo-direct to a direct band gap, is attainable for moderate tensile uniaxial strain parallel to the lonsdaleite c axis. △ Less

Submitted 16 March, 2021; v1 submitted 14 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Materials 5, 024602 (2021)

Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$

Authors: Jack E. N. Swallow, Christian Vorwerk, Piero Mazzolini, Patrick Vogt, Oliver Bierwagen, Alexander Karg, Martin Eickhoff, Jörg Schörmann, Markus R. Wagner, Joseph W. Roberts, Paul R. Chalker, Matthew J. Smiles, Philip A. E. Murgatroyd, Sara A. Razek, Zachary W. Lebens-Higgins, Louis F. J. Piper, Leanne A. H. Jones, Pardeep Kumar Thakur, Tien-Lin Lee, Joel B. Varley, Jürgen Furthmüller, Claudia Draxl, Tim D. Veal, Anna Regoutz

Abstract: The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main $β$-phase. Here, three polymorphs of Ga$_2$O$_3$, $α$, $β$ and $\varepsilon$, are investigated using X-ray diffraction, X-ra… ▽ More The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main $β$-phase. Here, three polymorphs of Ga$_2$O$_3$, $α$, $β$ and $\varepsilon$, are investigated using X-ray diffraction, X-ray photoelectron and absorption spectroscopy, and ab initio theoretical approaches to gain insights into their structure - electronic structure relationships. Valence and conduction electronic structure as well as semi-core and core states are probed, providing a complete picture of the influence of local coordination environments on the electronic structure. State-of-the-art electronic structure theory, including all-electron density functional theory and many-body perturbation theory, provide detailed understanding of the spectroscopic results. The calculated spectra provide very accurate descriptions of all experimental spectra and additionally illuminate the origin of observed spectral features. This work provides a strong basis for the exploration of the Ga$_2$O$_3$ polymorphs as materials at the heart of future electronic device generations. △ Less

Submitted 22 September, 2020; v1 submitted 27 May, 2020; originally announced May 2020.

Comments: Updated manuscript version after peer review

Journal ref: Chemistry of Materials 32, 8460 2020

Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys

Authors: E. M. T. Fadaly, A. Dijkstra, J. R. Suckert, D. Ziss, M. A. J. v. Tilburg, C. Mao, Y. Ren, V. T. v. Lange, S. Kölling, M. A. Verheijen, D. Busse, C. Rödl, J. Furthmüller, F. Bechstedt, J. Stangl, J. J. Finley, S. Botti, J. E. M. Haverkort, E. P. A. M. Bakkers

Abstract: Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades… ▽ More Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies. △ Less

Submitted 2 November, 2019; originally announced November 2019.

Comments: 25 pages,5 main figures, 7 supplementary figures

Quantization of spin Hall conductivity in two-dimensional topological insulators versus symmetry and spin-orbit interaction

Authors: Filipe Matusalem, Lars Matthes, Jürgen Furthmüller, Marcelo Marques, Lara K. Teles, Friedhelm Bechstedt

Abstract: The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric systems independent of the gap size. 2D crystals with hexagonal and square Bravais lattice show similar effects, while true rectangular translational symmetry yields… ▽ More The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric systems independent of the gap size. 2D crystals with hexagonal and square Bravais lattice show similar effects, while true rectangular translational symmetry yields conductivity values much below the quantum $e^2/h$. Field-induced lifting the inversion symmetry does not influence the quantum spin Hall state up to band inversion but the conductivity quantization. Weak symmetry-conserving biaxial but also uniaxial strain has a minor influence as long as inverted gaps dictate the topological character. The results are discussed in terms of the atomic geometry and the Rashba contribution to the spin-orbit interaction (SOI). Translational and point-group symmetry as well as SOI rule the deviation from the quantization of the spin Hall conductance. △ Less

Submitted 27 September, 2019; v1 submitted 24 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 100, 245430 (2019)

Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications

Authors: Claudia Rödl, Jürgen Furthmüller, Jens Renè Suckert, Valerio Armuzza, Friedhelm Bechstedt, Silvana Botti

Abstract: High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire substrates. These hexagonal phases of group-IV semiconductors have been predicted to exhibit improved electronic and optical properties for optoelectronic applications. While lonsdaleite Si is a well-characterized indirect semiconductor, experimental data and reliable calculations on lonsdaleite Ge are scarce and… ▽ More High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire substrates. These hexagonal phases of group-IV semiconductors have been predicted to exhibit improved electronic and optical properties for optoelectronic applications. While lonsdaleite Si is a well-characterized indirect semiconductor, experimental data and reliable calculations on lonsdaleite Ge are scarce and not consistent regarding the nature of its gap. Using ab initio density-functional theory, we calculate accurate structural, electronic, and optical properties for hexagonal Ge. Given the well-known sensitivity of electronic-structure calculations for Ge to the underlying approximations, we systematically test the performance of several exchange-correlation functionals, including meta-GGA and hybrid functionals. We first validate our approach for cubic Ge, obtaining atomic geometries and band structures in excellent agreement with available experimental data. Then, the same approach is applied to predict electronic and optical properties of lonsdaleite Ge. We portray lonsdaleite Ge as a direct semiconductor with only weakly dipole-active lowest optical transitions, small band gap, huge crystal-field splitting, and strongly anisotropic effective masses. The unexpectedly small direct gap and the oscillator strengths of the lowest optical transitions are explained in terms of symmetry and back-folding of energy bands of the diamond structure. △ Less

Submitted 5 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. Materials 3, 034602 (2019)

Dipole Analysis of the Dielectric Function of Colour Dispersive Materials: Application to Monoclinic Ga$_2$O$_3$

Authors: Chris Sturm, Rüdiger Schmidt-Grund, Christian Kranert, Jürgen Furthmüller, Friedhelm Bechstedt, Marius Grundmann

Abstract: We apply a generalized model for the determination and analysis of the dielectric function of optically anisotropic materials with colour dispersion to phonon modes and show that it can also be generalized to excitonic polarizabilities and electronic band-band transitions. We take into account that the tensor components of the dielectric function within the cartesian coordinate system are not inde… ▽ More We apply a generalized model for the determination and analysis of the dielectric function of optically anisotropic materials with colour dispersion to phonon modes and show that it can also be generalized to excitonic polarizabilities and electronic band-band transitions. We take into account that the tensor components of the dielectric function within the cartesian coordinate system are not independent from each other but are rather projections of the polarization of dipoles oscillating along directions defined by the, non-cartesian, crystal symmetry and polarizability. The dielectric function is then composed of a series of oscillators pointing in different directions. The application of this model is exemplarily demonstrated for monoclinic ($β$-phase) Ga$_2$O$_3$ bulk single crystals. Using this model, we are able to relate electronic transitions observed in the dielectric function to atomic bond directions and orbitals in the real space crystal structure. For thin films revealing rotational domains we show that the optical biaxiality is reduced to uniaxial optical response. △ Less

Submitted 28 January, 2016; originally announced January 2016.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 94, 035148 (2016)

Dielectric tensor of monoclinic Ga$_2$O$_3$ single crystals in the spectral range $0.5 - 8.5\,$eV

Authors: Chris Sturm, Jürgen Furthmüller, Friedhelm Bechstedt, Rüdiger Schmidt-Grund, Marius Grundmann

Abstract: The dielectric tensor of $β$-Ga$_2$O$_3$ was determined by generalized spectroscopic ellipsometry in a wide spectral range from $0.5\,\mathrm{eV}$ to $8.5\,\mathrm{eV}$ as well as by calculation including quasiparticle bands and excitonic effects. The dielectric tensors obtained by both methods are in excellent agreement with each other and the observed transitions in the dielectric function are a… ▽ More The dielectric tensor of $β$-Ga$_2$O$_3$ was determined by generalized spectroscopic ellipsometry in a wide spectral range from $0.5\,\mathrm{eV}$ to $8.5\,\mathrm{eV}$ as well as by calculation including quasiparticle bands and excitonic effects. The dielectric tensors obtained by both methods are in excellent agreement with each other and the observed transitions in the dielectric function are assigned to the corresponding valence bands. It is shown that the off-diagonal element of the dielectric tensor reaches values up to $|\varepsilon_{xz} | \approx 0.30 $ and cannot be neglected. Even in the transparent spectral range where it is quite small ($|\varepsilon_{xz} | < 0.02 $) it causes a rotation of the dielectric axes around the symmetry axis of up to $20^\circ$. △ Less

Submitted 20 July, 2015; originally announced July 2015.

Journal ref: APL Mater. 3, 106106 (2015)

Electronic and optical properties of Cadmium fluoride: the role of many-body effects

Authors: Giancarlo Cappellini, Jürgen Furthmüller, Emiliano Cadelano, Friedhelm Bechstedt

Abstract: Electronic excitations and optical spectra of $CdF_{2}$ are calculated up to ultraviolet employing state-of-the-art techniques based on density functional theory and many-body perturbation theory. The GW scheme proposed by Hedin has been used for the electronic self-energy to calculate single-particle excitation properties as energy bands and densities of states. For optical properties many-body e… ▽ More Electronic excitations and optical spectra of $CdF_{2}$ are calculated up to ultraviolet employing state-of-the-art techniques based on density functional theory and many-body perturbation theory. The GW scheme proposed by Hedin has been used for the electronic self-energy to calculate single-particle excitation properties as energy bands and densities of states. For optical properties many-body effects, treated within the Bethe-Salpeter equation framework, turn out to be crucial. A bound exciton located about 1 eV below the quasiparticle gap is predicted. Within the present scheme the optical absorption spectra and other optical functions show an excellent agreement with experimental data. Moreover, we tested different schemes to obtain the best agreement with experimental data. Among the several schemes, we suggest a self-consistent quasiparticle energy scheme. △ Less

Submitted 11 February, 2013; originally announced February 2013.

Comments: Accepted on PRB

Electronic bands of III-V semiconductor polytypes and their alignment

Authors: Abderrezak Belabbes, Christian Panse, Jürgen Furthmüller, Friedhelm Bechstedt

Abstract: The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme, the LDA-1/2 method. The results are used to derive band offsets $ΔE_c$ and $ΔE_v$ for the conduction and valence bands between two polytypes. The alignment of t… ▽ More The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme, the LDA-1/2 method. The results are used to derive band offsets $ΔE_c$ and $ΔE_v$ for the conduction and valence bands between two polytypes. The alignment of the band structures is based on the branch-point energy $E_{\rm BP}$ for each polytype. The aligned electronic structures are used to explain properties of heterocrystalline but homomaterial junctions. The gaps and offsets allow to discuss spectroscopic results obtained recently for such junctions in III-V nanowires. △ Less

Submitted 11 June, 2012; originally announced June 2012.

Ab-initio description of heterostructural alloys: Thermodynamic and structural properties of Mg_x Zn_{1-x} O and Cd_x Zn_{1-x} O

Authors: A. Schleife, M. Eisenacher, C. Rödl, F. Fuchs, J. Furthmüller, F. Bechstedt

Abstract: Pseudobinary heterostructural alloys of ZnO with MgO or CdO are studied by composing the system locally of clusters with varying ratio of cations. We investigate fourfold (wurtzite structure) and sixfold (rocksalt structure) coordination of the atoms. By means of density functional theory we study a total number of 256 16-atom clusters divided into 22 classes for the wurtzite structure and 16 clas… ▽ More Pseudobinary heterostructural alloys of ZnO with MgO or CdO are studied by composing the system locally of clusters with varying ratio of cations. We investigate fourfold (wurtzite structure) and sixfold (rocksalt structure) coordination of the atoms. By means of density functional theory we study a total number of 256 16-atom clusters divided into 22 classes for the wurtzite structure and 16 classes for the rocksalt structure for each of the alloy systems. The fraction with which each cluster contributes to the alloy is determined for a given temperature T and composition x within (i) the generalized quasi-chemical approximation, (ii) the model of a strict-regular solution, and (iii) the model of microscopic decomposition. From the cluster fractions we derive conclusions about the miscibility and the critical compositions at which the average crystal structure changes. Thermodynamic properties such as the mixing free energy and the mixing entropy are investigated for the three different statistics. We discuss the consequences of the two different local lattice structures for characteristic atomic distances, cohesive energies, and the alloys' elasticities. The differences in the properties of Mg_x Zn_{1-x} O and Cd_x Zn_{1-x} O are explained and discussed. △ Less

Submitted 17 June, 2010; v1 submitted 18 March, 2010; originally announced March 2010.

Comments: 15 pages, 13 figures

Journal ref: Phys. Rev. B 81, 245210 (2010)

GW band structure of InAs and GaAs in the wurtzite phase

Authors: Z. Zanolli, F. Fuchs, J. Furthmueller, U. von Barth, F. Bechstedt

Abstract: We report the first quasiparticle calculations of the newly observed wurtzite polymorph of InAs and GaAs. The calculations are performed in the GW approximation using plane waves and pseudopotentials. For comparison we also report the study of the zinc-blende phase within the same approximations. In the InAs compound the In 4d electrons play a very important role: whether they are frozen in the… ▽ More We report the first quasiparticle calculations of the newly observed wurtzite polymorph of InAs and GaAs. The calculations are performed in the GW approximation using plane waves and pseudopotentials. For comparison we also report the study of the zinc-blende phase within the same approximations. In the InAs compound the In 4d electrons play a very important role: whether they are frozen in the core or not, leads either to a correct or a wrong band ordering (negative gap) within the Local Density Appproximation (LDA). We have calculated the GW band structure in both cases. In the first approach, we have estimated the correction to the pd repulsion calculated within the LDA and included this effect in the calculation of the GW corrections to the LDA spectrum. In the second case, we circumvent the negative gap problem by first using the screened exchange approximation and then calculating the GW corrections starting from the so obtained eigenvalues and eigenfunctions. This approach leads to a more realistic band-structure and was also used for GaAs. For both InAs and GaAs in the wurtzite phase we predict an increase of the quasiparticle gap with respect to the zinc-blende polytype. △ Less

Submitted 28 December, 2006; v1 submitted 24 September, 2006; originally announced September 2006.

Comments: 9 pages, 6 figures, 3 tables

First-principles studies of ground- and excited-state properties of MgO, ZnO, and CdO polymorphs

Authors: A. Schleife, F. Fuchs, J. Furthmüller, F. Bechstedt

Abstract: An ab initio pseudopotential method based on density functional theory, generalized gradient corrections to exchange and correlation, and projector-augmented waves is used to investigate structural, energetical, electronic and optical properties of MgO, ZnO, and CdO in rocksalt, cesium chloride, zinc blende, and wurtzite structure. In the case of MgO we also examine the nickel arsenide structure… ▽ More An ab initio pseudopotential method based on density functional theory, generalized gradient corrections to exchange and correlation, and projector-augmented waves is used to investigate structural, energetical, electronic and optical properties of MgO, ZnO, and CdO in rocksalt, cesium chloride, zinc blende, and wurtzite structure. In the case of MgO we also examine the nickel arsenide structure and a graphitic phase. The stability of the ground-state phases rocksalt (MgO, CdO) and wurtzite (ZnO) against hydrostatic pressure and biaxial strain is studied. We also present the band structures of all polymorphs as well as the accompanying dielectric functions. We discuss the physical reasons for the anomalous chemical trend of the ground-state geometry and the fundamental gap with the size of the group-II cation in the oxide. The role of the shallow Zn3d and Cd4d electrons is critically examined. △ Less

Submitted 6 July, 2006; v1 submitted 20 April, 2006; originally announced April 2006.

Comments: 13 pages, 9 figures

Journal ref: Phys. Rev. B 73, 245212 (2006)

Quasiparticle band structure based on a generalized Kohn-Sham scheme

Authors: F. Fuchs, J. Furthmüller, F. Bechstedt, M. Shishkin, G. Kresse

Abstract: We present a comparative full-potential study of generalized Kohn-Sham schemes (gKS) with explicit focus on their suitability as starting point for the solution of the quasiparticle equation. We compare $G_0W_0$ quasiparticle band structures calculated upon LDA, sX, HSE03, PBE0, and HF functionals for exchange and correlation (XC) for Si, InN and ZnO. Furthermore, the HSE03 functional is studied… ▽ More We present a comparative full-potential study of generalized Kohn-Sham schemes (gKS) with explicit focus on their suitability as starting point for the solution of the quasiparticle equation. We compare $G_0W_0$ quasiparticle band structures calculated upon LDA, sX, HSE03, PBE0, and HF functionals for exchange and correlation (XC) for Si, InN and ZnO. Furthermore, the HSE03 functional is studied and compared to the GGA for 15 non-metallic materials for its use as a starting point in the calculation of quasiparticle excitation energies. For this case, also the effects of selfconsistency in the $GW$ self-energy are analysed. It is shown that the use of a gKS scheme as a starting point for a perturbative QP correction can improve upon the deficiencies found for LDA or GGA staring points for compounds with shallow $d$ bands. For these solids, the order of the valence and conduction bands is often inverted using local or semi-local approximations for XC, which makes perturbative $G_0W_0$ calculations unreliable. The use of a gKS starting point allows for the calculation of fairly accurate band gaps even in these difficult cases, and generally single-shot $G_0W_0$ calculations following calculations using the HSE03 functional are very close to experiment. △ Less

Submitted 6 May, 2008; v1 submitted 19 April, 2006; originally announced April 2006.

Journal ref: Phys. Rev. B 76, 115109 (2007)