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Spectral asymmetry of phonon sideband luminescence in monolayer and bilayer WSe2
Authors:
Victor Funk,
Koloman Wagner,
Edith Wietek,
Jonas D. Ziegler,
Jonathan Förste,
Jessica Lindlau,
Michael Förg,
Kenji Watanabe,
Takashi Taniguchi,
Alexey Chernikov,
Alexander Högele
Abstract:
We report an experimental study of temperature-dependent spectral lineshapes of phonon side-band emission stemming from dark excitons in monolayer and bilayer WSe$_{2}$. Using photoluminescence spectroscopy in the range from 4 to 100K, we observe a pronounced asymmetry in the phonon-assisted luminescence from momentum-indirect exciton reservoirs. We demonstrate that the corresponding spectral prof…
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We report an experimental study of temperature-dependent spectral lineshapes of phonon side-band emission stemming from dark excitons in monolayer and bilayer WSe$_{2}$. Using photoluminescence spectroscopy in the range from 4 to 100K, we observe a pronounced asymmetry in the phonon-assisted luminescence from momentum-indirect exciton reservoirs. We demonstrate that the corresponding spectral profiles are distinct from those of bright excitons with direct radiative decay pathways. The lineshape asymmetry reflects thermal distribution of exciton states with finite center-of-mass momenta, characteristic for phonon sideband emission. The extracted temperature of the exciton reservoirs is found to generally follow that of the crystal lattice, with deviations reflecting overheated populations. The latter are most pronounced in the bilayer case and at lowest temperatures. Our results add to the understanding of phonon-assisted recombination of momentum-dark excitons and, more generally, establish means to access the thermal distribution of finite-momentum excitons in atomically thin semiconductors with indirect bandgaps.
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Submitted 18 October, 2021;
originally announced October 2021.
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Moiré excitons in MoSe$_2$-WSe$_2$ heterobilayers and heterotrilayers
Authors:
Michael Förg,
Anvar S. Baimuratov,
Stanislav Yu. Kruchinin,
Ilia A. Vovk,
Johannes Scherzer,
Jonathan Förste,
Victor Funk,
Kenji Watanabe,
Takashi Taniguchi,
Alexander Högele
Abstract:
Layered two-dimensional materials exhibit rich transport and optical phenomena in twisted or lattice-incommensurate heterostructures with spatial variations of interlayer hybridization arising from moiré interference effects. Here, we report experimental and theoretical studies of excitons in twisted heterobilayers and heterotrilayers of transition metal dichalcogenides. Using MoSe$_2$-WSe$_2$ sta…
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Layered two-dimensional materials exhibit rich transport and optical phenomena in twisted or lattice-incommensurate heterostructures with spatial variations of interlayer hybridization arising from moiré interference effects. Here, we report experimental and theoretical studies of excitons in twisted heterobilayers and heterotrilayers of transition metal dichalcogenides. Using MoSe$_2$-WSe$_2$ stacks as representative realizations of twisted van der Waals bilayer and trilayer heterostructures, we observe contrasting optical signatures and interpret them in the theoretical framework of interlayer moiré excitons in different spin and valley configurations. We conclude that the photoluminescence of MoSe$_2$-WSe$_2$ heterobilayer is consistent with joint contributions from radiatively decaying valley-direct interlayer excitons and phonon-assisted emission from momentum-indirect reservoirs that reside in spatially distinct regions of moiré supercells, whereas the heterotrilayer emission is entirely due to momentum-dark interlayer excitons of hybrid-layer valleys. Our results highlight the profound role of interlayer hybridization for transition metal dichalcogenide heterostacks and other realizations of multi-layered semiconductor van der Waals heterostructures.
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Submitted 15 March, 2021; v1 submitted 16 June, 2020;
originally announced June 2020.
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Exciton g-factors in monolayer and bilayer WSe$_2$ from experiment and theory
Authors:
J. Förste,
N. V. Tepliakov,
S. Yu. Kruchinin,
J. Lindlau,
V. Funk,
M. Förg,
K. Watanabe,
T. Taniguchi,
A. S. Baimuratov,
A. Högele
Abstract:
The optical properties of monolayer and bilayer transition metal dichalcogenide semiconductors are governed by excitons in different spin and valley configurations, providing versatile aspects for van der Waals heterostructures and devices. We present experimental and theoretical studies of exciton energy splittings in external magnetic field in neutral and charged WSe$_2$ monolayer and bilayer cr…
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The optical properties of monolayer and bilayer transition metal dichalcogenide semiconductors are governed by excitons in different spin and valley configurations, providing versatile aspects for van der Waals heterostructures and devices. We present experimental and theoretical studies of exciton energy splittings in external magnetic field in neutral and charged WSe$_2$ monolayer and bilayer crystals embedded in a field effect device for active do** control. We develop theoretical methods to calculate the exciton $g$-factors from first principles and tight-binding for all possible spin-valley configurations of excitons in monolayer and bilayer WSe$_2$ including valley-indirect exciton configurations. Our theoretical and experimental findings shed light on some of the characteristic photoluminescence peaks observed for monolayer and bilayer WSe$_2$. In more general terms, the theoretical aspects of our work provide new guidelines for the characterization of single and few-layer transition metal dichalcogenides, as well as their heterostructures, in the presence of external magnetic fields.
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Submitted 4 March, 2020; v1 submitted 26 February, 2020;
originally announced February 2020.
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Identifying optical signatures of momentum-dark excitons in transition metal dichalcogenide monolayers
Authors:
Jessica Lindlau,
Cedric Robert,
Victor Funk,
Jonathan Förste,
Michael Förg,
Léo Colombier,
Andre Neumann,
Emmanuel Courtade,
Shivangi Shree,
Takashi Taniguchi,
Kenji Watanabe,
Mikhail M. Glazov,
Xavier Marie,
Bernhard Urbaszek,
Alexander Högele
Abstract:
Transition metal dichalcogenide (TMD) monolayers (MLs) exhibit rich photoluminescence spectra associated with interband optical transitions of direct-gap semiconductors. Upon absorption of photons, direct excitons with zero center-of-mass momentum are formed by photo-excited electrons in the conduction band and the respective unoccupied states in the valence band of the same valley. Different spin…
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Transition metal dichalcogenide (TMD) monolayers (MLs) exhibit rich photoluminescence spectra associated with interband optical transitions of direct-gap semiconductors. Upon absorption of photons, direct excitons with zero center-of-mass momentum are formed by photo-excited electrons in the conduction band and the respective unoccupied states in the valence band of the same valley. Different spin configurations of such momentum-direct excitons as well as their charged counterparts provide a powerful platform for spin-valley and microcavity physics in two-dimensional materials. The corresponding spectral signatures, however, are insufficient to explain the main characteristic peaks observed in the photoluminescence spectra of ML TMDs on the basis of momentum-\textit{direct} excitons alone. Here, we show that the notion of momentum-\textit{indirect} excitons is important for the understanding of the versatile photoluminescence features. Taking into account phonon-assisted radiative recombination pathways for electrons and holes from dissimilar valleys, we interpret unidentified peaks in the emission spectra as acoustic and optical phonon sidebands of momentum-dark excitons. Our approach will facilitate the interpretation of optical, valley and spin phenomena in TMDs arising from bright and dark exciton manifolds.
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Submitted 25 October, 2017; v1 submitted 3 October, 2017;
originally announced October 2017.