Competing magnetic states, disorder, and the magnetic character of Fe3Ga4
Authors:
J. H. Mendez,
C. E. Ekuma,
Y. Wu,
B. W. Fulfer,
J. C. Prestigiacomo,
W. A. Shelton,
M. Jarrell,
J. Moreno,
D. P. Young,
P. W. Adams,
A. Karki,
R. **,
Julia Y. Chan,
J. F. DiTusa
Abstract:
The physical properties of metamagnetic Fe$_3$Ga$_4$ single crystals are investigated to explore the sensitivity of the magnetic states to temperature, magnetic field, and sample history. The data reveal a moderate anisotropy in the magnetization and the metamagnetic critical field along with features in the specific heat at the magnetic transitions $T_1=68$ K and $T_2=360$ K. Both $T_1$ and…
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The physical properties of metamagnetic Fe$_3$Ga$_4$ single crystals are investigated to explore the sensitivity of the magnetic states to temperature, magnetic field, and sample history. The data reveal a moderate anisotropy in the magnetization and the metamagnetic critical field along with features in the specific heat at the magnetic transitions $T_1=68$ K and $T_2=360$ K. Both $T_1$ and $T_2$ are found to be sensitive to the annealing conditions of the crystals suggesting that disorder affects the competition between the ferromagnetic (FM) and antiferromagnetic (AFM) states. Resistivity measurements reveal metallic transport with a sharp anomaly associated with the transition at $T_2$. The Hall effect is dominated by the anomalous contribution which rivals that of magnetic semiconductors in magnitude ($-5 μΩ$ cm at 2 T and 350 K) and undergoes a change of sign upon cooling into the low temperature FM state. The temperature and field dependence of the Hall effect indicate that the magnetism is likely to be highly itinerant in character and that a significant change in the electronic structure accompanies the magnetic transitions. We observe a contribution from the topological Hall effect in the AFM phase suggesting a non-coplanar contribution to the magnetism. Electronic structure calculations predict an AFM ground state with a wavevector parallel to the crystallographic $c$-axis preferred over the experimentally measured FM state by $\approx$ 50 meV per unit cell. However, supercell calculations with a small density of Fe-antisite defects introduced tend to stabilize the FM over the AFM state indicating that antisite defects may be the cause of the sensitivity to sample synthesis conditions.
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Submitted 20 April, 2015; v1 submitted 9 October, 2014;
originally announced October 2014.
Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe
Authors:
J. F. DiTusa,
S. B. Zhang,
K. Yamaura,
Y. Xiong,
J. C. Prestigiacomo,
B. W. Fulfer,
P. W. Adams,
M. I. Brickson,
D. A. Browne,
C. Capan,
Z. Fisk,
Julia Y. Chan
Abstract:
We present magnetization, specific heat, resistivity, and Hall effect measurements on the cubic B20 phase of MnGe and CoGe and compare to measurements of isostructural FeGe and electronic structure calculations. In MnGe, we observe a transition to a magnetic state at $T_c=275$ K as identified by a sharp peak in the ac magnetic susceptibility, as well as second phase transition at lower temperature…
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We present magnetization, specific heat, resistivity, and Hall effect measurements on the cubic B20 phase of MnGe and CoGe and compare to measurements of isostructural FeGe and electronic structure calculations. In MnGe, we observe a transition to a magnetic state at $T_c=275$ K as identified by a sharp peak in the ac magnetic susceptibility, as well as second phase transition at lower temperature that becomes apparent only at finite magnetic field. We discover two phase transitions in the specific heat at temperatures much below the Curie temperature one of which we associate with changes to the magnetic structure. A magnetic field reduces the temperature of this transition which corresponds closely to the sharp peak observed in the ac susceptibility at fields above 5 kOe. The second of these transitions is not affected by the application of field and has no signature in the magnetic properties or our crystal structure parameters. Transport measurements indicate that MnGe is metal with a negative magnetoresistance similar to that seen in isostructural FeGe and MnSi. Hall effect measurements reveal a carrier concentration of about 0.5 carriers per formula unit also similar to that found in FeGe and MnSi. CoGe is shown to be a low carrier density metal with a very small, nearly temperature independent diamagnetic susceptibility.
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Submitted 15 August, 2014; v1 submitted 10 July, 2014;
originally announced July 2014.
