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Fast and Sensitive Terahertz Detection in a Current-Driven Epitaxial-Graphene Asymmetric Dual-Grating-Gate FET Structure
Authors:
Koichi Tamura,
Chao Tang,
Daichi Ogiura,
Kento Suwa,
Hirokazu Fukidome,
Yuma Takida,
Hiroaki Minamide,
Tetsuya Suemitsu,
Taiichi Otsuji,
Akira Satou
Abstract:
We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps order fast response time and a high responsivity of 0.3 mA/W to the 0.95-THz radiation incidence at room temperatures. The ADGG- and the drain-source-bias depe…
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We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps order fast response time and a high responsivity of 0.3 mA/W to the 0.95-THz radiation incidence at room temperatures. The ADGG- and the drain-source-bias dependencies of the measured photoresponse showed a clear transition between plasmonic detection under periodic electron density modulation conditions with depleted regions and photothermoelectric detection under highly doped conditions without depleted regions. We identified the photothermoelectric detection that we observed as a new type of unipolar mechanism in which only electrons or holes contribute to rectifying the THz radiation under current-driven conditions. These two detection mechanisms coexist in a certain wide transcendent range of the applied bias voltages. It was also clearly manifested that the temporal photoresponse of the plasmonic and photothermoelectric detection are comparably fast on the order of 10 ps, whereas the maximal photoresponsivity of the photothermoelectric detection is almost twice as high as that of the plasmonic detection under the applied biases conditions. These results suggest that the ADGG-EG-FET THz detector will be promising for use in 6G- and 7G-class high-speed wireless communication systems.
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Submitted 3 July, 2022; v1 submitted 30 June, 2022;
originally announced July 2022.
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Influence of interface dipole layers on the performance of graphene field effect transistors
Authors:
Naoka Nagamura,
Hirokazu Fukidome,
Kosuke Nagashio,
Koji Horiba,
Takayuki Ide,
Kazutoshi Funakubo,
Keiichiro Tashima,
Akira Toriumi,
Maki Suemitsu,
Karsten Horn,
Masaharu Oshima
Abstract:
The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect transistors (GFETs). However, GFETs generally exhibit a device performance much inferior compared to the expected one. This has been attributed to a strong depen…
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The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect transistors (GFETs). However, GFETs generally exhibit a device performance much inferior compared to the expected one. This has been attributed to a strong dependence of the electronic properties of graphene on the surrounding interfaces. Here we study the interface between a graphene channel and SiO$_{2}$, and by means of photoelectron spectromicroscopy achieve a detailed determination of the course of band alignment at the interface. Our results show that the electronic properties of graphene are modulated by a hydrophilic SiO$_{2}$ surface, but not by a hydrophobic one. By combining photoelectron spectromicroscopy with GFET transport property characterization, we demonstrate that the presence of electrical dipoles in the interface, which reflects the SiO$_{2}$ surface electrochemistry, determines the GFET device performance. A hysteresis in the resistance vs. gate voltage as a function of polarity is ascribed to a reversal of the dipole layer by the gate voltage. These data pave the way for GFET device optimization.
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Submitted 7 July, 2019;
originally announced July 2019.
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Ultrafast unbalanced electron distributions in quasicrystalline 30° twisted bilayer graphene
Authors:
T. Suzuki,
T. Iimori,
S. J. Ahn,
Y. Zhao,
M. Watanabe,
J. Xu,
M. Fujisawa,
T. Kanai,
N. Ishii,
J. Itatani,
K. Suwa,
H. Fukidome,
S. Tanaka,
J. R. Ahn,
K. Okazaki,
S. Shin,
F. Komori,
I. Matsuda
Abstract:
Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle Θ has become an important degree of freedom for exploring novel states of matters, i.e. two-dimensional superconductivity ( Θ = 1.1°)6, 7 and a two-dimensional quasicrystal (Θ = 30°)8, 9. We report herein experimental observation on the photo-induced ultrafast dynamics of Dirac fermions in t…
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Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle Θ has become an important degree of freedom for exploring novel states of matters, i.e. two-dimensional superconductivity ( Θ = 1.1°)6, 7 and a two-dimensional quasicrystal (Θ = 30°)8, 9. We report herein experimental observation on the photo-induced ultrafast dynamics of Dirac fermions in the quasicrystalline 30° twisted bilayer graphene (QCTBG). We discover that hot carriers are asymmetrically distributed between the two graphene layers, followed by the opposing femtosecond relaxations, by using time- and angle-resolved photoemission spectroscopy. The key mechanism involves the differing carrier transport between layers and the transient do** from the substrate interface. The ultrafast dynamics scheme continues after the Umklapp scattering, which is induced by the incommensurate interlayer stacking of the quasi-crystallinity. The dynamics in the atomic layer opens the possibility of new applications and creates interdisciplinary links in the optoelectronics of van der Waals crystals.
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Submitted 10 May, 2019;
originally announced May 2019.
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A Table-Top Formation of Bilayer Quasi-Free-Standing Epitaxial-Graphene on SiC(0001) by Microwave Annealing in Air
Authors:
Kwan-Soo Kim,
Goon-Ho Park,
Hirokazu Fukidome,
Someya Takashi,
Iimori Takushi,
Komori Fumio,
Matsuda Iwao,
Maki Suemitsu
Abstract:
We propose a table-top method to obtain bilayer quasi-free-standing epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the buffer layer is decoupled from the SiC substrate and becomes the second EG layer as confirmed by the low energy electron diffraction, high-resolution transmission electron microscopy, Ram…
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We propose a table-top method to obtain bilayer quasi-free-standing epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the buffer layer is decoupled from the SiC substrate and becomes the second EG layer as confirmed by the low energy electron diffraction, high-resolution transmission electron microscopy, Raman scattering spectroscopy, X-ray photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy. The most likely mechanism of the decoupling is given by the oxidation of the SiC surface, which is quite similar to what happens in conventional annealing method in air but with a process time by more than one order of magnitude less.
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Submitted 17 May, 2017;
originally announced May 2017.
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Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Epitaxial Graphene Heterostructures
Authors:
Taiichi Otsuji,
Hiromi Karasawa,
Tsuneyoshi Komori,
Takayuki Watanabe,
Hirokazu Fukidome,
Maki Suemitsu,
Akira Satou,
Victor Ryzhii
Abstract:
We experimentally observe the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an epitaxial graphene-on-Si heterostructure under pum** with a 1550-nm, 80-fs pulsed fiber laser beam and probing with the corresponding terahertz (THz) beam generated by and synchronized with the pum** laser. The time-resolved electric-field intensity originating fro…
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We experimentally observe the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an epitaxial graphene-on-Si heterostructure under pum** with a 1550-nm, 80-fs pulsed fiber laser beam and probing with the corresponding terahertz (THz) beam generated by and synchronized with the pum** laser. The time-resolved electric-field intensity originating from the coherent terahertz photon emission is electro-optically sampled in total-reflection geometry. The Fourier spectrum from 1.8 to 5.2 THz agrees well the pum** photon spectrum. This result is attributed to amplified emission of THz radiation from the graphene sample stimulated by the THz probe beam, and provides evidence for the occurrence of negative dynamic conductivity in the terahertz spectral range.
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Submitted 2 February, 2010; v1 submitted 27 January, 2010;
originally announced January 2010.
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Epitaxial Graphene on Silicon toward Graphene-Silicon Fusion Electronics
Authors:
Hirokazu Fukidome,
Ryota Takahashi,
Yu Miyamoto,
Hiroyuki Handa,
Hyun-Chul Kang,
Hiromi Karasawa,
Tetsuya Suemitsu,
Taiichi Otsuji,
Akitaka Yoshigoe,
Yuden Teraoka,
Maki Suemitsu
Abstract:
Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene on SiC substrates by thermal decomposition of surface layers has proved itself quite satisfactory both in quality and in process reliability. Even modulation…
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Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene on SiC substrates by thermal decomposition of surface layers has proved itself quite satisfactory both in quality and in process reliability. Even modulation of structural and hence electronic properties of graphene is possible by tuning the graphene/SiC interface structure. The challenges for this graphene-on-SiC technology, however, are the abdication of the well-established Si technologies and the high production cost of the SiC bulk crystals. Here, we demonstrate that formation of epitaxial graphene on silicon substrate is possible, by graphitizing epitaxial SiC thin films formed on silicon substrates. This graphene-on-silicon (GOS) method enables us to form a large-area film of well-ordered sp2 carbon networks on Si substrates and to fabricate electronic devices based on the structure.
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Submitted 27 January, 2010;
originally announced January 2010.
