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Advances toward high-accuracy gigahertz operation of tunable-barrier single-hole pumps in silicon
Authors:
Gento Yamahata,
Akira Fujiwara
Abstract:
Precise and reproducible current generation is key to realize quantum current standards in metrology. A promising candidate is a tunable-barrier single-charge pump, which can accurately transfer single charges one by one with an error rate of less than ppm level. Although several high-accuracy measurements have revealed such a high performance of the pumps, it is necessary to further pursue the po…
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Precise and reproducible current generation is key to realize quantum current standards in metrology. A promising candidate is a tunable-barrier single-charge pump, which can accurately transfer single charges one by one with an error rate of less than ppm level. Although several high-accuracy measurements have revealed such a high performance of the pumps, it is necessary to further pursue the possibility of high-precision operation toward reproducible generation of the pum** current in many devices. Here, we investigate in detail a silicon single-hole pumps, which are potentially expected to have a superior performance to single-electron pumps because of a heavy effective mass of holes. Temperature dependence measurements of current generated by the single-hole pump revealed a high energy selectivity of the tunnel barrier, which is a critical parameter to achieve high-accuracy operation. In addition, we applied the dynamic gate compensation technique to the single-hole pump and confirm the further performance improvement. Furthermore, we demonstrate gigahertz operation of a single-hole pump with an estimated lower bound of an error rate of around 0.01 ppm. These results imply a superior capability of single-hole pumps in silicon toward high-accuracy, high-speed, and stable single-charge pum** appropriate for not only metrological applications but also quantum device applications.
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Submitted 1 October, 2023;
originally announced October 2023.
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Valley splitting by extended zone effective mass approximation incorporating strain in silicon
Authors:
**ichiro Noborisaka,
Toshiaki Hayashi,
Akira Fujiwara,
Katsuhiko Nishiguchi
Abstract:
Silicon metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on a SIMOX (001) substrate, which is a kind of silicon on insulator (SOI) substrate, that is annealed at high temperature for a long time are known to exhibit large valley splitting, but the origin of this splitting has long been unknown. Extended zone effective-mass approximation (EMA) predicts that strain significant…
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Silicon metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on a SIMOX (001) substrate, which is a kind of silicon on insulator (SOI) substrate, that is annealed at high temperature for a long time are known to exhibit large valley splitting, but the origin of this splitting has long been unknown. Extended zone effective-mass approximation (EMA) predicts that strain significantly affects valley splitting. In this study, we analyzed valley splitting based on this theory and found that the shear strain along <110> of approximately 5% near the buried oxide (BOX) interface is a promising source for large valley splitting.
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Submitted 10 September, 2023;
originally announced September 2023.
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Adaptive quantum state estimation for two optical point sources
Authors:
Masataka Kimizu,
Fuyuhiko Tanaka,
Akio Fujiwara
Abstract:
In classical optics, there is a well-known resolution limit, called Rayleigh's curse, in the separation of two incoherent optical sources in close proximity. Recently, Tsang et al. revealed that this difficulty may be circumvented in the framework of quantum theory. Following their work, various estimation methods have been proposed to overcome Rayleigh's curse, but none of them enables us to esti…
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In classical optics, there is a well-known resolution limit, called Rayleigh's curse, in the separation of two incoherent optical sources in close proximity. Recently, Tsang et al. revealed that this difficulty may be circumvented in the framework of quantum theory. Following their work, various estimation methods have been proposed to overcome Rayleigh's curse, but none of them enables us to estimate the positions of two point sources simultaneously based on single-photon measurements with high accuracy. In this study, we propose a method to simultaneously estimate the positions of two point sources with the highest accuracy using adaptive quantum state estimation scheme.
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Submitted 3 August, 2023;
originally announced August 2023.
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Autoparallelity of Quantum Statistical Manifolds in The Light of Quantum Estimation Theory
Authors:
Hiroshi Nagaoka,
Akio Fujiwara
Abstract:
In this paper we study the autoparallelity w.r.t. the e-connection for an information-geometric structure called the SLD structure, which consists of a Riemannian metric and mutually dual e- and m-connections, induced on the manifold of strictly positive density operators. Unlike the classical information geometry, the e-connection has non-vanishing torsion, which brings various mathematical diffi…
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In this paper we study the autoparallelity w.r.t. the e-connection for an information-geometric structure called the SLD structure, which consists of a Riemannian metric and mutually dual e- and m-connections, induced on the manifold of strictly positive density operators. Unlike the classical information geometry, the e-connection has non-vanishing torsion, which brings various mathematical difficulties. The notion of e-autoparallel submanifolds is regarded as a quantum version of exponential families in classical statistics, which is known to be characterized as statistical models having efficient estimators (unbiased estimators uniformly achieving the equality in the Cramer-Rao inequality). As quantum extensions of this classical result, we present two different forms of estimation-theoretical characterizations of the e-autoparallel submanifolds. We also give several results on the e-autoparallelity, some of which are valid for the autoparallelity w.r.t. an affine connection in a more general geometrical situation.
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Submitted 7 July, 2023;
originally announced July 2023.
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Coulomb collisions of hot and cold single electrons in series-coupled silicon single-electron pumps
Authors:
Gento Yamahata,
Nathan Johnson,
Akira Fujiwara
Abstract:
Control of the Coulomb interaction between single electrons is vital for realizing quantum information processing using flying electrons and, particularly, for the realization of deterministic two-qubit operations. Since the strength of the Coulomb interaction increases with decreasing distance, a collision experiment of single electrons would be an ideal way to investigate it. Moreover, it would…
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Control of the Coulomb interaction between single electrons is vital for realizing quantum information processing using flying electrons and, particularly, for the realization of deterministic two-qubit operations. Since the strength of the Coulomb interaction increases with decreasing distance, a collision experiment of single electrons would be an ideal way to investigate it. Moreover, it would be useful to study such a Coulomb collision in silicon system, which has been extensively studied for qubit applications but so far has not been used for making Coulomb collisions at the single-electron level. Here, we made two series-coupled tunable-barrier single-electron pumps in silicon and used one to inject a hot single electron into the other pump in each pum** cycle. The hot single electron collides with a cold single electron confined in the other single-electron pump. We observed a current flow due to ejection not only of the hot single electron but also of the confined cold single electron. The latter leads to an excess current at a current plateau at a certain voltage range. We also found that increasing the number of cold electrons from one to two increased the cold-electron current by at least twofold. These results can be explained by a charging effect due to the Coulomb interaction. This observation is an important step toward quantum manipulation of flying single electrons in silicon.
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Submitted 30 March, 2023;
originally announced March 2023.
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Precision measurement of an electron pump at 2 GHz
Authors:
Stephen Giblin,
Gento Yamahata,
Akira Fujiwara,
Masaya Kataoka
Abstract:
A well-characterised sample of silicon tunable-barrier electron pump has been operated at a frequency of 2 GHz using a custom drive waveform, generating a pump current of 320 pA. Precision measurements of the current were made as a function of pump control parameters, using a blind protocol, over a 7-week campaign. The combined standard uncertainty for each 10 hour measurement was 0.1 parts per mi…
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A well-characterised sample of silicon tunable-barrier electron pump has been operated at a frequency of 2 GHz using a custom drive waveform, generating a pump current of 320 pA. Precision measurements of the current were made as a function of pump control parameters, using a blind protocol, over a 7-week campaign. The combined standard uncertainty for each 10 hour measurement was 0.1 parts per million. The pump current exhibits a plateau along the exit gate voltage flat to approximately 0.1 parts per million, but offset from ef by 0.2 parts per million. This offset may be a sign of errors in the current traceability chain, indicating a limit to the accuracy of small current scaling using existing methods based on cryogenic current comparators.
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Submitted 11 January, 2023;
originally announced January 2023.
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Efficiency of estimators for locally asymptotically normal quantum statistical models
Authors:
Akio Fujiwara,
Koichi Yamagata
Abstract:
We herein establish an asymptotic representation theorem for locally asymptotically normal quantum statistical models. This theorem enables us to study the asymptotic efficiency of quantum estimators such as quantum regular estimators and quantum minimax estimators, leading to a universal tight lower bound beyond the i.i.d. assumption. This formulation complements the theory of quantum contiguity…
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We herein establish an asymptotic representation theorem for locally asymptotically normal quantum statistical models. This theorem enables us to study the asymptotic efficiency of quantum estimators such as quantum regular estimators and quantum minimax estimators, leading to a universal tight lower bound beyond the i.i.d. assumption. This formulation complements the theory of quantum contiguity developed in the previous paper [Fujiwara and Yamagata, Bernoulli 26 (2020) 2105-2141], providing a solid foundation of the theory of weak quantum local asymptotic normality.
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Submitted 2 September, 2022;
originally announced September 2022.
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Noise-induced degeneration in online learning
Authors:
Yuzuru Sato,
Daiji Tsutsui,
Akio Fujiwara
Abstract:
In order to elucidate the plateau phenomena caused by vanishing gradient, we herein analyse stability of stochastic gradient descent near degenerated subspaces in a multi-layer perceptron. In stochastic gradient descent for Fukumizu-Amari model, which is the minimal multi-layer perceptron showing non-trivial plateau phenomena, we show that (1) attracting regions exist in multiply degenerated subsp…
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In order to elucidate the plateau phenomena caused by vanishing gradient, we herein analyse stability of stochastic gradient descent near degenerated subspaces in a multi-layer perceptron. In stochastic gradient descent for Fukumizu-Amari model, which is the minimal multi-layer perceptron showing non-trivial plateau phenomena, we show that (1) attracting regions exist in multiply degenerated subspaces, (2) a strong plateau phenomenon emerges as a noise-induced synchronisation, which is not observed in deterministic gradient descent, (3) an optimal fluctuation exists to minimise the escape time from the degenerated subspace. The noise-induced degeneration observed herein is expected to be found in a broad class of machine learning via neural networks.
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Submitted 4 December, 2021; v1 submitted 24 August, 2020;
originally announced August 2020.
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Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility
Authors:
Stephen Giblin,
Emma Mykkänen,
Antti Kemppinen,
Pekka Immonen,
Antti Manninen,
Máté Jenei,
Mikko Möttönen,
Gento Yamahata,
Akira Fujiwara,
Masaya Kataoka
Abstract:
A silicon electron pump operating at the temperature of liquid helium has demonstrated repeatable operation with sub-ppm accuracy. The pump current, approximately 168 pA, is measured by three laboratories, and the measurements agree with the expected current ef within the uncertainties which range from 0.2 ppm to 1.3 ppm. All the measurements are carried out in zero applied magnetic field, and the…
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A silicon electron pump operating at the temperature of liquid helium has demonstrated repeatable operation with sub-ppm accuracy. The pump current, approximately 168 pA, is measured by three laboratories, and the measurements agree with the expected current ef within the uncertainties which range from 0.2 ppm to 1.3 ppm. All the measurements are carried out in zero applied magnetic field, and the pump drive signal is a sine wave. The combination of simple operating conditions with high accuracy demonstrates the possibility that an electron pump can operate as a current standard in a National Measurement Institute. We also discuss other practical aspects of using the electron pump as a current standard, such as testing its robustness to changes in the control parameters, and using a rapid tuning procedure to locate the optimal operation point..
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Submitted 23 January, 2020; v1 submitted 4 December, 2019;
originally announced December 2019.
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Structural Alternation Correlated to the Conductivity Enhancement of PEDOT:PSS Films by Secondary Do**
Authors:
K. Itoh,
Y. Kato,
Y. Honma,
H. Masunaga,
A. Fujiwara,
S. Iguchi,
T. Sasaki
Abstract:
"Secondary do**" in poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) is quite effective and a frequently used method for the conductivity enhancement. This simple approach, the addition of co-solvents to the PEDOT:PSS solution before film fabrication, is an essential way to derive the high electrical performance of PEDOT:PSS, but the mechanism still remains unclear. In this s…
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"Secondary do**" in poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) is quite effective and a frequently used method for the conductivity enhancement. This simple approach, the addition of co-solvents to the PEDOT:PSS solution before film fabrication, is an essential way to derive the high electrical performance of PEDOT:PSS, but the mechanism still remains unclear. In this study, nanoscale structural changes synchronized with the conductivity enhancement via secondary do** in PEDOT:PSS films were investigated. During secondary do** with ethylene glycol near the critical dopant concentration, non-crystalized PEDOT molecules uncoupled from PSS chains and then underwent nano-crystallization. These structural changes might be the key driving force for conductivity enhancement via secondary do**.
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Submitted 20 September, 2019;
originally announced September 2019.
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Derivation of potential profile of a dynamic quantum dot
Authors:
Nathan Johnson,
Gento Yamahata,
Akira Fujiwara
Abstract:
We report a method to derive the potential barrier profile shape in a dynamic quantum dot and show the loading statistics, and hence accuracy of electron transfer, depend significantly on the shape of the barrier. This method takes a further step towards tunable barrier shapes, which would greatly increase the accuracy of single electron sources, allowing the single electron current to be useful f…
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We report a method to derive the potential barrier profile shape in a dynamic quantum dot and show the loading statistics, and hence accuracy of electron transfer, depend significantly on the shape of the barrier. This method takes a further step towards tunable barrier shapes, which would greatly increase the accuracy of single electron sources, allowing the single electron current to be useful for quantum sensing, quantum information and metrology. We apply our method to the case of a tunable-barrier single-electron pump, an exemplary device that shows promise as a source of hot single electron wavepackets.
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Submitted 19 July, 2019;
originally announced July 2019.
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Picosecond coherent electron motion in a silicon single-electron source
Authors:
Gento Yamahata,
Sungguen Ryu,
Nathan Johnson,
H. -S. Sim,
Akira Fujiwara,
Masaya Kataoka
Abstract:
Understanding ultrafast coherent electron dynamics is necessary for application of a single-electron source to metrological standards, quantum information processing, including electron quantum optics, and quantum sensing. While the dynamics of an electron emitted from the source has been extensively studied, there is as yet no study of the dynamics inside the source. This is because the speed of…
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Understanding ultrafast coherent electron dynamics is necessary for application of a single-electron source to metrological standards, quantum information processing, including electron quantum optics, and quantum sensing. While the dynamics of an electron emitted from the source has been extensively studied, there is as yet no study of the dynamics inside the source. This is because the speed of the internal dynamics is typically higher than 100 GHz, beyond state-of-the-art experimental bandwidth. Here, we theoretically and experimentally demonstrate that the internal dynamics in a silicon singleelectron source comprising a dynamic quantum dot can be detected, utilising a resonant level with which the dynamics is read out as gate-dependent current oscillations. Our experimental observation and simulation with realistic parameters show that an electron wave packet spatially oscillates quantum-coherently at $\sim$ 200 GHz inside the source. Our results will lead to a protocol for detecting such fast dynamics in a cavity and offer a means of engineering electron wave packets. This could allow high-accuracy current sources, high-resolution and high-speed electromagnetic-field sensing, and high-fidelity initialisation of flying qubits.
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Submitted 18 March, 2019;
originally announced March 2019.
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Evidence for universality of tunable-barrier electron pumps
Authors:
Stephen P. Giblin,
Akira Fujiwara,
Gento Yamahata,
Myung-Ho Bae,
Nam Kim,
Alessandro Rossi,
Mikko Möttönen,
Masaya Kataoka
Abstract:
We review recent precision measurements on semiconductor tunable-barrier electron pumps operating in a ratchet mode. Seven studies on five different designs of pumps have reported measurements of the pump current with relative total uncertainties around $10^{-6}$ or less. Combined with theoretical models of electron capture by the pumps, these experimental data exhibits encouraging evidence that t…
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We review recent precision measurements on semiconductor tunable-barrier electron pumps operating in a ratchet mode. Seven studies on five different designs of pumps have reported measurements of the pump current with relative total uncertainties around $10^{-6}$ or less. Combined with theoretical models of electron capture by the pumps, these experimental data exhibits encouraging evidence that the pumps operate according to a universal mechanism, independent of the details of device design. Evidence for robustness of the pump current against changes in the control parameters is at a more preliminary stage, but also encouraging, with two studies reporting robustness of the pump current against three or more parameters in the range of $\sim\!5 \times 10^{-7}$ to $\sim\!2 \times 10^{-6}$. This review highlights the need for an agreed protocol for tuning the electron pump for optimal operation, as well as more rigorous evaluations of the robustness in a wide range of pump designs.
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Submitted 23 April, 2019; v1 submitted 16 January, 2019;
originally announced January 2019.
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Influence of High-Speed Railway System on Inter-city Travel Behavior in Vietnam
Authors:
Tho V. Le,
Junyi Zhang,
Makoto Chikaraishi,
Akimasa Fujiwara
Abstract:
To analyze the influence of introducing the High-Speed Railway (HSR) system on business and non-business travel behavior, this study develops an integrated inter-city travel demand model to represent trip generations, destination choice, and travel mode choice behavior. The accessibility calculated from the RP/SP (Revealed Preference/Stated Preference) combined nested logit model of destination an…
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To analyze the influence of introducing the High-Speed Railway (HSR) system on business and non-business travel behavior, this study develops an integrated inter-city travel demand model to represent trip generations, destination choice, and travel mode choice behavior. The accessibility calculated from the RP/SP (Revealed Preference/Stated Preference) combined nested logit model of destination and mode choices is used as an explanatory variable in the trip frequency models. One of the important findings is that additional travel would be induced by introducing HSR. Our simulation analyses also reveal that HSR and conventional airlines will be the main modes for middle distances and long distances, respectively. The development of zones may highly influence the destination choices for business purposes, while prices of HSR and Low-Cost Carriers affect choices for non-business purposes. Finally, the research reveals that people on non-business trips are more sensitive to changes in travel time, travel cost and regional attributes than people on business trips.
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Submitted 10 December, 2018;
originally announced December 2018.
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Influence of introducing high speed railways on intercity travel behavior in Vietnam
Authors:
Tho V. Le,
Junyi Zhang,
Makoto Chikaraishi,
Akimasa Fujiwara
Abstract:
It is one of hottest topics in Vietnam whether to construct a High Speed Rail (HSR) system or not in near future. To analyze the impacts of introducing the HSR on the intercity travel behavior, this research develops an integrated intercity demand forecasting model to represent trip generation and frequency, destination choice and travel mode choice behavior. For this purpose, a comprehensive ques…
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It is one of hottest topics in Vietnam whether to construct a High Speed Rail (HSR) system or not in near future. To analyze the impacts of introducing the HSR on the intercity travel behavior, this research develops an integrated intercity demand forecasting model to represent trip generation and frequency, destination choice and travel mode choice behavior. For this purpose, a comprehensive questionnaire survey with both Revealed Preference (RP) information (an inter-city trip diary) and Stated Preference (SP) information was conducted in Hanoi in 2011. In the SP part, not only HSR, but also Low Cost Carrier is included in the choice set, together with other existing inter-city travel modes. To make full use of the advantages of each type of data and to overcome their disadvantages, RP and SP data are combined to describe the destination choice and mode choice behavior, while trip generation and frequency are represented by using the RP data. The model estimation results show the inter-relationship between trip generation and frequency, destination choice and travel mode choice, and confirm that those components should not dealt with separately.
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Submitted 29 September, 2018;
originally announced October 2018.
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Noncommutative Lebesgue decomposition and contiguity with applications in quantum statistics
Authors:
Akio Fujiwara,
Koichi Yamagata
Abstract:
We herein develop a theory of contiguity in the quantum domain based upon a novel quantum analogue of the Lebesgue decomposition. The theory thus formulated is pertinent to the weak quantum local asymptotic normality introduced in the previous paper [Yamagata, Fujiwara, and Gill, \textit{Ann. Statist.}, \textbf{41} (2013) 2197-2217.], yielding substantial enlargement of the scope of quantum statis…
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We herein develop a theory of contiguity in the quantum domain based upon a novel quantum analogue of the Lebesgue decomposition. The theory thus formulated is pertinent to the weak quantum local asymptotic normality introduced in the previous paper [Yamagata, Fujiwara, and Gill, \textit{Ann. Statist.}, \textbf{41} (2013) 2197-2217.], yielding substantial enlargement of the scope of quantum statistics.
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Submitted 31 October, 2019; v1 submitted 31 March, 2018;
originally announced April 2018.
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Mesoscopic 2D Charge Transport in Commonplace PEDOT:PSS Films
Authors:
Yuta Honma,
Keisuke Itoh,
Hiroyasu Masunaga,
Akihiko Fujiwara,
Terukazu Nishizaki,
Satoshi Iguchi,
Takahiko Sasaki
Abstract:
The correlation between the transport properties and structural degrees of freedom of conducting polymers is a central concern in both practical applications and scientific research. In this study, we demonstrated the existence of mesoscopic two-dimensional (2D) coherent charge transport in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film by performing structural investigat…
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The correlation between the transport properties and structural degrees of freedom of conducting polymers is a central concern in both practical applications and scientific research. In this study, we demonstrated the existence of mesoscopic two-dimensional (2D) coherent charge transport in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film by performing structural investigations and high-field magnetoconductance (MC) measurements in magnetic fields of up to 15 T. We succeeded in observing marked positive MCs reflecting 2D electronic states in a conventional drop-cast film. This low-dimensional feature is surprising, since PEDOT:PSS-a mixture of two different polymers-seems to be significantly different from crystalline 2D materials in the viewpoint of the structural inhomogeneity, especially in popular drop-cast thick films. The results of the structural experiments suggest that such 2D transport originates from the nanometer-scale self-assembled laminated structure, which is composed of PEDOT nanocrystals wrapped by insulating sheets consisting of amorphous PSSs. These results indicate that charge transport in the PEDOT:PSS film can be divided into two regimes: mesoscopic 2D coherent tunneling and macroscopic three-dimensional hop** among 2D states. Our findings elucidate the hieratical nature of charge transport in the PEDOT:PSS film, which could provide new insight into a recent engineering concern, i.e., the anisotropic conductance.
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Submitted 21 January, 2018; v1 submitted 7 January, 2018;
originally announced January 2018.
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Estimation of π-π Electronic Couplings from Current Measurements
Authors:
J. Trasobaresa,
J. Rech,
T. Jonckheere,
T. Martin,
O. Aleveque,
E. Levillain,
V. Diez-Cabanes,
Y. Olivier,
J. Cornil,
J. P. Nys,
R. Sivakumarasamy,
K. Smaali,
P. Leclere,
A. Fujiwara,
D. Théron,
D. Vuillaume,
N. Clément
Abstract:
The π-π interactions between organic molecules are among the most important parameters for optimizing the transport and optical properties of organic transistors, light-emitting diodes, and (bio-) molecular devices. Despite substantial theoretical progress, direct experimental measurement of the π-π electronic coupling energy parameter t has remained an old challenge due to molecular structural va…
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The π-π interactions between organic molecules are among the most important parameters for optimizing the transport and optical properties of organic transistors, light-emitting diodes, and (bio-) molecular devices. Despite substantial theoretical progress, direct experimental measurement of the π-π electronic coupling energy parameter t has remained an old challenge due to molecular structural variability and the large number of parameters that affect the charge transport. Here, we propose a study of π-π interactions from electrochemical and current measurements on a large array of ferrocene-thiolated gold nanocrystals. We confirm the theoretical prediction that t can be assessed from a statistical analysis of current histograms. The extracted value of t ca. 35 meV is in the expected range based on our density functional theory analysis. Furthermore, the t distribution is not necessarily Gaussian and could be used as an ultrasensitive technique to assess intermolecular distance fluctuation at the subangström level. The present work establishes a direct bridge between quantum chemistry, electrochemistry, organic electronics, and mesoscopic physics, all of which were used to discuss results and perspectives in a quantitative manner.
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Submitted 2 April, 2017;
originally announced April 2017.
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Noncommutative Lebesgue decomposition with application to quantum local asymptotic normality
Authors:
Akio Fujiwara,
Koichi Yamagata
Abstract:
We develop a theory of local asymptotic normality in the quantum domain based on a noncommutative extension of the Lebesgue decomposition. This formulation gives a substantial generalization of the previous paper [Yamagata, Fujiwara, and Gill (2013). Ann. Statist., 41, 2197-2217.], extending the scope of the quantum local asymptotic normality to a wider class of quantum statistical models that com…
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We develop a theory of local asymptotic normality in the quantum domain based on a noncommutative extension of the Lebesgue decomposition. This formulation gives a substantial generalization of the previous paper [Yamagata, Fujiwara, and Gill (2013). Ann. Statist., 41, 2197-2217.], extending the scope of the quantum local asymptotic normality to a wider class of quantum statistical models that comprise density operators of mixed ranks.
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Submitted 22 March, 2017;
originally announced March 2017.
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Data processing for qubit state tomography: An information geometric approach
Authors:
Akio Fujiwara,
Koichi Yamagata
Abstract:
A statistically feasible data post-processing method for the conventional qubit state tomography is studied from an information geometrical point of view. It is shown that the space $(-1,1)^3$ of the Stokes parameters $(ξ_1, ξ_2,ξ_3)$ that specify qubit states should be regarded as a Riemannian manifold endowed with a metric $g_{ij}:=δ_{ij}/(1-(ξ_i)^2)$, and that the data processing based on the m…
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A statistically feasible data post-processing method for the conventional qubit state tomography is studied from an information geometrical point of view. It is shown that the space $(-1,1)^3$ of the Stokes parameters $(ξ_1, ξ_2,ξ_3)$ that specify qubit states should be regarded as a Riemannian manifold endowed with a metric $g_{ij}:=δ_{ij}/(1-(ξ_i)^2)$, and that the data processing based on the maximum likelihood method is realized by the orthogonal projection from the empirical distribution onto the Bloch sphere with respect to the metric $g_{ij}$. An efficient algorithm for computing the maximum likelihood estimate is also proposed.
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Submitted 29 August, 2016;
originally announced August 2016.
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Information geometry of sandwiched Rényi $α$-divergence
Authors:
Kaito Takahashi,
Akio Fujiwara
Abstract:
Information geometrical structure $(g^{(D_α)}, \nabla^{(D_α)},\nabla^{(D_α)*})$ induced from the sandwiched Rényi $α$-divergence $D_α(ρ\|σ):=\frac{1}{α(α-1)}\log\,{\rm Tr} \left(σ^{\frac{1-α}{2α}}ρ\,σ^{\frac{1-α}{2α}}\right)^α$ on a finite quantum state space $\mathcal{S}$ is studied. It is shown that the Riemannian metric $g^{(D_α)}$ is monotone if and only if…
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Information geometrical structure $(g^{(D_α)}, \nabla^{(D_α)},\nabla^{(D_α)*})$ induced from the sandwiched Rényi $α$-divergence $D_α(ρ\|σ):=\frac{1}{α(α-1)}\log\,{\rm Tr} \left(σ^{\frac{1-α}{2α}}ρ\,σ^{\frac{1-α}{2α}}\right)^α$ on a finite quantum state space $\mathcal{S}$ is studied. It is shown that the Riemannian metric $g^{(D_α)}$ is monotone if and only if $α\in(-\infty, -1]\cup [\frac{1}{2},\infty)$, and that the quantum statistical manifold $({\mathcal{S}}, g^{(D_α)}, \nabla^{(D_α)},\nabla^{(D_α)*})$ is dually flat if and only if $α=1$.
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Submitted 29 August, 2016;
originally announced August 2016.
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Metallic behaviour in SOI quantum wells with strong intervalley scattering
Authors:
V. T. Renard,
I. Duchemin,
Y. Niida,
A. Fujiwara,
Y. Hirayama,
K. Takashina
Abstract:
The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the interest has a longer history since the valley degree of freedom had been identified as a key parameter in the observation of the controversial "metallic behaviour" in…
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The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the interest has a longer history since the valley degree of freedom had been identified as a key parameter in the observation of the controversial "metallic behaviour" in two dimensions. However, while it has been recently demonstrated that lifting valley degeneracy can destroy the metallic behaviour, little is known about the role of intervalley scattering. Here, we show that the metallic behaviour can be observed in the presence of strong interval-ley scattering in silicon on insulator (SOI) quantum wells. Analysis of the conductivity in terms of quantum corrections reveals that interactions are much stronger in SOI than in conventional MOSFETs, leading to the metallic behaviour despite the strong intervalley scattering. The prospect of manipulating the valley degree of freedom in materials like AlAs, 1 silicon 2--4 graphene,
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Submitted 27 August, 2015;
originally announced August 2015.
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Valley polarization assisted spin polarization in two dimensions
Authors:
V. T. Renard,
B. A. Piot,
X. Waintal,
G. Fleury,
D. Cooper,
Y. Niida,
D. Tregurtha,
A. Fujiwara,
Y. Hirayama,
K. Takashina
Abstract:
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such phenomena as the fractional quantum Hall effect and the metal-insulator transition. Here, we address the electrons' spin alignment in a magnetic field in silico…
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Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such phenomena as the fractional quantum Hall effect and the metal-insulator transition. Here, we address the electrons' spin alignment in a magnetic field in silicon-on-insulator quantum wells under valley polarisation. In stark contrast to expectations from a non-interacting model, we show experimentally that less magnetic field can be required to fully spin polarise a valley-polarised system than a valley-degenerate one. Furthermore, we show that these observations are quantitatively described by parameter free ab initio quantum Monte Carlo simulations. We interpret the results as a manifestation of the greater stability of the spin and valley degenerate system against ferromagnetic instability and Wigner crystalisation which in turn suggests the existence of a new strongly correlated electron liquid at low electron densities.
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Submitted 5 June, 2015;
originally announced June 2015.
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Switching of Conducting Planes by Partial Dimer Formation in IrTe$_2$
Authors:
Tatsuya Toriyama,
Masao Kobori,
Takehisa Konishi,
Yukinori Ohta,
Kunihisa Sugimoto,
Jungeun Kim,
Akihiko Fujiwara,
Sunseng Pyon,
Kazutaka Kudo,
Minoru Nohara
Abstract:
Single-crystal X-ray diffraction was employed to study the structural-electronic phase transition of IrTe$_2$ at approximately 270 K. The low-temperature structure was found to be a triclinic (space group $P\bar{1}$) characterized by the partial formation of Ir$_2$ dimers in the triangular lattice of IrTe$_2$, resulting in a structural modulation with a wave vector of ${\bf q} = (1/5, 0, -1/5)$. F…
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Single-crystal X-ray diffraction was employed to study the structural-electronic phase transition of IrTe$_2$ at approximately 270 K. The low-temperature structure was found to be a triclinic (space group $P\bar{1}$) characterized by the partial formation of Ir$_2$ dimers in the triangular lattice of IrTe$_2$, resulting in a structural modulation with a wave vector of ${\bf q} = (1/5, 0, -1/5)$. First-principles band calculations demonstrate that tilted two-dimensional Fermi surfaces emerge in the triclinic phase, suggesting that switching of the conducting planes occurs from the basal plane of the trigonal IrTe$_2$ to the tilted plane normal to ${\bf q}$ of the triclinic IrTe$_2$.
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Submitted 5 February, 2014;
originally announced February 2014.
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Water Electrolysis and Energy Harvesting with 0D Ion-Sensitive Field-Effect Transistors
Authors:
N. Clement,
K. Nishiguchi,
J. F. Dufreche,
D. Guerin,
A. Fujiwara,
D. Vuillaume
Abstract:
The relationship of the gas bubble size to the size distribution critically influences the effectiveness of electrochemical processes. Several optical and acoustical techniques have been used to characterize the size and emission frequency of bubbles. Here, we used zero-dimensional (0D) ion-sensitive field-effect transistors (ISFETs) buried under a microbath to detect the emission of individual bu…
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The relationship of the gas bubble size to the size distribution critically influences the effectiveness of electrochemical processes. Several optical and acoustical techniques have been used to characterize the size and emission frequency of bubbles. Here, we used zero-dimensional (0D) ion-sensitive field-effect transistors (ISFETs) buried under a microbath to detect the emission of individual bubbles electrically and to generate statistics on the bubble emission time. The bubble size was evaluated via a simple model of the electrolytic current. We suggest that energy lost during water electrolysis could be used to generate electric pulses at an optimal efficiency with an array of 0D ISFETs.
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Submitted 25 July, 2013;
originally announced July 2013.
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Superconductivity Induced by Breaking Te2 Dimers of AuTe2
Authors:
Kazutaka Kudo,
Hiroyuki Ishii,
Masaya Takasuga,
Keita Iba,
Seiya Nakano,
Jungeun Kim,
Akihiko Fujiwara,
Minoru Nohara
Abstract:
Mineral calaverite AuTe2 is a layered compound with an incommensurately modulated structure. The modulation is characterized by the formation of molecular-like Te2 dimers. We have found that the breaking of Te2 dimers that occurs in Au1-xPtxTe2 results in the emergence of superconductivity at Tc = 4.0 K.
Mineral calaverite AuTe2 is a layered compound with an incommensurately modulated structure. The modulation is characterized by the formation of molecular-like Te2 dimers. We have found that the breaking of Te2 dimers that occurs in Au1-xPtxTe2 results in the emergence of superconductivity at Tc = 4.0 K.
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Submitted 14 May, 2013;
originally announced May 2013.
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Quantum local asymptotic normality based on a new quantum likelihood ratio
Authors:
Koichi Yamagata,
Akio Fujiwara,
Richard D. Gill
Abstract:
We develop a theory of local asymptotic normality in the quantum domain based on a novel quantum analogue of the log-likelihood ratio. This formulation is applicable to any quantum statistical model satisfying a mild smoothness condition. As an application, we prove the asymptotic achievability of the Holevo bound for the local shift parameter.
We develop a theory of local asymptotic normality in the quantum domain based on a novel quantum analogue of the log-likelihood ratio. This formulation is applicable to any quantum statistical model satisfying a mild smoothness condition. As an application, we prove the asymptotic achievability of the Holevo bound for the local shift parameter.
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Submitted 8 November, 2013; v1 submitted 13 October, 2012;
originally announced October 2012.
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Experimental Demonstration of Adaptive Quantum State Estimation
Authors:
Ryo Okamoto,
Minako Iefuji,
Satoshi Oyama,
Koichi Yamagata,
Hiroshi Imai,
Akio Fujiwara,
Shigeki Takeuchi
Abstract:
The first experimental demonstration of an adaptive quantum state estimation (AQSE) is reported. The strong consistency and asymptotic efficiency of AQSE have been mathematically proven [ A. Fujiwara J. Phys. A 39 12489 (2006)]. In this Letter, the angle of linear polarization of single photons, the phase parameter between the right and the left circularly polarization, is estimated using AQSE, an…
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The first experimental demonstration of an adaptive quantum state estimation (AQSE) is reported. The strong consistency and asymptotic efficiency of AQSE have been mathematically proven [ A. Fujiwara J. Phys. A 39 12489 (2006)]. In this Letter, the angle of linear polarization of single photons, the phase parameter between the right and the left circularly polarization, is estimated using AQSE, and the strong consistency and asymptotic efficiency are experimentally verified. AQSE will provide a general useful method in both quantum information processing and metrology.
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Submitted 11 October, 2012;
originally announced October 2012.
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Investigation on synthesis and physical properties of metal doped picene solids
Authors:
Takashi Kambe,
Xuexia He,
Yosuke Takahashi,
Yusuke Yamanari,
Kazuya Teranishi,
Hiroki Mitamura,
Seizi Shibasaki,
Keitaro Tomita,
Ritsuko Eguchi,
Hidenori Goto,
Yasuhiro Takabayashi,
Takashi Kato,
Akihiko Fujiwara,
Toshikaze Kariyado,
Hideo Aoki,
Yoshihiro Kubozono
Abstract:
We report electronic structure and physical properties of metal doped picene as well as selective synthesis of the phase exhibiting 18 K superconducting transition. First, Raman scattering is used to characterize the number of electrons transferred from the dopants to picene molecules. The charge transfer leads to a softening of Raman scattering peaks, which enables us to determine the number of t…
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We report electronic structure and physical properties of metal doped picene as well as selective synthesis of the phase exhibiting 18 K superconducting transition. First, Raman scattering is used to characterize the number of electrons transferred from the dopants to picene molecules. The charge transfer leads to a softening of Raman scattering peaks, which enables us to determine the number of transferred electrons. From this we have identified that three electrons are transferred to each picene molecule in the superconducting doped-picene solids. Second, we report the pressure dependence of Tc in 7 and 18 K phases of K3picene. The 7 K phase shows a negative pressure-dependence, while the 18 K phase exhibits a positive pressure-dependence which cannot be understood with a simple phonon mechanism of BCS superconductivity. Third, we report a new synthesis method for superconducting K3picene by a solution process with monomethylamine, CH3NH2. This method enables one to prepare selectively the K3picene sample exhibiting 18 K superconducting transition. The discovery of suitable way for preparing K3picene with Tc = 18 K may facilitate clarification of the mechanism of superconductivity.
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Submitted 18 December, 2012; v1 submitted 4 October, 2012;
originally announced October 2012.
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Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
Authors:
Ted Thorbeck,
Akira Fujiwara,
Neil M. Zimmerman
Abstract:
Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproducible. We demonstrate in silicon nanowire quantum dots that gate capacitances are reproducible to within 10% for nominally identical devices. We demonstrate the experimentally that gate capacitances scale with device dimen…
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Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproducible. We demonstrate in silicon nanowire quantum dots that gate capacitances are reproducible to within 10% for nominally identical devices. We demonstrate the experimentally that gate capacitances scale with device dimensions. We also demonstrate that a capacitance simulator can be used to predict measured gate capacitances to within 20%. A simple parallel plate capacitor model can be used to predict how the capacitances change with device dimensions; however, the parallel plate capacitor model fails for the smallest devices because the capacitances are dominated by fringing fields. We show how the capacitances due to fringing fields can be quickly estimated.
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Submitted 2 July, 2012;
originally announced July 2012.
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Large array of sub-10 nm single-grain Au nanodots for use in nanotechnology
Authors:
N. Clement,
G. Patriarche,
K. Smaali,
F. Vaurette,
K. Nishiguchi,
D. Troadec,
A. Fujiwara,
D. Vuillaume
Abstract:
A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 layer. These findings are based on physical measurements, such as atomic force microscopy (AFM), atomic resolution scanning transmission electron microsco…
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A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 layer. These findings are based on physical measurements, such as atomic force microscopy (AFM), atomic resolution scanning transmission electron microscopy, and chemical techniques using energy dispersive x-ray spectroscopy. A self-assembled organic monolayer is grafted on the nanodots and characterized chemically with nanometric lateral resolution. We use the extended uniform array of nanodots as a new test-bed for molecular electronics devices.
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Submitted 22 June, 2011;
originally announced June 2011.
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Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel
Authors:
Nicolas Clement,
Katsuhiko Nishiguchi,
Akira Fujiwara,
Dominique Vuillaume
Abstract:
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report an extraction of the capacitance down to 0.55 aF for a silicon FET with a nanoscale wire channel wh…
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An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report an extraction of the capacitance down to 0.55 aF for a silicon FET with a nanoscale wire channel whose width and length are 15 and 50 nm, respectively. The extraction can be achieved by using a combination of four kinds of measurements: current characteristics modulated by double gates, random-telegraph-signal noise induced by trap** and detrap** of a single electron, dielectric polarization noise, and current characteristics showing Coulomb blockade at low temperature. The extraction of such a small gate capacitance enables us to evaluate electron mobility in a nanoscale wire using a classical model of current characteristics of a FET.
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Submitted 21 January, 2011;
originally announced January 2011.
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One-by-one trap activation in silicon nanowire transistors
Authors:
N. Clement,
K. Nishiguchi,
A. Fujiwara,
D. Vuillaume
Abstract:
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trap** and detrap**. However, a deviation from the well-known model of 1/f noise is observed for nanoscale MOSFETs and a new model is required. Here, we report the observation of o…
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Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trap** and detrap**. However, a deviation from the well-known model of 1/f noise is observed for nanoscale MOSFETs and a new model is required. Here, we report the observation of one-by-one trap activation controlled by the gate voltage in a nanowire MOSFET and we propose a new low-frequency-noise theory for nanoscale FETs. We demonstrate that the Coulomb repulsion between electronically charged trap sites avoids the activation of several traps simultaneously. This effect induces a noise reduction by more than one order of magnitude. It decreases when increasing the electron density in the channel due to the electrical screening of traps. These findings are technologically useful for any FETs with a short and narrow channel.
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Submitted 21 October, 2010;
originally announced October 2010.
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A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity
Authors:
N. Clement,
K. Nishiguchi,
J. F. Dufreche,
D. Guerin,
A. Fujiwara,
D. Vuillaume
Abstract:
We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte has a minimal effect on the overall noise. Dielectric polarization noise seems to be at the origin of…
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We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte has a minimal effect on the overall noise. Dielectric polarization noise seems to be at the origin of the 1/f noise in our devices. The estimated spectral density of charge noise Sq = 1.6x10-2 e/sqr(Hz) at 10 Hz opens the door to metrological studies with these SiNW-FETs for the electrical detection of a small number of molecules.
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Submitted 19 October, 2010; v1 submitted 6 October, 2010;
originally announced October 2010.
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Resonant escape over an oscillating barrier in single-electron ratchet transfer
Authors:
Satoru Miyamoto,
Katsuhiko Nishiguchi,
Yukinori Ono,
Kohei M. Itoh,
Akira Fujiwara
Abstract:
Single-electron escape from a metastable state over an oscillating barrier is experimentally investigated in silicon-based ratchet transfer. When the barrier is oscillating on a time scale characteristic of the single-electron escape, synchronization occurs between the deterministic barrier modulation and the stochastic escape events. The average escape time as a function of its oscillation freq…
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Single-electron escape from a metastable state over an oscillating barrier is experimentally investigated in silicon-based ratchet transfer. When the barrier is oscillating on a time scale characteristic of the single-electron escape, synchronization occurs between the deterministic barrier modulation and the stochastic escape events. The average escape time as a function of its oscillation frequency exhibits a minimum providing a primary signature for resonant activation of single electrons.
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Submitted 11 February, 2010;
originally announced February 2010.
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A gate-defined silicon quantum dot molecule
Authors:
H. W. Liu,
T. Fujisawa,
H. Inokawa,
Y. Ono,
A. Fujiwara,
Y. Hirayama
Abstract:
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provid…
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We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations.
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Submitted 2 June, 2008;
originally announced June 2008.
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Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
Authors:
H. W. Liu,
T. Fujisawa,
Y. Ono,
H. Inokawa,
A. Fujiwara,
K. Takashina,
Y. Hirayama
Abstract:
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-potential coupling accounts for inelastic tunneling through the ground states of the two dots. Such transport measurements enable us to observe a Paul…
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We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-potential coupling accounts for inelastic tunneling through the ground states of the two dots. Such transport measurements enable us to observe a Pauli spin blockade due to effective two-electron spin-triplet correlations, evident in a distinct bias-polarity dependence of resonant tunneling through the ground states. The blockade is lifted by the excited-state resonance by virtue of efficient phonon emission between the ground states. Our experiment demonstrates considerable potential for investigating silicon-based spin dynamics and spin-based quantum information processing.
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Submitted 21 February, 2008; v1 submitted 24 July, 2007;
originally announced July 2007.
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Anomalous Resistance Ridges Along Filling Factor $ν= 4i$
Authors:
K. Takashina,
M. Brun,
T. Ota,
D. K. Maude,
A. Fujiwara,
Y. Ono,
Y. Takahashi,
Y. Hirayama
Abstract:
We report anomalous structure in the magnetoresistance of SiO$_2$/Si(100)/SiO$_2$ quantum wells. When Landau levels of opposite valleys are driven through coincidence at the Fermi level, the longitudinal resistance displays elevations at filling factors that are integer multiples of 4 $(ν=4i)$ accompanied by suppression on either side of $ν=4i$. This persists when either magnetic field or valley…
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We report anomalous structure in the magnetoresistance of SiO$_2$/Si(100)/SiO$_2$ quantum wells. When Landau levels of opposite valleys are driven through coincidence at the Fermi level, the longitudinal resistance displays elevations at filling factors that are integer multiples of 4 $(ν=4i)$ accompanied by suppression on either side of $ν=4i$. This persists when either magnetic field or valley splitting is swept leading to resistance ridges running along $ν=4i$. The range of field over which they are observed points to the role of spin degeneracy, which is directly confirmed by their disappearance under in-plane magnetic field. The data suggest a new type of many-body effect due to the combined degeneracy of valley and spin.
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Submitted 21 June, 2007; v1 submitted 27 November, 2006;
originally announced November 2006.
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Valley Polarization in Si(100) at Zero Magnetic Field
Authors:
K. Takashina,
Y. Ono,
A. Fujiwara,
Y. Takahashi,
Y. Hirayama
Abstract:
The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO$_2$/(100)Si/SiO$_2$ quantum well is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and polarized regions. This persists to well above liquid helium temperature and shows no…
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The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO$_2$/(100)Si/SiO$_2$ quantum well is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley-polarization exist in (100) silicon even at zero magnetic field.
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Submitted 2 June, 2006; v1 submitted 5 April, 2006;
originally announced April 2006.
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Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60
Authors:
Kenji Ishii,
Akihiko Fujiwara,
Hiroyoshi Suematsu,
Yoshihiro Kubozono
Abstract:
We have studied crystal structure, magnetism and electric transport properties of a europium fulleride Eu6C60 and its Sr-substituted compounds, Eu6-xSrxC60. They have a bcc structure, which is an isostructure of other M6C60 (M represents an alkali atom or an alkaline earth atom). Magnetic measurements revealed that magnetic moment is ascribed to the divalent europium atom with S = 7/2 spin, and…
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We have studied crystal structure, magnetism and electric transport properties of a europium fulleride Eu6C60 and its Sr-substituted compounds, Eu6-xSrxC60. They have a bcc structure, which is an isostructure of other M6C60 (M represents an alkali atom or an alkaline earth atom). Magnetic measurements revealed that magnetic moment is ascribed to the divalent europium atom with S = 7/2 spin, and a ferromagnetic transition was observed at TC = 10 - 14 K. In Eu6C60, we also confirm the ferromagnetic transition by heat capacity measurement. The striking feature in Eu6-xSrxC60} is very large negative magnetoresistance at low temperature; the resistivity ratio ρ(H = 9 T)/ρ(H = 0 T) reaches almost 10^{-3} at 1 K in Eu6C60. Such large magnetoresistance is the manifestation of a strong pi-f interaction between conduction carriers on C60 and 4f electrons of Eu.
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Submitted 5 February, 2002;
originally announced February 2002.
