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Temperature Dependence of Phonon Energies and Lifetimes in Single- and Few-layered Graphene
Authors:
Markos Poulos,
Konstantinos Papagelis,
Emmenuel N. Koukaras,
George Kalosakas,
Giorgia Fugallo,
Konstantinos Termentzidis
Abstract:
In this work, we have studied the phonon properties of multi-layered graphene with the use of Molecular Dynamics (MD) simulations and the k-space Autocorrelation Sequence (k-VACS) method. We calculate the phonon dispersion curves, densities of states and lifetimes $τ$ of few-layered graphene of 1-5 layers and graphite. $Γ$-point phonon energies and lifetimes are investigated for different temperat…
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In this work, we have studied the phonon properties of multi-layered graphene with the use of Molecular Dynamics (MD) simulations and the k-space Autocorrelation Sequence (k-VACS) method. We calculate the phonon dispersion curves, densities of states and lifetimes $τ$ of few-layered graphene of 1-5 layers and graphite. $Γ$-point phonon energies and lifetimes are investigated for different temperatures ranging from 80 K to 1000 K. The study focuses on the impact of the interlayer interaction and temperature on the energies and lifetimes of the $Γ$-point phonons, as well as the type of interlayer potential used. For the later we used the Kolmogorov-Crespi (KC) and the Lennard-Jones (LJ) potentials. We have found that the number of layers $N$ has little effect on the intra-layer (ZO and G) mode energies and greater effect on the inter-layer (Layer Shearing and Layer Breathing) modes, while $τ$ is generally affected by $N$ for all modes, except for the Layer Shear mode. The trend of $N$ on the lifetimes was also found to independent of the type of potential used. For the Raman-active G phonon, our calculations show that the lifetime increase with $N$ and that this increase is directly connected to the strength of the interlayer coupling and how this is modelled.
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Submitted 27 June, 2024;
originally announced June 2024.
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Hydrodynamic heat transport regime in bismuth: a theoretical viewpoint
Authors:
Maxime Markov,
Jelena Sjakste,
Giuliana Barbarino,
Giorgia Fugallo,
Lorenzo Paulatto,
Michele Lazzeri,
Francesco Mauri,
Nathalie Vast
Abstract:
Bismuth is one of the rare materials in which second sound has been experimentally observed. Our exact calculations of thermal transport with the Boltzmann equation predict the occurrence of this Poiseuille phonon flow between $\approx$ 1.5 K and $\approx$ 3.5 K, in sample size of 3.86 mm and 9.06 mm, in consistency with the experimental observations. Hydrodynamic heat flow characteristics are giv…
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Bismuth is one of the rare materials in which second sound has been experimentally observed. Our exact calculations of thermal transport with the Boltzmann equation predict the occurrence of this Poiseuille phonon flow between $\approx$ 1.5 K and $\approx$ 3.5 K, in sample size of 3.86 mm and 9.06 mm, in consistency with the experimental observations. Hydrodynamic heat flow characteristics are given for any temperature: heat wave propagation length, drift velocity, Knudsen number. We discuss a Gedanken-experiment allowing to assess the presence of a hydrodynamic regime in any bulk material.
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Submitted 12 January, 2018;
originally announced January 2018.
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Advanced capabilities for materials modelling with Quantum ESPRESSO
Authors:
P. Giannozzi,
O. Andreussi,
T. Brumme,
O. Bunau,
M. Buongiorno Nardelli,
M. Calandra,
R. Car,
C. Cavazzoni,
D. Ceresoli,
M. Cococcioni,
N. Colonna,
I. Carnimeo,
A. Dal Corso,
S. de Gironcoli,
P. Delugas,
R. A. DiStasio Jr.,
A. Ferretti,
A. Floris,
G. Fratesi,
G. Fugallo,
R. Gebauer,
U. Gerstmann,
F. Giustino,
T. Gorni,
J. Jia
, et al. (25 additional authors not shown)
Abstract:
Quantum ESPRESSO is an integrated suite of open-source computer codes for quantum simulations of materials using state-of-the art electronic-structure techniques, based on density-functional theory, density-functional perturbation theory, and many-body perturbation theory, within the plane-wave pseudo-potential and projector-augmented-wave approaches. Quantum ESPRESSO owes its popularity to the wi…
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Quantum ESPRESSO is an integrated suite of open-source computer codes for quantum simulations of materials using state-of-the art electronic-structure techniques, based on density-functional theory, density-functional perturbation theory, and many-body perturbation theory, within the plane-wave pseudo-potential and projector-augmented-wave approaches. Quantum ESPRESSO owes its popularity to the wide variety of properties and processes it allows to simulate, to its performance on an increasingly broad array of hardware architectures, and to a community of researchers that rely on its capabilities as a core open-source development platform to implement theirs ideas. In this paper we describe recent extensions and improvements, covering new methodologies and property calculators, improved parallelization, code modularization, and extended interoperability both within the distribution and with external software.
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Submitted 28 September, 2017;
originally announced September 2017.
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Excitons in van der Waals materials: from monolayer to bulk hexagonal boron nitride
Authors:
Jaakko Koskelo,
Giorgia Fugallo,
Mikko Hakala,
Matteo Gatti,
Francesco Sottile,
Pierluigi Cudazzo
Abstract:
We present a general picture of the exciton properties of layered materials in terms of the excitations of their single-layer building blocks. To this end, we derive a model excitonic hamiltonian by drawing an analogy with molecular crystals, which are other prototypical van der Waals materials. We employ this simplified model to analyse in detail the excitation spectrum of hexagonal boron nitride…
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We present a general picture of the exciton properties of layered materials in terms of the excitations of their single-layer building blocks. To this end, we derive a model excitonic hamiltonian by drawing an analogy with molecular crystals, which are other prototypical van der Waals materials. We employ this simplified model to analyse in detail the excitation spectrum of hexagonal boron nitride (hBN) that we have obtained from the {\it ab initio} solution of the many-body Bethe-Salpeter equation as a function of momentum. In this way we identify the character of the lowest-energy excitons in hBN, discuss the effects of the interlayer hop** and the electron-hole exchange interaction on the exciton dispersion, and illustrate the relation between exciton and plasmon excitations in layered materials.
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Submitted 20 December, 2016;
originally announced December 2016.
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Exciton energy-momentum map of hexagonal boron nitride
Authors:
Giorgia Fugallo,
Matteo Aramini,
Jaakko Koskelo,
Kenji Watanabe,
Takashi Taniguchi,
Mikko Hakala,
Simo Huotari,
Matteo Gatti,
Francesco Sottile
Abstract:
Understanding and controlling the way excitons propagate in solids is a key for tailoring materials with improved optoelectronic properties. A fundamental step in this direction is the determination of the exciton energy-momentum dispersion. Here, thanks to the solution of the parameter-free Bethe- Salpeter equation (BSE), we draw and explain the exciton energy-momentum map of hexagonal boron nitr…
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Understanding and controlling the way excitons propagate in solids is a key for tailoring materials with improved optoelectronic properties. A fundamental step in this direction is the determination of the exciton energy-momentum dispersion. Here, thanks to the solution of the parameter-free Bethe- Salpeter equation (BSE), we draw and explain the exciton energy-momentum map of hexagonal boron nitride (h-BN) in the first three Brillouin zones. We show that h-BN displays strong excitonic effects not only in the optical spectra at vanishing momentum $\mathbf{q}$, as previously reported, but also at large $\mathbf{q}$. We validate our theoretical predictions by assessing the calculated exciton map by means of an inelastic x-ray scattering (IXS) experiment. Moreover, we solve the discrepancies between previous experimental data and calculations, proving then that the BSE is highly accurate through the whole momentum range. Therefore, these results put forward the combination BSE and IXS as the tool of choice for addressing the exciton dynamics in complex materials.
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Submitted 7 August, 2015;
originally announced August 2015.
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Ab initio variational approach for evaluating lattice thermal conductivity
Authors:
Giorgia Fugallo,
Michele Lazzeri,
Lorenzo Paulatto,
Francesco Mauri
Abstract:
We present a first-principles theoretical approach for evaluating the lattice thermal conductivity based on the exact solution of the Boltzmann transport equation. We use the variational principle and the conjugate gradient scheme, which provide us with an algorithm faster than the one previously used in literature and able to always converge to the exact solution. Three-phonon normal and umklapp…
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We present a first-principles theoretical approach for evaluating the lattice thermal conductivity based on the exact solution of the Boltzmann transport equation. We use the variational principle and the conjugate gradient scheme, which provide us with an algorithm faster than the one previously used in literature and able to always converge to the exact solution. Three-phonon normal and umklapp collision, isotope scattering and border effects are rigorously treated in the calculation. Good agreement with experimental data for diamond is found. Moreover we show that by growing more enriched diamond samples it is possible to achieve values of thermal conductivity up to three times larger than the commonly observed in isotopically enriched diamond samples with 99.93% C12 and 0.07 C13.
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Submitted 28 June, 2013; v1 submitted 3 December, 2012;
originally announced December 2012.
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Effect of hydrogen on the microstructure evolution of nanocrystalline silicon
Authors:
Giorgia Fugallo,
Alessandro Mattoni,
Luciano Colombo
Abstract:
We investigated the effect of dissolved hydrogen on the microstructure evolution of nanocrystalline silicon. Through molecular dynamics simulations we characterize the local and overall structural features of several hydrogenated samples by the quantitative calculation of their crystallinity. We prove that hydrogen incorporation is detrimental for the recrystallization and accumulates at grain bou…
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We investigated the effect of dissolved hydrogen on the microstructure evolution of nanocrystalline silicon. Through molecular dynamics simulations we characterize the local and overall structural features of several hydrogenated samples by the quantitative calculation of their crystallinity. We prove that hydrogen incorporation is detrimental for the recrystallization and accumulates at grain boundaries, thus increasing their effective area. We further observe the formation of silicon hydrogen complexes at very high hydrogen concentration.
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Submitted 12 November, 2010; v1 submitted 11 November, 2010;
originally announced November 2010.
