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Quantized electron transport through graphene nanoconstrictions
Authors:
V. Clerico,
J. A. Delgado-Notario,
M. Saiz-Bretin,
C. H. Fuentevilla,
A. V. Malyshev,
J. D. Lejarreta,
E. Diez,
F. Dominguez-Adame
Abstract:
We study the quantization of Dirac fermions in lithographically defined graphene nanoconstrictions. We observe quantized conductance in single nanoconstrictions fabricated on top of a thin hexamethyldisilazane layer over a Si/SiO_2 wafer. This nanofabrication method allows us to obtain well defined edges in the nanoconstrictions, thus reducing the effects of edge roughness on the conductance. We p…
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We study the quantization of Dirac fermions in lithographically defined graphene nanoconstrictions. We observe quantized conductance in single nanoconstrictions fabricated on top of a thin hexamethyldisilazane layer over a Si/SiO_2 wafer. This nanofabrication method allows us to obtain well defined edges in the nanoconstrictions, thus reducing the effects of edge roughness on the conductance. We prove the occurrence of ballistic transport and identify several size quantization plateaus in the conductance at low temperature. Experimental data and numerical simulations show good agreement, demonstrating that the smoothing of the plateaus is not related to edge roughness but to quantum interference effects.
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Submitted 27 February, 2018;
originally announced February 2018.
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Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer
Authors:
W. Yu,
V. Clericò,
C. Hernández Fuentevilla,
X. Shi,
Y. Jiang,
D. Saha,
W. K. Lou,
K. Chang,
D. H. Huang,
G. Gumbs,
D. Smirnov,
C. J. Stanton,
Z. Jiang,
V. Bellani,
Y. Meziani,
E. Diez,
W. Pan,
S. D. Hawkins,
J. F. Klem
Abstract:
Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hol…
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Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (~500 kΩ) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature-dependence above T = 7 K and perfect stability against quantizing magnetic fields. By quantitatively comparing our data with early theoretical predictions, we show that such unexpectedly large resistance in our nominally zero-gap semi-metal system is probably due to the formation of an excitonic insulator state.
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Submitted 25 January, 2017;
originally announced January 2017.
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Angle dependent conductance in graphene
Authors:
C. H. Fuentevilla,
J. D. Lejarreta,
C. Cobaleda,
E. Diez
Abstract:
In this paper, we study a theoretical method to calculate the conductance across a square barrier potential in monolayer graphene. We have obtained an analytical expression for the transmission coefficient across a potential barrier for monolayer graphene. Using the transmission coefficient obtained we have an analytical expression for the conductance. This expression will be used to calculate the…
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In this paper, we study a theoretical method to calculate the conductance across a square barrier potential in monolayer graphene. We have obtained an analytical expression for the transmission coefficient across a potential barrier for monolayer graphene. Using the transmission coefficient obtained we have an analytical expression for the conductance. This expression will be used to calculate the conductance in the case in which there is a potential barrier, which in our case will modelise the behaviour of a top gate voltage of a field effect transistor. Once this analysis has been performed we study the scenario in which carriers scatter with the potential barrier with different incidence angles and we have found that for any incident angle an effective gap is induced.
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Submitted 19 February, 2012;
originally announced February 2012.
