Showing 1–16 of 16 results for author: Fromherz, T

All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy

Authors: Johannes Aberl, Enrique Prado Navarrete, Merve Karaman, Diego Haya Enriquez, Christoph Wilflingseder, Andreas Salomon, Daniel Primetzhofer, Markus Andreas Schubert, Giovanni Capellini, Thomas Fromherz, Peter Deák, Péter Udvarhelyi, Li Song, Ádám Gali, Moritz Brehm

Abstract: Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically inn… ▽ More Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically innovative creation method for various SiCCs, solely relying on epitaxial growth of Si and C-doped Si at atypically-low temperatures in a ultra-clean growth environment. These telecom emitters can be confined within sub-1nm thick layers embedded at arbitrary vertical positions within a highly crystalline Si matrix. Tuning growth conditions and do**, different SiCC types, e.g., W-centers, T-centers, G-centers, or derivatives like G'-centers can be created, which are particularly promising as Si-based single-photon sources and spin-photon interfaces. The zero-phonon emission from G'-centers can be conveniently tuned by the C-concentration, leading to a systematic wavelength shift and linewidth narrowing towards low emitter densities. △ Less

Submitted 21 May, 2024; v1 submitted 29 February, 2024; originally announced February 2024.

Single SiGe Quantum Dot Emission Deterministically Enhanced in a High-Q Photonic Crystal Resonator

Authors: Thanavorn Poempool, Johannes Aberl, Marco Clementi, Lukas Spindlberger, Lada Vukušić, Matteo Galli, Dario Gerace, Frank Fournel, Jean-Michel Hartmann, Friedrich Schäffler, Moritz Brehm, Thomas Fromherz

Abstract: We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable method. By optimizing our molecular beam epitaxy (MBE) growth technique, we were able to reduce the amount of Ge within the whole resonator to obtain an ab… ▽ More We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable method. By optimizing our molecular beam epitaxy (MBE) growth technique, we were able to reduce the amount of Ge within the whole resonator to obtain an absolute minimum of exactly one QD, accurately positioned by lithographic methods relative to the PhCR, and an otherwise flat, a few monolayer thin, Ge wetting layer (WL). With this method, record quality (Q) factors for QD-loaded PhCRs up to $Q\sim 10^5$ are achieved. A comparison with control PhCRs on samples containing a WL but no QDs is presented, as well as a detailed analysis of the dependence of the resonator-coupled emission on temperature, excitation intensity, and emission decay after pulsed excitation. Our findings undoubtedly confirm a single QD in the center of the resonator as a potentially novel photon source in the telecom spectral range. △ Less

Submitted 20 April, 2022; originally announced April 2022.

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

Authors: Jeffrey Schuster, Johannes Aberl, Lada Vukušić, Lukas Spindlberger, Heiko Groiss, Thomas Fromherz, Moritz Brehm, Friedrich Schäffler

Abstract: The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs.… ▽ More The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs. The strain induced by the respective lower QD creates a preferential nucleation site for the upper one and strains the upper QD as well as the Si cap above it. Electrons are confined in the strain pockets in the Si cap, which leads to an enhanced wave function overlap with the heavy holes near the upper QD's apex. With a thickness of the Si spacer between the stacked QDs below 5 nm, we separated the functions of the two QDs: The role of the lower one is that of a pure stressor, whereas only the upper QD facilitates radiative recombination of QD-bound excitons. We report on the design and strain engineering of the QD pairs via strain-dependent Schrödinger-Poisson simulations, their implementation by molecular beam epitaxy, and a comprehensive study of their structural and optical properties in comparison with those of single-layer SiGe QD arrays. We find that the double QD arrangement shifts the thermal quenching of the photoluminescence signal at higher temperatures. Moreover, detrimental light emission from the QD-related wetting layers is suppressed in the double-QD configuration. △ Less

Submitted 27 October, 2021; originally announced October 2021.

Journal ref: Scientific Reports volume 11, Article number: 20597 (2021)

Selective tuning of optical modes in a silicon comb-like photonic crystal cavity

Authors: Marco Clementi, Andrea Barone, Thomas Fromherz, Dario Gerace, Matteo Galli

Abstract: Realizing multiply resonant photonic crystal cavities with large free spectral range is key to achieve integrated devices with highly efficient nonlinear response, such as frequency conversion, four-wave mixing, and parametric oscillation. This task is typically difficult owing to the cavity modes' sensitivity to fabrication disorder, which makes it hard to reliably achieve a comb-like spectrum of… ▽ More Realizing multiply resonant photonic crystal cavities with large free spectral range is key to achieve integrated devices with highly efficient nonlinear response, such as frequency conversion, four-wave mixing, and parametric oscillation. This task is typically difficult owing to the cavity modes' sensitivity to fabrication disorder, which makes it hard to reliably achieve a comb-like spectrum of equally spaced modes even when a perfect matching is theoretically predicted. Here we show that a comb-like spectrum of up to 8 modes with very high quality factor and diffraction limited volumes can be engineered in the bichromatic-type potential of a two-dimensional photonic crystal cavity fabricated in a thin silicon membrane. To cope with the tight tolerance in terms of frequency spacings and resonance linewidths, we develop a permanent post-processing technique that allows the selective tuning of individual confined modes, thus achieving an almost perfect frequency matching of high Q resonances with record finesse in silicon microresonators. Our experimental results are extremely promising in view of ultra-low power nonlinear photonics in silicon. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: Nanophotonics, 9(1), 205-210 (2019)

Resolving the temporal evolution of line broadening in quantum emitters

Authors: Christian Schimpf, Marcus Reindl, Petr Klenovský, Thomas Fromherz, Saimon F. Covre Da Silva, Julian Hofer, Christian Schneider, Sven Höfling, Rinaldo Trotta, Armando Rastelli

Abstract: Light emission from solid-state quantum emitters is inherently prone to environmental decoherence, which results in an inhomogeneous line broadening and in the deterioration of photon indistinguishability. Here we employ photon correlation Fourier spectroscopy (PCFS) to study the temporal evolution of such a broadening for the biexciton and exciton emission in resonantly driven GaAs quantum dots.… ▽ More Light emission from solid-state quantum emitters is inherently prone to environmental decoherence, which results in an inhomogeneous line broadening and in the deterioration of photon indistinguishability. Here we employ photon correlation Fourier spectroscopy (PCFS) to study the temporal evolution of such a broadening for the biexciton and exciton emission in resonantly driven GaAs quantum dots. Differently from previous experiments, the time scales we probe range from a few nanoseconds to milliseconds and, simultaneously, the spectral resolution we achieve can be as small as 2 $μ$eV. We find pronounced differences in the temporal evolution of the two lines, which we attribute to differences in their homogeneous linewidth and sensitivity to charge noise. We then analyze the effect of irradiation with additional white light, which reduces blinking at the cost of enhanced charge noise. Due to its robustness against experimental imperfections and its high temporal resolution and bandwidth, PCFS outperforms established spectroscopy techniques, such as Michelson interferometry. We discuss its practical implementation, its limitations, and the possibility to use it to estimate the indistinguishability of consecutively emitted single photons for applications in quantum communication and photonic-based quantum information processing. △ Less

Submitted 1 October, 2019; v1 submitted 29 March, 2019; originally announced March 2019.

Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

Authors: L. Spindlberger, A. Csóré, G. Thiering, S. Putz, R. Karhu, J. Ul Hassan, N. T. Son, T. Fromherz, A. Gali, M. Trupke

Abstract: We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and ab initio density functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. We con… ▽ More We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and ab initio density functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. We conclude with a brief outlook on applications in quantum photonics. △ Less

Submitted 7 February, 2019; v1 submitted 16 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Applied 12, 014015 (2019)

Effect of second order piezoelectricity on excitonic structure of stress-tuned InGaAs/GaAs quantum dots

Authors: Petr Klenovský, Petr Steindl, Johannes Aberl, Eugenio Zallo, Rinaldo Trotta, Armando Rastelli, Thomas Fromherz

Abstract: We study the effects of the nonlinear piezoelectricity and the In distribution on the exciton energy, the electron-hole electric dipole moment, and the fine-structure splitting in stress-tunable InGaAs/GaAs quantum dots integrated onto a piezoelectric actuator. In particular, we investigate in detail the contributions of various elements of the expansion of the electrical polarization in terms of… ▽ More We study the effects of the nonlinear piezoelectricity and the In distribution on the exciton energy, the electron-hole electric dipole moment, and the fine-structure splitting in stress-tunable InGaAs/GaAs quantum dots integrated onto a piezoelectric actuator. In particular, we investigate in detail the contributions of various elements of the expansion of the electrical polarization in terms of externally induced elastic strain on the latter two important quantum dot properties. Based on the comparison of the effects of first- and second-order piezoelectricity we provide a simple relation to estimate the influence of applied anisotropic stress on the quantum dot dipole moment for quantum dots significantly lattice mismatched to the host crystal. △ Less

Submitted 10 October, 2018; v1 submitted 17 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. B 97, 245314 (2018)

Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect

Authors: Johannes Aberl, Petr Klenovský, Johannes S. Wildmann, Javier Martín-Sánchez, Thomas Fromherz, Eugenio Zallo, Josef Humlíček, Armando Rastelli, Rinaldo Trotta

Abstract: We show that anisotropic biaxial stress can be used to tune the built-in dipole moment of excitons confined in In(Ga)As quantum dots up to complete erasure of its magnitude and inversion of its sign. We demonstrate that this phenomenon is due to piezoelectricity. We present a model to calculate the applied stress, taking advantage of the so-called piezotronic effect, which produces significant cha… ▽ More We show that anisotropic biaxial stress can be used to tune the built-in dipole moment of excitons confined in In(Ga)As quantum dots up to complete erasure of its magnitude and inversion of its sign. We demonstrate that this phenomenon is due to piezoelectricity. We present a model to calculate the applied stress, taking advantage of the so-called piezotronic effect, which produces significant changes in the current-voltage characteristics of the strained diode-membranes containing the quantum dots. Finally, self-consistent k.p calculations reveal that the experimental findings can be only accounted for by the nonlinear piezoelectric effect, whose importance in quantum dot physics has been theoretically recognized although it has proven difficult to single out experimentally. △ Less

Submitted 7 August, 2017; v1 submitted 27 February, 2017; originally announced February 2017.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 96, 045414 (2017)

Realization of high-Q/V bichromatic photonic crystal cavities defined by an effective Aubry-André-Harper potential

Authors: A. Simbula, M. Schatzl, L. Zagaglia, F. Alpeggiani, L. C. Andreani, F. Schäffler, T. Fromherz, M. Galli, D. Gerace

Abstract: We report on the design, fabrication and optical characterization of bichromatic photonic crystal cavities in thin silicon membranes, with resonances around 1550 nm wavelength. The cavity designs are based on a recently proposed photonic crystal implementation of the Aubry-André-Harper bichromatic potential, which relies on the superposition of two one-dimensional lattices with non-integer ratio b… ▽ More We report on the design, fabrication and optical characterization of bichromatic photonic crystal cavities in thin silicon membranes, with resonances around 1550 nm wavelength. The cavity designs are based on a recently proposed photonic crystal implementation of the Aubry-André-Harper bichromatic potential, which relies on the superposition of two one-dimensional lattices with non-integer ratio between the periodicity constants. In photonic crystal nanocavities, this confinement mechanism is such that optimized figures of merit can be straightforwardly achieved, in particular an ultra-high-Q factor and diffraction-limited mode volume. Several silicon membrane photonic crystal nanocavities with Q-factors in the 1 million range have been realized, as evidenced by resonant scattering. The generality of these designs and their easy implementation and scalability make these results particularly interesting for realizing highly performing photonic nanocavities on different materials platforms and operational wavelengths. △ Less

Submitted 2 December, 2016; originally announced December 2016.

Comments: submitted

Journal ref: APL Photonics 2, 056102 (2017)

Local Density-of-States Map** in Photonic Crystal Resonators by Deterministically Positioned Germanium Quantum Dots

Authors: Magdalena Schatzl, Florian Hackl, Martin Glaser, Moritz Brehm, Patrick Rauter, Angelica Simbula, Matteo Galli, Thomas Fromherz, Friedrich Schäffler

Abstract: We report on map** of the local density of states in L3 photonic crystal resonators (PCR) via deterministically positioned single Ge quantum dots (QDs). Perfect site-control of Ge QDs on pre-patterned silicon-on-insulator substrates was exploited to fabricate in one processing run almost 300 L3 PCRs containing single QDs in systematically varying positions in the cavities. The alignment precisio… ▽ More We report on map** of the local density of states in L3 photonic crystal resonators (PCR) via deterministically positioned single Ge quantum dots (QDs). Perfect site-control of Ge QDs on pre-patterned silicon-on-insulator substrates was exploited to fabricate in one processing run almost 300 L3 PCRs containing single QDs in systematically varying positions in the cavities. The alignment precision of the QD emitters was better than 20 nm. This type of parallel processing is essentially based on standard Si device technologies and is therefore scalable to any number and configuration of PCR structures. As a first demonstrator, we probed the coupling efficiency of a single Ge QD to the L3 cavity modes as a function of their spatial overlap. The results are in very good agreement with finite-difference time-domain simulations. △ Less

Submitted 4 August, 2016; v1 submitted 22 July, 2016; originally announced July 2016.

Comments: 9 pages, 6 figures

Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si

Authors: M. Grydlik, F. Hackl, H. Groiss, M. Glaser, A. Halilovic, T. Fromherz, W. Jantsch, F. Schäffler, M. Brehm

Abstract: Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a… ▽ More Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a fully coherent Si matrix show extraordinary optical properties if partially amorphised by Ge-ion bombardment (GIB). The GIB-QDs exhibit a quasi-direct-band gap and show, in contrast to conventional SiGe nanostructures, almost no thermal quenching of the photoluminescence (PL) up to room-temperature (RT). Microdisk resonators with embedded GIB-QDs exhibit threshold-behaviour and super-linear increase of the integrated PL-intensity (IPL) with increasing excitation power Pexc which indicates light amplification by stimulated emission in a fully SIT-compatible group-IV nano-system. △ Less

Submitted 13 May, 2015; originally announced May 2015.

Journal ref: ACS Photonics 3, 298-303 (2016)

CMOS-compatible graphene photodetector covering all optical communication bands

Authors: Andreas Pospischil, Markus Humer, Marco M. Furchi, Dominic Bachmann, Romain Guider, Thomas Fromherz, Thomas Mueller

Abstract: Optical interconnects are becoming attractive alternatives to electrical wiring in intra- and inter-chip communication links. Particularly, the integration with silicon complementary metal-oxide-semiconductor (CMOS) technology has received considerable interest due to the ability of cost-effective integration of electronics and optics on a single chip. While silicon enables the realization of opti… ▽ More Optical interconnects are becoming attractive alternatives to electrical wiring in intra- and inter-chip communication links. Particularly, the integration with silicon complementary metal-oxide-semiconductor (CMOS) technology has received considerable interest due to the ability of cost-effective integration of electronics and optics on a single chip. While silicon enables the realization of optical waveguides and passive components, the integration of another, optically absorbing, material is required for photodetection. Germanium or compound semiconductors are traditionally used for this purpose; their integration with silicon technology, however, faces major challenges. Recently, graphene has emerged as a viable alternative for optoelectronic applications, including photodetection. Here, we demonstrate an ultra-wideband CMOS-compatible photodetector based on graphene. We achieve multi-gigahertz operation over all fiber-optic telecommunication bands, beyond the wavelength range of strained germanium photodetectors, whose responsivity is limited by their bandgap. Our work complements the recent demonstration of a CMOS-integrated graphene electro-optical modulator, paving the way for carbon-based optical interconnects. △ Less

Submitted 16 September, 2013; v1 submitted 15 February, 2013; originally announced February 2013.

Comments: 18 pages, 4 figures. Nature Photonics, 2013

Spontaneous emission enhancement from polymer-embedded colloidal PbS nanocrystals into Si-based photonics at telecom wavelengths

Authors: Markus Humer, Romain Guider, Wolfgang Jantsch, Thomas Fromherz

Abstract: We experimentally demonstrate the coupling of optically excited PbS nanocrystal (NC) photoluminescence (PL) into Si-based ring resonators and waveguides at 300K. The PbS NCs are dissolved into Novolak polymer at various concentrations and applied by drop-casting. The coupling mechanism and the spontaneous emission enhancement are experimentally investigated and compared to theoretical predictions.… ▽ More We experimentally demonstrate the coupling of optically excited PbS nanocrystal (NC) photoluminescence (PL) into Si-based ring resonators and waveguides at 300K. The PbS NCs are dissolved into Novolak polymer at various concentrations and applied by drop-casting. The coupling mechanism and the spontaneous emission enhancement are experimentally investigated and compared to theoretical predictions. Quality (Q) factors of 2500 were obtained in emission and transmission for wavelengths centered around 1.45μm. PL intensity shows a linear dependence on the excitation power and no degradation of the Q factors. Devices with stable optical properties are obtained by this versatile technique. △ Less

Submitted 26 January, 2013; v1 submitted 22 January, 2013; originally announced January 2013.

Comments: 17 pages, 4 figures

Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

Authors: P. Klenovský, M. Brehm, V. Křápek, E. Lausecker, D. Munzar, F. Hackl, H. Steiner, T. Fromherz, G. Bauer, J. Humlíček

Abstract: The pum** intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized due to the strain field in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attri… ▽ More The pum** intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized due to the strain field in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear I dependence of the PL intensity. At approximately I>3W/cm^2, additional bands with a nearly quadratic I dependence appear in the PL spectra, resulting from biexcitonic transitions. These emerging PL contributions shift the composite no-phonon PL band of the SiGe quantum dots to higher energies. The experimentally obtained energies of the no-phonon transitions are in good agreement with the exciton and biexciton energies calculated using the envelope function approximation and the configuration interaction method. △ Less

Submitted 27 September, 2012; originally announced September 2012.

Journal ref: Physical Review B 86, 115305 (2012)

Intra-valence-band mixing in strain-compensated SiGe quantum wells

Authors: S. Tsu**o, A. Borak, C. Falub, T. Fromherz, L. Diehl, H. Sigg, D. Gruetzmacher

Abstract: We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and barriers, the intersubband transitions energies from the ground state to the excited heavy hole (hh), light hole (lh) and split-off hole (so) states are resolved to ~… ▽ More We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and barriers, the intersubband transitions energies from the ground state to the excited heavy hole (hh), light hole (lh) and split-off hole (so) states are resolved to ~0.5 eV. When hh2 is within ~30 meV of lh1 or so1 a partial transfer of the hh1-hh2 oscillator strength to the hh1-lh1 or hh1-so1 transitions is observed, which is otherwise forbidden for light polarized perpendicular to the plane of the wells. This is a clear sign of mixing between the hh and lh or so-states. A large temperature induced broadening of hh2 peak is observed for narrow wells indicating a non-parabolic dispersion of the hh2 states due to the mixing with the lh/so continuum. We found that the 6-band k.p theory gives a quantitative account of the observations. A possible role of many-body effects in the temperatureinduced negative peak shift is discussed. △ Less

Submitted 13 May, 2005; originally announced May 2005.

Comments: 16 pages, 3 figures

IV-VI resonant cavity enhanced photodetectors for the midinfrared

Authors: M. Boeberl, T. Fromherz, T. Schwarzl, G. Springholz, W. Heiss

Abstract: A resonant-cavity enhanced detector operating in the mid-infrared at a wavelength around 3.6 micron is demonstrated. The device is based on a narrow-gap lead salt heterostructure grown by molecular beam epitaxy. Below 140 K, the photovoltage clearly shows a single narrow cavity resonance, with a relative line width of only 2 % at 80 K. A resonant-cavity enhanced detector operating in the mid-infrared at a wavelength around 3.6 micron is demonstrated. The device is based on a narrow-gap lead salt heterostructure grown by molecular beam epitaxy. Below 140 K, the photovoltage clearly shows a single narrow cavity resonance, with a relative line width of only 2 % at 80 K. △ Less

Submitted 7 September, 2004; originally announced September 2004.

Comments: 2 figures

Journal ref: Semicond. Sci. Technol. 19 (2004) L115-L117