Showing 1–50 of 51 results for author: Frisenda, R

Strongly anisotropic strain-tunability of excitons in exfoliated ZrSe$_3$

Authors: Hao Li, Gabriel Sanchez-Santolino, Sergio Puebla, Riccardo Frisenda, Abdullah M. Al-Enizi, Ayman Nafady, Roberto D'Agosta, Andres Castellanos-Gomez

Abstract: We study the effect of uniaxial strain on the band structure of ZrSe$_3$, a semiconducting material with a marked in-plane structural anisotropy. By using a modified 3-point bending test apparatus, thin ZrSe$_3$ flakes were subjected to uniaxial strain along different crystalline orientations monitoring the effect of strain on their optical properties through micro-reflectance spectroscopy. The ob… ▽ More We study the effect of uniaxial strain on the band structure of ZrSe$_3$, a semiconducting material with a marked in-plane structural anisotropy. By using a modified 3-point bending test apparatus, thin ZrSe$_3$ flakes were subjected to uniaxial strain along different crystalline orientations monitoring the effect of strain on their optical properties through micro-reflectance spectroscopy. The obtained spectra showed excitonic features that blueshift upon uniaxial tension. This shift is strongly dependent on the direction along which the strain is being applied. When the flakes are strained along the b-axis, the exciton peak shifts at ~ 60-95 meV/%, while along the a-axis, the shift only reaches ~ 0-15 meV/%. Ab initio calculations were conducted to study the influence of uniaxial strain, applied along different crystal directions, on the band structure and reflectance spectra of ZrSe$_3$, exhibiting a remarkable agreement with the experimental results. △ Less

Submitted 17 October, 2022; originally announced October 2022.

Journal ref: Advanced Materials 2022, 34(1) 2103571

An automated system for strain engineering and straintronics of 2D materials

Authors: Onur Çakıroğlu, Joshua O. Island, Yong Xie, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: This work presents an automated three-point bending apparatus that can be used to study strain engineering and straintronics in two-dimensional materials. We benchmark the system by reporting reproducible strain tuned micro-reflectance, Raman, and photoluminescence spectra for monolayer molybdenum disulfide (MoS2). These results are in good agreement with reported literature using conventional ben… ▽ More This work presents an automated three-point bending apparatus that can be used to study strain engineering and straintronics in two-dimensional materials. We benchmark the system by reporting reproducible strain tuned micro-reflectance, Raman, and photoluminescence spectra for monolayer molybdenum disulfide (MoS2). These results are in good agreement with reported literature using conventional bending apparatus. We further utilize the system to automate strain investigations of straintronic devices by measuring the piezoresistive effect and the strain effect on photoresponse in an MoS2 electrical device. The details of the construction of the straightforward system are given and we anticipate it can be easily implemented for study of strain engineering and straintronics in a wide variety of 2D material systems. △ Less

Submitted 17 October, 2022; originally announced October 2022.

Broadband-tunable spectral response of perovskite-on-paper photodetectors using halide mixing

Authors: Alvaro J. Magdaleno, Riccardo Frisenda, Ferry Prins, Andres Castellanos-Gomez

Abstract: Paper offers a low-cost and widely available substrate for electronics. It posses alternative characteristics to silicon, as it shows low density and high-flexibility, together with biodegradability. Solution processable materials, such as hybrid perovskites, also present light and flexible features, together with a huge tunability of the material composition with varying optical properties. In th… ▽ More Paper offers a low-cost and widely available substrate for electronics. It posses alternative characteristics to silicon, as it shows low density and high-flexibility, together with biodegradability. Solution processable materials, such as hybrid perovskites, also present light and flexible features, together with a huge tunability of the material composition with varying optical properties. In this study, we combine paper substrates with halide-mixed perovskites for the creation of low-cost and easy-to-fabricate perovskite-on-paper photodetectors with a broadband-tunable spectral response. From the bandgap tunability of halide-mixed perovskites we create photodetectors with a cut-off spectral onset that ranges from the NIR to the green, by increasing the bromide content on MAPb(I$_{1-x}$Br$_x$)$_3$ perovskite alloys. The devices show a fast and efficient response. The best performances are observed for the pure I and Br perovskite compositions, with a maximum responsivity of 376 mA/W on the MAPbBr$_3$ device. This study provides an example of the wide range of possibilities that the combination of solution processable materials with paper substrates offer for the development of low-cost, biodegradable and easy-to-fabricate devices. △ Less

Submitted 19 May, 2022; originally announced May 2022.

Comments: 3 main text figures, 8 supp info figures

In-plane anisotropic optical and mechanical properties of two-dimensional MoO$_3$

Authors: Sergio Puebla, Roberto D'Agosta, Gabriel Sanchez-Santolino, Riccardo Frisenda, Carmen Munuera, Andres Castellanos-Gomez

Abstract: Molybdenum trioxide (MoO$_3$) in-plane anisotropy has increasingly attracted the attention of the scientific community in the last few years. Many of the observed in-plane anisotropic properties stem from the anisotropic refractive index and elastic constants of the material but a comprehensive analysis of these fundamental properties is still lacking. Here we employ Raman and micro-reflectance me… ▽ More Molybdenum trioxide (MoO$_3$) in-plane anisotropy has increasingly attracted the attention of the scientific community in the last few years. Many of the observed in-plane anisotropic properties stem from the anisotropic refractive index and elastic constants of the material but a comprehensive analysis of these fundamental properties is still lacking. Here we employ Raman and micro-reflectance measurements, using polarized light, to determine the angular dependence of the refractive index of thin MoO$_3$ flakes and we study the directional dependence of the MoO$_3$ Young's modulus using the buckling metrology method. We found that MoO$_3$ displays one of the largest in-plane anisotropic mechanical properties reported for 2D materials so far. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Comments: 4 figures in main text. 6 figures in supp. info

Journal ref: npj 2D Mater Appl 5, 37 (2021)

Optical microscopy-based thickness estimation in thin GaSe flakes

Authors: Wenliang Zhang, Qinghua Zhao, Sergio Puebla, Tao Wang, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: We have implemented three different optical methods to quantitatively assess the thickness of thin GaSe flakes transferred on both transparent substrates, like Gel-Film, or SiO2/Si substrates. We show how their apparent color can be an efficient way to make a quick rough estimation of the thickness of the flakes. This method is more effective for SiO2/Si substrates as the thickness dependent color… ▽ More We have implemented three different optical methods to quantitatively assess the thickness of thin GaSe flakes transferred on both transparent substrates, like Gel-Film, or SiO2/Si substrates. We show how their apparent color can be an efficient way to make a quick rough estimation of the thickness of the flakes. This method is more effective for SiO2/Si substrates as the thickness dependent color change is more pronounced on these substrates than on transparent substrates. On the other hand, for transparent substrates, the transmittance of the flakes in the blue region of the visible spectrum can be used to estimate the thickness. We find that the transmittance of flakes in the blue part of the spectrum decreases at a rate of 1.2%/nm. On SiO2/Si, the thickness of the flakes can be accurately determined by fitting optical contrast spectra to a Fresnel law-based model. Finally, we also show how the quantitative analysis of transmission mode optical microscopy images can be a powerful method to quickly probe the environmental degradation of GaSe flakes exposed to aging conditions. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Comments: 5 figures

Journal ref: Materials Today Advances, 10, 100143, 2021

Integrating superconducting van der Waals materials on paper substrates

Authors: Jon Azpeitia, Riccardo Frisenda, Martin Lee, Damian Bouwmeester, Wenliang Zhang, Federico Mompean, Herre S. J. van der Zant, Mar García-Hernández, Andres Castellanos-Gomez

Abstract: Paper has the potential to dramatically reduce the cost of electronic components. In fact, paper is 10 000 times cheaper than crystalline silicon, motivating the research to integrate electronic materials on paper substrates. Among the different electronic materials, van der Waals materials are attracting the interest of the scientific community working on paper-based electronics because of the co… ▽ More Paper has the potential to dramatically reduce the cost of electronic components. In fact, paper is 10 000 times cheaper than crystalline silicon, motivating the research to integrate electronic materials on paper substrates. Among the different electronic materials, van der Waals materials are attracting the interest of the scientific community working on paper-based electronics because of the combination of high electrical performance and mechanical flexibility. Up to now, different methods have been developed to pattern conducting, semiconducting and insulating van der Waals materials on paper but the integration of superconductors remains elusive. Here, the deposition of NbSe2, an illustrative van der Waals superconductor, on standard copy paper is demonstrated. The deposited NbSe2 films on paper display superconducting properties (e.g. observation of Meissner effect and resistance drop to zero-resistance state when cooled down below its critical temperature) similar to those of bulk NbSe2. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Comments: 6 figures in main text, 8 figures in Supp. Info

Integrating van der Waals materials on paper substrates for electrical and optical applications

Authors: Wenliang Zhang, Qinghua Zhao, Carmen Munuera, Martin Lee, Eduardo Flores, João E. F. Rodrigues, Jose R. Ares, Carlos Sanchez, Javier Gainza, Herre S. J. van der Zant, José A. Alonso, Isabel J. Ferrer, Tao Wang, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: Paper holds the promise to replace silicon substrates in applications like internet of things or disposable electronics that require ultra-low-cost electronic components and an environmentally friendly electronic waste management. In the last years, spurred by the abovementioned properties of paper as a substrate and the exceptional electronic, mechanical and optical properties of van der Waals (v… ▽ More Paper holds the promise to replace silicon substrates in applications like internet of things or disposable electronics that require ultra-low-cost electronic components and an environmentally friendly electronic waste management. In the last years, spurred by the abovementioned properties of paper as a substrate and the exceptional electronic, mechanical and optical properties of van der Waals (vdW) materials, many research groups have worked towards the integration of vdW materials-based devices on paper. Recently, a method to deposit a continuous film of densely packed interconnects of vdW materials on paper by simply rubbing the vdW crystals against the rough surface of paper has been presented. This method utilizes the weak interlayer vdW interactions and allows cleaving of the crystals into micro platelets through the abrasion against the paper. Here, we aim to illustrate the general character and the potential of this technique by fabricating films of 39 different vdW materials (including superconductors, semi-metals, semiconductors, and insulators) on standard copier paper. We have thoroughly characterized their optical properties showing their high optical quality: one can easily resolve the absorption band edge of semiconducting vdW materials and even the excitonic features present in some vdW materials with high exciton binding energy. We also measured the electrical resistivity for several vdW materials films on paper finding exceptionally low values, which are in some cases, orders of magnitude lower than those reported for analogous films produced by inkjet printing. We finally demonstrate the fabrication of field-effect devices with vdW materials on paper using the paper substrate as an ionic gate. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Comments: 4 figures in main text, 21 figures in Supp. Info

Journal ref: Applied Materials Today, 23, 101012, 2021

Biaxial versus uniaxial strain tuning of single-layer MoS$_2$

Authors: Felix Carrascoso, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of two-dimensional semiconductors like molybdenum disulfide (MoS2). Although several theoretical works predicted that biaxial strain would be more effective than uniaxial strain to tune the band structure of MoS2, a direct experimental verification is still missing in the literature. Here we impleme… ▽ More Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of two-dimensional semiconductors like molybdenum disulfide (MoS2). Although several theoretical works predicted that biaxial strain would be more effective than uniaxial strain to tune the band structure of MoS2, a direct experimental verification is still missing in the literature. Here we implemented a simple experimental setup that allows to apply biaxial strain through the bending of a cruciform polymer substrate. We used the setup to study the effect of biaxial strain on the differential reflectance spectra of 12 single-layer MoS2 flakes finding a redshift of the excitonic features at a rate between -40 meV/% and -110 meV/% of biaxial tension. We also directly compare the effect of biaxial and uniaxial strain on the same single-layer MoS2 finding that the biaxial strain gauge factor is 2.3 times larger than the uniaxial strain one. △ Less

Submitted 7 May, 2021; v1 submitted 21 December, 2020; originally announced December 2020.

Comments: 5 figures + 1 table in the main text. 6 figures in the supp. info

Drawing WS2 thermal sensors on paper substrates

Authors: Martin Lee, Ali Mazaheri, Herre S. J. van der Zant, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: Paper based thermoresistive sensors are fabricated by rubbing WS2 powder against a piece of standard copier paper, like the way a pencil is used to write on paper. The abrasion between the layered material and the rough paper surface erodes the material, breaking the weak van der Waals interlayer bonds, yielding a film of interconnected platelets. The resistance of WS2 presents a strong temperatur… ▽ More Paper based thermoresistive sensors are fabricated by rubbing WS2 powder against a piece of standard copier paper, like the way a pencil is used to write on paper. The abrasion between the layered material and the rough paper surface erodes the material, breaking the weak van der Waals interlayer bonds, yielding a film of interconnected platelets. The resistance of WS2 presents a strong temperature dependence, as expected for a semiconductor material in which charge transport is due to thermally activated carriers. This strong temperature dependence makes the paper supported WS2 devices extremely sensitive to small changes in temperature. This exquisite thermal sensitivity, and their fast response times to sudden temperature changes, is exploited thereby demonstrating the usability of a WS2-on-paper thermal sensor in a respiration monitoring device. △ Less

Submitted 24 October, 2020; originally announced October 2020.

Comments: 6 main text figures, 1 table, 6 supp. info. figures

Naturally occurring van der Waals materials

Authors: Riccardo Frisenda, Yue Niu, Patricia Gant, Manuel Muñoz, Andres Castellanos-Gomez

Abstract: The exfoliation of two naturally occurring van der Waals minerals, graphite and molybdenite, arouse an unprecedented level of interest by the scientific community and shaped a whole new field of research: 2D materials research. Several years later, the family of van der Waals materials that can be exfoliated to isolate 2D materials keeps growing, but most of them are synthetic. Interestingly, in n… ▽ More The exfoliation of two naturally occurring van der Waals minerals, graphite and molybdenite, arouse an unprecedented level of interest by the scientific community and shaped a whole new field of research: 2D materials research. Several years later, the family of van der Waals materials that can be exfoliated to isolate 2D materials keeps growing, but most of them are synthetic. Interestingly, in nature plenty of naturally occurring van der Waals minerals can be found with a wide range of chemical compositions and crystal structures whose properties are mostly unexplored so far. This Perspective aims to provide an overview of different families of van der Waals minerals to stimulate their exploration in the 2D limit. △ Less

Submitted 24 October, 2020; originally announced October 2020.

Comments: Perspective article. 34 pages, 10 figures, 1 table, more than 170 references

Journal ref: npj 2D Mater Appl 4, 38 (2020)

Superlattices based on van der Waals 2D materials

Authors: Yu Kyoung Ryu, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: Two-dimensional (2D) materials exhibit a number of improved mechanical, optical, electronic properties compared to their bulk counterparts. The absence of dangling bonds in the cleaved surfaces of these materials allows combining different 2D materials into van der Waals heterostructures to fabricate p-n junctions, photodetectors, 2D-2D ohmic contacts that show unexpected performances. These intri… ▽ More Two-dimensional (2D) materials exhibit a number of improved mechanical, optical, electronic properties compared to their bulk counterparts. The absence of dangling bonds in the cleaved surfaces of these materials allows combining different 2D materials into van der Waals heterostructures to fabricate p-n junctions, photodetectors, 2D-2D ohmic contacts that show unexpected performances. These intriguing results are regularly summarized in comprehensive reviews. A strategy to tailor their properties even further and to observe novel quantum phenomena consists in the fabrication of superlattices whose unit cell is formed either by two dissimilar 2D materials or by a 2D material subjected to a periodical perturbation, each component contributing with different characteristics. Furthermore, in a 2D materials-based superlattice, the interlayer interaction between the layers mediated by van der Waals forces constitutes a key parameter to tune the global properties of the superlattice. The above-mentioned factors reflect the potential to devise countless combinations of van der Waals 2D materials based superlattices. In the present feature article, we explain in detail the state-of-the-art of 2D materials-based superlattices and we describe the different methods to fabricate them, classified as vertical stacking, intercalation with atoms or molecules, moiré patterning, strain engineering and lithographic design. We also aim to highlight some of the specific applications for each type of superlattices. △ Less

Submitted 22 September, 2020; originally announced September 2020.

Comments: Perspective article. 6 Figures. 133 references

Journal ref: Chemical Communications (2019) ,55, 11498-11510

Thickness identification of thin InSe by optical microscopy methods

Authors: Qinghua Zhao, Sergio Puebla, Wenliang Zhang, Tao Wang, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: Indium selenide (InSe), as a novel van der Waals layered semiconductor, has attracted a large research interest thanks to its excellent optical and electrical properties in the ultra-thin limit. Here, we discuss four different optical methods to quantitatively identify the thickness of thin InSe flakes on various substrates, such as SiO2/Si or transparent polymeric substrates. In the case of thin… ▽ More Indium selenide (InSe), as a novel van der Waals layered semiconductor, has attracted a large research interest thanks to its excellent optical and electrical properties in the ultra-thin limit. Here, we discuss four different optical methods to quantitatively identify the thickness of thin InSe flakes on various substrates, such as SiO2/Si or transparent polymeric substrates. In the case of thin InSe deposited on a transparent substrate, the transmittance of the flake in the blue region of the visible spectrum can be used to estimate the thickness. For InSe supported by SiO2/Si, the thickness of the flakes can be estimated either by assessing their apparent colors or accurately analyzed using a Fresnel-law based fitting model of the optical contrast spectra. Finally, we also studied the thickness dependency of the InSe photoluminescence emission energy, which provides an additional tool to estimate the InSe thickness and it works both for InSe deposited on SiO2/Si and on a transparent polymeric substrate. △ Less

Submitted 22 September, 2020; originally announced September 2020.

Comments: 4 figures

Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain

Authors: Qinghua Zhao, Tao Wang, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: The ultrathin nature and dangling bonds free surface of two-dimensional (2D) semiconductors allow for significant modifications of their band gap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong band gap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effec… ▽ More The ultrathin nature and dangling bonds free surface of two-dimensional (2D) semiconductors allow for significant modifications of their band gap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong band gap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effective strain transfer from the substrate to the thin InSe is confirmed by Raman spectroscopy. The band gap change upon biaxial strain is determined through photoluminescence measurements, finding a gauge factor of up to ~200 meV/%. We further characterize the effect of biaxial strain on the electrical properties of the InSe devices. In the dark state, a large increase of the current is observed upon applied strain which gives a piezoresistive gauge factor value of ~450-1000, ~5-12 times larger than that of other 2D materials and of state-of-the-art silicon strain gauges. Moreover, the biaxial strain tuning of the InSe band gap also translates in a strain-induced redshift of the spectral response of our InSe photodetectors with ΔEcut-off ~173 meV at a rate of ~360 meV/% of strain, indicating a strong strain tunability of the spectral bandwidth of the photodetectors. △ Less

Submitted 22 September, 2020; originally announced September 2020.

Comments: 5 main text figures, 1 table comparing the strain tunable bandgap for different 2Ds and 11 supporting information figures

InSe Schottky diodes based on van der Waals contacts

Authors: Qinghua Zhao, Wanqi Jie, Tao Wang, Andres Castellanos-Gomez, Riccardo Frisenda

Abstract: Two-dimensional semiconductors are excellent candidates for next-generation electronics and optoelec-tronics thanks to their electrical properties and strong light-matter interaction. To fabricate devices with optimal electrical properties, it is crucial to have both high-quality semiconducting crystals and ideal con-tacts at metal-semiconductor interfaces. Thanks to the mechanical exfoliation of… ▽ More Two-dimensional semiconductors are excellent candidates for next-generation electronics and optoelec-tronics thanks to their electrical properties and strong light-matter interaction. To fabricate devices with optimal electrical properties, it is crucial to have both high-quality semiconducting crystals and ideal con-tacts at metal-semiconductor interfaces. Thanks to the mechanical exfoliation of van der Waals crystals, atomically-thin high-quality single-crystals can easily be obtained in a laboratory. However, conventional metal deposition techniques can introduce chemical disorder and metal-induced mid-gap states that induce Fermi level pinning and can degrade the metal-semiconductor interfaces, resulting in poorly performing devices. In this article, we explore the electrical contact characteristics of Au-InSe and graphite-InSe van der Waals contacts, obtained by stacking mechanically exfoliated InSe flakes onto pre-patterned Au or graphite electrodes without the need of lithography or metal deposition. The high quality of the metal-semiconductor interfaces obtained by van der Waals contact allows to fabricate high-quality Schottky di-odes based on the Au-InSe Schottky barrier. Our experimental observation indicates that the contact barrier at the graphite-InSe interface is negligible due to the similar electron affinity of InSe and graphite, while the Au-InSe interfaces are dominated by a large Schottky barrier. △ Less

Submitted 29 July, 2020; originally announced July 2020.

Comments: 25 pages, 13 figures, Main text and Supporting Information

Journal ref: Advanced Functional Materials, 30, 2001307 (2020)

The role of traps in the photocurrent generation mechanism in thin In-Se photodetectors

Authors: Qinghua Zhao, Wei Wang, Felix Carrascoso-Plana, Wanqi Jie, Tao Wang, Andres Castellanos-Gomez, Riccardo Frisenda

Abstract: Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials. However, the mechanism behind the photocurrent generation in thin InSe photodetectors remains elusive. Here, we present a set of experiments aimed at explaining the strong scattering in the photoresponsivity v… ▽ More Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials. However, the mechanism behind the photocurrent generation in thin InSe photodetectors remains elusive. Here, we present a set of experiments aimed at explaining the strong scattering in the photoresponsivity values reported in the literature for thin InSe photodetectors. By performing optoelectronic measurements on thin InSe-based photodetectors operated under different environmental conditions we find that the photoresponsivity, the response time and the photocurrent power dependency are strongly correlated in this material. This observation indicates that the photogating effect plays an imporant role for thin InSe flakes, and it is the dominant mechanism in the ultra-high photoresponsivity of pristine InSe devices. In addition, when exposing the pristine InSe photodetectors to the ambient environment we observe a fast and irreversible change in the photoresponse, with a decrease in the photoresponsivity accompanied by an increase of the operating speed. We attribute this photodetector performance change (upon atmospheric exposure) to the decrease in the density of the traps present in InSe, due to the passivation of selenium vacancies by atmospheric oxygen species. This passivation is accompanied by a downward shift of the InSe Fermi level and by a decrease of the Fermi level pinning, which leads to an increase of the Schottky barrier between Au and InSe. Our study reveals the important role of traps induced by defects in tailoring the properties of devices based on 2D materials and offers a controllable route to design and functionalize thin InSe photodetectors to realize devices with either ultrahigh photoresposivity or fast operation speed. △ Less

Submitted 29 July, 2020; originally announced July 2020.

Comments: 27 pages, 12 figures, Main text and Supporting Information

Journal ref: Materials Horizons, 7, 262-258 (2019)

Direct transformation of crystalline MoO$_3$ into few-layers MoS$_2$

Authors: Felix Carrascoso, Gabriel Sanchez-Santolino, Chun-wei Hsu, Norbert M. Nemes, Almudena Torres-Pardo, Patricia Gant, Federico J. Mompeán, Kourosh Kalantar-zadeh, José A. Alonso, Mar García-Hernández, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: We fabricate large-area atomically thin MoS$_2$ layers through the direct transformation of crystalline molybdenum MoS$_2$ (MoO$_3$) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300x300 um$^2$ with 2-4 layers in thickness and show a marked p-type behaviour. The synthesized films are characte… ▽ More We fabricate large-area atomically thin MoS$_2$ layers through the direct transformation of crystalline molybdenum MoS$_2$ (MoO$_3$) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300x300 um$^2$ with 2-4 layers in thickness and show a marked p-type behaviour. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Comments: 6 figures in main text, 2 figures in supp. info

Journal ref: Materials, 13(10), 2293, 2020

Tunable Photodetectors via in situ Thermal Conversion of TiS$_3$ to TiO$_2$

Authors: Foad Ghasemi, Riccardo Frisenda, Eduardo Flores, Nikos Papadopoulos, Robert Biele, David Perez de Lara, Herre S. J. van der Zant, Kenji Watanabe, Takashi Taniguchi, Roberto D'Agosta, Jose R. Ares, Carlos Sánchez, Isabel J. Ferrer, Andres Castellanos-Gomez

Abstract: In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semi… ▽ More In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semiconductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS$_3$ in air above 300 °C gradually converts it into TiO$_2$, a semiconductor with a wide bandgap of 3.2 eV with ap-plications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS$_3$ nanoribbons and its influence on the optoelectronic properties of TiS$_3$-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS$_3$ devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO$_{2-x}$S$_x$) when increasing the amount of oxygen and reducing the amount of sulfur. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Comments: 7 figures in main text, 9 figures in supp. info

Journal ref: Nanomaterials, 10(4), 711, 2020

A system to test 2D optoelectronic devices in high vacuum

Authors: Qinghua Zhao, Felix Carrascoso, Patricia Gant, Tao Wang, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: The exploration of electronic and optoelectronic properties of two-dimensional (2D) materials has become one of the most attractive line of research since the isolation of graphene. Such 'all-surface materials' present a strong sensitivity to environmental conditions and thus characterization of the devices based on these materials usually requires measurement systems operating in high-vacuum. How… ▽ More The exploration of electronic and optoelectronic properties of two-dimensional (2D) materials has become one of the most attractive line of research since the isolation of graphene. Such 'all-surface materials' present a strong sensitivity to environmental conditions and thus characterization of the devices based on these materials usually requires measurement systems operating in high-vacuum. However, conventional optoelectronic probe-station testing systems are are not compatible with high vacuum operation and vacuum-compatible versions are rather expensive. Here, we present a high-vacuum system specifically designed to test electronic and optoelectronic devices based on 2D materials. This system can be implemented with low budget and it is mostly based on the assembly of commercially available standard vacuum and optic components. Despite the simplicity of this system we demonstrate full capabilities to characterize optoelectronic devices in a broad range of wavelengths with fast pum**/venting speed and possibility of modulating the device temperature (room temperature to ~150deg). △ Less

Submitted 11 June, 2020; originally announced June 2020.

Comments: Tables including all the part-numbers to replicate the setup are provided

Journal ref: J. Phys. Mater. 3 036001 (2020)

Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2

Authors: Felix Carrascoso, Hao Li, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high ac… ▽ More Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Comments: 4 main text figures, 5 tables, 18 figures in the supporting information

Journal ref: Nano Research, volume 14, pages 1698-1703 (2021)

Microheater actuators as a versatile platform for strain engineering in 2D materials

Authors: Yu Kyoung Ryu, Felix Carrascoso, Rubén López-Nebreda, Nicolás Agraït, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This contro… ▽ More We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This controlled biaxial expansion can be transduced to biaxial strain to 2D materials, placed onto the polymer surface, which in turn induces a shift of the optical spectrum. Our thermal strain actuators can reach a maximum biaxial strain of 0.64 % and they can be modulated at frequencies up to 8 Hz. The compact geometry of these actuators results in a negligible spatial drift of 0.03 um/deg, which facilitates their integration in optical spectroscopy measurements. We illustrate the potential of this strain engineering platform to fabricate a strain-actuated optical modulator with single-layer MoS2. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Comments: 5 main text figures + 5 supp. info. figures

MoS$_2$-on-paper optoelectronics: drawing photodetectors with van der Waals semiconductors beyond graphite

Authors: Ali Mazaheri, Martin Lee, Herre S. J. van der Zant, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS2) crystal onto a piece of paper, similarly to the action of drawing/writing with a pencil on paper. We show that the abrasion between the MoS2 crystal and the paper substrate efficiently exfoliates the crystals, breaking the weak van der Waals interlayer bonds and leading to the deposition of a film… ▽ More We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS2) crystal onto a piece of paper, similarly to the action of drawing/writing with a pencil on paper. We show that the abrasion between the MoS2 crystal and the paper substrate efficiently exfoliates the crystals, breaking the weak van der Waals interlayer bonds and leading to the deposition of a film of interconnected MoS2 platelets. Employing this simple method, that can be easily extended to other 2D materials, we fabricate MoS2-on-paper broadband photodectectors with spectral sensitivity from the ultraviolet (UV) to the near-infrared (NIR). We also used these paper-based photodetectors to acquire pictures of objects by mounting the photodetectors in a homebuilt single-pixel camera setup. △ Less

Submitted 11 June, 2020; v1 submitted 3 May, 2020; originally announced May 2020.

Comments: 6 main text figures + 4 Supp Info figures

A system for the deterministic transfer of 2D materials under inert environmental conditions

Authors: Patricia Gant, Felix Carrascoso, Qinghua Zhao, Yu Kyoung Ryu, Michael Seitz, Ferry Prins, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: The isolation of air-sensitive two-dimensional (2D) materials and the race to achieve a better control of the interfaces in van der Waals heterostructures has pushed the scientific community towards the development of experimental setups that allow to exfoliate and transfer 2D materials under inert atmospheric conditions. These systems are typically based on over pressurized N2 of Ar gloveboxes th… ▽ More The isolation of air-sensitive two-dimensional (2D) materials and the race to achieve a better control of the interfaces in van der Waals heterostructures has pushed the scientific community towards the development of experimental setups that allow to exfoliate and transfer 2D materials under inert atmospheric conditions. These systems are typically based on over pressurized N2 of Ar gloveboxes that require the use of very thick gloves to operate within the chamber or the implementation of several motorized micro-manipulators. Here, we set up a deterministic transfer system for 2D materials within a gloveless anaerobic chamber. Unlike other setups based on over-pressurized gloveboxes, in our system the operator can manipulate the 2D materials within the chamber with bare hands. This experimental setup allows us to exfoliate 2D materials and to deterministically place them at a desired location with accuracy in a controlled O2-free and very low humidity (<2% RH) atmosphere. We illustrate the potential of this system to work with air-sensitive 2D materials by comparing the stability of black phosphorus and perovskite flakes inside and outside the anaerobic chamber. △ Less

Submitted 14 February, 2020; originally announced March 2020.

Comments: 6 main text figures, 7 supp. info. figures. 1 main text table with all the part numbers needed to assemble the setup

Journal ref: 2D Mater. 7 025034 (2020)

InSe: a two-dimensional semiconductor with superior flexibility

Authors: Qinghua Zhao, Riccardo Frisenda, Tao Wang, Andres Castellanos-Gomez

Abstract: Two-dimensional Indium Selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young's modulus of thin InSe (~1-2 laye… ▽ More Two-dimensional Indium Selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young's modulus of thin InSe (~1-2 layers to ~40 layers) flakes experimentally by using buckling-based methodology. We find that the Young's modulus has a value of 23.1 +- 5.2 GPa, one of the lowest values reported up to date for crystalline two-dimensional materials. This superior flexibility can be very attractive for different applications, such as strain engineering and flexible electronics. △ Less

Submitted 1 March, 2020; originally announced March 2020.

Comments: 3 figures, 1 table

Journal ref: Nanoscale, 2019,11, 9845-9850

An inexpensive system for the deterministic transfer of 2D materials

Authors: Qinghua Zhao, Tao Wang, Yu Kyoung Ryu, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: The development of systems for the deterministic transfer of two-dimensional (2D) materials have undoubtedly contributed to a great advance in the 2D materials research. In fact, they have made it possible to fabricate van der Waals heterostructures and 2D materials-based devices with complex architectures. Nonetheless, as far as we know, the amount of papers in the literature providing enough det… ▽ More The development of systems for the deterministic transfer of two-dimensional (2D) materials have undoubtedly contributed to a great advance in the 2D materials research. In fact, they have made it possible to fabricate van der Waals heterostructures and 2D materials-based devices with complex architectures. Nonetheless, as far as we know, the amount of papers in the literature providing enough details to reproduce these systems by other research groups is very scarce in the literature. Moreover, these systems typically require the use of expensive optical and mechanical components hampering their applicability in research groups with low budget. Here we demonstrate how a deterministic placement system for 2D materials set up with full capabilities can be implemented under 900 Eur which can be easily implemented in low budget labs and educational labs. △ Less

Submitted 14 February, 2020; originally announced February 2020.

Comments: 4 Figures in main text, a full step-by-step assembly guide in the supp. info. all part numbers needed to assemble the setup included

Journal ref: J. Phys. Mater. 3 016001 (2020)

Symmetry breakdown in franckeite: spontaneous strain, rippling and interlayer moiré

Authors: Riccardo Frisenda, Gabriel Sanchez-Santolino, Nikos Papadopoulos, Joanna Urban, Michal Baranowski, Alessandro Surrente, Duncan K. Maude, Mar Garcia-Hernandez, Herre S. J. van der Zant, Paulina Plochocka, Pablo San-Jose, Andres Castellanos-Gomez

Abstract: Franckeite is a naturally occurring layered mineral with a structure composed of alternating stacks of SnS2-like and PbS-like layers. Although this superlattice is composed of a sequence of isotropic two-dimensional layers, it exhibits a spontaneous rippling that makes the material structurally anisotropic. We demonstrate that this rippling comes hand in hand with an inhomogeneous in-plane strain… ▽ More Franckeite is a naturally occurring layered mineral with a structure composed of alternating stacks of SnS2-like and PbS-like layers. Although this superlattice is composed of a sequence of isotropic two-dimensional layers, it exhibits a spontaneous rippling that makes the material structurally anisotropic. We demonstrate that this rippling comes hand in hand with an inhomogeneous in-plane strain profile and anisotropic electrical, vibrational and optical properties. We argue that this symmetry breakdown results from a spatial modulation of the van der Waals interaction between layers due to the SnS2-like and PbS-like lattices incommensurability. △ Less

Submitted 11 June, 2020; v1 submitted 11 August, 2019; originally announced August 2019.

Comments: 6 main text figures, Supp. Info. available upon request

Journal ref: Nano Letters 20, 1141-1147 (2020)

Biaxial strain tuning of interlayer excitons in bilayer MoS2

Authors: Felix Carrascoso, Der-Yuh Lin, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: We show how the excitonic features of biaxial MoS2 flakes are very sensitive to biaxial strain. We find a lower bound for the gauge factors of the A exciton and B exciton of (-41 +- 2) meV/% and (-45 +- 2) meV/% respectively, which are larger than those found for single-layer MoS2. Interestingly, the interlayer exciton feature also shifts upon biaxial strain but with a gauge factor that is systema… ▽ More We show how the excitonic features of biaxial MoS2 flakes are very sensitive to biaxial strain. We find a lower bound for the gauge factors of the A exciton and B exciton of (-41 +- 2) meV/% and (-45 +- 2) meV/% respectively, which are larger than those found for single-layer MoS2. Interestingly, the interlayer exciton feature also shifts upon biaxial strain but with a gauge factor that is systematically larger than that found for the A exciton, (-48 +- 4) meV/%. We attribute this larger gauge factor for the interlayer exciton to the strain tunable van der Waals interaction due to the Poisson effect (the interlayer distance changes upon biaxial strain). △ Less

Submitted 11 June, 2020; v1 submitted 8 August, 2019; originally announced August 2019.

Comments: 3 figures in the main text, 14 figures in the Supp. Info

Journal ref: J. Phys. Mater. 3 015003 (2020)

Anisotropic buckling of few-layer black phosphorus

Authors: Luis Vaquero-Garzon, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: When a two-dimensional material, adhered onto a compliant substrate, is subjected to compression it can undertake a buckling instability yielding to a periodic rippling. Interestingly, when black phosphorus flakes are compressed along the zig-zag crystal direction the flake buckles forming ripples with a 40% longer period than that obtained when the compression is applied along the armchair direct… ▽ More When a two-dimensional material, adhered onto a compliant substrate, is subjected to compression it can undertake a buckling instability yielding to a periodic rippling. Interestingly, when black phosphorus flakes are compressed along the zig-zag crystal direction the flake buckles forming ripples with a 40% longer period than that obtained when the compression is applied along the armchair direction. This anisotropic buckling stems from the puckered honeycomb crystal structure of black phosphorus and a quantitative analysis of the ripple period allows us to determine the Youngs's modulus of few-layer black phosphorus along the armchair direction (EbP_AC = 35.1 +- 6.3 GPa) and the zig-zag direction (EbP_ZZ = 93.3 +- 21.8 GPa). △ Less

Submitted 17 July, 2019; originally announced July 2019.

Comments: 4 figures + 1 table in main text, 4 supp. info. figures. Available Open Access at publisher's webpage

Journal ref: Nanoscale, 2019,11, 12080-12086

Thickness determination of MoS2, MoSe2, WS2 and WSe2 on transparent stamps used for deterministic transfer of 2D materials

Authors: Najme S. Taghavi, Patricia Gant, Peng Huang, Iris Niehues, Robert Schmidt, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch, Mar García-Hernández, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: Here, we propose a method to determine the thickness of the most common transition metal dichalcogenides (TMDCs) placed on the surface of transparent stamps, used for the deterministic placement of two-dimensional materials, by analyzing the red, green and blue channels of transmission-mode optical microscopy images of the samples. In particular, the blue channel transmittance shows a large and mo… ▽ More Here, we propose a method to determine the thickness of the most common transition metal dichalcogenides (TMDCs) placed on the surface of transparent stamps, used for the deterministic placement of two-dimensional materials, by analyzing the red, green and blue channels of transmission-mode optical microscopy images of the samples. In particular, the blue channel transmittance shows a large and monotonic thickness dependence, making it a very convenient probe of the flake thickness. The method proved to be robust given the small flake-to-flake variation and the insensitivity to do** changes of MoS2. We also tested the method for MoSe2, WS2 and WSe2. These results provide a reference guide to identify the number of layers of this family of materials on transparent substrates only using optical microscopy. △ Less

Submitted 17 July, 2019; originally announced July 2019.

Comments: 4 figures in main text, 2 figures in supp. info

Journal ref: Nano Research (2019) 12:1691

Mechanical and liquid phase exfoliation of cylindrite: a natural van der Waals superlattice with intrinsic magnetic interactions

Authors: Yue Niu, Julia Villalva, Riccardo Frisenda, Gabriel Sanchez-Santolino, Luisa Ruiz-González, Emilio M. Pérez, Mar García-Hernández, Enrique Burzurí, Andres Castellanos-Gomez

Abstract: We report the isolation of thin flakes of cylindrite, a naturally occurring van der Waals superlattice, by means of mechanical and liquid phase exfoliation. We find that this material is a heavily doped p-type semiconductor with a narrow gap (<0.85 eV) with intrinsic magnetic interactions that are preserved even in the exfoliated nanosheets. Due to its environmental stability and high electrical c… ▽ More We report the isolation of thin flakes of cylindrite, a naturally occurring van der Waals superlattice, by means of mechanical and liquid phase exfoliation. We find that this material is a heavily doped p-type semiconductor with a narrow gap (<0.85 eV) with intrinsic magnetic interactions that are preserved even in the exfoliated nanosheets. Due to its environmental stability and high electrical conductivity, cylindrite can be an interesting alternative to the existing two-dimensional magnetic materials. △ Less

Submitted 17 July, 2019; originally announced July 2019.

Comments: 5 figures in main text, 1 supp. info. figure. Available open access at the publisher's web

Journal ref: 2D Materials (2019) 6 035023

Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction

Authors: Yue Niu, Riccardo Frisenda, Eduardo Flores, Jose R. Ares, Weicheng Jiao, David Perez de Lara, Carlos Sanchez, Rongguo Wang, Isabel J. Ferrer, Andres Castellanos-Gomez

Abstract: The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic two-dimensional materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here we demonstrate the fabrication of a monolithic polarization sensitive broadband photodetector base… ▽ More The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic two-dimensional materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here we demonstrate the fabrication of a monolithic polarization sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p-n junction. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350 % and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization sensitive systems such as polarimeters. △ Less

Submitted 22 September, 2020; v1 submitted 27 March, 2019; originally announced March 2019.

Comments: 6 main text figures, 1 figure. Includes the supporting information (18 supp. info. figures)

Journal ref: Advanced Optical Materials, 2018, vol. 6, no 19, p. 1800351

Revisiting the buckling metrology method to determine the Young's modulus of 2D materials

Authors: Nestor Iguiñiz, Riccardo Frisenda, Rudolf Bratschitsch, Andres Castellanos-Gomez

Abstract: Measuring the mechanical properties of two-dimensional materials is a formidable task. While regular electrical and optical probing techniques are suitable even for atomically thin materials, conventional mechanical tests cannot be directly applied. Therefore, new mechanical testing techniques need to be developed. Up to now, the most widespread approaches require micro-fabrication to create freel… ▽ More Measuring the mechanical properties of two-dimensional materials is a formidable task. While regular electrical and optical probing techniques are suitable even for atomically thin materials, conventional mechanical tests cannot be directly applied. Therefore, new mechanical testing techniques need to be developed. Up to now, the most widespread approaches require micro-fabrication to create freely suspended membranes, rendering their implementation complex and costly. Here, we revisit a simple yet powerful technique to measure the mechanical properties of thin films. The buckling metrology method, that does not require the fabrication of freely suspended structures, is used to determine the Young's modulus of several transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) with thicknesses ranging from 3 to 10 layers. We critically compare the obtained values for the Young's modulus and their uncertainty, finding that this simple technique provides results, which are in good agreement with those reported using other highly sophisticated testing methods. By comparing the cost, complexity and time required for the different methods reported in the literature, the buckling metrology method presents certain advantages that makes it an interesting mechanical test tool for 2D materials. △ Less

Submitted 17 July, 2019; v1 submitted 7 February, 2019; originally announced February 2019.

Comments: Main text: 3 figures, 2 tables. Supp Info: 11 figures, 2 tables. This is an author's version (post peer-review)

Journal ref: Advanced Materials, 2019, 31(10):1807150

A strain tunable single-layer MoS2 photodetector

Authors: Patricia Gant, Peng Huang, David Pérez de Lara, Dan Guo, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can be also used to modify the characteristics of devices based on them. In this work, w… ▽ More Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can be also used to modify the characteristics of devices based on them. In this work, we study flexible and transparent photodetectors based on single-layer MoS2 under the application of biaxial strain. We find that by controlling the level of strain, we can tune the photoresponsivity (by 2-3 orders of magnitude), the response time (from <80 ms to 1.5 s) and the spectral bandwidth (with a gauge factor of 135 meV/% or 58 nm/%) of the device. △ Less

Submitted 17 July, 2019; v1 submitted 7 February, 2019; originally announced February 2019.

Comments: 3 main text figures and 12 supporting information figures

Towards Air Stability of Ultra-Thin GaSe Devices: Avoiding Environmental and Laser-Induced Degradation by Encapsulation

Authors: Qinghua Zhao, Riccardo Frisenda, Patricia Gant, David Perez de Lara, Carmen Munuera, Mar Garcia-Hernandez, Yue Niu, Tao Wang, Wanqi Jie, Andres Castellanos-Gomez

Abstract: Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical non-linearity. Nonetheless, few-layer GaSe is not stable under ambient conditions and it tends to degrade over time. Here we combine atomic force microscopy, Raman spectro… ▽ More Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical non-linearity. Nonetheless, few-layer GaSe is not stable under ambient conditions and it tends to degrade over time. Here we combine atomic force microscopy, Raman spectroscopy and optoelectronic measurements in photodetectors based on thin GaSe to study its long-term stability. We found that the GaSe flakes exposed to air tend to decompose forming firstly amorphous selenium and Ga2Se3 and subsequently Ga2O3. While the first stage is accompanied by an increase in photocurrent, in the second stage we observe a decrease in photocurrent which leads to the final failure of GaSe photodetectors. Additionally, we found that the encapsulation of the GaSe photodetectors with hexagonal boron nitride (h-BN) can protect the GaSe from degradation and can help to achieve long-term stability of the devices. △ Less

Submitted 15 October, 2018; originally announced October 2018.

Comments: 23 pages, 5 figures, supporting information

Journal ref: Advanced Functional Materials, (2018) 1805304

Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite

Authors: Patricia Gant, Foad Ghasemi, David Maeso, Carmen Munuera, Elena López-Elvira, Riccardo Frisenda, David Pérez De Lara, Gabino Rubio-Bollinger, Mar Garcia-Hernandez, Andres Castellanos-Gomez

Abstract: We study mechanically exfoliated nanosheets of franckeite by quantitative optical microscopy. The analysis of transmission mode and epi-illumination mode optical microscopy images provides a rapid method to estimate the thickness of the exfoliated flakes at first glance. A quantitative analysis of the optical contrast spectra by means of micro-reflectance allows one to determine the refractive ind… ▽ More We study mechanically exfoliated nanosheets of franckeite by quantitative optical microscopy. The analysis of transmission mode and epi-illumination mode optical microscopy images provides a rapid method to estimate the thickness of the exfoliated flakes at first glance. A quantitative analysis of the optical contrast spectra by means of micro-reflectance allows one to determine the refractive index of franckeite in a broad range of the visible spectrum through a fit of the acquired spectra to a Fresnel law based model. △ Less

Submitted 11 October, 2018; originally announced October 2018.

Comments: Main text (6 figures) + Supp. Info. (6 figures)

Journal ref: Beilstein J Nanotechnol. 2017; 8: 2357-2362

Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2

Authors: Yue Niu, Sergio Gonzalez-Abad, Riccardo Frisenda, Philipp Marauhn, Matthias Drüppel, Patricia Gant, Robert Schmidt, Najme S. Taghavi, David Barcons, Aday J. Molina-Mendoza, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch, David Perez De Lara, Michael Rohlfing, Andres Castellanos-Gomez

Abstract: The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semicond… ▽ More The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS2, MoSe2, WS2, and WSe2, with thickness ranging from one layer up to six layers. We analyzed the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provided a route to employ differential reflectance spectroscopy for determining the number of layers of MoS2, MoSe2, WS2, and WSe2. △ Less

Submitted 10 October, 2018; originally announced October 2018.

Comments: Main text (3 Figures) and Supp. Info. (23 Figures)

Journal ref: Nanomaterials 2018, 8(9), 725

Large birefringence and linear dichroism in TiS3 nanosheets

Authors: Nikos Papadopoulos, Riccardo Frisenda, Robert Biele, Eduardo Flores, Jose R. Ares, Carlos Sanchez, Herre S. J. van der Zant, Isabel J. Ferrer, Roberto D'Agosta, Andres Castellanos-Gomez

Abstract: TiS3 nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS3 is appealing for the fabrication of polarization sensitive optoelectronic devices. Herein, we study the optical contrast of TiS3 nanosheets of variable thickness on SiO2/Si substr… ▽ More TiS3 nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS3 is appealing for the fabrication of polarization sensitive optoelectronic devices. Herein, we study the optical contrast of TiS3 nanosheets of variable thickness on SiO2/Si substrates, from which we obtain the complex refractive index in the visible spectrum. We find that TiS3 exhibits very large birefringence, larger than that of well-known strong birefringent materials like TiO2 or calcite, and linear dichroism. These findings are in qualitative agreement with ab initio calculations that suggest an excitonic origin for the birefringence and linear dichroism of the material. △ Less

Submitted 24 September, 2020; v1 submitted 1 October, 2018; originally announced October 2018.

Journal ref: Nanoscale, 2018,10, 12424-12429 (2018)

Atomically thin p-n junctions based on two-dimensional materials

Authors: Riccardo Frisenda, Aday J Molina-Mendoza, Thomas Mueller, Andres Castellanos-Gomez, Herre SJ van der Zant

Abstract: Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p-n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p-… ▽ More Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p-n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p-n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p-n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p-n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p-n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field. △ Less

Submitted 11 September, 2018; originally announced September 2018.

Comments: Review, 34 pages, 11 figures, 4 tables

Journal ref: Chemical Society Reviews 47 (2018) 3339-3358

Biaxial strain in atomically thin transition metal dichalcogenides

Authors: Riccardo Frisenda, Robert Schmidt, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch, David Perez de Lara, Andres Castellanos-Gomez

Abstract: Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we study transition metal dichalcogenides monolayers deposited on polymeric substrates under the application of biaxial strain, both tensile and compressive. We can control the amount… ▽ More Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we study transition metal dichalcogenides monolayers deposited on polymeric substrates under the application of biaxial strain, both tensile and compressive. We can control the amount of biaxial strain applied by letting the substrate thermally expand or compress by changing the substrate temperature. After modelling the substrate-dependent strain transfer process with a finite elements simulation, we performed micro-differential spectroscopy of four transition metal dichalcogenides monolayers (MoS2, MoSe2, WS2, WSe2) under the application of biaxial strain and measured their optical properties. For tensile strain we observe a redshift of the bandgap that reaches a value as large as 94 meV/% in the case of single-layer WS2 deposited on polypropylene. The observed bandgap shifts as a function of substrate extension/compression follow the order WS2 > WSe2 > MoS2 > MoSe2. △ Less

Submitted 30 April, 2018; originally announced April 2018.

Comments: 13 pages, 5 figures

Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials

Authors: Riccardo Frisenda, Efrén Navarro-Moratalla, Patricia Gant, David Pérez De Lara, Pablo Jarillo-Herrero, Roman V. Gorbachev, Andres Castellanos-Gomez

Abstract: Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate comp… ▽ More Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate complex devices, which would be otherwise very difficult to achieve by conventional bottom-up nanofabrication approaches, and to fabricate fully-encapsulated devices with exquisite electronic properties. The integration of 2D materials with existing technologies such as photonic and superconducting waveguides and fiber optics is another exciting possibility. Here, we review the state-of-the-art of the deterministic placement methods, describing and comparing the different alternative methods available in the literature and we illustrate their potential to fabricate van der Waals heterostructures, to integrate 2D materials into complex devices and to fabricate artificial bilayer structures where the layers present a user-defined rotational twisting angle. △ Less

Submitted 15 November, 2017; originally announced December 2017.

Comments: Tutorial Review, 13 figures. Authors' pre-peer review version of the article

Characterization of highly crystalline lead iodide nanosheets prepared by room-temperature solution processing

Authors: Riccardo Frisenda, Joshua O. Island, Jose L. Lado, Emerson Giovanelli, Patricia Gant, Philipp Nagler, Sebastian Bange, John M. Lupton, Christian Schüller, Aday Molina-Mendoza, Lucia Aballe, Michael Foerster, Tobias Korn, Miguel Angel Niño, David Perez de Lara, Emilio M. Pérez, Joaquín Fernandéz-Rossier, Andres Castellanos-Gomez

Abstract: Two-dimensional semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of two-dimensional materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum,… ▽ More Two-dimensional semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of two-dimensional materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum, has been known for a long time and has been well characterized in its bulk form. Nevertheless, studies of this material in the nanometer thickness regime are rather scarce. In this article we demonstrate an easy way to synthesize ultrathin, highly crystalline flakes of PbI2 by precipitation from a solution in water. We thoroughly characterize the produced thin flakes with different techniques ranging from optical and Raman spectros-copy to temperature-dependent photoluminescence and electron microscopy. We compare the results to ab initio calculations of the band structure of the material. Finally, we fabricate photodetectors based on PbI2 and study their optoelectronic properties. △ Less

Submitted 10 October, 2017; originally announced October 2017.

Comments: main text 20 pages + 10 figures, supporting information 16 pages + 17 figures

Photodiodes based in La0.7Sr0.3MnO3/single layer MoS2 hybrid vertical heterostructures

Authors: Yue Niu, Riccardo Frisenda, Simon A. Svatek, Gloria Orfila, Fernando Gallego, Patricia Gant, Nicolás Agraït, Carlos León, Alberto Rivera-Calzada, David Perez De Lara, Jacobo Santamaría, Andres Castellanos-Gomez

Abstract: The fabrication of artificial materials by stacking of individual two-dimensional (2D) materials is amongst one of the most promising research avenues in the field of 2D materials. Moreover, this strategy to fabricate new man-made materials can be further extended by fabricating hybrid stacks between 2D materials and other functional materials with different dimensionality making the potential num… ▽ More The fabrication of artificial materials by stacking of individual two-dimensional (2D) materials is amongst one of the most promising research avenues in the field of 2D materials. Moreover, this strategy to fabricate new man-made materials can be further extended by fabricating hybrid stacks between 2D materials and other functional materials with different dimensionality making the potential number of combinations almost infinite. Among all these possible combinations, mixing 2D materials with transition metal oxides can result especially useful because of the large amount of interesting physical phenomena displayed separately by these two material families. We present a hybrid device based on the stacking of a single layer MoS2 onto a lanthanum strontium manganite (La0.7Sr0.3MnO3) thin film, creating an atomically thin device. It shows a rectifying electrical transport with a ratio of 103, and a photovoltaic effect with Voc up to 0.4 V. The photodiode behaviour arises as a consequence of the different do** character of these two materials. This result paves the way towards combining the efforts of these two large materials science communities. △ Less

Submitted 19 June, 2017; originally announced June 2017.

Comments: 1 table, 4 figures (+9 supp. info. figures)

Dielectrophoretic assembly of liquid-phase-exfoliated TiS3 nanoribbons for photodetecting applications

Authors: R. Frisenda, E. Giovanelli, P. Mishra, P. Gant, E. Flores, C. Sánchez, J. R. Ares, D. Perez de Lara, I. J. Ferrer, E. M. Pérez, A. Castellanos-Gomez

Abstract: Liquid-phase-exfoliation is a technique capable of producing large quantities of two-dimensional material in suspension. Despite many efforts in the optimization of the exfoliation process itself not much has been done towards the integration of liquid-phase-exfoliated materials in working solid-state devices. In this article, we use dielectrophoresis to direct the assembly of liquid-phase-exfolia… ▽ More Liquid-phase-exfoliation is a technique capable of producing large quantities of two-dimensional material in suspension. Despite many efforts in the optimization of the exfoliation process itself not much has been done towards the integration of liquid-phase-exfoliated materials in working solid-state devices. In this article, we use dielectrophoresis to direct the assembly of liquid-phase-exfoliated TiS3 nanoribbons between two gold electrodes to produce photodetectors working in the visible. Through electrical and optical measurements we characterize the responsivity of the device and we find values as large as 3.8 mA/W, which improve of more than one order of magnitude on the state-of-the-art for devices based on liquid-phase-exfoliated two-dimensional materials assembled by drop-casting or ink-jet methods. △ Less

Submitted 12 June, 2017; originally announced June 2017.

Comments: 10 pages, 3 figures, supporting information (8 pages, 11 figures)

Lithography-free electrical transport measurements on 2D materials by direct microprobing

Authors: Patricia Gant, Yue Niu, Simon A. Svatek, Nicolás Agraït, Carmen Munuera, Mar García- Hernández, Riccardo Frisenda, David Perez de Lara, Andres Castellanos-Gomez

Abstract: We present a method to carry out electrical and opto-electronic measurements on 2D materials using carbon fiber microprobes to directly make electrical contacts to the 2D materials without damaging them. The working principle of this microprobing method is illustrated by measuring transport in MoS2 flakes in vertical (transport in the out-of-plane direction) and lateral (transport within the cryst… ▽ More We present a method to carry out electrical and opto-electronic measurements on 2D materials using carbon fiber microprobes to directly make electrical contacts to the 2D materials without damaging them. The working principle of this microprobing method is illustrated by measuring transport in MoS2 flakes in vertical (transport in the out-of-plane direction) and lateral (transport within the crystal plane) configurations, finding performances comparable to those reported for MoS2 devices fabricated by conventional lithographic process. We also show that this method can be used with other 2D materials. △ Less

Submitted 20 May, 2017; originally announced May 2017.

Comments: 7 main text figures + 11 Supp. Info. figures. Total 25 pages

Mechanically Controlled Quantum Interference in Individual π-stacked Dimers

Authors: Riccardo Frisenda, Vera Jansen, Ferdinand C. Grozema, Herre S. J. van der Zant, Nicolas Renaud

Abstract: Recent observations of destructive quantum interference in single-molecule junctions confirm the role played by quantum effects in the electronic conductance properties of molecular systems. We show here that the destructive interference can be turned ON or OFF within the same molecular system by mechanically controlling its conformation. Using a combination of ab-initio calculations and single-mo… ▽ More Recent observations of destructive quantum interference in single-molecule junctions confirm the role played by quantum effects in the electronic conductance properties of molecular systems. We show here that the destructive interference can be turned ON or OFF within the same molecular system by mechanically controlling its conformation. Using a combination of ab-initio calculations and single-molecule conductance measurements, we demonstrate the existence of a quasi-periodic destructive quantum interference pattern along the breaking traces of π-π stacked molecular dimers. The detection of these interferences, which are due to opposite signs of the intermolecular electronic couplings, was only made possible by a combination of wavelet transform and higher-order statistical analysis of single-breaking traces. The results demonstrate that it is possible to control the molecular conductance over a few orders of magnitudes and with a sub-angstrom resolution by exploiting the subtle structure-property relationship of π-π stack dimers. These large conductance changes may be beneficial for the design of single-molecule electronic components that exploit the intrinsic quantum effects occurring at the molecular scale. △ Less

Submitted 8 May, 2017; originally announced May 2017.

Comments: 10 pages, 4 figures

Journal ref: Nature Chemistry 8, 1099-1104 (2016)

A versatile scanning photocurrent map** system to characterize optoelectronic devices based on 2D materials

Authors: Christoph Reuter, Riccardo Frisenda, Der-Yuh Lin, Tsung-Shine Ko, David Perez de Lara, Andres Castellanos-Gomez

Abstract: The investigation of optoelectronic devices based on two-dimensional materials and their heterostructures is a very active area of investigation with both fundamental and applied aspects involved. We present a description of a home-built scanning photocurrent microscope that we have designed and developed to perform electronic transport and optical measurements of two-dimensional materials based d… ▽ More The investigation of optoelectronic devices based on two-dimensional materials and their heterostructures is a very active area of investigation with both fundamental and applied aspects involved. We present a description of a home-built scanning photocurrent microscope that we have designed and developed to perform electronic transport and optical measurements of two-dimensional materials based devices. The complete system is rather inexpensive (<10000 EUR) and it can be easily replicated in any laboratory. To illustrate the setup we measure current-voltage characteristics, in dark and under global illumination, of an ultra-thin PN junction formed by the stacking of an n-doped few-layer MoS2 flake onto a p-type MoS2 flake. We then acquire scanning photocurrent maps and by map** the short circuit current generated in the device under local illumination we find that at zero bias the photocurrent is generated mostly in the region of overlap between the n-type and p-type flakes. △ Less

Submitted 4 May, 2017; originally announced May 2017.

Comments: 9 pages, 3 figures, 1 table, supporting information

High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

Authors: Foad Ghasemi, Riccardo Frisenda, Dumitru Dumcenco, Andras Kis, David Perez de Lara, Andres Castellanos-Gomez

Abstract: The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate… ▽ More The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 μm2 and 60 μm2. Differential reflectance measurements performed on these crystallites show that the area of the MoS2 crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS2. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large area CVD grown samples. △ Less

Submitted 6 April, 2017; originally announced April 2017.

Comments: 10 pages, 5 figures

Journal ref: Electronics, 6, p.28 (2017)

Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides

Authors: Riccardo Frisenda, Matthias Drüppel, Robert Schmidt, Steffen Michaelis de Vasconcellos, David Perez de Lara, Rudolf Bratschitsch, Michael Rohlfing, Andres Castellanos-Gomez

Abstract: Since their discovery single-layer semiconducting transition metal dichalcogenides have attracted much attention thanks to their outstanding optical and mechanical properties. Strain engineering in these two-dimensional materials aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we demonstrate that biaxial strain, b… ▽ More Since their discovery single-layer semiconducting transition metal dichalcogenides have attracted much attention thanks to their outstanding optical and mechanical properties. Strain engineering in these two-dimensional materials aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we demonstrate that biaxial strain, both tensile and compressive, can be applied and released in a timescale of a few seconds in a reproducible way on transition metal dichalcogenides monolayers deposited on polymeric substrates. We can control the amount of biaxial strain applied by letting the substrate expand or compress. To do this we change the substrate temperature and choose materials with a large thermal expansion coefficient. After the investigation of the substrate-dependent strain transfer, we performed micro-differential spectroscopy of four transition metal dichalcogenides monolayers (MoS2, MoSe2, WS2, WSe2) under the application of biaxial strain and measured their optical properties. For tensile strain we observe a redshift of the bandgap that reaches a value as large as 95 meV/% in the case of single-layer WS2 deposited on polypropylene. The observed bandgap shifts as a function of substrate extension/compression follow the order MoSe2 < MoS2 < WSe2 < WS2. Theoretical calculations of these four materials under biaxial strain predict the same trend for the material-dependent rates of the shift and reproduce well the features observed in the measured reflectance spectra. △ Less

Submitted 8 March, 2017; originally announced March 2017.

Comments: 10 pages, 5 figures, 2 tables, supporting information

Journal ref: npj 2D Materials and Applications 1, 10 (2017)

Gate Tunable Photovoltaic Effect in MoS2 vertical P-N Homostructures

Authors: Simon A. Svatek, Elisa Antolin, Der-Yuh Lin, Riccardo Frisenda, Christoph Reuter, Aday J. Molina-Mendoza, Manuel Muñoz, Nicolás Agraït, Tsung-Shine Ko, David Perez de Lara, Andres Castellanos-Gomez

Abstract: P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, s… ▽ More P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, stable and substitutional do** of MoS2 into n- and p-type has been demonstrated. MoS2 is an interesting material to use for optoelectronic applications due to the potential of low-cost production in large quantities, strong light-matter interactions and chemical stability. Here we report the characterization of the optoelectronic properties of vertical homojunctions made by stacking few-layer flakes of MoS2:Fe (n-type) and MoS2:Nb (p-type). The junctions exhibit a peak external quantum efficiency of 4.7 %, a maximum open circuit voltage of 0.51 V, they are stable in air and their rectification characteristics and photovoltaic response are in excellent agreement to the Shockley diode model. The gate-tunability of the maximum output power, the ideality factor and the shunt resistance indicate that the dark current is dominated by trap-assisted recombination and that the photocurrent collection depends strongly on the spatial extent of the space charge region. We demonstrate a response time faster than 80 ms and highlight the potential to integrate such devices into quasi-transparent and flexible optoelectronics. △ Less

Submitted 10 January, 2017; originally announced February 2017.

Comments: 6 main text figures + 5 Supp. Info. figures

Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials

Authors: Riccardo Frisenda, Yue Niu, Patricia Gant, Aday J. Molina-Mendoza, Robert Schmidt, Rudolf Bratschitsch, **xin Liu, Lei Fu, Dumitru Dumcenco, Andras Kis, David Perez De Lara, Andres Castellanos-Gomez

Abstract: Optical spectroscopy techniques such as differential reflectance and transmittance have proven to be very powerful techniques to study 2D materials. However, a thorough description of the experimental setups needed to carry out these measurements is lacking in the literature. We describe a versatile optical microscope setup to carry out differential reflectance and transmittance spectroscopy in 2D… ▽ More Optical spectroscopy techniques such as differential reflectance and transmittance have proven to be very powerful techniques to study 2D materials. However, a thorough description of the experimental setups needed to carry out these measurements is lacking in the literature. We describe a versatile optical microscope setup to carry out differential reflectance and transmittance spectroscopy in 2D materials with a lateral resolution of ~1 micron in the visible and near-infrared part of the spectrum. We demonstrate the potential of the presented setup to determine the number of layers of 2D materials and to characterize their fundamental optical properties such as excitonic resonances. We illustrate its performance by studying mechanically exfoliated and chemical vapor-deposited transition metal dichalcogenide samples. △ Less

Submitted 13 December, 2016; originally announced December 2016.

Comments: 5 main text figures + 1 table with all the part numbers to replicate the experimental setup + 4 supp. info. figures

Highly responsive UV-photodetectors based on single electrospun TiO2 nanofibres

Authors: Aday J. Molina-Mendoza, Alicia Moya, Riccardo Frisenda, Simon A. Svatek, Patricia Gant, Sergio Gonzalez-Abad, Elisa Antolin, Nicolás Agraït, Gabino Rubio-Bollinger, David Perez de Lara, Juan J. Vilatela, Andres Castellanos-Gomez

Abstract: In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the dark give a conductivity above 2*10^-5 S, which increases up to 8*10^-5 S in vacuum. Photocurrent measurements under UV-irradiation show high sensitivity (respo… ▽ More In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the dark give a conductivity above 2*10^-5 S, which increases up to 8*10^-5 S in vacuum. Photocurrent measurements under UV-irradiation show high sensitivity (responsivity of 90 A/W for 375 nm wavelength) and a response time to illumination of ~ 5 s, which is superior to state-of-the-art TiO2-based UV photodetectors. Both responsivity and response speed are higher in air than in vacuum, due to oxygen adsorbed on the TiO2 surface which traps photoexcited free electrons in the conduction band, thus reducing the recombination processes. The photodetectors are sensitive to light polarization, with an anisotropy ratio of 12%. These results highlight the interesting combination of large surface area and low 1D transport resistance in electrospun TiO2 fibres. The simplicity of the sol-gel/electrospinning synthesis method, combined with a fast response and high responsivity makes them attractive candidates for UV-photodetection in ambient conditions. We anticipate their high (photo) conductance is also relevant for photocatalysis and dye-sensitized solar cells. △ Less

Submitted 3 November, 2016; originally announced November 2016.

Comments: 29 pages, 5 figures in the main text, 9 figures in the Supporting Information. in J. Mater. Chem. C, 2016