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Investigation of reinforcement learning for shape optimization of profile extrusion dies
Authors:
Clemens Fricke,
Daniel Wolff,
Marco Kemmerling,
Stefanie Elgeti
Abstract:
Profile extrusion is a continuous production process for manufacturing plastic profiles from molten polymer. Especially interesting is the design of the die, through which the melt is pressed to attain the desired shape. However, due to an inhomogeneous velocity distribution at the die exit or residual stresses inside the extrudate, the final shape of the manufactured part often deviates from the…
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Profile extrusion is a continuous production process for manufacturing plastic profiles from molten polymer. Especially interesting is the design of the die, through which the melt is pressed to attain the desired shape. However, due to an inhomogeneous velocity distribution at the die exit or residual stresses inside the extrudate, the final shape of the manufactured part often deviates from the desired one. To avoid these deviations, the shape of the die can be computationally optimized, which has already been investigated in the literature using classical optimization approaches.
A new approach in the field of shape optimization is the utilization of Reinforcement Learning (RL) as a learning-based optimization algorithm. RL is based on trial-and-error interactions of an agent with an environment. For each action, the agent is rewarded and informed about the subsequent state of the environment. While not necessarily superior to classical, e.g., gradient-based or evolutionary, optimization algorithms for one single problem, RL techniques are expected to perform especially well when similar optimization tasks are repeated since the agent learns a more general strategy for generating optimal shapes instead of concentrating on just one single problem.
In this work, we investigate this approach by applying it to two 2D test cases. The flow-channel geometry can be modified by the RL agent using so-called Free-Form Deformation, a method where the computational mesh is embedded into a transformation spline, which is then manipulated based on the control-point positions. In particular, we investigate the impact of utilizing different agents on the training progress and the potential of wall time saving by utilizing multiple environments during training.
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Submitted 23 December, 2022;
originally announced December 2022.
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Spin-dependent shot noise enhancement in a quantum dot
Authors:
Niels Ubbelohde,
Christian Fricke,
Frank Hohls,
Rolf J. Haug
Abstract:
The spin-dependent dynamical blockade was investigated in a lateral quantum dot in a magnetic field. Spin-polarized edge channels in the two-dimensional leads and the spatial distribution of Landau orbitals in the dot modulate the tunnel coupling of the quantum dot level spectrum. In a measurement of the electron shot noise we observe a pattern of super-Poissonian noise which is correlated to the…
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The spin-dependent dynamical blockade was investigated in a lateral quantum dot in a magnetic field. Spin-polarized edge channels in the two-dimensional leads and the spatial distribution of Landau orbitals in the dot modulate the tunnel coupling of the quantum dot level spectrum. In a measurement of the electron shot noise we observe a pattern of super-Poissonian noise which is correlated to the spin-dependent competition between different transport channels.
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Submitted 30 July, 2013;
originally announced July 2013.
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Measurement of finite-frequency current statistics in a single-electron transistor
Authors:
Niels Ubbelohde,
Christian Fricke,
Christian Flindt,
Frank Hohls,
Rolf J. Haug
Abstract:
Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have s…
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Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single electron transistor (SET) can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the SET. We have directly measured the frequency-dependent current statistics and hereby fully characterized the fundamental tunneling processes in the SET. Our experiment paves the way for future investigations of interaction and coherence induced correlation effects in quantum transport.
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Submitted 10 January, 2012;
originally announced January 2012.
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High-order cumulants in the counting statistics of asymmetric quantum dots
Authors:
Christian Fricke,
Frank Hohls,
Nandhavel Sethubalasubramanian,
Lukas Fricke,
Rolf J. Haug
Abstract:
Measurements of single electron tunneling through a quantum dot using a quantum point contact as charge detector have been performed for very long time traces with very large event counts. This large statistical basis is used for a detailed examination of the counting statistics for varying symmetry of the quantum dot system. From the measured statistics we extract high order cumulants describing…
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Measurements of single electron tunneling through a quantum dot using a quantum point contact as charge detector have been performed for very long time traces with very large event counts. This large statistical basis is used for a detailed examination of the counting statistics for varying symmetry of the quantum dot system. From the measured statistics we extract high order cumulants describing the distribution. Oscillations of the high order cumulants are observed when varying the symmetry. We compare this behavior to the observed oscillation in time dependence and show that the variation of both system variables lead to the same kind of oscillating response.
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Submitted 3 June, 2010;
originally announced June 2010.
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High cumulants in the counting statistics measured for a quantum dot
Authors:
Christian Fricke,
Frank Hohls,
Christian Flindt,
Rolf J. Haug
Abstract:
We report on measurements of single electron tunneling through a quantum dot using a quantum point contact as non-invasive charge detector with fast time response. We elaborate on the unambiguous identification of individual tunneling events and determine the distribution of transferred charges, the so-called full counting statistics. We discuss our data analysis, including the error estimates o…
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We report on measurements of single electron tunneling through a quantum dot using a quantum point contact as non-invasive charge detector with fast time response. We elaborate on the unambiguous identification of individual tunneling events and determine the distribution of transferred charges, the so-called full counting statistics. We discuss our data analysis, including the error estimates of the measurement, and show that the quality of our experimental results is sufficiently high to extract cumulants of the distribution up to the 20th order for short times.
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Submitted 2 March, 2010;
originally announced March 2010.
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Universal oscillations in counting statistics
Authors:
Christian Flindt,
Christian Fricke,
Frank Hohls,
Tomas Novotny,
Karel Netocny,
Tobias Brandes,
Rolf J. Haug
Abstract:
Noise is a result of stochastic processes that originate from quantum or classical sources. Higher-order cumulants of the probability distribution underlying the stochastic events are believed to contain details that characterize the correlations within a given noise source and its interaction with the environment, but they are often difficult to measure. Here we report measurements of the trans…
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Noise is a result of stochastic processes that originate from quantum or classical sources. Higher-order cumulants of the probability distribution underlying the stochastic events are believed to contain details that characterize the correlations within a given noise source and its interaction with the environment, but they are often difficult to measure. Here we report measurements of the transient cumulants <<n^m>> of the number n of passed charges to very high orders (up to m=15) for electron transport through a quantum dot. For large m, the cumulants display striking oscillations as functions of measurement time with magnitudes that grow factorially with m. Using mathematical properties of high-order derivatives in the complex plane we show that the oscillations of the cumulants in fact constitute a universal phenomenon, appearing as functions of almost any parameter, including time in the transient regime. These ubiquitous oscillations and the factorial growth are system-independent and our theory provides a unified interpretation of previous theoretical studies of high-order cumulants as well as our new experimental data.
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Submitted 1 July, 2009; v1 submitted 7 January, 2009;
originally announced January 2009.
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Bimodal Counting Statistics in Single Electron Tunneling through a Quantum Dot
Authors:
C. Fricke,
F. Hohls,
W. Wegscheider,
R. J. Haug
Abstract:
We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For certain configurations we observe super-Poissonian statistic…
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We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For certain configurations we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts we relate this to a slow switching between different electron configurations on the quantum dot.
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Submitted 16 May, 2007;
originally announced May 2007.
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Coupling symmetry of quantum dot states
Authors:
M. C. Rogge,
B. Harke,
C. Fricke,
F. Hohls,
M. Reinwald,
W. Wegscheider,
R. J. Haug
Abstract:
With non-invasive methods, we investigate ground and excited states of a lateral quantum dot. Charge detection via a quantum point contact is used to map the dot dynamics in a regime where the current through the dot is too low for transport measurements. In this way we investigate and compare the tunneling rates from the dot to source and drain. We find a symmetry line on which the tunneling ra…
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With non-invasive methods, we investigate ground and excited states of a lateral quantum dot. Charge detection via a quantum point contact is used to map the dot dynamics in a regime where the current through the dot is too low for transport measurements. In this way we investigate and compare the tunneling rates from the dot to source and drain. We find a symmetry line on which the tunneling rates to both leads are equal. In this situation ground states as well as excited states influence the mean charge of the dot. A detailed study in this regime reveals that the coupling symmetry depends on the number of states contributing to transport and on the spatial distribution of individual states.
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Submitted 4 August, 2005;
originally announced August 2005.
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Non-invasive detection of charge-rearrangement in a quantum dot in high magnetic fields
Authors:
C. Fricke,
M. C. Rogge,
B. Harke,
M. Reinwald,
W. Wegscheider,
F. Hohls,
R. J. Haug
Abstract:
We demonstrate electron redistribution caused by magnetic field on a single quantum dot measured by means of a quantum point contact as non-invasive detector. Our device which is fabricated by local anodic oxidation allows to control independently the quantum point contact and all tunnelling barriers of the quantum dot. Thus we are able to measure both the change of the quantum dot charge and al…
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We demonstrate electron redistribution caused by magnetic field on a single quantum dot measured by means of a quantum point contact as non-invasive detector. Our device which is fabricated by local anodic oxidation allows to control independently the quantum point contact and all tunnelling barriers of the quantum dot. Thus we are able to measure both the change of the quantum dot charge and also changes of the electron configuration at constant number of electrons on the quantum dot. We use these features to exploit the quantum dot in a high magnetic field where transport through the quantum dot displays the effects of Landau shells and spin blockade. We confirm the internal rearrangement of electrons as function of the magnetic field for a fixed number of electrons on the quantum dot.
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Submitted 29 April, 2005;
originally announced April 2005.
