-
Symmetry and Finite-Size Effects in Quasi-Optical Extraordinarily THz Transmitting Arrays of Tilted Slots
Authors:
Miguel Camacho,
Ajla Nekovic,
Suzanna Freer,
Pavel Penchev,
Rafael R. Boix,
Stefan Dimov,
Miguel Navarro-Cía
Abstract:
Extraordinarily transmitting arrays are promising candidates for quasi-optical (QO) components due to their high frequency selectivity and beam scanning capabilities owing to the leaky-wave mechanism involved. We show here how by breaking certain unit cell and lattice symmetries, one can achieve a rich family of transmission resonances associated with the leaky-wave dispersion along the surface of…
▽ More
Extraordinarily transmitting arrays are promising candidates for quasi-optical (QO) components due to their high frequency selectivity and beam scanning capabilities owing to the leaky-wave mechanism involved. We show here how by breaking certain unit cell and lattice symmetries, one can achieve a rich family of transmission resonances associated with the leaky-wave dispersion along the surface of the array. By combining 2-D and 1-D periodic method of moments (MoM) calculations with QO terahertz (THz) time-domain measurements, we provide physical insights, numerical, and experimental demonstration of the different mechanisms involved in the resonances associated with the extraordinary transmission peaks and how these evolve with the number of slots. Thanks to the THz instrument used, we are also able to explore the time-dependent emission of the different frequency components involved.
△ Less
Submitted 27 August, 2020;
originally announced August 2020.
-
A single-atom quantum memory in silicon
Authors:
S. Freer,
S. Simmons,
A. Laucht,
J. T. Muhonen,
J. P. Dehollain,
R. Kalra,
F. A. Mohiyaddin,
F. Hudson,
K. M. Itoh,
J. C. McCallum,
D. N. Jamieson,
A. S. Dzurak,
A. Morello
Abstract:
Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coex…
▽ More
Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched $^{28}$Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity of $F_p =$81${\pm}$7%, a memory fidelity ($F_m$) of over 90%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.
△ Less
Submitted 5 September, 2016; v1 submitted 25 August, 2016;
originally announced August 2016.
-
Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin
Authors:
Arne Laucht,
Stephanie Simmons,
Rachpon Kalra,
Guilherme Tosi,
Juan P. Dehollain,
Juha T. Muhonen,
Solomon Freer,
Fay E. Hudson,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Andrea Morello
Abstract:
We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency…
▽ More
We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency $ν_{\rm MW}$ and the electron spin transition frequency $ν_e$ at the frequency of the level splitting. The resulting dressed qubit Rabi frequency $Ω_{Rρ}$ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down, without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data.
△ Less
Submitted 1 September, 2016; v1 submitted 7 June, 2016;
originally announced June 2016.
-
A Dressed Spin Qubit in Silicon
Authors:
Arne Laucht,
Rachpon Kalra,
Stephanie Simmons,
Juan P. Dehollain,
Juha T. Muhonen,
Fahd A. Mohiyaddin,
Solomon Freer,
Fay E. Hudson,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
A. Morello
Abstract:
Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed sp…
▽ More
Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of $T_{2ρ}^*=2.4$ ms and $T_{2ρ}^{\rm Hahn}=9$ ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.
△ Less
Submitted 15 March, 2016;
originally announced March 2016.
-
Vibration-induced electrical noise in a cryogen-free dilution refrigerator: characterization, mitigation, and impact on qubit coherence
Authors:
Rachpon Kalra,
Arne Laucht,
Juan P. Dehollain,
Daniel Bar,
Solomon Freer,
Stephanie Simmons,
Juha T. Muhonen,
Andrea Morello
Abstract:
Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to th…
▽ More
Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to the electrical signal observed on cables installed in a cryogen-free dilution refrigerator. The dominant electrical noise is in the 5 to 10 kHz range and its magnitude is found to be strongly temperature dependent. We test the performance of different cables designed to diagnose and tackle the noise, and find triboelectrics to be the dominant mechanism coupling the vibrations to the electrical signal. Flattening a semi-rigid cable or jacketing a flexible cable in order to restrict movement within the cable, successfully reduces the noise level by over an order of magnitude. Furthermore, we characterize the effect of the pulse tube vibrations on an electron spin qubit device in this setup. Coherence measurements are used to map out the spectrum of the noise experienced by the qubit, revealing spectral components matching the spectral signature of the pulse tube.
△ Less
Submitted 7 July, 2016; v1 submitted 9 March, 2016;
originally announced March 2016.
-
Electrically controlling single spin qubits in a continuous microwave field
Authors:
Arne Laucht,
Juha T. Muhonen,
Fahd A. Mohiyaddin,
Rachpon Kalra,
Juan P. Dehollain,
Solomon Freer,
Fay E. Hudson,
Menno Veldhorst,
Rajib Rahman,
Gerhard Klimeck,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electr…
▽ More
Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electric field, which induces a Stark shift of the qubit energies. This method, known as A-gate control, preserves the excellent coherence times and gate fidelities of isolated spins, and can be extended to arbitrarily many qubits without requiring multiple microwave sources.
△ Less
Submitted 19 March, 2015;
originally announced March 2015.
-
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
Authors:
J. T. Muhonen,
A. Laucht,
S. Simmons,
J. P. Dehollain,
R. Kalra,
F. E. Hudson,
S. Freer,
K. M. Itoh,
D. N. Jamieson,
J. C. McCallum,
A. S. Dzurak,
A. Morello
Abstract:
Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically p…
▽ More
Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically purified 28-Si. We find average gate fidelities of 99.95 % for the electron, and 99.99 % for the nuclear spin. These values are above certain error correction thresholds, and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware, and not the intrinsic behaviour of the qubit.
△ Less
Submitted 8 October, 2014;
originally announced October 2014.
