Origin of pinning disorder in magnetic-field-induced Wigner solids
Authors:
Matthew L. Freeman,
P. T. Madathil,
L. N. Pfeiffer,
K. W. Baldwin,
Y. J. Chung,
R. Winkler,
M. Shayegan,
L. W. Engel
Abstract:
At low Landau level filling factors ($ν$), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder, and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the last three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown.…
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At low Landau level filling factors ($ν$), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder, and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the last three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown. Here we present a study of the pinning mode resonance in the low-$ν$ Wigner solid phases of a series of ultralow-disorder GaAs quantum wells which are similar except for their varying well widths, $d$. The pinning mode frequencies,$f_p$, decrease strongly as $d$ increases, with the widest well exhibiting $f_p$ as low as $\simeq$35 MHz. The amount of reduction of \fp\ with increasing $d$ can be explained remarkably well by tails of the wave function im**ing into the alloy-disordered Al$_x$Ga$_{1-x}$As barriers that contain the electrons. However, it is imperative that the model for the confinement and wave function includes the Coulomb repulsion in the growth direction between the electrons as they occupy the quantum well.
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Submitted 10 April, 2024;
originally announced April 2024.
Resistively loaded coplanar waveguide for microwave measurements of induced carriers
Authors:
M. L. Freeman,
Tzu-Ming Lu,
L. W. Engel
Abstract:
We describe the use of a coplanar waveguide whose slots are filled with resistive film, a resistively loaded coplanar waveguide (RLCPW), to measure two dimensional electron systems (2DES). The RLCPW applied to the sample hosting the 2DES provides a uniform metallic surface serving as a gate, to control the areal charge density of the 2DES. As a demonstration of this technique we present measuremen…
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We describe the use of a coplanar waveguide whose slots are filled with resistive film, a resistively loaded coplanar waveguide (RLCPW), to measure two dimensional electron systems (2DES). The RLCPW applied to the sample hosting the 2DES provides a uniform metallic surface serving as a gate, to control the areal charge density of the 2DES. As a demonstration of this technique we present measurements on a Si MOSFET, and a model that successfully converts microwave transmission coefficients into conductivity of a nearby 2DES capacitively coupled to the RLCPW. We also describe the process of fabricating the highly resistive metal film required for fabrication of the RLCPW.
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Submitted 13 January, 2022; v1 submitted 7 January, 2022;
originally announced January 2022.
