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Accurate modeling and characterization of photothermal forces in optomechanics
Authors:
André G. Primo,
Cauê M. Kersul,
Rodrigo Benevides,
Natália C. Carvalho,
Michaël Ménard,
Newton C. Frateschi,
Pierre-Louis de Assis,
Gustavo S. Wiederhecker,
Thiago P. Mayer Alegre
Abstract:
Photothermal effects have been pointed out as prominent sources of forces in optomechanical systems, competing with the standard radiation pressure interactions. In this Article, we derive a novel and accurate model for the prediction of photothermal forces and establish how some previous proposals can be complemented to yield precise results. As a proof-of-concept, we perform numerical and experi…
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Photothermal effects have been pointed out as prominent sources of forces in optomechanical systems, competing with the standard radiation pressure interactions. In this Article, we derive a novel and accurate model for the prediction of photothermal forces and establish how some previous proposals can be complemented to yield precise results. As a proof-of-concept, we perform numerical and experimental tests on GaAs microdisks cavities and obtain striking agreement with our framework, revealing the importance of considering surface photothermal forces and the effects of multiple thermal modes in microphotonic devices.
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Submitted 7 July, 2021; v1 submitted 22 August, 2020;
originally announced August 2020.
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High-Frequency GaAs Optomechanical Bullseye Resonator
Authors:
N. C. Carvalho,
R. Benevides,
M. Ménard,
G. S. Wiederhecker,
N. C. Frateschi,
T. P. Mayer Alegre
Abstract:
The integration of optomechanics and optoelectronics in a single device opens new possibilities for develo** information technologies and exploring fundamental phenomena. Gallium arsenide (GaAs) is a well-known material that can bridge the gap between the functionalities of optomechanical devices and optical gain media. Here, we experimentally demonstrate a high-frequency GaAs optomechanical res…
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The integration of optomechanics and optoelectronics in a single device opens new possibilities for develo** information technologies and exploring fundamental phenomena. Gallium arsenide (GaAs) is a well-known material that can bridge the gap between the functionalities of optomechanical devices and optical gain media. Here, we experimentally demonstrate a high-frequency GaAs optomechanical resonator with a ring-type bullseye geometry that is unprecedented in this platform. We measured mechanical modes up to 3.4 GHz with quality factors of 4000 (at 77 K) and optomechanical coupling rates up to 39 kHz at telecom wavelengths. Moreover, we investigated the material symmetry break due to elastic anisotropy and its impact on the mechanical mode spectrum. Finally, we assessed the temperature dependence of the mechanical losses and demonstrated the efficiency and anisotropy resilience of the bullseye anchor loss suppression, indicating that lower temperature operation may allow mechanical quality factors over $10^4$. Such characteristics are valuable for active optomechanics, coherent microwave-to-optics conversion via piezo-mechanics and other implementations of high-frequency oscillators in III-V materials.
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Submitted 23 October, 2020; v1 submitted 7 August, 2020;
originally announced August 2020.
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Quasinormal-mode perturbation theory for dissipative and dispersive optomechanics
Authors:
André G. Primo,
Natália C. Carvalho,
Cauê M. Kersul,
Newton C. Frateschi,
Gustavo S. Wiederhecker,
Thiago P. Mayer Alegre
Abstract:
Despite the several novel features arising from the dissipative optomechanical coupling, such effect remains vastly unexplored due to the lack of a simple formalism that captures non-Hermiticity in optomechanical systems. In this Letter, we show that quasinormal-mode-based perturbation theory is capable of correctly predicting both dispersive and dissipative optomechanical couplings. We validate o…
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Despite the several novel features arising from the dissipative optomechanical coupling, such effect remains vastly unexplored due to the lack of a simple formalism that captures non-Hermiticity in optomechanical systems. In this Letter, we show that quasinormal-mode-based perturbation theory is capable of correctly predicting both dispersive and dissipative optomechanical couplings. We validate our model through simulations and also by comparison with experimental results reported in the literature. Finally, we apply this formalism to plasmonic systems, used for molecular optomechanics, where strong dissipative coupling signatures in the amplification of vibrational modes are observed.
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Submitted 5 October, 2020; v1 submitted 31 May, 2020;
originally announced June 2020.
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Integrated Platform for Robust Differential Refractive Index Sensor
Authors:
Andre L. Moras,
Valnir C. S. Junior,
Mario C. M. M. Souza,
Giuseppe A. Cirino,
Antonio A. G. Von Zuben,
Newton C. Frateschi,
Luis A. M. Barea
Abstract:
In this work, we demonstrate an integrated platform comprising a refractive index (RI) sensor based on Photonic Molecule (PM) that effectively mitigates the influence of environmental perturbations using a differential measurement scheme while providing high quality-factor (Q) resonances. The RI sensor consists of an exposed microdisk resonator coupled to an external clad microring resonator fabri…
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In this work, we demonstrate an integrated platform comprising a refractive index (RI) sensor based on Photonic Molecule (PM) that effectively mitigates the influence of environmental perturbations using a differential measurement scheme while providing high quality-factor (Q) resonances. The RI sensor consists of an exposed microdisk resonator coupled to an external clad microring resonator fabricated on silicon-on-insulator (SOI) platform. We report a RI sensitivity of 23 nm/RIU, achieving a limit of detection (LOD) of 1.6 x 10-3 refractive index units (RIU) with improved stability in a compact footprint of 40 x 40 μm2, representing a good solution for real-life applications in which measurement conditions are not easily controllable.
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Submitted 5 December, 2019;
originally announced December 2019.
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Loss-Compensating Si Photonics Signal Routers
Authors:
P. F. Jarschel,
M. C. M. M. Souza,
R. B. Merlo,
N. C. Frateschi
Abstract:
We propose and demonstrate a low-cost integrated photonic chip fabricated in a SOI foundry capable of simultaneously routing and amplifying light in a chip. This device is able to compensate insertion losses in photonic routers. It consists of standard Si/SiO2 ring resonators with Er:Al2O3 as the upper cladding layer, employed using only one simple post-processing step. This resulted in a measured…
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We propose and demonstrate a low-cost integrated photonic chip fabricated in a SOI foundry capable of simultaneously routing and amplifying light in a chip. This device is able to compensate insertion losses in photonic routers. It consists of standard Si/SiO2 ring resonators with Er:Al2O3 as the upper cladding layer, employed using only one simple post-processing step. This resulted in a measured on/off gain of 0.9 dB, with a footprint smaller than 0.002 mm2, and expected bit rates as high as 40Gb/s based on the resonance quality-factor. We show that the on/off gain value can be further increased using coupled rings to reach net gain values of 4 dB.
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Submitted 19 October, 2017;
originally announced December 2017.
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Fourier transform spectrometer on silicon with thermo-optic non-linearity and dispersion correction
Authors:
Mario C. M. M. Souza,
Andrew Grieco,
Newton C. Frateschi,
Yeshaiahu Fainman
Abstract:
The integration of miniaturized optical spectrometers into mobile platforms will have an unprecedented impact on applications ranging from unmanned aerial vehicles (UAVs) to mobile phones. To address this demand, silicon photonics stands out as a platform capable of delivering compact and cost-effective devices. The Fourier transform spectrometer (FTS) is largely used in free-space spectroscopy, a…
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The integration of miniaturized optical spectrometers into mobile platforms will have an unprecedented impact on applications ranging from unmanned aerial vehicles (UAVs) to mobile phones. To address this demand, silicon photonics stands out as a platform capable of delivering compact and cost-effective devices. The Fourier transform spectrometer (FTS) is largely used in free-space spectroscopy, and its implementation in silicon photonics will contribute to bringing broadband operation and fine resolution to the chip scale. The implementation of an integrated silicon photonics FTS (Si-FTS) must nonetheless take into account effects such as waveguide dispersion and non-linearity of refractive index tuning mechanisms. Here we present the modeling and experimental demonstration of a silicon-on-insulator (SOI) Si-FTS with integrated microheaters. We show how the power spectral density (PSD) of a light source and the interferogram measured with the Si-FTS can be related through a simple Fourier transform (FT), provided the optical frequency and time delay are corrected to account for dispersion, thermo-optic non-linearity and thermal expansion. We calibrate the Si-FTS, including the correction parameters, using a tunable laser source and we successfully retrieve the PSD of a broadband source. The aforementioned effects are shown to effectively enhance the Si-FTS resolution when properly accounted for. Finally, we discuss the Si-FTS resilience to chip-scale fabrication variations, a major advantage for large-scale manufacturing. Providing design flexibility and robustness, the Si-FTS is poised to become a fundamental building-block for on-chip spectroscopy
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Submitted 18 September, 2017;
originally announced October 2017.
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Modeling quasi-dark states with Temporal Coupled-Mode Theory
Authors:
Mario C. M. M. Souza,
Guilherme F. M. Rezende,
Luis A. M. Barea,
Gustavo S. Wiederhecker,
Newton C. Frateschi
Abstract:
Coupled resonators are commonly used to achieve tailored spectral responses and allow novel functionalities in a broad range of applications, from optical modulation and filtering in integrated photonic circuits to the study of nonlinear dynamics in arrays of resonators. The Temporal Coupled-Mode Theory (TCMT) provides a simple and general tool that is widely used to model these devices and has pr…
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Coupled resonators are commonly used to achieve tailored spectral responses and allow novel functionalities in a broad range of applications, from optical modulation and filtering in integrated photonic circuits to the study of nonlinear dynamics in arrays of resonators. The Temporal Coupled-Mode Theory (TCMT) provides a simple and general tool that is widely used to model these devices and has proved to yield very good results in many different systems of low-loss, weakly coupled resonators. Relying on TCMT to model coupled resonators might however be misleading in some circumstances due to the lumped-element nature of the model. In this article, we report an important limitation of TCMT related to the prediction of dark states. Studying a coupled system composed of three microring resonators, we demonstrate that TCMT predicts the existence of a dark state that is in disagreement with experimental observations and with the more general results obtained with the Transfer Matrix Method (TMM) and the Finite-Difference Time-Domain (FDTD) simulations. We identify the limitation in the TCMT model to be related to the mechanism of excitation/decay of the supermodes and we propose a correction that effectively reconciles the model with expected results. A comparison with TMM and FDTD allows to verify both steady-state and transient solutions of the modified-TCMT model. The proposed correction is derived from general considerations, energy conservation and the non-resonant power circulating in the system, therefore it provides good insight on how the TCMT model should be modified to eventually account for the same limitation in a different coupled-resonator design. Moreover, our discussion based on coupled microring resonators can be useful for other electromagnetic resonant systems due to the generality and far-reach of the TCMT formalism.
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Submitted 7 June, 2016;
originally announced June 2016.
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Spectral Engineering with Coupled Microcavities: Active Control of Resonant Mode-Splitting
Authors:
Mario C. M. M. Souza,
Guilherme Rezende,
Luis A. M. Barea,
Antonio A. G. von Zuben,
Gustavo S. Wiederhecker,
Newton C. Frateschi
Abstract:
Optical mode-splitting is an efficient tool to shape and fine-tune the spectral response of resonant nanophotonic devices. The active control of mode-splitting, however, is either small or accompanied by undesired resonance shifts, often much larger than the resonance-splitting. We report a control mechanism that enables reconfigurable and widely tunable mode-splitting while efficiently mitigating…
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Optical mode-splitting is an efficient tool to shape and fine-tune the spectral response of resonant nanophotonic devices. The active control of mode-splitting, however, is either small or accompanied by undesired resonance shifts, often much larger than the resonance-splitting. We report a control mechanism that enables reconfigurable and widely tunable mode-splitting while efficiently mitigating undesired resonance shifts. This is achieved by actively controlling the excitation of counter-traveling modes in coupled resonators. The transition from a large splitting (80 GHz) to a single-notch resonance is demonstrated using low power microheaters (35 mW). We show that the spurious resonance-shift in our device is only limited by thermal crosstalk and resonance-shift-free splitting control may be achieved.
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Submitted 26 May, 2015;
originally announced May 2015.
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Spectral_Engineering_with_CMOS_compatible_SOI_Photonic_Molecules
Authors:
Luis A. M. Barea,
Felipe Valini,
Guilherme F. M. de Rezende,
Newton C. Frateschi
Abstract:
Photonic systems based on microring resonators have a fundamental constrain given by the strict relationship among free spectral range (FSR), total quality factor (QT) and resonator size, intrinsically making filter spacing, photonic lifetime and footprint interdependent. Here we break this paradigm employing CMOS compatible Silicon-on-Insulator (SOI) photonic molecules based on coupled multiple r…
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Photonic systems based on microring resonators have a fundamental constrain given by the strict relationship among free spectral range (FSR), total quality factor (QT) and resonator size, intrinsically making filter spacing, photonic lifetime and footprint interdependent. Here we break this paradigm employing CMOS compatible Silicon-on-Insulator (SOI) photonic molecules based on coupled multiple ring resonators. The resonance wavelengths and their respective linewidths are controlled by the hybridization of the quasi-orthogonal photonic states. We demonstrate photonic molecules with doublet and triplet resonances with spectral spliting only achievable with single rings orders of magnitude larger in foot print. Besides, these splitting are potentially controllable based on the coupling (bonds) between resonators. Finally, the spatial distribution of the hybrid states allows up to sevenfold QT enhancement.
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Submitted 16 October, 2013;
originally announced October 2013.
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Induced Optical Losses in Optoelectronic Devices due to Focused Ion Beam Damages
Authors:
Felipe Vallini,
Luís Alberto Mijan Barea,
Elohim Fonseca dos Reis,
Antônio Augusto von Zuben,
Newton Cesário Frateschi
Abstract:
A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V c…
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A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compounds milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and formation of metallic clusters. Microdisk resonators were fabricated using FIB milling with different emission currents to analyze these effects on a device. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases due to optical scattering losses induced by implanted gallium atoms.
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Submitted 10 July, 2012;
originally announced July 2012.
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Highly luminescent a-SiOx<Er>/SiO2/Si multilayer structure
Authors:
Rossano Lang,
David S. L. Figueira,
Felipe Vallini,
Newton C. Frateschi
Abstract:
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with low quality factor (Q-factor) at 1540 nm. Also, the structure has higher Q-factor resonances in the wavelength range between 600 - 1200 nm. Within this range,…
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We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with low quality factor (Q-factor) at 1540 nm. Also, the structure has higher Q-factor resonances in the wavelength range between 600 - 1200 nm. Within this range, strong light emission from a-SiOx defect-related radiative centers and emission from the Er3+ optical transition 4I11/2 - 4I15/2 (980 nm) are observed. A two-fold improvement in photoluminescence (PL) intensity is achieved in the wavelength range between 800 - 1000 nm. The PL intensity in the wavelength range between 1400 - 1700 nm (region of Er3+ 4I13/2 - 4I15/2 transition) is increased four times. This later higher intensity enhancement is apparently caused by optical pum** at 980 nm, higher Q-factor, with subsequent emission from the 4I13/2 level in the low Q resonance at 1540 nm. Further five times emission enhancement is obtained after optimized temperature annealing. The temperature-induced quenching in the PL intensity indicates distinct deactivation energies related to different types of Er centers which are more or less coupled to defects depending on the thermal treatment temperature.
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Submitted 10 May, 2012; v1 submitted 21 July, 2011;
originally announced July 2011.
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Resonant structures based on amorphous silicon sub-oxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm
Authors:
D. S. L. Figueira,
D. Mustafa,
L. R. Tessler,
N. C. Frateschi
Abstract:
We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that allowed increasing approximately 12x the 1550nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx<Er> matrix was deposited b…
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We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that allowed increasing approximately 12x the 1550nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx<Er> matrix was deposited by reactive RF co-sputtering. Secondly, an extra pump channel (4I15/2 to 4I9/2) of Er3+ was created due to Si-NC formation on the same a-SiOx<Er> matrix via a hard annealing at 1150 C. The SiO2 and the a-SiOx<Er> thicknesses were designed to support resonances near the pum** wavelength (~500nm), near the Si-NC emission (~800nm) and near the a-SiOx<Er> emission (~1550nm) enhancing the optical pum** process.
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Submitted 17 June, 2009;
originally announced June 2009.
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Effects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam
Authors:
F. Vallini,
D. S. L Figueira,
P. F. Jarschel,
L. A. M. Barea,
A. A. G. Von zuben,
A. S. Filho,
N. C. Frateschi
Abstract:
InGaAsP/InP quantum wells (QW) ridge waveguide lasers were fabricated for the evaluation of Ga+ Focused Ion Beam (FIB) milling of mirrors. Electrical and optical proprieties were investigated. A 7% increment in threshold current, a 17% reduction in external quantum efficiency and 15 nm blue shift in the emission spectrum were observed after milling as compared to the as cleaved facet result. Ann…
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InGaAsP/InP quantum wells (QW) ridge waveguide lasers were fabricated for the evaluation of Ga+ Focused Ion Beam (FIB) milling of mirrors. Electrical and optical proprieties were investigated. A 7% increment in threshold current, a 17% reduction in external quantum efficiency and 15 nm blue shift in the emission spectrum were observed after milling as compared to the as cleaved facet result. Annealing in inert atmosphere partially revert these effects resulting in 4% increment in threshold current, 11% reduction in external efficiency and 13 nm blue shift with the as cleaved result. The current-voltage behavior after milling and annealing shows a very small increase in leakage current indicating that optical damage is the main effect of the milling process.
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Submitted 6 April, 2009;
originally announced April 2009.
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Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures
Authors:
D. S. L Figueira,
D. Mustafa,
L. R. Tessler,
N. C. Frateschi
Abstract:
Si nanocrystals (Si-NC) in a-SiOx<Er> were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be d…
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Si nanocrystals (Si-NC) in a-SiOx<Er> were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples.
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Submitted 9 June, 2008;
originally announced June 2008.
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Rare-earth Doped Amorphous Silicon Microdisk and Microstadium Resonators with Emission at 1550nm
Authors:
D. S. L. Figueira,
N. C. Frateschi
Abstract:
Microdisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H<Er>) layers sandwiched in air and native SiO2 on Si substrates. Annealing condition is optimized to allow large emission at 1550 nm for samples with erbium concentrations as high as 1.02x10^20 atoms/cm3. Near field scanning optical microscopy shows evidences of the simultaneous presence…
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Microdisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H<Er>) layers sandwiched in air and native SiO2 on Si substrates. Annealing condition is optimized to allow large emission at 1550 nm for samples with erbium concentrations as high as 1.02x10^20 atoms/cm3. Near field scanning optical microscopy shows evidences of the simultaneous presence of bow-tie and diamond scars. These modes indicate the high quality of the resonators and the potentiality for achieving amorphous silicon microcavity lasers.
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Submitted 9 November, 2007;
originally announced November 2007.
