Octave-spanning supercontinuum generation in a CMOS-compatible thin Si3N4 waveguide coated with highly nonlinear TeO2
Authors:
Hamidu M. Mbonde,
Neetesh Singh,
Bruno L. Segat Frare,
Milan Sinobad,
Pooya Torab Ahmadi,
Batoul Hashemi,
Dawson. B. Bonneville,
Peter Mascher,
Franz X. Kaertner,
Jonathan D. B. Bradley
Abstract:
Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride(Si3N4) has emerged as a leading on-chip platform.To achieve suitable group velocity dispersion and high confinement for broadband SCG the Si3N4 waveguide layer used is typically thick (>~700 nm), which can lead to high stress and cracks unless…
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Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride(Si3N4) has emerged as a leading on-chip platform.To achieve suitable group velocity dispersion and high confinement for broadband SCG the Si3N4 waveguide layer used is typically thick (>~700 nm), which can lead to high stress and cracks unless specialized processing steps are used. Here, we report on efficient octave spanning SCG in a thinner moderate-confinement 400-nm Si3N4 platform using a highly nonlinear tellurium oxide (TeO2) coating. An octave-spanning supercontinuum is achieved at a low peak power of 258 W using a 100-fs laser centered at 1565 nm. Our numerical simulations agree well with the experimental results showing an increase of waveguide's nonlinear parameter by a factor of 2.5 when coating the Si3N4 waveguide with TeO2 film. This work demonstrates highly efficient SCG via effective dispersion engineering and an enhanced nonlinearity in a CMOS-compatible hybrid TeO2-Si3N4 waveguides and a promising route to monolithically integrated nonlinear, linear, and active functionalities on a single silicon photonic chip.
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Submitted 15 September, 2023;
originally announced September 2023.
Stimulated Brillouin scattering in tellurite-covered silicon nitride waveguides
Authors:
Roel A. Botter,
Yvan Klaver,
Randy te Morsche,
Bruno L. Segat Frare,
Batoul Hashemi,
Kaixuan Ye,
Akhileshwar Mishra,
Redlef B. G. Braamhaar,
Jonathan D. B. Bradley,
David Marpaung
Abstract:
Stimulated Brillouin scattering (SBS), a coherent nonlinear effect coupling acoustics and optics, can be used in a wide range of applications such as Brillouin lasers and tunable narrowband RF filtering. Wide adoption of such technologies however, would need a balance of strong Brillouin interaction and low optical loss in a structure compatible with large scale fabrication. Achieving these charac…
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Stimulated Brillouin scattering (SBS), a coherent nonlinear effect coupling acoustics and optics, can be used in a wide range of applications such as Brillouin lasers and tunable narrowband RF filtering. Wide adoption of such technologies however, would need a balance of strong Brillouin interaction and low optical loss in a structure compatible with large scale fabrication. Achieving these characteristics in scalable platforms such as silicon and silicon nitride remains a challenge. Here, we investigate a scalable Brillouin platform combining low loss Si$_3$N$_4$ and tellurium oxide (TeO$_2$) exhibiting strong Brillouin response and enhanced acoustic confinement. In this platform we measure a Brillouin gain coefficient of 8.5~m$^{-1}$W$^{-1}$, exhibiting a twenty fold improvement over the largest previously reported Brillouin gain in a Si$_3$N$_4$ platform. Further, we demonstrate cladding engineering to control the strength of the Brillouin interaction. We utilized the Brillouin gain and loss resonances in this waveguide for an RF photonic filter with more than 15 dB rejection and 250 MHz linewidth. Finally, we present a pathway by geometric optimization and cladding engineering to a further enhancement of the gain coefficient to 155~m$^{-1}$W$^{-1}$, a potential 400 times increase in the Brillouin gain coefficient.
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Submitted 24 July, 2023;
originally announced July 2023.