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Probing Hyperbolic and Surface Phonon-Polaritons in 2D materials using Raman Spectroscopy
Authors:
A. Bergeron,
C. Gradziel,
R. Leonelli,
S. Francoeur
Abstract:
The hyperbolic dispersion relation of phonon-polaritons (PhPol) provides high-momentum states, highly directional propagation, subdiffractional confinement, large optical density of states, and enhanced light-matter interactions. In this work, we use Raman spectroscopy in the convenient backscattering configuration to probe PhPol in GaSe, a 2D material presenting two hyperbolic regions separated b…
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The hyperbolic dispersion relation of phonon-polaritons (PhPol) provides high-momentum states, highly directional propagation, subdiffractional confinement, large optical density of states, and enhanced light-matter interactions. In this work, we use Raman spectroscopy in the convenient backscattering configuration to probe PhPol in GaSe, a 2D material presenting two hyperbolic regions separated by a \textit{double} reststrahlen band. By varying the incidence angle, dispersion relations are revealed. Raman spectra calculations confirm the observation of one surface and two extraordinary guided polaritons and matches the evolution of PhPol frequency as a function of confinement. Resonant excitation close to the excitonic state singularly exalts the scattering efficiency of PhPol. Raman spectroscopy of PhPol in non-centrosymmetry 2D materials does not require any wavevector matching strategies. Widely available, it may accelerate the development of MIR nanophotonic devices and applications.
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Submitted 28 August, 2022;
originally announced August 2022.
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Visible Out-of-plane Polarized Luminescence and Electronic Resonance from Black Phosphorus
Authors:
L. Schué,
F. A. Goudreault,
A. Righi,
G. C. Resende,
V. Lefebvre,
E. Godbout,
M. A. Pimenta,
M. Côté,
S. Francoeur,
R. Martel
Abstract:
Black Phosphorus (BP) is unique among layered materials owing to its homonuclear lattice and strong structural anisotropy. While recent investigations on few layers BP have extensively explored the in-plane (a,c) anisotropy, much less attention has been given to the out-of-plane direction (b). Here, the optical response from bulk BP is probed using polarization-resolved photoluminescence (PL), pho…
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Black Phosphorus (BP) is unique among layered materials owing to its homonuclear lattice and strong structural anisotropy. While recent investigations on few layers BP have extensively explored the in-plane (a,c) anisotropy, much less attention has been given to the out-of-plane direction (b). Here, the optical response from bulk BP is probed using polarization-resolved photoluminescence (PL), photoluminescence excitation (PLE) and resonant Raman scattering along the zigzag, out-of-plane, and armchair directions. PL reveals an unexpected b-polarized emission occurring in the visible at 1.75 eV, far above the fundamental gap (0.3 eV). PLE indicates that this emission is generated through b-polarized excitation at 2.3 eV. The same electronic resonance is observed in resonant Raman scans, where the scattering efficiency of both Ag phonon modes is enhanced. These experimental results are fully consistent with DFT calculations of the permittivity tensor elements and demonstrate the remarkable extent to which the anisotropy influences the optical properties and carrier dynamics in black phosphorus.
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Submitted 23 December, 2021;
originally announced December 2021.
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Disentangling Phonon Channels in Nanoscale Thermal Transport
Authors:
Samik Mukherjee,
Marcin Wajs,
Maria de la Mata,
Uri Givan,
Stephan Senz,
Jordi Arbiol,
Sebastien Francoeur,
Oussama Moutanabbir
Abstract:
Phonon surface scattering has been at the core of heat transport engineering in nanoscale structures and devices. Herein, we demonstrate that this phonon pathway can be the sole mechanism only below a characteristic, size-dependent temperature. Above this temperature, the lattice phonon scattering co-exist along with surface effects. By artificially controlling mass disorder and lattice dynamics a…
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Phonon surface scattering has been at the core of heat transport engineering in nanoscale structures and devices. Herein, we demonstrate that this phonon pathway can be the sole mechanism only below a characteristic, size-dependent temperature. Above this temperature, the lattice phonon scattering co-exist along with surface effects. By artificially controlling mass disorder and lattice dynamics at the atomic-level in nanowires without affecting morphology, crystallinity, chemical composition, and electronic properties, the temperature-thermal conductivity-diameter triple parameter space is mapped, and the main phonon scattering mechanisms are disentangled. This led to the identification of the critical temperature at which the effect of lattice mass-disorder on thermal conductivity is suppressed to an extent that phonon transport becomes governed entirely by the surface. This behavior is discussed based on Landauer-Dutta-Lundstrom near-equilibrium transport model. The established framework provides the necessary input to further advance the design and modelling of phonon and heat transport in semiconductor nanoscale systems.
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Submitted 8 July, 2020;
originally announced July 2020.
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Mid-infrared polarized emission from black phosphorus light-emitting diodes
Authors:
Junjia Wang,
Adrien Rousseau,
Mei Yang,
Tony Low,
Sébastien Francoeur,
Stéphane Kéna-Cohen
Abstract:
The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there exists transparency windows in the atmosphere such as that between 3.6-3.8 $μ$m, which are ideal for free-space optical communication, range finding and therma…
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The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there exists transparency windows in the atmosphere such as that between 3.6-3.8 $μ$m, which are ideal for free-space optical communication, range finding and thermal imaging. A number of different semiconductor platforms have been used for MIR light-emission. This includes InAsSb/InAs quantum wells, InSb/AlInSb, GaInAsSbP pentanary alloys, and intersubband transitions in group III-V compounds. These approaches, however, are costly and lack the potential for integration on silicon and silicon-on-insulator platforms. In this respect, two-dimensional (2D) materials are particularly attractive due to the ease with which they can be heterointegrated. Weak interactions between neighbouring atomic layers in these materials allows for deposition on arbitrary substrates and van der Waals heterostructures enable the design of devices with targeted optoelectronic properties. In this Letter, we demonstrate a light-emitting diode (LED) based on the 2D semiconductor black phosphorus (BP). The device, which is composed of a BP/molybdenum disulfide (MoS$_2$) heterojunction emits polarized light at $λ$ = 3.68 $μ$m with room-temperature internal and external quantum efficiencies (IQE and EQE) of ~1$\%$ and $\sim3\times10^{-2}\%$, respectively. The ability to tune the bandgap, and consequently emission wavelength of BP, with layer number, strain and electric field make it a particularly attractive platform for MIR emission.
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Submitted 20 November, 2019;
originally announced November 2019.
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Spectral responsivity and photoconductive gain in thin film black phosphorus photodetectors
Authors:
Junjia Wang,
Adrien Rousseau,
Elad Eizner,
Anne-Laurence Phaneuf-L'Heureux,
Léonard Schue,
Sébastien Francoeur,
Stéphane Kéna-Cohen
Abstract:
We have fabricated black phosphorus photodetectors and characterized their full spectral responsivity. These devices, which are effectively in the bulk thin film limit, show broadband responsivity ranging from <400 nm to the ~3.8 $μ$m bandgap. In the visible, an intrinsic responsivity >7 A/W can be obtained due to internal gain mechanisms. By examining the full spectral response, we identify a sha…
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We have fabricated black phosphorus photodetectors and characterized their full spectral responsivity. These devices, which are effectively in the bulk thin film limit, show broadband responsivity ranging from <400 nm to the ~3.8 $μ$m bandgap. In the visible, an intrinsic responsivity >7 A/W can be obtained due to internal gain mechanisms. By examining the full spectral response, we identify a sharp contrast between the visible and infrared behavior. In particular, the visible responsivity shows a large photoconductive gain and gate-voltge dependence, while the infrared responsivity is nearly independent of gate voltage and incident light intensity under most conditions. This is attributed to a contribution from the surface oxide. In addition, we find that the polarization anisotropy in responsivity along armchair and zigzag directions can be as large as 103 and extends from the band edge to 500 nm. The devices were fabricated in an inert atmosphere and encapsulated by Al$_2$O$_3$ providing stable operation for more than 6 months.
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Submitted 25 June, 2019;
originally announced June 2019.
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Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy
Authors:
Alaric Bergeron,
John Ibrahim,
Richard Leonelli,
Sébastien Francoeur
Abstract:
Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this work, we monitor the oxidation dynamics of GaSe with thicknesses ranging from 10 to 200 nm using Raman spectroscopy. In ambient temperature and humidity condition…
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Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this work, we monitor the oxidation dynamics of GaSe with thicknesses ranging from 10 to 200 nm using Raman spectroscopy. In ambient temperature and humidity conditions, the intensity of all Raman modes and the luminescence decrease rapidly with moderate exposure to above-gap illumination. Concurrently, several oxidation products appear in the Raman spectra: Ga$_2$Se$_3$, Ga$_2$O$_3$ and amorphous and crystalline selenium. We find that no safe measurement power exists for optical measurements on ultrathin GaSe in ambient conditions. We demonstrate that the simultaneous presence of oxygen, humidity, and above-gap illumination is required to activate this photo-oxidation process, which is attributed to the transfer of photo-generated charge carriers towards aqueous oxygen at the sample surface, generating highly reactive superoxide anions that rapidly degrade the sample and quench the optical response of the material.
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Submitted 12 June, 2017; v1 submitted 20 December, 2016;
originally announced December 2016.
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High-Fidelity and Ultrafast Initialization of a Hole Spin Bound to a Te Isoelectronic Center in ZnS
Authors:
Philippe St-Jean,
Gabriel Éthier-Majcher,
Régis André,
Sébastien Francoeur
Abstract:
We demonstrate the optical initialization of a hole-spin qubit bound to an isoelectronic center (IC) formed by a pair of Te impurities in ZnSe, an impurity/host system providing high optical homogeneity, large electric dipole moments, and long coherence times. The initialization scheme is based on the spin-preserving tunneling of a resonantly excited donor-bound exciton to a positively charged Te…
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We demonstrate the optical initialization of a hole-spin qubit bound to an isoelectronic center (IC) formed by a pair of Te impurities in ZnSe, an impurity/host system providing high optical homogeneity, large electric dipole moments, and long coherence times. The initialization scheme is based on the spin-preserving tunneling of a resonantly excited donor-bound exciton to a positively charged Te IC, thus forming a positive trion. The radiative decay of the trion within less than 50 ps leaves a heavy hole in a well-defined polarization-controlled spin state. The initialization fidelity exceeds 98:5 % for an initialization time of less than 150 ps.
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Submitted 14 October, 2016; v1 submitted 10 June, 2016;
originally announced June 2016.
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Taking advantage of light- and heavy-hole trions for optical spin initialization, control and readout
Authors:
G. Éthier-Majcher,
P. St-Jean,
S. Francoeur
Abstract:
Optical control strategies in semiconductor nanostructures have almost exclusively relied on heavy-hole exciton and trion states. In the first part of this letter, we show that light-hole trions provide the missing ressource for consolidating all single qubit operations in a mutually compatible magnetic field configuration: electron spin initialization and control can be achieved through light-hol…
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Optical control strategies in semiconductor nanostructures have almost exclusively relied on heavy-hole exciton and trion states. In the first part of this letter, we show that light-hole trions provide the missing ressource for consolidating all single qubit operations in a mutually compatible magnetic field configuration: electron spin initialization and control can be achieved through light-hole trion states and cycling transition is provided by heavy-hole trion states. In the second part, we experimentally demonstrate that pairs of nitrogen atoms in GaAs exhibiting a Cs symmetry bind both light- and heavy-hole excitons and negative trions. A detailed analysis of the fine structure reveals that that trion states provide the lambda level structure necessary for fast initialization and control along with energetically-protected cycling transition compatible with single-shot readout.
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Submitted 15 June, 2015;
originally announced June 2015.
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Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects
Authors:
A. Favron,
E. Gaufrès,
F. Fossard,
P. L. Lévesque,
A-L. Phaneuf-L'Heureux,
N. Y-W. Tang,
A. Loiseau,
R. Leonelli,
S. Francoeur,
R. Martel
Abstract:
Thin layers of black phosphorus have recently raised interest for their two-dimensional (2D) semiconducting properties, such as tunable direct bandgap and high carrier mobilities. This lamellar crystal of P atoms stacked together by weak van der Waals forces can be exfoliated down to the stratophosphane monolayer (also called phosphorene) using procedures similar to those used for graphene. Proper…
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Thin layers of black phosphorus have recently raised interest for their two-dimensional (2D) semiconducting properties, such as tunable direct bandgap and high carrier mobilities. This lamellar crystal of P atoms stacked together by weak van der Waals forces can be exfoliated down to the stratophosphane monolayer (also called phosphorene) using procedures similar to those used for graphene. Properties of this 2D material are however challenging to probe due to a fast and ubiquitous degradation upon exposure to ambient conditions. Herein, we investigate the crystal degradation using in-situ Raman and transmission electron spectroscopies and highlight a process involving a photo-induced oxidation reaction with adsorbed oxygen in water. The experimental conditions to prepare and preserve mono-, bi- and multilayers of stratophosphane in their pristine states were determined. Study on these 2D layers provides new insights on the effect of confinement on the chemical reactivity and the vibrational modes of black phosphorus.
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Submitted 21 August, 2014; v1 submitted 2 August, 2014;
originally announced August 2014.
