-
Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2$
Authors:
C. J. Sayers,
L. S. Farrar,
S. J. Bending,
M. Cattelan,
A. J. H. Jones,
N. A. Fox,
G. Kociok-Köhn,
K. Koshmak,
J. Laverock,
L. Pasquali,
E. Da Como
Abstract:
We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $<$ 630$^{\circ}$C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measure…
▽ More
We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $<$ 630$^{\circ}$C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy (XPS), we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultra-high purity 1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ = (112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1$T$-VSe$_{2}$ to defects and overall stoichiometry, and the importance of controlling the crystal growth conditions of strongly-correlated transition metal dichalcogenides.
△ Less
Submitted 11 February, 2020; v1 submitted 22 January, 2020;
originally announced January 2020.
-
Epitaxial UN and $α$-U$_2$N$_3$ Thin Films
Authors:
E. Lawrence Bright,
S. Rennie,
M. Cattelan,
N. A. Fox,
D. T. Goddard,
R. Springell
Abstract:
Single crystal epitaxial thin films of UN and U$_2$N$_3$ have been grown for the first time by reactive DC magnetron sputtering. These films provide ideal samples for fundamental research into the potential accident tolerant fuel, UN, and U$_2$N$_3$, its intermediate oxidation product. Films were characterised using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS), with XRD analy…
▽ More
Single crystal epitaxial thin films of UN and U$_2$N$_3$ have been grown for the first time by reactive DC magnetron sputtering. These films provide ideal samples for fundamental research into the potential accident tolerant fuel, UN, and U$_2$N$_3$, its intermediate oxidation product. Films were characterised using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS), with XRD analysis showing both thin films to be [001] oriented and composed of a single domain. The specular lattice parameters of the UN and U$_2$N$_3$ films were found to be 4.895\,Å and 10.72\,Å, respectively, with the UN film having a miscut of 2.6\,$^\circ$. XPS showed significant differences in the N-1s peak between the two films, with area analysis showing both films to be stoichiometric.
△ Less
Submitted 6 March, 2018;
originally announced March 2018.
-
Characterisation of p-type ZnS:Cu transparent conducting films fabricated by high-temperature pulsed laser deposition
Authors:
Katherine S. Duncan,
Joseph D. Taylor,
Martin Jonak,
Kayleigh O. E. Derricutt,
Alexander G. J. Tallon,
Christopher E. Wilshaw,
James A. Smith,
Neil A. Fox
Abstract:
Copper-doped zinc sulphide (ZnS:Cu) thin films were synthesized through pulsed laser ablation in an inert background gas on stationary and rotating substrates, and a comprehensive opto-electrical characterisation is presented. The Cu$_x$Zn$_{1-x}$S films demonstrated comparable conductivity and transparency to other leading p-type transparent conducting materials, with a peak conductivity of 49.0…
▽ More
Copper-doped zinc sulphide (ZnS:Cu) thin films were synthesized through pulsed laser ablation in an inert background gas on stationary and rotating substrates, and a comprehensive opto-electrical characterisation is presented. The Cu$_x$Zn$_{1-x}$S films demonstrated comparable conductivity and transparency to other leading p-type transparent conducting materials, with a peak conductivity of 49.0 Scm$^{-1}$ and a hole mobility of 1.22 cm$^2$V$^{-1}$s$^{-1}$ for films alloyed with an x = 0.33 copper content. The most conducting films displayed a transparency of 71.8$\%$ over the visible range at a thickness of 100 nm, and band gaps were found in the range 3.22-3.52 eV, which showed a strong negative correlation with copper content. The effects of sulphur-rich rapid thermal annealing on the synthesized compound are reported, with films reliably displaying an increase in conductivity and carrier mobility. Films grown using a stationary substrate possessed large spatial thickness distributions and displayed sub-band gap absorption, which is discussed with respect to inhomogeneous copper substitution. Films deposited at 450$^\circ$C were found to be in the zincblende phase before and after annealing, with no occurrence of a phase change to wurtzite structure.
△ Less
Submitted 20 November, 2017;
originally announced November 2017.
-
Ultra-Thin Metal Films for Enhanced Solar Absorption
Authors:
N. Ahmad,
J. Stokes,
N. A. Fox,
M. Teng,
M. J. Cryan
Abstract:
This paper presents modelled results for optical absorption in ultra-thin films of nickel, gold and silver across the solar spectrum. It is found in the case of nickel there is an optimum thickness for maximum solar absorption around 10-13nm. It is believed that this is a result of the real and imaginary parts of its refractive index being of similar magnitude across the solar spectrum which can g…
▽ More
This paper presents modelled results for optical absorption in ultra-thin films of nickel, gold and silver across the solar spectrum. It is found in the case of nickel there is an optimum thickness for maximum solar absorption around 10-13nm. It is believed that this is a result of the real and imaginary parts of its refractive index being of similar magnitude across the solar spectrum which can give rise to very strong thin film absorption.
△ Less
Submitted 7 March, 2012; v1 submitted 29 February, 2012;
originally announced February 2012.
