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Deterministic multi-level spin orbit torque switching using He+ microscopy patterning
Authors:
**u Kurian,
Aleena Joseph,
Salia Cherifi-Hertel,
Ciaran Fowley,
Gregor Hlawacek,
Peter Dunne,
Michelangelo Romeo,
Gwenaël Atcheson,
J. M. D. Coey,
Bernard Doudin
Abstract:
He$^+$ ion irradiation is used to pattern multiple areas of Pt/Co/W films with different irradiation doses in Hall bars. The resulting perpendicular magnetic anisotropy landscape enables selective multilevel current-induced switching, with full deterministic control of the position and order of the individual switching elements. Key pattern design parameters are specified, opening a way to scalabl…
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He$^+$ ion irradiation is used to pattern multiple areas of Pt/Co/W films with different irradiation doses in Hall bars. The resulting perpendicular magnetic anisotropy landscape enables selective multilevel current-induced switching, with full deterministic control of the position and order of the individual switching elements. Key pattern design parameters are specified, opening a way to scalable multilevel switching devices.
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Submitted 4 January, 2023;
originally announced January 2023.
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Wafer-scale nanofabrication of telecom single-photon emitters in silicon
Authors:
M. Hollenbach,
N. Klingner,
N. S. Jagtap,
L. Bischoff,
C. Fowley,
U. Kentsch,
G. Hlawacek,
A. Erbe,
N. V. Abrosimov,
M. Helm,
Y. Berencén,
G. V. Astakhov
Abstract:
A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been re…
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A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.
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Submitted 27 April, 2022;
originally announced April 2022.
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A photonic platform hosting telecom photon emitters in silicon
Authors:
Michael Hollenbach,
Nagesh S. Jagtap,
Ciarán Fowley,
Juan Baratech,
Verónica Guardia-Arce,
Ulrich Kentsch,
Anna Eichler-Volf,
Nikolay V. Abrosimov,
Artur Erbe,
ChaeHo Shin,
Hakseong Kim,
Manfred Helm,
Woo Lee,
Georgy V. Astakhov,
Yonder Berencén
Abstract:
Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a…
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Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.
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Submitted 5 December, 2021;
originally announced December 2021.
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Spin polarization and magnetotransport properties of systematically disordered $\mathrm{Fe}_{60}\mathrm{Al}_{40}$ thin films
Authors:
Kiril Borisov,
Jonathan Ehrler,
Ciaran Fowley,
Benedikt Eggert,
Heiko Wende,
Steffen Cornelius,
Kay Potzger,
Juergen Lindner,
Juergen Fassbender,
Rantej Bali,
Plamen Stamenov
Abstract:
We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion irradiation. The spin polarization increases monotonically as a function of ion fluence. A relatively high polarization of 46 % and the SHA of 3.1 % are achieved on 40 n…
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We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion irradiation. The spin polarization increases monotonically as a function of ion fluence. A relatively high polarization of 46 % and the SHA of 3.1 % are achieved on 40 nm thick films irradiated with 2 $\cdot$ 10$^{16}$ ions/cm$^2$ at 30 keV. An interesting divergence in the trends of the magnetization and SHA is observed for low disorder concentrations. The high spin polarization and its broad tunability range make ion-irradiated Fe$_{60}$Al$_{40}$ a promising material for application in spin electronic devices.
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Submitted 30 April, 2021;
originally announced April 2021.
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Magnetization dynamics in synthetic antiferromagnets: Role of dynamical energy and mutual spin pum**
Authors:
S. Sorokin,
R. A. Gallardo,
C. Fowley,
K. Lenz,
A. Titova,
G. Y. P Atcheson,
G. Dennehy,
K. Rode,
J. Fassbender,
J. Lindner,
A. M. Deac
Abstract:
We investigate magnetization dynamics in asymmetric interlayer exchange coupled Py/Ru/Py trilayers using both vector network analyzer-based and electrically detected ferromagnetic resonance techniques. Two different ferromagnetic resonance modes, in-phase and out-of-phase, are observed across all three regimes of the static magnetization configurations, through antiparallel alignment at low fields…
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We investigate magnetization dynamics in asymmetric interlayer exchange coupled Py/Ru/Py trilayers using both vector network analyzer-based and electrically detected ferromagnetic resonance techniques. Two different ferromagnetic resonance modes, in-phase and out-of-phase, are observed across all three regimes of the static magnetization configurations, through antiparallel alignment at low fields, the spin-flop transition at intermediate fields, and parallel alignment at high fields. The nonmonotonic behavior of the modes as a function of the external field is explained in detail by analyzing the interlayer exchange and Zeeman energies and is found to be solely governed by the interplay of their dynamical components. In addition, the linewidths of both modes were determined across the three regimes and the different behaviors of the linewidths versus external magnetic field are attributed to mutual spin pum** induced in the samples. Interestingly, the difference between the linewidths of the out-of-phase and in-phase modes decreases at the spin-flop transition and is reversed between the antiparallel and parallel aligned magnetization states.
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Submitted 23 June, 2020;
originally announced June 2020.
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Helium Ion Microscopy for Reduced Spin Orbit Torque Switching Currents
Authors:
Peter Dunne,
Ciaran Fowley,
Gregor Hlawacek,
**u Kurian,
Gwenaël Atcheson,
Silviu Colis,
Niclas Teichert,
Bohdan Kundys,
M. Venkatesan,
Jürgen Lindner,
Alina Maria Deac,
Thomas M. Hermans,
J. M. D. Coey,
Bernard Doudin
Abstract:
Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here we demonstrate how focused helium ion beam irradiation c…
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Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here we demonstrate how focused helium ion beam irradiation can modulate the local magnetic anisotropy of a Co thin film at the microscopic scale. Real-time in-situ characterisation using the anomalous Hall effect showed up to an order of magnitude reduction of the magnetic anisotropy under irradiation, and using this, multi-level switching is demonstrated. The result is that spin-switching current densities, down to 800 kA cm$^{-2}$, can be achieved on predetermined areas of the film, without the need for lithography. The ability to vary critical currents spatially has implications not only for storage elements, but also neuromorphic and probabilistic computing.
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Submitted 14 September, 2020; v1 submitted 15 May, 2020;
originally announced May 2020.
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Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces
Authors:
Oğuz Yıldırım,
Donovan Hilliard,
Sri Sai Phani Kanth Arekapudi,
Ciarán Fowley,
Hamza Cansever,
Leopold Koch,
Lakshmi Ramasubramanian,
Shengqiang Zhou,
Roman Böttger,
Jürgen Lindner,
Jürgen Faßbender,
Olav Hellwig,
Alina M. Deac
Abstract:
Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layers offer unique properties due to spin-orbit coupling and symmetry breaking, yielding effects such as exchange bias, perpendicular magnetic anisotropy, spin-pum**, spin-transfer torques, conversion between charge and spin currents and vice-versa. These interfacial phenomena play crucial roles for magnetic data storage and…
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Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layers offer unique properties due to spin-orbit coupling and symmetry breaking, yielding effects such as exchange bias, perpendicular magnetic anisotropy, spin-pum**, spin-transfer torques, conversion between charge and spin currents and vice-versa. These interfacial phenomena play crucial roles for magnetic data storage and transfer applications, which require forming FM nano-structures embedded in non-ferromagnetic matrices. Here, we investigate the possiblity of creating such nano-structures by ion-irradiation. We study the effect of lateral confinement on the ion-irradiation-induced reduction of non-magnetic metal oxides (e.g., antiferro- or paramagnetic) to form ferromagnetic metals. Our findings are later exploited to form 3-dimensional magnetic interfaces between Co, CoO and Pt by spatially-selective irradiation of CoO/Pt multilayers. We demonstrate that the mechanical displacement of the O atoms plays a crucial role during the reduction from insulating, non-ferromagnetic cobalt oxides to metallic cobalt. Metallic cobalt yields both perpendicular magnetic anisotropy in the generated Co/Pt nano-structures, and, at low temperatures, exchange bias at vertical interfaces between Co and CoO. If pushed to the limit of ion-irradiation technology, this approach could, in principle, enable the creation of densely-packed, atomic scale ferromagnetic point-contact spin-torque oscillator (STO) networks, or conductive channels for current-confined-path based current perpendicular-to-plane giant magnetoresistance read-heads.
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Submitted 19 February, 2020;
originally announced February 2020.
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Spin-transfer dynamics in MgO-based magnetic tunnel junctions with an out-of-plane magnetized free layer and an in-plane polarizer
Authors:
Ewa Kowalska,
Volker Sluka,
Attila Kákay,
Ciarán Fowley,
Jürgen Lindner,
Jürgen Fassbender,
Alina M. Deac
Abstract:
Here, we present an analytical and numerical model describing the magnetization dynamics in MgO-based spin-torque nano-oscillators with an in-plane magnetized polarizer and an out-of-plane free layer. We introduce the spin-transfer torque asymmetry by considering the cosine angular dependence of the resistance between the two magnetic layers in the stack. For the analytical solution, dynamics are…
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Here, we present an analytical and numerical model describing the magnetization dynamics in MgO-based spin-torque nano-oscillators with an in-plane magnetized polarizer and an out-of-plane free layer. We introduce the spin-transfer torque asymmetry by considering the cosine angular dependence of the resistance between the two magnetic layers in the stack. For the analytical solution, dynamics are determined by assuming a circular precession trajectory around the direction perpendicular to the plane, as set by the effective field, and calculating the energy integral over a single precession period. In a more realistic approach, we include the bias dependence of the tunnel magnetoresistance, which is assumed empirically to be a piecewise linear function of the applied voltage. The dynamical states are found by solving the stability condition for the Jacobian matrix for out-of-plane static states. We find that the bias dependence of the tunnel magnetoresistance, which is an inseparable effect in every tunnel junction, exhibits drastic impact on the spin-torque nano-oscillator phase diagram, mainly by increasing the critical current for dynamics and quenching the oscillations at high currents. The results are in good agreement with our experimental data published elsewhere.
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Submitted 24 September, 2019;
originally announced September 2019.
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Zero-field dynamics stabilized by in-plane shape anisotropy in MgO-based spin-torque oscillators
Authors:
Ewa Kowalska,
Attila Kákay,
Ciarán Fowley,
Volker Sluka,
Jürgen Lindner,
Jürgen Fassbender,
Alina M. Deac
Abstract:
Here we demonstrate numerically that shape anisotropy in MgO-based spin-torque nano-oscillators consisting of an out-of-plane magnetized free layer and an in-plane polarizer is necessary to stabilize out-of-plane magnetization precession without the need of external magnetic fields. As the in-plane anisotropy is increased, a gradual tilting of the magnetization towards the in-plane easy direction…
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Here we demonstrate numerically that shape anisotropy in MgO-based spin-torque nano-oscillators consisting of an out-of-plane magnetized free layer and an in-plane polarizer is necessary to stabilize out-of-plane magnetization precession without the need of external magnetic fields. As the in-plane anisotropy is increased, a gradual tilting of the magnetization towards the in-plane easy direction is introduced, favouring zero-field dynamics over static in-plane states. Above a critical value, zero-field dynamics are no longer observed. The optimum ratio of in-plane shape to out-of-plane uniaxial anisotropy, for which large angle out-of-plane zero-field dynamics occur within the widest current range, is reported.
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Submitted 5 October, 2018;
originally announced November 2018.
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Magnetocrystalline anisotropy and exchange probed by high-field anomalous Hall effect in fully-compensated half-metallic Mn2RuxGa thin films
Authors:
Ciarán Fowley,
Karsten Rode,
Yong-Chang Lau,
Naganivetha Thiyagarajah,
Davide Betto,
Kiril Borisov,
Gwenael Atcheson,
Erik Kampert,
Zhaosheng Wang,
Ye Yuan,
Shengqiang Zhou,
Jürgen Lindner,
Plamen Stamenov,
J. M. D. Coey,
Alina Maria Deac
Abstract:
Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation temperature 155 K, where the net magnetic moment is strictly zero, the anomalous Hall conductivity is 6673 $Ω^{-1}.m^{-1}$ and the coercivity exceeds 9 T. Molecular f…
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Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation temperature 155 K, where the net magnetic moment is strictly zero, the anomalous Hall conductivity is 6673 $Ω^{-1}.m^{-1}$ and the coercivity exceeds 9 T. Molecular field modelling is used to determine the intra- and inter-sublattice exchange constants and from the spin-flop transition we infer the anisotropy of the electrically active sublattice to be 216 kJ/m$^3$ and predict the magnetic resonances frequencies. Exchange and anisotropy are comparable and hard-axis applied magnetic fields result in a tilting of the magnetic moments from their collinear ground state. Our analysis is applicable to collinear ferrimagnetic half-metal systems.
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Submitted 2 October, 2018;
originally announced October 2018.
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Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication
Authors:
Ewa Kowalska,
Akio Fukushima,
Volker Sluka,
Ciarán Fowley,
Attila Kákay,
Yuriy Aleksandrov,
Jürgen Lindner,
Jürgen Fassbender,
Shinji Yuasa,
Alina M. Deac
Abstract:
Spin-transfer torques (STTs) can be exploited in order to manipulate the magnetic moments of nanomagnets, thus allowing for new consumer-oriented devices to be designed. Of particular interest here are tuneable radio-frequency (RF) oscillators for wireless communication. Currently, the structure that maximizes the output power is an Fe/MgO/Fe-type magnetic tunnel junction (MTJ) with a fixed layer…
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Spin-transfer torques (STTs) can be exploited in order to manipulate the magnetic moments of nanomagnets, thus allowing for new consumer-oriented devices to be designed. Of particular interest here are tuneable radio-frequency (RF) oscillators for wireless communication. Currently, the structure that maximizes the output power is an Fe/MgO/Fe-type magnetic tunnel junction (MTJ) with a fixed layer magnetized in the plane of the layers and a free layer magnetized perpendicular to the plane. This structure allows for most of the tunnel magnetoresistance (TMR) to be converted into output power. Here, we experimentally and theoretically demonstrate that the main mechanism sustaining steady-state precession in such structures is the angular dependence of the magnetoresistance. The TMR of such devices is known to exhibit a broken-linear dependence versus the applied bias. Our results show that the TMR bias dependence effectively quenches spin-transfer-driven precession and introduces a non-monotonic frequency dependence at high applied currents. Thus we expect the bias dependence of the TMR to have an even more dramatic effect in MTJs with Mn-Ga-based free layers, which could be used to design wireless oscillators extending towards the THz gap, but have been experimentally shown to exhibit a non-trivial TMR bias dependence.
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Submitted 17 August, 2018;
originally announced August 2018.
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Direct measurement of the magnetic anisotropy field in Mn--Ga and Mn--Co--Ga Heusler films
Authors:
Ciarán Fowley,
Siham Ouardi,
Takahide Kubota,
Yildirim Oguz,
Andreas Neudert,
Kilian Lenz,
Volker Sluka,
Jürgen Lindner,
Joseph M. Law,
Shigemi Mizukami,
Gerhard H. Fecher,
Claudia Felser,
and Alina M. Deac
Abstract:
The static and dynamic magnetic properties of tetragonally distorted Mn--Ga based alloys were investigated. Static properties are determined in magnetic fields up to 6.5~T using SQUID magnetometry. For the pure Mn$_{1.6}$Ga film, the saturation magnetisation is 0.36~MA/m and the coercivity is 0.29~T. Partial substitution of Mn by Co results in Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$. The saturation magneti…
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The static and dynamic magnetic properties of tetragonally distorted Mn--Ga based alloys were investigated. Static properties are determined in magnetic fields up to 6.5~T using SQUID magnetometry. For the pure Mn$_{1.6}$Ga film, the saturation magnetisation is 0.36~MA/m and the coercivity is 0.29~T. Partial substitution of Mn by Co results in Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$. The saturation magnetisation of those films drops to 0.2~MA/m and the coercivity is increased to 1~T.
Time-resolved magneto-optical Kerr effect (TR-MOKE) is used to probe the high-frequency dynamics of Mn--Ga. The ferromagnetic resonance frequency extrapolated to zero-field is found to be 125~GHz with a Gilbert dam**, $α$, of 0.019. The anisotropy field is determined from both SQUID and TR-MOKE to be 4.5~T, corresponding to an effective anisotropy density of 0.81~MJ/m$^3$.
Given the large anisotropy field of the Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$ film, pulsed magnetic fields up to 60~T are used to determine the field strength required to saturate the film in the plane. For this, the extraordinary Hall effect was employed as a probe of the local magnetisation. By integrating the reconstructed in--plane magnetisation curve, the effective anisotropy energy density for Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$ is determined to be 1.23~MJ/m$^3$.
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Submitted 16 January, 2015;
originally announced January 2015.
