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Do**-induced superconductivity in the van der Waals superatomic crystal Re$_6$Se$_8$Cl$_2$
Authors:
Evan J. Telford,
Jake C. Russell,
Joshua R. Swann,
Brandon Fowler,
Xiaoman Wang,
Kihong Lee,
Amirali Zangiabadi,
Kenji Watanabe,
Takashi Taniguchi,
Colin Nuckolls,
Patrick Batail,
Xiaoyang Zhu,
Jonathan A. Malen,
Cory R. Dean,
Xavier Roy
Abstract:
Superatomic crystals are composed of discrete modular clusters that emulate the role of atoms in traditional atomic solids$^{1-4}$. Owing to their unique hierarchical structures, these materials are promising candidates to host exotic phenomena, such as superconductivity and magnetism that can be revealed through do**$^{5-10}$. Low-dimensional superatomic crystals hold great promise as electroni…
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Superatomic crystals are composed of discrete modular clusters that emulate the role of atoms in traditional atomic solids$^{1-4}$. Owing to their unique hierarchical structures, these materials are promising candidates to host exotic phenomena, such as superconductivity and magnetism that can be revealed through do**$^{5-10}$. Low-dimensional superatomic crystals hold great promise as electronic components$^{11,12}$, enabling these properties to be applied to nanocircuits, but the impact of do** in such compounds remains unexplored. Here we report the electrical transport properties of Re$_6$Se$_8$Cl$_2$, a two-dimensional superatomic semiconductor$^{13,14}$. Using an in situ current annealing technique, we find that this compound can be n-doped through Cl dissociation, drastically altering the transport behaviour from semiconducting to metallic and giving rise to superconductivity below $\sim$ 9 K. This work is the first example of superconductivity in a van der Waals (vdW) superatomic crystal; more broadly, it establishes a new chemical strategy to manipulate the electronic properties of vdW materials with labile ligands.
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Submitted 25 June, 2019;
originally announced June 2019.
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Metal-Insulator Transition in a Low-Mobility Two-Dimensional Electron System
Authors:
Dragana Popovic,
A. B. Fowler,
S. Washburn
Abstract:
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator transition (MIT): the single-parameter scaling of conductivity with temperature near a critical electron density. We obtain the scaling function $β$, which determ…
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We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator transition (MIT): the single-parameter scaling of conductivity with temperature near a critical electron density. We obtain the scaling function $β$, which determines the length (or temperature) dependence of the conductance. $β$ is smooth and monotonic, and linear in the logarithm of the conductance near the MIT, in agreement with the scaling theory for interacting systems.
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Submitted 21 August, 1997;
originally announced August 1997.
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Comment on ``Electric Field Scaling at B=0 Metal-Insulator Transition in Two Dimensions''
Authors:
K. Ismail,
J. O. Chu,
Dragana Popovic,
A. B. Fowler,
S. Washburn
Abstract:
In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The transition observed in these samples occurs at relatively low electron densities $n_{s}\sim (1-2)\times 10^{11}cm^{-2}$ and high disorder $σ_{c}\sim e^{2}/2h$. We…
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In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The transition observed in these samples occurs at relatively low electron densities $n_{s}\sim (1-2)\times 10^{11}cm^{-2}$ and high disorder $σ_{c}\sim e^{2}/2h$. We present evidence for a 2D MIT in a structure where the disorderis about two orders of magnitude weaker than in Si MOSFETs. The MIT occurs in the same range of $n_s$ Providing very strong evidence that the 2D MIT in Si-based devices is caused by electron-electron interactions.
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Submitted 6 July, 1997;
originally announced July 1997.
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Minimum Metallic Mobility in a Two-Dimensional Electron Gas
Authors:
Dragana Popovic,
A. B. Fowler,
S. Washburn
Abstract:
We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the mobility was high enough ($μ~> 1 m^2/Vs$), consistent with the assertion that this transition is driven by electron-electron interactions. In a perpendicular magneti…
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We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the mobility was high enough ($μ~> 1 m^2/Vs$), consistent with the assertion that this transition is driven by electron-electron interactions. In a perpendicular magnetic field, the magnetoconductance is positive in the vicinity of the transition, but negative elsewhere. Our experiment suggests that such behavior results from a decrease of the spin-dependent part of the interaction in the vicinity of the transition.
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Submitted 30 April, 1997;
originally announced April 1997.
