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TVB C++: A Fast and Flexible Back-End for The Virtual Brain
Authors:
Ignacio Martín,
Gorka Zamora,
Jan Fousek,
Michael Schirner,
Petra Ritter,
Viktor Jirsa,
Gustavo Deco,
Gustavo Patow
Abstract:
This paper introduces TVB C++, a streamlined and fast C++ Back-End for The Virtual Brain (TVB), a renowned platform and a benchmark tool for full-brain simulation. TVB C++ is engineered with speed as a primary focus while retaining the flexibility and ease of use characteristic of the original TVB platform. Positioned as a complementary tool, TVB serves as a prototy** platform, whereas TVB C++ b…
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This paper introduces TVB C++, a streamlined and fast C++ Back-End for The Virtual Brain (TVB), a renowned platform and a benchmark tool for full-brain simulation. TVB C++ is engineered with speed as a primary focus while retaining the flexibility and ease of use characteristic of the original TVB platform. Positioned as a complementary tool, TVB serves as a prototy** platform, whereas TVB C++ becomes indispensable when performance is paramount, particularly for large-scale simulations and leveraging advanced computation facilities like supercomputers. Developed as a TVB-compatible Back-End, TVB C++ seamlessly integrates with the original TVB implementation, facilitating effortless usage. Users can easily configure TVB C++ to execute the same code as in TVB but with enhanced performance and parallelism capabilities.
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Submitted 25 June, 2024; v1 submitted 29 May, 2024;
originally announced May 2024.
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Brain Modelling as a Service: The Virtual Brain on EBRAINS
Authors:
Michael Schirner,
Lia Domide,
Dionysios Perdikis,
Paul Triebkorn,
Leon Stefanovski,
Roopa Pai,
Paula Popa,
Bogdan Valean,
Jessica Palmer,
Chloê Langford,
André Blickensdörfer,
Michiel van der Vlag,
Sandra Diaz-Pier,
Alexander Peyser,
Wouter Klijn,
Dirk Pleiter,
Anne Nahm,
Oliver Schmid,
Marmaduke Woodman,
Lyuba Zehl,
Jan Fousek,
Spase Petkoski,
Lionel Kusch,
Meysam Hashemi,
Daniele Marinazzo
, et al. (19 additional authors not shown)
Abstract:
The Virtual Brain (TVB) is now available as open-source cloud ecosystem on EBRAINS, a shared digital research platform for brain science. It offers services for constructing, simulating and analysing brain network models (BNMs) including the TVB network simulator; magnetic resonance imaging (MRI) processing pipelines to extract structural and functional connectomes; multiscale co-simulation of spi…
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The Virtual Brain (TVB) is now available as open-source cloud ecosystem on EBRAINS, a shared digital research platform for brain science. It offers services for constructing, simulating and analysing brain network models (BNMs) including the TVB network simulator; magnetic resonance imaging (MRI) processing pipelines to extract structural and functional connectomes; multiscale co-simulation of spiking and large-scale networks; a domain specific language for automatic high-performance code generation from user-specified models; simulation-ready BNMs of patients and healthy volunteers; Bayesian inference of epilepsy spread; data and code for mouse brain simulation; and extensive educational material. TVB cloud services facilitate reproducible online collaboration and discovery of data assets, models, and software embedded in scalable and secure workflows, a precondition for research on large cohort data sets, better generalizability and clinical translation.
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Submitted 29 March, 2021; v1 submitted 11 February, 2021;
originally announced February 2021.
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Optimizing CUDA Code By Kernel Fusion---Application on BLAS
Authors:
J. Filipovič,
M. Madzin,
J. Fousek,
L. Matyska
Abstract:
Modern GPUs are able to perform significantly more arithmetic operations than transfers of a single word to or from global memory. Hence, many GPU kernels are limited by memory bandwidth and cannot exploit the arithmetic power of GPUs. However, the memory locality can be often improved by kernel fusion when a sequence of kernels is executed and some kernels in this sequence share data.
In this p…
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Modern GPUs are able to perform significantly more arithmetic operations than transfers of a single word to or from global memory. Hence, many GPU kernels are limited by memory bandwidth and cannot exploit the arithmetic power of GPUs. However, the memory locality can be often improved by kernel fusion when a sequence of kernels is executed and some kernels in this sequence share data.
In this paper, we show how kernels performing map, reduce or their nested combinations can be fused automatically by our source-to-source compiler. To demonstrate the usability of the compiler, we have implemented several BLAS-1 and BLAS-2 routines and show how the performance of their sequences can be improved by fusions.
Compared to similar sequences using CUBLAS, our compiler is able to generate code that is up to 2.61x faster for the examples tested.
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Submitted 16 July, 2013; v1 submitted 6 May, 2013;
originally announced May 2013.
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Patterning of dielectric nanoparticles using dielectrophoretic forces generated by ferroelectric polydomain films
Authors:
Pavel Mokrý,
Milan Marvan,
Jan Fousek
Abstract:
A theoretical study of a dielectrophoretic force, i.e. the force acting on an electrically neutral particle in the inhomogeneous electric field, which is produced by a ferroelectric domain pattern, is presented. It has been shown by several researchers that artificially prepared domain patterns with given geometry in ferroelectric single crystals represent an easy and flexible method for patternin…
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A theoretical study of a dielectrophoretic force, i.e. the force acting on an electrically neutral particle in the inhomogeneous electric field, which is produced by a ferroelectric domain pattern, is presented. It has been shown by several researchers that artificially prepared domain patterns with given geometry in ferroelectric single crystals represent an easy and flexible method for patterning dielectric nanoobjects using dielectrophoretic forces. The source of the dielectrophoretic force is a strong and highly inhomogeneous (stray) electric field, which exists in the vicinity of the ferroelectric domain walls at the surface of the ferroelectric film. We analyzed dielectrophoretic forces in the model of a ferroelectric film of a given thickness with a lamellar 180${}^\circ$ domain pattern. The analytical formula for the spatial distribution of the stray field in the ionic liquid above the top surface of the film is calculated including the effect of free charge screening. The spatial distribution of the dielectrophoretic force produced by the domain pattern is presented. The numerical simulations indicate that the intersection of the ferroelectric domain wall and the surface of the ferroelectric film represents a trap for dielectric nanoparticles in the case of so called positive dielectrophoresis. The effects of electrical neutrality of dielectric nanoparticles, free charge screening due to the ionic nature of the liquid, domain pattern geometry, and the Brownian motion on the mechanism of nanoparticle deposition and the stability of the deposited pattern are discussed.
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Submitted 29 March, 2010;
originally announced March 2010.
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Extrinsic contributions in a nonuniform ferroic sample: Dielectric, piezoelectric and elastic
Authors:
P. Mokry,
A. Kopal,
J. Fousek
Abstract:
The contribution Delta_epsilon of extremely small motions of domain walls to small-signal permittivity of a multidomain ferroelectric sample has been a research issue for many years. In ferroelastic ferroelectrics such motions contribute also to their piezoelectric (by Delta_d) and elastic (by Delta_s) properties. Data about their simultaneous existence are scarce but those available point to mu…
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The contribution Delta_epsilon of extremely small motions of domain walls to small-signal permittivity of a multidomain ferroelectric sample has been a research issue for many years. In ferroelastic ferroelectrics such motions contribute also to their piezoelectric (by Delta_d) and elastic (by Delta_s) properties. Data about their simultaneous existence are scarce but those available point to mutual proportionality of Delta_epsilon, Delta_d and Delta_s, as expected. To understand the magnitude of extrinsic contributions, the origin of the restoring force acting on domain walls must be understood. In the present contribution the theory has been developed based on the model of a plate-like sample in which the ferroelectric- ferroelastic bulk is provided with a nonferroic surface layer. Motion of domain walls in the bulk results in a change of electric and elastic energy both in the bulk and in the layer, which provides the source of restoring force. This makes it possible to determine all mentioned extrinsic contributions. We discuss the applicability of the model to available data for single crystals and also for ceramic grains.
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Submitted 13 February, 2007;
originally announced February 2007.
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On the extrinsic piezoelectricity
Authors:
A. Kopal,
P. Mokry,
J. Fousek,
T. Bahnik
Abstract:
This work presents a continuation of our last paper, concerning the theory of the response of an antiparallel domain structure in a plate-like electroded sample to external electric field. The theory is based on the exact formula for free energy of the system, formed of a central ferroelectric part, isolated from electrodes (with a defined potential difference) by a surface layers. Our calculati…
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This work presents a continuation of our last paper, concerning the theory of the response of an antiparallel domain structure in a plate-like electroded sample to external electric field. The theory is based on the exact formula for free energy of the system, formed of a central ferroelectric part, isolated from electrodes (with a defined potential difference) by a surface layers. Our calculations are applicable also to thin films. It is usual to use the term `extrinsic' for the contribution of domain walls displacement to macroscopic properties of a sample. In our last paper we discussed the extrinsic contribution to permittivity. In this work we concentrate on extrinsic contribution to piezoelectric coefficients in ferroelectrics which are simultaneously ferroelastics. As an example, we calculate the extrinsic contribution to d_36 piezoelectric coefficient of RbH2PO4, that was recently measured in a wide range of temperature below Curie point.
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Submitted 13 February, 2007;
originally announced February 2007.
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Displacements of 180-degree domain walls in electroded ferroelectric single crystals: the effect of surface layers on restoring force
Authors:
A. Kopal,
P. Mokry,
J. Fousek,
T. Bahnik
Abstract:
Macroscopic properties of ferroelectric samples, including those in form of thin films, are, to large extent, influenced by their domain structure. In this paper the free energy is calculated for a plate-like sample composed of nonferroelectric surface layers and ferroelectric central part with antiparallel domains. The sample is provided with electrodes with a defined potential difference. The…
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Macroscopic properties of ferroelectric samples, including those in form of thin films, are, to large extent, influenced by their domain structure. In this paper the free energy is calculated for a plate-like sample composed of nonferroelectric surface layers and ferroelectric central part with antiparallel domains. The sample is provided with electrodes with a defined potential difference. The effect of applied field and its small changes on the resulting domain structure is discussed. This makes it possible to determine the restoring force acting on domain walls which codetermines dielectric and piezoelectric properties of the sample. Calculations of the potential and free energy take into account interactions of opposite surfaces and are applicable also to thin films.
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Submitted 13 February, 2007;
originally announced February 2007.
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Pressure on charged domain walls and additional imprint mechanism in ferroelectrics
Authors:
P. Mokry,
A. K. Tagantsev,
J. Fousek
Abstract:
The impact of free charges on the local pressure on a charged ferroelectric domain wall produced by an electric field has been analyzed. A general formula for the local pressure on a charged domain wall is derived considering full or partial compensation of bound polarization charges by free charges. It is shown that the compensation can lead to a very strong reduction of the pressure imposed on…
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The impact of free charges on the local pressure on a charged ferroelectric domain wall produced by an electric field has been analyzed. A general formula for the local pressure on a charged domain wall is derived considering full or partial compensation of bound polarization charges by free charges. It is shown that the compensation can lead to a very strong reduction of the pressure imposed on the wall from the electric field. In some cases this pressure can be governed by small nonlinear effects. It is concluded that the free charge compensation of bound polarization charges can lead to substantial reduction of the domain wall mobility even in the case when the mobility of free charge carriers is high. This mobility reduction gives rise to an additional imprint mechanism which may play essential role in switching properties of ferroelectric materials. The effect of the pressure reduction on the compensated charged domain walls is illustrated for the case of 180-degree ferroelectric domain walls and of 90-degree ferroelectric domain walls with the head-to-head configuration of the spontaneous polarization vectors.
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Submitted 15 February, 2007; v1 submitted 7 November, 2006;
originally announced November 2006.
