Showing 1–11 of 11 results for author: Fouchet, A

Artificial ageing of thin films of the indium-free transparent conducting oxide SrVO3

Authors: M. Rath, M. Mezhoud, O. El Khaloufi, O. Lebedev, J. Cardin, Ch. Labbé, F. Gourbilleau, V. Polewczyk, G. Vinai, P. Torelli, A. Fouchet, A. David, W. Prellier, U. Lüders

Abstract: SrVO3 (SVO) is a prospective candidate to replace the conventional indium-tin-oxide (ITO) among the new transparent conducting oxide (TCO) generation. In this study, the structural, electrical, and optical properties of SVO thin films, both epitaxial and polycrystalline, are determined during and after heat treatments in the 150-250 °C range and under ambient environment in order to explore the ch… ▽ More SrVO3 (SVO) is a prospective candidate to replace the conventional indium-tin-oxide (ITO) among the new transparent conducting oxide (TCO) generation. In this study, the structural, electrical, and optical properties of SVO thin films, both epitaxial and polycrystalline, are determined during and after heat treatments in the 150-250 °C range and under ambient environment in order to explore the chemical stability of this material. The use of these relatively low temperatures speeds up the natural ageing of the films, and allows to follow the evolution of their related properties. The combination of techniques rather sensitive to the film surface and of techniques sampling the film volume will emphasize the presence of a surface oxidation evolving in time at low annealing temperatures, whereas the perovskite phase is destroyed throughout the film for treatments above 200 °C. The present study is designed to understand the thermal degradation and long-term stability issues of vanadate-based TCOs, and to identify technologically viable solutions for the application of this group as new TCOs. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Engineering the magnetic and magnetocaloric properties of PrVO3 epitaxial oxide thin films by strain effects

Authors: H. Bouhani, A. Endichi, D. Kumar, O. Copie, H. Zaari, A. David, A. Fouchet, W. Prellier, O. Mounkachi, M. Balli, A. Benyoussef, A. El Kenz, S. Mangin

Abstract: Combining multiple degrees of freedom in strongly-correlated materials such as transition-metal oxides would lead to fascinating magnetic and magnetocaloric features. Herein, the strain effects are used to markedly tailor the magnetic and magnetocaloric properties of PrVO3 thin films. The selection of appropriate thickness and substrate enables us to dramatically decrease the coercive magnetic fie… ▽ More Combining multiple degrees of freedom in strongly-correlated materials such as transition-metal oxides would lead to fascinating magnetic and magnetocaloric features. Herein, the strain effects are used to markedly tailor the magnetic and magnetocaloric properties of PrVO3 thin films. The selection of appropriate thickness and substrate enables us to dramatically decrease the coercive magnetic field from 2.4 T previously observed in sintered PVO3 bulk to 0.05 T for compressive thin films making from the PrVO3 compound a nearly soft magnet. This is associated with a marked enhancement of the magnetic moment and the magnetocaloric effect that reach unusual maximum values of roughly 4.86 uB and 56.8 J/kg K in the magnetic field change of 6 T applied in the sample plane at the cryogenic temperature range (3 K), respectively. This work strongly suggests that taking advantage of different degrees of freedom and the exploitation of multiple instabilities in a nanoscale regime is a promising strategy for unveiling unexpected phases accompanied by a large magnetocaloric effect in oxides. △ Less

Submitted 20 August, 2020; originally announced August 2020.

Comments: This paper is accepted for publication in Applied Physics Letters

Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Authors: Changan Wang, Hongbin Zhang, Kumar Deepak, 5Chao Chen, Arnaud Fouchet, Juanmei Duan, Donovan Hilliard, Ulrich Kentsch, Deyang Chen, Min Zeng, Xingsen Gao, Yu-Jia Zeng, Manfred Helm, Wilfrid Prellier, Shengqiang Zhou

Abstract: Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in develo** novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice… ▽ More Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in develo** novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide new insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons. △ Less

Submitted 14 April, 2019; originally announced April 2019.

Comments: 17 pages, 4 figures,submitted to Phys. Rev. Materials

Journal ref: Phys. Rev. Materials 3, 115001 (2019)

Magnetism tailored by mechanical strain engineering in PrVO$_3$ thin films

Authors: Deepak Kumar, Adrian David, Arnaud Fouchet, Alain Pautrat, Julien Varignon, Chang Uk Jung, Ulrike Lüders, Bernadette Domengès, Olivier Copie, Philippe Ghosez, Wilfrid Prellier

Abstract: Transition-metal oxides with an ABO$_3$ perovskite structure exhibit strongly entangled structural and electronic degrees of freedom and thus, one expects to unveil exotic phases and properties by acting on the lattice through various external stimuli. Using the Jahn-Teller active praseodymium vanadate Pr$^{3+}$V$^{3+}$O$_3$ compound as a model system, we show that PrVO$_3$ Néel temperature T$_N$… ▽ More Transition-metal oxides with an ABO$_3$ perovskite structure exhibit strongly entangled structural and electronic degrees of freedom and thus, one expects to unveil exotic phases and properties by acting on the lattice through various external stimuli. Using the Jahn-Teller active praseodymium vanadate Pr$^{3+}$V$^{3+}$O$_3$ compound as a model system, we show that PrVO$_3$ Néel temperature T$_N$ can be raised by 40 K with respect to the bulk when grown as thin films. Using advanced experimental techniques, this enhancement is unambiguously ascribed to a tetragonality resulting from the epitaxial compressive strain experienced by the films. First-principles simulations not only confirm experimental results, but they also reveal that the strain promotes an unprecedented orbital-ordering of the V$^{3+}$ d electrons, strongly favouring antiferromagnetic interactions. These results show that an accurate control of structural aspects is the key for unveiling unexpected phases in oxides. △ Less

Submitted 12 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. B 99, 224405 (2019)

Interface chemical and electronic properties of LaAlO3/SrVO3 heterostructures

Authors: Arnaud Fouchet, Julien E. Rault, Mickaël Allain, Bruno Bérini, J. -P. Rueff, Yves Dumont, Niels Keller

Abstract: We have studied the chemical and electronic properties of LaAlO3/SrVO3 ultrathin films by combining hard x-ray photoemission spectroscopy and transport measurements. We compare single SrVO3 (SVO) ultrathin films and SrVO3 buried below a polar LaAlO3 (LAO) thin layer, both epitaxially grown on SrTiO3. While ultrathin films (4 unit cells) of SVO do show insulating behavior over the entire temperatur… ▽ More We have studied the chemical and electronic properties of LaAlO3/SrVO3 ultrathin films by combining hard x-ray photoemission spectroscopy and transport measurements. We compare single SrVO3 (SVO) ultrathin films and SrVO3 buried below a polar LaAlO3 (LAO) thin layer, both epitaxially grown on SrTiO3. While ultrathin films (4 unit cells) of SVO do show insulating behavior over the entire temperature range, the LAO/SVO interface has a resistivity minimum at 250 K. When increasing the SVO layer thickness, the minimum is observed to shift to higher temperatures, but the resistivity stays always smaller than that of comparable SVO single films. Hard x-ray photoemission spectroscopy reveals a surface or interface related V5+ component in the V 2p spectra for SVO films and LAO/SVO heterostructures, respectively, attributed to a strongly oxidized component. This chemical reconstruction is weaker in LAO/SVO heterostructures compared to single SVO films. We show that this dead layer in SVO ultrathin films has to be considered when the film thickness reaches the few unit-cells limit and propose solutions on how to prevent this detrimental effect. △ Less

Submitted 8 June, 2018; originally announced June 2018.

Comments: 15 pages, 4 figures + SI 2 pages, 1 figure

Journal ref: Journal of Applied Physics 123, 055302 (2018)

Tuning the Electronic Properties of LAO/STO Interfaces by Irradiating LAO Surface with Low-Energy Cluster Ion Beams

Authors: Karl Ridier, Damien Aureau, Bruno Bérini, Yves Dumont, Niels Keller, Jackie Vigneron, Arnaud Etcheberry, Arnaud Fouchet

Abstract: We have investigated the effects of low-energy ion beam irradiations using argon clusters on the chemical and electronic properties of LaAlO3/SrTiO3 (LAO/STO) heterointerfaces by combining X-ray photoelectron spectroscopy (XPS) and electrical transport measurements. Due to its unique features, we show that a short-time cluster ion irradiation of the LAO surface induces indirect modifications in th… ▽ More We have investigated the effects of low-energy ion beam irradiations using argon clusters on the chemical and electronic properties of LaAlO3/SrTiO3 (LAO/STO) heterointerfaces by combining X-ray photoelectron spectroscopy (XPS) and electrical transport measurements. Due to its unique features, we show that a short-time cluster ion irradiation of the LAO surface induces indirect modifications in the chemical properties of the buried STO substrate, with (1) a lowering of Ti atoms oxidation states (from Ti4+ to Ti3+ and Ti2+) correlated to the formation of oxygen vacancies at the LAO surface and (2) the creation of new surface states for Sr atoms. Contrary to what is observed by using higher energy ion beam techniques, this leads to an increase of the electrical conductivity at the LAO/STO interface. Our XPS data clearly reveal the existence of dynamical processes on the titanium and strontium atoms, which compete with the effect of the cluster ion beam irradiation. These relaxation effects are in part attributed to the diffusion of the ion-induced oxygen vacancies in the entire heterostructure, since an increase of the interfacial metallicity is also evidenced far from the irradiated area. These results demonstrate that a local perturbation of the LAO surface can induce new properties at the interface and in the entire heterostructure. This study highlights the possibility of tuning the electronic properties of LAO/STO interfaces by surface engineering, confirming experimentally the intimate connection between LAO surface chemistry and electronic properties of LAO/STO interfaces. △ Less

Submitted 6 April, 2017; originally announced April 2017.

Comments: 23 pages, 5 figures

Journal ref: Phys. Rev. B 97, 035146 (2018)

Hubbard band or oxygen vacancy states in the correlated electron metal SrVO$_3$?

Authors: S. Backes, T. C. Rödel, F. Fortuna, E. Frantzeskakis, P. Le Fèvre, F. Bertran, M. Kobayashi, R. Yukawa, T. Mitsuhashi, M. Kitamura, K. Horiba, H. Kumigashira, R. Saint-Martin, A. Fouchet, B. Berini, Y. Dumont, A. J. Kim, F. Lechermann, H. O. Jeschke, M. J. Rozenberg, R. Valentí, A. F. Santander-Syro

Abstract: We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously… ▽ More We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously reported in this compound, raising questions on its previous interpretation. By a careful analysis of the dose dependent effects we succeed in disentangling the contributions coming from the oxygen vacancy states and from the lower Hubbard band. We obtain the intrinsic ARPES spectrum for the zero-vacancy limit, where a clear signal of a lower Hubbard band remains. We support our study by means of state-of-the-art ab initio calculations that include correlation effects and the presence of oxygen vacancies. Our results underscore the relevance of potential spurious states affecting ARPES experiments in correlated metals, which are associated to the ubiquitous oxygen vacancies as extensively reported in the context of a two-dimensional electron gas (2DEG) at the surface of insulating $d^0$ transition metal oxides. △ Less

Submitted 22 February, 2016; originally announced February 2016.

Comments: Manuscript + Supplemental Material, 12 pages, 9 figures

Journal ref: Phys. Rev. B 94, 241110 (2016)

Influence of the microstructure on the magnetism of Co-doped ZnO thin films

Authors: A. Fouchet, W. Prellier, B. Mercey

Abstract: The prediction of ferromagnetism at room temperature in Co-ZnO thin films has generated a large interest in the community due to the possible applications. However, the results are controversial, going from ferromagnetism to non-ferromagnetism, leading to a large debate about its origin (secondary phase, Co clusters or not). By carefully studying the micro-structure of various Co-ZnO films, we s… ▽ More The prediction of ferromagnetism at room temperature in Co-ZnO thin films has generated a large interest in the community due to the possible applications. However, the results are controversial, going from ferromagnetism to non-ferromagnetism, leading to a large debate about its origin (secondary phase, Co clusters or not). By carefully studying the micro-structure of various Co-ZnO films, we show that the Co2+ partly substitutes the ZnO wurtzite matrix without forming Co clusters. Surprisingly, the ferromagnetism nature of the films disappears as the Co content increases. In addition, our results suggest that the observed ferromagnetism is likely associated to a large amount of defects- close to the interface and strongly depending on the growth temperature- which may explained the spreading of the results. △ Less

Submitted 20 April, 2006; originally announced April 2006.

Comments: 4 pages, 4 figures, to be published in Journal of Applied Physics (2006)

Journal ref: J. Appl. Phys. 100 (2006) 013901

Investigation of laser ablated ZnO thin films grown with Zn metal target: a structural study

Authors: A. Fouchet, W. Prellier, B. Mercey, L. Mechin, V. N. Kulkarni, T. Venkatesan

Abstract: High quality ZnO thin films were gown using the pulsed laser deposition technique on (0001) Al$_2$O$_3$ substrates in an oxidizing atmosphere, using a Zn metallic target. We varied the growth conditions such as the deposition temperature and the oxygen pressure. First, using a battery of techniques such as x-rays diffraction, Rutherford Backscattering spectroscopy and atomic force microscopy, we… ▽ More High quality ZnO thin films were gown using the pulsed laser deposition technique on (0001) Al$_2$O$_3$ substrates in an oxidizing atmosphere, using a Zn metallic target. We varied the growth conditions such as the deposition temperature and the oxygen pressure. First, using a battery of techniques such as x-rays diffraction, Rutherford Backscattering spectroscopy and atomic force microscopy, we evaluated the structural quality, the stress and the degree of epitaxy of the films. Second, the relations between the deposition conditions and the structural properties, that are directly related to the nature of the thin films, are discussed qualitatively. Finally, a number of issues on how to get good-quality ZnO films are addressed. △ Less

Submitted 27 May, 2004; originally announced May 2004.

Comments: To be published in Jour. Appl. Phys. (15 August 2004)

Journal ref: J. Appl. Phys. 96 (2004) 3228

Structural and magnetic properties of a series of low doped Zn$_{1-x}$Co$_x$O thin films deposited from Zn and Co metal targets on (0001) Al$_2$O$_3$ substrates

Authors: A. Fouchet, W. Prellier, P. Padhan, Ch. Simon, B. Mercey, V. N. Kulkarni, T. Venkatesan

Abstract: We report on the synthesis of low do** Zn$_{1-x}$Co$_x$O ($0<x<0.1$) thin films on (0001)-Al$_2$O$_3$ substrates. The films were prepared in an oxidizing atmosphere, using the pulsed laser deposition technique starting from Zn and Co metallic targets. We first studied the influence of the strains of ZnO and their stuctural properties. Second, we have investigated the structural and the magneti… ▽ More We report on the synthesis of low do** Zn$_{1-x}$Co$_x$O ($0<x<0.1$) thin films on (0001)-Al$_2$O$_3$ substrates. The films were prepared in an oxidizing atmosphere, using the pulsed laser deposition technique starting from Zn and Co metallic targets. We first studied the influence of the strains of ZnO and their stuctural properties. Second, we have investigated the structural and the magnetic properties of the Zn$_{1-x}$Co$_x$O films. We show that at low do**, the lattice parameters and the magnetization of the Zn$_{1-x}$Co$_x$O films depend strongly on the Co concentration. △ Less

Submitted 10 March, 2004; originally announced March 2004.

Comments: to be published in Journal Applied Physics (June 2004) as a proceeding of the MMM/Intermag Conference

Journal ref: J. Appl. Phys. 95 (2004) 7187

Laser ablation of Co:ZnO films deposited from Zn and Co metal targets on (0001) Al$_2$O$_3$ substrates

Authors: W. Prellier, A. Fouchet, B. Mercey, Ch. Simon, B. Raveau

Abstract: We report on the synthesis of high-quality Co-doped ZnO thin films using the pulsed laser deposition technique on (0001)-Al$_2$O$_3$ substrates performed in an oxidizing atmosphere, using Zn and Co metallic targets. We firstly optimized the growth of ZnO in order to obtain the less strained film. Highly crystallized Co:ZnO thin films are obtained by an alternative deposition from Zn and Co metal… ▽ More We report on the synthesis of high-quality Co-doped ZnO thin films using the pulsed laser deposition technique on (0001)-Al$_2$O$_3$ substrates performed in an oxidizing atmosphere, using Zn and Co metallic targets. We firstly optimized the growth of ZnO in order to obtain the less strained film. Highly crystallized Co:ZnO thin films are obtained by an alternative deposition from Zn and Co metal targets. This procedure allows an homogenous repartition of the Co in the ZnO wurzite structure which is confirmed by the linear dependance of the out-of-plane lattice parameter as a function of the Co dopant. In the case of 5% Co doped, the film exhibits ferromagnetism with a Curie temperature close to the room temperature. △ Less

Submitted 10 April, 2003; originally announced April 2003.

Comments: 8 pages, 5 Figures, accepted in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 82 (2003) 3490