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The effect of surface oxidation and crystal thickness on magnetic properties and magnetic domain structures of Cr2Ge2Te6
Authors:
Joachim Dahl Thomsen,
Myung-Geun Han,
Aubrey Penn,
Alexandre C. Foucher,
Michael Geiwitz,
Kenneth S. Burch,
Lukáš Děkanovský,
Zdeněk Sofer,
Yu Liu,
Cedomir Petrovic,
Frances M. Ross,
Yimei Zhu,
Prineha Narang
Abstract:
Van der Waals (vdW) magnetic materials such as Cr2Ge2Te6 (CGT) show promise for novel memory and logic applications. This is due to their broadly tunable magnetic properties and the presence of topological magnetic features such as skyrmionic bubbles. A systematic study of thickness and oxidation effects on magnetic domain structures is important for designing devices and vdW heterostructures for…
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Van der Waals (vdW) magnetic materials such as Cr2Ge2Te6 (CGT) show promise for novel memory and logic applications. This is due to their broadly tunable magnetic properties and the presence of topological magnetic features such as skyrmionic bubbles. A systematic study of thickness and oxidation effects on magnetic domain structures is important for designing devices and vdW heterostructures for practical applications. Here, we investigate thickness effects on magnetic properties, magnetic domains, and bubbles in oxidation-controlled CGT crystals. We find that CGT exposed to ambient conditions for 5 days forms an oxide layer approximately 5 nm thick. This oxidation leads to a significant increase in the oxidation state of the Cr ions, indicating a change in local magnetic properties. This is supported by real space magnetic texture imaging through Lorentz transmission electron microscopy. By comparing the thickness dependent saturation field of oxidized and pristine crystals, we find that oxidation leads to a non-magnetic surface layer which is thicker than the oxide layer alone. We also find that the stripe domain width and skyrmionic bubble size are strongly affected by the crystal thickness in pristine crystals. These findings underscore the impact of thickness and surface oxidation on the properties of CGT such as saturation field and domain/skyrmionic bubble size and suggest a pathway for manipulating magnetic properties through a controlled oxidation process.
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Submitted 24 March, 2024; v1 submitted 3 October, 2023;
originally announced October 2023.
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Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride
Authors:
Hang Chi,
Yunbo Ou,
Tim B. Eldred,
Wenpei Gao,
Sohee Kwon,
Joseph Murray,
Michael Dreyer,
Robert E. Butera,
Alexandre C. Foucher,
Haile Ambaye,
Jong Keum,
Alice T. Greenberg,
Yuhang Liu,
Mahesh R. Neupane,
George J. de Coster,
Owen A. Vail,
Patrick J. Taylor,
Patrick A. Folkes,
Charles Rong,
Gen Yin,
Roger K. Lake,
Frances M. Ross,
Valeria Lauter,
Don Heiman,
Jagadeesh S. Moodera
Abstract:
Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as establ…
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Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics.
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Submitted 9 December, 2022; v1 submitted 5 July, 2022;
originally announced July 2022.
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Efficacy of Boron Nitride Encapsulation against Plasma-Processing in van der Waals Heterostructures
Authors:
Pawan Kumar,
Kelotchi S. Figueroa,
Alexandre C. Foucher,
Kiyoung Jo,
Natalia Acero,
Eric A. Stach,
Deep Jariwala
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical and electronic properties can be significantly enhanced when encapsulated in an environment that is free of charge disorder. Because hexagonal boron nitride (h-BN) is atomically thin, highly-crystalline, and is…
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Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical and electronic properties can be significantly enhanced when encapsulated in an environment that is free of charge disorder. Because hexagonal boron nitride (h-BN) is atomically thin, highly-crystalline, and is a strong insulator, it is one of the most commonly used 2D materials to encapsulate and passivate TMDCs. In this report, we examine how ultrathin h-BN shields an underlying MoS2 TMDC layer from the energetic argon plasmas that are routinely used during semiconductor device fabrication and post-processing. Aberration-corrected Scanning Transmission Electron Microscopy is used to analyze defect formation in both the h-BN and MoS2 layers, and these observations are correlated with Raman and photoluminescence spectroscopy. Our results highlight that h-BN is an effective barrier for short plasma exposures (< 30 secs) but is ineffective for longer exposures, which result in extensive knock-on damage and amorphization in the underlying MoS2.
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Submitted 14 November, 2020;
originally announced November 2020.
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Direct Visualisation of Out-of-Equilibrium Structural Transformations in Atomically-Thin Chalcogenides
Authors:
Pawan Kumar,
James P. Horwath,
Alexandre C. Foucher,
Christopher C. Price,
Natalia Acero,
Vivek B. Shenoy,
Eric A. Stach,
Deep Jariwala
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of sustained research interest due to their extraordinary electronic and optical properties. They also exhibit a wide range of structural phases because of the different orientations that the atoms can have within a single layer, or due to the ways that different layers can stack. Here we report the first study of…
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Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of sustained research interest due to their extraordinary electronic and optical properties. They also exhibit a wide range of structural phases because of the different orientations that the atoms can have within a single layer, or due to the ways that different layers can stack. Here we report the first study of direct-visualization of structural transformations in atomically-thin layers under highly non-equilibrium thermodynamic conditions. We probe these transformations at the atomic scale using real-time, aberration corrected scanning transmission electron microscopy and observe strong dependence of the resulting structures and phases on both heating rate and temperature. A fast heating rate (25 C/sec) yields highly ordered crystalline hexagonal islands of sizes of less than 20 nm which are composed of a mixture of 2H and 3R phases. However, a slow heating rate (25 C/min) yields nanocrystalline and sub-stoichiometric amorphous regions. These differences are explained by different rates of sulfur evaporation and redeposition. The use of non-equilibrium heating rates to achieve highly crystalline and quantum-confined features from 2D atomic layers present a new route to synthesize atomically-thin, laterally confined nanostrucutres and opens new avenues for investigating fundamental electronic phenomena in confined dimensions.
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Submitted 20 February, 2020;
originally announced February 2020.
