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Multifilamentary character of anticorrelated capacitive and resistive switching in memristive structures based on (CoFeB)x(LiNbO3)100-x nanocomposite
Authors:
M. N. Martyshov,
A. V. Emelyanov,
V. A. Demin,
K. E. Nikiruy,
A. A. Minnekhanov,
S. N. Nikolaev,
A. N. Taldenkov,
A. V. Ovcharov,
M. Yu. Presnyakov,
A. V. Sitnikov,
A. L. Vasiliev,
P. A. Forsh,
A. B. Granovskiy,
P. K. Kashkarov,
M. V. Kovalchuk,
V. V. Rylkov
Abstract:
Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ($\approx$ 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogr…
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Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ($\approx$ 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogranules of 3-6 nm in size, contained a large number of dispersed Co (Fe) atoms (up to ~10^22 cm^-3). Measurements were performed both in DC and AC (frequency range 5-13 MHz) regimes. When switching structures from high-resistance (Roff) to low-resistance (Ron) state, the effect of a strong increase in their capacity was found, which reaches 8 times at x $\approx$ 15 at. % and the resistance ratio Roff/Ron $\approx$ 40. The effect is explained by the synergetic combination of the multifilamentary character of resistive switching (RS) and structural features of the samples associated, in particular, with the formation of high-resistance and strongly polarizable LiNbO3 layer near the bottom electrode of the structures. The proposed model is confirmed by investigations of RS of two-layer nanoscale M/NC/LiNbO3/M structures as well as by studies of the magnetization of M/NC/M structures in the pristine state and after RS.
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Submitted 17 August, 2020; v1 submitted 8 December, 2019;
originally announced December 2019.
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Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells
Authors:
A. V. Sachenko,
A. V. Bobyl,
V. N. Verbitskiy,
V. M. Vlasyuk,
D. M. Zhigunov,
V. P. Kostylyov,
I. O. Sokolovskyi,
E. I. Terukov,
P. A. Forsh,
M. Evstigneev
Abstract:
Surface recombination affects both light-to-electricity and electricity-to-light conversion in solar cells (SCs). Therefore, quantitative analysis and reduction of surface recombination is an important direction in SC research. In this work, electroluminescence (EL) intensity and photoconversion efficiency of a set of 93 large-area (239\,cm$^2$) a-Si:H/c-Si heterojunction SCs (HJSCs) are measured…
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Surface recombination affects both light-to-electricity and electricity-to-light conversion in solar cells (SCs). Therefore, quantitative analysis and reduction of surface recombination is an important direction in SC research. In this work, electroluminescence (EL) intensity and photoconversion efficiency of a set of 93 large-area (239\,cm$^2$) a-Si:H/c-Si heterojunction SCs (HJSCs) are measured under AM1.5 conditions at 298 K. The HJSC samples differed only in surface recombination velocity, $S$, but otherwise were identical. Variation in $S$ was due to the variation of the chemical conditions under which the samples were treated. It is established that EL quantum efficiency, is affected by $S$ much more strongly than photoconversion efficiency, $η$: namely, the reduction of the latter from 20.5\% to 18\% due to an increase of $S$ is accompanied by a decrease of the former by more than an order of magnitude. In HJSCs with well passivated surfaces, i.e. low $S$, EL efficiency reached 2.1\%, which is notably higher than the known values in silicon homojunction diodes. For temperature-dependent measurements of EL and dark I-V curves, one of the samples was cut into small-area (1 cm$^2$) pieces. It was found that EL intensity as a function of temperature develops a maximum at $T$ = 223 K. At low temperatures, the current at weak bias is shown to be due to tunneling mechanism. A theoretical model is developed that explains all these findings quantitatively.
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Submitted 18 December, 2017;
originally announced December 2017.
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Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation
Authors:
Andrey V. Emelyanov,
Andrey G. Kazanskii,
Mark V. Khenkin,
Pavel A. Forsh,
Pavel K. Kashkarov,
Mindaugas Gecevicius,
Martynas Beresna,
Peter G. Kazansky
Abstract:
Visible luminescence is observed from the composite of SiO2 with embedded silicon nanocrystallites produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the defect states at the interface between silicon crystallites and SiO2 matrix. The method could be used for fabrication of luminescent layers to increase energy co…
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Visible luminescence is observed from the composite of SiO2 with embedded silicon nanocrystallites produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the defect states at the interface between silicon crystallites and SiO2 matrix. The method could be used for fabrication of luminescent layers to increase energy conversion of a-Si:H solar cells.
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Submitted 26 June, 2012;
originally announced June 2012.
