Showing 1–50 of 60 results for author: Fontcuberta, J

Orbital Occupancy and Hybridization in Strained SrVO$_3$ Epitaxial Films

Authors: Mathieu Mirjolet, Hari Babu Vasili, Adrian Valadkhani, José Santiso, Vladislav Borisov, Pierluigi Gargiani, Manuel Valvidares, Roser Valentí, Josep Fontcuberta

Abstract: Oxygen packaging in transition metal oxides determines the metal-oxygen hybridization and electronic occupation at metal orbitals. Strontium vanadate (SrVO$_3$), having a single electron in a $3d$ orbital, is thought to be the simplest example of strongly correlated metallic oxides. Here, we determine the effects of epitaxial strain on the electronic properties of SrVO$_3$ thin films, where the me… ▽ More Oxygen packaging in transition metal oxides determines the metal-oxygen hybridization and electronic occupation at metal orbitals. Strontium vanadate (SrVO$_3$), having a single electron in a $3d$ orbital, is thought to be the simplest example of strongly correlated metallic oxides. Here, we determine the effects of epitaxial strain on the electronic properties of SrVO$_3$ thin films, where the metal-oxide sublattice is corner-connected. Using x-ray absorption and x-ray linear dichroism at the V $L_{2,3}$ and O $K$-edges, it is observed that tensile or compressive epitaxial strain change the hierarchy of orbitals within the $t_{2g}$ and $e_g$ manifolds. Data show a remarkable $2p-3d$ hybridization, as well as a strain-induced reordering of the V $3d$($t_{2g}$, $e_g$) orbitals. The latter is itself accompanied by a consequent change of hybridization that modulates the hybrid $π^*$ and $σ^*$ orbitals and the carrier population at the metal ions, challenging a rigid band picture. △ Less

Submitted 26 August, 2021; originally announced August 2021.

Polarization and resistive switching in epitaxial 2 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ tunnel junctions

Authors: Milena Cervo Sulzbach, Huan Tan, Saul Estandia, Jaume Gazquez, Florencio Sanchez, Ignasi Fina, Josep Fontcuberta

Abstract: In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices with thicknesses around ${\approx}$ 4 - 6 nm, the relatively high tunnel energy barrier produces a large resistance that challenges their implementatio… ▽ More In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices with thicknesses around ${\approx}$ 4 - 6 nm, the relatively high tunnel energy barrier produces a large resistance that challenges their implementation. Here, we show that ferroelectric and electroresistive switching can be observed in ultrathin 2 nm epitaxial Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) tunnel junctions in large area capacitors (${\approx} 300μm^2$). We observe that the resistance area product is reduced to about 160 $Ω{\cdot}$cm$^2$ and 65 $Ω{\cdot}$cm$^2$ for OFF and ON resistance states, respectively. These values are two orders of magnitude smaller than those obtained in equivalent 5 nm HZO tunnel devices while preserving a similar OFF/ON resistance ratio (210 ${\%}$). The devices show memristive and spike-timing-dependent plasticity (STDP) behavior and good retention. Electroresistance and ferroelectric loops closely coincide, signaling ferroelectric switching as a driving mechanism for resistance change. △ Less

Submitted 23 August, 2021; originally announced August 2021.

Journal ref: ACS Appl. Electron. Mater. 2021

Electron-Phonon Coupling and Electron-Phonon Scattering in SrVO$_3$

Authors: Mathieu Mirjolet, Francisco Rivadulla, Premysl Marsik, Vladislav Borisov, Roser Valenti, Josep Fontcuberta

Abstract: Understanding the physics of strongly correlated electronic systems has been a central issue in condensed matter physics for decades. In transition metal oxides, strong correlations characteristic of narrow $d$ bands is at the origin of such remarkable properties as the Mott gap opening, enhanced effective mass, and anomalous vibronic coupling, to mention a few. SrVO$_3$, with V$^{4+}$ in a… ▽ More Understanding the physics of strongly correlated electronic systems has been a central issue in condensed matter physics for decades. In transition metal oxides, strong correlations characteristic of narrow $d$ bands is at the origin of such remarkable properties as the Mott gap opening, enhanced effective mass, and anomalous vibronic coupling, to mention a few. SrVO$_3$, with V$^{4+}$ in a $3d^1$ electronic configuration is the simplest example of a 3D correlated metallic electronic system. Here, we focus on the observation of a (roughly) quadratic temperature dependence of the inverse electron mobility of this seemingly simple system, which is an intriguing property shared by other metallic oxides. The systematic analysis of electronic transport in SrVO$_3$ thin films discloses the limitations of the simplest picture of e-e correlations in a Fermi liquid; instead, we show that the quasi-2D topology of the Fermi surface and a strong electron-phonon coupling, contributing to dress carriers with a phonon cloud, play a pivotal role on the reported electron spectroscopic, optical, thermodynamic and transport data. The picture that emerges is not restricted to SrVO$_3$ but can be shared with other $3d$ and $4d$ metallic oxides. △ Less

Submitted 4 May, 2021; originally announced May 2021.

Flexible antiferromagnetic FeRh tapes as memory elements

Authors: Ignasi Fina, Nico Dix, Enric Menéndez, Anna Crespi, Michael Foerster, Lucia Aballe, Florencio Sánchez, Josep Fontcuberta

Abstract: The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large scale applications. The FeRh tape displa… ▽ More The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 oC. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05 %) is used to illustrate data writing/reading capability. △ Less

Submitted 16 February, 2021; originally announced February 2021.

Journal ref: ACS Applied Materials & Interfaces 2020 12 (13), 15389-15395

Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

Authors: Milena Cervo Sulzbach, Saúl Estandía, Xiao Long, Jike Lyu, Nico Dix, Jaume Gàzquez, Matthew F. Chisholm, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta

Abstract: Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related… ▽ More Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Here is shown the fundamental role of the microstructure of HZO films setting the balance between those contributions. The oxide film presents coherent or incoherent grain boundaries, associated to the existence of monoclinic and orthorhombic phases in HZO films, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to 450 %) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (1000-100000 %) electroresistance when both phases coexist. △ Less

Submitted 12 June, 2020; originally announced June 2020.

Journal ref: Adv. Electron. Mater. 2020, 6, 1900852

Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices

Authors: Milena Cervo Sulzbach, Saúl Estandía, Jaume Gàzquez, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta

Abstract: Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual paraelectric monoclinic (m-HZO) phase. These grain boundaries contribute to the resistive switching response in addition to the genuine ferroelectric polarizat… ▽ More Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual paraelectric monoclinic (m-HZO) phase. These grain boundaries contribute to the resistive switching response in addition to the genuine ferroelectric polarization switching and have detrimental effects on device performance. Here, it is shown that, by using suitable nanometric cap** layers deposited on HZO film, a radical improvement of the operation window of the tunnel device can be achieved. Crystalline SrTiO3 and amorphous AlOx are explored as cap** layers. It is observed that these layers conformally coat the HZO surface and allow to increase the yield and homogeneity of functioning ferroelectric junctions while strengthening endurance. Data show that the cap** layers block ionic-like transport channels across grain boundaries. It is suggested that they act as oxygen suppliers to the oxygen-getters grain boundaries in HZO. In this scenario it could be envisaged that these and other oxides could also be explored and tested for fully compatible CMOS technologies. △ Less

Submitted 12 June, 2020; originally announced June 2020.

Journal ref: Advanced Functional Materials 2020, 2002638

Reversible and magnetically unassisted voltage-driven switching of magnetization in FeRh/PMN-PT

Authors: Ignasi Fina, Alberto Quintana, Xavier Martí, Florencio Sánchez, Michael Foerster, Lucia Aballe, Jordi Sort, Josep Fontcuberta

Abstract: Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room temperature, FeRh displays an uncommon antiferromagnetic to ferromagnetic phase transition linked to a unit cell volume expansion. Thus, using the strain exerted by an adj… ▽ More Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room temperature, FeRh displays an uncommon antiferromagnetic to ferromagnetic phase transition linked to a unit cell volume expansion. Thus, using the strain exerted by an adjacent piezoelectric layer, the relative amount of antiferromagnetic and ferromagnetic regions can be tuned by an electric field applied to the piezoelectric material. Indeed, large variations in the saturation magnetization have been observed when straining FeRh films grown on suitable piezoelectric substrates. In view of its applications, the variations in the remanent magnetization rather than those of the saturation magnetization are the most relevant. Here, we show that in the absence of any bias external magnetic field, permanent and reversible magnetization changes as high as 34% can be induced by an electric field, which remain after this has been zeroed. Bulk and local magnetoelectric characterization reveals that the fundamental reason for the large magnetoelectric response observed at remanence is the expansion (rather than the nucleation) of ferromagnetic nanoregions. △ Less

Submitted 17 April, 2020; originally announced April 2020.

Comments: Supporting videos: youtu.be/1_RbcO2tE64 ; youtu.be/wnRZxg0U6Fs

Journal ref: Appl. Phys. Lett. 113, 152901 (2018)

Strain and voltage control of magnetic and electric properties of FeRh films

Authors: Ignasi Fina, Josep Fontcuberta

Abstract: FeRh based alloys may display an uncommon transition from a ferromagnetic to an antiferromagnetic state upon cooling. The transition takes place roughly above room temperature and it can be sensitively modulated by composition and external parameters, including pressure and strain. Consequently, thin films of FeRh have received attention for applications in spintronics, antiferromagnetic spintroni… ▽ More FeRh based alloys may display an uncommon transition from a ferromagnetic to an antiferromagnetic state upon cooling. The transition takes place roughly above room temperature and it can be sensitively modulated by composition and external parameters, including pressure and strain. Consequently, thin films of FeRh have received attention for applications in spintronics, antiferromagnetic spintronics and sensing. Interestingly, the extreme sensitivity of its properties to strain has created expectations for energy friendly voltage-control of the magnetic state of FeRh, with a number of potential applications at the horizon. Here, after summarizing the current understanding of strain effects on the magnetic properties of FeRh thin films, we review achievements on exploiting piezoelectric substrates for in-operando tuning of their magneto-electric properties. We end with a brief summary and an outlook for future initiatives. △ Less

Submitted 13 November, 2019; originally announced November 2019.

Journal ref: J.Phys.D: Appl.Phys. 53, 023002 (2020)

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Authors: Saul Estandia, Nico Dix, Jaume Gazquez, Ignasi Fina, Jike Lyu, Matthew F. Chisholm, Josep Fontcuberta, Florencio Sanchez

Abstract: The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented, cubic or pseudocubic setting, substrates with lattice parameter in the 3.71 - 4.21 A range. The lattice strain of the La0.67Sr0.33MnO3 electrode, det… ▽ More The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented, cubic or pseudocubic setting, substrates with lattice parameter in the 3.71 - 4.21 A range. The lattice strain of the La0.67Sr0.33MnO3 electrode, determined by the lattice mismatch with the substrate, is critical in the stabilization of the orthorhombic phase of Hf0.5Zr0.5O2. On La0.67Sr0.33MnO3 electrodes tensile strained most of the Hf0.5Zr0.5O2 film is orthorhombic, whereas the monoclinic phase is favored when La0.67Sr0.33MnO3 is relaxed or compressively strained. Therefore, the Hf0.5Zr0.5O2 films on TbScO3 and GdScO3 substrates present substantially enhanced ferroelectric polarization in comparison to films on other substrates, including the commonly used SrTiO3. The capability of having epitaxial doped HfO2 films with controlled phase and polarization is of major interest for a better understanding of the ferroelectric properties and paves the way for fabrication of ferroelectric devices based on nanometric HfO2 films. △ Less

Submitted 4 September, 2019; originally announced September 2019.

Journal ref: ACS Applied Electronic Materials, 1, 1449 (2019)

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Authors: J. Lyu, I. Fina, R. Bachelet, G. Saint-Girons, S. Estandia, J. Gazquez, J. Fontcuberta, F. Sanchez

Abstract: SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4… ▽ More SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4 V present long retention time well beyond 10 years and high endurance against fatigue up to 109 cycles. The robust ferroelectric properties displayed by the epitaxial Hf0.5Zr0.5O2 films on Si(001) using SrTiO3 templates paves the way for the monolithic integration on silicon of emerging memory devices based on epitaxial HfO2. △ Less

Submitted 5 June, 2019; originally announced June 2019.

Journal ref: Applied Physics Letters 114, 222901 (2019)

Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films

Authors: Jike Lyu, Ignasi Fina, Raul Solanas, Josep Fontcuberta, Florencio Sánchez

Abstract: The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown Hf0.5Zr0.5O2 films by pulsed laser deposition, and the growth window (temperature and oxygen pressure during deposition and film thickness) for epitaxial stabilization of the ferroelectric phase is mapped. The remnant f… ▽ More The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown Hf0.5Zr0.5O2 films by pulsed laser deposition, and the growth window (temperature and oxygen pressure during deposition and film thickness) for epitaxial stabilization of the ferroelectric phase is mapped. The remnant ferroelectric polarization, up to around 24 uC/cm2, depends on the amount of orthorhombic phase and interplanar spacing and increases with temperature and pressure for a fixed film thickness. The leakage current decreases with an increase in thickness or temperature, or when decreasing oxygen pressure. The coercive electric field (EC) depends on thickness (t) according to the coercive electric field (Ec) - thickness (t)-2/3 scaling, which is observed for the first time in ferroelectric hafnia, and the scaling extends to thicknesses down to around 5 nm. The proven ability to tailor the functional properties of high-quality epitaxial ferroelectric Hf0.5Zr0.5O2 films paves the way toward understanding their ferroelectric properties and prototy** devices. △ Less

Submitted 27 February, 2019; originally announced February 2019.

Journal ref: ACS Applied Electronic Materials 1, 220 (2019)

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

Authors: Jike Lyu, Ignasi Fina, Josep Fontcuberta, Florencio Sánchez

Abstract: Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane oriented, is stabilized in the films. The films present high remnant polarization Pr close to 20 μC/cm2, rivaling with equivalent epitaxial films on single crystalline oxide substrates. Retention time is longer than 10 years… ▽ More Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane oriented, is stabilized in the films. The films present high remnant polarization Pr close to 20 μC/cm2, rivaling with equivalent epitaxial films on single crystalline oxide substrates. Retention time is longer than 10 years for writing field of around 5 MV/cm, and the capacitors show endurance up to 1E9 cycles for writing voltage of around 4 MV/cm. It is found that the formation of the orthorhombic ferroelectric phase depends critically on the bottom electrode, being achieved on La0.67Sr0.33MnO3 but not on LaNiO3. The demonstration of excellent ferroelectric properties in epitaxial films of Hf0.5Zr0.5O2 on Si(001) is relevant towards fabrication of devices that require homogeneity in the nanometer scale, as well as for better understanding of the intrinsic properties of this promising ferroelectric oxide. △ Less

Submitted 14 February, 2019; originally announced February 2019.

Journal ref: ACS Applied Materials & Interfaces 11, 6224 (2019)

Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction

Authors: Hari Babu Vasili, Matheus Gamino, Jaume Gazquez, Florencio Sanchez, Manuel Valvidares, Pierluigi Gargiani, Eric Pellegrin, Josep Fontcuberta

Abstract: Pure spin currents hold promises for an energy-friendlier spintronics. They can be generated by a flow of charge along a non-magnetic metal having a large spin-orbit coupling. It produces a spin accumulation at its surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to a ferromagnetic instability and thus magnetic proximity e… ▽ More Pure spin currents hold promises for an energy-friendlier spintronics. They can be generated by a flow of charge along a non-magnetic metal having a large spin-orbit coupling. It produces a spin accumulation at its surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to a ferromagnetic instability and thus magnetic proximity effects can contribute to the observed angular-dependent magnetoresistance (ADMR). As interface phenomena govern the spin conductance across the metal/ferromagnetic-insulator heterostructures, unraveling these distinct contributions is pivotal to full understanding of spin current conductance. We report here x-ray absorption and magnetic circular dichroism (XMCD) at Pt-M and (Co,Fe)-L absorption edges and atomically-resolved energy loss electron spectroscopy (EELS) data of Pt/CoFe2O4 bilayers where CoFe2O4 layers have been capped by Pt grown at different temperatures. It turns out that the ADMR differs dramatically, being either dominated by spin Hall magnetoresistance (SMR) associated to spin Hall effect or anisotropic magnetoresistance (AMR). The XMCD and EELS data indicate that the Pt layer grown at room temperature does not display any magnetic moment, whereas when grown at higher temperature it is magnetic due to interfacial Pt-(Co,Fe) alloying. These results allow disentangling spin accumulation from interfacial chemical reconstructions and for tailoring the angular dependent magnetoresistance. △ Less

Submitted 7 March, 2018; originally announced March 2018.

Comments: ACS Applied Materials & Interfaces, 2018 (under revision)

Report number: Vol. 10 (14), pp 12031--12041

Journal ref: ACS Appl. Mater. Interfaces 2018

Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)

Authors: Jike Lyu, Ignasi Fina, Raul Solanas, Josep Fontcuberta, Florencio Sanchez

Abstract: Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 deg C wide. The deposition temperature critically affects the growth kinetics and thermodynamics balance, resulting on a high impact in the strain of the BaTiO3 polar axis, which can excee… ▽ More Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 deg C wide. The deposition temperature critically affects the growth kinetics and thermodynamics balance, resulting on a high impact in the strain of the BaTiO3 polar axis, which can exceed 2% in films thicker than 100 nm. The ferroelectric polarization scales with the strain and therefore deposition temperature can be used as an efficient tool to tailor ferroelectric polarization. The developed strategy overcomes the main limitations of the conventional strain engineering methodologies based on substrate selection: it can be applied to films on specific substrates including Si(001) and perovskites, and it is not restricted to ultrathin films. △ Less

Submitted 24 January, 2018; originally announced January 2018.

Comments: Scientific Reports, Open access, https://www.nature.com/articles/s41598-017-18842-5

Journal ref: Scientific Reports 8, 495 (2018)

Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctions

Authors: Greta Radaelli, Diego Gutiérrez, Mengdi Qian, Ignasi Fina, Florencio Sánchez, Lorenzo Baldrati, Jakoba Heidler, Cinthia Piamonteze, Riccardo Bertacco, Josep Fontcuberta

Abstract: Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extrem… ▽ More Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extremely sensitive to strain and thus can be radically different when integrated in epitaxial FTJs. Here we report a systematic study of large-area (A = 4 to 100 um2) Pt/La0.5Sr0.5MnO3/BaTiO3/La0.7Sr0.3MnO3 (Pt/HD/BTO/LSMO) FTJs, having different thicknesses of the ferroelectric (2-3nm) and HD layers (1-2nm), grown on substrates imposing either tensile (SrTiO3) or compressive (LaAlO3) strains. Room-temperature electric characterization of the FTJs shows polarization-controlled ON/ OFF states. Clear evidences of field-induced M/I transition (difference between junction resistance in OFF and ON state is increased of more than one order of magnitude) are observed in junctions prepared on SrTiO3 but the HD layer is generally metallic on LaAlO3. Moreover, the M/I transition is only confined in an interfacial layer of the slave film thus entailing an overall reduction of TER. The orderly results reported here give some hints towards selection of HD materials and substrates for optimal FTJ responsiveness. △ Less

Submitted 2 December, 2016; originally announced December 2016.

Comments: 20 pages

Journal ref: Adv. Electron. Mater. 2016, 1600368

Simultaneous imaging of strain waves and induced magnetization dynamics at the nanometer scale

Authors: Michael Foerster, Ferran Macià, Nahuel Statuto, Simone Finizio, Alberto Hernández-Mínguez, Sergi Lendínez, Paulo Santos, Josep Fontcuberta, Joan Manel Hernàndez, Mathias Kläui, Lucia Aballe

Abstract: Changes in strain can be used to modify electronic and magnetic properties in crystal structures, to manipulate nanoparticles and cells, or to control chemical reactions. The magneto-elastic (ME) effect--the change of magnetic properties caused by the elastic deformation (strain) of a magnetic material--has been proposed as an alternative approach to magnetic fields for the low power control of ma… ▽ More Changes in strain can be used to modify electronic and magnetic properties in crystal structures, to manipulate nanoparticles and cells, or to control chemical reactions. The magneto-elastic (ME) effect--the change of magnetic properties caused by the elastic deformation (strain) of a magnetic material--has been proposed as an alternative approach to magnetic fields for the low power control of magnetization states of nanoelements since it avoids charge currents, which entail ohmic losses. Multiferroic heterostructures \cite{Zheng2004} and nanocomposites have exploited this effect in search of electric control of magnetic states, mostly in the static regime. Quantitative studies combining strain and magnetization dynamics are needed for practical applications and so far, a high resolution technique for this has been lacking. Here, we have studied the effect of the dynamic strain accompanying a surface acoustic wave on magnetic nanostructures. We have simultaneously imaged the temporal evolution of both strain waves and magnetization dynamics of nanostructures at the picosecond timescale. The newly developed experimental technique, based on X-ray microscopy, is versatile and provides a pathway to the study of strain-induced effects at the nanoscale. Our results provide fundamental insight in the coupling between strain and magnetization in nanostructures at the picosecond timescale, having implications in the design of strain-controlled magnetostrictive nano-devices. △ Less

Submitted 9 November, 2016; originally announced November 2016.

Comments: 16pages and 3 fig (plus 4 pages and 2 figs in supplemeantray). 3 videos

An invisible non-volatile solid-state memory

Authors: J. Clarkson, C. Frontera, Z. Q. Liu, Y. Lee, J. Kim, K. Cordero, S. Wizotsky, F. Sanchez, J. Sort, S. L. Hsu, C Ko, J. Wu, H. M. Christen, J. T. Heron, D. G. Schlom, S. Salahuddin, L. Aballe, M. Foerster, N. Kioussis, J. Fontcuberta, I. Fina, R. Ramesh, X. Marti

Abstract: Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable res… ▽ More Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory. △ Less

Submitted 7 September, 2016; v1 submitted 12 April, 2016; originally announced April 2016.

Comments: 14 pages, 4 figures

Multiple strain-induced phase transitions in LaNiO3 thin films

Authors: M. C. Weber, M. Guennou, N. Dix, D. Pesquera, F. Sánchez, G. Herranz, J. Fontcuberta, L. López-Conesa, S. Estradé, F. Peiró, J. Iñiguez, J. Kreisel

Abstract: Strain effects on epitaxial thin films of LaNiO3 grown on different single crystalline substrates are studied by Raman scattering and first-principles simulation. New Raman modes, not present in bulk or fully-relaxed films, appear under both compressive and tensile strains, indicating symmetry reductions. Interestingly, the Raman spectra and the underlying crystal symmetry for tensile and compress… ▽ More Strain effects on epitaxial thin films of LaNiO3 grown on different single crystalline substrates are studied by Raman scattering and first-principles simulation. New Raman modes, not present in bulk or fully-relaxed films, appear under both compressive and tensile strains, indicating symmetry reductions. Interestingly, the Raman spectra and the underlying crystal symmetry for tensile and compressively strained films are different. Extensive map** of LaNiO3 phase stability is addressed by simulations, showing that a variety of crystalline phases are indeed stabilized under strain which may impact the electronic orbital hierarchy. The calculated Raman frequencies reproduce the principal features of the experimental spectra, supporting the validity of the multiple strain-driven structural transitions predicted by the simulations. △ Less

Submitted 2 March, 2016; originally announced March 2016.

Comments: 18 pages, 7 figures

Giant Optical Polarization Rotation Induced by Spin-Orbit Coupling in Polarons

Authors: Blai Casals, Rafael Cichelero, Pablo García Fernández, Javier Junquera, David Pesquera, Mariano Campoy-Quiles, Ingrid C. Infante, Florencio Sánchez, Josep Fontcuberta, Gervasi Herranz

Abstract: We have uncovered a giant gyrotropic magneto-optical response for doped ferromagnetic manganite La2/3Ca1/3MnO3 around the near room-temperature paramagnetic-to-ferromagnetic transition. At odds with current wisdom, where this response is usually assumed to be fundamentally fixed by the electronic band structure, we point to the presence of small polarons as the driving force for this unexpected ph… ▽ More We have uncovered a giant gyrotropic magneto-optical response for doped ferromagnetic manganite La2/3Ca1/3MnO3 around the near room-temperature paramagnetic-to-ferromagnetic transition. At odds with current wisdom, where this response is usually assumed to be fundamentally fixed by the electronic band structure, we point to the presence of small polarons as the driving force for this unexpected phenomenon. We explain the observed properties by the intricate interplay of mobility, Jahn-Teller effect and spin-orbit coupling of small polarons. As magnetic polarons are ubiquitously inherent to many strongly correlated systems, our results provide an original, general pathway towards the generation of gigantic gyrotropic responses that can be harnessed for nonreciprocal devices that exploit the polarization of light. △ Less

Submitted 22 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. Lett. 117, 026401 (2016)

Instability and Surface Potential Modulation of Self-Patterned (001)SrTiO3 Surfaces

Authors: Lucia Aballe, Sonia Matencio, Michael Foerster, Esther Barrena, Florencio Sanchez, Josep Fontcuberta, Carmen Ocal

Abstract: The (001)SrTiO3 crystal surface can be engineered to display a self-organized pattern of well-separated and nearly pure single-terminated SrO and TiO2 regions by high temperature annealing in oxidizing atmosphere. By using surface sensitive techniques we have obtained evidence of such surface chemical self-structuration in as-prepared crystals and unambiguously identified the local composition. Th… ▽ More The (001)SrTiO3 crystal surface can be engineered to display a self-organized pattern of well-separated and nearly pure single-terminated SrO and TiO2 regions by high temperature annealing in oxidizing atmosphere. By using surface sensitive techniques we have obtained evidence of such surface chemical self-structuration in as-prepared crystals and unambiguously identified the local composition. The contact surface potential at regions initially consisting of majority single terminations (SrO and TiO2) is determined to be smaller for SrO than for TiO2, in agreement with theoretical predictions, although the measured difference below 100 meV is definitely smaller than theoretical predictions for ideally pure single-terminated SrO and TiO2 surfaces. These relative values are maintained if samples are annealed in UHV up to 200 degrees Celsius. Annealing in UHV at higher temperature (400 degrees Celsius) preserves the surface morphology of self-assembled TiO2 and SrO rich regions, although a non-negligible chemical intermixing is observed. The most dramatic consequence is that the surface potential is reversed. It thus follows that electronic and chemical properties of (001)SrTiO3, widely used in oxide thin films growth, can largely vary before growth starts in a manner strongly dependent on temperature and pressure conditions. △ Less

Submitted 13 October, 2015; originally announced October 2015.

Journal ref: Chemistry of Materials 27, 6198 (2015)

Polar domain walls trigger magnetoelectric coupling

Authors: Josep Fontcuberta, Vassil Skumryev, Vladimir Laukhin, Xavier Granados, Ekhard K. H. Salje

Abstract: Interface physics in oxide heterostructures is pivotal in material's science. Domain walls (DWs) in ferroic systems are examples of naturally occurring interfaces, where order parameter of neighboring domains is modified and emerging properties may develop. Here we show that electric tuning of ferroelastic domain walls in SrTiO3 leads to dramatic changes of the magnetic domain structure of a neigh… ▽ More Interface physics in oxide heterostructures is pivotal in material's science. Domain walls (DWs) in ferroic systems are examples of naturally occurring interfaces, where order parameter of neighboring domains is modified and emerging properties may develop. Here we show that electric tuning of ferroelastic domain walls in SrTiO3 leads to dramatic changes of the magnetic domain structure of a neighboring magnetic layer (La1/2Sr1/2MnO3) epitaxially clamped on a SrTiO3 substrate. We show that by exploiting the resposiveness of DWs nanoregions to external stimuli, even in absence of any domain contribution, prominent and adjustable macroscopic reactions of neighboring layers can be obtained. We conclude that polar DWs, known to exist in other materials, can be used to trigger tunable responses and may lead to new ways for manipulation of interfacial emerging properties. △ Less

Submitted 7 October, 2015; originally announced October 2015.

Journal ref: Scientific Reports | 5:13784| (2015)

Multiferroic RMnO3 thin films

Authors: Josep Fontcuberta

Abstract: Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO3 perovskites are central to this progress providing a suitable platf… ▽ More Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO3 perovskites are central to this progress providing a suitable platform to tailor spin-spin and spin-lattice interactions. With views towards applications, development of thin films of multiferroic materials have also progressed enormously and nowadays thin film manganites are available with properties mimicking those of bulk compounds. Here we review achievements on the growth and characterization of magnetic and ferroelectric properties of hexagonal and orthorhombic RMnO3 epitaxial thin films, discuss some challenging issues and we suggest some guidelines for future research and developments. △ Less

Submitted 7 October, 2015; originally announced October 2015.

Comments: Review paper

Journal ref: C. R. Physique 16, 204-226 (2015)

Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers

Authors: Miren Isasa, Saül Vélez, Edurne Sagasta, Amilcar Bedoya-Pinto, Nico Dix, Florencio Sánchez, Luis E. Hueso, Josep Fontcuberta, Fèlix Casanova

Abstract: We study the spin Hall magnetoresistance (SMR) in Pt grown $\textit{in situ}$ on CoFe$_2$O$_4$ (CFO) ferrimagnetic insulating (FMI) films. A careful analysis of the angle-dependent and field-dependent longitudinal magnetoresistance indicates that the SMR contains a contribution that does not follow the bulk magnetization of CFO but it is a fingerprint of the complex magnetism at the surface of the… ▽ More We study the spin Hall magnetoresistance (SMR) in Pt grown $\textit{in situ}$ on CoFe$_2$O$_4$ (CFO) ferrimagnetic insulating (FMI) films. A careful analysis of the angle-dependent and field-dependent longitudinal magnetoresistance indicates that the SMR contains a contribution that does not follow the bulk magnetization of CFO but it is a fingerprint of the complex magnetism at the surface of the CFO layer, thus signaling SMR as a tool for map** surface magnetization. A systematic study of the SMR for different temperatures and CFO thicknesses gives us information impossible to obtain with any standard magnetometry technique. On one hand, surface magnetization behaves independently of the CFO thickness and does not saturate up to high fields, evidencing that the surface has its own anisotropy. On the other hand, characteristic zero-field magnetization steps are not present at the surface while they are relevant in the bulk, strongly suggesting that antiphase boundaries are the responsible of such intriguing features. In addition, a contribution from ordinary magnetoresistance of Pt is identified, which is only distinguishable due to the low resistivity of the $\textit{in-situ}$ grown Pt. △ Less

Submitted 28 July, 2016; v1 submitted 6 October, 2015; originally announced October 2015.

Comments: 19 pages, 8 figures, Supplemental Material

Journal ref: Physical Review Applied 6, 034007 (2016)

Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces

Authors: M. Valvidares, N. Dix, M. Isasa, K. Ollefs, F. Wilhelm, A. Rogalev, F. Sánchez, E. Pellegrin, A. Bedoya-Pinto, P. Gargiani, L. E. Hueso, F. Casanova, J. Fontcuberta

Abstract: Ultra-thin Pt films grown on insulating ferrimagnetic CoFe2O4 (111) epitaxial films display a magnetoresistance upon rotating the magnetization of the magnetic layer. We report here X-ray magnetic circular dichroism (XMCD) recorded at Pt-L2,3 and Pt-M3 edges. The results indicate that the Pt magnetic moment, if any, is below the detection limit (< 0.001 μ$_B$/Pt), thus strongly favoring the view t… ▽ More Ultra-thin Pt films grown on insulating ferrimagnetic CoFe2O4 (111) epitaxial films display a magnetoresistance upon rotating the magnetization of the magnetic layer. We report here X-ray magnetic circular dichroism (XMCD) recorded at Pt-L2,3 and Pt-M3 edges. The results indicate that the Pt magnetic moment, if any, is below the detection limit (< 0.001 μ$_B$/Pt), thus strongly favoring the view that the presence of CoFe2O4 does not induce the formation of magnetic moments in Pt. Therefore, the observed magnetoresistance cannot be attributed to some sort of proximity-induced magnetic moments at Pt ions and subsequent magnetic-field dependent scattering. It thus follows that either bulk (spin Hall and Inverse spin Hall Effects) or interface (Rashba) spin-orbit related effects dominate the observed magnetoresistance. Furthermore, comparison of bulk magnetization and XMCD data at (Fe,Co)-L2,3 edges suggests the presence of some spin disorder in the CoFe2O4 layer which may be relevant for the observed anomalous non-saturating field-dependence of spin Hall magnetoresistance. △ Less

Submitted 24 May, 2016; v1 submitted 5 October, 2015; originally announced October 2015.

Comments: 14 pages, 5 figures PDF of revised manuscript as finally accepted for publication in Phys. Rev. B

Journal ref: Physical Review B 93, 214415 (2016)

Conducting interfaces between amorphous oxide layers and SrTiO3(110) and SrTiO3(111)

Authors: Mateusz Scigaj, Jaume Gazquez, Maria Varela, Josep Fontcuberta, Gervasi Herranz, Florencio Sanchez

Abstract: Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above a critical thickness tc. Here we show that tc for a-LAO is not depending on the substrate orientation, i.e. tc (a-LAO/(110)STO) ~ tc(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorp… ▽ More Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above a critical thickness tc. Here we show that tc for a-LAO is not depending on the substrate orientation, i.e. tc (a-LAO/(110)STO) ~ tc(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: tc(a-LAO/(110)STO) < tc(a-YSZ/(110)STO) < tc(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather than orientational-dependent enthalpy vacancy formation and diffusion. Scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces. △ Less

Submitted 28 September, 2015; originally announced September 2015.

Journal ref: Solid State Ionics 281, 68 (2015)

Selecting Steady and Transient Photocurrent Response in BaTiO3 Films

Authors: Fanmao Liu, Ignasi Fina, Diego Gutiérrez, Greta Radaelli, Riccardo Bertacco, Josep Fontcuberta

Abstract: The ferroelectric polarization and short-circuit photocurrent in BaTiO3 thin films have been studied for different contact configurations that allow to measure the photoresponse and polarization under the presence of large or negligible imprint field. It is found that in all cases, the direction of the photocurrent is dictated by the depolarizing field and ultimately by the film polarization, with… ▽ More The ferroelectric polarization and short-circuit photocurrent in BaTiO3 thin films have been studied for different contact configurations that allow to measure the photoresponse and polarization under the presence of large or negligible imprint field. It is found that in all cases, the direction of the photocurrent is dictated by the depolarizing field and ultimately by the film polarization, with a negligible contribution of the imprint electric field. However, dramatic differences are found in their time-dependent photoresponse. Whereas in presence of imprint, steady photocurrents are observed under suitable illumination, transient photocurrents are generated in absence of imprint. It is argued that this distinct behavior is determined by the different Schottky barrier height at electrodes which thus offers a simple way to tune the film photoresponse. These findings could be exploited for electro-optic read-out and writing of ferroelectric memories. △ Less

Submitted 6 July, 2015; originally announced July 2015.

Room-temperature antiferromagnetic memory resistor

Authors: X. Marti, I. Fina, C. Frontera, Jian Liu, P. Wadley, Q. He, R. J. Paull, J. D. Clarkson, J. Kudrnovský, I. Turek, J. Kuneš, D. Yi, J. -H. Chu, C. T. Nelson, L. You, E. Arenholz, S. Salahuddin, J. Fontcuberta, T. Jungwirth, R. Ramesh

Abstract: The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external magnetic field, and the FM stray field is used for reading. However, the latest generation of magnetic random access memories demonstrates a new efficient approach… ▽ More The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external magnetic field, and the FM stray field is used for reading. However, the latest generation of magnetic random access memories demonstrates a new efficient approach in which magnetic fields are replaced by electrical means for reading and writing. This concept may eventually leave the sensitivity of FMs to magnetic fields as a mere weakness for retention and the FM stray fields as a mere obstacle for high-density memory integration. In this paper we report a room-temperature bistable antiferromagnetic (AFM) memory which produces negligible stray fields and is inert in strong magnetic fields. We use a resistor made of an FeRh AFM whose transition to a FM order 100 degrees above room-temperature, allows us to magnetically set different collective directions of Fe moments. Upon cooling to room-temperature, the AFM order sets in with the direction the AFM moments pre-determined by the field and moment direction in the high temperature FM state. For electrical reading, we use an antiferromagnetic analogue of the anisotropic magnetoresistance (AMR). We report microscopic theory modeling which confirms that this archetypical spintronic effect discovered more than 150 years ago in FMs, can be equally present in AFMs. Our work demonstrates the feasibility to realize room-temperature spintronic memories with AFMs which greatly expands the magnetic materials base for these devices and offers properties which are unparalleled in FMs. △ Less

Submitted 18 March, 2015; originally announced March 2015.

Multiferroic Iron Oxide Thin Films at Room-Temperature

Authors: Marti Gich, Ignasi Fina, Alessio Morelli, Florencio Sanchez, Marin Alexe, Jaume Gazquez, Josep Fontcuberta, Anna Roig

Abstract: In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these uncommon materials typically display insignificant values of the remanent moment in one of the ferroic orders or are complex multicomponent oxides which will be very c… ▽ More In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these uncommon materials typically display insignificant values of the remanent moment in one of the ferroic orders or are complex multicomponent oxides which will be very challenging to integrate in devices. Here we report on the strategy to stabilize the metastable epsilon-Fe2O3 in thin film form, and we show that besides its already known ferrimagnetic nature, the films are also ferroelectric at 300 K with a remanent polarization of 1 microC/cm2. The film polarization shows long retention times and can be switched under small applied voltages. These characteristics make of epsilon-Fe2O3 the first single-ion transition-metal oxide which is ferro(ferri)magnetic and ferroelectric at room temperature. The simple composition of this new multiferroic oxide and the discovery of a robust path for its thin film growth may boost the exploitation of epsilon-Fe2O3 in novel devices. △ Less

Submitted 19 May, 2014; originally announced May 2014.

Comments: 27 pages, 11 figures; Advanced Materials 2014

Tailored surfaces of perovskite oxide substrates for conducted growth of thin films

Authors: Florencio Sanchez, Carmen Ocal, Josep Fontcuberta

Abstract: Oxide electronics relies on the availability of epitaxial oxide thin films. The extreme flexibility of the chemical composition of ABO3 perovskites and the broad spectrum of properties they cover, inspire the creativity of scientists and place perovskites in the lead of functional materials for advanced technologies. Moreover, emerging properties are being discovered at interfaces between distinct… ▽ More Oxide electronics relies on the availability of epitaxial oxide thin films. The extreme flexibility of the chemical composition of ABO3 perovskites and the broad spectrum of properties they cover, inspire the creativity of scientists and place perovskites in the lead of functional materials for advanced technologies. Moreover, emerging properties are being discovered at interfaces between distinct perovskites that could not be anticipated on the basis of those of the adjacent epitaxial layers. All dreamed new prospects require the use of suitable substrates for epitaxial growth. Perovskite single crystals are the workhorses of this activity and understanding and controlling their surface properties have become critical. In this tutorial review we will chiefly focus on the impact of the morphology and composition of the surface of ABO3 perovskite substrates on the growth mechanisms and properties of thin films epitaxially grown on them. As SrTiO3 is the most popular substrate, we will mostly concentrate on describing the current understanding and achievements for it. Illustrative examples of other perovskite substrates (LaAlO3, LSAT and DyScO3) will be also included. We will show that distinct chemical terminations can exist on the surfaces used for growth and we will review methods employed either to select the most appropriate one for specific growth to allow, for instance, tailoring the ultimate outmost epilayer, or to induce self-ordering to engineer long-range nanoscale patterns of chemical terminations. We will demonstrate the capacity of this knowledge by the growth of low-dimensional organic and inorganic structures. △ Less

Submitted 29 March, 2014; originally announced March 2014.

Comments: Tutorial review: F. Sanchez, C. Ocal and J. Fontcuberta, Chemical Society Reviews, 43, 2272 (2014) (you can contact [email protected] for a pdf)

Laterally-confined two-dimensional electron gases in self-patterned LaAlO3/SrTiO3 interfaces

Authors: M. Foerster, R. Bachelet, V. Laukhin, J. Fontcuberta, G. Herranz, F. Sanchez

Abstract: A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate surfaces with self-patterned chemical termination, which is replicated by the LaAlO3 layer, resulting in a modulated LaO/TiO2 and AlO2/SrO interface composition. We… ▽ More A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate surfaces with self-patterned chemical termination, which is replicated by the LaAlO3 layer, resulting in a modulated LaO/TiO2 and AlO2/SrO interface composition. We demonstrate the confinement of the conducting interface forming either long-range ordered nanometric stripes or isolated regions. Our results demonstrate that engineering the interface chemical termination is a suitable strategy towards nanoscale lateral confinement of two-dimensional high-mobility systems. △ Less

Submitted 22 January, 2014; originally announced January 2014.

Journal ref: Applied Physics Letters 100, 231607 (2012)

Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects

Authors: Miren Isasa, Amilcar Bedoya-Pinto, Saül Vélez, Federico Golmar, Florencio Sánchez, Luis E. Hueso, Josep Fontcuberta, Fèlix Casanova

Abstract: We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when Pt/CFO samples are prepared in situ, in a single process. The spin-mi… ▽ More We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when Pt/CFO samples are prepared in situ, in a single process. The spin-mixing interface conductance, the key parameter governing SMR and other relevant spin-dependent phenomena such as spin pum** or spin Seebeck effect, is found to be different depending on the crystallographic orientation of CFO, highlighting the role of the composition and density of magnetic ions at the interface on spin mixing. △ Less

Submitted 9 October, 2014; v1 submitted 4 July, 2013; originally announced July 2013.

Comments: 13 pages, 5 figures

Journal ref: Applied Physics Letters 105, 142402 (2014)

Orientational tuning of the 2D-superconductivity in LaAlO3/SrTiO3 interfaces

Authors: G. Herranz, N. Bergeal, J. Lesueur, J. Gazquez, M. Scigaj, N. Dix, F. Sanchez, J. Fontcuberta

Abstract: The discovery of a two-dimensional (2D) electron gas at the (110)-oriented LaAlO3/SrTiO3 in- terface provided us with the opportunity to probe the effect of crystallographic orientation and the ensuing electronic reconstructions on interface properties beyond the conventional (001)-orientation. At temperatures below 200 mK, we have measured 2D superconductivity with a spatial extension significant… ▽ More The discovery of a two-dimensional (2D) electron gas at the (110)-oriented LaAlO3/SrTiO3 in- terface provided us with the opportunity to probe the effect of crystallographic orientation and the ensuing electronic reconstructions on interface properties beyond the conventional (001)-orientation. At temperatures below 200 mK, we have measured 2D superconductivity with a spatial extension significantly larger (d approx. 24 - 30 nm) than previously reported for (001)-oriented LaAlO3/SrTiO3 interfaces (d approx. 10 nm). The more extended superconductivity brings about the absence of violation of the Pauli paramagnetic limit for the upper critical fields, signaling the distinctive nature of the electronic structure of the (110)-oriented interface with respect to their (001)-counterparts △ Less

Submitted 10 May, 2013; originally announced May 2013.

Comments: 5 pages, 5 figures

Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure

Authors: X. Marti, I. Fina, Di Yi, Jian Liu, Jiun-Haw Chu, C. Rayan-Serrao, S. Suresha, J. Železný, T. Jungwirth, J. Fontcuberta, R. Ramesh

Abstract: Lord Kelvin with his discovery of the anisotropic magnetoresistance (AMR) phenomenon in Ni and Fe was 70 years ahead of the formulation of relativistic quantum mechanics the effect stems from, and almost one and a half century ahead of spintronics whose first commercial applications relied on the AMR. Despite the long history and importance in magnetic sensing and memory technologies, the microsco… ▽ More Lord Kelvin with his discovery of the anisotropic magnetoresistance (AMR) phenomenon in Ni and Fe was 70 years ahead of the formulation of relativistic quantum mechanics the effect stems from, and almost one and a half century ahead of spintronics whose first commercial applications relied on the AMR. Despite the long history and importance in magnetic sensing and memory technologies, the microscopic understanding of the AMR has struggled to go far beyond the basic notion of a relativistic magnetotransport phenomenon arising from combined effects on diffusing carriers of spin-orbit coupling and broken symmetry of a metallic ferromagnet. Our work demonstrates that even this seemingly generic notion of the AMR phenomenon needs revisiting as we observe the ohmic AMR effect in a nano-scale film of an antiferromagnetic (AFM) semiconductor Sr2IrO4 (SIO). Our work opens the recently proposed path for integrating semiconducting and spintronic technologies in AFMs. SIO is a particularly favorable material for exploring this path since its semiconducting nature is entangled with the AFM order and strong spin-orbit coupling. For the observation of the low-field Ohmic AMR in SIO we prepared an epitaxial heterostructure comprising a nano-scale SIO film on top of an epilayer of a FM metal La2/3Sr1/3MnO3 (LSMO). This allows the magnetic field control of the orientation of AFM spins in SIO via the exchange spring effect at the FM-AFM interface. △ Less

Submitted 19 March, 2013; originally announced March 2013.

Journal ref: Nature Communications 5, Article number: 4671 (2014)

X-ray interference effects on the determination of structural data in ultrathin La2/3Sr1/3MnO3 epitaxial thin films

Authors: D. Pesquera, R. Bachelet, G. Herranz, J. Fontcuberta, X. Marti, V. Holy

Abstract: We analyze X-ray diffraction data used to extract cell parameters of ultrathin films on closely matching substrates. We focus on epitaxial La2/3Sr1/3MnO3 films grown on (001) SrTiO3 single crystalline substrates. It will be shown that, due to extremely high structural similarity of film and substrate, data analysis must explicitly consider the distinct phase of the diffracted waves by substrate an… ▽ More We analyze X-ray diffraction data used to extract cell parameters of ultrathin films on closely matching substrates. We focus on epitaxial La2/3Sr1/3MnO3 films grown on (001) SrTiO3 single crystalline substrates. It will be shown that, due to extremely high structural similarity of film and substrate, data analysis must explicitly consider the distinct phase of the diffracted waves by substrate and films to extract reliable unit cell parameters. The implications of this finding for the understanding of strain effects in ultrathin films and interfaces will be underlined △ Less

Submitted 28 January, 2013; originally announced January 2013.

Journal ref: Appl. Phys. Lett. 99, 221901 (2011)

High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces

Authors: Gervasi Herranz, Florencio Sánchez, Nico Dix, Mateusz Scigaj, Josep Fontcuberta

Abstract: In recent years, striking discoveries have revealed that two-dimensional electron liquids (2DEL) confined at the interface between oxide band-insulators can be engineered to display a high mobility transport. The recognition that only few interfaces appear to suit hosting 2DEL is intriguing and challenges the understanding of these emerging properties not existing in bulk. Indeed, only the neutral… ▽ More In recent years, striking discoveries have revealed that two-dimensional electron liquids (2DEL) confined at the interface between oxide band-insulators can be engineered to display a high mobility transport. The recognition that only few interfaces appear to suit hosting 2DEL is intriguing and challenges the understanding of these emerging properties not existing in bulk. Indeed, only the neutral TiO2 surface of (001)SrTiO3 has been shown to sustain 2DEL. We show that this restriction can be surpassed: (110) and (111) surfaces of SrTiO3 interfaced with epitaxial LaAlO3 layers, above a critical thickness, display 2DEL transport with mobilities similar to those of (001)SrTiO3. Moreover we show that epitaxial interfaces are not a prerequisite: conducting (110) interfaces with amorphous LaAlO3 and other oxides can also be prepared. These findings open a new perspective both for materials research and for elucidating the ultimate microscopic mechanism of carrier do**. △ Less

Submitted 30 October, 2012; originally announced October 2012.

Comments: Published in Scientific Reports (open access jounal of the Nature Publishing Group)

Journal ref: Scientific Reports 2,758 (2012)

Probing individual layers in functional oxide multilayers by wavelength-dependent Raman scattering

Authors: J. Kreisel, M. C. Weber, N. Dix, F. Sánchez, P. A. Thomas, J. Fontcuberta

Abstract: Integration of functional oxides on silicon requires the use of complex heterostructures involving oxides of which the structure and properties strongly depend on the strain state and strain-mediated interface coupling. The experimental observation of strain-related effects of the individual components remains challenging. Here we report a Raman scattering investigation of complex multilayer BaTiO… ▽ More Integration of functional oxides on silicon requires the use of complex heterostructures involving oxides of which the structure and properties strongly depend on the strain state and strain-mediated interface coupling. The experimental observation of strain-related effects of the individual components remains challenging. Here we report a Raman scattering investigation of complex multilayer BaTiO3/LaNiO3/CeO2/YSZ thin film structures on silicon. It is shown that the Raman signature of the multilayers differs significantly for three different laser wavelengths (633, 442 and 325 nm). Our results demonstrate that Raman scattering at various wavelengths allows both the identification of the individual layers of a functional oxide multilayers and monitoring their strain state. It is shown that all layers of the investigated multilayer are strained with respect to the bulk reference samples, and that strain induces a new crystal structure in the embedded LaNiO3. Based on this, we demonstrate that Raman scattering at various wavelengths offers a well-adapted, non-destructive probe for the investigation of strain and structure changes, even in complex thin film heterostructures. △ Less

Submitted 17 July, 2012; v1 submitted 15 May, 2012; originally announced May 2012.

Comments: Revised version, accepted for publication in Adv. Funct. Mater

Phase transition close to room temperature in BiFeO3 thin films

Authors: J. Kreisel, P. Jadhav, O. Chaix-Pluchery, M. Varela, N. Dix, F. Sanchez, J. Fontcuberta

Abstract: BiFeO3 (BFO) multiferroic oxide has a complex phase diagram that can be mapped by appropriately substrate-induced strain in epitaxial films. By using Raman spectroscopy, we conclusively show that films of the so-called supertetragonal T-BFO phase, stabilized under compressive strain, displays a reversible temperature-induced phase transition at about 100\circ, thus close to room temperature. BiFeO3 (BFO) multiferroic oxide has a complex phase diagram that can be mapped by appropriately substrate-induced strain in epitaxial films. By using Raman spectroscopy, we conclusively show that films of the so-called supertetragonal T-BFO phase, stabilized under compressive strain, displays a reversible temperature-induced phase transition at about 100\circ, thus close to room temperature. △ Less

Submitted 28 July, 2011; originally announced July 2011.

Comments: accepted in J. Phys.: Condens. Matter (Fast Track Communication)

Journal ref: J. Phys.: Condens. Matter 23 (2011) 342202

Strain analysis of multiferroic BiFeO3-CoFe2O4 nanostructures by Raman scattering

Authors: O. Chaix-Pluchery, C. Cochard, P. Jadhav, J. Kreisel, N. Dix, F. Sanchez, J. Fontcuberta

Abstract: We report a Raman scattering investigation of columnar BiFeO3-CoFe2O4 (BFO-CFO) epitaxial thin film nanostructures, where BFO pillars are embedded in a CFO matrix. The feasibility of a strain analysis is illustrated through an investigation of two nanostructures with different BFO-CFO ratios. We show that the CFO matrix presents the same strain state in both nanostructures, while the strain state… ▽ More We report a Raman scattering investigation of columnar BiFeO3-CoFe2O4 (BFO-CFO) epitaxial thin film nanostructures, where BFO pillars are embedded in a CFO matrix. The feasibility of a strain analysis is illustrated through an investigation of two nanostructures with different BFO-CFO ratios. We show that the CFO matrix presents the same strain state in both nanostructures, while the strain state of the BFO pillars depends on the BFO/CFO ratio with an increasing tensile strain along the out-of-plane direction with decreasing BFO content. Our results demonstrate that Raman scattering allows monitoring strain states in complex 3D multiferroic pillar/matrix composites. △ Less

Submitted 23 July, 2011; originally announced July 2011.

Comments: revised version submitted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 99, 072901 (2011)

Ferroelectricity and strain effects in orthorhombic YMnO3 thin films

Authors: J. Fontcuberta, I. Fina, L. Fàbrega, F. Sánchez, X. Martí, V. Skumryev

Abstract: We report on the dielectric properties of epitaxial [001] and [100]-textured thin films of antiferromagnetic orthorhombic YMnO3 and their variation under compressive epitaxial strain. It is found that weakly strained YMnO3 films are ferroelectric with a polarization along c-axis switchable by 90 degrees by an external magnetic field. When reducing film thickness and increasing epitaxial strain, th… ▽ More We report on the dielectric properties of epitaxial [001] and [100]-textured thin films of antiferromagnetic orthorhombic YMnO3 and their variation under compressive epitaxial strain. It is found that weakly strained YMnO3 films are ferroelectric with a polarization along c-axis switchable by 90 degrees by an external magnetic field. When reducing film thickness and increasing epitaxial strain, the ferroelectric order is progressively suppressed. Analysis of structural, dielectric and magnetic data indicates that suppression of ferroelectricity when reducing thickness is accompanied by an enlarged ratio a/b of the in-plane cell parameters of the orthorhombic structure and the appearance of a net magnetization. All results can be well described by considering the multiferroic phase diagram of orthorhombic manganites. △ Less

Submitted 14 December, 2010; originally announced December 2010.

Comments: Accepted: Phase Transitions

Strain-driven non-collinear magnetic ordering in orthorhombic epitaxial YMnO3 thin films

Authors: X. Marti, V. Skumryev, V. Laukhin, R. Bachelet, C. Ferrater, M. V. García-Cuenca, M. Varela, F. Sánchez, J. Fontcuberta

Abstract: We show that using epitaxial strain and chemical pressure in orthorhombic YMnO3 and Co-substituted (YMn0.95Co0.05O3) thin films, a ferromagnetic response can be gradually introduced and tuned. These results, together with the measured anisotropy of the magnetic response, indicate that the unexpected observation of ferromagnetism in orthorhombic o-RMnO3 (R= Y, Ho, Tb, etc) films originates from str… ▽ More We show that using epitaxial strain and chemical pressure in orthorhombic YMnO3 and Co-substituted (YMn0.95Co0.05O3) thin films, a ferromagnetic response can be gradually introduced and tuned. These results, together with the measured anisotropy of the magnetic response, indicate that the unexpected observation of ferromagnetism in orthorhombic o-RMnO3 (R= Y, Ho, Tb, etc) films originates from strain-driven breaking of the fully compensated magnetic ordering by pushing magnetic moments away from the antiferromagnetic [010] axis. We show that the resulting canting angle and the subsequent ferromagnetic response, gradually increase (up to ~ 1.2\degree) by compression of the unit cell. We will discuss the relevance of these findings, in connection to the magnetoelectric response of orthorhombic manganites. △ Less

Submitted 12 February, 2011; v1 submitted 20 October, 2010; originally announced October 2010.

Comments: Text + Figs Accepted in J. Appl. Phys

Journal ref: J. Appl. Phys. 108, 123917 (2010)

Magnetization Reversal by Electric-Field Decoupling of Magnetic and Ferroelectric Domains Walls in Multiferroic-Based Heterostructures

Authors: V. Skumryev, V. Laukhin, I. Fina, X. Martí, F. Sánchez, M. Gospodinov, J. Fontcuberta

Abstract: We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO3) can be speedily reversed by electric field pulsing, and the sign of the magnetic exchange bias can switch and recover isothermally. As LuMnO3 is not ferroelastic, our data conclusively show that this switching is not mediated by strain effects but is a unique electric-field driven deco… ▽ More We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO3) can be speedily reversed by electric field pulsing, and the sign of the magnetic exchange bias can switch and recover isothermally. As LuMnO3 is not ferroelastic, our data conclusively show that this switching is not mediated by strain effects but is a unique electric-field driven decoupling of the ferroelectric and ferromagnetic domains walls. Their distinct dynamics are essential for the observed magnetic switching. △ Less

Submitted 4 September, 2010; originally announced September 2010.

Andreev reflection in ferrimagnetic CoFe2O4/SrRuO3 spin filters

Authors: Franco Rigato, Samanta Piano, Michael Foerster, Filippo Giubileo, Anna Maria Cucolo, Josep Fontcuberta

Abstract: We have performed point contact spectroscopy measurements on a sample constituted by a metallic ferromagnetic oxide (SrRuO_3) bottom electrode and a tunnel ferrimagnetic (CoFe_2O_4) barrier. Andreev reflection is observed across the tunnel barrier. From the comparison of Andreev reflection in SrRuO3 and across the CoFe_2O_4 barrier we infer that the ferrimagnetic barrier has a spin filter efficien… ▽ More We have performed point contact spectroscopy measurements on a sample constituted by a metallic ferromagnetic oxide (SrRuO_3) bottom electrode and a tunnel ferrimagnetic (CoFe_2O_4) barrier. Andreev reflection is observed across the tunnel barrier. From the comparison of Andreev reflection in SrRuO3 and across the CoFe_2O_4 barrier we infer that the ferrimagnetic barrier has a spin filter efficiency not larger than +13%. The observation of a moderate and positive spin filtering is discussed in the context of the microstructure of the barriers and symmetry-related spin filtering effects. △ Less

Submitted 26 April, 2010; originally announced April 2010.

Comments: 13 pages, 5 figures. To appear in Phys. Rev. B.

Journal ref: Phys. Rev. B 81, 174415 (2010)

Strain-driven elastic and orbital-ordering effects on thickness-dependent properties of manganite thin films

Authors: I. C. Infante, F. Sánchez, J. Fontcuberta, M. Wojcik, E. Jedryka, S. Estradé, F. Peiró, J. Arbiol, V. Laukhin, J. P. Espinós

Abstract: We report on the structural and magnetic characterization of (110) and (001) La2/3Ca1/3MnO3 (LCMO) epitaxial thin films simultaneously grown on (110) and (001)SrTiO3 substrates, with thicknesses t varying between 8 nm and 150 nm. It is found that while the in-plane interplanar distances of the (001) films are strongly clamped to those of the substrate and the films remain strained up to well abo… ▽ More We report on the structural and magnetic characterization of (110) and (001) La2/3Ca1/3MnO3 (LCMO) epitaxial thin films simultaneously grown on (110) and (001)SrTiO3 substrates, with thicknesses t varying between 8 nm and 150 nm. It is found that while the in-plane interplanar distances of the (001) films are strongly clamped to those of the substrate and the films remain strained up to well above t=100 nm, the (110) films relax much earlier. Accurate determination of the in-plane and out-of-plane interplanar distances has allowed concluding that in all cases the unit cell volume of the manganite reduces gradually when increasing thickness, approaching the bulk value. It is observed that the magnetic properties (Curie temperature and saturation magnetization) of the (110) films are significantly improved compared to those of (001) films. These observations, combined with 55Mn-nuclear magnetic resonance data and X-ray photoemission spectroscopy, signal that the depression of the magnetic properties of the more strained (001)LCMO films is not caused by an elastic deformation of the perovskite lattice but rather due to the electronic and chemical phase separation caused by the substrate-induced strain. On the contrary, the thickness dependence of the magnetic properties of the less strained (110)LCMO films are simply described by the elastic deformation of the manganite lattice. We will argue that the different behavior of (001) and (110)LCMO films is a consequence of the dissimilar electronic structure of these interfaces. △ Less

Submitted 27 August, 2007; originally announced August 2007.

Comments: 16 pages, 15 figures

Reversible Ferromagnetic Switching in Zno:(Co,Mn) Powders

Authors: D. Rubi, J. Fontcuberta, A. Calleja, Ll. Aragones, X. G. Capdevila, M. Segarra

Abstract: We report here on the magnetic properties of ZnO:Mn and ZnO:Co doped nanoparticles. We have found that the ferromagnetism of ZnO:Mn can be switched on and off by consecutive low-temperature annealings in O2 and N2 respectively, while the opposite phenomenology was observed for ZnO:Co. These results suggest that different defects (presumably n-type for ZnO:Co and p-type for ZnO:Mn) are required t… ▽ More We report here on the magnetic properties of ZnO:Mn and ZnO:Co doped nanoparticles. We have found that the ferromagnetism of ZnO:Mn can be switched on and off by consecutive low-temperature annealings in O2 and N2 respectively, while the opposite phenomenology was observed for ZnO:Co. These results suggest that different defects (presumably n-type for ZnO:Co and p-type for ZnO:Mn) are required to induce a ferromagnetic coupling in each case. We will argue that ferromagnetism is likely to be restricted to a very thin, nanometric layer, at the grain surface. These findings reveal and give insight into the dramatic relevance of surface effects for the occurrence of ferromagnetism in ZnO doped oxides. △ Less

Submitted 19 January, 2007; originally announced January 2007.

Comments: 20 pages, 4 figures

Magnetoelectric coupling in epitaxial orthorhombic YMnO3 thin films

Authors: X. Marti, V. Skumryev, V. Laukhin, F. Sanchez, M. V. Garcia-Cuenca, C. Ferrater, M. Varela, J. Fontcuberta

Abstract: We have grown epitaxial thin-films of the orthorhombic phase of YMnO3 oxide on Nb:SrTiO3(001) substrates and their structure, magnetic and dielectric response have been measured. We have found that a substrate-induced strain produces an in-plane compression of the YMnO3 unit cell. The temperature-dependent magnetization curves display a significant ZFC-FC hysteresis at temperatures below the Nee… ▽ More We have grown epitaxial thin-films of the orthorhombic phase of YMnO3 oxide on Nb:SrTiO3(001) substrates and their structure, magnetic and dielectric response have been measured. We have found that a substrate-induced strain produces an in-plane compression of the YMnO3 unit cell. The temperature-dependent magnetization curves display a significant ZFC-FC hysteresis at temperatures below the Neel temperature (TN around 40K). The dielectric constant increases gradually (up to 26%) below TN and mimics the ZFC magnetization curve. We argue that these effects are a manifestation of magnetoelectric coupling in thin films and that the magnetic structure of YMnO3 can be controlled by substrate selection. △ Less

Submitted 16 January, 2007; originally announced January 2007.

Comments: Submitted

Electric field effects on magnetotransport properties of multiferroic Py/YMnO3/Pt heterostructures

Authors: V. Laukhin, X. Marti, V. Skumryev, D. Hrabovsky, F. Sanchez, M. V. Garcia-Cuenca, C. Ferrater, M. Varela, U. Luders, J. F. Bobo, J. Fontcuberta

Abstract: We report on the exchange bias between antiferromagnetic and ferroelectric hexagonal YMnO3 epitaxial thin films sandwiched between a metallic electrode (Pt) and a soft ferromagnetic layer (Py). Anisotropic magnetoresistance measurements are performed to monitor the presence of an exchange bias field. When the heteroestructure is biased by an electric field, it turns out that the exchange bias fi… ▽ More We report on the exchange bias between antiferromagnetic and ferroelectric hexagonal YMnO3 epitaxial thin films sandwiched between a metallic electrode (Pt) and a soft ferromagnetic layer (Py). Anisotropic magnetoresistance measurements are performed to monitor the presence of an exchange bias field. When the heteroestructure is biased by an electric field, it turns out that the exchange bias field is suppressed. We discuss the dependence of the observed effect on the amplitude and polarity of the electric field. Particular attention is devoted to the role of current leakage across the ferroelectric layer. △ Less

Submitted 16 January, 2007; originally announced January 2007.

Comments: Accepted for publication in Philosophical Magazine Letters (Special issue on multiferroics)

Structural and magnetic properties of ZnO:TM (TM: Co,Mn) nanopowders

Authors: D. Rubi, A. Calleja, J. Arbiol, X. G. Capdevila, M. Segarra, Ll. Aragones, J. Fontcuberta

Abstract: We report on the structural and magnetic characterization of Co0.1Zn0.9O and Mn0.1Zn0.9O nanopowders obtained by a soft chemistry route. We show that those samples fired at low temperatures display a ferromagnetic interaction that can not be attributed to the presence of impurities. A magnetic aging mechanism is observed, reflecting the key role played by defects in the stabilization of ferromag… ▽ More We report on the structural and magnetic characterization of Co0.1Zn0.9O and Mn0.1Zn0.9O nanopowders obtained by a soft chemistry route. We show that those samples fired at low temperatures display a ferromagnetic interaction that can not be attributed to the presence of impurities. A magnetic aging mechanism is observed, reflecting the key role played by defects in the stabilization of ferromagnetism in this kind of diluted magnetic semiconductors. △ Less

Submitted 1 August, 2006; originally announced August 2006.

Comments: Presented at JEMS-06. Submitted to JMMM

Electric field control of exchange bias in multiferroic epitaxial heterostructures

Authors: V. Laukhin, V. Skumryev, X. Marti, D. Hrabovsky, F. Sanchez, M. V. Garcia-Cuenca, C. Ferrater, M. Varela, U. Luders, J. F. Bobo, J. Fontcuberta

Abstract: The magnetic exchange bias between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the ferromagnetic layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an appropriate electric field allows modifying a… ▽ More The magnetic exchange bias between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the ferromagnetic layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an appropriate electric field allows modifying and controlling the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to pave the way towards a new generation of electric-field controlled spintronics devices. △ Less

Submitted 14 July, 2006; originally announced July 2006.

Comments: 15 pages, 5 figures, submitted

Journal ref: Physical Review Letters 97, 227201 (2006)

Exchange biasing and electric polarization with YMnO3

Authors: X. Marti, F. Sanchez, D. Hrabovsky, L. Fabrega, A. Ruyter, J. Fontcuberta, V. Laukhin, V. Skumryev, M. V. Garcia-Cuenca, C. Ferrater, M. Varela, A. Vila, U. Luders, J. F. Bobo

Abstract: We report on the growth and functional characterization of epitaxial thin films of the multiferroic YMnO3. We show that using Pt as a seed layer on SrTiO3(111) substrates, epitaxial YMnO3 films (0001) textured are obtained. An atomic force microscope has been used to polarize electric domains revealing the ferroelectric nature of the film. When a Permalloy layer is grown on top of the YMnO3(0001… ▽ More We report on the growth and functional characterization of epitaxial thin films of the multiferroic YMnO3. We show that using Pt as a seed layer on SrTiO3(111) substrates, epitaxial YMnO3 films (0001) textured are obtained. An atomic force microscope has been used to polarize electric domains revealing the ferroelectric nature of the film. When a Permalloy layer is grown on top of the YMnO3(0001) film, clear indications of exchange bias and enhanced coercivity are observed at low temperature. The observation of coexisting antiferromagnetism and electrical polarization suggests that the biferroic character of YMnO3 can be exploited in novel devices. △ Less

Submitted 14 July, 2006; originally announced July 2006.

Comments: 15 pages, 4 figures, Applied Physics Letters (in press)

Journal ref: Applied Physics Letters 89, 032510 (2006)

Multiferroic tunnel junctions

Authors: Martin Gajek, Manuel Bibes, Stephane Fusil, Karim Bouzehouane, Josep Fontcuberta, Agnes Barthelemy, Albert Fert

Abstract: Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in electric polarization and magnetization to obtain four different logic states. However, schemes allowing a simple electrical readout of these different state… ▽ More Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in electric polarization and magnetization to obtain four different logic states. However, schemes allowing a simple electrical readout of these different states have not been demonstrated so far. In this article, we show that this can be achieved if a multiferroic material is used as the tunnel barrier in a magnetic tunnel junction. We demonstrate that thin films of ferromagnetic-ferroelectric La0.1Bi0.9MnO3 (LBMO) retain both ferroic properties down to a thickness of only 2 nm. We have used such films as spin-filtering tunnel barriers the magnetization and electric polarization of which can be switched independently. In that case, the tunnel current across the structure is controlled by both the magnetic and ferroelectric configuration of the barrier, which gives rise to four distinct resistance states. This can be explained by the combination of spin filtering by the ferromagnetic LBMO barrier and the partial charge screening of electrical charges at the barrier/electrode interfaces due to ferroelectricity. We anticipate our results to be a starting point for more studies on the interplay between ferroelectricity and spin-dependent tunneling, and for the use of nanometric multiferroic elements in prototype devices. On a wider perspective, they may open the way towards novel reconfigurable logic spintronics architectures and to electrically controlled readout in quantum computing schemes using the spin-filter effect. △ Less

Submitted 16 June, 2006; originally announced June 2006.