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Spectral Complexity of Directed Graphs and Application to Structural Decomposition
Authors:
Igor Mezić,
Vladimir A. Fonoberov,
Maria Fonoberova,
Tuhin Sahai
Abstract:
We introduce a new measure of complexity (called spectral complexity) for directed graphs. We start with splitting of the directed graph into its recurrent and non-recurrent parts. We define the spectral complexity metric in terms of the spectrum of the recurrence matrix (associated with the reccurent part of the graph) and the Wasserstein distance. We show that the total complexity of the graph c…
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We introduce a new measure of complexity (called spectral complexity) for directed graphs. We start with splitting of the directed graph into its recurrent and non-recurrent parts. We define the spectral complexity metric in terms of the spectrum of the recurrence matrix (associated with the reccurent part of the graph) and the Wasserstein distance. We show that the total complexity of the graph can then be defined in terms of the spectral complexity, complexities of individual components and edge weights. The essential property of the spectral complexity metric is that it accounts for directed cycles in the graph. In engineered and software systems, such cycles give rise to sub-system interdependencies and increase risk for unintended consequences through positive feedback loops, instabilities, and infinite execution loops in software. In addition, we present a structural decomposition technique that identifies such cycles using a spectral technique. We show that this decomposition complements the well-known spectral decomposition analysis based on the Fiedler vector. We provide several examples of computation of spectral and total complexities, including the demonstration that the complexity increases monotonically with the average degree of a random graph. We also provide an example of spectral complexity computation for the architecture of a realistic fixed wing aircraft system.
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Submitted 31 October, 2018; v1 submitted 17 August, 2018;
originally announced August 2018.
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Scalable Approach to Uncertainty Quantification and Robust Design of Interconnected Dynamical Systems
Authors:
Andrzej Banaszuk,
Vladimir A. Fonoberov,
Thomas A. Frewen,
Marin Kobilarov,
George Mathew,
Igor Mezic,
Alessandro Pinto,
Tuhin Sahai,
Harshad Sane,
Alberto Speranzon,
Amit Surana
Abstract:
Development of robust dynamical systems and networks such as autonomous aircraft systems capable of accomplishing complex missions faces challenges due to the dynamically evolving uncertainties coming from model uncertainties, necessity to operate in a hostile cluttered urban environment, and the distributed and dynamic nature of the communication and computation resources. Model-based robust desi…
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Development of robust dynamical systems and networks such as autonomous aircraft systems capable of accomplishing complex missions faces challenges due to the dynamically evolving uncertainties coming from model uncertainties, necessity to operate in a hostile cluttered urban environment, and the distributed and dynamic nature of the communication and computation resources. Model-based robust design is difficult because of the complexity of the hybrid dynamic models including continuous vehicle dynamics, the discrete models of computations and communications, and the size of the problem. We will overview recent advances in methodology and tools to model, analyze, and design robust autonomous aerospace systems operating in uncertain environment, with stress on efficient uncertainty quantification and robust design using the case studies of the mission including model-based target tracking and search, and trajectory planning in uncertain urban environment. To show that the methodology is generally applicable to uncertain dynamical systems, we will also show examples of application of the new methods to efficient uncertainty quantification of energy usage in buildings, and stability assessment of interconnected power networks.
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Submitted 3 March, 2011;
originally announced March 2011.
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Photoluminescence of tetrahedral quantum-dot quantum wells
Authors:
V. A. Fonoberov,
E. P. Pokatilov,
V. M. Fomin,
J. T. Devreese
Abstract:
Taking into account the tetrahedral shape of a quantum dot quantum well (QDQW) when describing excitonic states, phonon modes and the exciton-phonon interaction in the structure, we obtain within a non-adiabatic approach a quantitative interpretation of the photoluminescence (PL) spectrum of a single CdS/HgS/CdS QDQW. We find that the exciton ground state in a tetrahedral QDQW is bright, in cont…
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Taking into account the tetrahedral shape of a quantum dot quantum well (QDQW) when describing excitonic states, phonon modes and the exciton-phonon interaction in the structure, we obtain within a non-adiabatic approach a quantitative interpretation of the photoluminescence (PL) spectrum of a single CdS/HgS/CdS QDQW. We find that the exciton ground state in a tetrahedral QDQW is bright, in contrast to the dark ground state for a spherical QDQW.
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Submitted 2 February, 2006;
originally announced February 2006.
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Polar optical phonons in wurtzite spheroidal quantum dots: Theory and application to ZnO and ZnO/MgZnO nanostructures
Authors:
Vladimir A. Fonoberov,
Alexander A. Balandin
Abstract:
Polar optical-phonon modes are derived analytically for spheroidal quantum dots with wurtzite crystal structure. The developed theory is applied to a freestanding spheroidal ZnO quantum dot and to a spheroidal ZnO quantum dot embedded into a MgZnO crystal. The wurtzite (anisotropic) quantum dots are shown to have strongly different polar optical-phonon modes in comparison with zincblende (isotro…
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Polar optical-phonon modes are derived analytically for spheroidal quantum dots with wurtzite crystal structure. The developed theory is applied to a freestanding spheroidal ZnO quantum dot and to a spheroidal ZnO quantum dot embedded into a MgZnO crystal. The wurtzite (anisotropic) quantum dots are shown to have strongly different polar optical-phonon modes in comparison with zincblende (isotropic) quantum dots. The obtained results allow one to explain and accurately predict phonon peaks in the Raman spectra of wurtzite nanocrystals, nanorods (prolate spheroids), and epitaxial quantum dots (oblate spheroids).
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Submitted 29 November, 2004;
originally announced November 2004.
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Interfacial and Confined Optical Phonons in Wurtzite Nanocrystals
Authors:
Vladimir A. Fonoberov,
Alexander A. Balandin
Abstract:
We derive within the dielectric-continuum model an integral equation that defines interface and confined polar optical-phonon modes in nanocrystals with wurtzite crystal structure. It is demonstrated theoretically, that while the frequency of confined polar optical phonons in zincblende nanocrystals is equal to that of the bulk crystal phonons, the confined polar optical phonons in wurtzite nano…
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We derive within the dielectric-continuum model an integral equation that defines interface and confined polar optical-phonon modes in nanocrystals with wurtzite crystal structure. It is demonstrated theoretically, that while the frequency of confined polar optical phonons in zincblende nanocrystals is equal to that of the bulk crystal phonons, the confined polar optical phonons in wurtzite nanocrystals have a discrete spectrum of frequencies different from those of the bulk crystal. The calculated frequencies of confined polar optical phonons in wurtzite ZnO nanocrystals are found to be in an excellent agreement with the experimental resonant Raman scattering spectra of spherical ZnO quantum dots.
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Submitted 28 May, 2004;
originally announced May 2004.
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Photoluminescence of tetrahedral quantum-dot quantum wells
Authors:
V. A. Fonoberov,
E. P. Pokatilov,
V. M. Fomin,
J. T. Devreese
Abstract:
Taking into account the tetrahedral shape of a quantum dot quantum well (QDQW) when describing excitonic states, phonon modes and the exciton-phonon interaction in the structure, we obtain within a non-adiabatic approach a quantitative interpretation of the photoluminescence spectrum of a single CdS/HgS/CdS QDQW. We find that the exciton ground state in a tetrahedral QDQW is bright, in contrast…
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Taking into account the tetrahedral shape of a quantum dot quantum well (QDQW) when describing excitonic states, phonon modes and the exciton-phonon interaction in the structure, we obtain within a non-adiabatic approach a quantitative interpretation of the photoluminescence spectrum of a single CdS/HgS/CdS QDQW. We find that the exciton ground state in a tetrahedral QDQW is bright, in contrast to the dark ground state for a spherical QDQW. The position of the phonon peaks in the photoluminescence spectrum is attributed to interface optical phonons. We also show that the experimental value of the Huang-Rhys parameter can be obtained only within the nonadiabatic theory of phonon-assisted transitions.
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Submitted 30 January, 2004;
originally announced January 2004.
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Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots
Authors:
Vladimir A. Fonoberov,
Alexander A. Balandin
Abstract:
We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conduction and valence band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it h…
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We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conduction and valence band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it has a smaller effect on WZ GaN/AlGaN, and very little effect on ZB GaN/AlN quantum dots. As a result, the exciton ground state energy in WZ GaN/AlN quantum dots, with heights larger than 3 nm, exhibits a red shift with respect to the bulk WZ GaN energy gap. The radiative decay time of the red-shifted transitions is large and increases almost exponentially from 6.6 ns for quantum dots with height 3 nm to 1100 ns for the quantum dots with height 4.5 nm. In WZ GaN/AlGaN quantum dots, both the radiative decay time and its increase with quantum dot height are smaller than those in WZ GaN/AlN quantum dots. On the other hand, the radiative decay time in ZB GaN/AlN quantum dots is of the order of 0.3 ns, and is almost independent of the quantum dot height. Our results are in good agreement with available experimental data and can be used to optimize GaN quantum dot parameters for proposed optoelectronic applications.
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Submitted 15 October, 2003;
originally announced October 2003.
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Electron and hole states in quantum-dot quantum wells within a spherical 8-band model
Authors:
E. P. Pokatilov,
V. A. Fonoberov,
V. M. Fomin,
J. T. Devreese
Abstract:
In order to study heterostructures composed both of materials with strongly different parameters and of materials with narrow band gaps, we have developed an approach, which combines the spherical 8-band effective-mass Hamiltonian and the Burt's envelope function representation. Using this method, electron and hole states are calculated in CdS/HgS/CdS/H_2O and CdTe/HgTe/CdTe/H_2O quantum-dot qua…
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In order to study heterostructures composed both of materials with strongly different parameters and of materials with narrow band gaps, we have developed an approach, which combines the spherical 8-band effective-mass Hamiltonian and the Burt's envelope function representation. Using this method, electron and hole states are calculated in CdS/HgS/CdS/H_2O and CdTe/HgTe/CdTe/H_2O quantum-dot quantum-well heterostructures. Radial components of the wave functions of the lowest S and P electron and hole states in typical quantum-dot quantum wells (QDQWs) are presented as a function of radius. The 6-band-hole components of the radial wave functions of an electron in the 8-band model have amplitudes comparable with the amplitude of the corresponding 2-band-electron component. This is a consequence of the coupling between the conduction and valence bands, which gives a strong nonparabolicity of the conduction band. At the same time, the 2-band-electron component of the radial wave functions of a hole in the 8-band model is small compared with the amplitudes of the corresponding 6-band-hole components. It is shown that in the CdS/HgS/CdS/H_2O QDQW holes in the lowest states are strongly localized in the well region (HgS). On the contrary, electrons in this QDQW and both electron and holes in the CdTe/HgTe/CdTe/H_2O QDQW are distributed through the entire dot. The importance of the developed theory for QDQWs is proven by the fact that in contrast to our rigorous 8-band model, there appear spurious states within the commonly used symmetrized 8-band model.
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Submitted 14 September, 2001;
originally announced September 2001.
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Development of an eight-band theory for quantum-dot heterostructures
Authors:
E. P. Pokatilov,
V. A. Fonoberov,
V. M. Fomin,
J. T. Devreese
Abstract:
We derive a nonsymmetrized 8-band effective-mass Hamiltonian for quantum-dot heterostructures (QDHs) in Burt's envelope-function representation. The 8x8 radial Hamiltonian and the boundary conditions for the Schroedinger equation are obtained for spherical QDHs. Boundary conditions for symmetrized and nonsymmetrized radial Hamiltonians are compared with each other and with connection rules that…
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We derive a nonsymmetrized 8-band effective-mass Hamiltonian for quantum-dot heterostructures (QDHs) in Burt's envelope-function representation. The 8x8 radial Hamiltonian and the boundary conditions for the Schroedinger equation are obtained for spherical QDHs. Boundary conditions for symmetrized and nonsymmetrized radial Hamiltonians are compared with each other and with connection rules that are commonly used to match the wave functions found from the bulk kp Hamiltonians of two adjacent materials. Electron and hole energy spectra in three spherical QDHs: HgS/CdS, InAs/GaAs, and GaAs/AlAs are calculated as a function of the quantum dot radius within the approximate symmetrized and exact nonsymmetrized 8x8 models. The parameters of dissymmetry are shown to influence the energy levels and the wave functions of an electron and a hole and, consequently, the energies of both intraband and interband transitions.
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Submitted 14 September, 2001;
originally announced September 2001.
