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Evidence of Josephson junction behavior in top-gated LaAlO$_3$-SrTiO$_3$
Authors:
Varada V Bal,
Manan M Mehta,
Sangwoo Ryu,
Hyungwoo Lee,
Chad M Folkman,
Chang-Beom Eom,
Venkat Chandrasekhar
Abstract:
We demonstrate top-gate tunable Josephson junction like behavior in the two dimensional electron gas at the LaAlO$_3$-SrTiO$_3$ interface. A combination of global back-gating and local top-gating is used to define the junctions, providing an efficient way for much finer spatial control over the properties of the interface, as compared to back-gating alone. The variation of critical currents and ze…
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We demonstrate top-gate tunable Josephson junction like behavior in the two dimensional electron gas at the LaAlO$_3$-SrTiO$_3$ interface. A combination of global back-gating and local top-gating is used to define the junctions, providing an efficient way for much finer spatial control over the properties of the interface, as compared to back-gating alone. The variation of critical currents and zero bias resistances with temperature shows that the junctions behave like short, overdamped weak links. This technique could be an important tool to illuminate the nature of superconductivity in the LaAlO$_3$-SrTiO$_3$ interface system.
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Submitted 22 July, 2014;
originally announced July 2014.
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Magnetic field tuned superconductor-to-insulator transition at the LaAlO$_3$ /SrTiO$_3$ interface
Authors:
M. M. Mehta,
D. A. Dikin,
C. W. Bark,
S. Ryu,
C. M. Folkman,
C. B. Eom,
V. Chandrasekhar
Abstract:
We present a study of the magnetic field tuned superconductor-to-insulator transition (SIT) in the electron gas that forms at the LaAlO$_3$/SrTiO$_3$ interface. We find that the magnetic field induces a transition into a weakly insulating state, as is observed for the electrostatically tuned SIT at this interface. Finite size scaling of the magnetoresistance yields the critical exponent product…
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We present a study of the magnetic field tuned superconductor-to-insulator transition (SIT) in the electron gas that forms at the LaAlO$_3$/SrTiO$_3$ interface. We find that the magnetic field induces a transition into a weakly insulating state, as is observed for the electrostatically tuned SIT at this interface. Finite size scaling of the magnetoresistance yields the critical exponent product $zν\simeq$ 7/3, indicating that the transition is governed by quantum percolation effects. While such critical exponents have been reported previously for high resistance films, they have not been reported for a low resistance system like ours, with a maximum sheet resistance of $\approx$ 1.5 k$Ω$, much less than the quantum of resistance $R_Q \equiv h/4e^2 = 6.45$ k$Ω$.
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Submitted 13 September, 2013;
originally announced September 2013.
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Reversible redox reactions in an epitaxially stabilized SrCoOx oxygen sponge
Authors:
Hyoungjeen Jeen,
Woo Seok Choi,
Michael D. Biegalski,
Chad M. Folkman,
I-Cheng Tung,
Dillon D. Fong,
John W. Freeland,
Dongwon Shin,
Hiromichi Ohta,
Matthew F. Chisholm,
Ho Nyung Lee
Abstract:
Fast, reversible redox reactions in solids at low temperatures without thermomechanical degradation are a promising strategy for enhancing the overall performance and lifetime of many energy materials and devices. However, the robust nature of the cation's oxidation state and the high thermodynamic barrier have hindered the realization of fast catalysis and bulk diffusion at low temperatures. Here…
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Fast, reversible redox reactions in solids at low temperatures without thermomechanical degradation are a promising strategy for enhancing the overall performance and lifetime of many energy materials and devices. However, the robust nature of the cation's oxidation state and the high thermodynamic barrier have hindered the realization of fast catalysis and bulk diffusion at low temperatures. Here, we report a significant lowering of the redox temperature by epitaxial stabilization of strontium cobaltites (SrCoOx) grown directly as one of two distinct crystalline phases, either the perovskite SrCoO3-δ or the brownmillerite SrCoO2.5. Importantly, these two phases can be reversibly switched at a remarkably reduced temperature (200~300 °C) in a considerably short time (< 1 min) without destroying the parent framework. The fast, low temperature redox activity in SrCoO3-δ is attributed to a small Gibbs free energy difference between two topotatic phases. Our findings thus provide useful information for develo** highly sensitive electrochemical sensors and low temperature cathode materials.
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Submitted 26 August, 2013;
originally announced August 2013.
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Artificially engineered superlattices of pnictide superconductor
Authors:
S. Lee,
C. Tarantini,
P. Gao,
J. Jiang,
J. D. Weiss,
F. Kametani,
C. M. Folkman,
Y. Zhang,
X. Q. Pan,
E. E. Hellstrom,
D. C. Larbalestier,
C. B. Eom
Abstract:
Significant progress has been achieved in fabricating high quality bulk and thinfilm iron-based superconductors. In particular, artificial layered pnictide superlattices offer the possibility of tailoring the superconducting properties and understanding the mechanism of the superconductivity itself. For high field applications, large critical current densities (Jc) and irreversibility fields (Hirr…
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Significant progress has been achieved in fabricating high quality bulk and thinfilm iron-based superconductors. In particular, artificial layered pnictide superlattices offer the possibility of tailoring the superconducting properties and understanding the mechanism of the superconductivity itself. For high field applications, large critical current densities (Jc) and irreversibility fields (Hirr) are indispensable along all crystal directions. On the other hand, the development of superconducting devices such as tunnel junctions requires multilayered heterostructures. Here we show that artificially engineered undoped Ba-122 / Co doped Ba-122 compositionally modulated superlattices produce ab-aligned nanoparticle arrays. These layer and self-assemble along c-axis aligned defects, and combine to produce very large Jc and Hirr enhancements over a wide angular range. We also demonstrate a structurally modulated SrTiO3 (STO) / Co doped Ba-122 superlattice with sharp interfaces. Success in superlattice fabrication involving pnictides will aid the progress of heterostructured systems exhibiting novel interfacial phenomena and device applications.
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Submitted 12 July, 2013;
originally announced July 2013.
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Artificial and self-assembled pinning centers in Ba(Fe1-xCox)2As2 thin films as a route to very high current density
Authors:
C. Tarantini,
S. Lee,
F. Kametani,
J. Jiang,
J. D. Weiss,
J. Jaroszynski,
C. M. Folkman,
E. E. Hellstrom,
C. B. Eom,
D. C. Larbalestier
Abstract:
We report on the superior vortex pinning of single and multilayer Ba(Fe1-xCox)2As2 thin films with self-assembled c-axis and artificially introduced ab-plane pins. Ba(Fe1-xCox)2As2 can accept a very high density of pins (15-20 vol%) without Tc suppression. The matching field is greater than 12 T, producing a significant enhancement of the critical current density Jc, an almost isotropic Jc (Theta,…
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We report on the superior vortex pinning of single and multilayer Ba(Fe1-xCox)2As2 thin films with self-assembled c-axis and artificially introduced ab-plane pins. Ba(Fe1-xCox)2As2 can accept a very high density of pins (15-20 vol%) without Tc suppression. The matching field is greater than 12 T, producing a significant enhancement of the critical current density Jc, an almost isotropic Jc (Theta,20T) > 10^5 A/cm2, and global pinning force density Fp of about 50 GN/m^3. This scenario strongly differs from the high temperature cuprates where the addition of pins without Tc suppression is limited to 2-4 vol%, leading to small HIrr enhancements and improved Jc only below 3-5 Tesla.
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Submitted 27 November, 2012;
originally announced November 2012.
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Evidence for charge-vortex duality at the LaAlO$_3$/SrTiO$_3$ interface
Authors:
Manan Mehta,
D. A. Dikin,
C. W. Bark,
S. Ryu,
C. M. Folkman,
C. B. Eom,
V. Chandrasekhar
Abstract:
The concept of duality has proved extremely powerful in extending our understanding in many areas of physics (1, 2). Charge-vortex duality has been proposed (3, 4) as a model to understand the superconductor to insulator transition (SIT) in disordered thin films (5, 6) and Josephson junction arrays (7, 8, 9). In this model, on the superconducting side, one has delocalized Cooper pairs but localize…
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The concept of duality has proved extremely powerful in extending our understanding in many areas of physics (1, 2). Charge-vortex duality has been proposed (3, 4) as a model to understand the superconductor to insulator transition (SIT) in disordered thin films (5, 6) and Josephson junction arrays (7, 8, 9). In this model, on the superconducting side, one has delocalized Cooper pairs but localized vortices; while on the insulating side, one has localized Cooper pairs but mobile vortices. Here we show a new experimental manifestation of this duality in the electron gas that forms at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) (10, 11, 12, 13, 14). The effect is due to the motion of vortices generated by the magnetization dynamics of the ferromagnet that also forms at the same interface (14, 15, 16), which results in an increase in resistance on the superconducting side of the transition, but an increase in conductance on the insulating side.
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Submitted 30 July, 2012;
originally announced July 2012.
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Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects
Authors:
Daesu Lee,
S. H. Baek,
T. H. Kim,
J. -G. Yoon,
C. M. Folkman,
C. B. Eom,
T. W. Noh
Abstract:
We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly, an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroel…
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We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly, an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system is characterized with a rectangular polarization hysteresis loop, with which we confirmed that the diode polarity switching occurred at the ferroelectric coercive voltage. Moreover, we observed a simultaneous switching of the diode polarity and the associated photovoltaic response dependent on the ferroelectric domain configurations. Our detailed study suggests that the polarization charge can affect the Schottky barrier at the ferroelectric/metal interfaces, resulting in a modulation of the interfacial carrier injection. The amount of polarization-modulated carrier injection can affect the transition voltage value at which a space-charge-limited bulk current-voltage (J-V) behavior is changed from Ohmic (i.e., J ~ V) to nonlinear (i.e., J ~ V^n with n \geq 2). This combination of bulk conduction and polarization-modulated carrier injection explains the detailed physical mechanism underlying the switchable diode effect in ferroelectric capacitors.
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Submitted 16 August, 2011;
originally announced August 2011.
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Coexistence of superconductivity and ferromagnetism in two dimensions
Authors:
D. A. Dikin,
M. Mehta,
C. W. Bark,
C. M. Folkman,
C. B. Eom,
V. Chandrasekhar
Abstract:
Ferromagnetism is usually considered to be incompatible with conventional superconductivity, as it destroys the singlet correlations responsible for the pairing interaction. Superconductivity and ferromagnetism are known to coexist in only a few bulk rare-earth materials. Here we report evidence for their coexistence in a two-dimensional system: the interface between two bulk insulators, LaAlO…
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Ferromagnetism is usually considered to be incompatible with conventional superconductivity, as it destroys the singlet correlations responsible for the pairing interaction. Superconductivity and ferromagnetism are known to coexist in only a few bulk rare-earth materials. Here we report evidence for their coexistence in a two-dimensional system: the interface between two bulk insulators, LaAlO$_3$ (LAO) and SrTiO$_3$ (STO), a system that has been studied intensively recently. Magnetoresistance, Hall and electric-field dependence measurements suggest that there are two distinct bands of charge carriers that contribute to the interface conductivity. The sensitivity of properties of the interface to an electric field make this a fascinating system for the study of the interplay between superconductivity and magnetism.
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Submitted 10 June, 2011; v1 submitted 21 March, 2011;
originally announced March 2011.
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Nature of polarization fatigue in BiFeO3
Authors:
Seung-Hyub Baek,
Chad M. Folkman,
Jae-Wan Park,
Sanghan Lee,
Chung-Wung Bark,
Thomas Tybell,
Chang-Beom Eom
Abstract:
As a room-temperature multiferroic, BiFeO3 has been intensively investigated for both magnetoelectric devices and non-volatile ferroelectric memory applications. Both magnetoelectric and ferroelectric memory devices have the same control knob: polarization switching by an applied electric field. Due to the rhombohedral symmetry of BiFeO3, there are four ferroelastic variances and three different p…
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As a room-temperature multiferroic, BiFeO3 has been intensively investigated for both magnetoelectric devices and non-volatile ferroelectric memory applications. Both magnetoelectric and ferroelectric memory devices have the same control knob: polarization switching by an applied electric field. Due to the rhombohedral symmetry of BiFeO3, there are four ferroelastic variances and three different polarization switching events: (1) 71° switching from r1- to r3+, (2) 109° switching from r1- to r2+ (or r4+), and (3) 180o switching from r1- to r1+ (the superscript + and - stand for up and down polarization, respectively). Each switching path is coupled to a different reorientation of the BiFeO3 unit cell, and hence different coupling to the magnetic order as well as different magnitudes of switchable polarization. A degradation of the ferroelectric properties of BiFeO3 will result in losing controllability of magnetic order switching in magnetoelectric devices and capacity for information storage in ferroelectric memory devices. Especially, polarization fatigue will directly restrict the reliability of the actual devices. Hence it is important to understand the intrinsic fatigue behavior of each polarization switching path in BiFeO3 thin films. In this communication, we report polarization fatigue in BiFeO3 depending on switching path, and propose a fatigue model which will broaden our understanding of the fatigue phenomenon in low-symmetry materials.
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Submitted 3 January, 2011;
originally announced January 2011.
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Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain
Authors:
C. W. Bark,
D. A. Felker,
Y. Wang,
Y. Zhang,
H. W. Jang,
C. M. Folkman,
J. W. Park,
S. H. Baek,
X. Q. Pan,
E. Y. Tsymbal,
M. S. Rzchowski,
C. B. Eom
Abstract:
Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by ep…
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Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface.
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Submitted 17 November, 2010;
originally announced November 2010.
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Rewritable nanoscale oxide photodetector
Authors:
Patrick Irvin,
Yanjun Ma,
Daniela F. Bogorin,
Cheng Cen,
Chung Wung Bark,
Chad M. Folkman,
Chang-Beom Eom,
Jeremy Levy
Abstract:
Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of t…
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Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of the most challenging aspects of device development. Here we report the development of rewritable nanoscale photodetectors created at the interface between LaAlO3 and SrTiO3. Nanowire junctions with characteristic dimensions 2-3 nm are created using a reversible AFM writing technique. These nanoscale devices exhibit a remarkably high gain for their size, in part because of the large electric fields produced in the gap region. The photoconductive response is gate-tunable and spans the visible-to-near-infrared regime. The ability to integrate rewritable nanoscale photodetectors with nanowires and transistors in a single materials platform foreshadows new families of integrated optoelectronic devices and applications.
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Submitted 14 September, 2010;
originally announced September 2010.
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Cooper Pair Writing at the LaAlO3/SrTiO3 Interface
Authors:
Cheng Cen,
Daniela F. Bogorin,
Chung Wung Bark,
Chad M. Folkman,
Chang-Beom Eom,
Jeremy Levy
Abstract:
The LaAlO3/SrTiO3 interface provides a unique platform for controlling the electronic properties of the superconducting semiconductor SrTiO3. Prior investigations have shown that two-dimensional superconductivity can be produced at the LaAlO3/SrTiO3 interface and tuned electrostatically. The recently demonstrated reversible control of the metal-insulator transition at the same interface using cond…
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The LaAlO3/SrTiO3 interface provides a unique platform for controlling the electronic properties of the superconducting semiconductor SrTiO3. Prior investigations have shown that two-dimensional superconductivity can be produced at the LaAlO3/SrTiO3 interface and tuned electrostatically. The recently demonstrated reversible control of the metal-insulator transition at the same interface using conductive atomic force microscopy (c-AFM) raises the question of whether this room-temperature technique can produce structures that exhibit superconducting, normal metallic and insulating phases at sub-Kelvin temperatures. Here we report low-temperature magnetotransport experiments on conducting structures defined at an otherwise insulating LaAlO3/SrTiO3 interface. A quantum phase transition associated with the formation of Cooper pairs is observed in these predefined structures at sub-Kelvin temperatures. However, a finite resistance remains even at the lowest temperature. At higher magnetic fields, interfaces with high mobility also exhibit strong Shubnikov-de Haas oscillations as well as a larger Ginsburg-Landau coherence length. Cooper pair localization, spin-orbit coupling, and finite-size effects may factor into an explanation for some of the unusual properties observed.
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Submitted 5 February, 2011; v1 submitted 13 September, 2010;
originally announced September 2010.
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Strong vortex pinning in Co-doped BaFe2As2 single crystal thin films
Authors:
C. Tarantini,
S. Lee,
Y. Zhang,
J. Jiang,
C. W. Bark,
J. D. Weiss,
A. Polyanskii,
C. T. Nelson,
H. W. Jang,
C. M. Folkman,
S. H. Baek,
X. Q. Pan,
A. Gurevich,
E. E. Hellstrom,
C. B. Eom,
D. C. Larbalestier
Abstract:
We report measurements of the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2As2 thin films grown on SrTiO3/(La,Sr)(Al,Ta)O3 with different SrTiO3 template thicknesses. The films show Jc comparable to Jc of single crystals and a maximum pinning force Fp(0.6Tc) > 5 GN/m3 at H/Hirr ~ 0.5 indicative of strong vortex pinning effective up to high fields. Due to the strong correl…
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We report measurements of the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2As2 thin films grown on SrTiO3/(La,Sr)(Al,Ta)O3 with different SrTiO3 template thicknesses. The films show Jc comparable to Jc of single crystals and a maximum pinning force Fp(0.6Tc) > 5 GN/m3 at H/Hirr ~ 0.5 indicative of strong vortex pinning effective up to high fields. Due to the strong correlated c-axis pinning, Jc for field along the c-axis exceeds Jc for H//ab plane, inverting the expectation of the Hc2 anisotropy. HRTEM reveals that the strong vortex pinning is due to a high density of nanosize columnar defects.
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Submitted 27 February, 2010;
originally announced March 2010.
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Nanoscale rectification at the LaAlO3/SrTiO3 interface
Authors:
Daniela F. Bogorin,
Chung Wung Bark,
Ho Won Jang,
Cheng Cen,
Chad M. Folkman,
Chang-Beom Eom,
Jeremy Levy
Abstract:
Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical…
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Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures with engineered structural inversion asymmetry. Nanostructures produced in this manner may be useful for electro-optic applications or in spintronic devices.
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Submitted 10 June, 2010; v1 submitted 18 December, 2009;
originally announced December 2009.
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Template engineering of Co-doped BaFe2As2 single-crystal thin films
Authors:
S. Lee,
J. Jiang,
C. T. Nelson,
C. W. Bark,
J. D. Weiss,
C. Tarantini,
H. W. Jang,
C. M. Folkman,
S. H. Baek,
A. Polyanskii,
D. Abraimov,
A. Yamamoto,
Y. Zhang,
X. Q. Pan,
E. E. Hellstrom,
D. C. Larbalestier,
C. B. Eom
Abstract:
Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties of ferropnictide thin films appear compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report novel template…
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Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties of ferropnictide thin films appear compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report novel template engineering using single-crystal intermediate layers of (001) SrTiO3 and BaTiO3 grown on various perovskite substrates that enables genuine epitaxial films of Co-doped BaFe2As2 with high transition temperature (zero resistivity Tc of 21.5K), small transition widths (delta Tc = 1.3K), superior Jc of 4.5 MA/cm2 (4.2K, self field) and strong c-axis flux pinning. Implementing SrTiO3 or BaTiO3 templates to match the alkaline earth layer in the Ba-122 with the alkaline earth-oxygen layer in the templates opens new avenues for epitaxial growth of ferropnictides on multi-functional single crystal substrates. Beyond superconductors, it provides a framework for growing heteroepitaxial intermetallic compounds on various substrates by matching interfacial layers between templates and thin film overlayers.
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Submitted 1 October, 2009;
originally announced October 2009.
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Weak-link behavior of grain boundaries in superconducting Ba(Fe1-xCox)2As2 bicrystals
Authors:
S. Lee,
J. Jiang,
J. D. Weiss,
C. M. Folkman,
C. W. Bark,
C. Tarantini,
A. Xu,
D. Abraimov,
A. Polyanskii,
C. T. Nelson,
Y. Zhang,
S. H. Baek,
H. W. Jang,
A. Yamamoto,
F. Kametani,
X. Q. Pan,
E. E. Hellstrom,
A. Gurevich,
C. B. Eom,
D. C. Larbalestier
Abstract:
We show that despite the low anisotropy, strong vortex pinning and high irreversibility field Hirr close to the upper critical field Hc2 of Ba(Fe1-xCox)2As2, the critical current density Jgb across [001] tilt grain boundaries (GBs) of thin film Ba(Fe1-xCox)2As2 bicrystals is strongly depressed, similar to high-Tc cuprates. Our results suggest that weak-linked GBs are characteristic of both cupra…
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We show that despite the low anisotropy, strong vortex pinning and high irreversibility field Hirr close to the upper critical field Hc2 of Ba(Fe1-xCox)2As2, the critical current density Jgb across [001] tilt grain boundaries (GBs) of thin film Ba(Fe1-xCox)2As2 bicrystals is strongly depressed, similar to high-Tc cuprates. Our results suggest that weak-linked GBs are characteristic of both cuprates and pnictides because of competing orders, low carrier density, and unconventional pairing symmetry.
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Submitted 16 November, 2009; v1 submitted 21 July, 2009;
originally announced July 2009.
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Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale
Authors:
A. Gruverman,
D. Wu,
H. Lu,
Y. Wang,
H. W. Jang,
C. M. Folkman,
M. Ye. Zhuravlev,
D. Felker,
M. Rzchowski,
C. -B. Eom,
E. Y. Tsymbal
Abstract:
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect usin…
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Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect using a combination of Piezoresponse Force Microscopy (PFM) and Conducting Atomic Force Microscopy (C-AFM) techniques on nanometer-thick epitaxial BaTiO3 single crystal thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by the direct nanoscale visualization and control of polarization and tunneling current in BaTiO3 films. The obtained results show a change in resistance by about two orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in non-volatile memory and logic devices, not involving charge as a state variable.
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Submitted 8 June, 2009;
originally announced June 2009.