Showing 1–39 of 39 results for author: Folk, J A

Activation of magnetic moments in CVD-grown graphene by annealing

Authors: Hyungki Shin, Ebrahim Sajadi, Ali Khademi, Silvia Lüscher, Joshua A. Folk

Abstract: Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at \SI{300}{\celsius} in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from electron-electron interactions, which would otherwise be expected to dominate dephasing at 4 K and be… ▽ More Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at \SI{300}{\celsius} in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from electron-electron interactions, which would otherwise be expected to dominate dephasing at 4 K and below. This extra dephasing is apparently induced by local magnetic moments activated by the annealing process, and depends strongly on the backgate voltage applied. △ Less

Submitted 8 October, 2021; v1 submitted 6 July, 2021; originally announced July 2021.

Weak localization measurements of electronic scattering rates in Li-doped epitaxial graphene

Authors: Ali Khademi, Kristen Kaasbjerg, Pinder Dosanjh, Alexander Stöhr, Stiven Forti, Ulrich Starke, Joshua A. Folk

Abstract: Early experiments on alkali-doped graphene demonstrated that the dopant adatoms modify the conductivity of graphene significantly, as extra carriers enhance conductivity while Coulomb scattering off the adatoms suppresses it. However, conductivity probes the overall scattering rate, so a dominant channel associated with long-range Coulomb scattering will mask weaker short-range channels. We presen… ▽ More Early experiments on alkali-doped graphene demonstrated that the dopant adatoms modify the conductivity of graphene significantly, as extra carriers enhance conductivity while Coulomb scattering off the adatoms suppresses it. However, conductivity probes the overall scattering rate, so a dominant channel associated with long-range Coulomb scattering will mask weaker short-range channels. We present weak localization measurements of epitaxial graphene with lithium adatoms that separately quantify intra- and intervalley scattering rates, then compare the measurements to tight-binding calculations of expected rates for this system. The intravalley rate is strongly enhanced by Li deposition, consistent with Coulomb scattering off the Li adatoms. A simultaneous enhancement of intervalley scattering is partially explained by extra carriers in the graphene interacting with residual disorder. But differences between measured and calculated rates at high Li coverage may indicate adatom-induced modifications to the band structure that go beyond the applied model. Similar adatom-induced modifications of the graphene bands have recently been observed in ARPES, but a full theoretical understanding of these effects is still in development. △ Less

Submitted 31 October, 2019; v1 submitted 28 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. B 100, 161405 (2019)

Gate-induced superconductivity in a monolayer topological insulator

Authors: Ebrahim Sajadi, Tauno Palomaki, Zaiyao Fei, Wen** Zhao, Philip Bement, Christian Olsen, Silvia Lüscher, Xiaodong Xu, Joshua A. Folk, David H. Cobden

Abstract: The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic do**, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a… ▽ More The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic do**, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a just a small gate voltage. This discovery offers new possibilities for gate-controlled devices combining superconductivity and topology, and could provide a basis for quantum information schemes based on topological protection. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Comments: manuscript only

Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to $Δ_{5/2}$ and Impact of Density Fluctuations

Authors: Qi Qian, James R. Nakamura, Saeed Fallahi, Geoffrey C. Gardner, John D. Watson, Silvia Luscher, Joshua A. Folk, Gabor A. Csathy, Michael J. Manfra

Abstract: We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscilla… ▽ More We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscillations such that the canonical method (cf. Coleridge, Phys. Rev. B \textbf{44}, 3793) for determination of quantum lifetime substantially underestimates $τ_q$ unless density inhomogeneity is explicitly considered; 2) $τ_q$ does not correlate well with quality as measured by $Δ_{5/2}$, the excitation gap of the fractional quantum Hall state at 5/2 filling. △ Less

Submitted 20 April, 2017; originally announced April 2017.

Comments: 12 pages, 4 figures

Journal ref: Phys. Rev. B 96, 035309 (2017)

Electron-Hole Asymmetric Chiral Breakdown of Reentrant Quantum Hall States

Authors: Alexander V. Rossokhaty, Yuval Baum, Joshua A. Folk, John D. Watson, Geoffrey C. Gardner, Michael J. Manfra

Abstract: Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, though their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. A comparison of RIQH breakdown characteristics at multiple voltage probes indi… ▽ More Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, though their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. A comparison of RIQH breakdown characteristics at multiple voltage probes indicates that these signatures can be ascribed to a phase boundary between broken-down and unbroken regions, spreading chirally from source and drain contacts as a function of bias current and passing voltage probes one by one. The chiral sense of the spreading is not set by the chirality of the edge state itself, instead depending on electron- or hole-like character of the RIQH state. △ Less

Submitted 2 October, 2016; originally announced October 2016.

Comments: arXiv admin note: substantial text overlap with arXiv:1512.03110

Alkali do** of graphene: the crucial role of high temperature annealing

Authors: Ali Khademi, Ebrahim Sajadi, Pinder Dosanjh, Doug Bonn, Joshua A. Folk, Alexander Stöhr, Stiven Forti, Ulrich Starke

Abstract: The do** efficiency of lithium deposited at cryogenic temperatures on epitaxial and CVD monolayer graphene has been investigated under ultra-high vacuum conditions. Change of charge carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements, in low and high do** regimes. It was found that pre-annealing the graphene greatly enhanced the maximum levels of dop… ▽ More The do** efficiency of lithium deposited at cryogenic temperatures on epitaxial and CVD monolayer graphene has been investigated under ultra-high vacuum conditions. Change of charge carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements, in low and high do** regimes. It was found that pre-annealing the graphene greatly enhanced the maximum levels of do** that could be achieved: do** saturated at $Δn = 2\times 10^{13}$ e$^-$/cm$^2$ without annealing, independent of sample type or previous processing; after a 900 K anneal, the saturated do** rose one order of magnitude to $Δn = 2\times 10^{14}$ e$^-$/cm$^2$. △ Less

Submitted 2 October, 2016; originally announced October 2016.

Journal ref: Phys. Rev. B 94, 201405 (2016)

Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure

Authors: M. Kjaergaard, F. Nichele, H. J. Suominen, M. P. Nowak, M. Wimmer, A. R. Akhmerov, J. A. Folk, K. Flensberg, J. Shabani, C. J. Palmstrom, C. M. Marcus

Abstract: The prospect of coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting electronics, and new topological states of matter. For instance, one route toward realizing topological matter is by coupling a 2D electron gas (2DEG) with strong s… ▽ More The prospect of coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting electronics, and new topological states of matter. For instance, one route toward realizing topological matter is by coupling a 2D electron gas (2DEG) with strong spin-orbit interaction to an s-wave superconductor. Previous efforts along these lines have been hindered by interface disorder and unstable gating. Here, we report measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al, yielding multilayer devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunneling regime, overcoming the soft-gap problem in 2D superconductor-semiconductor hybrid systems. With the QPC in the open regime, we observe a first conductance plateau at 4e^2/h, as expected theoretically for a normal-QPC-superconductor structure. The realization of a hard-gap semiconductor-superconductor system that is amenable to top-down processing provides a means of fabricating scalable multicomponent hybrid systems for applications in low-dissipation electronics and topological quantum information. △ Less

Submitted 29 November, 2016; v1 submitted 6 March, 2016; originally announced March 2016.

Comments: includes main text, supplementary information and code for simulations. Published version

Report number: NBI QDEV CMT 2016

Journal ref: Nat. Commun. 7, 12841 (2016)

Spatially resolved breakdown in reentrant quantum Hall states

Authors: A. V. Rossokhaty, J. A. Folk, Y. Baum, J. D. Watson, G. C. Gardner, M. J. Manfra

Abstract: Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, though their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. We present spatially-resolved measurements of RIQH breakdown that indicate the… ▽ More Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, though their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. We present spatially-resolved measurements of RIQH breakdown that indicate these breakdown signatures can be ascribed to a phase boundary between broken-down and unbroken regions, spreading chirally from source and drain contacts as a function of bias current and passing voltage probes one by one. The chiral sense of the spreading is not set by the chirality of the edge state itself, instead depending on electron- or hole-like character of the RIQH state. △ Less

Submitted 18 January, 2016; v1 submitted 9 December, 2015; originally announced December 2015.

Comments: arXiv admin note: substantial text overlap with arXiv:1412.1921

Journal ref: Phys. Rev. Lett. 117, 166805 (2016)

Milestones toward Majorana-based quantum computing

Authors: David Aasen, Michael Hell, Ryan V. Mishmash, Andrew Higginbotham, Jeroen Danon, Martin Leijnse, Thomas S. Jespersen, Joshua A. Folk, Charles M. Marcus, Karsten Flensberg, Jason Alicea

Abstract: We introduce a scheme for preparation, manipulation, and readout of Majorana zero modes in semiconducting wires with mesoscopic superconducting islands. Our approach synthesizes recent advances in materials growth with tools commonly used in quantum-dot experiments, including gate-control of tunnel barriers and Coulomb effects, charge sensing, and charge pum**. We outline a sequence of milestone… ▽ More We introduce a scheme for preparation, manipulation, and readout of Majorana zero modes in semiconducting wires with mesoscopic superconducting islands. Our approach synthesizes recent advances in materials growth with tools commonly used in quantum-dot experiments, including gate-control of tunnel barriers and Coulomb effects, charge sensing, and charge pum**. We outline a sequence of milestones interpolating between zero-mode detection and quantum computing that includes (1) detection of fusion rules for non-Abelian anyons using either proximal charge sensors or pumped current; (2) validation of a prototype topological qubit; and (3) demonstration of non-Abelian statistics by braiding in a branched geometry. The first two milestones require only a single wire with two islands, and additionally enable sensitive measurements of the system's excitation gap, quasiparticle poisoning rates, residual Majorana zero-mode splittings, and topological-qubit coherence times. These pre-braiding experiments can be adapted to other manipulation and readout schemes as well. △ Less

Submitted 12 April, 2016; v1 submitted 16 November, 2015; originally announced November 2015.

Comments: 27 pages, 12 figures, greatly expanded discussion on manipulation strategies and fusion-rule/qubit protocols

Report number: NBI QDEV CMT 2015

Journal ref: Phys. Rev. X 6, 031016 (2016)

Edge Transport in the Trivial Phase of InAs/GaSb

Authors: Fabrizio Nichele, Henri J. Suominen, Morten Kjaergaard, Charles M. Marcus, Ebrahim Sajadi, Joshua A. Folk, Fanming Qu, Arjan J. A. Beukman, Folkert K. de Vries, Jasper van Veen, Stevan Nadj-Perge, Leo P. Kouwenhoven, Binh-Minh Nguyen, Andrey A. Kiselev, Wei Yi, Marko Sokolich, Michael J. Manfra, Eric M. Spanton, Kathryn A. Moler

Abstract: We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resemb… ▽ More We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations. △ Less

Submitted 7 August, 2016; v1 submitted 5 November, 2015; originally announced November 2015.

Report number: NBI QDEV 2015

Journal ref: New J. Phys. 18, 083005 (2016)

Influence of impurity spin dynamics on quantum transport in epitaxial graphene

Authors: Samuel Lara-Avila, Sergey Kubatkin, Oleksiy Kashuba, Joshua A. Folk, Silvia Lüscher, Rositza Yakimova, T. J. B. M. Janssen, Alexander Tzalenchuk, Vladimir Fal'ko

Abstract: Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is cau… ▽ More Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is caused at least in part by spinful scatterers. A non-monotonic dependence of effective decoherence rate on $B_{\parallel}$ reveals the intricate role of scatterers' spin dynamics in forming the interference correction to conductivity, an effect that has gone unnoticed in earlier weak localisation studies △ Less

Submitted 14 July, 2015; originally announced July 2015.

Journal ref: Phys. Rev. Lett. 115, 106602 (2015)

Bias-induced breakdown of electron solids in the second Landau level

Authors: Alexander V. Rossokhaty, Silvia Lüscher, Joshua A. Folk, John D. Watson, Geoffrey C. Gardner, Michael J. Manfra

Abstract: Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, though their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. A comparison of RIQH breakdown characteristics at multiple voltage probes indi… ▽ More Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, though their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. A comparison of RIQH breakdown characteristics at multiple voltage probes indicates that these signatures can be ascribed to a phase boundary between broken-down and unbroken regions, spreading chirally from source and drain contacts as a function of bias current and passing voltage probes one by one. The chiral sense of the spreading is not set by the chirality of the edge state itself, instead depending on electron- or hole-like character of the RIQH state. △ Less

Submitted 27 May, 2016; v1 submitted 5 December, 2014; originally announced December 2014.

Low-temperature illumination and annealing of ultra-high quality quantum wells

Authors: Mohammad Samani, Alexander V. Rossokhaty, Ebrahim Sajadi, Silvia Lüscher, Joshua A. Folk, John D. Watson, Geoffrey C. Gardner, Michael J. Manfra

Abstract: The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dra… ▽ More The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dramatically improves FQH characteristics. A reliable illumination and annealing recipe is developed that yields an energy gap of 600 mK for the 5/2 state. △ Less

Submitted 17 August, 2014; originally announced August 2014.

Journal ref: Phys. Rev. B 90, 121405 (2014)

Origins of Nonlocality near the Dirac Point in Graphene

Authors: Julien Renard, Matthias Studer, Joshua A. Folk

Abstract: We present an experimental study of nonlocal electrical signals near the Dirac point in graphene. The in-plane magnetic field dependence of the nonlocal signal confirms the role of spin in this effect, as expected from recent predictions of Zeeman spin Hall effect in graphene, but our experiments show that thermo-magneto-electric effects also contribute to nonlocality, and the effect is sometimes… ▽ More We present an experimental study of nonlocal electrical signals near the Dirac point in graphene. The in-plane magnetic field dependence of the nonlocal signal confirms the role of spin in this effect, as expected from recent predictions of Zeeman spin Hall effect in graphene, but our experiments show that thermo-magneto-electric effects also contribute to nonlocality, and the effect is sometimes stronger than that due to spin. Thermal effects are seen to be very sensitive to sample details that do not influence other transport parameters. △ Less

Submitted 26 September, 2013; originally announced September 2013.

Comments: Supplementary material available on request

Defect-mediated spin relaxation and dephasing in graphene

Authors: Mark B. Lundeberg, Rui Yang, Julien Renard, Joshua A. Folk

Abstract: A principal motivation to develop graphene for future devices has been its promise for quantum spintronics. Hyperfine and spin-orbit interactions are expected to be negligible in single-layer graphene. Spin transport experiments, on the other hand, show that graphene's spin relaxation is orders of magnitude faster than predicted. We present a quantum interference measurement that disentangles sour… ▽ More A principal motivation to develop graphene for future devices has been its promise for quantum spintronics. Hyperfine and spin-orbit interactions are expected to be negligible in single-layer graphene. Spin transport experiments, on the other hand, show that graphene's spin relaxation is orders of magnitude faster than predicted. We present a quantum interference measurement that disentangles sources of magnetic and non-magnetic decoherence in graphene. Magnetic defects are shown to be the primary cause of spin relaxation, while spin-orbit interaction is undetectably small. △ Less

Submitted 6 November, 2012; originally announced November 2012.

Comments: 11 pages, includes main text and supplement

Journal ref: Phys. Rev. Lett. 110, 156601 (2013)

Gate voltage control over spin relaxation length

Authors: S. M. Frolov, W. W. Yu, S. Luescher, J. A. Folk, W. Wegscheider

Abstract: Spin currents in channels of a high mobility GaAs/AlGaAs two-dimensional electron gas are generated and detected using spin-polarized quantum point contacts. We have recently shown that the relaxation length of spin currents is resonantly suppressed when the frequency at which electrons bounce between channel walls matches the Larmor frequency. Here we demonstrate that a gate on top of the channel… ▽ More Spin currents in channels of a high mobility GaAs/AlGaAs two-dimensional electron gas are generated and detected using spin-polarized quantum point contacts. We have recently shown that the relaxation length of spin currents is resonantly suppressed when the frequency at which electrons bounce between channel walls matches the Larmor frequency. Here we demonstrate that a gate on top of the channel tunes such ballistic spin resonance by tuning the velocity of electrons and hence the bouncing frequency. These findings demonstrate a new mechanism for electrical control of spin logic circuits. △ Less

Submitted 15 August, 2012; originally announced August 2012.

Conductance fluctuations in quasi-two-dimensional systems: a practical view

Authors: M. B. Lundeberg, J. Renard, J. A. Folk

Abstract: The universal conductance fluctuations of quasi-two-dimensional systems are analyzed with experimental considerations in mind. The traditional statistical metrics of these fluctuations (such as variance) are shown to have large statistical errors in such systems. An alternative characteristic is identified, the inflection point of the correlation function in magnetic field, which is shown to be si… ▽ More The universal conductance fluctuations of quasi-two-dimensional systems are analyzed with experimental considerations in mind. The traditional statistical metrics of these fluctuations (such as variance) are shown to have large statistical errors in such systems. An alternative characteristic is identified, the inflection point of the correlation function in magnetic field, which is shown to be significantly more useful as an experimental metric and to give a more robust measure of phase coherence. △ Less

Submitted 14 June, 2012; originally announced June 2012.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 86, 205413 (2012)

Real-Time Imaging of K atoms on Graphite: Interactions and Diffusion

Authors: J. Renard, M. B. Lundeberg, J. A. Folk, Y. Pennec

Abstract: Scanning tunneling microscopy (STM) at liquid helium temperature is used to image potassium adsorbed on graphite at low coverage (~0.02 monolayer). Single atoms appear as protrusions on STM topographs. A statistical analysis of the position of the atoms demonstrates repulsion between adsorbates, which is quantified by comparison with molecular dynamics simulations. This gives access to the dipole… ▽ More Scanning tunneling microscopy (STM) at liquid helium temperature is used to image potassium adsorbed on graphite at low coverage (~0.02 monolayer). Single atoms appear as protrusions on STM topographs. A statistical analysis of the position of the atoms demonstrates repulsion between adsorbates, which is quantified by comparison with molecular dynamics simulations. This gives access to the dipole moment of a single adsorbate, found to be 10.5 Debye. Time lapse imaging shows that long range order is broken by thermally activated diffusion, with a 32 meV barrier to hop** between graphite lattice sites. △ Less

Submitted 30 September, 2010; originally announced September 2010.

Journal ref: Phys. Rev. Lett. 106, 156101 (2011)

Spin-orbit anisotropy measured using ballistic spin resonance

Authors: W. W. Yu, S. M. Frolov, S. Luescher, J. A. Folk, W. Wegscheider

Abstract: Spin relaxation can be greatly enhanced in narrow channels of two-dimensional electron gas due to ballistic spin resonance, which is mediated by spin-orbit interaction for trajectories that bounce rapidly between channel walls. The channel orientation determines which momenta affect the relaxation process, so comparing relaxation for two orientations provides a direct determination of spin-orbit a… ▽ More Spin relaxation can be greatly enhanced in narrow channels of two-dimensional electron gas due to ballistic spin resonance, which is mediated by spin-orbit interaction for trajectories that bounce rapidly between channel walls. The channel orientation determines which momenta affect the relaxation process, so comparing relaxation for two orientations provides a direct determination of spin-orbit anisotropy. Electrical measurements of pure spin currents are shown to reveal an order of magnitude stronger relaxation for channels fabricated along the [110] crystal axis in a GaAs electron gas compared to [-110] channels, believed to result from interference between structural and bulk inversion asymmetries. △ Less

Submitted 28 September, 2010; originally announced September 2010.

Zero-bias Anomaly of Quantum Point Contacts in the Low-Conductance Limit

Authors: Y. Ren, W. W. Yu, S. M. Frolov, J. A. Folk, W. Wegscheider

Abstract: Most quantum point contacts (QPCs) fabricated in high-mobility 2D electron gases show a zero-bias conductance peak near pinchoff, but the origin of this peak remains a mystery. Previous experiments have primarily focused on the zero-bias peak at moderate conductance, in the range (1-2)e^2/h. Here, measurements are presented of zero-bias peaks that persist down to 10^{-4}e^2/h. Magnetic field and t… ▽ More Most quantum point contacts (QPCs) fabricated in high-mobility 2D electron gases show a zero-bias conductance peak near pinchoff, but the origin of this peak remains a mystery. Previous experiments have primarily focused on the zero-bias peak at moderate conductance, in the range (1-2)e^2/h. Here, measurements are presented of zero-bias peaks that persist down to 10^{-4}e^2/h. Magnetic field and temperature dependencies of the zero-bias peak in the low-conductance limit are qualitatively different from the analogous phenomenology at higher conductance, with implications for existing theoretical models of transport in low-density QPCs. △ Less

Submitted 9 July, 2010; v1 submitted 20 May, 2010; originally announced May 2010.

Measurement of spin-dependent conductivities in a two-dimensional electron gas

Authors: H. Ebrahimnejad, Y. Ren, S. M. Frolov, I. Adagideli, J. A. Folk, W. Wegscheider

Abstract: Spin accumulation is generated by injecting an unpolarized charge current into a channel of GaAs two-dimensional electron gas subject to an in-plane magnetic field, then measured in a non-local geometry. Unlike previous measurements that have used spin-polarized nanostructures, here the spin accumulation arises simply from the difference in bulk conductivities for spin-up and spin-down carriers. C… ▽ More Spin accumulation is generated by injecting an unpolarized charge current into a channel of GaAs two-dimensional electron gas subject to an in-plane magnetic field, then measured in a non-local geometry. Unlike previous measurements that have used spin-polarized nanostructures, here the spin accumulation arises simply from the difference in bulk conductivities for spin-up and spin-down carriers. Comparison to a diffusive model that includes spin subband splitting in magnetic field suggests a significantly enhanced electron spin susceptibility in the 2D electron gas. △ Less

Submitted 19 May, 2010; originally announced May 2010.

Numerical study of resonant spin relaxation in quasi-1D channels

Authors: S. Luescher, S. M. Frolov, J. A. Folk

Abstract: Recent experiments demonstrate that a ballistic version of spin resonance, mediated by spin-orbit interaction, can be induced in narrow channels of a high-mobility GaAs two-dimensional electron gas by matching the spin precession frequency with the frequency of bouncing trajectories in the channel. Contrary to the typical suppression of Dyakonov-Perel' spin relaxation in confined geometries, the… ▽ More Recent experiments demonstrate that a ballistic version of spin resonance, mediated by spin-orbit interaction, can be induced in narrow channels of a high-mobility GaAs two-dimensional electron gas by matching the spin precession frequency with the frequency of bouncing trajectories in the channel. Contrary to the typical suppression of Dyakonov-Perel' spin relaxation in confined geometries, the spin relaxation rate increases by orders of magnitude on resonance. Here, we present Monte Carlo simulations of this effect to explore the roles of varying degrees of disorder and strength of spin-orbit interaction. These simulations help to extract quantitative spin-orbit parameters from experimental measurements of ballistic spin resonance, and may guide the development of future spintronic devices. △ Less

Submitted 6 April, 2010; originally announced April 2010.

Nuclear Spin Dynamics in Double Quantum Dots: Fixed Points, Transients, and Intermittency

Authors: M. S. Rudner, F. H. L. Koppens, J. A. Folk, L. M. K. Vandersypen, L. S. Levitov

Abstract: Transport through spin-blockaded quantum dots provides a means for electrical control and detection of nuclear spin dynamics in the host material. Although such experiments have become increasingly popular in recent years, interpretation of their results in terms of the underlying nuclear spin dynamics remains challenging. Here we point out a fundamental process in which nuclear spin dynamics can… ▽ More Transport through spin-blockaded quantum dots provides a means for electrical control and detection of nuclear spin dynamics in the host material. Although such experiments have become increasingly popular in recent years, interpretation of their results in terms of the underlying nuclear spin dynamics remains challenging. Here we point out a fundamental process in which nuclear spin dynamics can be driven by electron shot noise; fast electric current fluctuations generate much slower nuclear polarization dynamics, which in turn affect electron dynamics via the Overhauser field. The resulting extremely slow intermittent current fluctuations account for a variety of observed phenomena that were not previously understood. △ Less

Submitted 9 August, 2011; v1 submitted 11 January, 2010; originally announced January 2010.

Comments: version accepted for publication in Physical Review B, figure repaired

Journal ref: Phys. Rev. B 84, 075339 (2011)

Nuclear Polarization in Quantum Point Contacts in an In-Plane Magnetic Field

Authors: Y. Ren, W. Yu, S. M. Frolov, J. A. Folk, W. Wegscheider

Abstract: Nuclear spin polarization is typically generated in GaAs quantum point contacts (QPCs) when an out-of-plane magnetic field gives rise to spin-polarized quantum Hall edge states, and a voltage bias drives transitions between the edge states via electron-nuclear flip-flop scattering. Here, we report a similar effect for QPCs in an in-plane magnetic field, where currents are spin polarized but edge s… ▽ More Nuclear spin polarization is typically generated in GaAs quantum point contacts (QPCs) when an out-of-plane magnetic field gives rise to spin-polarized quantum Hall edge states, and a voltage bias drives transitions between the edge states via electron-nuclear flip-flop scattering. Here, we report a similar effect for QPCs in an in-plane magnetic field, where currents are spin polarized but edge states are not formed. The nuclear polarization gives rise to hysteresis in the d.c. transport characteristics, with relaxation timescales around 100 seconds. The dependence of anomalous QPC conductance features on nuclear polarization provides a useful test of their spin-sensitivity. △ Less

Submitted 19 May, 2010; v1 submitted 26 October, 2009; originally announced October 2009.

Comments: 5 pages

Rippled Graphene in an In-Plane Magnetic Field: Effects of a Random Vector Potential

Authors: Mark B. Lundeberg, Joshua A. Folk

Abstract: We report measurements of the effects of a random vector potential generated by applying an in-plane magnetic field to a graphene flake. Magnetic flux through the ripples cause orbital effects: phase-coherent weak localization is suppressed, while quasi-random Lorentz forces lead to anisotropic magnetoresistance. Distinct signatures of these two effects enable an independent estimation of the ripp… ▽ More We report measurements of the effects of a random vector potential generated by applying an in-plane magnetic field to a graphene flake. Magnetic flux through the ripples cause orbital effects: phase-coherent weak localization is suppressed, while quasi-random Lorentz forces lead to anisotropic magnetoresistance. Distinct signatures of these two effects enable an independent estimation of the ripple amplitude and correlation length. △ Less

Submitted 26 July, 2010; v1 submitted 22 October, 2009; originally announced October 2009.

Comments: Various changes; added appendix for Boltzmann calculation of anisotropic magnetoresistance

Journal ref: Phys. Rev. Lett. 105, 146804 (2010)

Spin-resolved Quantum Interference in Graphene

Authors: Mark B. Lundeberg, Joshua A. Folk

Abstract: The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to be particularly interesting, with predictions for extremely long coherence times and intrinsic spin-polarized states at zero field. In order to test such pre… ▽ More The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to be particularly interesting, with predictions for extremely long coherence times and intrinsic spin-polarized states at zero field. In order to test such predictions, it is necessary to measure the spin polarization of electrical currents in graphene. Here, we resolve spin transport directly from conductance features that are caused by quantum interference. These features split visibly in an in-plane magnetic field, similar to Zeeman splitting in atomic and quantum dot systems. The spin-polarized conductance features that are the subject of this work may, in the future, lead to the development of graphene devices incorporating interference-based spin filters. △ Less

Submitted 14 April, 2009; originally announced April 2009.

Comments: 12 pages, 4 figures, plus supplementary (11 pages, 9 figures)

Ballistic Spin Resonance

Authors: S. M. Frolov, S. Luscher, W. Yu, Y. Ren, J. A. Folk, W. Wegscheider

Abstract: The phenomenon of spin resonance has had far reaching influence since its discovery nearly 70 years ago. Electron spin resonance (ESR) driven by high frequency magnetic fields has informed our understanding of quantum mechanics, and finds application in fields as diverse as medicine and quantum information. Spin resonance induced by high frequency electric fields, known as electric dipole spin r… ▽ More The phenomenon of spin resonance has had far reaching influence since its discovery nearly 70 years ago. Electron spin resonance (ESR) driven by high frequency magnetic fields has informed our understanding of quantum mechanics, and finds application in fields as diverse as medicine and quantum information. Spin resonance induced by high frequency electric fields, known as electric dipole spin resonance (EDSR), has also been demonstrated recently. EDSR is mediated by spin-orbit interaction (SOI), which couples the spin degree of freedom and the momentum vector. Here, we report the observation of a novel spin resonance due to SOI that does not require external driving fields. Ballistic spin resonance (BSR) is driven by an internal spin-orbit field that acts upon electrons bouncing at gigaHertz frequencies in narrow channels of ultra-clean two-dimensional electron gas (2DEG). BSR is manifested in electrical measurements of pure spin currents as a strong suppression of spin relaxation length when the motion of electrons is in resonance with spin precession. These findings point the way to gate-tunable coherent spin rotations in ballistic nanostructures without external a.c. fields. △ Less

Submitted 7 November, 2008; originally announced November 2008.

Comments: 24 pages, including supplementary materials

Journal ref: Nature 458 868 (2009)

Electrical generation of pure spin currents in a two-dimensional electron gas

Authors: S. M. Frolov, A. Venkatesan, W. Yu, W. Wegscheider, J. A. Folk

Abstract: Pure spin currents are measured in micron-wide channels of GaAs two-dimensional electron gas (2DEG). Spins are injected and detected using quantum point contacts, which become spin polarized at high magnetic field. High sensitivity to the spin signal is achieved in a nonlocal measurement geometry, which dramatically reduces spurious signals associated with charge currents. Measured spin relaxati… ▽ More Pure spin currents are measured in micron-wide channels of GaAs two-dimensional electron gas (2DEG). Spins are injected and detected using quantum point contacts, which become spin polarized at high magnetic field. High sensitivity to the spin signal is achieved in a nonlocal measurement geometry, which dramatically reduces spurious signals associated with charge currents. Measured spin relaxation lengths range from 30 to 50 microns, much longer than has been reported in GaAs 2DEG's. The technique developed here provides a flexible tool for the study of spin polarization and spin dynamics in mesoscopic structures defined in 2D semiconductor systems. △ Less

Submitted 2 October, 2008; v1 submitted 25 January, 2008; originally announced January 2008.

Electron transport through single Mn12 molecular magnets

Authors: H. B. Heersche, Z. de Groot, J. A. Folk, H. S. J. van der Zant, C. Romeike, M. R. Wegewijs, L. Zobbi, D. Barreca, E. Tondello, A. Cornia

Abstract: We report transport measurements through a single-molecule magnet, the Mn12 derivative [Mn12O12(O2C-C6H4-SAc)16(H2O)4], in a single-molecule transistor geometry. Thiol groups connect the molecule to gold electrodes that are fabricated by electromigration. Striking observations are regions of complete current suppression and excitations of negative differential conductance on the energy scale of… ▽ More We report transport measurements through a single-molecule magnet, the Mn12 derivative [Mn12O12(O2C-C6H4-SAc)16(H2O)4], in a single-molecule transistor geometry. Thiol groups connect the molecule to gold electrodes that are fabricated by electromigration. Striking observations are regions of complete current suppression and excitations of negative differential conductance on the energy scale of the anisotropy barrier of the molecule. Transport calculations, taking into account the high-spin ground state and magnetic excitations of the molecule, reveal a blocking mechanism of the current involving non-degenerate spin multiplets. △ Less

Submitted 29 March, 2006; v1 submitted 27 October, 2005; originally announced October 2005.

Comments: Accepted for Phys. Rev. Lett., 5 pages, 4 figures

Control and Detection of Singlet-Triplet Mixing in a Random Nuclear Field

Authors: F. H. L. Koppens, J. A. Folk, J. M. Elzerman, R. Hanson, L. H. Willems van Beveren, I. T. Vink, H. P. Tranitz, W. Wegscheider, L. P. Kouwenhoven, L. M. K. Vandersypen

Abstract: We observe mixing between two-electron singlet and triplet states in a double quantum dot, caused by interactions with nuclear spins in the host semiconductor. This mixing is suppressed by applying a small magnetic field, or by increasing the interdot tunnel coupling and thereby the singlet-triplet splitting. Electron transport involving transitions between triplets and singlets in turn polarize… ▽ More We observe mixing between two-electron singlet and triplet states in a double quantum dot, caused by interactions with nuclear spins in the host semiconductor. This mixing is suppressed by applying a small magnetic field, or by increasing the interdot tunnel coupling and thereby the singlet-triplet splitting. Electron transport involving transitions between triplets and singlets in turn polarizes the nuclei, resulting in striking bistabilities. We extract from the fluctuating nuclear field a limitation on the time-averaged spin coherence time T2* of 25 ns. Control of the electron-nuclear interaction will therefore be crucial for the coherent manipulation of individual electron spins. △ Less

Submitted 2 September, 2005; originally announced September 2005.

Comments: 4 pages main text, 4 figures

Journal ref: Science vol 309 p.1346 (2005)

The Kondo Effect in the Presence of Magnetic Impurities

Authors: H. B. Heersche, Z. de Groot, J. A. Folk, L. P. Kouwenhoven, H. S. J. van der Zant, A. A. Houck, J. Labaziewicz, I. L. Chuang

Abstract: We measure transport through gold grain quantum dots fabricated using electromigration, with magnetic impurities in the leads. A Kondo interaction is observed between dot and leads, but the presence of magnetic impurities results in a gate-dependent zero-bias conductance peak that is split due to an RKKY interaction between the spin of the dot and the static spins of the impurities. A magnetic f… ▽ More We measure transport through gold grain quantum dots fabricated using electromigration, with magnetic impurities in the leads. A Kondo interaction is observed between dot and leads, but the presence of magnetic impurities results in a gate-dependent zero-bias conductance peak that is split due to an RKKY interaction between the spin of the dot and the static spins of the impurities. A magnetic field restores the single Kondo peak in the case of an antiferromagnetic RKKY interaction. This system provides a new platform to study Kondo and RKKY interactions in metals at the level of a single spin. △ Less

Submitted 17 August, 2005; originally announced August 2005.

Comments: 5 pages, 4 figures

Kondo Effect in Electromigrated Gold Break Junctions

Authors: A. A. Houck, J. Labaziewicz, E. K. Chan, J. A. Folk, I. L. Chuang

Abstract: We present gate-dependent transport measurements of Kondo impurities in bare gold break junctions, generated with high yield using an electromigration process that is actively controlled. Thirty percent of measured devices show zero-bias conductance peaks. Temperature dependence suggests Kondo temperatures \~7K. The peak splitting in magnetic field is consistent with theoretical predictions for… ▽ More We present gate-dependent transport measurements of Kondo impurities in bare gold break junctions, generated with high yield using an electromigration process that is actively controlled. Thirty percent of measured devices show zero-bias conductance peaks. Temperature dependence suggests Kondo temperatures \~7K. The peak splitting in magnetic field is consistent with theoretical predictions for g=2, though in many devices the splitting is offset from 2guB by a fixed energy. The Kondo resonances observed here may be due to atomic-scale metallic grains formed during electromigration. △ Less

Submitted 28 October, 2004; originally announced October 2004.

Comments: 5 pages, 3 figures

Spin and Polarized Current from Coulomb Blockaded Quantum Dots

Authors: R. M. Potok, J. A. Folk, C. M. Marcus, V. Umansky, M. Hanson, A. C. Gossard

Abstract: We report measurements of spin transitions for GaAs quantum dots in the Coulomb blockade regime, and compare ground and excited state transport spectroscopy to direct measurements of the spin polarization of emitted current. Transport spectroscopy reveals both spin-increasing and spin-decreasing transitions as well as higher-spin ground states, and allows g-factors to be measured down to a singl… ▽ More We report measurements of spin transitions for GaAs quantum dots in the Coulomb blockade regime, and compare ground and excited state transport spectroscopy to direct measurements of the spin polarization of emitted current. Transport spectroscopy reveals both spin-increasing and spin-decreasing transitions as well as higher-spin ground states, and allows g-factors to be measured down to a single electron. The spin of emitted current in the Coulomb blockade regime, measured using spin-sensitive electron focusing, is found to be polarized along the direction of the applied magnetic field regardless of the ground state spin transition. △ Less

Submitted 8 March, 2003; originally announced March 2003.

Comments: related papers at http://marcuslab.harvard.edu

Journal ref: Phys. Rev. Lett. 91, 016802 (2003)

Detecting Spin-Polarized Currents in Ballistic Nanostructures

Authors: R. M. Potok, J. A. Folk, C. M. Marcus, V. Umansky

Abstract: We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from an emitter point contact into a collector point contact. At large in-plane fields, with the point contacts biased to transmit only a single spin (g < e^2/h),… ▽ More We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from an emitter point contact into a collector point contact. At large in-plane fields, with the point contacts biased to transmit only a single spin (g < e^2/h), the voltage across the collector depends on the spin polarization of the current incident on it. Spin polarizations of greater than 80% are found for both emitter and collector at 300mK and 7T in-plane field. △ Less

Submitted 19 June, 2002; originally announced June 2002.

Comments: related papers at http://marcuslab.harvard.edu

Journal ref: Phys. Rev. Lett. 89, 266602 (2002).

Ground state spin and Coulomb blockade peak motion in chaotic quantum dots

Authors: J. A. Folk, C. M. Marcus, R. Berkovits, I. L. Kurland, I. L. Aleiner, B. L. Altshuler

Abstract: We investigate experimentally and theoretically the behavior of Coulomb blockade (CB) peaks in a magnetic field that couples principally to the ground-state spin (rather than the orbital moment) of a chaotic quantum dot. In the first part, we discuss numerically observed features in the magnetic field dependence of CB peak and spacings that unambiguously identify changes in spin S of each ground… ▽ More We investigate experimentally and theoretically the behavior of Coulomb blockade (CB) peaks in a magnetic field that couples principally to the ground-state spin (rather than the orbital moment) of a chaotic quantum dot. In the first part, we discuss numerically observed features in the magnetic field dependence of CB peak and spacings that unambiguously identify changes in spin S of each ground state for successive numbers of electrons on the dot, N. We next evaluate the probability that the ground state of the dot has a particular spin S, as a function of the exchange strength, J, and external magnetic field, B. In the second part, we describe recent experiments on gate-defined GaAs quantum dots in which Coulomb peak motion and spacing are measured as a function of in-plane magnetic field, allowing changes in spin between N and N+1 electron ground states to be inferred. △ Less

Submitted 27 October, 2000; originally announced October 2000.

Comments: To appear in Proceedings of the Nobel Symposium 2000 (Physica Scripta)

Decoherence in Nearly-Isolated Quantum Dots

Authors: J. A. Folk, C. M. Marcus, J. S. Harris Jr

Abstract: Decoherence in nearly-isolated GaAs quantum dots is investigated using the change in average Coulomb blockade peak height upon breaking time-reversal symmetry. The normalized change in average peak height approaches the predicted universal value of 1/4 at temperatures well below the single-particle level spacing, but is greatly suppressed for temperature greater than the level spacing, suggestin… ▽ More Decoherence in nearly-isolated GaAs quantum dots is investigated using the change in average Coulomb blockade peak height upon breaking time-reversal symmetry. The normalized change in average peak height approaches the predicted universal value of 1/4 at temperatures well below the single-particle level spacing, but is greatly suppressed for temperature greater than the level spacing, suggesting that inelastic scattering or other dephasing mechanisms dominate in this regime. △ Less

Submitted 8 June, 2001; v1 submitted 3 August, 2000; originally announced August 2000.

Comments: Significant revisions to include comparison to theory. Related papers available at http://marcuslab.harvard.edu

Journal ref: Phys. Rev. Lett. 87, 206802 (2001)

Spin Degeneracy and Conductance Fluctuations in Open Quantum Dots

Authors: J. A. Folk, S. R. Patel, K. M. Birnbaum, C. M. Marcus, C. I. Duruoz, J. S. Harris Jr

Abstract: The dependence of mesoscopic conductance fluctuations on parallel magnetic field is used as a probe of spin degeneracy in open GaAs quantum dots. The variance of fluctuations at high parallel field is reduced from the low-field variance (with broken time-reversal symmetry) by factors ranging from roughly two in a 1 square-micron dot at low temperature, to four or greater in 8 square-micron dots.… ▽ More The dependence of mesoscopic conductance fluctuations on parallel magnetic field is used as a probe of spin degeneracy in open GaAs quantum dots. The variance of fluctuations at high parallel field is reduced from the low-field variance (with broken time-reversal symmetry) by factors ranging from roughly two in a 1 square-micron dot at low temperature, to four or greater in 8 square-micron dots. The factor of two is expected for simple Zeeman splitting of spin degenerate channels. A possible explanation for the unexpected larger factors in terms of field-dependent spin orbit scattering is proposed. △ Less

Submitted 8 November, 2000; v1 submitted 3 May, 2000; originally announced May 2000.

Comments: Includes new reference to related theoretical work, cond-mat/0010064. Other minor changes. Related papers at http://marcuslab.harvard.edu

Journal ref: Phys. Rev. Lett. 86, 2102 (2001)

Low-Temperature Saturation of the Dephasing Time and Effects of Microwave Radiation on Open Quantum Dots

Authors: A. G. Huibers, J. A. Folk, S. R. Patel, C. M. Marcus, C. I. Duruoz, J. S. Harris, Jr

Abstract: The dephasing time of electrons in open semiconductor quantum dots, measured using ballistic weak localization, is found to saturate below ~ 100 mK, roughly twice the electron base temperature, independent of dot size. Microwave radiation deliberately coupled to the dots affects quantum interference indistinguishably from elevated temperature, suggesting that direct dephasing due to radiation is… ▽ More The dephasing time of electrons in open semiconductor quantum dots, measured using ballistic weak localization, is found to saturate below ~ 100 mK, roughly twice the electron base temperature, independent of dot size. Microwave radiation deliberately coupled to the dots affects quantum interference indistinguishably from elevated temperature, suggesting that direct dephasing due to radiation is not the cause of the observed saturation. Coulomb blockade measurements show that the applied microwaves create sufficient source drain voltages to account for dephasing due to Joule heating. △ Less

Submitted 20 April, 1999; originally announced April 1999.

Comments: related papers available at http://www.stanford.edu/group/MarcusLab/

Journal ref: Phys. Rev. Lett 83, 5090 (1999)

Quantum Chaos in Open versus Closed Quantum Dots: Signatures of Interacting Particles

Authors: C. M. Marcus, S. R. Patel, A. G. Huibers, S. M. Cronenwett, M. Switkes, I. H. Chan, R. M. Clarke, J. A. Folk, S. F. Godijn, K. Campman, A. C. Gossard

Abstract: This paper reviews recent studies of mesoscopic fluctuations in transport through ballistic quantum dots, emphasizing differences between conduction through open dots and tunneling through nearly isolated dots. Both the open dots and the tunnel-contacted dots show random, repeatable conductance fluctuations with universal statistical proper-ties that are accurately characterized by a variety of… ▽ More This paper reviews recent studies of mesoscopic fluctuations in transport through ballistic quantum dots, emphasizing differences between conduction through open dots and tunneling through nearly isolated dots. Both the open dots and the tunnel-contacted dots show random, repeatable conductance fluctuations with universal statistical proper-ties that are accurately characterized by a variety of theoretical models including random matrix theory, semiclassical methods and nonlinear sigma model calculations. We apply these results in open dots to extract the dephasing rate of electrons within the dot. In the tunneling regime, electron interaction dominates transport since the tunneling of a single electron onto a small dot may be sufficiently energetically costly (due to the small capacitance) that conduction is suppressed altogether. How interactions combine with quantum interference are best seen in this regime. △ Less

Submitted 5 March, 1997; v1 submitted 4 March, 1997; originally announced March 1997.

Comments: 15 pages, 11 figures, PDF 2.1 format, to appear in "Chaos, Solitons & Fractals"