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Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy
Authors:
Zhe Cheng,
Tingyu Bai,
**g**g Shi,
Tianli Feng,
Yekan Wang,
Matthew Mecklenburg,
Chao Li,
Karl D. Hobart,
Tatyana I. Feygelson,
Marko J. Tadjer,
Bradford B. Pate,
Brian M. Foley,
Luke Yates,
Sokrates T. Pantelides,
Baratunde A. Cola,
Mark Goorsky,
Samuel Graham
Abstract:
The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at interface between dissimilar materials. However, controlling and tuning heat transport…
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The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at interface between dissimilar materials. However, controlling and tuning heat transport across an interface and in the adjacent materials has so far drawn limited attention. In this work, we grow chemical-vapor-deposited (CVD) diamond on silicon substrates by graphoepitaxy and experimentally demonstrate tunable thermal transport across diamond membranes and diamond-silicon interfaces. We observed the highest diamond-silicon thermal boundary conductance (TBC) measured to date and increased diamond thermal conductivity due to strong grain texturing in the diamond near the interface. Additionally, non-equilibrium molecular-dynamics (NEMD) simulations and a Landauer approach are used to understand the diamond-silicon TBC. These findings pave the way for tuning or increasing thermal conductance in heterogeneously integrated electronics that involve polycrystalline materials and will impact applications including electronics thermal management and diamond growth.
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Submitted 7 January, 2019; v1 submitted 30 July, 2018;
originally announced July 2018.
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Thermal Rectification in CVD Diamond Membranes Driven by Gradient Grain Structure
Authors:
Zhe Cheng,
Brian M. Foley,
Thomas Bougher,
Luke Yates,
Baratunde A. Cola,
Samuel Graham
Abstract:
As one of the basic components of phononics, thermal diodes transmit heat current asymmetrically similar to electronic rectifiers and diodes in microelectronics. Heat can be conducted through them easily in one direction while being blocked in the other direction. In this work, we report an easily-fabricated mesoscale chemical vapor deposited (CVD) diamond thermal diode without sharp temperature c…
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As one of the basic components of phononics, thermal diodes transmit heat current asymmetrically similar to electronic rectifiers and diodes in microelectronics. Heat can be conducted through them easily in one direction while being blocked in the other direction. In this work, we report an easily-fabricated mesoscale chemical vapor deposited (CVD) diamond thermal diode without sharp temperature change driven by the gradient grain structure of CVD diamond membranes. We build a spectral model of diamond thermal conductivity with complete phonon dispersion relation to show significant thermal rectification in CVD diamond membranes. To explain the observed thermal rectification, the temperature and thermal conductivity distribution in the CVD diamond membrane are studied. Additionally, the effects of temperature bias and diamond membrane thickness are discussed, which shed light on tuning the thermal rectification in CVD diamond membranes. The conical grain structure makes CVD diamond membranes, and potentially other CVD film structures with gradient grain structure, excellent candidates for easily-fabricated mesoscale thermal diodes without a sharp temperature change.
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Submitted 29 December, 2017; v1 submitted 19 December, 2017;
originally announced December 2017.
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Titanium Contacts to Graphene: Process-Induced Variability in Electronic and Thermal Transport
Authors:
Keren M. Freedy,
Ashutosh Giri,
Brian M. Foley,
Matthew R. Barone,
Patrick E. Hopkins,
Stephen McDonnell
Abstract:
Contact Resistance (RC) is a major limiting factor in the performance of graphene devices. RC is sensitive to the quality of the interface and the composition of the contact, which are affected by the graphene transfer process and contact deposition conditions. In this work, a linear correlation is observed between the composition of Ti contacts, characterized by X-ray photoelectron spectroscopy,…
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Contact Resistance (RC) is a major limiting factor in the performance of graphene devices. RC is sensitive to the quality of the interface and the composition of the contact, which are affected by the graphene transfer process and contact deposition conditions. In this work, a linear correlation is observed between the composition of Ti contacts, characterized by X-ray photoelectron spectroscopy, and the Ti/graphene (Gr) contact resistance measured by the transfer length method. We find that contact composition is tunable via deposition rate and base pressure. Reactor base pressure is found to effect the resultant contact resistance. The effect of contact deposition conditions on thermal transport measured by time-domain thermoreflectance is also reported and interfaces with higher oxide composition appear to result in a lower thermal boundary conductance. Possible origins of this thermal boundary conductance change with oxide composition are discussed.
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Submitted 1 December, 2017;
originally announced December 2017.
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Thermal boundary conductance across epitaxial ZnO/GaN interfaces: Assessment of phonon gas models and atomistic Green's function approaches for predicting interfacial phonon transport
Authors:
John T. Gaskins,
George Kotsonis,
Ashutosh Giri,
Christopher T. Shelton,
Edward Sachet,
Zhe Cheng,
Brian M. Foley,
Zeyu Liu,
Shenghong Ju,
Junichiro,
Mark S. Goorsky,
Samuel Graham,
Tengfei Luo,
Asegun Henry,
Jon-Paul Maria,
Patrick E. Hopkins
Abstract:
We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous ex…
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We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous experimental data, suggest that the TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the "vibrational mismatch" concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as $490\lbrack +150, -110\rbrack$ MW m$^{-2}$ K$^{-1}$. The disagreement among the DMM and AGF and the experimental data these elevated temperatures suggests a non-negligible contribution from additional modes contributing to TBC that not accounted for in the fundamental assumptions of these harmonic formalisms, such as inelastic scattering. Given the high quality of these ZnO/GaN interface, these results provide an invaluable critical and quantitive assessment of the accuracy of assumptions in the current state of the art of computational approaches for predicting the phonon TBC across interfaces.
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Submitted 25 October, 2017;
originally announced October 2017.
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Probing Growth-Induced Anisotropic Thermal Transport in CVD Diamond Membranes by Multi-frequency and Multi-spot-size Time-Domain Thermoreflectance
Authors:
Zhe Cheng,
Thomas Bougher,
Tingyu Bai,
Steven Y. Wang,
Chao Li,
Luke Yates,
Brian M. Foley,
Mark Goorsky,
Baratunde A. Cola,
Samuel Graham
Abstract:
The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating which degrades device performance and reliability. With generated heat fluxes within these devices reaching magnitude close to ten times of that at the sun surface, chemical vapor deposition (CVD) diamond is an attractive candidate to aid in the extracti…
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The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating which degrades device performance and reliability. With generated heat fluxes within these devices reaching magnitude close to ten times of that at the sun surface, chemical vapor deposition (CVD) diamond is an attractive candidate to aid in the extraction of this heat in order to keep the operating temperatures of these high power electronics as low as possible. Due to the observed inhomogeneous structure, CVD diamond membranes exhibit a 3D anisotropic thermal conductivity which may result in significantly different cooling performance from expected in a given application. In this work, time domain thermoreflectance (TDTR) is used to measure the thermal properties of an 11.8-μm CVD diamond membrane from its nucleation side. Starting with a spot size diameter larger than the thickness of the membrane, measurements are made at various modulation frequencies from 1.2 MHz to 11.6 MHz to tune the heat penetration depth, and subsequently the part of diamond sampled by TDTR. We divide the membrane into ten sublayers and assume isotropic thermal conductivity in each sublayer. From this, we observe a 2D gradient of the depth-dependent thermal conductivity for this membrane. By measuring the same region with a smaller spot size at multiple frequencies, the in-plane and cross-plane thermal conductivity are extracted respectively. Through this use of multiple spot sizes and modulation frequencies, the 3D anisotropic thermal conductivity of CVD diamond membrane is experimentally obtained by fitting the experimental data to a thermal model. This work provides insight toward an improved understanding of heat conduction inhomogeneity in CVD polycrystalline diamond membrane that is important for applications of thermal management of high power electronics.
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Submitted 1 August, 2017;
originally announced August 2017.
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Steady-State Thermal Analysis of an Integrated 160 GHz Balanced Quadrupler Based on Quasi-Vertical Schottky Diodes
Authors:
Souheil Nadri,
Linli Xie,
Naser Alijabbari,
John T. Gaskins,
Brian M. Foley,
Patrick E. Hopkins,
Robert M. Weikle II
Abstract:
This work reports on a steady-state thermal analysis of a 160 GHz balanced quadrupler, based on a quasi-vertical varactor Schottky diode process, for high power applications. The chip is analyzed by solving the heat equation via the 3D finite element method. Time-Domain Thermoreflectance (TDTR) was used to measure the thermal conductivity of the different materials used in the model. A maximum ano…
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This work reports on a steady-state thermal analysis of a 160 GHz balanced quadrupler, based on a quasi-vertical varactor Schottky diode process, for high power applications. The chip is analyzed by solving the heat equation via the 3D finite element method. Time-Domain Thermoreflectance (TDTR) was used to measure the thermal conductivity of the different materials used in the model. A maximum anode temperature of 64.9 C was found from the simulation. The addition of an extra beam lead connected to the block, for heat sinking, was found to reduce this maximum temperature to 41.0 C.
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Submitted 8 December, 2015;
originally announced December 2015.
