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Pipeline quantum processor architecture for silicon spin qubits
Authors:
S. M. Patomäki,
M. F. Gonzalez-Zalba,
M. A. Fogarty,
Z. Cai,
S. C. Benjamin,
J. J. L. Morton
Abstract:
Noisy intermediate-scale quantum (NISQ) devices seek to achieve quantum advantage over classical systems without the use of full quantum error correction. We propose a NISQ processor architecture using a qubit `pipeline' in which all run-time control is applied globally, reducing the required number and complexity of control and interconnect resources. This is achieved by progressing qubit states…
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Noisy intermediate-scale quantum (NISQ) devices seek to achieve quantum advantage over classical systems without the use of full quantum error correction. We propose a NISQ processor architecture using a qubit `pipeline' in which all run-time control is applied globally, reducing the required number and complexity of control and interconnect resources. This is achieved by progressing qubit states through a layered physical array of structures which realise single and two-qubit gates. Such an approach lends itself to NISQ applications such as variational quantum eigensolvers which require numerous repetitions of the same calculation, or small variations thereof. In exchange for simplifying run-time control, a larger number of physical structures is required for shuttling the qubits as the circuit depth now corresponds to an array of physical structures. However, qubit states can be `pipelined' densely through the arrays for repeated runs to make more efficient use of physical resources. We describe how the qubit pipeline can be implemented in a silicon spin-qubit platform, to which it is well suited to due to the high qubit density and scalability. In this implementation, we describe the physical realisation of single and two qubit gates which represent a universal gate set that can achieve fidelities of $\mathcal{F} \geq 0.9999$, even under typical qubit frequency variations.
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Submitted 13 June, 2023;
originally announced June 2023.
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An elongated quantum dot as a distributed charge sensor
Authors:
S. M. Patomäki,
J. Williams,
F. Berritta,
C. Laine,
M. A. Fogarty,
R. C. C. Leon,
J. Jussot,
S. Kubicek,
A. Chatterjee,
B. Govoreanu,
F. Kuemmeth,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separate…
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Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separated by an elongated quantum dot (340 nm long, 50 nm wide). We monitor charge transitions of the elongated quantum dot by measuring radiofrequency single-electron currents to a reservoir to which we connect a lumped-element resonator. We operate the dot as a single electron box to achieve charge sensing of remote quantum dots in each array, separated by a distance of 510 nm. Simultaneous charge detection on both ends of the elongated dot demonstrates that the charge is well distributed across its nominal length, supported by the simulated quantum-mechanical electron density. Our results illustrate how single-electron boxes can be realised with versatile foot- prints that may enable novel and compact quantum processor layouts, offering distributed charge sensing in addition to the possibility of mediated coupling.
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Submitted 4 January, 2023;
originally announced January 2023.
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Silicon edge-dot architecture for quantum computing with global control and integrated trimming
Authors:
Michael A. Fogarty
Abstract:
A scalable quantum information processing architecture based on silicon metal-oxide-semiconductor technology is presented, combining quantum hardware elements from planar and 3D silicon-on-insulator technologies. This architecture is expressed in the ``unit cell'' approach, where tiling cells in two dimensions and allowing inter-cellular nearest-neighbour interactions makes the architecture compat…
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A scalable quantum information processing architecture based on silicon metal-oxide-semiconductor technology is presented, combining quantum hardware elements from planar and 3D silicon-on-insulator technologies. This architecture is expressed in the ``unit cell'' approach, where tiling cells in two dimensions and allowing inter-cellular nearest-neighbour interactions makes the architecture compatible with the surface code for fault tolerant quantum computation. The architecture utilises global control methods, substantially reducing processor complexity with scale: Single-qubit control is achieved using globally applied spin-resonance techniques and two-qubit interactions are mediated by large quantum dots. Further, a solution to device variation is proposed through integration of electronics for individual trimming of quantum dot voltage references. Such a combined set of solutions addresses several major barriers to scaling quantum machines within completely silicon based architectures.
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Submitted 19 August, 2022;
originally announced August 2022.
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Fast high-fidelity single-shot readout of spins in silicon using a single-electron box
Authors:
G. A. Oakes,
V. N. Ciriano-Tejel,
D. Wise,
M. A. Fogarty,
T. Lundberg,
C. Lainé,
S. Schaal,
F. Martins,
D. J. Ibberson,
L. Hutin,
B. Bertrand,
N. Stelmashenko,
J. A. W. Robinson,
L. Ibberson,
A. Hashim,
I. Siddiqi,
A. Lee,
M. Vinet,
C. G. Smith,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we…
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Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 $μ$s. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors.
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Submitted 13 March, 2022;
originally announced March 2022.
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Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
Authors:
**gyu Duan,
Janne S. Lehtinen,
Michael A. Fogarty,
Simon Schaal,
Michelle Lam,
Alberto Ronzani,
Andrey Shchepetov,
Panu Koppinen,
Mika Prunnila,
Fernando Gonzalez-Zalba,
John J. L. Morton
Abstract:
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to dem…
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We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $μ$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon.
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Submitted 29 September, 2020;
originally announced September 2020.
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Remote capacitive sensing in two-dimension quantum-dot arrays
Authors:
**gyu Duan,
Michael A. Fogarty,
James Williams,
Louis Hutin,
Maud Vinet,
John J. L. Morton
Abstract:
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots w…
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We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 2$\times$2 array, and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, 'floating' electrodes. With one quantum dot operating as a single-electron-box sensor, the floating gate serves to enhance the charge sensitivity range, enabling it to detect charge state transitions in a separate silicon nanowire. By comparing measurements from multiple devices we illustrate the impact of the floating gate by quantifying both the charge sensitivity decay as a function of dot-sensor separation and configuration within the dual-nanowire structure.
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Submitted 9 September, 2020; v1 submitted 29 May, 2020;
originally announced May 2020.
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Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
Authors:
V. N. Ciriano-Tejel,
M. A. Fogarty,
S. Schaal,
L. Hutin,
B. Bertrand,
Lisa Ibberson,
M. F. Gonzalez-Zalba,
J. Li,
Y. -M. Niquet,
M. Vinet,
J. J. L. Morton
Abstract:
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, w…
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Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum dot charge sensor, measured using radiofrequency gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited state spectroscopy, and measure a maximum electron spin relaxation time ($T_1$) of $9 \pm 3$ s at 1 Tesla. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures.
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Submitted 12 June, 2020; v1 submitted 15 May, 2020;
originally announced May 2020.
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A Silicon Surface Code Architecture Resilient Against Leakage Errors
Authors:
Zhenyu Cai,
Michael A. Fogarty,
Simon Schaal,
Sofia Patomaki,
Simon C. Benjamin,
John J. L. Morton
Abstract:
Spin qubits in silicon quantum dots are one of the most promising building blocks for large scale quantum computers thanks to their high qubit density and compatibility with the existing semiconductor technologies. High fidelity single-qubit gates exceeding the threshold of error correction codes like the surface code have been demonstrated, while two-qubit gates have reached 98\% fidelity and are…
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Spin qubits in silicon quantum dots are one of the most promising building blocks for large scale quantum computers thanks to their high qubit density and compatibility with the existing semiconductor technologies. High fidelity single-qubit gates exceeding the threshold of error correction codes like the surface code have been demonstrated, while two-qubit gates have reached 98\% fidelity and are improving rapidly. However, there are other types of error --- such as charge leakage and propagation --- that may occur in quantum dot arrays and which cannot be corrected by quantum error correction codes, making them potentially damaging even when their probability is small. We propose a surface code architecture for silicon quantum dot spin qubits that is robust against leakage errors by incorporating multi-electron mediator dots. Charge leakage in the qubit dots is transferred to the mediator dots via charge relaxation processes and then removed using charge reservoirs attached to the mediators. A stabiliser-check cycle, optimised for our hardware, then removes the correlations between the residual physical errors. Through simulations we obtain the surface code threshold for the charge leakage errors and show that in our architecture the damage due to charge leakage errors is reduced to a similar level to that of the usual depolarising gate noise. Spin leakage errors in our architecture are constrained to only ancilla qubits and can be removed during quantum error correction via reinitialisations of ancillae, which ensure the robustness of our architecture against spin leakage as well. Our use of an elongated mediator dots creates spaces throughout the quantum dot array for charge reservoirs, measuring devices and control gates, providing the scalability in the design.
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Submitted 2 December, 2019; v1 submitted 23 April, 2019;
originally announced April 2019.
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Fidelity benchmarks for two-qubit gates in silicon
Authors:
W. Huang,
C. H. Yang,
K. W. Chan,
T. Tanttu,
B. Hensen,
R. C. C. Leon,
M. A. Fogarty,
J. C. C. Hwang,
F. E. Hudson,
K. M. Itoh,
A. Morello,
A. Laucht,
A. S. Dzurak
Abstract:
Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations. While a variety of qubit systems have shown high fidelities at the one-qubit level, superconductor technologies have been the only solid-state qubits manufactured via s…
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Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations. While a variety of qubit systems have shown high fidelities at the one-qubit level, superconductor technologies have been the only solid-state qubits manufactured via standard lithographic techniques which have demonstrated two-qubit fidelities near the fault-tolerant threshold. Silicon-based quantum dot qubits are also amenable to large-scale manufacture and can achieve high single-qubit gate fidelities (exceeding 99.9%) using isotopically enriched silicon. However, while two-qubit gates have been demonstrated in silicon, it has not yet been possible to rigorously assess their fidelities using randomized benchmarking, since this requires sequences of significant numbers of qubit operations ($\gtrsim 20$) to be completed with non-vanishing fidelity. Here, for qubits encoded on the electron spin states of gate-defined quantum dots, we demonstrate Bell state tomography with fidelities ranging from 80% to 89%, and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7% and average Controlled-ROT (CROT) fidelity of 98.0%. These fidelities are found to be limited by the relatively slow gate times employed here compared with the decoherence times $T_2^*$ of the qubits. Silicon qubit designs employing fast gate operations based on high Rabi frequencies, together with advanced pulsing techniques, should therefore enable significantly higher fidelities in the near future.
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Submitted 26 July, 2018; v1 submitted 14 May, 2018;
originally announced May 2018.
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Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
Authors:
M. A. Fogarty,
K. W. Chan,
B. Hensen,
W. Huang,
T. Tanttu,
C. H. Yang,
A. Laucht,
M. Veldhorst,
F. E. Hudson,
K. M. Itoh,
D. Culcer,
A. Morello,
A. S. Dzurak
Abstract:
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using $^{28}$Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent…
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Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using $^{28}$Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet-triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.
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Submitted 5 December, 2017; v1 submitted 11 August, 2017;
originally announced August 2017.
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Impact of g-factors and valleys on spin qubits in a silicon double quantum dot
Authors:
J. C. C. Hwang,
C. H. Yang,
M. Veldhorst,
N. Hendrickx,
M. A. Fogarty,
W. Huang,
F. E. Hudson,
A. Morello,
A. S. Dzurak
Abstract:
We define single electron spin qubits in a silicon MOS double quantum dot system. By map** the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an inter-valley spin-orbit coupling. We fit the data from which we extract an inter-valley coupling strength of 43 MHz. In addition, we observe a narrow resonance near th…
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We define single electron spin qubits in a silicon MOS double quantum dot system. By map** the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an inter-valley spin-orbit coupling. We fit the data from which we extract an inter-valley coupling strength of 43 MHz. In addition, we observe a narrow resonance near the primary qubit resonance when we operate the device in the (1,1) charge configuration. The experimental data is consistent with a simulation involving two weakly exchanged-coupled spins with a g-factor difference of 1 MHz, of the same order as the Rabi frequency. We conclude that the narrow resonance is the result of driven transitions between the T- and T+ triplet states, using an ESR signal of frequency located halfway between the resonance frequencies of the two individual spins. The findings presented here offer an alternative method of implementing two-qubit gates, of relevance to the operation of larger scale spin qubit systems.
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Submitted 26 February, 2017; v1 submitted 27 August, 2016;
originally announced August 2016.
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A logical qubit in a linear array of semiconductor quantum dots
Authors:
Cody Jones,
Michael A. Fogarty,
Andrea Morello,
Mark F. Gyure,
Andrew S. Dzurak,
Thaddeus D. Ladd
Abstract:
We design and analyze a logical qubit composed of a linear array of electron spins in semiconductor quantum dots. To avoid the difficulty of fully controlling a two-dimensional array of dots, we adapt spin control and error correction to a one-dimensional line of silicon quantum dots. Control speed and efficiency are maintained via a scheme in which electron spin states are controlled globally usi…
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We design and analyze a logical qubit composed of a linear array of electron spins in semiconductor quantum dots. To avoid the difficulty of fully controlling a two-dimensional array of dots, we adapt spin control and error correction to a one-dimensional line of silicon quantum dots. Control speed and efficiency are maintained via a scheme in which electron spin states are controlled globally using broadband microwave pulses for magnetic resonance while two-qubit gates are provided by local electrical control of the exchange interaction between neighboring dots. Error correction with two-, three-, and four-qubit codes is adapted to a linear chain of qubits with nearest-neighbor gates. We estimate an error correction threshold of 1e-4. Furthermore, we describe a sequence of experiments to validate the methods on near-term devices starting from four coupled dots.
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Submitted 28 February, 2017; v1 submitted 22 August, 2016;
originally announced August 2016.
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Non-exponential Fidelity Decay in Randomized Benchmarking with Low-Frequency Noise
Authors:
M. A. Fogarty,
M. Veldhorst,
R. Harper,
C. H. Yang,
S. D. Bartlett,
S. T. Flammia,
A. S. Dzurak
Abstract:
We show that non-exponential fidelity decays in randomized benchmarking experiments on quantum dot qubits are consistent with numerical simulations that incorporate low-frequency noise. By expanding standard randomized benchmarking analysis to this experimental regime, we find that such non-exponential decays are better modeled by multiple exponential decay rates, leading to an instantaneous contr…
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We show that non-exponential fidelity decays in randomized benchmarking experiments on quantum dot qubits are consistent with numerical simulations that incorporate low-frequency noise. By expanding standard randomized benchmarking analysis to this experimental regime, we find that such non-exponential decays are better modeled by multiple exponential decay rates, leading to an instantaneous control fidelity for isotopically-purified-silicon MOS quantum dot qubits which can be as high as 99.9% when low-frequency noise conditions and system calibrations are favorable. These advances in qubit characterization and validation methods underpin the considerable prospects for silicon as a qubit platform for fault-tolerant quantum computation.
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Submitted 22 February, 2015; v1 submitted 18 February, 2015;
originally announced February 2015.
