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Performance Assessment of Universal Machine Learning Interatomic Potentials: Challenges and Directions for Materials' Surfaces
Authors:
Bruno Focassio,
Luis Paulo Mezzina Freitas,
Gabriel R. Schleder
Abstract:
Machine learning interatomic potentials (MLIPs) are one of the main techniques in the materials science toolbox, able to bridge ab initio accuracy with the computational efficiency of classical force fields. This allows simulations ranging from atoms, molecules, and biosystems, to solid and bulk materials, surfaces, nanomaterials, and their interfaces and complex interactions. A recent class of ad…
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Machine learning interatomic potentials (MLIPs) are one of the main techniques in the materials science toolbox, able to bridge ab initio accuracy with the computational efficiency of classical force fields. This allows simulations ranging from atoms, molecules, and biosystems, to solid and bulk materials, surfaces, nanomaterials, and their interfaces and complex interactions. A recent class of advanced MLIPs, which use equivariant representations and deep graph neural networks, is known as universal models. These models are proposed as foundational models suitable for any system, covering most elements from the periodic table. Current universal MLIPs (UIPs) have been trained with the largest consistent dataset available nowadays. However, these are composed mostly of bulk materials' DFT calculations. In this article, we assess the universality of all openly available UIPs, namely MACE, CHGNet, and M3GNet, in a representative task of generalization: calculation of surface energies. We find that the out-of-the-box foundational models have significant shortcomings in this task, with errors correlated to the total energy of surface simulations, having an out-of-domain distance from the training dataset. Our results show that while UIPs are an efficient starting point for fine-tuning specialized models, we envision the potential of increasing the coverage of the materials space towards universal training datasets for MLIPs.
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Submitted 30 May, 2024; v1 submitted 6 March, 2024;
originally announced March 2024.
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Magnetic control of Weyl nodes and wave packets in three-dimensional warped semimetals
Authors:
Bruno Focassio,
Gabriel R. Schleder,
Adalberto Fazzio,
Rodrigo B. Capaz,
Pedro V. Lopes,
Jaime Ferreira,
Carsten Enderlein,
Marcello B. Silva Neto
Abstract:
We investigate the topological phase transitions driven by band war** and a transverse magnetic field, for three-dimensional Weyl semimetals. First, we use the Chern number as a mathematical tool to derive the topological phase diagram. Next, we associate each of the topological sectors to a given angular momentum state of a rotating wave packet. Then we show how the position of the Weyl nodes c…
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We investigate the topological phase transitions driven by band war** and a transverse magnetic field, for three-dimensional Weyl semimetals. First, we use the Chern number as a mathematical tool to derive the topological phase diagram. Next, we associate each of the topological sectors to a given angular momentum state of a rotating wave packet. Then we show how the position of the Weyl nodes can be manipulated by a transverse external magnetic field that ultimately quenches the wave packet rotation, first partially and then completely, thus resulting in a sequence of field-induced topological phase transitions. Finally, we calculate the current-induced magnetization and the anomalous Hall conductivity of a prototypical warped Weyl material. Both observables reflect the topological transitions associated with the wave packet rotation and can help to identify the elusive 3D quantum anomalous Hall effect in three-dimensional, warped Weyl materials.
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Submitted 11 January, 2024;
originally announced January 2024.
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Linear Jacobi-Legendre expansion of the charge density for machine learning-accelerated electronic structure calculations
Authors:
Bruno Focassio,
Michelangelo Domina,
Urvesh Patil,
Adalberto Fazzio,
Stefano Sanvito
Abstract:
Kohn-Sham density functional theory (KS-DFT) is a powerful method to obtain key materials' properties, but the iterative solution of the KS equations is a numerically intensive task, which limits its application to complex systems. To address this issue, machine learning (ML) models can be used as surrogates to find the ground-state charge density and reduce the computational overheads. We develop…
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Kohn-Sham density functional theory (KS-DFT) is a powerful method to obtain key materials' properties, but the iterative solution of the KS equations is a numerically intensive task, which limits its application to complex systems. To address this issue, machine learning (ML) models can be used as surrogates to find the ground-state charge density and reduce the computational overheads. We develop a grid-centred structural representation, based on Jacobi and Legendre polynomials combined with a linear regression, to accurately learn the converged DFT charge density. This integrates into a ML pipeline that can return any density-dependent observable, including energy and forces, at the quality of a converged DFT calculation, but at a fraction of the computational cost. Fast scanning of energy landscapes and producing starting densities for the DFT self-consistent cycle are among the applications of our scheme.
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Submitted 25 May, 2023; v1 submitted 31 January, 2023;
originally announced January 2023.
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Topological insulating phase arising in transition metal dichalcogenide alloy
Authors:
F. Crasto de Lima,
B. Focassio,
R. H. Miwa,
A. Fazzio
Abstract:
Transition metal dichalcogenides have been the subject of numerous studies addressing technological applications and fundamental issues. Single-layer PtSe2 is a semiconductor with a trivial bandgap, in contrast, its counterpart with 25% of Se atoms substituted by Hg, Pt2HgSe3 (jacutingaite, a naturally occurring mineral), is a 2D topological insulator with a large bandgap. Based on ab-initio calcu…
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Transition metal dichalcogenides have been the subject of numerous studies addressing technological applications and fundamental issues. Single-layer PtSe2 is a semiconductor with a trivial bandgap, in contrast, its counterpart with 25% of Se atoms substituted by Hg, Pt2HgSe3 (jacutingaite, a naturally occurring mineral), is a 2D topological insulator with a large bandgap. Based on ab-initio calculations, we investigate the energetic stability, and the topological transition in Pt(HgxSe1-x)2 as a function of alloy concentration, and the distribution of Hg atoms embedded in the PtSe2 host. Our findings reveal the dependence of the topological phase with respect to the alloy concentration and robustness with respect distribution of Hg. Through a combination of our ab-initio results and a defect wave function percolation model, we estimate the random alloy concentration threshold for the topological transition to be only 9%. Our results expand the possible search for non-trivial topological phases in random alloy systems.
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Submitted 12 December, 2022;
originally announced December 2022.
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Connecting Higher-Order Topology with the Orbital Hall Effect in Monolayers of Transition Metal Dichalcogenides
Authors:
Marcio Costa,
Bruno Focassio,
Tarik P. Cysne,
Luis M. Canonico,
Gabriel R. Schleder,
Roberto B. Muniz,
Adalberto Fazzio,
Tatiana G. Rappoport
Abstract:
Monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase have been recently classified as higher-order topological insulators (HOTI), protected by $C_3$ rotation symmetry. In addition, theoretical calculations show an orbital Hall plateau in the insulating gap of TMDs, characterized by an orbital Chern number. We explore the correlation between these two phenomena in TMD mo…
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Monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase have been recently classified as higher-order topological insulators (HOTI), protected by $C_3$ rotation symmetry. In addition, theoretical calculations show an orbital Hall plateau in the insulating gap of TMDs, characterized by an orbital Chern number. We explore the correlation between these two phenomena in TMD monolayers in two structural phases: the noncentrosymmetric 2H and the centrosymmetric 1T. Using density functional theory, we confirm the characteristics of 2H-TMDs and reveal that 1T-TMDs are identified by a $\mathbb{Z}_4$ topological invariant. As a result, when cut along appropriate directions, they host conducting edge-states, which cross their bulk energy-band gaps and can transport orbital angular momentum. Our linear response calculations thus indicate that the HOTI phase is accompanied by an orbital Hall effect. Using general symmetry arguments, we establish a connection between the two phenomena with potential implications for spin-orbitronics.
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Submitted 6 March, 2023; v1 submitted 2 May, 2022;
originally announced May 2022.
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Amorphous Bi$_2$Se$_3$ structural, electronic, and topological nature by first-principles
Authors:
Bruno Focassio,
Gabriel R. Schleder,
F. Crasto de Lima,
Caio Lewenkopf,
Adalberto Fazzio
Abstract:
Crystalline $\rm Bi_2Se_3$ is one of the most explored three-dimensional topological insulator, with a $0.3\;\rm eV$ energy gap making it promising for applications. Its amorphous counterpart could bring to light new possibilities for large scale synthesis and applications. Using ab initio molecular dynamics simulations, we have studied realistic amorphous $\rm Bi_2Se_3$ phases generated by differ…
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Crystalline $\rm Bi_2Se_3$ is one of the most explored three-dimensional topological insulator, with a $0.3\;\rm eV$ energy gap making it promising for applications. Its amorphous counterpart could bring to light new possibilities for large scale synthesis and applications. Using ab initio molecular dynamics simulations, we have studied realistic amorphous $\rm Bi_2Se_3$ phases generated by different processes of melting, quenching, and annealing. Extensive structural and electronic characterizations show that the melting process induces an energy gap decrease ruled by growth of the defective local environments. This behavior dictates a weak stability of the topological phase to disorder, characterized by the spin Bott index. Interestingly, we identify the occurrence of topologically trivial surface states in amorphous $\rm Bi_2Se_3$ that show a strong resemblance with standard helical topological states. Our results and methods advance the search of topological phases in three-dimensional amorphous solids.
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Submitted 13 December, 2021; v1 submitted 22 September, 2021;
originally announced September 2021.
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Machine learning for materials discovery: two-dimensional topological insulators
Authors:
Gabriel R. Schleder,
Bruno Focassio,
Adalberto Fazzio
Abstract:
One of the main goals and challenges of materials discovery is to find the best candidates for each interest property or application. Machine learning rises in this context to efficiently optimize this search, exploring the immense materials space, consisting of simultaneously the atomic, compositional, and structural spaces. Topological insulators, presenting symmetry-protected metallic edge stat…
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One of the main goals and challenges of materials discovery is to find the best candidates for each interest property or application. Machine learning rises in this context to efficiently optimize this search, exploring the immense materials space, consisting of simultaneously the atomic, compositional, and structural spaces. Topological insulators, presenting symmetry-protected metallic edge states, are a promising class of materials for different applications. However, further, development is limited by the scarcity of viable candidates. Here we present and discuss machine learning-accelerated strategies for searching the materials space for two-dimensional topological materials. We show the importance of detailed investigations of each machine learning component, leading to different results. Using recently created databases containing thousands of ab initio calculations of 2D materials, we train machine learning models capable of determining the electronic topology of materials, with an accuracy of over 90%. We can then generate and screen thousands of novel materials, efficiently predicting their topological character without the need for a priori structural knowledge. We discover 56 non-trivial materials, of which 17 novel insulating candidates for further investigation, for which we corroborate their topological properties with density functional theory calculations. This strategy is 10$\times$ more efficient than the trial-and-error approach while few orders of magnitude faster and is a proof of concept for guiding improved materials discovery search strategies.
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Submitted 14 July, 2021;
originally announced July 2021.
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Machine learning of microscopic ingredients for graphene oxide/cellulose interaction
Authors:
Romana Petry,
Gustavo Silvestre,
Bruno Focassio,
F. Crasto de Lima,
Roberto H. Miwa,
Adalberto Fazzio
Abstract:
Understanding the role of microscopic attributes in nanocomposites allows for a controlled and, therefore, acceleration in experimental system designs. In this work, we extracted the relevant parameters controlling the graphene oxide binding strength to cellulose by combining first-principles calculations and machine learning algorithms. We were able to classify the systems among two classes with…
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Understanding the role of microscopic attributes in nanocomposites allows for a controlled and, therefore, acceleration in experimental system designs. In this work, we extracted the relevant parameters controlling the graphene oxide binding strength to cellulose by combining first-principles calculations and machine learning algorithms. We were able to classify the systems among two classes with higher and lower binding energies, which are well defined based on the isolated graphene oxide features. By a theoretical X-ray photoelectron spectroscopy analysis, we show the extraction of these relevant features. Additionally, we demonstrate the possibilities of a refined control within a machine learning regression between the binding energy values and the system's characteristics. Our work presents a guiding map to the control graphene oxide/cellulose interaction.
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Submitted 2 July, 2021;
originally announced July 2021.
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Conformational analysis of tannic acid: environment effects in electronic and reactivity properties
Authors:
Romana Petry,
Bruno Focassio,
Gabriel R. Schleder,
Diego S. T. Martinez,
Adalberto Fazzio
Abstract:
Polyphenols are natural molecules of crucial importance in many applications, of which tannic acid (TA) is one of the most abundant and established. Most high-value applications require precise control of TA interactions with the system of interest. However, the molecular structure of TA is still not comprehended at the atomic level, of which all electronic and reactivity properties depend. Here,…
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Polyphenols are natural molecules of crucial importance in many applications, of which tannic acid (TA) is one of the most abundant and established. Most high-value applications require precise control of TA interactions with the system of interest. However, the molecular structure of TA is still not comprehended at the atomic level, of which all electronic and reactivity properties depend. Here, we combine an enhanced sampling global optimization method with density functional theory (DFT)-based calculations to explore the conformational space of TA assisted by unsupervised machine learning visualization, and then investigate its lowest energy conformers. We study the external environment's effect on the TA structure and properties. We find that vacuum favors compact structures by stabilizing peripheral atoms' weak interactions, while in water, the molecule adopts more open conformations. The frontier molecular orbitals of the conformers with lowest harmonic vibrational free energy have a HOMO-LUMO energy gap of 2.21 (3.27) eV, increasing to 2.82 (3.88) eV in water, at the DFT generalized gradient approximation (and hybrid) level of theory. Structural differences also change the distribution of potential reactive sites. We establish the fundamental importance of accurate structural consideration in determining TA and related polyphenols interactions in relevant technological applications.
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Submitted 21 May, 2021;
originally announced May 2021.
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Structural and electronic properties of realistic two-dimensional amorphous topological insulators
Authors:
Bruno Focassio,
Gabriel R. Schleder,
Marcio Costa,
Adalberto Fazzio,
Caio Lewenkopf
Abstract:
We investigate the structure and electronic spectra properties of two-dimensional amorphous bismuthene structures and show that these systems are topological insulators. We employ realistic modeling of amorphous geometries together with density functional theory for electronic structure calculations. We investigate the system topological properties throughout the amorphization process and find tha…
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We investigate the structure and electronic spectra properties of two-dimensional amorphous bismuthene structures and show that these systems are topological insulators. We employ realistic modeling of amorphous geometries together with density functional theory for electronic structure calculations. We investigate the system topological properties throughout the amorphization process and find that the robustness of the topological phase is associated with the spin-orbit coupling strength and size of the pristine topological gap. Using recursive non-equilibrium Green's function, we study the electronic transport properties of nanoribbons devices with lengths comparable to experimentally synthesized materials. We find a $2e^2/h$ conductance plateau within the topological gap and an onset of Anderson localization at the trivial insulator phase.
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Submitted 27 October, 2020;
originally announced October 2020.
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Disorder effects of vacancies on the electronic transport properties of realistic topological insulators nanoribbons: the case of bismuthene
Authors:
Armando Pezo,
Bruno Focassio,
Gabriel R. Schleder,
Marcio Costa,
Caio Lewenkopf,
Adalberto Fazzio
Abstract:
The robustness of topological materials against disorder and defects is presumed but has not been demonstrated explicitly in realistic systems. In this work, we use state-of-the-art density functional theory and recursive nonequilibrium Green's functions methods to study the effect of disorder in the electronic transport of long nanoribbons, up to 157 nm, as a function of vacancy concentration. In…
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The robustness of topological materials against disorder and defects is presumed but has not been demonstrated explicitly in realistic systems. In this work, we use state-of-the-art density functional theory and recursive nonequilibrium Green's functions methods to study the effect of disorder in the electronic transport of long nanoribbons, up to 157 nm, as a function of vacancy concentration. In narrow nanoribbons, even for small vacancy concentrations, defect-like localized states give rise to hybridization between the edge states erasing topological protection and enabling backscattering events. We show that the topological protection is more robust for wide nanoribbons, but surprisingly it breaks down at moderate structural disorder. Our study helps to establish some bounds on defective bismuthene nanoribbons as promising candidates for spintronic applications.
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Submitted 20 January, 2021; v1 submitted 22 October, 2020;
originally announced October 2020.
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Dual Topological Insulator Device with Disorder Robustness
Authors:
Bruno Focassio,
Gabriel R. Schleder,
Armando Pezo,
Marcio Costa,
Adalberto Fazzio
Abstract:
Two-dimensional Na$_3$Bi is a dual topological insulator protected by time-reversal and mirror symmetry, resulting in a promising platform for devices design. However, in reality, the design of topological devices is hindered by a sensitivity against disorder and temperature. We study the topological properties of Na$_3$Bi in the presence of intrinsic defects, investigating the robustness of the e…
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Two-dimensional Na$_3$Bi is a dual topological insulator protected by time-reversal and mirror symmetry, resulting in a promising platform for devices design. However, in reality, the design of topological devices is hindered by a sensitivity against disorder and temperature. We study the topological properties of Na$_3$Bi in the presence of intrinsic defects, investigating the robustness of the edge states and the resulting transport properties. We apply a recursive Green's function technique enabling the study of disordered systems with lengths comparable to experimentally synthesized materials, in the order of micrometers. We combine our findings to propose a topological insulator device, where intrinsic defects are used to filter the response of trivial bulk states. This results in a stable conductance throughout a large range of electronic temperatures, and controllable by a perpendicular electric field. Our proposal is general, enabling the design of various dual topological insulators devices.
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Submitted 22 June, 2020;
originally announced June 2020.