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A first-principles approach to closing the "10-100 eV gap" for charge-carrier thermalization in semiconductors
Authors:
Dallin O. Nielsen,
Chris G. Van de Walle,
Sokrates T. Pantelides,
Ronald D. Schrimpf,
Daniel M. Fleetwood,
Massimo V. Fischetti
Abstract:
The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical models of the nuclear/particle physics community cover thermalization in the high-energy range (kinetic energies exceeding ~100 eV), and the electronic-d…
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The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical models of the nuclear/particle physics community cover thermalization in the high-energy range (kinetic energies exceeding ~100 eV), and the electronic-device community has studied extensively carrier transport in the low-energy range (below ~10 eV). However, the processes that control the energy losses and thermalization of electrons and holes in the intermediate energy range of about 10-100 eV (the "10-100 eV gap") are poorly known. The aim of this research is to close this gap, by utilizing density functional theory (DFT) to obtain the band structure and dielectric function of GaN for energies up to about 100 eV. We also calculate charge-carrier scattering rates for the major charge-carrier interactions (phonon scattering, impact ionization, and plasmon emission), using the DFT results and first-order perturbation theory. With this information, we study the thermalization of electrons starting at 100 eV using the Monte Carlo method to solve the semiclassical Boltzmann transport equation. Full thermalization of electrons and holes is complete within ~1 and 0.5 ps, respectively. Hot electrons dissipate about 90% of their initial kinetic energy to the electron-hole gas (90 eV) during the first ~0.1 fs, due to rapid plasmon emission and impact ionization at high energies. The remaining energy is lost more slowly as phonon emission dominates at lower energies (below ~10 eV). During the thermalization, hot electrons generate pairs with an average energy of ~8.9 eV/pair (11-12 pairs per hot electron). Additionally, during the thermalization, the maximum electron displacement from its original position is found to be on the order of 100 nm.
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Submitted 7 August, 2023;
originally announced August 2023.
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Response of a Commercial 0.25 um Thin-Film Silicon-on-Sapphire CMOS Technology to Total Ionizing Dose
Authors:
Michael P. King,
Datao Gong,
Chonghan Liu,
Tiankuan Liu,
Annie C. Xiang,
**bo Ye,
Ronald D. Schrimpf,
Robert A. Reed,
Michael L. Alles,
Daniel M. Fleetwood
Abstract:
The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change of less than 170 mV and leakage current change of less than 1 nA for individual nMOSFET and pMOSFET devices at a total dose of 100 krad(SiO2). The increase in…
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The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change of less than 170 mV and leakage current change of less than 1 nA for individual nMOSFET and pMOSFET devices at a total dose of 100 krad(SiO2). The increase in power supply current at the circuit level was less than 5%, consistent with the small change in off-state transistor leakage current. The technology exhibits good characteristics for use in the electronics of the ATLAS experiment at the Large Hadron Collider.
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Submitted 11 February, 2022;
originally announced February 2022.
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High Energy Irradiation Effects on Silicon Photonic Passive Devices
Authors:
Yue Zhou,
Dawei Bi,
Songlin Wang,
Longsheng Wu,
Yi Huang,
Enxia Zhang,
Daniel M. Fleetwood,
Aimin Wu
Abstract:
In this work, the radiation responses of silicon photonic passive devices built in silicon-on-insulator (SOI) technology are investigated through high energy neutron and 60Co gamma-ray irradiation. The wavelengths of both micro-ring resonators (MRRs) and Mach-Zehnder interferometers (MZIs) exhibit blue shifts after high-energy neutron irradiation to a fluence of 1*1012 n/cm2; the blue shift is sma…
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In this work, the radiation responses of silicon photonic passive devices built in silicon-on-insulator (SOI) technology are investigated through high energy neutron and 60Co gamma-ray irradiation. The wavelengths of both micro-ring resonators (MRRs) and Mach-Zehnder interferometers (MZIs) exhibit blue shifts after high-energy neutron irradiation to a fluence of 1*1012 n/cm2; the blue shift is smaller in MZI devices than in MRRs due to different waveguide widths. Devices with SiO2 upper cladding layer show strong tolerance to irradiation. Neutron irradiation leads to slight changes in the crystal symmetry in the Si cores of the optical devices and accelerated oxidization for devices without SiO2 cladding. A 2 um top cladding of SiO2 layer significantly improves the radiation tolerance of these passive photonic devices.
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Submitted 29 December, 2021;
originally announced December 2021.
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Proton-Irradiation-Immune Electronics Implemented with Two-Dimensional Charge-Density-Wave Devices
Authors:
A. Geremew,
F. Kargar,
E. X. Zhang,
S. E. Zhao,
E. Aytan,
M. A. Bloodgood,
T. T. Salguero,
S. Rumyantsev,
A. Fedoseyev,
D. M. Fleetwood,
A. A. Balandin
Abstract:
Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction. Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic…
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Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction. Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic protons. Modern electronics based on semiconductors - even those specially designed for radiation hardness - remain highly susceptible to proton damage. Here we demonstrate that room temperature (RT) charge-density-wave (CDW) devices with quasi-two-dimensional (2D) 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 10^14 H+cm^2. Current-voltage I-V characteristics of these 2D CDW devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other 2D devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these "all-metallic" CDW devices can be attributed to their two-terminal design, quasi-2D nature of the active channel, and high concentration of charge carriers in the utilized CDW phases. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments.
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Submitted 2 January, 2019;
originally announced January 2019.
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State-of-the-Art Flash Chips for Dosimetry Applications
Authors:
Preeti Kumari,
Levi Davies,
Narayana P. Bhat,
En Xia Zhang,
Michael W. McCurdy,
Daniel M. Fleetwood,
Biswajit Ray
Abstract:
In this paper we show that state-of-the-art commercial off-the-shelf Flash memory chip technology (20 nm technology node with multi-level cells) is quite sensitive to ionizing radiation. We find that the fail-bit count in these Flash chips starts to increase monotonically with gamma or X-ray dose at 100 rad(SiO2). Significantly more fail bits are observed in X-ray irradiated devices, most likely d…
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In this paper we show that state-of-the-art commercial off-the-shelf Flash memory chip technology (20 nm technology node with multi-level cells) is quite sensitive to ionizing radiation. We find that the fail-bit count in these Flash chips starts to increase monotonically with gamma or X-ray dose at 100 rad(SiO2). Significantly more fail bits are observed in X-ray irradiated devices, most likely due to dose enhancement effects due to high-Z back-end-of-line materials. These results show promise for dosimetry application.
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Submitted 22 September, 2018;
originally announced September 2018.
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Total Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices
Authors:
G. Liu,
E. X. Zhang,
C. D. Liang,
M. A. Bloodgood,
T. T. Salguero,
D. M. Fleetwood,
A. A. Balandin
Abstract:
The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up…
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The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up to 1 Mrad(SiO2). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T-TaS2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T-TaS2, are promising for applications in high radiation environments.
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Submitted 18 October, 2017;
originally announced December 2017.
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Optical Response of Monolayer CdTe/CdS Quantum Dots to X-rays and Gamma-rays
Authors:
Girija Gaur,
Dmitry S. Koktysh,
Daniel M. Fleetwood,
Robert A. Weller,
Robert A. Reed,
Bridget R. Rogers,
Sharon M. Weiss
Abstract:
We investigate the influence of X-ray and gamma-ray irradiation on the photophysical properties of sub-monolayer CdTe/CdS quantum dots (QDs) immobilized in porous silica (PSiO2) scaffolds. The highly luminescent QD-PSiO2 thin films allow for straightforward monitoring of the optical properties of the QDs through continuous wave and time-resolved photoluminescence spectroscopy. The PSiO2 host matri…
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We investigate the influence of X-ray and gamma-ray irradiation on the photophysical properties of sub-monolayer CdTe/CdS quantum dots (QDs) immobilized in porous silica (PSiO2) scaffolds. The highly luminescent QD-PSiO2 thin films allow for straightforward monitoring of the optical properties of the QDs through continuous wave and time-resolved photoluminescence spectroscopy. The PSiO2 host matrix itself does not modify the QD properties. X-ray irradiation of the QD-PSiO2 films in air leads to an exponential decrease in QD emission intensity, an exponential blue-shift in peak emission energy, and substantially faster exciton decay rates with increasing exposure doses from 2.2 Mrad(SiO2) to 6.6 Mrad(SiO2). Gamma-ray irradiation of a QD-PSiO2 thin film at a total exposure dose of 700 krad(SiO2) in a nitrogen environment results in over 80% QD photodarkening but no concurrent blue-shift in peak emission energy due to a lack of photo-oxidative effects. Near-complete and partial reversal of irradiation-induced photodarkening was demonstrated on X-ray and gamma-ray irradiated samples, respectively, through the use of a surface re-passivating solution, suggesting that there are different contributing mechanisms responsible for photodarkening under different irradiation energies. This work contributes to improving the reliability and robustness of QD based heterogeneous devices that are exposed to high risk, high energy environments with the possibility of also develo** QD-based large area, low-cost, re-useable, and flexible optical dosimeters.
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Submitted 21 August, 2015;
originally announced August 2015.
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Interfacial Effects on the Optical Properties of CdTe/CdS Quantum Dots
Authors:
Girija Gaur,
Dmitry S. Koktysh,
Daniel M. Fleetwood,
Robert A. Weller,
Robert A. Reed,
Sharon M. Weiss
Abstract:
Using a combination of continuous wave and time-resolved spectroscopy, we study the effects of interfacial conditions on the radiative lifetimes and photoluminescence intensities of colloidal CdTe/CdS quantum dots (QDs) embedded in a three-dimensional nanostructured silicon (NSi) matrix. The NSi matrix was thermally oxidized under different conditions to change the interfacial oxide thickness. QDs…
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Using a combination of continuous wave and time-resolved spectroscopy, we study the effects of interfacial conditions on the radiative lifetimes and photoluminescence intensities of colloidal CdTe/CdS quantum dots (QDs) embedded in a three-dimensional nanostructured silicon (NSi) matrix. The NSi matrix was thermally oxidized under different conditions to change the interfacial oxide thickness. QDs embedded in a NSi matrix with ~0.5 nm of interfacial oxide exhibited reduced photoluminescence intensity and nearly five times shorter radiative lifetimes (~16 ns) compared to QDs immobilized within completely oxidized, nanostructured silica (NSiO2) frameworks (~78 ns). Optical absorption by the sub-nm oxidized NSi matrix partially lowers QD emission intensities while non-radiative carrier recombination and phonon assisted transitions influenced by defect sites within the oxide and NSi are believed to be the primary factors limiting the QD exciton lifetimes in the heterostructures.
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Submitted 23 April, 2015;
originally announced April 2015.
