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Schrodinger dynamics and Berry phase of undulatory locomotion
Authors:
Alexander E. Cohen,
Alasdair D. Hastewell,
Sreeparna Pradhan,
Steven W. Flavell,
Jorn Dunkel
Abstract:
Spectral mode representations play an essential role in various areas of physics, from quantum mechanics to fluid turbulence, but they are not yet extensively used to characterize and describe the behavioral dynamics of living systems. Here, we show that mode-based linear models inferred from experimental live-imaging data can provide an accurate low-dimensional description of undulatory locomotio…
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Spectral mode representations play an essential role in various areas of physics, from quantum mechanics to fluid turbulence, but they are not yet extensively used to characterize and describe the behavioral dynamics of living systems. Here, we show that mode-based linear models inferred from experimental live-imaging data can provide an accurate low-dimensional description of undulatory locomotion in worms, centipedes, robots, and snakes. By incorporating physical symmetries and known biological constraints into the dynamical model, we find that the shape dynamics are generically governed by Schrodinger equations in mode space. The eigenstates of the effective biophysical Hamiltonians and their adiabatic variations enable the efficient classification and differentiation of locomotion behaviors in natural, simulated, and robotic organisms using Grassmann distances and Berry phases. While our analysis focuses on a widely studied class of biophysical locomotion phenomena, the underlying approach generalizes to other physical or living systems that permit a mode representation subject to geometric shape constraints.
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Submitted 14 April, 2023; v1 submitted 21 May, 2022;
originally announced May 2022.
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Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
Authors:
Ro-Ya Liu,
Meng-Kai Lin,
Peng Chen,
Takeshi Suzuki,
Pip C. J. Clark,
Nathan K. Lewis,
Cephise Cacho,
Emma Springate,
Chia-Seng Chang,
Kozo Okazaki,
Wendy Flavell,
Iwao Matsuda,
Tai-Chang Chiang
Abstract:
Understanding carrier creation and evolution in materials initiated by pulsed optical excitation is central to develo** ultrafast optoelectronics. We demonstrate herein that the dynamic response of a system can be drastically modified when its physical dimension is reduced to the atomic scale, the ultimate limit of device miniaturization. A comparative study of single-layer (SL) tungsten diselen…
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Understanding carrier creation and evolution in materials initiated by pulsed optical excitation is central to develo** ultrafast optoelectronics. We demonstrate herein that the dynamic response of a system can be drastically modified when its physical dimension is reduced to the atomic scale, the ultimate limit of device miniaturization. A comparative study of single-layer (SL) tungsten diselenide(WSe2) relative to bulk WSe2 shows substantial differences in the transient response as measured by time- and angle-resolved photoemission spectroscopy (TRARPES). The conduction-band minimum in bulk WSe2, populated by optical pum**, decays promptly. The corresponding decay for SL WSe2 is much slower and exhibits two time constants. The results indicate the presence of two distinct decay channels in the SL that are correlated with the breaking of space inversion symmetry in the two-dimensional limit. This symmetry breaking lifts the spin degeneracy of the bands, which in turn causes the blockage of decay for one spin channel. The stark contrast between the single layer and the bulk illustrates the basic carrier scattering processes operating at different timescales that can be substantially modified by dimensional and symmetry-reduction effects.
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Submitted 22 December, 2019;
originally announced December 2019.
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Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)"16x2" surfaces
Authors:
N. K. Lewis,
Y. Lassailly,
L. Martinelli,
I. Vobornik,
J. Fujii,
C. Bigi,
E. Brunkow,
N. B. Clayburn,
T. J. Gay,
W. R. Flavell,
E. A. Seddon
Abstract:
The electronic structure of Si(110)"16 x 2" double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures of 77 K and 300 K. Angle-resolved photoemission was conducted using horizontally- and vertically-polarised 60 eV and 80 eV photons. Band-dispersion maps revealed four surface states ($S_1$ to $S_4$) which were assigne…
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The electronic structure of Si(110)"16 x 2" double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures of 77 K and 300 K. Angle-resolved photoemission was conducted using horizontally- and vertically-polarised 60 eV and 80 eV photons. Band-dispersion maps revealed four surface states ($S_1$ to $S_4$) which were assigned to silicon dangling bonds on the basis of measured binding energies and photoemission intensity changes between horizontal and vertical light polarisations. Three surface states ($S_1$, $S_2$ and $S_4$), observed in the Si(110)"16 x 2" reconstruction, were assigned to Si adatoms and Si atoms present at the edges of the corrugated terrace structure. Only one of the four surface states, $S_3$, was observed in both the Si(110)"16 x 2" and 1 x 1 band maps and consequently attributed to the pervasive Si zigzag chains that are components of both the Si(110)"16 x 2" and 1 x 1 surfaces. A state in the bulk-band region was attributed to an in-plane bond. All data were consistent with the adatom-buckling model of the Si(110)"16 x 2" surface. Whilst room temperature measurements of $P_y$ and $P_z$ were statistically compatible with zero, $P_x$ measurements of the enantiomorphic A-type and B-type Si(110)"16 x 2" surfaces gave small average polarisations of around 1.5\% that were opposite in sign. Further measurements at 77 K on A-type Si(110)"16 x 2" surface gave a smaller value of +0.3\%. An upper limit of $\sim1\%$ may thus be taken for the longitudinal polarisation.
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Submitted 8 August, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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On the Origin of the Two-Dimensional Electron Gas at the CdO (100) Surface
Authors:
Pip C. J. Clark,
Andrew I. Williamson,
Nathan K. Lewis,
Ruben Ahumada-Lazo,
Mathieu Silly,
James J. Mudd,
Chris F. McConville,
Wendy R. Flavell
Abstract:
Synchrotron-radiation angle-resolved and core-level photoemission spectroscopy are used together to investigate the origin of the two-dimensional electron gas on the surface of single crystal CdO (100) films. A reduction in the two-dimensional electron density of the surface state is observed under the synchrotron beam during ARPES, which is shown to be accompanied by a concomitant reduction in th…
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Synchrotron-radiation angle-resolved and core-level photoemission spectroscopy are used together to investigate the origin of the two-dimensional electron gas on the surface of single crystal CdO (100) films. A reduction in the two-dimensional electron density of the surface state is observed under the synchrotron beam during ARPES, which is shown to be accompanied by a concomitant reduction in the surface-adsorbed species (monitored through the O 1s core level signal). This shows that surface adsorbates donate electrons into the surface accumulation layer. When the surface is cleaned, the surface conduction band state empties. A surface doped with atomic H is also studied. Here, interstitial H increases the two-dimensional electron density at the surface. This demonstrates that reversible donor do** is possible. The surface band bending profiles, 2D electron densities, and effective masses are calculated from subband dispersion simulations.
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Submitted 21 September, 2018;
originally announced September 2018.
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Domain formation mechanism of the Si(110)"16 x 2" reconstruction
Authors:
N. K. Lewis,
N. B. Clayburn,
E. Brunkow,
T. J. Gay,
Y. Lassailly,
J. Fujii,
I. Vobornik,
W. R. Flavell,
E. A. Seddon
Abstract:
The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain orientation was independent of the heating current direction used to induce the Si(110)"16 x 2" reconstruction. Reciprocal-space lattice models of the reconstruction allowed for the correct identification of the domain or…
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The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain orientation was independent of the heating current direction used to induce the Si(110)"16 x 2" reconstruction. Reciprocal-space lattice models of the reconstruction allowed for the correct identification of the domain orientations in the LEED images and confirm that the reconstruction is 2D-chiral. It is proposed that the domain orientation upon surface reconstruction is determined by the direction of monoatomic steps present on the Si(110) plane. This is in turn determined by the direction at which the surface is polished off-axis from the (110) plane.
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Submitted 12 June, 2018;
originally announced June 2018.
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Spin-orbit effects at chiral surfaces
Authors:
N. K. Lewis,
P. J. Durham,
W. R. Flavell,
E. A. Seddon
Abstract:
Two-dimensional hexagonal and oblique lattices were investigated theoretically with the aim of observing differences in the spin expectation values between chiral and achiral systems. The spinresolved band structures were derived from the energy eigenvalues and eigenfunctions of a Hamiltonian that includes the lattice potential and the spin-orbit interaction. The spin texture of the achiral hexago…
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Two-dimensional hexagonal and oblique lattices were investigated theoretically with the aim of observing differences in the spin expectation values between chiral and achiral systems. The spinresolved band structures were derived from the energy eigenvalues and eigenfunctions of a Hamiltonian that includes the lattice potential and the spin-orbit interaction. The spin texture of the achiral hexagonal system was shown to have two non-zero components of the spin polarisation, whereas all three components were calculated to be non-zero for the chiral system. The longitudinal component, found to be zero in the achiral lattice, was observed to invert between the enantiomorphs of the chiral lattice. A heuristic model was introduced to discern the origin of this inverting spin polarisation by considering the dynamics of an electron in chiral and achiral lattices. This model was further used to demonstrate the change in magnitude of the spin polarisation as a function of the lattice parameters and an electric field perpendicular to the lattice.
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Submitted 12 June, 2018;
originally announced June 2018.
