Showing 1–50 of 139 results for author: Flatte, M E

Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices

Authors: Nicholas J. Harmon, James P. Ashton, Patrick M. Lenahan, Michael E. Flatté

Abstract: Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/SiO$_2$ MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduc… ▽ More Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/SiO$_2$ MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity. △ Less

Submitted 30 November, 2023; originally announced December 2023.

Comments: accepted in Applied Physics Letters. arXiv admin note: substantial text overlap with arXiv:2008.08121

Spin Hall conductivity in Bi$_{1-x}$Sb$_x$ as an experimental test of bulk-boundary correspondence

Authors: Yongxi Ou, Wilson Yanez-Parreño, Yu-sheng Huang, Supriya Ghosh, Cüneyt Şahin, Max Stanley, Sandra Santhosh, Saurav Islam, Anthony Richardella, K. Andre Mkhoyan, Michael E. Flatté, Nitin Samarth

Abstract: Bulk-boundary correspondence is a foundational principle underlying the electronic band structure and physical behavior of topological quantum materials. Although it has been rigorously tested in topological systems where the physical properties involve charge currents, it remains unclear whether bulk-boundary correspondence should also hold for non-conserved spin currents. We study charge-to-spin… ▽ More Bulk-boundary correspondence is a foundational principle underlying the electronic band structure and physical behavior of topological quantum materials. Although it has been rigorously tested in topological systems where the physical properties involve charge currents, it remains unclear whether bulk-boundary correspondence should also hold for non-conserved spin currents. We study charge-to-spin conversion in a canonical topological insulator, Bi$_{1-x}$Sb$_x$, to address this fundamentally unresolved question. We use spin-torque ferromagnetic resonance measurements to accurately probe the charge-to-spin conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$~thin films of high structural quality spanning the entire range of composition, including both trivial and topological band structures, as verified using {\it in vacuo} angle-resolved photoemission spectroscopy. From these measurements, we deduce the effective spin Hall conductivity (SHC) and find excellent agreement with the values predicted by tight-binding calculations for the intrinsic SHC of the bulk bands. These results provide strong evidence that the strong spin-orbit entanglement of bulk states well below the Fermi energy connects directly to the SHC in epitaxial Bi$_{1-x}$Sb$_x$~films interfaced with a metallic ferromagnet. The excellent agreement between theory and experiment points to the generic value of analyses focused entirely on bulk properties, even for topological systems involving non-conserved spin currents. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots

Authors: N. R. S. van Venrooij, A. R. da Cruz, R. S. R. Gajjella, P. M. Koenraad, Craig E. Pryor, Michael E. Flatté

Abstract: We find the single exciton's fine structure splitting (FSS), which splits its degenerate ground state manifold into singlets, nearly vanishes in highly asymmetric quantum dots due to the cancellation of splitting effects with markedly different origin. The dots simulated are those that emerge on top of etch pits through the droplet epitaxy growth process; these etch pit dots break square (… ▽ More We find the single exciton's fine structure splitting (FSS), which splits its degenerate ground state manifold into singlets, nearly vanishes in highly asymmetric quantum dots due to the cancellation of splitting effects with markedly different origin. The dots simulated are those that emerge on top of etch pits through the droplet epitaxy growth process; these etch pit dots break square ($C_{4v}$) spatial symmetry, which has been previously associated with small FSS. Configuration interaction calculations predict a vanishing FSS at a specific finite etch pit displacement from the center of the dot, for a structure far from square symmetry. We thus predict that highly asymmetric quantum dots may still display negligible fine structure splitting, providing new avenues for high-fidelity generation of indistinguishable, polarization entangled photon pairs on demand. △ Less

Submitted 26 September, 2023; originally announced September 2023.

Room Temperature Dynamics of an Optically Addressable Single Spin in Hexagonal Boron Nitride

Authors: Raj N. Patel, Rebecca E. K. Fishman, Tzu-Yung Huang, Jordan A. Gusdorff, David A. Fehr, David A. Hopper, S. Alex Breitweiser, Benjamin Porat, Michael E. Flatté, Lee C. Bassett

Abstract: Hexagonal boron nitride (h-BN) hosts pure single-photon emitters that have shown evidence of optically detected electronic spin dynamics. However, the electrical and chemical structure of these optically addressable spins is unknown, and the nature of their spin-optical interactions remains mysterious. Here, we use time-domain optical and microwave experiments to characterize a single emitter in h… ▽ More Hexagonal boron nitride (h-BN) hosts pure single-photon emitters that have shown evidence of optically detected electronic spin dynamics. However, the electrical and chemical structure of these optically addressable spins is unknown, and the nature of their spin-optical interactions remains mysterious. Here, we use time-domain optical and microwave experiments to characterize a single emitter in h-BN exhibiting room temperature optically detected magnetic resonance. Using dynamical simulations, we constrain and quantify transition rates in the model, and we design optical control protocols that optimize the signal-to-noise ratio for spin readout. This constitutes a necessary step towards quantum control of spin states in h-BN. △ Less

Submitted 8 November, 2023; v1 submitted 11 September, 2023; originally announced September 2023.

Comments: 15 pages, 15 figures. Updates in version 2 include modifications to figure 4, an updated estimate for T2*, and minor syntax edits to the main text and supplement for clarity

Implications of the electron-phonon coupling in CuPb$_9$(PO$_4$)$_6$O for superconductivity: an \textit{ab initio} study

Authors: Hari Paudyal, Michael E. Flatté, Durga Paudyal

Abstract: We report $ab~initio$ calculations of the electronic and vibrational properties in CuPb$_9$(PO$_4$)$_6$O, including the electron-phonon coupling strength via strong-coupling Migdal-Eliashberg theory. We verify the presence of appealing flat electronic bands near the Fermi level, a strong hybridization between the Cu $3d$ and O $2p$ states, and soft low-energy phonons, which can suggest high-temper… ▽ More We report $ab~initio$ calculations of the electronic and vibrational properties in CuPb$_9$(PO$_4$)$_6$O, including the electron-phonon coupling strength via strong-coupling Migdal-Eliashberg theory. We verify the presence of appealing flat electronic bands near the Fermi level, a strong hybridization between the Cu $3d$ and O $2p$ states, and soft low-energy phonons, which can suggest high-temperature superconducting behavior. However, the electron-phonon coupling strength appears insufficient to overcome the Coulomb repulsion between an electron pair and thus does does not support high-temperature superconductivity in CuPb$_9$(PO$_4$)$_6$O via the conventional electron-phonon Migdal-Eliashberg mechanism. Even neglecting Coulomb repulsion of the electron pair we find this electron-phonon coupling suggests a superconducting transition temperature less than 2~K. △ Less

Submitted 4 January, 2024; v1 submitted 28 August, 2023; originally announced August 2023.

Comments: 5 pages and 3 figures

Journal ref: Phys. Rev. Mater. 8, L011801 (2024)

Magnon-mediated qubit coupling determined via dissipation measurements

Authors: Masaya Fukami, Jonathan C. Marcks, Denis R. Candido, Leah R. Weiss, Benjamin Soloway, Sean E. Sullivan, Nazar Delegan, F. Joseph Heremans, Michael E. Flatté, David D. Awschalom

Abstract: Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention,… ▽ More Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention, especially for interconnecting isolated spin qubits at length-scales far beyond those set by the dipolar coupling. However, despite extensive theoretical efforts, there is a lack of experimental characterization of the magnon-mediated interaction between NV centers, which is necessary to develop such hybrid quantum architectures. Here, we experimentally determine the magnon-mediated NV-NV coupling from the magnon-induced self-energy of NV centers. Our results are quantitatively consistent with a model in which the NV center is coupled to magnons by dipolar interactions. This work provides a versatile tool to characterize HQSs in the absence of strong coupling, informing future efforts to engineer entangled solid-state systems. △ Less

Submitted 22 August, 2023; originally announced August 2023.

Comments: 14 pages, 4 figures

Journal ref: Proceedings of the National Academy of Sciences 121.2 (2024): e2313754120

Magnon Diffusion Length and Longitudinal Spin Seebeck Effect in Vanadium Tetracyanoethylene (V[TCNE]$_x$, $x \sim 2$)

Authors: Seth W. Kurfman, Denis R. Candido, Brandi Wooten, Yuanhua Zheng, Michael J. Newburger, Shuyu Cheng, Roland K. Kawakami, Joseph P. Heremans, Michael E. Flatté, Ezekiel Johnston-Halperin

Abstract: Spintronic, spin caloritronic, and magnonic phenomena arise from complex interactions between charge, spin, and structural degrees of freedom that are challenging to model and even more difficult to predict. This situation is compounded by the relative scarcity of magnetically-ordered materials with relevant functionality, leaving the field strongly constrained to work with a handful of well-studi… ▽ More Spintronic, spin caloritronic, and magnonic phenomena arise from complex interactions between charge, spin, and structural degrees of freedom that are challenging to model and even more difficult to predict. This situation is compounded by the relative scarcity of magnetically-ordered materials with relevant functionality, leaving the field strongly constrained to work with a handful of well-studied systems that do not encompass the full phase space of phenomenology predicted by fundamental theory. Here we present an important advance in this coupled theory-experiment challenge, wherein we extend existing theories of the spin Seebeck effect (SSE) to explicitly include the temperature-dependence of magnon non-conserving processes. This expanded theory quantitatively describes the low-temperature behavior of SSE signals previously measured in the mainstay material yttrium iron garnet (YIG) and predicts a new regime for magnonic and spintronic materials that have low saturation magnetization, $M_S$, and ultra-low dam**. Finally, we validate this prediction by directly observing the spin Seebeck resistance (SSR) in the molecule-based ferrimagnetic semiconductor vanadium tetracyanoethylene (V[TCNE]$_x$, $x \sim 2$). These results validate the expanded theory, yielding SSR signals comparable in magnitude to YIG and extracted magnon diffusion length ($λ_m>1$ $μ$ m) and magnon lifetime for V[TCNE]$_x$ ($τ_{th}\approx 1-10$ $μ$ s) exceeding YIG ($τ_{th}\sim 10$ ns). Surprisingly, these properties persist to room temperature despite relatively low spin wave stiffness (exchange). This identification of a new regime for highly efficient SSE-active materials opens the door to a new class of magnetic materials for spintronic and magnonic applications. △ Less

Submitted 18 August, 2023; originally announced August 2023.

$\textit{In situ}$ electric-field control of ferromagnetic resonance in the low-loss organic-based ferrimagnet V[TCNE]$_{x\sim 2}$

Authors: Seth W. Kurfman, Andrew Franson, Piyush Shah, Yueguang Shi, Hil Fung Harry Cheung, Katherine E. Nygren, Mitchell Swyt, Kristen S. Buchanan, Gregory D. Fuchs, Michael E. Flatté, Gopalan Srinivasan, Michael Page, Ezekiel Johnston-Halperin

Abstract: We demonstrate indirect electric-field control of ferromagnetic resonance (FMR) in devices that integrate the low-loss, molecule-based, room-temperature ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_{x \sim 2}$) mechanically coupled to PMN-PT piezoelectric transducers. Upon straining the V[TCNE]$_x$ films, the FMR frequency is tuned by more than 6 times the resonant linewidth with no change in… ▽ More We demonstrate indirect electric-field control of ferromagnetic resonance (FMR) in devices that integrate the low-loss, molecule-based, room-temperature ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_{x \sim 2}$) mechanically coupled to PMN-PT piezoelectric transducers. Upon straining the V[TCNE]$_x$ films, the FMR frequency is tuned by more than 6 times the resonant linewidth with no change in Gilbert dam** for samples with $α= 6.5 \times 10^{-5}$. We show this tuning effect is due to a strain-dependent magnetic anisotropy in the films and find the magnetoelastic coefficient $|λ_S| \sim (1 - 4.4)$ ppm, backed by theoretical predictions from DFT calculations and magnetoelastic theory. Noting the rapidly expanding application space for strain-tuned FMR, we define a new metric for magnetostrictive materials, $\textit{magnetostrictive agility}$, given by the ratio of the magnetoelastic coefficient to the FMR linewidth. This agility allows for a direct comparison between magnetostrictive materials in terms of their comparative efficacy for magnetoelectric applications requiring ultra-low loss magnetic resonance modulated by strain. With this metric, we show V[TCNE]$_x$ is competitive with other magnetostrictive materials including YIG and Terfenol-D. This combination of ultra-narrow linewidth and magnetostriction in a system that can be directly integrated into functional devices without requiring heterogeneous integration in a thin-film geometry promises unprecedented functionality for electric-field tuned microwave devices ranging from low-power, compact filters and circulators to emerging applications in quantum information science and technology. △ Less

Submitted 7 August, 2023; originally announced August 2023.

Distinguishing erbium dopants in Y$_2$O$_3$ by site symmetry: \textit{ ab initio} theory of two spin-photon interfaces

Authors: Churna Bhandari, Cüneyt Şahin, Durga Paudyal, Michael E. Flatté

Abstract: We present a first-principles study of defect formation and electronic structure of erbium (Er)-doped yttria (Y$_2$O$_3$). This is an emerging material for spin-photon interfaces in quantum information science due to the narrow linewidth optical emission from Er dopants at standard telecommunication wavelengths and their potential for quantum memories and transducers. We calculate formation energi… ▽ More We present a first-principles study of defect formation and electronic structure of erbium (Er)-doped yttria (Y$_2$O$_3$). This is an emerging material for spin-photon interfaces in quantum information science due to the narrow linewidth optical emission from Er dopants at standard telecommunication wavelengths and their potential for quantum memories and transducers. We calculate formation energies of neutral, negatively, and positively charged Er dopants and find the charge neutral configuration to be the most stable, consistent with experiment. Of the two substitutional sites of Er for Y, the $C_2$ (more relevant for quantum memories) and $C_{3i}$ (more relevant for quantum transduction), we identify the former as possessing the lowest formation energy. The electronic properties are calculated using the Perdew-Burke-Ernzerhof (PBE) functional along with the Hubbard $U$ parameter and spin-orbit coupling (SOC), which yields a $\sim$ 6 $μ_B$ orbital and a $\sim$ 3 $μ_B$ spin magnetic moment, and 11 electrons in the Er $4f$ shell, confirming the formation of charge-neutral Er$^{3+}$. This standard density functional theory (DFT) approach underestimates the band gap of the host and lacks a first-principles justification for $U$. To overcome these issues, we performed screened hybrid functional (HSE) calculations, including a negative $U$ for the $4f$ orbitals, with mixing ($α$) and screening ($w$) parameters. These produced robust electronic features with slight modifications in the band gap and the $4f$ splittings depending on the choice of tuning parameters. We also computed the many-particle electronic excitation energies and compared them with experimental values from photoluminescence. △ Less

Submitted 30 November, 2023; v1 submitted 25 May, 2023; originally announced May 2023.

Comments: 9 pages, 6 figures

Engineering Spin Coherence in Core-Shell Diamond Nanocrystals

Authors: Uri Zvi, Denis R. Candido, Adam Weiss, Aidan R. Jones, Lingjie Chen, Iryna Golovina, Xiaofei Yu, Stella Wang, Dmitri V. Talapin, Michael E. Flatté, Aaron P. Esser-Kahn, Peter C. Maurer

Abstract: Diamond nanocrystals can harbor spin qubit sensors capable of probing the physical properties of biological systems with nanoscale spatial resolution. These diamond nanosensors can readily be delivered into intact cells and even living organisms. However, applications beyond current proof-of-principle experiments require a substantial increase in sensitivity, which is generally limited by surface-… ▽ More Diamond nanocrystals can harbor spin qubit sensors capable of probing the physical properties of biological systems with nanoscale spatial resolution. These diamond nanosensors can readily be delivered into intact cells and even living organisms. However, applications beyond current proof-of-principle experiments require a substantial increase in sensitivity, which is generally limited by surface-noise-induced spin dephasing and relaxation. In this work, we significantly reduce magnetic surface noise by engineering core-shell structures, which in combination with dynamical decoupling result in qubit coherence times (T2) ranging from 52us to 87us - a drastic improvement over the 1.1us to 35us seen in bare particles. This improvement in spin coherence, combined with an overall increase in particle fluorescence, corresponds to a two-order-of-magnitude reduction in integration time. Probing qubit dynamics at a single particle level, furthermore, reveals that the noise characteristics fundamentally change from a bath with spins that rearrange their spatial configuration during the course of an experiment to a more dilute static bath. The observed results shed light on the underlying mechanisms governing spin dephasing in diamond nanocrystals and offer an effective noise mitigation strategy based on engineered core-shell structures. △ Less

Submitted 4 May, 2023; originally announced May 2023.

Comments: Main text 10 pages 4 main figures and 10 extended data figures

Interplay between charge and spin noise in the near-surface theory of decoherence and relaxation of $C_{3v}$ symmetry qutrit spin-1 centers

Authors: Denis R. Candido, Michael E. Flatté

Abstract: Decoherence and relaxation of solid-state defect qutrits near a crystal surface, where they are commonly used as quantum sensors, originates from charge and magnetic field noise. A complete theory requires a formalism for decoherence and relaxation that includes all Hamiltonian terms allowed by the defect's point-group symmetry. This formalism, presented here for the $C_{3v}$ symmetry of a spin-1… ▽ More Decoherence and relaxation of solid-state defect qutrits near a crystal surface, where they are commonly used as quantum sensors, originates from charge and magnetic field noise. A complete theory requires a formalism for decoherence and relaxation that includes all Hamiltonian terms allowed by the defect's point-group symmetry. This formalism, presented here for the $C_{3v}$ symmetry of a spin-1 defect in a diamond, silicon cardide, or similar host, relies on a Lindblad dynamical equation and clarifies the relative contributions of charge and spin noise to relaxation and decoherence, along with their dependence on the defect spin's depth and resonant frequencies. The calculations agree with the experimental measurements of Sangtawesin $\textit{et al.}$, Phys. Rev. X $\textbf{9}$, 031052 (2019) and point to an unexpected importance of charge noise. △ Less

Submitted 23 March, 2023; originally announced March 2023.

Comments: 19 pages, 6 figures

Red Emission from Copper-Vacancy Color Centers in Zinc Sulfide Colloidal Nanocrystals

Authors: Sarah M. Thompson, Cüneyt Şahin, Shengsong Yang, Michael E. Flatté, Christopher B. Murray, Lee C. Bassett, Cherie R. Kagan

Abstract: Copper-doped zinc sulfide (ZnS:Cu) exhibits down-conversion luminescence in the UV, visible, and IR regions of the electromagnetic spectrum; the visible red, green, and blue emission is referred to as R-Cu, G-Cu, and B-Cu, respectively. The sub-bandgap emission arises from optical transitions between localized electronic states created by point defects, making ZnS:Cu a prolific phosphor material a… ▽ More Copper-doped zinc sulfide (ZnS:Cu) exhibits down-conversion luminescence in the UV, visible, and IR regions of the electromagnetic spectrum; the visible red, green, and blue emission is referred to as R-Cu, G-Cu, and B-Cu, respectively. The sub-bandgap emission arises from optical transitions between localized electronic states created by point defects, making ZnS:Cu a prolific phosphor material and an intriguing candidate material for quantum information science, where point defects excel as single-photon sources and spin qubits. Colloidal nanocrystals (NCs) of ZnS:Cu are particularly interesting as hosts for the creation, isolation, and measurement of quantum defects, since their size, composition, and surface chemistry can be precisely tailored for bio-sensing and opto-electronic applications. Here, we present a method for synthesizing colloidal ZnS:Cu NCs that emit primarily R-Cu, which has been proposed to arise from the Cu$_{Zn}$-V$_S$ complex, an impurity-vacancy point defect structure analogous to well-known quantum defects in other materials that produce favorable optical and spin dynamics. First principles calculations confirm the thermodynamic stability and electronic structure of Cu$_{Zn}$-V$_S$. Temperature- and time-dependent optical properties of ZnS:Cu NCs show blueshifting luminescence and an anomalous plateau in the intensity dependence as temperature is increased from 19 K to 290 K, for which we propose an empirical dynamical model based on thermally-activated coupling between two manifolds of states inside the ZnS bandgap. Understanding of R-Cu emission dynamics, combined with a controlled synthesis method for obtaining R-Cu centers in colloidal NC hosts, will greatly facilitate the development of Cu$_{Zn}$-V$_S$ and related complexes as quantum point defects in ZnS. △ Less

Submitted 1 March, 2023; v1 submitted 10 January, 2023; originally announced January 2023.

Comments: 31 pages, 19 figures

Strong photon-magnon coupling using a lithographically defined organic ferrimagnet

Authors: Qin Xu, Hil Fung Harry Cheung, Donley S. Cormode, Tharnier O. Puel, Huma Yusuf, Michael Chilcote, Michael E. Flatté, Ezekiel Johnston-Halperin, Gregory D. Fuchs

Abstract: We demonstrate a hybrid quantum system composed of superconducting resonator photons and magnons hosted by the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_x$). Our work is motivated by the challenge of scalably integrating an arbitrarily-shaped, low-dam** magnetic system with planar superconducting circuits, thus enabling a host of quantum magnonic circuit designs that were p… ▽ More We demonstrate a hybrid quantum system composed of superconducting resonator photons and magnons hosted by the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_x$). Our work is motivated by the challenge of scalably integrating an arbitrarily-shaped, low-dam** magnetic system with planar superconducting circuits, thus enabling a host of quantum magnonic circuit designs that were previously inaccessible. For example, by leveraging the inherent properties of magnons, one can enable nonreciprocal magnon-mediated quantum devices that use magnon propagation rather than electrical current. We take advantage of the properties of V[TCNE]$_x$, which has ultra-low intrinsic dam**, can be grown at low processing temperatures on arbitrary substrates, and can be patterned via electron beam lithography. We demonstrate the scalable, lithographically integrated fabrication of hybrid quantum magnonic devices consisting of a thin-film superconducting resonator coupled to a low-dam**, thin-film V[TCNE]$_x$ microstructure. Our devices operate in the strong coupling regime, with a cooperativity as high as 1181(44) at T$\sim$0.4 K, suitable for scalable quantum circuit integration. This work paves the way for the exploration of high-cooperativity hybrid magnonic quantum devices in which magnonic circuits can be designed and fabricated as easily as electrical wires. △ Less

Submitted 8 December, 2022; originally announced December 2022.

Comments: 31 pages preprint format with supplementary materials

Quantum simulation of spin-1/2 XYZ model using solid-state spin centers

Authors: Troy Losey, Denis R. Candido, ** Zhang, Y. Meurice, M. E. Flatté, S. -W. Tsai

Abstract: In this work we propose a novel solid-state platform for creating quantum simulators based on implanted spin centers in semiconductors. We show that under the presence of an external magnetic field, an array of $S=1$ spin centers interacting through magnetic dipole-dipole interaction can be mapped into an effective spin-half system equivalent to the XYZ model in an external magnetic field. Interes… ▽ More In this work we propose a novel solid-state platform for creating quantum simulators based on implanted spin centers in semiconductors. We show that under the presence of an external magnetic field, an array of $S=1$ spin centers interacting through magnetic dipole-dipole interaction can be mapped into an effective spin-half system equivalent to the XYZ model in an external magnetic field. Interestingly, this system presents a wide range of quantum phases and critical behaviors that can be controlled via magnetic field and orientational arrangement of the spin centers. We demonstrate our interacting spin chain can be tuned to both isotropic Heisenberg model and transverse-field Ising universality class. Notably, our model contains a line where the system is in a critical floating phase that terminates at Berezinskii-Kosterlitz-Thouless and Pokrovsky-Talapov transition points. We propose this system as the first solid-state quantum simulator for the floating phase based on spin centers. △ Less

Submitted 16 January, 2024; v1 submitted 15 September, 2022; originally announced September 2022.

Comments: 16 pages, 7 figures

Driving a pure spin current from nuclear-polarization gradients

Authors: Nicholas J. Harmon, Michael E. Flatté

Abstract: A pure spin current is predicted to occur when an external magnetic field and a linearly inhomogeneous spin-only field are appropriately aligned. Under these conditions (such as originate from nuclear contact hyperfine fields that do not affect orbital motion) a linear, spin-dependent dispersion for free electrons emerges from the Landau Hamiltonian. The result is that spins of opposite orientatio… ▽ More A pure spin current is predicted to occur when an external magnetic field and a linearly inhomogeneous spin-only field are appropriately aligned. Under these conditions (such as originate from nuclear contact hyperfine fields that do not affect orbital motion) a linear, spin-dependent dispersion for free electrons emerges from the Landau Hamiltonian. The result is that spins of opposite orientation flow in opposite directions giving rise to a pure spin current. A classical model of the spin and charge dynamics reveals intuitive aspects of the full quantum mechanical solution. We propose optical orientation or electrical polarization experiments to demonstrate this outcome. △ Less

Submitted 5 August, 2022; originally announced August 2022.

Comments: 5 pages, 3 figures. Accepted in Phys. Rev. B

Theory of spin center sensing of diffusion

Authors: Denis R. Candido, Michael E. Flatté

Abstract: Surface electric (charge) noise influences spin defects due to fluctuation of the surface charge density and also the electrostatic potential at the crystal surface. Surprisingly, the two-point correlation function of both the charged particles' positions and the surface electrostatic potential strongly influences the power of the polynomial decay of the electric noise spectral density; this power… ▽ More Surface electric (charge) noise influences spin defects due to fluctuation of the surface charge density and also the electrostatic potential at the crystal surface. Surprisingly, the two-point correlation function of both the charged particles' positions and the surface electrostatic potential strongly influences the power of the polynomial decay of the electric noise spectral density; this power is not determined solely by the character of the charge fluctuators. Time-dependent crossover behavior near the correlation time of the fluctuators, of the spin defect's relaxation and decoherence, provide a quantitative fingerprint of the diffusive behavior of charged particles at the surface. △ Less

Submitted 8 June, 2022; v1 submitted 31 December, 2021; originally announced December 2021.

Comments: 7 pages, 3 figures

Theory of spin-polarized current flow through a localized spin triplet state

Authors: Stephen R. McMillan, Michael E. Flatté

Abstract: We derive a formalism describing quantum-coherent features of spin-polarized charge current through a partially-polarized spin triplet defect in a $\textit{transverse}$ magnetic field. We predict distinct few-milli-tesla-dc magnetoresistance signatures that identify a $\textit{single}$ spin-triplet center's character and reveal the orientation of the spin triplet's zero-field splitting axis relati… ▽ More We derive a formalism describing quantum-coherent features of spin-polarized charge current through a partially-polarized spin triplet defect in a $\textit{transverse}$ magnetic field. We predict distinct few-milli-tesla-dc magnetoresistance signatures that identify a $\textit{single}$ spin-triplet center's character and reveal the orientation of the spin triplet's zero-field splitting axis relative to the magnetic contact's polarization. For example, in 4H-SiC the single $(hh)$, $(kk)$, $(hk)$, and $(kh)$ divacancies are all distinct. Spin-polarized current flow efficiently polarizes the spin, potentially electrically initializing spin-triplet-based qubits. △ Less

Submitted 29 December, 2021; originally announced December 2021.

Dissipationless Circulating Currents and Fringe Magnetic Fields Near a Single Spin Embedded in a Two-Dimensional Electron Gas

Authors: Adonai R. da Cruz, Michael E. Flatté

Abstract: Theoretical calculations predict the dissipationless circulating current induced by a spin defect in a two-dimensional electron gas with spin-orbit coupling. The shape and spatial extent of these dissipationless circulating currents depend dramatically on the relative strengths of spin-orbit fields with differing spatial symmetry, offering the potential to use an electric gate to manipulate nanosc… ▽ More Theoretical calculations predict the dissipationless circulating current induced by a spin defect in a two-dimensional electron gas with spin-orbit coupling. The shape and spatial extent of these dissipationless circulating currents depend dramatically on the relative strengths of spin-orbit fields with differing spatial symmetry, offering the potential to use an electric gate to manipulate nanoscale magnetic fields and couple magnetic defects. The spatial structure of the magnetic field produced by this current is calculated and provides a direct way to measure the spin-orbit fields of the host, as well as the defect spin orientation, \textit{e.g.} through scanning nanoscale magnetometry. △ Less

Submitted 12 November, 2021; originally announced November 2021.

Quantum-confined charge transfer that enhances magnetic anisotropy in lanthanum M-type hexaferrites

Authors: Churna Bhandari, Michael E. Flatté, Durga Paudyal

Abstract: Iron-based hexaferrites are critical-element-free permanent magnet components of magnetic devices. Of particular interest is electron-doped M-type hexaferrite i.e., LaFe$_{12}$O$_{19}$ (LaM) in which extra electrons introduced by lanthanum substitution of barium/strontium play a key role in uplifting the magnetocrystalline anisotropy. We investigate the electronic structure of lanthanum hexaferrit… ▽ More Iron-based hexaferrites are critical-element-free permanent magnet components of magnetic devices. Of particular interest is electron-doped M-type hexaferrite i.e., LaFe$_{12}$O$_{19}$ (LaM) in which extra electrons introduced by lanthanum substitution of barium/strontium play a key role in uplifting the magnetocrystalline anisotropy. We investigate the electronic structure of lanthanum hexaferrite using a \textit{localized} density functional theory which reproduces semiconducting behavior and identifies the origin of the very large magnetocrystalline anisotropy. Localized charge transfer from lanthanum to the iron at the crystal's $2a$ site produces a narrow $3d_{z^2}$ valence band strongly locking the magnetization along the $c$ axis. The calculated uniaxial magnetic anisotropy energies from fully self-consistent calculations are nearly double the single-shot values, and agree well with available experiments. The chemical similarity of lanthanum to other rare earths suggests that LaM can host for other rare earths possessing non-trivial $4f$ electronic states for, \textit{e.g.,} microwave-optical quantum transduction. △ Less

Submitted 22 June, 2021; originally announced June 2021.

Comments: 10 pages and 9 figures

Journal ref: Phys. Rev. Materials 5, 094415 (2021)

Raman Spectroscopy and Aging of the Low-Loss Ferrimagnet Vanadium Tetracyanoethylene

Authors: H. F. H. Cheung, M. Chilcote, H. Yusuf, D. S. Cormode, Y. Shi, M. E. Flatté, E. Johnston-Halperin, G. D. Fuchs

Abstract: Vanadium tetracyanoethylene (V[TCNE]$_{x}$, $x\approx 2$) is an organic-based ferrimagnet with a high magnetic ordering temperature $\mathrm{T_C>600 ~K}$, low magnetic dam**, and growth compatibility with a wide variety of substrates. However, similar to other organic-based materials, it is sensitive to air. Although encapsulation of V[TCNE]$_{x}$ with glass and epoxy extends the film lifetime f… ▽ More Vanadium tetracyanoethylene (V[TCNE]$_{x}$, $x\approx 2$) is an organic-based ferrimagnet with a high magnetic ordering temperature $\mathrm{T_C>600 ~K}$, low magnetic dam**, and growth compatibility with a wide variety of substrates. However, similar to other organic-based materials, it is sensitive to air. Although encapsulation of V[TCNE]$_{x}$ with glass and epoxy extends the film lifetime from an hour to a few weeks, what is limiting its lifetime remains poorly understood. Here we characterize encapsulated V[TCNE]$_{x}$ films using confocal microscopy, Raman spectroscopy, ferromagnetic resonance and SQUID magnetometry. We identify the relevant features in the Raman spectra in agreement with \textit{ab initio} theory, reproducing $\mathrm{C=C,C\equiv N}$ vibrational modes. We correlate changes in the effective dynamic magnetization with changes in Raman intensity and in photoluminescence. Based on changes in Raman spectra, we hypothesize possible structural changes and aging mechanisms in V[TCNE]$_x$. These findings enable a local optical probe of V[TCNE]$_{x}$ film quality, which is invaluable in experiments where assessing film quality with local magnetic characterization is not possible. △ Less

Submitted 25 January, 2021; originally announced January 2021.

Comments: 14 pages including supplement

Opportunities for long-range magnon-mediated entanglement of spin qubits via on- and off-resonant coupling

Authors: Masaya Fukami, Denis R. Candido, David D. Awschalom, Michael E. Flatté

Abstract: The ability to manipulate entanglement between multiple spatially-separated qubits is essential for quantum information processing. Although nitrogen-vacancy (NV) centers in diamond provide a promising qubit platform, develo** scalable two-qubit gates remains a well-known challenge. To this end, magnon-mediated entanglement proposals have attracted attention due to their long-range spin-coherent… ▽ More The ability to manipulate entanglement between multiple spatially-separated qubits is essential for quantum information processing. Although nitrogen-vacancy (NV) centers in diamond provide a promising qubit platform, develo** scalable two-qubit gates remains a well-known challenge. To this end, magnon-mediated entanglement proposals have attracted attention due to their long-range spin-coherent propagation. Optimal device geometries and gate protocols of such schemes, however, have yet to be determined. Here we predict strong long-distance ($>μ$m) NV-NV coupling via magnon modes with cooperativities exceeding unity in ferromagnetic bar and waveguide structures. Moreover, we explore and compare on-resonant transduction and off-resonant virtual-magnon exchange protocols, and discuss their suitability for generating or manipulating entangled states at low temperatures ($T\lesssim 150$ mK) under realistic experimental conditions. This work will guide future experiments that aim to entangle spin qubits in solids with magnon excitations. △ Less

Submitted 3 September, 2021; v1 submitted 22 January, 2021; originally announced January 2021.

Comments: PRX Quantum in press, 10 pages, 5 figures

Journal ref: PRX Quantum 2, 040314 (2021)

Magnon-induced Giant Anomalous Nernst Effect in Single Crystal MnBi

Authors: Bin He, Cüneyt Şahin, Stephen R. Boona, Brian C. Sales, Claudia Felser, Michael E. Flatté, Joseph P. Heremans

Abstract: Thermoelectric modules are a promising approach to energy harvesting and efficient cooling. In addition to the longitudinal Seebeck effect, recently transverse devices utilizing the anomalous Nernst effect (ANE) have attracted interest. For high conversion efficiency, it is required that the material should have a large ANE thermoelectric power and low electrical resistance, the product of which i… ▽ More Thermoelectric modules are a promising approach to energy harvesting and efficient cooling. In addition to the longitudinal Seebeck effect, recently transverse devices utilizing the anomalous Nernst effect (ANE) have attracted interest. For high conversion efficiency, it is required that the material should have a large ANE thermoelectric power and low electrical resistance, the product of which is the ANE conductivity. ANE is usually explained in terms of intrinsic contributions from Berry curvature. Our observations suggest that extrinsic contributions also matter. Studying single-crystal MnBi, we find a very high ANE thermopower (~10 $μ$V/K) under 0.6 T at 80 K, and a transverse thermoelectric conductivity of over 40 A/Km. With insight from theoretical calculations, we attribute this large ANE predominantly to a new advective magnon contribution arising from magnon-electron spin-angular momentum transfer. We propose that introducing large spin-orbit coupling into ferromagnetic materials may enhance the ANE through the extrinsic contribution of magnons. △ Less

Submitted 9 December, 2021; v1 submitted 4 September, 2020; originally announced September 2020.

Comments: 14 pages, 4 figures

Journal ref: Joule 5, 1-11 (2021)

Suppression of the optical linewidth and spin decoherence of a quantum spin center in a $p$$-$$n$ diode

Authors: Denis R. Candido, Michael E. Flatté

Abstract: We present a quantitative theory of the suppression of the optical linewidth due to charge fluctuation noise in a ${p}$$-$${n}$ diode, recently observed in Anderson et al., Science 366, 1225 (2019). We connect the local electric field with the voltage across the diode, allowing for the identification of the defect depth from the experimental threshold voltage. Furthermore, we show that an accurate… ▽ More We present a quantitative theory of the suppression of the optical linewidth due to charge fluctuation noise in a ${p}$$-$${n}$ diode, recently observed in Anderson et al., Science 366, 1225 (2019). We connect the local electric field with the voltage across the diode, allowing for the identification of the defect depth from the experimental threshold voltage. Furthermore, we show that an accurate description of the decoherence of such spin centers requires a complete spin$-$1 formalism that yields a bi-exponential decoherence process, and predict how reduced charge fluctuation noise suppresses the spin center's decoherence rate. △ Less

Submitted 30 August, 2020; originally announced August 2020.

Comments: 17 pages, 9 figures

Journal ref: PRX Quantum 2, 040310 (2021)

Exploring a quantum-information-relevant magnonic material: Ultralow dam** at low temperature in the organic ferrimagnet V[TCNE]x

Authors: Huma Yusuf, Michael Chilcote, Denis R. Candido, Seth W. Kurfman, Donley S. Cormode, Yu Lu, Michael E. Flatté, Ezekiel Johnston-Halperin

Abstract: Quantum information science and engineering requires novel low-loss magnetic materials for magnon-based quantum-coherent operations. The search for low-loss magnetic materials, traditionally driven by applications in microwave electronics near room-temperature, has gained additional constraints from the need to operate at cryogenic temperatures for many applications in quantum information science… ▽ More Quantum information science and engineering requires novel low-loss magnetic materials for magnon-based quantum-coherent operations. The search for low-loss magnetic materials, traditionally driven by applications in microwave electronics near room-temperature, has gained additional constraints from the need to operate at cryogenic temperatures for many applications in quantum information science and technology. Whereas yttrium iron garnet (YIG) has been the material of choice for decades, the emergence of molecule-based materials with robust magnetism and ultra-low dam** has opened new avenues for exploration. Specifically, thin-films of vanadium tetracyanoethylene (V[TCNE]x) can be patterned into the multiple, connected structures needed for hybrid quantum elements and have shown room-temperature Gilbert dam** (α = 4 \times 10^-5) that rivals the intrinsic (bulk) dam** otherwise seen only in highly-polished YIG spheres (far more challenging to integrate into arrays). Here, we present a comprehensive and systematic study of the low-temperature magnetization dynamics for V[TCNE]x thin films, with implications for their application in quantum systems. These studies reveal a temperature-driven, strain-dependent magnetic anisotropy that compensates the thin-film shape anisotropy, and the recovery of a magnetic resonance linewidth at 5 K that is comparable to room-temperature values (roughly 2 G at 9.4 GHz). We can account for these variations of the V[TCNE]x linewidth within the context of scattering from very dilute paramagnetic impurities, and anticipate additional linewidth narrowing as the temperature is further reduced. △ Less

Submitted 9 November, 2021; v1 submitted 29 August, 2020; originally announced August 2020.

Comments: The first two authors contributed equally

Journal ref: AVS Quantum Sci. 3, 026801 (2021)

Opposite current-induced spin polarizations in bulk-metallic Bi2Se3 and bulk-insulating Bi2Te2Se topological insulator thin flakes

Authors: Jifa Tian, Cüneyt Şahin, Ireneusz Miotkowski, Michael E. Flatté, Yong P. Chen

Abstract: One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba type spin-orbit interaction (SOI) and bulk conducting states t… ▽ More One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba type spin-orbit interaction (SOI) and bulk conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current induced spin polarization (CISP) difficult. In this work, we directly compared the CISP between bulk-insulating Bi2Te2Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity (SHC). However, compared to BTS221, an opposite CISP is observed in the bulk metallic Bi2Se3, consistent instead with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk spin Hall Effect (SHE). Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices. △ Less

Submitted 22 August, 2020; originally announced August 2020.

Comments: 15 pages, 6 figures

Journal ref: Phys. Rev. B 103, 035412 (2021)

Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface

Authors: Nicholas J. Harmon, James P. Ashton, Patrick M. Lenahan, Michael E. Flatté

Abstract: Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance techniques, however the interpretation of such measurements has been hampered by the lack of a general theory of the phenomena. This article presents such a theory for… ▽ More Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance techniques, however the interpretation of such measurements has been hampered by the lack of a general theory of the phenomena. This article presents such a theory for two electrical spin-resonance techniques, electrically detected magnetic resonance (EDMR) and the recently observed near-zero field magnetoresistance (NZFMR), by generalizing Shockley Read Hall trap-assisted recombination current calculations via stochastic Liouville equations. Spin mixing at this dielectric interface occurs via the hyperfine interaction, which we show can be treated either quantum mechanically or semiclassically, yielding distinctive differences in the current across the interface. By analyzing the bias dependence of NZFMR and EDMR, we find that the recombination in a Si/SiO$_2$ MOSFET is well understood within a semiclassical approach. △ Less

Submitted 18 August, 2020; originally announced August 2020.

Comments: 16 pages, 11 figures. Submitted to Applied Physics Letters Materials

Theory of oblique-field magnetoresistance from spin centers in three-terminal spintronic devices

Authors: Nicholas J. Harmon, Michael E. Flatté

Abstract: We present a general stochastic Liouville theory of electrical transport across a barrier between two conductors that occurs via sequential hop** through a single defect's spin-0 to spin-1/2 transition. We find magneto-conductances similar to Hanle features (pseudo-Hanle features) that originate from Pauli blocking without spin accumulation, and also predict that evolution of the defect's spin m… ▽ More We present a general stochastic Liouville theory of electrical transport across a barrier between two conductors that occurs via sequential hop** through a single defect's spin-0 to spin-1/2 transition. We find magneto-conductances similar to Hanle features (pseudo-Hanle features) that originate from Pauli blocking without spin accumulation, and also predict that evolution of the defect's spin modifies the conventional Hanle response, producing an inverted Hanle signal from spin center evolution. We propose studies in oblique magnetic fields that would unambiguously determine if a magnetoconductance results from spin-center assisted transport. △ Less

Submitted 12 August, 2020; originally announced August 2020.

Comments: 5 pages, 4 figures; submitted to Phys. Rev. B Rapid Communications

Journal ref: Phys. Rev. B 103, 035310 (2021)

N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Authors: D. Tjeertes, T. J. F. Verstijnen, A. Gonzalo, J. M. Ulloa, M. S. Sharma, M. Felici, A. Polimeni, F. Biccari, M. Gurioli, G. Pettinari, C. Şahin, M. E. Flatté, P. M. Koenraad

Abstract: Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In… ▽ More Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N-nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N-nH complexes dissociate as an H$_2$ molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N-nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N-nH complex. △ Less

Submitted 23 July, 2020; originally announced July 2020.

Comments: 11 pages, 12 figures

Journal ref: Phys. Rev. B 102, 125304 (2020)

Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation

Authors: Elias B. Frantz, Nicholas J. Harmon Stephen R. McMillan, Stephen J. Moxim, Michael E. Flatte, Patrick M. Lenahan

Abstract: We report on a method by which we can systematically extract spectroscopic information such as isotropic electron-nuclear hyperfine coupling constants from near-zero field magnetoresistance spectra. The method utilizes a least squares fitting of models developed from the stochastic quantum Liouville equation. We applied our fitting algorithm to two distinct material systems: Si/SiO2 MOSFETs, and a… ▽ More We report on a method by which we can systematically extract spectroscopic information such as isotropic electron-nuclear hyperfine coupling constants from near-zero field magnetoresistance spectra. The method utilizes a least squares fitting of models developed from the stochastic quantum Liouville equation. We applied our fitting algorithm to two distinct material systems: Si/SiO2 MOSFETs, and a-Si:H MIS capacitors. Our fitted results and hyperfine parameters are in reasonable agreement with existing knowledge of the defects present in the systems. Our work indicates that the NZFMR response and fitting of the NZFMR spectrum via models developed from the stochastic quantum Liouville equation could be a relatively simple yet powerful addition to the family of spin-based techniques used to explore the chemical and structural nature of point defects in semiconductor devices and insulators. △ Less

Submitted 26 June, 2020; originally announced June 2020.

Journal ref: J. Appl. Phys. 128, 124504 (2020)

Predicted strong coupling of solid-state spins via a single magnon mode

Authors: Denis R. Candido, Gregory D. Fuchs, Ezekiel Johnston-Halperin, Michael E. Flatté

Abstract: We propose an approach to realize a hybrid quantum system composed of a diamond nitrogen-vacancy (NV) center spin coupled to a magnon mode of the low-dam**, low-moment organic ferrimagnet vanadium tetracyanoethylene. We derive an analytical expression for the spin-magnon cooperativity as a function of NV position under a micron-scale perpendicularly magnetized disk, and show that, surprisingly,… ▽ More We propose an approach to realize a hybrid quantum system composed of a diamond nitrogen-vacancy (NV) center spin coupled to a magnon mode of the low-dam**, low-moment organic ferrimagnet vanadium tetracyanoethylene. We derive an analytical expression for the spin-magnon cooperativity as a function of NV position under a micron-scale perpendicularly magnetized disk, and show that, surprisingly, the cooperativity will be higher using this magnetic material than in more conventional materials with larger magnetic moments, due to in part to the reduced demagnetization field. For reasonable experimental parameters, we predict that the spin-magnon-mode coupling strength is $g\sim 10$ kHz. For isotopically pure $^{12}$C diamond we predict strong coupling of an NV spin to the unoccupied magnon mode, with cooperativity $\mathcal C=6$ for a wide range of NV spin locations within the diamond, well within the spatial precision of NV center implantation. Thus our proposal describes a practical pathway for single-spin-state-to-single-magnon-occupancy transduction and for entangling NV centers over micron length scales. △ Less

Submitted 1 September, 2020; v1 submitted 9 March, 2020; originally announced March 2020.

Comments: Main text (15 pages + 4 figures) and Supplemental Material

Low-Dam** Ferromagnetic Resonance in Electron-Beam Patterned, High-$Q$ Vanadium Tetracyanoethylene Magnon Cavities

Authors: Andrew Franson, Na Zhu, Seth Kurfman, Michael Chilcote, Denis R. Candido, Kristen S. Buchanan, Michael E. Flatté, Hong X. Tang, Ezekiel Johnston-Halperin

Abstract: Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss ($α= 3.98 \pm 0.22 \times 10^{-5}$), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene (… ▽ More Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss ($α= 3.98 \pm 0.22 \times 10^{-5}$), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene ($\mathrm{V[TCNE]}_x$) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here we present the deposition, patterning, and characterization of $\mathrm{V[TCNE]}_x$ thin films with lateral dimensions ranging from 1 micron to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer (PMMA/P(MMA-MAA)) on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 microns with only a factor of 2 increase down to 5 microns. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provides an exchange stiffness, $A_{ex} = 2.2 \pm 0.5 \times 10^{-10}$ erg/cm, as well as insights into the mode character and surface spin pinning. Below a micron, the deposition is non-conformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of $\mathrm{V[TCNE]}_x$ for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information. △ Less

Submitted 11 October, 2019; originally announced October 2019.

Comments: 18 pages, 7 figures, submitted to APL Materials

Journal ref: APL Materials 7, 121113 (2019)

Tunable tunnel barriers in a semiconductor via ionization of individual atoms

Authors: Sara M. Mueller, Dongjoon Kim, Stephen R. McMillan, Steven J. Tjung, Jacob J. Repicky, Stephen Gant, Evan Lang, Fedor Bergmann, Kevin Werner, Enam Chowdhury, Aravind Asthagiri, Michael E. Flatte, Jay A. Gupta

Abstract: We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We att… ▽ More We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We attribute the effect to occupation of a (+/0) charge transition level, and switching of the associated adatom-induced band bending. The effect in STM topographic images is well reproduced by transport modeling of filling and emptying rates as a function of the tip position. STM atomic contrast and tunneling spectra are in good agreement with density functional theory calculations for In adatoms. The adatom ionization effect can extend to distances greater than 50 nm away, which we attribute to the low concentration and low binding energy of the residual donors in the undoped InSb crystal. These studies demonstrate how individual atoms can be used to sensitively control current flow in nanoscale devices. △ Less

Submitted 15 June, 2020; v1 submitted 9 September, 2019; originally announced September 2019.

Comments: 15 pages, 6 figures

Itinerant ferromagnetism and intrinsic anomalous Hall effect in amorphous iron-germanium

Authors: D. S. Bouma, Z. Chen, B. Zhang, F. Bruni, M. E. Flatté, R. Streubel, L. -W. Wang, R. Q. Wu, F. Hellman

Abstract: The amorphous iron-germanium system ($a$-Fe$_x$Ge$_{1-x}$) lacks long-range structural order and hence lacks a meaningful Brillouin zone. The magnetization of \aFeGe is well explained by the Stoner model for Fe concentrations $x$ above the onset of magnetic order around $x=0.4$, indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe-$3d$ sta… ▽ More The amorphous iron-germanium system ($a$-Fe$_x$Ge$_{1-x}$) lacks long-range structural order and hence lacks a meaningful Brillouin zone. The magnetization of \aFeGe is well explained by the Stoner model for Fe concentrations $x$ above the onset of magnetic order around $x=0.4$, indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe-$3d$ states sufficiently to polarize the electronic structure despite $\mathbf{k}$ being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity $ρ_{xy}^{\mathrm{AH}}$ relative to crystalline FeGe; this $ρ_{xy}^{\mathrm{AH}}$ is compared to density functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied $\mathbf{k}$-states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of $a$-Fe$_x$Ge$_{1-x}$ ($0.38 \leq x \leq 0.61$). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to $\mathbf{k}$-space. This result and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems. △ Less

Submitted 6 January, 2020; v1 submitted 16 August, 2019; originally announced August 2019.

Comments: 11 pages, 10 figures

Journal ref: Phys. Rev. B 101, 014402 (2020)

Image of dynamic local exchange interactions in the dc magnetoresistance of spin-polarized current through a dopant

Authors: Stephen R. McMillan, Nicholas J. Harmon, Michael E. Flatté

Abstract: We predict strong, dynamical effects in the dc magnetoresistance of current flowing from a spin-polarized electrical contact through a magnetic dopant in a nonmagnetic host. Using the stochastic Liouville formalism we calculate clearly-defined resonances in the dc magnetoresistance when the applied magnetic field matches the exchange interaction with a nearby spin. At these resonances spin precess… ▽ More We predict strong, dynamical effects in the dc magnetoresistance of current flowing from a spin-polarized electrical contact through a magnetic dopant in a nonmagnetic host. Using the stochastic Liouville formalism we calculate clearly-defined resonances in the dc magnetoresistance when the applied magnetic field matches the exchange interaction with a nearby spin. At these resonances spin precession in the applied magnetic field is canceled by spin evolution in the exchange field, preserving a dynamic bottleneck for spin transport through the dopant. Similar features emerge when the dopant spin is coupled to nearby nuclei through the hyperfine interaction. These features provide a precise means of measuring exchange or hyperfine couplings between localized spins near a surface using spin-polarized scanning tunneling microscopy, without any ac electric or magnetic fields, even when the exchange or hyperfine energy is orders of magnitude smaller than the thermal energy. △ Less

Submitted 11 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. Lett. 125, 257203 (2020)

Fermi Level Dependent Spin Pum** from a Magnetic Insulator into a Topological Insulator

Authors: Hailong Wang, James Kally, Cuneyt Sahin, Tao Liu, Wilson Yanez, Eric J. Kamp, Anthony Richardella, Mingzhong Wu, Michael E. Flatte, Nitin Samarth

Abstract: Topological spintronics aims to exploit the spin-momentum locking in the helical surface states of topological insulators for spin-orbit torque devices. We address a fundamental question that still remains unresolved in this context: does the topological surface state alone produce the largest values of spin-charge conversion efficiency or can the strongly spin-orbit coupled bulk states also contr… ▽ More Topological spintronics aims to exploit the spin-momentum locking in the helical surface states of topological insulators for spin-orbit torque devices. We address a fundamental question that still remains unresolved in this context: does the topological surface state alone produce the largest values of spin-charge conversion efficiency or can the strongly spin-orbit coupled bulk states also contribute significantly? By studying the Fermi level dependence of spin pum** in topological insulator/ferrimagnetic insulator bilayers, we show that the spin Hall conductivity is constant when the Fermi level is tuned across the bulk band gap, consistent with a full bulk band calculation. The results suggest a new perspective, wherein "bulk-surface correspondence" allows spin-charge conversion to be simultaneously viewed either as coming from the full bulk band, or from spin-momentum locking of the surface state. △ Less

Submitted 26 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. Research 1, 012014 (2019)

Thermal chiral anomaly in the magnetic-field induced ideal Weyl phase of Bi1-xSbx topological insulators

Authors: Dung Vu, Wenjuan Zhang, Cüneyt Şahin, Michael E. Flatté, Nandini Trivedi, Joseph P. Heremans

Abstract: The chiral anomaly is the predicted break down of chiral symmetry in a Weyl semimetal with monopoles of opposite chirality when an electric field parallel to a magnetic field is applied. It occurs because of charge pum** from a positive chirality to a negative chirality monopole. Experimental observation of this fundamental effect has been plagued by concerns about the pathways of the current. H… ▽ More The chiral anomaly is the predicted break down of chiral symmetry in a Weyl semimetal with monopoles of opposite chirality when an electric field parallel to a magnetic field is applied. It occurs because of charge pum** from a positive chirality to a negative chirality monopole. Experimental observation of this fundamental effect has been plagued by concerns about the pathways of the current. Here, we unambiguously demonstrate the thermal analog of the chiral anomaly in topological insulator bismuth-antimony alloys driven into an ideal Weyl semimetal state by a Zeeman field, with the chemical potential pinned at the Weyl points, and in which the Fermi surface has no trivial pockets. The experimental signature is a large enhancement of the thermal conductivity in an applied magnetic field parallel to the thermal gradient that follows the Wiedemann-Franz law above 60 K. Absence of current flow avoids extrinsic effects that plague electrical measurements. △ Less

Submitted 25 January, 2021; v1 submitted 5 June, 2019; originally announced June 2019.

Comments: 25 pages, 4 figures

Theory of Single Photon Detection by a Photoreceptive Molecule and a Quantum Coherent Spin Center

Authors: N. J. Harmon, M. E. Flatté

Abstract: The long spin coherence times in ambient conditions of color centers in solids, such as nitrogen-vacancy (NV$^{-}$) centers in diamond, make these systems attractive candidates for quantum sensing. Quantum sensing provides remarkable sensitivity at room temperature to very small external perturbations, including magnetic fields, electric fields, and temperature changes. A photoreceptive molecule,… ▽ More The long spin coherence times in ambient conditions of color centers in solids, such as nitrogen-vacancy (NV$^{-}$) centers in diamond, make these systems attractive candidates for quantum sensing. Quantum sensing provides remarkable sensitivity at room temperature to very small external perturbations, including magnetic fields, electric fields, and temperature changes. A photoreceptive molecule, such as those involved in vision, changes its charge state or conformation in response to the absorption of a single photon. We show the resulting change in local electric field modifies the properties of a nearby quantum coherent spin center in a detectable fashion. Using the formalism of positive operator values measurements (POVMs), we analyze the photo-excited electric dipole field and, by extension, the arrival of a photon based on a measured readout, using a fluorescence cycle, from the spin center. We determine the jitter time of photon arrival and the probability of measurement errors. We predict that configuring multiple independent spin sensors around the photoreceptive molecule would dramatically suppresses the measurement error. △ Less

Submitted 4 June, 2019; originally announced June 2019.

Probing the local electronic structure of isovalent Bi atoms in InP

Authors: C. M. Krammel, A. R. da Cruz, M. E. Flatté, M. Roy, P. A. Maksym, L. Y. Zhang, K. Wang, Y. Y. Li, S. M. Wang, P. M. Koenraad

Abstract: Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled state X-STM images on the natural $\{110\}$ cleavage planes. The Bi impurity state has a hig… ▽ More Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled state X-STM images on the natural $\{110\}$ cleavage planes. The Bi impurity state has a highly anisotropic bowtie-like structure and extends over several lattice sites. These Bi-induced charge redistributions extend along the $\left\langle 110\right\rangle$ directions, which define the bowtie-like structures we observe. Local tight-binding calculations reproduce the experimentally observed spatial structure of the Bi impurity state. In addition, the influence of the Bi atoms on the electronic structure is investigated in scanning tunneling spectroscopy measurements. These measurements show that Bi induces a resonant state in the valence band, which shifts the band edge towards higher energies. This is in good agreement to first principles calculations. Furthermore, we show that the energetic position of the Bi induced resonance and its influence on the onset of the valence band edge depend crucially on the position of the Bi atoms relative to the cleavage plane. △ Less

Submitted 31 January, 2020; v1 submitted 4 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. B 101, 024113 (2020)

Nanoscale tunnel field effect transistor based on a complex oxide lateral heterostructure

Authors: A. Müller, C. Şahin, M. Z. Minhas, M. E. Flatté, G. Schmidt

Abstract: We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the current through a narrow channel of insulating $\mathrm{SrTiO_3}$ is controlled via an electrostatic side gate. Drain-source I/V-curves have been measured at low… ▽ More We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the current through a narrow channel of insulating $\mathrm{SrTiO_3}$ is controlled via an electrostatic side gate. Drain-source I/V-curves have been measured at low and elevated temperatures. The transistor shows strong electric-field and temperature-dependent behaviour with a steep sub-threshold slope %of up to as small as $10\:\mathrm{mV/decade}$ and a transconductance as high as $g_m\approx 22 \: \mathrm{μA/V}$. A fully consistent transport model for the drain-source tunneling reproduces the measured steep sub-threshold slope. △ Less

Submitted 23 April, 2019; originally announced April 2019.

Comments: 20 pages, 6 figures, Supplementary material: 4 pages, 2 figures

Journal ref: Phys. Rev. Applied 11, 064026 (2019)

Tuning Spin Dynamics and Localization Near the Metal-Insulator Transition in Fe/GaAs heterostructures

Authors: Yu-Sheng Ou, N. J. Harmon, Patrick Odenthal, R. K. Kawakami, M. E. Flatté, E. Johnston-Halperin

Abstract: We present a simultaneous investigation of coherent spin dynamics in both localized and itinerant carriers in Fe/GaAs heterostructures using ultrafast and spin-resolved pump-probe spectroscopy. We find that for excitation densities that push the transient Fermi energy of photocarriers above the mobility edge there exist two distinct precession frequencies in the ob-served spin dynamics, allowing u… ▽ More We present a simultaneous investigation of coherent spin dynamics in both localized and itinerant carriers in Fe/GaAs heterostructures using ultrafast and spin-resolved pump-probe spectroscopy. We find that for excitation densities that push the transient Fermi energy of photocarriers above the mobility edge there exist two distinct precession frequencies in the ob-served spin dynamics, allowing us to simultaneously monitor both localized and itinerant states. For low magnetic fields (below 3 T) the beat frequency between these two excitations evolves linearly, indicating that the nuclear polarization is saturated almost immediately and that the hyperfine coupling to these two states is comparable, despite the 100x enhancement in nuclear polarization provided by the presence of the Fe layer. At higher magnetic fields (above 3 T) the Zeeman energy drives reentrant localization of the photocarriers. Subtracting the constant hyperfine contribution from both sets of data allows us to extract the Lande g-factor for each state and estimate their energy relative to the bottom of the conduction band, yielding -2.16 meV and 17 meV for localized and itinerant states, respectively. This work advances our fundamental understanding of spin-spin interactions between electron and nuclear spin species, as well as between localized and itinerant electronics states, and therefore has implications for future work in both spintronics and quantum information/computation. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Comments: 18 pages, 3 figures

Journal ref: Phys. Rev. B 98, 134444 (2018)

Strain Engineering of the Intrinsic Spin Hall Conductivity in a SrTiO$_3$ Quantum Well

Authors: Cüneyt Şahin, Giovanni Vignale, Michael E. Flatté

Abstract: The intrinsic spin Hall conductivity of a two-dimensional gas confined to SrTiO$_3$, such as occurs at an LaAlO$_3$/SrTiO$_3$ interface, is calculated from the Kubo formula. The effect of strain in the [001] (normal to the quantum well direction) and the [111] direction is incorporated into a full tight-binding Hamiltonian. We show that the spin-charge conversion ratio can be significantly altered… ▽ More The intrinsic spin Hall conductivity of a two-dimensional gas confined to SrTiO$_3$, such as occurs at an LaAlO$_3$/SrTiO$_3$ interface, is calculated from the Kubo formula. The effect of strain in the [001] (normal to the quantum well direction) and the [111] direction is incorporated into a full tight-binding Hamiltonian. We show that the spin-charge conversion ratio can be significantly altered through strain and gate voltage by tuning the chemical potential. Strain direction is also a significant factor in the spin Hall response as this direction affects the alignment of the conduction bands. △ Less

Submitted 30 March, 2018; originally announced April 2018.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. Materials 3, 014401 (2019)

Blurring the boundaries between topological and non-topological phenomena in dots

Authors: Denis R. Candido, M. E. Flatté, J. Carlos Egues

Abstract: We investigate the electronic and transport properties of topological and trivial InAs$_{1-x}$Bi$_x$ quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAs$_{1-x}$Bi$_x$, we predicted that Bi-alloyed quantum wells become $\sim 30$meV gapped 2D topological insulators for well widths $d>6.9$nm $(x = 0.15)$ and obtain the $\boldsymbol{k.p}$ param… ▽ More We investigate the electronic and transport properties of topological and trivial InAs$_{1-x}$Bi$_x$ quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAs$_{1-x}$Bi$_x$, we predicted that Bi-alloyed quantum wells become $\sim 30$meV gapped 2D topological insulators for well widths $d>6.9$nm $(x = 0.15)$ and obtain the $\boldsymbol{k.p}$ parameters of the corresponding Bernevig-Hughes-Zhang (BHZ) model. We analytically solve this model for cylindrical confinement via modified Bessel functions. For non-topological dots we find "geometrically protected" discrete helical edge-like states, i.e., Kramers pairs with spin-angular-momentum locking, in stark contrast with ordinary InAs QDs. For a conduction window with four edge states, we find that the two-terminal conductance ${\cal G}$ vs. the QD radius $R$ and the gate $V_g$ controlling its levels shows a double peak at $2e^2/h$ for both topological and trivial QDs. In contrast, when bulk and edge-state Kramers pairs coexist and are degenerate, a single-peak resonance emerges. Our results blur the boundaries between topological and non-topological phenomena for conductance measurements in small systems such as QDs. Bi-based BHZ QDs should also prove important as hosts to edge spin qubits. △ Less

Submitted 7 March, 2018; originally announced March 2018.

Comments: Main text (4 pages + 3 figures) and Supplemental Material

Journal ref: Phys. Rev. Lett. 121, 256804 (2018)

Broadband EPR Spectroscopy in Diverse Field Conditions Using Optically Detected Nitrogen-Vacancy Centers in Diamond

Authors: C. M. Purser, V. P. Bhallamudi, C. S. Wolfe, H. Yusuf, B. A. McCullian, C. Jayaprakash, M. E. Flatté, P. C. Hammel

Abstract: Paramagnetic magnetic resonance, a powerful technique for characterizing and identifying chemical targets, is increasingly used for imaging; however, low spin polarization at room temperature and moderate magnetic fields poses challenges for detecting small numbers of spins. In this work, we use fluorescence from nitrogen-vacancy (NV) centers in diamond to detect the electron paramagnetic resonanc… ▽ More Paramagnetic magnetic resonance, a powerful technique for characterizing and identifying chemical targets, is increasingly used for imaging; however, low spin polarization at room temperature and moderate magnetic fields poses challenges for detecting small numbers of spins. In this work, we use fluorescence from nitrogen-vacancy (NV) centers in diamond to detect the electron paramagnetic resonance (EPR) spectrum of optically inactive target spins under various conditions of field magnitude and orientation. The protocol requires neither direct microwave manipulation of the NV spins nor spectral overlap between NV and target spin resonances, thus enabling broadband detection. This unexpected non-resonant coupling is attributable to a two-phonon process that relaxes NV spins proximate to the fluctuating dipole moment of the target spin, suggesting that the sensitivity is determined by the dipole-dipole coupling strength. This approach holds promise for sensitive EPR detection, particularly in settings where control over the diamond-crystal orientation is difficult. This is notably the case for biological sensing applications, where nanodiamonds are being pursued for their bright, stable fluorescence and biocompatibility. △ Less

Submitted 20 February, 2019; v1 submitted 26 February, 2018; originally announced February 2018.

Voltage-Controlled Topological-Spin Switch for Ultra-Low-Energy Computing--Performance Modeling and Benchmarking

Authors: Shaloo Rakheja, Michael E. Flattè, Andrew D. Kent

Abstract: A voltage-controlled topological-spin switch (vTOPSS) that uses a hybrid topological insulator-magnetic insulator multiferroic is presented that can implement Boolean logic operations with sub-10 aJ energy-per-bit and energy-delay product on the order of $10^{-27}$ Js. The device uses a topological insulator (TI), which has the highest efficiency of conversion of electric field to spin torque yet… ▽ More A voltage-controlled topological-spin switch (vTOPSS) that uses a hybrid topological insulator-magnetic insulator multiferroic is presented that can implement Boolean logic operations with sub-10 aJ energy-per-bit and energy-delay product on the order of $10^{-27}$ Js. The device uses a topological insulator (TI), which has the highest efficiency of conversion of electric field to spin torque yet observed at room temperature, and a low-moment magnetic insulator (MI) that can respond rapidly to a given spin torque. We present the theory of operation of vTOPSS, develop analytic models of its performance metrics, elucidate performance scaling with dimensions and voltage, and benchmark vTOPSS against existing spin-based and CMOS devices. Compared to existing spin-based devices, such as all-spin logic and charge-spin logic, vTOPSS offers 100$\times$ lower energy dissipation and (40-100)$\times$ lower energy-delay product. With experimental advances and improved material properties, we show that the energy-delay product of vTOPSS can be lowered to $10^{-29}$ Js, competitive against existing CMOS technology. Finally, we establish that interconnect issues that dominate the performance in CMOS logic are relatively less significant for vTOPSS, implying that highly resistive materials can indeed be used to interconnect vTOPSS devices. △ Less

Submitted 21 February, 2018; originally announced February 2018.

Comments: 12 pages, 10 figures

Journal ref: Phys. Rev. Applied 11, 054009 (2019)

Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures

Authors: Borzoyeh Shojaei, Anthony P. McFadden, Mihir Pendharkar, Joon Sue Lee, Michael E. Flatté, Chris J. Palmstrøm

Abstract: In an ideal InAs/GaSb bilayer of appropriate dimension in-plane electron and hole bands overlap and hybridize, and a topologically non-trivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's potential landscape, however, is subject to microscopic perturbations originating from material imperfections. In this work, the effect of disorder on the electron… ▽ More In an ideal InAs/GaSb bilayer of appropriate dimension in-plane electron and hole bands overlap and hybridize, and a topologically non-trivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's potential landscape, however, is subject to microscopic perturbations originating from material imperfections. In this work, the effect of disorder on the electronic structure of InAs/GaSb bilayers was studied by the temperature and magnetic field dependence of the resistance of a dual-gated heterostructures gate-tuned through the inverted to normal gap regimes. Conduction in the inverted (predicted topological) regime was qualitatively similar to behavior in a disordered two-dimensional system. The impact of charged impurities and interface roughness on the formation of topologically protected edge states and an insulating bulk was estimated. The experimental evidence and estimates of disorder in the potential landscape indicated the potential fluctuations in state-of-the-art films are sufficiently strong such that conduction in the predicted topological insulator (TI) regime was dominated by a symplectic metal phase rather than a TI phase. The implications are that future efforts must address disorder in this system and focus must be placed on the reduction of defects and disorder in these heterostructures if a TI regime is to be achieved. △ Less

Submitted 27 October, 2017; originally announced October 2017.

Comments: 16 pages, including 6 figures

Journal ref: Phys. Rev. Materials 2, 064603 (2018)

Atomic-Scale Magnetometry of Dynamic Magnetization

Authors: J. van Bree, M. E. Flatté

Abstract: The spatial resolution of imaging magnetometers has benefited from scanning probe techniques. The requirement that the sample perturbs the scanning probe through a magnetic field external to its volume limits magnetometry to samples with pre-existing magnetization. We propose a magnetometer in which the perturbation is reversed: the probe's magnetic field generates a response of the sample, which… ▽ More The spatial resolution of imaging magnetometers has benefited from scanning probe techniques. The requirement that the sample perturbs the scanning probe through a magnetic field external to its volume limits magnetometry to samples with pre-existing magnetization. We propose a magnetometer in which the perturbation is reversed: the probe's magnetic field generates a response of the sample, which acts back on the probe and changes its energy. For an NV$^-$ spin center in diamond this perturbation changes the fine-structure splitting of the spin ground state. Sensitive measurement techniques using coherent detection schemes then permit detection of the magnetic response of paramagnetic and diamagnetic materials. This technique can measure the thickness of magnetically dead layers with better than $0.1$ Å$~$accuracy. △ Less

Submitted 13 February, 2017; originally announced February 2017.

Comments: 5 pages, 4 figures (Supplemental Material: 6 pages, 1 figure)

Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves

Authors: T. A. Peterson, S. J. Patel, C. C. Geppert, K. D. Christie, A. Rath, D. Pennachio, M. E. Flatté, P. M. Voyles, C. J. Palmstrøm, P. A. Crowell

Abstract: We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $μ$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $μ$m spin diffusion length and applying a forward bias to the detector contact. Th… ▽ More We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $μ$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $μ$m spin diffusion length and applying a forward bias to the detector contact. The spin transport parameters are measured by comparing the injector-detector contact separation dependence of the spin valve signal with a numerical model accounting for spin drift and diffusion. The apparent suppression of the spin injection efficiency at the lowest temperatures reflects a breakdown of the ordinary drift-diffusion model in the regime of large spin accumulation. A theoretical calculation of the D'yakonov-Perel spin lifetime agrees well with the measured $n$-GaAs spin lifetime over the entire temperature range. △ Less

Submitted 12 October, 2016; originally announced October 2016.

Comments: 8 figures

Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

Authors: Nicholas J. Harmon, Michael E. Flatté

Abstract: We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing proc… ▽ More We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination, and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced, and is used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method of enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in magnetic domains to organic light emitting diode emission. △ Less

Submitted 18 August, 2016; originally announced August 2016.

Comments: 4 pages, 3 figures, submitted to Appl. Phys. Lett

Journal ref: Applied Physics Letters 109, 243303 (2016)

Theory of spin-coherent transport through a defect spin state in a metal/ferromagnet tunnel junction during ferromagnetic resonance

Authors: Nicholas J. Harmon, Michael E. Flatté

Abstract: We describe the coherent interaction between a defect spin at the interface of a ferromagnet and a non-magnetic material, under bias and when the magnetization of the ferromagnetic contact precesses during ferromagnetic resonance. The magnet filters charge carriers by preferentially allowing in parallel spins, which leads to a dynamic spin accumulation on the defect. Local effective fields acting… ▽ More We describe the coherent interaction between a defect spin at the interface of a ferromagnet and a non-magnetic material, under bias and when the magnetization of the ferromagnetic contact precesses during ferromagnetic resonance. The magnet filters charge carriers by preferentially allowing in parallel spins, which leads to a dynamic spin accumulation on the defect. Local effective fields acting on the defect spin site modify the defect spin's precession, which also modifies the charge current through the defect. This new form of current-detected spin resonance reveals the local environment of the defect, and thus can yield the defect identity. △ Less

Submitted 3 January, 2018; v1 submitted 15 July, 2016; originally announced July 2016.

Comments: complete rewrite - 5 pages, 4 figures

Report number: Phys. Rev. B 98, 035412 (2018)

Journal ref: Phys. Rev. B 98, 035412 (2018)

Low loss spin wave resonances in organic-based ferrimagnet vanadium tetracyanoethylene thin films

Authors: Na Zhu, Xufeng Zhang, I. H. Froning, Michael E. Flatté, E. Johnston-Halperin, Hong X. Tang

Abstract: We experimentally demonstrate high quality factor spin wave resonances in an encapsulated thin film of the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_\textit{x~2}$) coated on an a-plane sapphire substrate by low temperature chemical vapor deposition. The thickness standing wave modes are observed in a broad frequency range (1 GHz ~ 5 GHz) with high quality factor exceeding 3,2… ▽ More We experimentally demonstrate high quality factor spin wave resonances in an encapsulated thin film of the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_\textit{x~2}$) coated on an a-plane sapphire substrate by low temperature chemical vapor deposition. The thickness standing wave modes are observed in a broad frequency range (1 GHz ~ 5 GHz) with high quality factor exceeding 3,200 in ambient air at room temperature, rivaling those of inorganic magnetic materials. The exchange constant of V[TCNE]$_\textit{x~2}$, a crucial material parameter for future study and device design of the V[TCNE]$_\textit{x~2}$, is extracted from the measurement with a value of $(4.61\pm 0.35)\times 10^{-16} \mathrm{\: m^{2}}$. Our result establishes the feasibility of using organic-based materials for building hybrid magnonic devices and circuits. △ Less

Submitted 10 August, 2016; v1 submitted 11 July, 2016; originally announced July 2016.

Comments: 12 pages, 3 figures