Showing 1–3 of 3 results for author: Flasby, A

Fast Flux-Activated Leakage Reduction for Superconducting Quantum Circuits

Authors: Nathan Lacroix, Luca Hofele, Ants Remm, Othmane Benhayoune-Khadraoui, Alexander McDonald, Ross Shillito, Stefania Lazar, Christoph Hellings, Francois Swiadek, Dante Colao-Zanuz, Alexander Flasby, Mohsen Bahrami Panah, Michael Kerschbaum, Graham J. Norris, Alexandre Blais, Andreas Wallraff, Sebastian Krinner

Abstract: Quantum computers will require quantum error correction to reach the low error rates necessary for solving problems that surpass the capabilities of conventional computers. One of the dominant errors limiting the performance of quantum error correction codes across multiple technology platforms is leakage out of the computational subspace arising from the multi-level structure of qubit implementat… ▽ More Quantum computers will require quantum error correction to reach the low error rates necessary for solving problems that surpass the capabilities of conventional computers. One of the dominant errors limiting the performance of quantum error correction codes across multiple technology platforms is leakage out of the computational subspace arising from the multi-level structure of qubit implementations. Here, we present a resource-efficient universal leakage reduction unit for superconducting qubits using parametric flux modulation. This operation removes leakage down to our measurement accuracy of $7\cdot 10^{-4}$ in approximately $50\, \mathrm{ns}$ with a low error of $2.5(1)\cdot 10^{-3}$ on the computational subspace, thereby reaching durations and fidelities comparable to those of single-qubit gates. We demonstrate that using the leakage reduction unit in repeated weight-two stabilizer measurements reduces the total number of detected errors in a scalable fashion to close to what can be achieved using leakage-rejection methods which do not scale. Our approach does neither require additional control electronics nor on-chip components and is applicable to both auxiliary and data qubits. These benefits make our method particularly attractive for mitigating leakage in large-scale quantum error correction circuits, a crucial requirement for the practical implementation of fault-tolerant quantum computation. △ Less

Submitted 13 September, 2023; originally announced September 2023.

Calibration of Drive Non-Linearity for Arbitrary-Angle Single-Qubit Gates Using Error Amplification

Authors: Stefania Lazăr, Quentin Ficheux, Johannes Herrmann, Ants Remm, Nathan Lacroix, Christoph Hellings, Francois Swiadek, Dante Colao Zanuz, Graham J. Norris, Mohsen Bahrami Panah, Alexander Flasby, Michael Kerschbaum, Jean-Claude Besse, Christopher Eichler, Andreas Wallraff

Abstract: The ability to execute high-fidelity operations is crucial to scaling up quantum devices to large numbers of qubits. However, signal distortions originating from non-linear components in the control lines can limit the performance of single-qubit gates. In this work, we use a measurement based on error amplification to characterize and correct the small single-qubit rotation errors originating fro… ▽ More The ability to execute high-fidelity operations is crucial to scaling up quantum devices to large numbers of qubits. However, signal distortions originating from non-linear components in the control lines can limit the performance of single-qubit gates. In this work, we use a measurement based on error amplification to characterize and correct the small single-qubit rotation errors originating from the non-linear scaling of the qubit drive rate with the amplitude of the programmed pulse. With our hardware, and for a 15-ns pulse, the rotation angles deviate by up to several degrees from a linear model. Using purity benchmarking, we find that control errors reach $2\times 10^{-4}$, which accounts for half of the total gate error. Using cross-entropy benchmarking, we demonstrate arbitrary-angle single-qubit gates with coherence-limited errors of $2\times 10^{-4}$ and leakage below $6\times 10^{-5}$. While the exact magnitude of these errors is specific to our setup, the presented method is applicable to any source of non-linearity. Our work shows that the non-linearity of qubit drive line components imposes a limit on the fidelity of single-qubit gates, independent of improvements in coherence times, circuit design, or leakage mitigation when not corrected for. △ Less

Submitted 2 December, 2022; originally announced December 2022.

Journal ref: 2023

Optimized Graphene Electrodes for contacting Graphene Nanoribbons

Authors: Oliver Braun, Jan Overbeck, Maria El Abbassi, Silvan Käser, Roman Furrer, Antonis Olziersky, Alexander Flasby, Gabriela Borin Barin, Rimah Darawish, Klaus Müllen, Pascal Ruffieux, Roman Fasel, Ivan Shorubalko, Mickael L. Perrin, Michel Calame

Abstract: Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbo… ▽ More Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes. △ Less

Submitted 25 February, 2021; originally announced February 2021.