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Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations
Authors:
Yuanchen Chu,
**g**g Shi,
Kai Miao,
Yang Zhong,
Prasad Sarangapani,
Timothy S. Fisher,
Gerhard Klimeck,
Xiulin Ruan,
Tillmann Kubis
Abstract:
The non-equilibrium Green's function (NEGF) method with Büttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the interface of Si/heavy-Si is considered, where heavy-Si differs from Si only in the mass value. With Büttiker probe scattering parameters tuned against MD in homogene…
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The non-equilibrium Green's function (NEGF) method with Büttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the interface of Si/heavy-Si is considered, where heavy-Si differs from Si only in the mass value. With Büttiker probe scattering parameters tuned against MD in homogeneous Si, the NEGF-predicted thermal boundary resistance quantitatively agrees with MD for wide mass ratios. Artificial resistances that the unaltered Landauer approach yield at virtual interfaces in homogeneous systems are absent in the present NEGF approach. Spectral information result from NEGF in its natural representation without further transformations. The spectral results show that the scattering between different phonon modes plays a crucial role in thermal transport across interfaces. Büttiker probes provide an efficient and reliable way to include anharmonicity in phonon related NEGF. NEGF including the Büttiker probes can reliably predict phonon transport across interfaces and at finite temperatures.
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Submitted 18 November, 2019; v1 submitted 30 August, 2019;
originally announced August 2019.
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Photoconductivity calculations of bilayer graphene from first principles and deformation-potential approach
Authors:
Yijun Ge,
Timothy S. Fisher
Abstract:
We report first-principles calculations of electron-phonon coupling in bilayer graphene and the corresponding contribution to carrier scattering. At the phonon $Γ$ point, electrons with energies less than 200 meV are scattered predominantly by LA$^\prime$ and TA$^\prime$ modes while higher-energy electron scattering is dominated by optical phonon modes. Based on a two-temperature model, heat trans…
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We report first-principles calculations of electron-phonon coupling in bilayer graphene and the corresponding contribution to carrier scattering. At the phonon $Γ$ point, electrons with energies less than 200 meV are scattered predominantly by LA$^\prime$ and TA$^\prime$ modes while higher-energy electron scattering is dominated by optical phonon modes. Based on a two-temperature model, heat transfer from electrons with an initial temperature of 2000 K to the lattice (phonons) with an initial temperature of 300 K is computed, and in the overall relaxation process, most of this energy scatters into K-point phonon optical modes due to their strong coupling with electrons and their high energies. A Drude model is used to calculate photoconductivity for bilayer graphene with different do** levels. Good agreement with prior experimental trends for both the real and imaginary components of photoconductivity confirms the model's applicability. The effects of do** levels and electron-phonon scattering on photoconductiviy are analyzed. We also extract acoustic and optical deformation potentials from average scattering rates obtained from density functional theory (DFT) calculations and compare associated photoconductivity calculations with DFT results. The comparison indicates that momentum-dependent electron-phonon scattering potentials are required to provide accurate predictions.
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Submitted 26 May, 2020; v1 submitted 25 July, 2019;
originally announced July 2019.
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Atomistic Simulation of Phonon and Magnon Thermal Transport across the Ferro-Paramagnetic Transition
Authors:
Yanguang Zhou,
Julien Tranchida,
Yijun Ge,
Jayathi Y. Murthy,
Timothy S. Fisher
Abstract:
A temperature-dependent approach involving Green-Kubo equilibrium atomic and spin dynamics (GKEASD) is reported to assess phonon and magnon thermal transport processes accounting for phonon-magnon interactions. Using body-center cubic (BCC) iron as a case study, GKEASD successfully reproduces its characteristic temperature-dependent spiral and lattice thermal conductivities. The non-electronic the…
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A temperature-dependent approach involving Green-Kubo equilibrium atomic and spin dynamics (GKEASD) is reported to assess phonon and magnon thermal transport processes accounting for phonon-magnon interactions. Using body-center cubic (BCC) iron as a case study, GKEASD successfully reproduces its characteristic temperature-dependent spiral and lattice thermal conductivities. The non-electronic thermal conductivity, i.e., the sum of phonon and magnon thermal conductivities, calculated using GKEASD for BCC Fe agrees well with experimental measurements. Spectral energy analysis reveals that high-frequency phonon-magnon scattering rates are one order of magnitude larger than those at low frequencies due to energy scattering conservation rules and high densities of states. Higher temperatures further accentuate this phenomenon. This new framework fills existing gaps in simulating thermal transport across the ferro- to para-magnetic transition. Future application of this methodology to phonon- and magnon-dominant insulators and semiconductors will enhance understanding of emerging thermoelectric, spin caloritronic and superconducting materials.
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Submitted 9 January, 2020; v1 submitted 3 January, 2019;
originally announced January 2019.
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Dramatic increase in the thermal boundary conductance and radiation limit from a Nonequilibrium Landauer Approach
Authors:
**g**g Shi,
Xiaolong Yang,
Timothy S. Fisher,
Xiulin Ruan
Abstract:
Thermal boundary conductance (TBC) is critical in many thermal and energy applications. A decades-old puzzle has been that many of the measured TBCs, such as those well characterized across Al/Si and ZnO/GaN interfaces, significantly exceed theoretical results or even the absolute upper limit called the ``radiation limit", suggesting the failure of the theory. Here, we identify that for high-trans…
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Thermal boundary conductance (TBC) is critical in many thermal and energy applications. A decades-old puzzle has been that many of the measured TBCs, such as those well characterized across Al/Si and ZnO/GaN interfaces, significantly exceed theoretical results or even the absolute upper limit called the ``radiation limit", suggesting the failure of the theory. Here, we identify that for high-transmission interfaces, the commonly assumed phonon local thermal equilibrium adjacent to the interface fails, and the measurable phonon temperatures are not their emission temperature. We hence develop a ``nonequilibrium Landauer approach" and define the unique ``dressed" and ``intrinsic" TBCs. Combining our approach even with a simple diffuse mismatch model (DMM) nearly doubles the theoretical TBCs across the Al/Si and ZnO/GaN interfaces, and the theoretical results agree with experiments for the first time. The radiation limit is also redefined and found to increase over 100\% over the original radiation limit, and it can now well bound all the experimental data.
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Submitted 14 April, 2019; v1 submitted 19 December, 2018;
originally announced December 2018.
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Phonon Eigenspectrum-Based Formulation of the Atomistic Green's Function Method
Authors:
Sridhar Sadasivam,
Umesh V. Waghmare,
Timothy S. Fisher
Abstract:
While the atomistic Green's function (AGF) method has the potential to compute spectrally resolved phonon transport across interfaces, most prior formulations of the AGF method provide only the total phonon transmission function that includes contributions from all phonon branches or channels. In this work, we present a formulation of the conventional AGF technique in terms of phonon eigenspectra…
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While the atomistic Green's function (AGF) method has the potential to compute spectrally resolved phonon transport across interfaces, most prior formulations of the AGF method provide only the total phonon transmission function that includes contributions from all phonon branches or channels. In this work, we present a formulation of the conventional AGF technique in terms of phonon eigenspectra that provides a natural decomposition of the total transmission function into contributions from various phonon modes. The method involves the use of Dyson and Lippmann-Schwinger equations to determine surface Green's functions from the phonon eigenspectrum of the bulk, and establishes a direct connection between the transmission function and the bulk phonon spectra of the materials forming the interface. We elucidate our formulation of the AGF technique through its application to a microscopic picture of phonon mode conversion at Si-Ge interfaces with atomic intermixing. Intermixing of atoms near the interface is shown to increase the phase space available for phonon mode conversion and to enhance thermal interface conductance at moderate levels of atomic mixing. The eigenspectrum-based AGF (EAGF) method should be useful in determination of microscopic mechanisms of phonon scattering and identification of the specific modes that dominate thermal transport across an interface.
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Submitted 10 October, 2017; v1 submitted 1 August, 2017;
originally announced August 2017.
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Reduced work function of graphene by metal adatoms
Authors:
Merid Legesse,
Fedwa El Mellouhi,
El Tayeb Bentria,
Mohamed E. Madjet,
Timothy S Fisher,
Sabre Kais,
Fahhad H Alharbi
Abstract:
In this paper, the work function of graphene doped by different metal adatoms and at different concentrations is investigated. Density functional theory is used to maximize the reduction of the work function. In general, the work function drops significantly before reaching saturation. For example in the case of Cs do**, the work function saturates at 2.05 eV with a modest 8 % do**. The adsorp…
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In this paper, the work function of graphene doped by different metal adatoms and at different concentrations is investigated. Density functional theory is used to maximize the reduction of the work function. In general, the work function drops significantly before reaching saturation. For example in the case of Cs do**, the work function saturates at 2.05 eV with a modest 8 % do**. The adsorption of different concentrations on metal adatoms on graphene is also studied. Our calculations show that the adatoms prefer to relax at hollow sites. The transfer of electron from metallic dopants to the graphene for all the studied systems shifts the Fermi energy levels above the Dirac-point and the doped graphenes become metallic. The value of Fermi energy shifts depends on the type of metallic dopants and its concentrations. A detail analysis of the electronic structure in terms of band structure and density of states, absorption energy, and charge transfer for each adatom-graphene system is presented.
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Submitted 3 June, 2017;
originally announced June 2017.
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Thermal Transport Across Metal Silicide-Silicon Interfaces: First-Principles Calculations and Green's Function Transport Simulations
Authors:
Sridhar Sadasivam,
Ning Ye,
James Charles,
Kai Miao,
Joseph P. Feser,
Tillmann Kubis,
Timothy S. Fisher
Abstract:
In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi$_2$-Si interfaces. An important development in the present work is t…
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In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi$_2$-Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used `mixing rules' to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Green's function (RGF) method with Büttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that cross-interface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi$_2$-Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with predictions that include all transport processes: elastic and inelastic phonon scattering, electron-phonon coupling in the metal, and electron-phonon coupling across the interface.
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Submitted 12 January, 2017; v1 submitted 10 September, 2016;
originally announced September 2016.
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Thermal Transport Across Metal Silicide-Silicon Interfaces: An Experimental Comparison between Epitaxial and Non-epitaxial Interfaces
Authors:
Ning Ye,
Joseph P Feser,
Sridhar Sadasivam,
Timothy S. Fisher,
Tianshi Wang,
Chaoying Ni,
Anderson Janotti
Abstract:
Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi$_2$, CoSi$_2$, NiSi and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most si…
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Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi$_2$, CoSi$_2$, NiSi and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no difference in the thermal interface conductance of epitaxial and non-epitaxial silicide/silicon interfaces. The effect of substrate carrier concentration is also investigated over a wide range of p- and n-type do**, and is found to be independent of carrier concentration, regardless of whether the interface is epitaxial and regardless of silicide type. In the case of epitaxial CoSi$_2$, a comparison of temperature dependant experimental data is made with two detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. At temperatures above 100K, the AGF approach greatly underpredicts the CoSi$_2$ data, while the DMM prediction matches the data well. The full-dispersion DMM is also found to closely predict the experimentally observed temperature-dependent interface conductance for epitaxial NiSi/Si and non-epitaxial TiSi$_2$/Si interfaces. In the case of epitaxial PtSi/Si interfaces, full dispersion DMM significantly overpredicts the experimental data.
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Submitted 26 January, 2017; v1 submitted 6 September, 2016;
originally announced September 2016.
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Magnetothermoelectric effects in graphene and their dependence on scatterer concentration, magnetic field and band gap
Authors:
Arpan Kundu,
Majed Alrefae,
Timothy S. Fisher
Abstract:
Using a semiclassical Boltzmann transport equation (BTE) approach, we derive analytical expressions for electric and thermoelectric transport coefficients of graphene in the presence and absence of a magnetic field. Scattering due to acoustic phonons, charged impurities and vacancies are considered in the model. Seebeck ($S_{xx}$) and Nernst ($N$) coefficients have been evaluated as functions of c…
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Using a semiclassical Boltzmann transport equation (BTE) approach, we derive analytical expressions for electric and thermoelectric transport coefficients of graphene in the presence and absence of a magnetic field. Scattering due to acoustic phonons, charged impurities and vacancies are considered in the model. Seebeck ($S_{xx}$) and Nernst ($N$) coefficients have been evaluated as functions of carrier density, temperature, scatterer concentration, magnetic field and induced band gap, and the results are compared with experimental data. $S_{xx}$ is an odd function of Fermi energy while $N$ is an even function, as observed in experiments. The peaks of both coefficients are found to increase with decreasing scatterer concentration and increasing temperature. Furthermore, opening a band gap decreases $N$ but increases $S_{xx}$. Applying a magnetic field introduces an asymmetry in the variation of $S_{xx}$ with Fermi energy across the Dirac point. The formalism is more accurate and computationally efficient than the conventional Green's function approach used to model transport coefficients and can be used to explore transport properties of other exotic materials.
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Submitted 8 August, 2016;
originally announced August 2016.
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Local Plasticity as the Source of Creep and Slow Dynamics in Granular Materials
Authors:
Ishan Srivastava,
Timothy S. Fisher
Abstract:
Creep mechanisms in uniaxially compressed 3D granular solids comprised of faceted frictionless grains are studied numerically using a constant pressure and constant stress simulation method. Rapid uniaxial compression followed by slow dilation is predicted on the basis of a logarithmic creep phenomenon. Micromechanical analysis indicates the existence of a correlation between granular creep and gr…
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Creep mechanisms in uniaxially compressed 3D granular solids comprised of faceted frictionless grains are studied numerically using a constant pressure and constant stress simulation method. Rapid uniaxial compression followed by slow dilation is predicted on the basis of a logarithmic creep phenomenon. Micromechanical analysis indicates the existence of a correlation between granular creep and grain-scale deformations. Localized regions of large strain appear during creep and grow in magnitude and size with time. Furthermore, the accumulation of non-affine granular displacements increases linearly with local strain, thereby providing insights into the origins of plastic dissipation during stress-driven creep evolution. The prediction of slow logarithmic dynamics in the absence of friction indicates a universality in the role of plastic dissipation during the creep of granular solids.
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Submitted 23 March, 2016;
originally announced March 2016.
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Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures
Authors:
K. Miao,
S. Sadasivam,
J. Charles,
G. Klimeck,
T. S. Fisher,
T. Kubis
Abstract:
Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method (NEGF) is known to serve this purpose very well, but is numerically very expensive. This work extends the very efficient Büttiker probe concept to phonon NEGF an…
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Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method (NEGF) is known to serve this purpose very well, but is numerically very expensive. This work extends the very efficient Büttiker probe concept to phonon NEGF and discusses all implications of this method. Büttiker probe parameters are presented that reproduce within NEGF experimental phonon conductances of Si and Ge between 10K and 1000K. Results of this method in SiGe heterojunctions illustrate the impact of interface relaxation on the device heat conductance and the importance of inelastic scattering for the phonon distribution.
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Submitted 1 December, 2015; v1 submitted 26 August, 2015;
originally announced August 2015.
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Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation
Authors:
Sharmila N. Shirodkar,
Umesh V. Waghmare,
Timothy S. Fisher,
Ricardo Grau-Crespo
Abstract:
Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C$_{2x}$B$_{1-x}$N$_{1-x}$ alloys via both compositiona…
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Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C$_{2x}$B$_{1-x}$N$_{1-x}$ alloys via both compositional and configurational modification. We start from the BN end-member, which already has a large bandgap, and then show that (a) the bandgap can in principle be reduced to about 2 eV with moderate substitution of C $(x<0.25)$; and (b) the electronic structure of C$_{2x}$B$_{1-x}$N$_{1-x}$ can be further tuned not only with composition $x$, but also with the configuration adopted by C substituents in the BN matrix. Our analysis, based on accurate screened hybrid functional calculations, provides a clear understanding of the correlation found between the bandgap and the level of aggregation of C atoms: the bandgap decreases most when the C atoms are maximally isolated, and increases with aggregation of C atoms due to the formation of bonding and anti-bonding bands associated with hybridization of occupied and empty defect states. We determine the location of valence and conduction band edges relative to vacuum and discuss the implications on the potential use of 2D C$_{2x}$B$_{1-x}$N$_{1-x}$ alloys in photocatalytic applications. Finally, we assess the thermodynamic limitations on the formation of these alloys using a cluster expansion model derived from first-principles.
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Submitted 20 April, 2015;
originally announced April 2015.
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Electron-Phonon Coupling and Thermal Conductance at a Metal-Semiconductor Interface: First-principles Analysis
Authors:
Sridhar Sadasivam,
Umesh V. Waghmare,
Timothy S. Fisher
Abstract:
The mechanism of heat transfer and the contribution of electron-phonon coupling to thermal conductance of a metal-semiconductor interface remains unclear in the present literature. We report ab initio simulations of a technologically important titanium silicide (metal) - silicon (semiconductor) interface to estimate the Schottky barrier height (SBH), and the strength of electron-phonon and phonon-…
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The mechanism of heat transfer and the contribution of electron-phonon coupling to thermal conductance of a metal-semiconductor interface remains unclear in the present literature. We report ab initio simulations of a technologically important titanium silicide (metal) - silicon (semiconductor) interface to estimate the Schottky barrier height (SBH), and the strength of electron-phonon and phonon-phonon heat transfer across the interface. The electron and phonon dispersion relations of TiSi$_2$ with C49 structure and the TiSi$_2$-Si interface are obtained using first-principles calculations within the density functional theory (DFT) framework. These are used to estimate electron-phonon linewidths and the associated Eliashberg function that quantifies coupling. We show that the coupling strength of electrons with interfacial phonon modes is of the same order of magnitude as coupling of electrons to phonon modes in the bulk metal, and its contribution to electron-phonon interfacial conductance is comparable to the harmonic phonon-phonon conductance across the interface.
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Submitted 17 March, 2015; v1 submitted 12 January, 2015;
originally announced January 2015.
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Variable-cell method for stress-controlled jamming of athermal, frictionless grains
Authors:
Kyle C. Smith,
Ishan Srivastava,
Timothy S. Fisher,
Meheboob Alam
Abstract:
A new method is introduced to simulate jamming of polyhedral grains under controlled stress that incorporates global degrees of freedom through the metric tensor of a periodic cell containing grains. Jamming under hydrostatic/isotropic stress and athermal conditions leads to a precise definition of the ideal jamming point at zero shear stress. The structures of tetrahedra jammed hydrostatically ex…
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A new method is introduced to simulate jamming of polyhedral grains under controlled stress that incorporates global degrees of freedom through the metric tensor of a periodic cell containing grains. Jamming under hydrostatic/isotropic stress and athermal conditions leads to a precise definition of the ideal jamming point at zero shear stress. The structures of tetrahedra jammed hydrostatically exhibit less translational order and lower jamming-point density than previously described `maximally random jammed' hard tetrahedra. Under the same conditions, cubes jam with negligible nematic order. Grains with octahedral symmetry jam in the large-system limit with an abundance of face-face contacts in the absence of nematic order. For sufficiently large face-face contact number, percolating clusters form that span the entire simulation box. The response of hydrostatically jammed tetrahedra and cubes to shear-stress perturbation is also demonstrated with the variable-cell method.
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Submitted 22 February, 2014;
originally announced February 2014.
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Coupled plasmon - phonon excitations in extrinsic monolayer graphene
Authors:
V. U. Nazarov,
F. Alharbi,
T. S. Fisher,
S. Kais
Abstract:
The existence of an acoustic plasmon in extrinsic (doped or gated) monolayer graphene was found recently in an {\it ab initio} calculation with the frozen lattice [M. Pisarra {\it et al.}, arXiv:1306.6273, 2013]. By the {\em fully dynamic} density-functional perturbation theory approach, we demonstrate a strong coupling of the acoustic plasmonic mode to lattice vibrations. Thereby, the acoustic pl…
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The existence of an acoustic plasmon in extrinsic (doped or gated) monolayer graphene was found recently in an {\it ab initio} calculation with the frozen lattice [M. Pisarra {\it et al.}, arXiv:1306.6273, 2013]. By the {\em fully dynamic} density-functional perturbation theory approach, we demonstrate a strong coupling of the acoustic plasmonic mode to lattice vibrations. Thereby, the acoustic plasmon in graphene does not exist as an isolated excitation, but it is rather bound into a combined plasmon-phonon mode. We show that the coupling provides a mechanism for the {\em bidirectional} energy exchange between the electronic and the ionic subsystems with fundamentally, as well as practically, important implications for the lattice cooling and heating by electrons in graphene.
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Submitted 10 October, 2013;
originally announced October 2013.
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Conduction in jammed systems of tetrahedra
Authors:
Kyle C. Smith,
Timothy S. Fisher
Abstract:
Control of transport processes in composite microstructures is critical to the development of high performance functional materials for a variety of energy storage applications. The fundamental process of conduction and its control through the manipulation of granular composite attributes (e.g., grain shape) are the subject of this work. We show that athermally jammed packings of tetrahedra with u…
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Control of transport processes in composite microstructures is critical to the development of high performance functional materials for a variety of energy storage applications. The fundamental process of conduction and its control through the manipulation of granular composite attributes (e.g., grain shape) are the subject of this work. We show that athermally jammed packings of tetrahedra with ultra-short range order exhibit fundamentally different pathways for conduction than those in dense sphere packings. Highly resistive granular constrictions and few face-face contacts between grains result in short-range distortions from the mean temperature field. As a consequence, 'granular' or differential effective medium theory predicts the conductivity of this media within 10% at the jamming point; in contrast, strong enhancement of transport near interparticle contacts in packed-sphere composites results in conductivity divergence at the jamming onset. The results are expected to be particularly relevant to the development of nanomaterials, where nanoparticle building blocks can exhibit a variety of faceted shapes.
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Submitted 13 June, 2012;
originally announced June 2012.
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Models for Metal Hydride Particle Shape, Packing, and Heat Transfer
Authors:
Kyle C. Smith,
Timothy S. Fisher
Abstract:
A multiphysics modeling approach for heat conduction in metal hydride powders is presented, including particle shape distribution, size distribution, granular packing structure, and effective thermal conductivity. A statistical geometric model is presented that replicates features of particle size and shape distributions observed experimentally that result from cyclic hydride decreptitation. The q…
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A multiphysics modeling approach for heat conduction in metal hydride powders is presented, including particle shape distribution, size distribution, granular packing structure, and effective thermal conductivity. A statistical geometric model is presented that replicates features of particle size and shape distributions observed experimentally that result from cyclic hydride decreptitation. The quasi-static dense packing of a sample set of these particles is simulated via energy-based structural optimization methods. These particles jam (i.e., solidify) at a density (solid volume fraction) of 0.665+/-0.015 - higher than prior experimental estimates. Effective thermal conductivity of the jammed system is simulated and found to follow the behavior predicted by granular effective medium theory. Finally, a theory is presented that links the properties of bi-porous cohesive powders to the present systems based on recent experimental observations of jammed packings of fine powder. This theory produces quantitative experimental agreement with metal hydride powders of various compositions.
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Submitted 4 May, 2012;
originally announced May 2012.
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Mechanism of Thermal Conductivity Reduction in Few-Layer Graphene
Authors:
Dhruv Singh,
Jayathi Y. Murthy,
Timothy S. Fisher
Abstract:
Using the linearized Boltzmann transport equation and perturbation theory, we analyze the reduction in the intrinsic thermal conductivity of few-layer graphene sheets accounting for all possible three-phonon scattering events. Even with weak coupling between layers, a significant reduction in the thermal conductivity of the out-of-plane acoustic modes is apparent. The main effect of this weak coup…
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Using the linearized Boltzmann transport equation and perturbation theory, we analyze the reduction in the intrinsic thermal conductivity of few-layer graphene sheets accounting for all possible three-phonon scattering events. Even with weak coupling between layers, a significant reduction in the thermal conductivity of the out-of-plane acoustic modes is apparent. The main effect of this weak coupling is to open many new three-phonon scattering channels that are otherwise absent in graphene. However, reflection symmetry is only weakly broken with the addition of multiple layers, and ZA phonons still dominate thermal conductivity. We also find that reduction in thermal conductivity is mainly caused by lower contributions of the higher-order overtones of the fundamental out-of-plane acoustic mode. The results compare remarkably well over the entire temperature range with measurements of graphene and graphite.
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Submitted 26 April, 2011;
originally announced April 2011.
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Isostaticity of Constraints in Jammed Systems of Soft Frictionless Platonic Solids
Authors:
Kyle C. Smith,
Meheboob Alam,
Timothy S. Fisher
Abstract:
The average number of constraints per particle $< C_{total} >$ in mechanically stable systems of Platonic solids (except cubes) approaches the isostatic limit at the jamming point ($< C_{total} > \rightarrow 12$), though average number of contacts are hypostatic. By introducing angular alignment metrics to classify the degree of constraint imposed by each contact, constraints are shown to arise as…
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The average number of constraints per particle $< C_{total} >$ in mechanically stable systems of Platonic solids (except cubes) approaches the isostatic limit at the jamming point ($< C_{total} > \rightarrow 12$), though average number of contacts are hypostatic. By introducing angular alignment metrics to classify the degree of constraint imposed by each contact, constraints are shown to arise as a direct result of local orientational order reflected in edge-face and face-face alignment angle distributions. With approximately one face-face contact per particle at jamming chain-like face-face clusters with finite extent form in these systems.
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Submitted 28 June, 2011; v1 submitted 26 April, 2011;
originally announced April 2011.
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Dopant-vacancy binding effects in Li-doped magnesium hydride
Authors:
Kyle C. Smith,
Timothy S. Fisher,
Umesh V. Waghmare,
Ricardo Grau-Crespo
Abstract:
We use a combination of ab initio calculations and statistical mechanics to investigate the substitution of Li+ for Mg2+ in magnesium hydride (MgH2) accompanied by the formation of hydrogen vacancies with positive charge (with respect to the original ion at the site). We show here that the binding energy between dopants and vacancy defects leads to a significant fraction of trapped vacancies and t…
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We use a combination of ab initio calculations and statistical mechanics to investigate the substitution of Li+ for Mg2+ in magnesium hydride (MgH2) accompanied by the formation of hydrogen vacancies with positive charge (with respect to the original ion at the site). We show here that the binding energy between dopants and vacancy defects leads to a significant fraction of trapped vacancies and therefore a dramatic reduction of the number of free vacancies available for diffusion. The concentration of free vacancies initially increases with dopant concentration, but reaches a maximum at around 1 mol% Li do** and slowly decreases with further do**. At the optimal level of do**, the corresponding concentration of free vacancies is much higher than the equilibrium concentrations of charged and neutral vacancies in pure MgH2 at typical hydrogen storage conditions. We also show that Li-doped MgH2 is thermodynamically metastable with respect to phase separation into pure magnesium and lithium hydrides at any significant Li concentration, even after considering the stabilization provided by dopant-vacancy interactions and configurational entropic effects. Our results suggest that lithium do** may enhance hydrogen diffusion hydride, but only to a limited extent determined by an optimal dopant concentration and conditioned to the stability of the doped phase.
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Submitted 24 September, 2010;
originally announced September 2010.
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Athermal jamming of soft frictionless Platonic solids
Authors:
Kyle C. Smith,
Meheboob Alam,
Timothy S. Fisher
Abstract:
A mechanically-based structural optimization method is utilized to explore the phenomena of jamming for assemblies of frictionless Platonic solids. Systems of these regular convex polyhedra exhibit mechanically stable phases with density substantially less than optimal for a given shape, revealing that thermal motion is necessary to access high density phases. We confirm that the large system jamm…
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A mechanically-based structural optimization method is utilized to explore the phenomena of jamming for assemblies of frictionless Platonic solids. Systems of these regular convex polyhedra exhibit mechanically stable phases with density substantially less than optimal for a given shape, revealing that thermal motion is necessary to access high density phases. We confirm that the large system jamming threshold of $0.623 \pm 0.003$ for tetrahedra is consistent with experiments on tetrahedral dice. Also, the extremely short-ranged translational correlations of packed tetrahedra observed in experiments are confirmed here, in contrast with those of thermally simulated glasses. Though highly ordered phases are observed to form for small numbers of cubes and dodecahedra, the short correlation length scale suppresses ordering in large systems, resulting in packings that are mechanically consistent with `orientationally disordered' contacts (point-face and edge-edge contacts). Mild nematic ordering is observed for large systems of cubes, whereas angular correlations for the remaining shapes are ultra short-ranged. Power-law scaling exponents for energy with respect to distance from the jamming threshold exhibit a clear dependence on the `highest order' percolating contact topology. These nominal exponents are 6, 4, and 2 for configurations having percolating point-face (or edge-edge), edge-face, and face-face contacts, respectively. These Platonic solids exhibit hypostatic behavior, with average jamming contact number between the isostatic value for spheres and that of asymmetric particles. These shapes violate the isostatic conjecture, displaying contact number that decreases monotonically with sphericity. The common symmetry of dual polyhedra results in local translational structural similarity. (Note abstract abridged due to length constraint)
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Submitted 18 November, 2010; v1 submitted 14 August, 2010;
originally announced August 2010.
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Effect of phonon dispersion on thermal conduction across Si/Ge interfaces
Authors:
Dhruv Singh,
Jayathi Y. Murthy,
Timothy S. Fisher
Abstract:
We report finite-volume simulations of the phonon Boltzmann transport equation (BTE) for heat conduction across the heterogeneous interfaces in SiGe superlattices. The diffuse mismatch model incorporating phonon dispersion and polarization is implemented over a wide range of Knudsen numbers. The results indicate that the thermal conductivity of a Si/Ge superlattice is much lower than that of the c…
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We report finite-volume simulations of the phonon Boltzmann transport equation (BTE) for heat conduction across the heterogeneous interfaces in SiGe superlattices. The diffuse mismatch model incorporating phonon dispersion and polarization is implemented over a wide range of Knudsen numbers. The results indicate that the thermal conductivity of a Si/Ge superlattice is much lower than that of the constitutive bulk materials for superlattice periods in the submicron regime. We report results for effective thermal conductivity of various material volume fractions and superlattice periods. Details of the non-equilibrium energy exchange between optical and acoustic phonons that originate from the mismatch of phonon spectra in silicon and germanium are delineated for the first time. Conditions are identified for which this effect can produce significantly more thermal resistance than that due to boundary scattering of phonons.
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Submitted 14 May, 2010;
originally announced May 2010.
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Thermodynamics of hydrogen vacancies in MgH2 from first-principles calculations and grand-canonical statistical mechanics
Authors:
R. Grau-Crespo,
K. C. Smith,
T. S. Fisher,
N. H. de Leeuw,
U. V. Waghmare
Abstract:
Ab initio calculations and statistical mechanics are combined to elucidate the thermodynamics of H vacancies in MgH2. A general method based on a grand-canonical ensemble of defect configurations is introduced to model the exchange of hydrogen between crystalline MgH2 and gas-phase H2. We find that, at temperatures and hydrogen partial pressures of practical interest, MgH2 is capable of accommod…
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Ab initio calculations and statistical mechanics are combined to elucidate the thermodynamics of H vacancies in MgH2. A general method based on a grand-canonical ensemble of defect configurations is introduced to model the exchange of hydrogen between crystalline MgH2 and gas-phase H2. We find that, at temperatures and hydrogen partial pressures of practical interest, MgH2 is capable of accommodating only very small concentrations of hydrogen vacancies, which consist mainly of isolated defects rather than vacancy clusters, contrary to what is expected from a simple energetic analysis.
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Submitted 22 October, 2009;
originally announced October 2009.
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Extraordinary sensitivity of the electronic structure and properties of single-walled carbon nanotubes to molecular charge-transfer
Authors:
Rakesh Voggu,
Chandra Sekhar Rout,
Aaron D. Franklin,
Timothy S. Fisher,
C. N. R. Rao
Abstract:
Interaction of single-walled carbon nanotubes with electron donor and acceptor molecules causes significant changes in the electronic and Raman spectra, the relative proportion of the metallic species increasing on electron donation through molecular charge transfer, as also verified by electrical resistivity measurements.
Interaction of single-walled carbon nanotubes with electron donor and acceptor molecules causes significant changes in the electronic and Raman spectra, the relative proportion of the metallic species increasing on electron donation through molecular charge transfer, as also verified by electrical resistivity measurements.
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Submitted 27 May, 2008;
originally announced May 2008.
