Showing 1–26 of 26 results for author: Ferrus, T

Pulse-controlled qubit in semiconductor double quantum dots

Authors: Aleksander Lasek, Hugo V. Lepage, Kexin Zhang, Thierry Ferrus, Crispin H. W. Barnes

Abstract: We present a numerically-optimized multipulse framework for the quantum control of a single-electron charge qubit. Our framework defines a set of pulse sequences, necessary for the manipulation of the ideal qubit basis, that avoids errors associated with excitations outside the computational subspace. A novel control scheme manipulates the qubit adiabatically, while also retaining high speed and a… ▽ More We present a numerically-optimized multipulse framework for the quantum control of a single-electron charge qubit. Our framework defines a set of pulse sequences, necessary for the manipulation of the ideal qubit basis, that avoids errors associated with excitations outside the computational subspace. A novel control scheme manipulates the qubit adiabatically, while also retaining high speed and ability to perform a general single-qubit rotation. This basis generates spatially localized logical qubit states, making readout straightforward. We consider experimentally realistic semiconductor qubits with finite pulse rise and fall times and determine the fastest pulse sequence yielding the highest fidelity. We show that our protocol leads to improved control of a qubit. We present simulations of a double quantum dot in a semiconductor device to visualize and verify our protocol. These results can be generalized to other physical systems since they depend only on pulse rise and fall times and the energy gap between the two lowest eigenstates. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 9 pages, 9 figures

Engineering single donor detectors in doped silicon

Authors: A. A. Lasek, C. H. W. Barnes, T. Ferrus

Abstract: We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier w… ▽ More We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier with either a single or a doubly occupancy. Such a model is well supported by capacitance-based simulations. Ability of using the D0 of such isolated donor as a charge detector is demonstrated by observing the charge stability diagram of a nearby and capacitively coupled semi-connected double quantum dot. △ Less

Submitted 1 September, 2022; v1 submitted 21 November, 2021; originally announced November 2021.

Comments: 10 pages, supplementary information available on demand, new version as accepted for publication in PRB

4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot

Authors: Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Shigenori Murakami, Takahiro Mori, Thierry Ferrus, Tetsuo Kodera

Abstract: We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2\,K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the pre… ▽ More We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2\,K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi-qubit platforms. △ Less

Submitted 8 November, 2021; v1 submitted 11 May, 2021; originally announced May 2021.

Journal ref: Sci Rep 11, 20039 (2021)

Dirac Quantum Wells at Domain Walls in Antiferromagnetic Topological Insulators

Authors: N. B. Devlin, T. Ferrus, C. H. W. Barnes

Abstract: We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetisation. We show, in the framework of quantum well physics, that by tuning the width of a domain wall one can control the functional form of the bound states appearing across it. Furthermore, we demonstrate the effect that… ▽ More We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetisation. We show, in the framework of quantum well physics, that by tuning the width of a domain wall one can control the functional form of the bound states appearing across it. Furthermore, we demonstrate the effect that the parity of the number of layers in a multilayer sample has on the electronic dispersion. In particular, the alignment of the magnetisation vectors on the terminating surfaces of odd layer samples affords particle-hole symmetry leading to the presence of linearly dispersing topologically non-trivial states around $E = 0$. By contrast, the lack of particle-hole symmetry in even layer samples results in a gapped system, with spin-polarised flat-bands appearing either side of a band gap, with characteristic energy well within terahertz energy scales. In addition to being a versatile platform for the development of spintronic devices, when many-body interactions are accounted for we predict that these flat-bands will host strong correlations capable of driving the system into novel topological phases. △ Less

Submitted 1 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. B 104, 054433 (2021)

Invariant subspaces of two-qubit quantum gates and their application in the verification of quantum computers

Authors: Yordan S. Yordanov, Jacob Chevalier-Drori, Thierry Ferrus, Matthew Applegate, Crispin H. W. Barnes

Abstract: We investigate the groups generated by the sets of $CP$, $CNOT$ and $SWAP^α$ (power-of-SWAP) quantum gate operations acting on $n$ qubits. Isomorphisms to standard groups are found, and using techniques from representation theory, we are able to determine the invariant subspaces of the $n-$qubit Hilbert space under the action of each group. For the $CP$ operation, we find isomorphism to the direct… ▽ More We investigate the groups generated by the sets of $CP$, $CNOT$ and $SWAP^α$ (power-of-SWAP) quantum gate operations acting on $n$ qubits. Isomorphisms to standard groups are found, and using techniques from representation theory, we are able to determine the invariant subspaces of the $n-$qubit Hilbert space under the action of each group. For the $CP$ operation, we find isomorphism to the direct product of $n(n-1)/2$ cyclic groups of order $2$, and determine $2^n$ $1$-dimensional invariant subspaces corresponding to the computational state-vectors. For the $CNOT$ operation, we find isomorphism to the general linear group of an $n$-dimensional space over a field of $2$ elements, $GL(n,2)$, and determine two $1$-dimensional invariant subspaces and one $(2^n-2)$-dimensional invariant subspace. For the $SWAP^α$ operation we determine a complex structure of invariant subspaces with varying dimensions and occurrences and present a recursive procedure to construct them. As an example of an application for our work, we suggest that these invariant subspaces can be used to construct simple formal verification procedures to assess the operation of quantum computers of arbitrary size. △ Less

Submitted 9 September, 2020; v1 submitted 8 September, 2020; originally announced September 2020.

An optimal single-electron charge qubit for solid-state double quantum dots

Authors: J. Mosakowski, E. T. Owen, T. Ferrus, D. A. Williams, M. C. Dean, C. H. W. Barnes

Abstract: We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU accelerated numerical solutions to the time-dependent Schrödinger equation. The optimal qubit is found to have basis states defined as the symmetric and antisymmetric linear combinations of the lowest energy bonding and an… ▽ More We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU accelerated numerical solutions to the time-dependent Schrödinger equation. The optimal qubit is found to have basis states defined as the symmetric and antisymmetric linear combinations of the lowest energy bonding and anti-bonding states of the DQD at zero bias. In contrast to charge qubits defined by the two localised ground states of the uncoupled DQD, this choice of the basis causes the resulting dynamics to have a maximal overlap with an idealised two-state model. Our optimal qubit basis states are not localised to a single quantum dot and, as such, initialising the qubit requires a particular sequence of gate pulses to take the system from an initial fiducial state of the DQD to the logical $0$ or $1$. We determine this sequence using pulses that incorporate the expected experimental finite rise times. We also show how to perform arbitrary single qubit operations on the Bloch sphere using spin-echo type pulsing, allowing us to obtain any qubit state with at most two single pulses. Measurement of the optimal qubits is achieved by determining the probability of finding the electron in one of the dots. △ Less

Submitted 16 March, 2016; originally announced March 2016.

Comments: 9 pages, 6 figures

Protocol for Fermionic Positive-Operator-Valued Measures

Authors: David R. M. Arvidsson-Shukur, Hugo V. Lepage, Edmund T. Owen, Thierry Ferrus, Crispin H. W. Barnes

Abstract: In this paper we present a protocol for the implementation of a positive-operator-valued measure (POVM) on massive fermionic qubits. We present methods for implementing non-dispersive qubit transport, spin rotations and spin polarizing beam-splitter operations. Our scheme attains linear optics-like control of the spatial extent of the qubits by considering groundstate electrons trapped in the mini… ▽ More In this paper we present a protocol for the implementation of a positive-operator-valued measure (POVM) on massive fermionic qubits. We present methods for implementing non-dispersive qubit transport, spin rotations and spin polarizing beam-splitter operations. Our scheme attains linear optics-like control of the spatial extent of the qubits by considering groundstate electrons trapped in the minima of surface acoustic waves in semiconductor heterostructures. Furthermore, we numerically simulate a high-fidelity POVM that carries out Procrustean entanglement distillation in the framework of our scheme, using experimentally realistic potentials. Our protocol can be applied, not only to pure ensembles with particle pairs of known identical entanglement, but also to realistic ensembles of particle pairs with a distribution of entanglement entropies. This paper provides an experimentally realisable design for future quantum technologies. △ Less

Submitted 20 October, 2017; v1 submitted 3 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. A 96, 052305 (2017)

GHz photon-activated hop** between localized states in a silicon quantum dot

Authors: T. Ferrus, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda, D. A. Williams

Abstract: We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to… ▽ More We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to optically control and operate electrically isolated structures by microwave pulses. In quantum computing architectures, these results may lead to the use of microwave multiplexing to manipulate quantum states in a multi-qubit configuration. △ Less

Submitted 19 December, 2013; originally announced December 2013.

Comments: New Journal of Physics, in press

Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots

Authors: M. F. Gonzalez-Zalba, J. Galibert, F. Iacovella, D. Williams, T. Ferrus

Abstract: We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length becomes comparable to the effective Bohr radius of ph… ▽ More We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length becomes comparable to the effective Bohr radius of phosphorous in silicon, a strong decrease in conductance is demonstrated. Data in the high and low electric field bias regimes are then compared to show that close to the Coulomb blockade edge magnetically-induced quenching to single donors in the quantum dot is achieved at about 40 T. △ Less

Submitted 18 November, 2013; originally announced November 2013.

Comments: accepted for publication at Current Applied Physics

Electron temperature in electrically isolated Si double quantum dots

Authors: A. Rossi, T. Ferrus, D. A. Williams

Abstract: Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate… ▽ More Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. △ Less

Submitted 22 February, 2012; v1 submitted 14 December, 2011; originally announced December 2011.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 100, 133503 (2012)

Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

Authors: T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, S. Oda

Abstract: We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow… ▽ More We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed. △ Less

Submitted 25 April, 2012; v1 submitted 22 September, 2011; originally announced September 2011.

Comments: 15 pages

Journal ref: AIP Advances 2, 2, 022114 (2012)

Detection of variable tunneling rates in silicon quantum dots

Authors: A. Rossi, T. Ferrus, W. Lin, T. Kodera, D. A. Williams, S. Oda

Abstract: Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that th… ▽ More Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that this architecture can be operated to reveal asymmetries in the transport characteristic of the QD. Indeed, the observation of gate voltage shifts in the detector's response as the QD bias is changed is an indication of variable tunneling rates. △ Less

Submitted 14 February, 2011; originally announced February 2011.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 98, 133506 (2011)

Charge Detection in Phosphorus-doped Silicon Double Quantum Dots

Authors: A. Rossi, T. Ferrus, G. J. Podd, D. A. Williams

Abstract: We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measurements performed at 4.2K show step-like behaviour and shifts of the Coulomb Blockade oscillations in the detector's current as the reservoir's potential… ▽ More We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measurements performed at 4.2K show step-like behaviour and shifts of the Coulomb Blockade oscillations in the detector's current as the reservoir's potential is swept. By means of a classical capacitance model, we demonstrate that the observed features can be used to detect single-electron tunnelling from, to and within the DQD, as well as to reveal the DQD charge occupancy. △ Less

Submitted 9 August, 2010; originally announced August 2010.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 97, 223506 (2010)

Detection of charge motion in a non-metallic silicon isolated double quantum dot

Authors: T. Ferrus, A. Rossi, M. Tanner, G. Podd, P. Chapman, D. A. Williams

Abstract: As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here we have investigated the mechanism behind the detection of electron motion… ▽ More As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here we have investigated the mechanism behind the detection of electron motion inside an electrically isolated double quantum dot that is capacitively coupled to a single electron transistor, both fabricated from highly phosphorous doped silicon wafers. Despite, the absence of a direct charge transfer between the detector and the double dot structure, an efficient detection is obtained. In particular, unusually large Coulomb peak shifts in gate voltage are observed. Results are explained in terms of charge rearrangement and the presence of inelastic cotunneling via states at the periphery of the single electron transistor dot. △ Less

Submitted 14 October, 2011; v1 submitted 15 July, 2009; originally announced July 2009.

Journal ref: New J. Phys. 13, 10, 103012 (2011)

Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

Authors: T. Kodera, T. Ferrus, T. Nakaoka, G. Podd, M. Tanner, D. Williams, Y. Arakawa

Abstract: We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor (LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and bot… ▽ More We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor (LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel. △ Less

Submitted 8 May, 2009; originally announced May 2009.

Comments: 5 pages, 4 figures, to appear in Jpn. J. Appl. Phys

Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

Authors: T. Ferrus, D. G. Hasko, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, G. A. D. Briggs

Abstract: We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosp… ▽ More We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosphorous-doped single-electron transistor. A single-shot technique is successfully implemented and used to observe the real time decay of a quantum state. A discussion on various measurement strategies is presented and the consequences on electron heating and noise are analysed. △ Less

Submitted 2 June, 2010; v1 submitted 21 April, 2009; originally announced April 2009.

Comments: 18 pages, 6 figures, published in J. Appl. Phys

Journal ref: J. Appl. Phys. 106, 033705 (2009)

Single shot measurement of a silicon single electron transistor

Authors: D. G. Hasko, T. Ferrus, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, G. A. D. Briggs

Abstract: We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pu… ▽ More We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90 us are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing. △ Less

Submitted 21 November, 2008; v1 submitted 5 November, 2008; originally announced November 2008.

Journal ref: Appl. Phys. Lett. 93, 19, 192116 (2008)

Study and characterization by magnetophonon resonance of the energy structuring in GaAs/AlAs quantum-wire superlattices

Authors: T. Ferrus, B. Goutiers, L. Ressier, J. P. Peyrade, J. Galibert, J. A. Porto, J. Sanchez-dehesa

Abstract: We present the characterization of the band structure of GaAs/AlAs quantum-wire 1D superlattices performed by magnetophonon resonance with pulsed magnetic fields up to 35 T. The samples, generated by the "atomic saw method" from original quantum-well 2D superlattices, underwent substantial modifications of their energy bands built up on the X-states of the bulk. We have calculated the band struc… ▽ More We present the characterization of the band structure of GaAs/AlAs quantum-wire 1D superlattices performed by magnetophonon resonance with pulsed magnetic fields up to 35 T. The samples, generated by the "atomic saw method" from original quantum-well 2D superlattices, underwent substantial modifications of their energy bands built up on the X-states of the bulk. We have calculated the band structure by a finite element method and we have studied the various miniband structures built up of the masses m_t and m_l of GaAs and AlAs at the point X. From an experimental point of view, the main result is that in the 2D case we observe only resonances when the magnetic field B is applied along the growth axis whereas in the 1D case we obtain resonances in all magnetic field configurations. The analysis of the maxima (or minima for B // E) in the resistivity rho_xy as a function of B allows us to account, qualitatively and semi-quantitatively, for the band structure theoretically expected. △ Less

Submitted 14 August, 2007; originally announced August 2007.

Journal ref: Superlattices and Microstructures, 25, 1-2, p 213 (1999)

Broadening processes in GaAs delta-doped quantum wire superlattices

Authors: T. Ferrus, B. Goutiers, J. Galibert, F. Michelini

Abstract: We use both Quantum Hall and Shubnikov de Haas experiments at high magnetic field and low temperature to analyse broadening processes of Landau levels in a delta-doped 2D quantum well superlattice and a 1D quantum wire superlattice generated from the first one by controlled dislocation slips. We deduce first the origin of the broadening from the dam** factor in the Shubnikov de Haas curves in… ▽ More We use both Quantum Hall and Shubnikov de Haas experiments at high magnetic field and low temperature to analyse broadening processes of Landau levels in a delta-doped 2D quantum well superlattice and a 1D quantum wire superlattice generated from the first one by controlled dislocation slips. We deduce first the origin of the broadening from the dam** factor in the Shubnikov de Haas curves in various configurations of the magnetic field and the measured current for both kinds of superlattice. Then, we write a general formula for the resistivity in the Quantum Hall effect introducing a dephasing factor we link to the process of localization. △ Less

Submitted 13 August, 2007; originally announced August 2007.

Journal ref: Superlattices and Microstructures, 30, 4, p 215 (2001)

Optimized minigaps for negative differential resistance creation in strongly delta-doped (1D) superlattices

Authors: T. Ferrus, B. Goutiers, L. Ressier, J. P. Peyrade, J. A. Porto, J. Sanchez-dehesa

Abstract: The "atomic saw method" uses the passage of dislocations in two-dimensional (2D) quantum-well superlattices to create periodic slip** layers and one-dimensional (1D) quantum wire superlattices. The effects of this space structuring of the samples on the allowed energies are analysed in the case of GaAs d-doped superlattices. If they are sufficiently large, the various minigaps appearing in the… ▽ More The "atomic saw method" uses the passage of dislocations in two-dimensional (2D) quantum-well superlattices to create periodic slip** layers and one-dimensional (1D) quantum wire superlattices. The effects of this space structuring of the samples on the allowed energies are analysed in the case of GaAs d-doped superlattices. If they are sufficiently large, the various minigaps appearing in the 1D band structure could be responsible for the presence of negative differential resistance (NDR) with high critical current in these systems. The purpose is to determine the evolution of the minigaps in terms of the sample parameters and to obtain the means to determine both the 2D and 1D structural characteristics where NDR could appear. △ Less

Submitted 13 August, 2007; originally announced August 2007.

Comments: see erratum 10.1006/spmi.1998.0702

Journal ref: Superlattices and Microstructures, 25, 1-2, p 431 (1998)

GaAs delta-doped quantum wire superlattice characterization by quantum Hall effect and Shubnikov de Haas oscillations

Authors: T. Ferrus, B. Goutiers, J. Galibert, L. Ressier, J. P. Peyrade

Abstract: Quantum wire superlattices (1D) realized by controlled dislocation slip** in quantum well superlattices (2D) (atomic saw method) have already shown magnetophonon oscillations. This effect has been used to investigate the electronic properties of such systems and prove the quantum character of the physical properties of the wires. By cooling the temperature and using pulsed magnetic field up to… ▽ More Quantum wire superlattices (1D) realized by controlled dislocation slip** in quantum well superlattices (2D) (atomic saw method) have already shown magnetophonon oscillations. This effect has been used to investigate the electronic properties of such systems and prove the quantum character of the physical properties of the wires. By cooling the temperature and using pulsed magnetic field up to 35 T, we have observed both quantum Hall effect (QHE) and Shubnikov de Haas (SdH) oscillations for various configurations of the magnetic field. The effective masses deduced from the values of the fundamental fields are coherent with those obtained with magnetophonon effect. The field rotation induces a change in the resonance frequencies due to the modification of the mass tensor as in a (3D) electron gas. In view the QHE, the plateaus observed in rho_yz are dephased relatively to rho_zz minima which seems to be linked to the dephasing of the minima of the density of states of the broadened Landau levels. △ Less

Submitted 13 August, 2007; originally announced August 2007.

Journal ref: Superlattices and Microstructures, 29, 2, p 99 (2001)

Variation of the hop** exponent in disordered silicon MOSFETs

Authors: T. Ferrus, R. George, C. H. W. Barnes, N. Lumpkin, D. J. Paul, M. Pepper

Abstract: We observe a complex change in the hop** exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measuremen… ▽ More We observe a complex change in the hop** exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measurements are compatible with a change in transport mechanisms when either the disorder or the electron density is modified suggesting a possible transition from a Mott insulator to an Anderson insulator in these systems. △ Less

Submitted 26 September, 2008; v1 submitted 29 May, 2007; originally announced May 2007.

Comments: 6 pages, 5 figures

Journal ref: J. Phys.: Condens. Matter 20, 415226 (2008)

Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

Authors: T. Ferrus, R. George, C. H. W. Barnes, M. Pepper

Abstract: We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room tempe… ▽ More We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room temperature, it is possible to move them with the application of a suitable electric field. We show that, in this configuration, such a device can be used to control both the disorder and the electron-electron interaction strength at the Si-SiO2 interface. △ Less

Submitted 11 October, 2010; v1 submitted 8 December, 2005; originally announced December 2005.

Comments: 3 pages, 2 figures

Journal ref: Appl. Phys. Lett. 97, 14, 142108 (2010)

Magnetoconductivity of Hubbard bands induced in Silicon MOSFETs

Authors: T. Ferrus, R. George, C. H. W. Barnes, N. Lumpkin, D. J. Paul, M. Pepper

Abstract: Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of… ▽ More Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band. △ Less

Submitted 11 October, 2007; v1 submitted 6 December, 2005; originally announced December 2005.

Comments: In press in Physica B

Journal ref: Physica B 400, 218 (2007)

Activation mechanisms in sodium-doped Silicon MOSFETs

Authors: T. Ferrus, R. George, C. H. W. Barnes, N. Lumpkin, D. J. Paul, M. Pepper

Abstract: We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper ba… ▽ More We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given. △ Less

Submitted 16 May, 2007; v1 submitted 2 December, 2005; originally announced December 2005.

Comments: published in J. Phys. : Condens. Matter

Journal ref: J. Phys.: Condens. Matter 19, 226216 (2007)

Evidence for multiple impurity bands in sodium-doped silicon MOSFETs

Authors: T. Ferrus, R. George, C. H. W. Barnes, N. Lumpkin, D. J. Paul, M. Pepper

Abstract: We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length… ▽ More We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature. △ Less

Submitted 13 April, 2006; v1 submitted 6 October, 2005; originally announced October 2005.

Comments: 4 pages; 5 figures; Published in PRB Rapid-Communications

Journal ref: Phys. Rev. B 73, 4, 041304 (2006)