Effect of Al content on the hardness and thermal stability study of AlTiN and AlTiBN coatings deposited by HiPIMS
Authors:
A. Mendez,
M. A. Monclus,
J. A. Santiago,
I. Fernandez-Martinez,
T. C. Rojas,
J. Garcia-Molleja,
M. Avella,
N. Dams,
M. Panizo-Laiz,
J. M. Molina-Aldareguia
Abstract:
The microstructure, mechanical properties and thermal stability of AlTiN and AlTiBN coatings grown by reactive high-power impulse magnetron sputtering (HiPIMS) have been analyzed as a function of Al/(Al+Ti) ratio, x, between 0.5 and 0.8. The coatings were predominantly formed by a face-centered cubic Ti(Al)N crystalline phase, both with and without B, even for x ratios as high as 0.6, which is hig…
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The microstructure, mechanical properties and thermal stability of AlTiN and AlTiBN coatings grown by reactive high-power impulse magnetron sputtering (HiPIMS) have been analyzed as a function of Al/(Al+Ti) ratio, x, between 0.5 and 0.8. The coatings were predominantly formed by a face-centered cubic Ti(Al)N crystalline phase, both with and without B, even for x ratios as high as 0.6, which is higher than the ratio typically encountered for AlTiN coatings deposited by reactive magnetron sputtering. B do**, in combination with the highly energetic deposition conditions offered by HiPIMS, results in the suppression of the columnar grain morphology typically encountered in AlTiN coatings. On the contrary, the AlTiBN coatings grown by HiPIMS present a dense nanocomposite type microstructure, formed by nanocrystalline Ti(Al)N domains and amorphous regions composed of Ti(Al)B2 and BN. As a result, high-Al content (x>0.6) AlTiBN coatings grown by HiPIMS offer higher hardness, elasticity and fracture toughness than AlTiN coatings. Moreover, the thermal stability and the hot hardness are substantially enhanced, delaying the onset of formation of the detrimental hexagonal AlN phase from 850 C in the case of AlTiN, to 1000 C in the case of AlTiBN.
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Submitted 16 July, 2021;
originally announced July 2021.
Charge control in laterally coupled double quantum dots
Authors:
G. Muñoz-Matutano,
M. Royo,
J. I. Climente,
J. Canet-Ferrer,
D. Fuster,
P. Alonso-González,
I. Fernández-Martínez,
J. Martínez-Pastor,
Y. González,
L. González,
F. Briones,
B. Alén
Abstract:
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts whi…
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We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunnelling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.
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Submitted 20 September, 2011; v1 submitted 26 April, 2011;
originally announced April 2011.
Electrical control of a laterally ordered InAs/InP quantum dash array
Authors:
B. Alen,
D. Fuster,
I. Fernandez-Martinez,
J. Martinez-Pastor,
Y. Gonzalez,
F. Briones,
L. Gonzalez
Abstract:
We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with p…
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We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with performance limited by the size inhomogeneity of the self-assembling process.
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Submitted 16 November, 2009; v1 submitted 4 March, 2008;
originally announced March 2008.
