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Setups for eliminating static charge of the ATLAS18 strip sensors
Authors:
P. Federicova,
A. Affolder,
G. A. Beck,
A. J. Bevand,
Z. Chen,
I. Dawson,
A. Deshmukh,
A. Dowling,
V. Fadeyev,
J. Fernandez-Tejero,
A. Fournier,
N. Gonzalez,
L. Hommels,
C. Jessiman,
S. Kachiguin,
Ch. Klein,
T. Koffas,
J. Kroll,
V. Latonova,
M. Mikestikova,
P. S. Miyagawa,
S. O'Toole,
Q. Paddock,
L. Poley,
E. Staats
, et al. (5 additional authors not shown)
Abstract:
Construction of the new all-silicon Inner Tracker (ITk), developed by the ATLAS collaboration for the High Luminosity LHC, started in 2020 and is expected to continue till 2028. The ITk detector will include 18,000 highly segmented and radiation hard n+-in-p silicon strip sensors (ATLAS18), which are being manufactured by Hamamatsu Photonics. Mechanical and electrical characteristics of produced s…
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Construction of the new all-silicon Inner Tracker (ITk), developed by the ATLAS collaboration for the High Luminosity LHC, started in 2020 and is expected to continue till 2028. The ITk detector will include 18,000 highly segmented and radiation hard n+-in-p silicon strip sensors (ATLAS18), which are being manufactured by Hamamatsu Photonics. Mechanical and electrical characteristics of produced sensors are measured upon their delivery at several institutes participating in a complex Quality Control (QC) program. The QC tests performed on each individual sensor check the overall integrity and quality of the sensor. During the QC testing of production ATLAS18 strip sensors, an increased number of sensors that failed the electrical tests was observed. In particular, IV measurements indicated an early breakdown, while large areas containing several tens or hundreds of neighbouring strips with low interstrip isolation were identified by the Full strip tests, and leakage current instabilities were measured in a long-term leakage current stability setup. Moreover, a high surface electrostatic charge reaching a level of several hundreds of volts per inch was measured on a large number of sensors and on the plastic sheets, which mechanically protect these sensors in their paper envelopes. Accumulated data indicates a clear correlation between observed electrical failures and the sensor charge-up. To mitigate the above-described issues, the QC testing sites significantly modified the sensor handling procedures and introduced sensor recovery techniques based on irradiation of the sensor surface with UV light or application of intensive flows of ionized gas. In this presentation, we will describe the setups implemented by the QC testing sites to treat silicon strip sensors affected by static charge and evaluate the effectiveness of these setups in terms of improvement of the sensor performance.
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Submitted 18 December, 2023; v1 submitted 27 September, 2023;
originally announced September 2023.
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A Starry Byte -- proton beam measurements of single event upsets and other radiation effects in ABCStar ASIC Versions 0 and 1 for the ITk strip tracker
Authors:
M. J. Basso,
J. Fernandez-Tejero,
B. J. Gallop,
G. Greig,
J. J. John,
P. T. Keener,
K. Krizka,
P. V. Leitao,
B. Norman,
P. W. Phillips,
L. Poley,
C. Sawyer,
T. L. Stack,
S. Stucci,
D. A. Trischuk,
M. Warren
Abstract:
Single Event Effects (SEEs) - predominately bit-flips in electronics caused by particle interactions - are a major concern for ASICs operated in high radiation environments such as ABCStar ASICs, which are designed to be used in the future ATLAS ITk strip tracker. The chip design is therefore optimised to protect it from SEEs by implementing triplication techniques such as Triple Modular Redundanc…
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Single Event Effects (SEEs) - predominately bit-flips in electronics caused by particle interactions - are a major concern for ASICs operated in high radiation environments such as ABCStar ASICs, which are designed to be used in the future ATLAS ITk strip tracker. The chip design is therefore optimised to protect it from SEEs by implementing triplication techniques such as Triple Modular Redundancy (TMR). In order to verify the radiation protection mechanisms of the chip design, the cross-section for Single Event Upsets (SEUs), a particular class of SEEs, is measured by exposing the chip to high-intensity particle beams while monitoring it for observed SEUs. This study presents the setup, the performed measurements, and the results from SEU tests performed using the latest version of the ABCStar ASIC (ABCStar V1) using a 480 MeV proton beam.
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Submitted 23 March, 2022;
originally announced March 2022.
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Map** the in-plane electric field inside irradiated diodes
Authors:
L. Poley,
A. J. Blue,
C. Buttar,
V. Cindro,
C. Darroch,
V. Fadeyev,
J. Fernandez-Tejero,
C. Fleta,
C. Helling,
C. Labitan,
I. Mandić,
S. N. Santpur,
D. Sperlich,
M. Ullán,
Y. Unno
Abstract:
A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of…
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A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of the Large Hadron Collider at CERN, which will significantly increase the rate of particle collisions and resulting particle tracks. During their operation in the ATLAS detector, sensors for the ITk strip tracker are expected to accumulate fluences up to 1.6 x 10^15 n_eq/cm^2 (including a safety factor of 1.5), which will significantly affect their performance. One characteristic of interest for highly irradiated sensors is the shape and homogeneity of the electric field inside its active area. For the results presented here, diodes with edge structures similar to full size ATLAS sensors were irradiated up to fluences comparable to those in the ATLAS ITk strip tracker and their electric fields mapped using a micro-focused X-ray beam (beam diameter 2x3 μm^2). This study shows the extension and shape of the electric field inside highly irradiated diodes over a range of applied bias voltages. Additionally, measurements of the outline of the depleted sensor areas allow a comparison of the measured leakage current for different fluences with expectations for the corresponding active areas.
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Submitted 29 March, 2021;
originally announced March 2021.
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The ABC130 barrel module prototy** programme for the ATLAS strip tracker
Authors:
Luise Poley,
Craig Sawyer,
Sagar Addepalli,
Anthony Affolder,
Bruno Allongue,
Phil Allport,
Eric Anderssen,
Francis Anghinolfi,
Jean-François Arguin,
Jan-Hendrik Arling,
Olivier Arnaez,
Nedaa Alexandra Asbah,
Joe Ashby,
Eleni Myrto Asimakopoulou,
Naim Bora Atlay,
Ludwig Bartsch,
Matthew J. Basso,
James Beacham,
Scott L. Beaupré,
Graham Beck,
Carl Beichert,
Laura Bergsten,
Jose Bernabeu,
Prajita Bhattarai,
Ingo Bloch
, et al. (224 additional authors not shown)
Abstract:
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000…
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For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototy** programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototy** program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.
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Submitted 7 September, 2020;
originally announced September 2020.
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Map** the depleted area of silicon diodes using a micro-focused X-ray beam
Authors:
Luise Poley,
Andrew Blue,
Ingo Bloch,
Craig Buttar,
Vitaliy Fadeyev,
Javier Fernandez-Tejero,
Celeste Fleta,
Johannes Hacker,
Carlos Lacasta Llacer,
Mercedes Miñano,
Martin Renzmann,
Edoardo Rossi,
Craig Sawyer,
Dennis Sperlich,
Martin Stegler,
Miguel Ullán,
Yoshinobu Unno
Abstract:
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In…
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For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several kΩ cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source. For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. The findings showed that the electric field in each diode under investigation extended beyond its bias ring and reached the dicing edge.
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Submitted 27 March, 2019; v1 submitted 7 September, 2018;
originally announced September 2018.
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Prototy** of petalets for the Phase-II Upgrade of the silicon strip tracking detector of the ATLAS Experiment
Authors:
S. Kuehn,
V. Benítez,
J. Fernández-Tejero,
C. Fleta,
M. Lozano,
M. Ullán,
H. Lacker,
L. Rehnisch,
D. Sperlich,
D. Ariza,
I. Bloch,
S. Díez,
I. Gregor,
J. Keller,
K. Lohwasser,
L. Poley,
V. Prahl,
N. Zakharchuk,
M. Hauser,
K. Jakobs,
K. Mahboubi,
R. Mori,
U. Parzefall,
J. Bernabéu,
C. Lacasta
, et al. (9 additional authors not shown)
Abstract:
In the high luminosity era of the Large Hadron Collider, the HL-LHC, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The I…
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In the high luminosity era of the Large Hadron Collider, the HL-LHC, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototy** and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototy** plans for large structures.
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Submitted 5 November, 2017;
originally announced November 2017.
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Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam
Authors:
Luise Poley,
Andrew Blue,
Richard Bates,
Ingo Bloch,
Sergio Diez,
Javier Fernandez-Tejero,
Celeste Fleta,
Bruce Gallop,
Ashley Greenall,
Ingrid-Maria Gregor,
Kazuhiko Hara,
Yoichi Ikegami,
Carlos Lacasta,
Kristin Lohwasser,
Dzmitry Maneuski,
Sebastian Nagorski,
Ian Pape,
Peter W. Phillips,
Dennis Sperlich,
Kawal Sawhney,
Urmila Soldevila,
Miguel Ullan,
Yoshinobu Unno,
Matt Warren
Abstract:
The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope wi…
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The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 um FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 Um thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 Um thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 um strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.
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Submitted 1 July, 2016; v1 submitted 15 March, 2016;
originally announced March 2016.
