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Proper usage of Scherrer's and Guinier's formulas in X-ray analysis of size distribution in systems of monocrystalline CeO2 nanoparticles
Authors:
Adriana Valério,
Fabiane J. Trindade,
Rafaela F. S. Penacchio,
Bria C. Ramos,
Sérgio Damasceno,
Maurício B. Estradiote,
Cristiane B. Rodella,
André S. Ferlauto,
Stefan W. Kycia,
Sérgio L. Morelhão
Abstract:
Small-angle X-ray scattering (SAXS) and X-ray diffraction (XRD) techniques are widely used as analytical tools in the optimization and control of nanomaterial synthesis processes. In crystalline nanoparticle systems with size distribution, the discrepant size values determined by using SAXS and XRD still lacks a well-established description in quantitative terms. To address fundamental questions,…
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Small-angle X-ray scattering (SAXS) and X-ray diffraction (XRD) techniques are widely used as analytical tools in the optimization and control of nanomaterial synthesis processes. In crystalline nanoparticle systems with size distribution, the discrepant size values determined by using SAXS and XRD still lacks a well-established description in quantitative terms. To address fundamental questions, the isolated effect of size distribution is investigated by SAXS and XRD simulation in polydisperse systems of virtual nanoparticles. It quantitatively answered a few questions, among which the most accessible and reliable size values and what they stand for regarding the size distribution parameters. When a finite size distribution is introduced, the two techniques produce differing results even in perfectly crystalline nanoparticles. Once understood, the deviation in resulting size values can, in principle, resolve two parameters size distributions of crystalline nanoparticles. To demonstrate data analysis procedures in light of this understanding, XRD and SAXS experiments were carried out on a series of powder samples of cubic ceria nanoparticles. Besides changes in the size distribution related to the synthesis parameters, proper comparison of XRD and SAXS results revealed particle-particle interaction effects underneath the SAXS intensity curves. It paves the way for accurate and reliable methodologies to assess size, size dispersion, and degree of crystallinity in synthesized nanoparticles.
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Submitted 27 April, 2023; v1 submitted 1 March, 2022;
originally announced March 2022.
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Oxygen vacancy engineering of TaOx-based resistive memories by Zr do** for improved variability and synaptic behavior
Authors:
Joao H. Quintino Palhares,
Yann Beilliard,
Fabien Alibart,
Everton Bonturim,
Daniel Z. de Florio,
Fabio C. Fonseca,
Dominique Drouin,
Andre S. Ferlauto
Abstract:
Resistive switching devices are promising emerging non-volatile memories. However, one of the biggest challenges for resistive switching (RS) memory applications is the device-to-device (D2D) variability which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (VO) conductive filaments. In order to reduce D2D variability, the control of oxygen vacancy formation an…
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Resistive switching devices are promising emerging non-volatile memories. However, one of the biggest challenges for resistive switching (RS) memory applications is the device-to-device (D2D) variability which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (VO) conductive filaments. In order to reduce D2D variability, the control of oxygen vacancy formation and configuration is paramount. We report in this study Zr do** of TaOx-based RS devices prepared by pulsed laser deposition (PLD) as an efficient mean to reduce VO formation energy and increase conductive filament (CF) confinement, thus reducing D2D variability. Such findings were supported by X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE) and electronic transport analysis. Zr doped films presented increased VO concentration, and more localized VO thanks to the interaction with Zr. According to DC and pulse mode electrical characterization, D2D variability was decreased by a factor of 7, resistance window was doubled and a more gradual and monotonic long-term potentiation/depression (LTP/LTD) in pulse switching was achieved in forming-free Zr:TaOx devices thus displaying promising performance for artificial synapse applications.
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Submitted 22 April, 2021; v1 submitted 16 December, 2020;
originally announced December 2020.
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Alumina coating for dispersion management in ultra-high Q microresonators
Authors:
Marvyn Inga,
Laís Fujii,
José Maria C. da Silva Filho,
João Henrique Q. Palhares,
Andre S. Ferlauto,
Francisco C. Marques,
Thiago P. Mayer Alegre,
Gustavo S. Wiederhecker
Abstract:
Silica optical microspheres often exhibit ultra-high quality factors, yet, their group velocity dispersion, which is crucial for nonlinear optics applications, can only be coarsely tuned. We experimentally demonstrate that group-velocity dispersion of a silica microsphere can be engineered by coating it with conformal nanometric layers of alumina, yet preserving its ultra-high optical quality fact…
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Silica optical microspheres often exhibit ultra-high quality factors, yet, their group velocity dispersion, which is crucial for nonlinear optics applications, can only be coarsely tuned. We experimentally demonstrate that group-velocity dispersion of a silica microsphere can be engineered by coating it with conformal nanometric layers of alumina, yet preserving its ultra-high optical quality factors (\num{\sim e7}) at telecom wavelengths. Using the atomic layer deposition technique for the dielectric coating, which ensures nm-level thickness control, we not only achieve a fine dispersion tailoring but also maintain a low surface roughness and material absorption to ensure a low optical loss. Numerical simulations supporting our experimental results show that the alumina layer thickness is a promising technique for precise tuning of group-velocity dispersion. As an application we demonstrate the generation of Kerr optical frequency combs, showing that the alumina coatings can also sustain the high optical intensities necessary for nonlinear optical phenomena.
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Submitted 16 September, 2020;
originally announced September 2020.
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Probing the Electronic Properties of Monolayer MoS$_2$ via Interaction with Molecular Hydrogen
Authors:
Natália P. Rezende,
Alisson R. Cadore,
Andreij C. Gadelha,
Cíntia L. Pereira,
Vinicius Ornelas,
Kenji Watanabe,
Takashi Taniguchi,
André S. Ferlauto,
Ângelo Malachias,
Leonardo C. Campos,
Rodrigo G. Lacerda
Abstract:
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response to H$_2$ that covers a broad range of concentration (0.1 - 90%) at a relatively low operating temperature range (300-473 K). Most important, H$_2$ sensors base…
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This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response to H$_2$ that covers a broad range of concentration (0.1 - 90%) at a relatively low operating temperature range (300-473 K). Most important, H$_2$ sensors based on MoS$_2$ FETs show desirable properties such as full reversibility and absence of catalytic metal dopants (Pt or Pd). The experimental results indicate that the conductivity of MoS$_2$ monotonically increases as a function of the H$_2$ concentration due to a reversible charge transferring process. It is proposed that such process involves dissociative H$_2$ adsorption driven by interaction with sulfur vacancies in the MoS$_2$ surface (VS). This description is in agreement with related density functional theory studies about H$_2$ adsorption on MoS$_2$. Finally, measurements on partially defect-passivated MoS$_2$ FETs using atomic layer deposited aluminum oxide consist of an experimental indication that the VS plays an important role in the H$_2$ interaction with the MoS$_2$. These findings provide insights for futures applications in catalytic process between monolayer MoS$_2$ and H$_2$ and also introduce MoS$_2$ FETs as promising H$_2$ sensors.
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Submitted 4 March, 2020;
originally announced March 2020.
