Showing 1–50 of 53 results for author: Ferguson, A J

Monitoring AGNs with H$β$ Asymmetry. IV. First Reverberation Map** Results of 14 AGNs

Authors: T. E. Zastrocky, Michael S. Brotherton, Pu Du, Jacob N. McLane, Kianna A. Olson, D. A. Dale, H. A. Kobulnicky, Jaya Maithil, My L. Nguyen, William T. Chick, David H. Kasper, Derek Hand, C. Adelman, Z. Carter, G. Murphree, M. Oeur, T. Roth, S. Schonsberg, M. J. Caradonna, J. Favro, A. J. Ferguson, I. M. Gonzalez, L. M. Hadding, H. D. Hagler, C. J. Rogers , et al. (19 additional authors not shown)

Abstract: We report first-time reverberation map** results for 14 AGNs from the ongoing Monitoring AGNs with H$β$ Asymmetry campaign (MAHA). These results utilize optical spectra obtained with the Long Slit Spectrograph on the Wyoming Infrared 2.3m Telescope between 2017 November-2023 May. MAHA combines long-duration monitoring with high cadence. We report results from multiple observing seasons for 9 of… ▽ More We report first-time reverberation map** results for 14 AGNs from the ongoing Monitoring AGNs with H$β$ Asymmetry campaign (MAHA). These results utilize optical spectra obtained with the Long Slit Spectrograph on the Wyoming Infrared 2.3m Telescope between 2017 November-2023 May. MAHA combines long-duration monitoring with high cadence. We report results from multiple observing seasons for 9 of the 14 objects. These results include H$β$ time lags, supermassive black hole masses, and velocity-resolved time lags. The velocity-resolved lags allow us to investigate the kinematics of the broad-line region. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Comments: 35 pages, 19 figures, accepted for publication in ApJ Supplement

Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices

Authors: Gaurav Vats, Brett Hodges, Andrew J. Ferguson, Lance Wheeler, Jeffrey L. Blackburn

Abstract: Metal halide perovskite-based materials have emerged over the past few decades as remarkable solution-processable opto-electronic materials with many intriguing properties and potential applications. These emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photocond… ▽ More Metal halide perovskite-based materials have emerged over the past few decades as remarkable solution-processable opto-electronic materials with many intriguing properties and potential applications. These emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, we review recent progress toward memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality. △ Less

Submitted 3 March, 2023; originally announced March 2023.

Journal ref: Advanced Materials, 2022, 2205459

Broad-line region in NGC 4151 monitored by two decades of reverberation map** campaigns. I. Evolution of structure and kinematics

Authors: Yong-Jie Chen, Dong-Wei Bao, Shuo Zhai, Feng-Na Fang, Chen Hu, Pu Du, Sen Yang, Zhu-Heng Yao, Yan-Rong Li, Michael S. Brotherton, Jacob N. McLane, T. E. Zastrocky, Kianna A. Olson, Edi Bon, Hua-Rui Bai, Yi-Xin Fu, Jun-Rong Liu, Yi-Lin Wang, Jaya Maithil, H. A. Kobulnicky, D. A. Dale, C. Adelman, M. J. Caradonna, Z. Carter, J. Favro , et al. (11 additional authors not shown)

Abstract: We report the results of long-term reverberation map** (RM) campaigns of the nearby active galactic nuclei (AGN) NGC 4151, spanning from 1994 to 2022, based on archived observations of the FAST Spectrograph Publicly Archived Programs and our new observations with the 2.3m telescope at the Wyoming Infrared Observatory. We reduce and calibrate all the spectra in a consistent way, and derive light… ▽ More We report the results of long-term reverberation map** (RM) campaigns of the nearby active galactic nuclei (AGN) NGC 4151, spanning from 1994 to 2022, based on archived observations of the FAST Spectrograph Publicly Archived Programs and our new observations with the 2.3m telescope at the Wyoming Infrared Observatory. We reduce and calibrate all the spectra in a consistent way, and derive light curves of the broad H$β$ line and 5100\,Å continuum. Continuum light curves are also constructed using public archival photometric data to increase sampling cadences. We subtract the host galaxy contamination using {\it HST} imaging to correct fluxes of the calibrated light curves. Utilizing the long-term archival photometric data, we complete the absolute flux-calibration of the AGN continuum. We find that the H$β$ time delays are correlated with the 5100\,Å luminosities as $τ_{\rm Hβ}\propto L_{5100}^{0.46\pm0.16}$. This is remarkably consistent with Bentz et al. (2013)'s global size-luminosity relationship of AGNs. Moreover, the data sets for five of the seasons allow us to obtain the velocity-resolved delays of the H$β$ line, showing diverse structures (outflows, inflows and disks). Combining our results with previous independent measurements, we find the measured dynamics of the H$β$ broad-line region (BLR) are possibly related to the long-term trend of the luminosity. There is also a possible additional $\sim$1.86 years time lag between the variation in BLR radius and luminosity. These results suggest that dynamical changes in the BLR may be driven by the effects of radiation pressure. △ Less

Submitted 15 January, 2023; originally announced January 2023.

Comments: Accepted for publication in MNRAS; comments welcome!

Coupled Charge and Radiation Transport Processes in Thermophotovoltaic and Thermoradiative Cells

Authors: William A. Callahan, Dudong Feng, Zhuomin M. Zhang, Eric S. Toberer, Andrew J. Ferguson, Eric J. Tervo

Abstract: Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge carrier dynamics in semiconductors are well-described by the Poisson-drift-diffusion equations, and thermal radiation in emitter/absorber structures can be computed using multilayer fluctuational electrodynamics. These two types… ▽ More Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge carrier dynamics in semiconductors are well-described by the Poisson-drift-diffusion equations, and thermal radiation in emitter/absorber structures can be computed using multilayer fluctuational electrodynamics. These two types of energy flows interact through radiation absorption/luminescence and charge carrier generation/recombination. However, past research has typically only assumed limited interaction, with thermal radiation absorption as an input for charge carrier models to predict device performance. To examine this assumption, we develop a fully-coupled iterative model of charge and radiation transport in semiconductor devices, and we use our model to analyze near-field and far-field GaSb thermophotovoltaic and thermoradiative systems. By comparing our results to past methods that do not consider cross-influences between charge and radiation transport, we find that a fully-coupled approach is necessary to accurately model photon recycling and near-field enhancement of external luminescence. Because these effects can substantially alter device performance, our modeling approach can aid in the design of efficient thermophotovoltaic and thermoradiative systems. △ Less

Submitted 12 July, 2021; v1 submitted 12 January, 2021; originally announced January 2021.

Comments: 21 pages, 8 figures

Journal ref: Phys. Rev. Applied 15, 054035 (2021)

Solar Thermoradiative-Photovoltaic Energy Conversion

Authors: Eric J. Tervo, William A. Callahan, Eric S. Toberer, Myles A. Steiner, Andrew J. Ferguson

Abstract: We propose a solar thermal energy conversion system consisting of a solar absorber, a thermoradiative cell or negative illumination photodiode, and a photovoltaic cell. Because it is a heat engine, this system can also be paired with thermal storage to provide reliable electricity generation. Heat from the solar absorber drives radiative recombination current in the thermoradiative cell, and its e… ▽ More We propose a solar thermal energy conversion system consisting of a solar absorber, a thermoradiative cell or negative illumination photodiode, and a photovoltaic cell. Because it is a heat engine, this system can also be paired with thermal storage to provide reliable electricity generation. Heat from the solar absorber drives radiative recombination current in the thermoradiative cell, and its emitted light is absorbed by the photovoltaic cell to provide an additional photocurrent. Based on the principle of detailed balance, we calculate a limiting solar conversion efficiency of 85% for fully concentrated sunlight and 45% for one sun with an absorber and single-junction cells of equal areas. Ideal and nonideal solar thermoradiative-photovoltaic systems outperform solar thermophotovoltaic converters for low bandgaps and practical absorber temperatures. Their performance enhancement results from a high tolerance to nonradiative generation/recombination and an ability to minimize radiative heat losses. We show that a realistic device with all major losses could achieve increases in solar conversion efficiency by up to 7.9% (absolute) compared to a solar thermophotovoltaic device under low optical concentration. Our results indicate that these converters could serve as efficient heat engines for low cost single axis tracking systems. △ Less

Submitted 1 September, 2020; v1 submitted 22 July, 2020; originally announced July 2020.

Comments: 20 pages, 7 figures

Random telegraph signal analysis with a recurrent neural network

Authors: N. J. Lambert, A. A. Esmail, M. Edwards, A. J. Ferguson, H. G. L. Schwefel

Abstract: We use an artificial neural network to analyze asymmetric noisy random telegraph signals (RTSs), and extract underlying transition rates. We demonstrate that a long short-term memory neural network can vastly outperform conventional methods, particularly for noisy signals. Our technique gives reliable results as the signal-to-noise ratio approaches one, and over a wide range of underlying transiti… ▽ More We use an artificial neural network to analyze asymmetric noisy random telegraph signals (RTSs), and extract underlying transition rates. We demonstrate that a long short-term memory neural network can vastly outperform conventional methods, particularly for noisy signals. Our technique gives reliable results as the signal-to-noise ratio approaches one, and over a wide range of underlying transition rates. We apply our method to random telegraph signals generated by a superconducting double dot based photon detector, allowing us to extend our measurement of quasiparticle dynamics to new temperature regimes. △ Less

Submitted 13 February, 2020; originally announced February 2020.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. E 102, 012312 (2020)

Negative spin-Hall angle and anisotropic spin-orbit torques in epitaxial IrMn

Authors: V. Tshitoyan, P. Wadley, M. Wang, A. W. Rushforth, A. J. Ferguson

Abstract: A spin-torque ferromagnetic resonance study is performed in epitaxial $\mathrm{Fe / Ir_{15}Mn_{85}}$ bilayers with different Fe thicknesses. We measure a negative spin-Hall angle of a few percent in the antiferromagnetic IrMn in contrast to previously reported positive values. A large spin-orbit field with Rashba symmetry opposing the Oersted field is also present. Magnitudes of measured spin-orbi… ▽ More A spin-torque ferromagnetic resonance study is performed in epitaxial $\mathrm{Fe / Ir_{15}Mn_{85}}$ bilayers with different Fe thicknesses. We measure a negative spin-Hall angle of a few percent in the antiferromagnetic IrMn in contrast to previously reported positive values. A large spin-orbit field with Rashba symmetry opposing the Oersted field is also present. Magnitudes of measured spin-orbit torques depend on the crystallographic direction of current and are correlated with the exchange bias direction set during growth. We suggest that the uncompensated moments at the Fe / IrMn interface are responsible for the observed anisotropy. Our findings highlight the importance of crystalline and magnetic structures for the spin-Hall effect in antiferromagnets. △ Less

Submitted 3 January, 2018; originally announced January 2018.

Comments: 6 pages, 5 figures

Cooper pair tunnelling and quasiparticle poisoning in a galvanically isolated superconducting double dot

Authors: A. A. Esmail, A. J. Ferguson, N. J. Lambert

Abstract: We increase the isolation of a superconducting double dot from its environment by galvanically isolating it from any electrodes. We probe it using high frequency reflectometry techniques, find 2e-periodic behaviour, and characterise the energy structure of its charge states. By modelling the response of the device, we determine the quasiparticle poisoning rate to be significantly worse than that o… ▽ More We increase the isolation of a superconducting double dot from its environment by galvanically isolating it from any electrodes. We probe it using high frequency reflectometry techniques, find 2e-periodic behaviour, and characterise the energy structure of its charge states. By modelling the response of the device, we determine the quasiparticle poisoning rate to be significantly worse than that of a unisolated double dot, and conclude that quasiparticle exchange between the dot and the leads is an important relaxation mechanism. △ Less

Submitted 12 October, 2017; v1 submitted 22 September, 2017; originally announced September 2017.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 111, 252602 (2017)

Thickness dependence study of current-driven ferromagnetic resonance in Y3Fe5O12/heavy metal bilayers

Authors: Z. Fang, A. Mitra, A. L. Westerman, M. Ali, C. Ciccarelli, O. Cespedes, B. J. Hickey, A. J. Ferguson

Abstract: We use ferromagnetic resonance to study the current-induced torques in YIG/heavy metal bilayers. YIG samples with thickness varying from 14.8 nm to 80 nm, with Pt or Ta thin film on top, are measured by applying a microwave current into the heavy metals and measuring the longitudinal DC voltage generated by both spin rectification and spin pum**. From a symmetry analysis of the FMR lineshape and… ▽ More We use ferromagnetic resonance to study the current-induced torques in YIG/heavy metal bilayers. YIG samples with thickness varying from 14.8 nm to 80 nm, with Pt or Ta thin film on top, are measured by applying a microwave current into the heavy metals and measuring the longitudinal DC voltage generated by both spin rectification and spin pum**. From a symmetry analysis of the FMR lineshape and its dependence on YIG thickness, we deduce that the Oersted field dominates over spin-transfer torque in driving magnetization dynamics. △ Less

Submitted 19 December, 2016; originally announced December 2016.

Comments: 8 pages, 3 figures

Triple-resonant Brillouin light scattering in magneto-optical cavities

Authors: J. A. Haigh, A. Nunnenkamp, A. J. Ramsay, A. J. Ferguson

Abstract: An enhancement in Brillouin light scattering of optical photons with magnons is demonstrated in magneto-optical whispering gallery mode resonators tuned to a triple resonance point. This occurs when both the input and output optical modes are resonant with those of the whispering gallery resonator, with a separation given by the ferromagnetic resonance (FMR) frequency. The identification and excit… ▽ More An enhancement in Brillouin light scattering of optical photons with magnons is demonstrated in magneto-optical whispering gallery mode resonators tuned to a triple resonance point. This occurs when both the input and output optical modes are resonant with those of the whispering gallery resonator, with a separation given by the ferromagnetic resonance (FMR) frequency. The identification and excitation of specific optical modes allows us to gain a clear understanding of the mode-matching conditions. A selection rule due to wavevector matching leads to an intrinsic single-sideband excitation. Strong suppression of one sideband is essential for one-to-one frequency map** in coherent optical-to-microwave conversion. △ Less

Submitted 22 September, 2016; v1 submitted 11 July, 2016; originally announced July 2016.

Comments: 6 pages + 3 pages supp. information

Journal ref: Phys. Rev. Lett. 117, 133602 (2016)

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Authors: A. C. Betz, M. L. V. Tagliaferri, M. Vinet, M. Broström, M. Sanquer, A. J. Ferguson, M. F. Gonzalez-Zalba

Abstract: We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitanc… ▽ More We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture. △ Less

Submitted 11 March, 2016; originally announced March 2016.

Exchange magnon induced resistance asymmetry in permalloy spin-Hall oscillators

Authors: S. Langenfeld, V. Tshitoyan, Z. Fang, A. Wells, T. A. Moore, A. J. Ferguson

Abstract: We investigate magnetization dynamics in a spin-Hall oscillator using a direct current measurement as well as conventional microwave spectrum analysis. When the current applies an anti-dam** spin-transfer torque, we observe a change in resistance which we ascribe to the excitation of incoherent exchange magnons. A simple model is developed based on the reduction of the effective saturation magne… ▽ More We investigate magnetization dynamics in a spin-Hall oscillator using a direct current measurement as well as conventional microwave spectrum analysis. When the current applies an anti-dam** spin-transfer torque, we observe a change in resistance which we ascribe to the excitation of incoherent exchange magnons. A simple model is developed based on the reduction of the effective saturation magnetization, quantitatively explaining the data. The observed phenomena highlight the importance of exchange magnons on the operation of spin-Hall oscillators. △ Less

Submitted 22 February, 2016; originally announced February 2016.

Comments: 4 pages, 4 figures

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Authors: M. Fernando Gonzalez-Zalba, Sergey N. Shevchenko, Sylvain Barraud, J. Robert Johansson, Andrew J. Ferguson, Franco Nori, Andreas C. Betz

Abstract: Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge o… ▽ More Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitance changes at the inter-dot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-St{ü}ckelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunnelling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, $T_2\approx 100$~ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology. △ Less

Submitted 18 February, 2016; originally announced February 2016.

Journal ref: Nano Letters 16 (3), 1614 (2016)

Magneto-optical coupling in whispering gallery mode resonators

Authors: J. A. Haigh, S. Langenfeld, N. J. Lambert, J. J. Baumberg, A. J. Ramsay, A. Nunnenkamp, A. J. Ferguson

Abstract: We demonstrate that yttrium iron garnet microspheres support optical whispering gallery modes similar to those in non-magnetic dielectric materials. The direction of the ferromagnetic moment tunes both the resonant frequency via the Voigt effect as well as the degree of polarization rotation via the Faraday effect. An understanding of the magneto-optical coupling in whispering gallery modes, where… ▽ More We demonstrate that yttrium iron garnet microspheres support optical whispering gallery modes similar to those in non-magnetic dielectric materials. The direction of the ferromagnetic moment tunes both the resonant frequency via the Voigt effect as well as the degree of polarization rotation via the Faraday effect. An understanding of the magneto-optical coupling in whispering gallery modes, where the propagation direction rotates with respect to the magnetization, is fundamental to the emerging field of cavity optomagnonics. △ Less

Submitted 3 December, 2015; v1 submitted 22 October, 2015; originally announced October 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. A 92, 063845 (2015)

Room-temperature spin-orbit torque in NiMnSb

Authors: C. Ciccarelli, L. Anderson, V. Tshitoyan, A. J. Ferguson, F. Gerhard, C. Gould, L. W. Molenkamp, J. Gayles, J. Zelezny, L. Smejkal, Z. Yuan, J. Sinova, F. Freimuth, T. Jungwirth

Abstract: Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sit… ▽ More Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sites are occupied by the same atomic species, electrical current can generate local spin polarization with the same magnitude and opposite sign on the two inversion-partner sites. In CuMnAs, which shares this specific crystal symmetry of the Si lattice, the effect led to the demonstration of electrical switching in an antiferromagnetic memory at room temperature. When the inversion-partner sites are occupied by different atoms, a non-zero global spin-polarization is generated by the applied current which can switch a ferromagnet, as reported at low temperatures in the diluted magnetic semiconductor (Ga,Mn)As. Here we demonstrate the effect of the global current-induced spin polarization in a counterpart crystal-symmetry material NiMnSb which is a member of the broad family of magnetic Heusler compounds. It is an ordered high-temperature ferromagnetic metal whose other favorable characteristics include high spin-polarization and low dam** of magnetization dynamics. Our experiments are performed on strained single-crystal epilayers of NiMnSb grown on InGaAs. By performing all-electrical ferromagnetic resonance measurements in microbars patterned along different crystal axes we detect room-temperature spin-orbit torques generated by effective fields of the Dresselhaus symmetry. The measured magnitude and symmetry of the current-induced torques are consistent with our relativistic density-functional theory calculations. △ Less

Submitted 12 October, 2015; originally announced October 2015.

Cavity mediated coherent coupling of magnetic moments

Authors: N. J. Lambert, J. A. Haigh, S. Langenfeld, A. C. Doherty, A. J. Ferguson

Abstract: We demonstrate the long range strong coupling of magnetostatic modes in spatially separated ferromagnets mediated by a microwave frequency cavity. Two spheres of yttrium iron garnet are embedded in the cavity and their magnetostatic modes probed using a dispersive measurement technique. We find they are strongly coupled to each other even when detuned from the cavity modes. We investigate the depe… ▽ More We demonstrate the long range strong coupling of magnetostatic modes in spatially separated ferromagnets mediated by a microwave frequency cavity. Two spheres of yttrium iron garnet are embedded in the cavity and their magnetostatic modes probed using a dispersive measurement technique. We find they are strongly coupled to each other even when detuned from the cavity modes. We investigate the dependence of the magnet-magnet coupling on the cavity detuning $Δ$, and find a $1/Δ$ dependence also characteristic of cavity-coupled superconducting qubits. Dark states of the coupled magnetostatic modes of the system are observed, and ascribed to mismatches between the symmetries of the modes and the drive field. △ Less

Submitted 6 July, 2015; v1 submitted 19 June, 2015; originally announced June 2015.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. A 93, 021803 (2016)

Dispersive read-out of ferromagnetic resonance for strongly coupled magnons and microwave photons

Authors: J. A. Haigh, N. J. Lambert, A. C. Doherty, A. J. Ferguson

Abstract: We demonstrate the dispersive measurement of ferromagnetic resonance in a yttrium iron garnet sphere embedded within a microwave cavity. The reduction in the longitudinal magnetization at resonance is measured as a frequency shift in the cavity mode coupled to the sphere. This measurement is a result of the intrinsic non-linearity in magnetization dynamics, indicating a promising route towards exp… ▽ More We demonstrate the dispersive measurement of ferromagnetic resonance in a yttrium iron garnet sphere embedded within a microwave cavity. The reduction in the longitudinal magnetization at resonance is measured as a frequency shift in the cavity mode coupled to the sphere. This measurement is a result of the intrinsic non-linearity in magnetization dynamics, indicating a promising route towards experiments in magnon cavity quantum electro-dynamics. △ Less

Submitted 18 June, 2015; originally announced June 2015.

Comments: 5 pages, 5 figures

Journal ref: Physical Review B 91, 104410 (2015)

Identification of spin wave modes strongly coupled to a co-axial cavity

Authors: N. J. Lambert, J. A. Haigh, A. J. Ferguson

Abstract: We demonstrate, at room temperature, the strong coupling of the fundamental and non-uniform magnetostatic modes of an yttrium iron garnet (YIG) ferrimagnetic sphere to the electromagnetic modes of a co-axial cavity. The well-defined field profile within the cavity yields a specific coupling strength for each magnetostatic mode. We experimentally measure the coupling strength for the different magn… ▽ More We demonstrate, at room temperature, the strong coupling of the fundamental and non-uniform magnetostatic modes of an yttrium iron garnet (YIG) ferrimagnetic sphere to the electromagnetic modes of a co-axial cavity. The well-defined field profile within the cavity yields a specific coupling strength for each magnetostatic mode. We experimentally measure the coupling strength for the different magnetostatic modes and, by calculating the expected coupling strengths, are able to identify the modes themselves. △ Less

Submitted 9 June, 2015; originally announced June 2015.

Comments: 9 Pages, 3 figures, 1 table

Journal ref: J. Appl. Phys., 117, 053910 (2015)

Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

Authors: A. C. Betz, R. Wacquez, M. Vinet, X. Jehl, A L. Saraiva, M. Sanquer, A. J. Ferguson, M. F. Gonzalez-Zalba

Abstract: We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via… ▽ More We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via in-situ gate-based radio frequency reflectometry, where one top-gate electrode is connected to a resonator. The latter removes the need for external charge sensors in quantum computing architectures and provides a compact way to readout the dispersive shift caused by changes in the quantum capacitance during interdot charge transitions. Here, we observe Pauli spin-blockade in the high-frequency response of the circuit at finite magnetic fields between singlet and triplet states. The blockade is lifted at higher magnetic fields when intra-dot triplet states become the ground state configuration. A lineshape analysis of the dispersive phase shift reveals furthermore an intradot valley-orbit splitting $Δ_{vo}$ of 145 $μ$eV. Our results open up the possibility to operate compact CMOS technology as a singlet-triplet qubit and make split-gate silicon nanowire architectures an ideal candidate for the study of spin dynamics. △ Less

Submitted 1 May, 2015; v1 submitted 12 April, 2015; originally announced April 2015.

Reconfigurable Boolean Logic using Magnetic Single-Electron Transistors

Authors: M. F. Gonzalez-Zalba, C. Ciccarelli, L. P. Zarbo, A. C. Irvine, R. P. Campion, B. L. Gallagher, T. Jungwirth, A. J. Ferguson, J. Wunderlich

Abstract: We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coul… ▽ More We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network. △ Less

Submitted 6 April, 2015; originally announced April 2015.

Electrical manipulation of a ferromagnet by an antiferromagnet

Authors: V. Tshitoyan, C. Ciccarelli, A. P. Mihai, M. Ali, A. C. Irvine, T. A. Moore, T. Jungwirth, A. J. Ferguson

Abstract: We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study we use an electrical detection technique of the ferromagnetic resonance driven by an in-plane ac-current in a NiFe/IrMn bilayer. At room temperature, we observe antidam**-like spin torque acting on the NiFe ferromagnet, generated by the in-plane current driven thro… ▽ More We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study we use an electrical detection technique of the ferromagnetic resonance driven by an in-plane ac-current in a NiFe/IrMn bilayer. At room temperature, we observe antidam**-like spin torque acting on the NiFe ferromagnet, generated by the in-plane current driven through the IrMn antiferromagnet. A large enhancement of the torque, characterized by an effective spin-Hall angle exceeding most heavy transition metals, correlates with the presence of the exchange-bias field at the NiFe/IrMn interface. It highlights that, in addition to strong spin-orbit coupling, the antiferromagnetic order in IrMn governs the observed phenomenon. △ Less

Submitted 22 September, 2015; v1 submitted 16 February, 2015; originally announced February 2015.

Comments: Main text: 7 pages, 6 figures. Includes supplementary information of 10 pages, 8 figures. Changes from the previous version include a new control experiment, two new figures in the main text, expanded discussion on the origins of the observed effect. Additionally, 2 new supplementary sections have been added

Journal ref: Phys. Rev. B 92, 214406 (2015)

Disentangling relativistic spin torques in a ferromagnet/semiconductor bilayer

Authors: T. D. Skinner, K. Olejník, L. K. Cunningham, H. Kurebayashi, R. P. Campion, B. L. Gallagher, T. Jungwirth, A. J. Ferguson

Abstract: Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically-controlled magnetic memory devices. Phenomenologically, the torques have field-like and antidam**-like components with distinct symmetries. Microscopically, they are considered to have two possible origins. In… ▽ More Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically-controlled magnetic memory devices. Phenomenologically, the torques have field-like and antidam**-like components with distinct symmetries. Microscopically, they are considered to have two possible origins. In one picture, a spin-current generated in the paramagnet via the relativistic spin Hall effect (SHE) is absorbed in the ferromagnet and induces the spin transfer torque (STT). In the other picture, a non-equilibrium spin-density is generated via the relativistic inverse spin galvanic effect (ISGE) and induces the spin-orbit torque (SOT) in the ferromagnet. From the early observations in paramagnetic semiconductors, SHE and ISGE are known as companion phenomena that can both allow for electrically aligning spins in the same structure. It is essential for our basic physical understanding of the spin torques at the ferromagnet/paramagnet interface to experimentally disentangle the SHE and ISGE contributions. To achieve this we prepared an epitaxial transition-metal-ferromagnet/semiconductor-paramagnet single-crystal structure and performed a room-temperature vector analysis of the relativistic spin torques by means of the all-electrical ferromagnetic resonance (FMR) technique. By design, the field-like torque is governed by the ISGE-based mechanism in our structure while the antidam**-like torque is due to the SHE-based mechanism △ Less

Submitted 10 February, 2015; originally announced February 2015.

Ambipolar quantum dots in intrinsic silicon

Authors: A. C. Betz, M. F. Gonzalez-Zalba, G. Podd, A. J. Ferguson

Abstract: We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater l… ▽ More We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction leading to higher charge noise in the p-regime. △ Less

Submitted 13 October, 2014; originally announced October 2014.

Comments: in press at Appl. Phys. Lett

A high-sensitivity gate-based charge sensor in silicon

Authors: M. F. Gonzalez-Zalba, A. J. Ferguson, S. Barraud, A. C. Betz

Abstract: The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit arch… ▽ More The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit architectures that enable small scale computation, it becomes important to consider the charge read-out overhead. With this in mind, Reilly et al. demonstrated a gate readout scheme in a GaAs double quantum dot that removed the need for an external charge sensor. This readout, which achieved sensitivities of order me/$\sqrt(Hz)$, was enabled by using a resonant circuit to probe the complex radio-frequency polarisability of the double quantum dot. However, the ultimate performance of this technology and the noise sources that limit it remain to be determined. Here, we investigate a gate-based readout scheme using a radio-frequency resonant circuit strongly coupled to a double quantum at the corner states of a silicon nanowire transistor. We find a significantly improved charge sensitivity of 37 $μ$e/$\sqrt(Hz)$. By solving the dynamical master equation of the fast-driven electronic transitions we quantify the noise spectral density and determine the ultimate charge and phase sensitivity of gate-based read-out. We find comparable performance to conventional charge sensors and fundamental limits of order ne/$\sqrt(Hz)$ and $μ$rad/$\sqrt(Hz)$, with the gate-based sensor improving on standard detection for certain device parameters. Our results show that, especially in state-of-the-art silicon qubit architectures, charge detection by probing the complex polarisability has advantages in terms of reducing the readout overhead but also in terms of the absolute charge sensitivity. △ Less

Submitted 12 May, 2014; originally announced May 2014.

Comments: 9 pages, 5 figures

Journal ref: Nature Communications, 6, 6084, 2015

The energy landscape of a superconducting double dot

Authors: N. J. Lambert, M. Edwards, A. A. Esmail, F. A. Pollock, B. W. Lovett, A. J. Ferguson

Abstract: We consider the energetics of a superconducting double dot, comprising two superconducting islands coupled in series via a Josephson junction. The periodicity of the stability diagram is governed by the competition between the charging energy and the superconducting gap, and the stability of each charge state depends upon its parity. We also find that, at finite temperatures, thermodynamic conside… ▽ More We consider the energetics of a superconducting double dot, comprising two superconducting islands coupled in series via a Josephson junction. The periodicity of the stability diagram is governed by the competition between the charging energy and the superconducting gap, and the stability of each charge state depends upon its parity. We also find that, at finite temperatures, thermodynamic considerations have a significant effect on the stability diagram. △ Less

Submitted 26 March, 2014; originally announced March 2014.

Comments: 4 pages, 5 figures

An Exchange-Coupled Donor Molecule in Silicon

Authors: M. Fernando Gonzalez-Zalba, André Saraiva, Dominik Heiss, Maria J. Calderón, Belita Koiller, Andrew J. Ferguson

Abstract: Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics [6, 7]. The level of maturity this field has reached has enabled the fabrication and demonstration of transistors that base their functionality on a single imp… ▽ More Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics [6, 7]. The level of maturity this field has reached has enabled the fabrication and demonstration of transistors that base their functionality on a single impurity atom [8, 9] allowing the predicted single-donor energy spectrum to be checked by an electrical transport measurement. Generalizing the concept, a donor pair may behave as a hydrogen molecule analogue. However, the molecular quantum mechanical solution only takes us so far and a detailed understanding of the electronic structure of these molecular systems is a challenge to be overcome. Here we present a combined experimental-theoretical demonstration of the energy spectrum of a strongly interacting donor pair in the channel of a silicon nanotransistor and show the first observation of measurable two-donor exchange coupling. Moreover, the analysis of the three charge states of the pair shows evidence of a simultaneous enhancement of the binding and charging energies with respect to the single donor spectrum. The measured data are accurately matched by results obtained in an effective mass theory incorporating the Bloch states multiplicity in Si, a central cell corrected donor potential and a full configuration interaction treatment of the 2-electron spectrum. Our data describe the basic 2-qubit entanglement element in Kane's quantum processing scheme [1], namely exchange coupling, implemented here in the range of molecular hybridization. △ Less

Submitted 16 December, 2013; originally announced December 2013.

Comments: 9 pages, 5 figures

Journal ref: Nano Letters, 2014, 14, 5672

Spin-orbit torque opposing the Oersted torque in ultrathin Co/Pt bilayers

Authors: T. D. Skinner, M. Wang, A. T. Hindmarch, A. W. Rushforth, A. C. Irvine, D. Heiss, H. Kurebayashi, A. J. Ferguson

Abstract: Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven FMR technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, were analysed to determine the symmetries and relative magnitudes of the spin-orbit torques. Both anti-dam** (Slonczewski) and field-like torques were observed. As the ferromagnet thickness was r… ▽ More Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven FMR technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, were analysed to determine the symmetries and relative magnitudes of the spin-orbit torques. Both anti-dam** (Slonczewski) and field-like torques were observed. As the ferromagnet thickness was reduced from 3 to 1 nm, the sign of the field-like torque reversed. This observation is consistent with the emergence of a Rashba spin orbit torque in ultra-thin bilayers. △ Less

Submitted 9 December, 2013; originally announced December 2013.

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

Authors: T. Jungwirth, J. Wunderlich, V. Novak, K. Olejnik, B. L. Gallagher, R. P. Campion, K. W. Edmonds, A. W. Rushforth, A. J. Ferguson, P. Nemec

Abstract: Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that… ▽ More Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and discuss contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat. △ Less

Submitted 14 July, 2014; v1 submitted 7 October, 2013; originally announced October 2013.

Comments: 47 pages, 41 figures

Journal ref: Rev. Mod. Phys. 86, 855 (2014)

A charge parity ammeter

Authors: N. J. Lambert, M. Edwards, C. Ciccarelli, A. J. Ferguson

Abstract: A metallic double-dot is measured with radio frequency reflectometry. Changes in the total electron number of the double-dot are determined via single electron tunnelling contributions to the complex electrical impedance. Electron counting experiments are performed by monitoring the impedance, demonstrating operation of a single electron ammeter without the need for external charge detection. A metallic double-dot is measured with radio frequency reflectometry. Changes in the total electron number of the double-dot are determined via single electron tunnelling contributions to the complex electrical impedance. Electron counting experiments are performed by monitoring the impedance, demonstrating operation of a single electron ammeter without the need for external charge detection. △ Less

Submitted 1 October, 2013; originally announced October 2013.

Comments: 11 pages, 4 figures

Journal ref: Nano Lett. 2014, 14, 1148-1152

Observation of a Berry phase anti-dam** spin-orbit torque

Authors: H. Kurebayashi, Jairo Sinova, D. Fang, A. C. Irvine, J. Wunderlich, V. Novak, R. P. Campion, B. L. Gallagher, E. K. Vehstedt, L. P. Zarbo, K. Vyborny, A. J. Ferguson, T. Jungwirth

Abstract: Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-dam** spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative… ▽ More Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-dam** spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative interpretation combines the relativistic spin Hall effect (SHE), making the normal-conductor an injector of a spin-current, with the non-relativistic spin-transfer torque (STT) in the ferromagnet. Remarkably, the SHE in these experiments originates from the Berry phase effect in the band structure of a clean crystal and the anti-dam** STT is also based on a disorder-independent transfer of spin from carriers to magnetization. Here we report the observation of an anti-dam** SOT stemming from an analogous Berry phase effect to the SHE. The SOT alone can therefore induce magnetization dynamics based on a scattering-independent principle. The ferromagnetic semiconductor (Ga,Mn)As we use has a broken space-inversion symmetry in the crystal. This allows us to consider a bare ferromagnetic element which eliminates by design any SHE related contribution to the spin torque. We provide an intuitive picture of the Berry phase origin of the anti-dam** SOT and a microscopic modeling of measured data. △ Less

Submitted 8 June, 2013; originally announced June 2013.

Comments: Send to: [email protected]

Splitting a single Cooper-pair with microwave light

Authors: N. J. Lambert, M. Edwards, A. A. Esmail, F. A. Pollock, S. D. Barrett, B. W. Lovett, A. J. Ferguson

Abstract: We measure an aluminum superconducting double quantum dot and find that its electrical impedance, specifically its quantum capacitance, depends on whether or not it contains a single broken Cooper pair. In this way we are able to observe, in real time, the thermally activated breaking and recombination of Cooper pairs. Furthermore, we apply external microwave light and break single Cooper pairs by… ▽ More We measure an aluminum superconducting double quantum dot and find that its electrical impedance, specifically its quantum capacitance, depends on whether or not it contains a single broken Cooper pair. In this way we are able to observe, in real time, the thermally activated breaking and recombination of Cooper pairs. Furthermore, we apply external microwave light and break single Cooper pairs by the absorption of single microwave photons. △ Less

Submitted 28 March, 2014; v1 submitted 18 April, 2013; originally announced April 2013.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. B 90, 14, 140503 (2014); Appl. Phys. Lett. 109, 112603 (2016); Phys. Rev. B 95, 235413 (2017)

Enhanced Inverse Spin-Hall Effect in Ultrathin Ferromagnetic/Normal Metal Bilayers

Authors: T. D. Skinner, H. Kurebayashi, D. Fang, D. Heiss, A. C. Irvine, A. T. Hindmarch, M. Wang, A. W. Rushforth, A. J. Ferguson

Abstract: We measure electrically detected ferromagnetic resonance in microdevices patterned from ultra-thin Co/Pt bilayers. Spin pum** and rectification voltages are observed and distinguished via their angular dependence. The spin-pum** voltage shows an unexpected increase as the cobalt thickness is reduced below 2 nm. This enhancement allows more efficient conversion of spin to charge current and mot… ▽ More We measure electrically detected ferromagnetic resonance in microdevices patterned from ultra-thin Co/Pt bilayers. Spin pum** and rectification voltages are observed and distinguished via their angular dependence. The spin-pum** voltage shows an unexpected increase as the cobalt thickness is reduced below 2 nm. This enhancement allows more efficient conversion of spin to charge current and motivates a theory modelling the dependence of impurity scattering on surface roughness. △ Less

Submitted 18 October, 2012; originally announced October 2012.

Journal ref: Appl. Phys. Lett. 102, 072401 (2013)

Electrical excitation and detection of magnetic dynamics with impedance matching

Authors: D. Fang, T. Skinner, H. Kurebayashi, R. P. Campion, B. L. Gallagher, A. J. Ferguson

Abstract: Motivated by the prospects of increased measurement bandwidth, improved signal to noise ratio and access to the full complex magnetic susceptibility we develop a technique to extract microwave voltages from our high resistance (10 kΩ) (Ga,Mn)As microbars. We drive magnetization precession with microwave frequency current, using a mechanism that relies on the spin orbit interaction. A capacitively… ▽ More Motivated by the prospects of increased measurement bandwidth, improved signal to noise ratio and access to the full complex magnetic susceptibility we develop a technique to extract microwave voltages from our high resistance (10 kΩ) (Ga,Mn)As microbars. We drive magnetization precession with microwave frequency current, using a mechanism that relies on the spin orbit interaction. A capacitively coupled lambda/2 microstrip resonator is employed as an impedance matching network, enabling us to measure the microwave voltage generated during magnetisation precession. △ Less

Submitted 6 November, 2012; v1 submitted 17 September, 2012; originally announced September 2012.

Comments: (4 pages)

Journal ref: Appl. Phys. Lett. 101, 182402 (2012)

Spin gating electrical current

Authors: C. Ciccarelli, L. P. Zarbo, A. C. Irvine, R. P. Campion, B. L. Gallagher, J. Wunderlich, T. Jungwirth, A. J. Ferguson

Abstract: We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-… ▽ More We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-monotonic behavior. The observed effects are explained by calculations based on the $\mathbf{k}\cdot\mathbf{p}$ kinetic exchange model of ferromagnetism in GaMnAs. Our device inverts the conventional approach for constructing spin transistors: instead of spin-transport controlled by ordinary gates we spin-gate ordinary charge transport. △ Less

Submitted 23 April, 2012; v1 submitted 12 March, 2012; originally announced March 2012.

Comments: 5 pages, 4 figures

A hybrid double-dot in silicon

Authors: M. Fernando Gonzalez-Zalba, Dominik Heiss, Andrew J. Ferguson

Abstract: We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant and SET. We measure the triple points of this hybrid double dot, using simulations to support our results, and show that we can tune the electrostatic coupling be… ▽ More We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant and SET. We measure the triple points of this hybrid double dot, using simulations to support our results, and show that we can tune the electrostatic coupling between the two sub-systems. △ Less

Submitted 18 November, 2011; originally announced November 2011.

Comments: 11 pages, 6 figures

Impedance of the single electron transistor at radio-frequencies

Authors: C. Ciccarelli, A. J. Ferguson

Abstract: We experimentally characterise the impedance of a single electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. Differently from usual rf-SET operations, the excitation signal is applied to the gate of the device. At zero source-drain bias the single electron transistor displays both resistive (Sisyphus resistance) and reactive (tunnelling capacitance) compone… ▽ More We experimentally characterise the impedance of a single electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. Differently from usual rf-SET operations, the excitation signal is applied to the gate of the device. At zero source-drain bias the single electron transistor displays both resistive (Sisyphus resistance) and reactive (tunnelling capacitance) components to its impedance. We study the bias dependence of the complex impedance, investigating its response as the electron tunnel rate becomes large with respect to the driving frequency. The experimental data are compared to values calculated from a master equation model. △ Less

Submitted 17 August, 2011; originally announced August 2011.

Comments: Accepted by New Journal of Physics

Journal ref: New J. Phys., 13 093015 (2011)

Spin-orbit driven ferromagnetic resonance: A nanoscale magnetic characterisation technique

Authors: D. Fang, H. Kurebayashi, J. Wunderlich, K. Vyborny, L. P. Zarbo, R. P. Campion, A. Casiraghi, B. L. Gallagher, T. Jungwirth, A. J. Ferguson

Abstract: We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures patterned from the dilute magnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P). This allows the direct measurement of magnetic anisotropy coefficients and dam** parameters for individual nano-bars. By analysing the ferroma… ▽ More We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures patterned from the dilute magnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P). This allows the direct measurement of magnetic anisotropy coefficients and dam** parameters for individual nano-bars. By analysing the ferromagnetic resonance lineshape, we perform vector magnetometry on the current-induced driving field, observing contributions with symmetries of both the Dresselhaus and Rashba spin-orbit interactions. △ Less

Submitted 10 December, 2010; originally announced December 2010.

Comments: 4 figures

Journal ref: Nature Nanotechnology, 6 413 (2011)

Charge Sensing in Intrinsic Silicon Quantum Dots

Authors: G. J. Podd, S. J. Angus, D. A. Williams, A. J. Ferguson

Abstract: We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many e… ▽ More We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot. △ Less

Submitted 11 February, 2010; originally announced February 2010.

Comments: To be published in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 96, 082104 (2010)

Electrically detected magnetic resonance using radio-frequency reflectometry

Authors: H. Huebl, R. P. Starrett, D. R. McCamey, A. J. Ferguson, L. H. Willems van Beveren

Abstract: The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conve… ▽ More The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conventional readout techniques. This increase in temporal resolution provides a method for future direct observations of spin dynamics in the electrical device characteristics. △ Less

Submitted 12 July, 2009; originally announced July 2009.

Comments: 9 pages, 3 figures

Journal ref: Rev. Sci. Instrum. 80, 114705 (2009)

Low voltage control of ferromagnetism in a semiconductor p-n junction

Authors: M. H. S. Owen, J. Wunderlich, V. Novak, K. Olejnik, 3 J. Zemen, K. Vyborny, S. Ogawa, A. C. Irvine, A. J. Ferguson, H. Sirringhaus, T. Jungwirth

Abstract: The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state me… ▽ More The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state memories. The integration of these two distinct areas of microelectronics in one physical element, with a potentially major impact on the power consumption and scalability of future devices, requires to find efficient means for controlling magnetization electrically. Current induced magnetization switching phenomena represent a promising step towards this goal, however, they relay on relatively large current densities. The direct approach of controlling the magnetization by low-voltage charge depletion effects is seemingly unfeasible as the two worlds of semiconductors and metal ferromagnets are separated by many orders of magnitude in their typical carrier concentrations. Here we demonstrate that this concept is viable by reporting persistent magnetization switchings induced by short electrical pulses of a few volts in an all-semiconductor, ferromagnetic p-n junction. △ Less

Submitted 6 July, 2008; originally announced July 2008.

Comments: 11 pages, 4 figures

Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

Authors: L. H. Willems van Beveren, H. Huebl, D. R. McCamey, T. Duty, A. J. Ferguson, R. G. Clark, M. S. Brandt

Abstract: We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-s… ▽ More We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas. △ Less

Submitted 27 May, 2008; originally announced May 2008.

Comments: 4 pages, 4 figures, submitted to APL

Journal ref: Appl. Phys. Lett. 93, 072102 (2008)

Quasiparticle cooling of a single-Cooper-pair-transistor

Authors: A. J. Ferguson

Abstract: A superconducting tunnel junction is used to directly extract quasiparticles from one of the leads of a single-Cooper-pair-transistor. The consequent reduction in quasiparticle density causes a lower rate of quasiparticle tunneling onto the device. This rate is directly measured by radio-frequency reflectometry. Local cooling may be of direct benefit in reducing the effect of quasiparticles on c… ▽ More A superconducting tunnel junction is used to directly extract quasiparticles from one of the leads of a single-Cooper-pair-transistor. The consequent reduction in quasiparticle density causes a lower rate of quasiparticle tunneling onto the device. This rate is directly measured by radio-frequency reflectometry. Local cooling may be of direct benefit in reducing the effect of quasiparticles on coherent superconducting nanostructures. △ Less

Submitted 11 July, 2008; v1 submitted 22 May, 2008; originally announced May 2008.

Comments: 4 figures

Journal ref: Appl. Phys. Lett. 93, 052501 (2008)

Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots

Authors: M. Mitic, K. D. Petersson, M. C. Cassidy, R. P. Starrett, E. Gauja, A. J. Ferguson, C. Yang, D. N. Jamieson, R. G. Clark, A. S. Dzurak

Abstract: We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers. Metallic contro… ▽ More We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers. Metallic control gates, together with an Al-AlOx single-electron transistor, were positioned on the substrate surface, capacitively coupled to the buried dots. The individual double-dot charge states were probed using source-drain bias spectroscopy combined with non-invasive SET charge sensing. The system was measured in linear (VSD = 0) and non-linear (VSD <> 0) regimes allowing calculations of the relevant capacitances. Simultaneous detection using both SET sensing and source-drain current measurements was demonstrated, providing a valuable combination for the analysis of the system. Evolution of the triple points with applied bias was observed using both charge and current sensing. Coulomb diamonds, showing the interplay between the Coulomb charging effects of the two dots, were measured using simultaneous detection and compared with numerical simulations. △ Less

Submitted 4 February, 2008; originally announced February 2008.

Comments: 7 pages, 6 figures

A quantitative study of quasiparticle traps using the single-Cooper-pair-transistor

Authors: N. A. Court, A. J. Ferguson, Roman Lutchyn, R. G. Clark

Abstract: We use radio-frequency reflectometry to measure quasiparticle tunneling rates in the single-Cooper-pair-transistor. Devices with and without quasiparticle traps in proximity to the island are studied. A $10^2$ to $10^3$-fold reduction in the quasiparticle tunneling rate onto the island is observed in the case of quasiparticle traps. In the quasiparticle trap samples we also measure a commensurat… ▽ More We use radio-frequency reflectometry to measure quasiparticle tunneling rates in the single-Cooper-pair-transistor. Devices with and without quasiparticle traps in proximity to the island are studied. A $10^2$ to $10^3$-fold reduction in the quasiparticle tunneling rate onto the island is observed in the case of quasiparticle traps. In the quasiparticle trap samples we also measure a commensurate decrease in quasiparticle tunneling rate off the island. △ Less

Submitted 15 October, 2007; originally announced October 2007.

Comments: 4 pages, 4 figs

Journal ref: Phys. Rev. B 77, 100501 (2008)

Energy gap measurement of nanostructured thin aluminium films for use in single Cooper-pair devices

Authors: N. A. Court, A. J. Ferguson, R. G. Clark

Abstract: Within the context of superconducting gap engineering, Al-\alox-Al tunnel junctions have been used to study the variation in superconducting gap, $Δ$, with film thickness. Films of thickness 5, 7, 10 and 30 nm were used to form the small area superconductor-insulator-superconductor (SIS) tunnel junctions. In agreement with previous measurements we have observed an increase in the superconducting… ▽ More Within the context of superconducting gap engineering, Al-\alox-Al tunnel junctions have been used to study the variation in superconducting gap, $Δ$, with film thickness. Films of thickness 5, 7, 10 and 30 nm were used to form the small area superconductor-insulator-superconductor (SIS) tunnel junctions. In agreement with previous measurements we have observed an increase in the superconducting energy gap of aluminium with a decrease in film thickness. In addition, we find grain size in small area films with thickness \textbf{$\geq$} 10 nm has no appreciable effect on energy gap. Finally, we utilize 7 and 30 nm films in a single Cooper-pair transistor, and observe the modification of the finite bias transport processes due to the engineered gap profile. △ Less

Submitted 28 June, 2007; originally announced June 2007.

Journal ref: Supercond. Sci. Technol. 21, 015013 (2008)

Gate-controlled charge transfer in Si:P double quantum dots

Authors: F. E. Hudson, A. J. Ferguson, C. C. Escott, A. S. Dzurak, R. G. Clark, D. N. Jamieson, C. Yang

Abstract: We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by undoped silicon tunnel barriers. Occupancy of the dots is controlled by surface gates and monitored using an aluminium single electron transistor which is capa… ▽ More We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by undoped silicon tunnel barriers. Occupancy of the dots is controlled by surface gates and monitored using an aluminium single electron transistor which is capacitively coupled to the dots. We observe a charge stability diagram consistent with the designed many-electron double-dot system and this agrees well with capacitance modelling of the structure. We discuss the significance of these results to the realisation of smaller devices which may be used as charge or spin qubits. △ Less

Submitted 24 March, 2008; v1 submitted 19 December, 2006; originally announced December 2006.

Comments: accepted for publication in Nanotechnology

Microsecond resolution of quasiparticle tunneling in the single-Cooper-pair-transistor

Authors: A. J. Ferguson, N. A. Court, F. E. Hudson, R. G. Clark

Abstract: We present radio-frequency measurements on a single-Cooper-pair-transistor in which individual quasiparticle poisoning events were observed with microsecond temporal resolution. Thermal activation of the quasiparticle dynamics is investigated, and consequently, we are able to determine energetics of the poisoning and un-poisoning processes. In particular, we are able to assign an effective quasi… ▽ More We present radio-frequency measurements on a single-Cooper-pair-transistor in which individual quasiparticle poisoning events were observed with microsecond temporal resolution. Thermal activation of the quasiparticle dynamics is investigated, and consequently, we are able to determine energetics of the poisoning and un-poisoning processes. In particular, we are able to assign an effective quasiparticle temperature to parameterize the poisoning rate. △ Less

Submitted 4 August, 2006; v1 submitted 17 April, 2006; originally announced April 2006.

Comments: 4 pages, 4 figs

Spin-Dependent Quasiparticle Transport in Aluminum Single Electron Transistors

Authors: A. J. Ferguson, S. E. Andresen, R. Brenner, R. G. Clark

Abstract: We investigate the effect of Zeeman-splitting on quasiparticle transport in normal-superconducting-normal (NSN) aluminum single electron transistors (SETs). In the above-gap transport the interplay of Coulomb blockade and Zeeman-splitting leads to spin-dependence of the sequential tunneling. This creates regimes where either one or both spin species can tunnel onto or off the island. At lower bi… ▽ More We investigate the effect of Zeeman-splitting on quasiparticle transport in normal-superconducting-normal (NSN) aluminum single electron transistors (SETs). In the above-gap transport the interplay of Coulomb blockade and Zeeman-splitting leads to spin-dependence of the sequential tunneling. This creates regimes where either one or both spin species can tunnel onto or off the island. At lower biases, spin-dependence of the single quasiparticle state is studied and operation of the device as a bipolar spin filter is suggested. △ Less

Submitted 28 July, 2006; v1 submitted 24 February, 2006; originally announced February 2006.

Comments: 4 pages, 4 figures

Ion implanted Si:P double-dot with gate tuneable interdot coupling

Authors: V. C. Chan, T. M. Buehler, A. J. Ferguson, D. R. McCamey, D. J. Reilly, A. S. Dzurak, R. G. Clark, C. Yang, D. N. Jamieson

Abstract: We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the charging behavior of the double-dot system to be studied independently of current transport. Using an electrostatic gate, the interdot coupling can be tuned fr… ▽ More We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the charging behavior of the double-dot system to be studied independently of current transport. Using an electrostatic gate, the interdot coupling can be tuned from weak to strong coupling. In the weak interdot coupling regime, the system exhibits well-defined double-dot charging behavior. By contrast, in the strong interdot coupling regime, the system behaves as a single-dot. △ Less

Submitted 23 February, 2006; originally announced February 2006.

Comments: 11 pages, 5 figures

Coulomb blockade in a nanoscale phosphorus-in-silicon island

Authors: F. E. Hudson, A. J. Ferguson, C. Yang, D. N. Jamieson, A. S. Dzurak, R. G. Clark

Abstract: We study the low temperature electrical transport behaviour of a silicon single electron transistor. The island and leads are defined by patterned phosphorus doped regions achieved by ion implantation through a polymer resist mask. In the device a 50 nm diameter island, containing ~600 donors and having a metallic density of states, is separated from source and drain leads by undoped silicon tun… ▽ More We study the low temperature electrical transport behaviour of a silicon single electron transistor. The island and leads are defined by patterned phosphorus doped regions achieved by ion implantation through a polymer resist mask. In the device a 50 nm diameter island, containing ~600 donors and having a metallic density of states, is separated from source and drain leads by undoped silicon tunnel barriers. The central island and tunnel barriers are covered by a surface gate in a field effect transistor geometry allowing the coupling between the leads and island to be controlled. Coulomb blockade due to charging of the doped island is measured, the oscillation period is observed to be constant while the charging energy is dependent on the surface gate voltage. We discuss the possibilities of approaching the few electron regime in these structures, with the aim of observing and manipulating discrete quantum mechanical states. △ Less

Submitted 20 February, 2006; v1 submitted 18 October, 2005; originally announced October 2005.

Comments: accepted into the proceedings of MNE 2005 in Microelectronic Engineering