Plasma-enhanced atomic layer deposition of titanium nitride for superconducting devices
Authors:
John Femi-Oyetoro,
Sasha Sypkens,
Henry LeDuc,
Matthew Dickie,
Andrew Beyer,
Peter Day,
Frank Greer
Abstract:
This study presents a comprehensive investigation into the exceptional superconducting attributes of titanium nitride (TiN) achieved through plasma-enhanced atomic layer deposition (PEALD) on both planar and intricate three-dimensional (3D) structures. We introduced an additional substrate biasing cycle to densify the film and remove ligand residues, augmenting the properties while minimizing impu…
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This study presents a comprehensive investigation into the exceptional superconducting attributes of titanium nitride (TiN) achieved through plasma-enhanced atomic layer deposition (PEALD) on both planar and intricate three-dimensional (3D) structures. We introduced an additional substrate biasing cycle to densify the film and remove ligand residues, augmenting the properties while minimizing impurities. While reactive-sputtered TiN films exhibit high quality, our technique ensures superior uniformity by consistently maintaining a desired sheet resistance greater than 95 percent across a 6inch wafer, a critical aspect for fabricating extensive arrays of superconducting devices and optimizing wafer yield. Moreover, our films demonstrate exceptional similarity to conventional reactive-sputtered films, consistently reaching a critical temperature (Tc) of 4.35 K with a thickness of around 40 nm. This marks a notable achievement compared to previously reported ALD-based superconducting TiN. Using the same process as for planar films, we obtained Tc for aspect ratios (ARs) ranging from 2 to 40, observing a Tc of approximately 2 K for ARs between 2 and 10.5. We elucidate the mechanisms contributing to the limitations and degradation of superconducting properties over these aggressive 3D structures. Our results seamlessly align with both current and next-generation superconducting technologies, meeting stringent criteria for thin-film constraints, large-scale deposition, conformality, 3D integration schemes, and yield optimization.
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Submitted 15 December, 2023;
originally announced December 2023.
Long-term Stability of Bilayer MoS2 in Ambient Air
Authors:
John Femi-Oyetoro,
Kevin Yao,
Evan Hathaway,
Yan Jiang,
Ibikunle Ojo,
Brian Squires,
Arup Neogi,
**gbiao Cui,
Usha Philipose,
Nithish Kumar Gadiyaram,
Weidong Zhou,
Jose Perez
Abstract:
We report that chemical vapor deposition (CVD) grown bilayer and thicker-layered MoS2 are structurally and optically stable under ambient conditions, in comparison to CVD-grown monolayer MoS2 and other transition metal dichalcogenides (TMDs) that have been reported to degrade under the same conditions, hindering their many potential applications. We present atomic force microscopy (AFM), and Raman…
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We report that chemical vapor deposition (CVD) grown bilayer and thicker-layered MoS2 are structurally and optically stable under ambient conditions, in comparison to CVD-grown monolayer MoS2 and other transition metal dichalcogenides (TMDs) that have been reported to degrade under the same conditions, hindering their many potential applications. We present atomic force microscopy (AFM), and Raman and photoluminescence (PL) spectroscopy measurements of as-grown and preheated multilayer MoS2 after exposure to ambient conditions for periods of up to 2 years. The AFM images show that, under ambient conditions, as-grown and preheated bilayer and thicker-layered MoS2 films do not exhibit the growth of dendrites that is characteristic of monolayer degradation. Dendrites are observed to stop at the monolayer-bilayer boundary. Raman and PL spectra of the aged bilayer and thicker-layered films are comparable to those of as-grown films. The greater stability of bilayers and thicker layers supports a previously reported mechanism for monolayer degradation involving Förster resonance energy transfer. Our results show that bilayer and thicker-layered TMDs are promising materials for applications requiring ambient stability.
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Submitted 13 October, 2020;
originally announced October 2020.
