Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
Authors:
M. Wang,
C. Andrews,
S. Reimers,
O. J. Amin,
P. Wadley,
R. P. Campion,
S. F. Poole,
J. Felton,
K. W. Edmonds,
B. L. Gallagher,
A. W. Rushforth,
O. Makarovsky,
K. Gas,
M. Sawicki,
D. Kriegner,
J. Zubac,
K. Olejnik,
V. Novak,
T. Jungwirth,
M. Shahrokhvand,
U. Zeitler,
S. S. Dhesi,
F. Maccherozzi
Abstract:
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a b…
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Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields.
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Submitted 21 June, 2021; v1 submitted 27 November, 2019;
originally announced November 2019.
