Showing 1–6 of 6 results for author: Feezell, D

Multiple-Carrier-Lifetime Model for Carrier Dynamics in InGaN/GaN LEDs with Non-Uniform Carrier Distribution

Authors: Xuefeng Li, Elizabeth DeJong, Rob Armitage, Daniel Feezell

Abstract: We introduce a multiple-carrier-lifetime model (MCLM) for light-emitting diodes (LEDs) with non-uniform carrier distribution, such as in multiple-quantum-well (MQW) structures. By employing the MCLM, we successfully explain the modulation response of V-pit engineered MQW LEDs, which exhibit an S21 roll-off slower than -20 dB/decade. Using the proposed model and employing a gradient descent method,… ▽ More We introduce a multiple-carrier-lifetime model (MCLM) for light-emitting diodes (LEDs) with non-uniform carrier distribution, such as in multiple-quantum-well (MQW) structures. By employing the MCLM, we successfully explain the modulation response of V-pit engineered MQW LEDs, which exhibit an S21 roll-off slower than -20 dB/decade. Using the proposed model and employing a gradient descent method, we extract effective recombination and escape lifetimes by averaging the carrier behavior across the quantum wells. Our results reveal slower effective carrier recombination and escape in MQW LEDs compared with LEDs emitting from a single QW, indicating the advantages of lower carrier density achieved through V-pit engineering. Notably, the effective carrier recombination time is more than one order of magnitude lower than the effective escape lifetime, suggesting that most carriers in the quantum wells recombine, while the escape process remains weak. To ensure the reliability and robustness of the MCLM, we subject it to a comprehensive three-fold validation process. This work confirms the positive impact of spreading carriers into several QWs through V-pit engineering. In addition, the MCLM is applicable to other LEDs with non-uniform carrier distribution, such as micro-LEDs with significant surface recombination and non-uniform lateral carrier profiles. △ Less

Submitted 25 October, 2023; originally announced October 2023.

Comments: 21 pages, 11 figures

Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes

Authors: Nick Pant, Xuefeng Li, Elizabeth DeJong, Daniel Feezell, Rob Armitage, Emmanouil Kioupakis

Abstract: III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. Using first-principles multi-scale modelling that accurately captures the competition between polarization-charge screening, phase-space filling, and many-body plasma renormalization, we explain the current-dependent spectral charac… ▽ More III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. Using first-principles multi-scale modelling that accurately captures the competition between polarization-charge screening, phase-space filling, and many-body plasma renormalization, we explain the current-dependent spectral characteristics of polar III-nitride LEDs fabricated with state-of-the-art quantum wells. Our analysis uncovers a fundamental connection between carrier dynamics and the injection-dependent spectral characteristics of light-emitting materials. For example, polar III-nitride LEDs offer poor control over their injection-dependent color purity due to their poor hole transport and slow carrier recombination dynamics, which forces them to operate at or near degenerate carrier densities. Designs that accelerate carrier recombination and transport and reduce the carrier density required to operate LEDs at a given current density lessen their injection-dependent wavelength shift and linewidth broadening. △ Less

Submitted 15 November, 2022; v1 submitted 26 September, 2022; originally announced September 2022.

Comments: Supplementary material attached at the end of the document

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

Authors: N. A. Sanford, P. T. Blanchard, M. D. Brubaker, A. K. Rishinaramangalam, Q. Zhang, A. Roshko, D. F. Feezell, B. D. B. Klein, A. V. Davydov

Abstract: Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four sample types were examined with (RBS determined) x = 0.030, 0.034, 0.056, and 0.112. The respective In(x)Ga(1-x)N layer thicknesses were 330 nm, 327 nm, 360 nm, and… ▽ More Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four sample types were examined with (RBS determined) x = 0.030, 0.034, 0.056, and 0.112. The respective In(x)Ga(1-x)N layer thicknesses were 330 nm, 327 nm, 360 nm, and 55 nm. APT data were collected at (fixed) laser pulse energy (PE) selected within the range of (2-1000) fJ. Sample temperatures were = 54 K. PE within (2-50) fJ yielded x values that agreed with RBS (within uncertainty) and were comparatively insensitive to region-of-interest (ROI) geometry and orientation. By contrast, approximate stoichiometry was only found in the GaN portions of the samples provided PE was within (5-20) fJ and the analyses were confined to cylindrical ROIs (of diameters =20 nm) that were coaxial with the specimen tips. m-plane oriented tips were derived from c-axis grown, core-shell, GaN/In(x)Ga(1-x)N nanorod heterostructures. Compositional analysis along [0 0 0 1] (transverse to the long axis of the tip), of these m-plane samples revealed a spatial asymmetry in charge-state ratio (CSR) and a corresponding asymmetry in the resultant tip shape along this direction; no asymmetry in CSR or tip shape was observed for analysis along [-1 2-1 0]. Simulations revealed that the electric field strength at the tip apex was dominated by the presence of a p-type inversion layer, which developed under typical tip-electrode bias conditions for the n-type do** levels considered. Finally, both c-plane and m-plane sample types showed depth-dependent variations in absolute ion counts that depended upon ROI placement. △ Less

Submitted 11 February, 2021; originally announced February 2021.

Comments: 45 pages total, which includes 22 figures

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Authors: Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam, Yu Kee Ooi, Michael A. Scarpulla, Daniel Feezell, Sriram Krishnamoorthy

Abstract: We report on silicon delta do** of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. Electron sheet charge density in the range of 2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nm to 3.5 nm is meas… ▽ More We report on silicon delta do** of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. Electron sheet charge density in the range of 2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nm to 3.5 nm is measured. We also demonstrate a high density (6.4e12 cm-2) degenerate two-dimensional electron gas using a delta-doped \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure.The total charge could also include a contribution from a parallel channel in the \b{eta}-(Al0.26Ga0.74)2O3 alloy barrier. △ Less

Submitted 1 March, 2020; v1 submitted 28 October, 2019; originally announced October 2019.

MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

Authors: Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley, Arkka Bhattacharyya, Daniel Feezell, Sriram Krishnamoorthy

Abstract: We report on n-type degenerate do** in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation do** in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room temperature hall measurements showed a high carrier concentration of 6x101… ▽ More We report on n-type degenerate do** in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation do** in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room temperature hall measurements showed a high carrier concentration of 6x1018-7.3x1019 cm-3 with a corresponding electron mobility of 53-27 cm2/V.s in uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 layers. Modulation do** is used to realize a total electron sheet charge of 2.3x1012 cm-2 in a \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure using a uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 barrier layer and a thin spacer layer. △ Less

Submitted 11 September, 2019; originally announced September 2019.

Journal ref: Appl. Phys. Express 12 111004 (2019)

Explanation of low efficiency droop in semipolar $(20\bar 2\bar 1)$ InGaN/GaN LEDs through evaluation of carrier recombination coefficients

Authors: Morteza Monavarian, Arman Rashidi, Andrew A. Aragon, Sang H. Oh, Mohsen Nami, Steve P. DenBaars, Daniel F. Feezell

Abstract: We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar $(20\bar 2\bar 1)$ InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier lifetime is analyzed for various injection current densities from 5 $A/cm^2$ to 10 $kA/cm^2$, and the corresponding carrier densities are obtained. The coupling of int… ▽ More We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar $(20\bar 2\bar 1)$ InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier lifetime is analyzed for various injection current densities from 5 $A/cm^2$ to 10 $kA/cm^2$, and the corresponding carrier densities are obtained. The coupling of internal quantum efficiency and differential carrier lifetime vs injected carrier density ($n$) enables the separation of the radiative and nonradiative recombination lifetimes and the extraction of the Shockley-Read-Hall (SRH) nonradiative ($A$), radiative ($B$), and Auger ($C$) recombination coefficients and their $n$-dependency considering the saturation of the SRH recombination rate and phase-space filling. The results indicate a three to four-fold higher $A$ and a nearly two-fold higher $B_0$ for this semipolar orientation compared to that of $c$-plane reported using a similar approach [A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010)]. In addition, the carrier density in semipolar $(20\bar 2\bar 1)$ is found to be lower than the carrier density in $c$-plane for a given current density, which is important for suppressing efficiency droop. The semipolar LED also shows a two-fold lower $C_0$ compared to $c$-plane, which is consistent with the lower relative efficiency droop for the semipolar LED (57% vs. 69%). The lower carrier density, higher $B_0$ coefficient, and lower $C_0$ (Auger) coefficient are directly responsible for the high efficiency and low efficiency droop reported in semipolar $(20\bar 2\bar 1)$ LEDs. △ Less

Submitted 9 June, 2017; originally announced June 2017.

Comments: The text is 13 pages and includes 5 figures