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Path distributions for describing eigenstates of orbital angular momentum
Authors:
Randall M. Feenstra
Abstract:
The manner in which probability amplitudes of paths sum up to form wave functions of orbital angular momentum eigenstates is described. Using a generalization of stationary-phase analysis, distributions are derived that provide a measure of how paths contribute towards any given eigenstate. In the limit of long travel-time, these distributions turn out to be real-valued, non-negative functions of…
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The manner in which probability amplitudes of paths sum up to form wave functions of orbital angular momentum eigenstates is described. Using a generalization of stationary-phase analysis, distributions are derived that provide a measure of how paths contribute towards any given eigenstate. In the limit of long travel-time, these distributions turn out to be real-valued, non-negative functions of a momentum variable that describes classical travel between the endpoints of a path (with the paths explicitly including nonclassical ones, described in terms of elastica). The distributions are functions of both this characteristic momentum as well as a polar angle that provides a tilt, relative to the z-axis of the chosen coordinate system, of the geodesic that connects the endpoints. The resulting description provides a replacement for the well-known "vector model" for describing orbital angular momentum, and importantly, it includes treatment of the case when the quantum number $\ell$ is zero (i.e., s-states).
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Submitted 7 May, 2024; v1 submitted 5 August, 2023;
originally announced August 2023.
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Path distributions for describing eigenstates of the harmonic oscillator and other 1-dimensional problems
Authors:
Randall M. Feenstra
Abstract:
The manner in which probability amplitudes of paths sum up to form wave functions of a harmonic oscillator, as well as other, simple 1-dimensional problems, is described. Using known, closed-form, path-based propagators for each problem, an integral expression is written that describes the wave function. This expression conventionally takes the form of an integral over initial locations of a parti…
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The manner in which probability amplitudes of paths sum up to form wave functions of a harmonic oscillator, as well as other, simple 1-dimensional problems, is described. Using known, closed-form, path-based propagators for each problem, an integral expression is written that describes the wave function. This expression conventionally takes the form of an integral over initial locations of a particle, but it is re-expressed here in terms of a characteristic momentum associated with motion between the endpoints of a path. In this manner, the resulting expression can be analyzed using a generalization of stationary-phase analysis, leading to distributions of paths that exactly describe each eigenstate. These distributions are valid for all travel times, but when evaluated for long times they turn out to be real, non-negative functions of the characteristic momentum. For the harmonic oscillator in particular, a somewhat broad distribution is found, peaked at value of momentum that corresponds to a classical energy which in turn equals the energy eigenvalue for the state being described.
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Submitted 8 August, 2023; v1 submitted 19 June, 2023;
originally announced June 2023.
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Spanish philosophers perceptions of pay to publish and open access: books versus journals, more than a financial dilemma
Authors:
Ramon A. Feenstra,
Emilio Delgado Lopez-Cozar
Abstract:
This study examines habits and perceptions related to pay to publish and open access practices in fields that have attracted little research to date: philosophy and ethics. The study is undertaken in the Spanish context, where the culture of publication and the book and journal publishing industry has some specific characteristics with regard to paying to publish, such as not offering open access…
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This study examines habits and perceptions related to pay to publish and open access practices in fields that have attracted little research to date: philosophy and ethics. The study is undertaken in the Spanish context, where the culture of publication and the book and journal publishing industry has some specific characteristics with regard to paying to publish, such as not offering open access distribution of books published for a fee. The study draws on data from a survey of 201 researchers, a public debate with 26 researchers, and 14 in-depth interviews. The results reveal some interesting insights on the criteria researchers apply when selecting publishers and journals for their work, the extent of paying to publish (widespread in the case of books and modest for journals) and the debates that arise over the effects it has on manuscript review and unequal access to resources to cover publication fees. Data on the extent of open access and the researchers views on dissemination of publicly funded research are also presented.
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Submitted 20 May, 2021; v1 submitted 17 May, 2021;
originally announced May 2021.
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The footprint of a metrics-based research evaluation system on Spanish philosophical scholarship: an analysis of researchers perceptions
Authors:
Ramon A. Feenstra,
Emilio Delgado Lopez-Cozar
Abstract:
The use of bibliometric indicators in research evaluation has a series of complex impacts on academic inquiry. These systems have gradually spread into a wide range of locations and disciplines, including the humanities. The aim of the present study is to examine their effects as perceived by philosophy researchers in Spain, a country where bibliometric indicators have long been used to evaluate r…
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The use of bibliometric indicators in research evaluation has a series of complex impacts on academic inquiry. These systems have gradually spread into a wide range of locations and disciplines, including the humanities. The aim of the present study is to examine their effects as perceived by philosophy researchers in Spain, a country where bibliometric indicators have long been used to evaluate research. The study combines data from a self-administered questionnaire completed by 201 researchers and from 14 in-depth interviews with researchers selected according to their affiliation, professional category, gender and area of knowledge. Results show that the evaluation system is widely perceived to affect research behaviour in significant ways, particularly related to publication practices (document type and publication language), the transformation of research agendas and the neglect of teaching work, as well as increasing research misconduct and negatively affecting mental health. Although to a lesser extent, other consequences included increased research productivity and enhanced transparency and impartiality in academic selection processes.
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Submitted 22 March, 2021;
originally announced March 2021.
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Acquisition and Analysis of Scanning Tunneling Spectroscopy Data $-$ WSe$_2$ Monolayer
Authors:
Randall M. Feenstra,
Grayson R. Frazier,
Yi Pan,
Stefan Fölsch,
Yu-Chuan Lin,
Bhakti Jariwala,
Kehao Zhang,
Joshua A. Robinson
Abstract:
Acquisition and analysis is described for scanning tunneling spectroscopy data acquired from a monolayer of WSe$_2$ grown on epitaxial graphene on SiC. Curve fitting of the data is performed, in order to deduce band-edge energies. In addition to describing the details of the theoretical curves used for the fitting, the acquisition and analysis methods are also discussed within the larger context o…
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Acquisition and analysis is described for scanning tunneling spectroscopy data acquired from a monolayer of WSe$_2$ grown on epitaxial graphene on SiC. Curve fitting of the data is performed, in order to deduce band-edge energies. In addition to describing the details of the theoretical curves used for the fitting, the acquisition and analysis methods are also discussed within the larger context of the historical development of scanning tunneling spectroscopy techniques.
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Submitted 28 November, 2020;
originally announced November 2020.
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An unexplored MBE growth mode reveals new properties of superconducting NbN
Authors:
John Wright,
Celesta Chang,
Dacen Waters,
Felix Lüpke,
Lucy Raymond,
Rosalyn Koscica,
Guru Khalsa,
Randall Feenstra,
David Muller,
Huili G. Xing,
Debdeep Jena
Abstract:
Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal m…
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Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal metal resistivities as low as 37$μΩ$-cm and superconducting critical temperatures in excess of 15 K. Most remarkably, a reversal of the sign of the Hall coefficient is observed as the NbN films are cooled, and the high material quality allows the first imaging of Abrikosov vortex lattices in this superconductor.
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Submitted 23 December, 2020; v1 submitted 21 August, 2020;
originally announced August 2020.
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Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions
Authors:
Shruti Subramanian,
Quinn T. Campbell,
Simon Moser,
Jonas Kiemle,
Philipp Zimmermann,
Paul Seifert,
Florian Sigger,
Deeksha Sharma,
Hala Al-Sadeg,
Michael Labella III,
Dacen Waters,
Randall M. Feenstra,
Roland J. Koch,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Ismaila Dabo,
Alexander Holleitner,
Thomas E. Beechem,
Ursula Wurstbauer,
Joshua A. Robinson
Abstract:
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x large…
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Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent map** allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.
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Submitted 25 June, 2020;
originally announced June 2020.
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Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS$_2$-WSe$_2$ Heterobilayers
Authors:
Dacen Waters,
Yifan Nie,
Felix Lüpke,
Yi Pan,
Stefan Fölsch,
Yu-Chuan Lin,
Bhakti Jariwala,
Kehao Zhang,
Chong Wang,
Hongyan Lv,
Kyeongjae Cho,
Di Xiao,
Joshua A. Robinson,
Randall M. Feenstra
Abstract:
It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment ($θ=0^\circ$), associated with flat bands in the Brillouin zone of the moiré pattern formed due to the lattice mismatch of the two layers. Peaks in the local density of states and confinement in a MoS$_2$/WSe$_2$ system was qualitatively de…
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It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment ($θ=0^\circ$), associated with flat bands in the Brillouin zone of the moiré pattern formed due to the lattice mismatch of the two layers. Peaks in the local density of states and confinement in a MoS$_2$/WSe$_2$ system was qualitatively described only considering local stacking arrangements, which cause band edge energies to vary spatially. In this work, we report the presence of large in-plane strain variation across the moiré unit cell of a $θ=0^\circ$ MoS$_2$/WSe$_2$ heterobilayer, and show that inclusion of strain variation and out-of-plane displacement in density functional theory calculations greatly improves their agreement with the experimental data. We further explore the role of twist-angle by showing experimental data for a twisted MoS$_2$/WSe$_2$ heterobilayer structure with twist angle of $θ=15^\circ$, that exhibits a moiré pattern but no confinement.
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Submitted 16 April, 2020;
originally announced April 2020.
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Formation of Graphene atop a Si adlayer on the C-face of SiC
Authors:
Jun Li,
Qingxiao Wang,
Guowei He,
Michael Widom,
Lydia Nemec,
Volker Blum,
Moon Kim,
Patrick Rinke,
Randall M. Feenstra
Abstract:
The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6). Various surface reconstructions are observed, both with and without the presence of an overlying graphene layer (which spontaneously forms at sufficiently high temperatures). Based on cross-sectional scanning transmiss…
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The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6). Various surface reconstructions are observed, both with and without the presence of an overlying graphene layer (which spontaneously forms at sufficiently high temperatures). Based on cross-sectional scanning transmission electron microscopy measurements, the interface structure that forms in the presence of the graphene is found to contain 1.4 - 1.7 monolayers (ML) of Si, a somewhat counter-intuitive result since, when the graphene forms, the system is actually under C-rich conditions. Using ab initio thermodynamics, it is demonstrated that there exists a class of Si-rich surfaces containing about 1.3 ML of Si that are stable on the surface (even under C-rich conditions) at temperatures above about 400 K. The structures that thus form consist of Si adatoms atop a Si adlayer on the C-face of SiC, with or without the presence of overlying graphene.
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Submitted 13 August, 2019; v1 submitted 10 May, 2019;
originally announced May 2019.
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Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe$_2$
Authors:
Felix Lüpke,
Dacen Waters,
Sergio C. de la Barrera,
Michael Widom,
David G. Mandrus,
Jiaqiang Yan,
Randall M. Feenstra,
Benjamin M. Hunt
Abstract:
The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present…
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The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present study, we use a novel dry-transfer flip technique to place atomically-thin layers of WTe$_2$ on a van der Waals superconductor, NbSe$_2$. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate atomically clean surfaces and interfaces and the presence of a proximity-induced superconducting gap in the WTe$_2$ for thicknesses from a monolayer up to 7 crystalline layers. At the edge of the WTe$_2$ monolayer, we show that the superconducting gap coexists with the characteristic spectroscopic signature of the QSH edge state. Taken together, these observations provide conclusive evidence for proximity-induced superconductivity in the QSH edge state in WTe$_2$, a crucial step towards realizing 1D topological superconductivity and Majorana bound states in this van der Waals material platform.
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Submitted 16 July, 2019; v1 submitted 1 March, 2019;
originally announced March 2019.
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Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene
Authors:
Patrick C. Mende,
Jun Li,
Randall M. Feenstra
Abstract:
Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees relative to the surface graphene. Low-energy electron microscopy is employed to provide definitive signatures of the number and composition of two-dimensional (2D) p…
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Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees relative to the surface graphene. Low-energy electron microscopy is employed to provide definitive signatures of the number and composition of two-dimensional (2D) planes across the surface. These grains are found to form by substitution for the surface graphene, with the C atoms produced by this substitution then being incorporated below the h-BN (at the interface between the existing graphene and the SiC) to form a new graphene plane.
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Submitted 6 July, 2018;
originally announced July 2018.
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Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices
Authors:
Randall M. Feenstra,
Sergio C. de la Barrera,
Jun Li,
Yifan Nie,
Kyeongjae Cho
Abstract:
Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G) vertical structures. Detailed comparison with prior experimental results is made, focusing on the magnitude of the achievable tunnel current. With inclusion of the effects of translational and rotational misalignment of…
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Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G) vertical structures. Detailed comparison with prior experimental results is made, focusing on the magnitude of the achievable tunnel current. With inclusion of the effects of translational and rotational misalignment of the graphene and the h-BN, predicted currents are found to be about 15x larger than experimental values. A reduction in this discrepancy, to a factor of 2.5x, is achieved by utilizing a realistic size for the band gap of the h-BN, hence affecting the exponential decay constant for the tunneling.
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Submitted 9 January, 2018; v1 submitted 29 December, 2017;
originally announced December 2017.
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Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers
Authors:
Yi Pan,
Stefan Fölsch,
Yifan Nie,
Dacen Waters,
Yu-Chuan Lin,
Bhakti Jariwala,
Kehao Zhang,
Kyeongjae Cho,
Joshua A. Robinson,
Randall M. Feenstra
Abstract:
A two-dimensional (2D) hetero-bilayer system consisting of MoS2 on WSe2, deposited on epitaxial graphene, is studied by scanning tunneling microscopy and spectroscopy at temperatures of 5 and 80 K. A moiré pattern is observed, arising from lattice mismatch of 3.7% between the MoS2 and WSe2. Significant energy shifts are observed in tunneling spectra observed at the maxima of the moiré corrugation,…
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A two-dimensional (2D) hetero-bilayer system consisting of MoS2 on WSe2, deposited on epitaxial graphene, is studied by scanning tunneling microscopy and spectroscopy at temperatures of 5 and 80 K. A moiré pattern is observed, arising from lattice mismatch of 3.7% between the MoS2 and WSe2. Significant energy shifts are observed in tunneling spectra observed at the maxima of the moiré corrugation, as compared with spectra obtained at corrugation minima, consistent with prior work. Furthermore, at the minima of the moiré corrugation, sharp peaks in the spectra at energies near the band edges are observed, for spectra acquired at 5 K. The peaks correspond to discrete states that are confined within the moiré unit cells. Conductance map** is employed to reveal the detailed structure of the wave functions of the states. For measurements at 80 K, the sharp peaks in the spectra are absent, and conductance maps of the band edges reveal little structure.
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Submitted 31 January, 2018; v1 submitted 30 November, 2017;
originally announced December 2017.
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Growth and electronic properties of nanolines on TiO2-terminated SrTiO3(001) surfaces
Authors:
W. Yan,
W. Sitaputra,
M. Skowronski,
R. M. Feenstra
Abstract:
Surfaces of homoepitaxially grown TiO2-terminated SrTiO3(001) were studied in situ with scanning tunneling microscopy and spectroscopy. By controlling the Ti/Sr ratio, two-dimensional domains of highly ordered linear nanostructures, so-called "nanolines", are found to form on the surface. To further study how the surface structure affects the band structure, spectroscopic studies of these surfaces…
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Surfaces of homoepitaxially grown TiO2-terminated SrTiO3(001) were studied in situ with scanning tunneling microscopy and spectroscopy. By controlling the Ti/Sr ratio, two-dimensional domains of highly ordered linear nanostructures, so-called "nanolines", are found to form on the surface. To further study how the surface structure affects the band structure, spectroscopic studies of these surfaces were performed. Our results reveal significantly more band bending for surfaces with the nanolines, indicative of an acceptor state associated with these features. Additionally, an in-gap state is observed on nanoline surfaces grown under high oxygen deficient conditions. This state appears to be the same as that observed previously, arising from the (++/+) transition level of surface oxygen vacancies.
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Submitted 21 September, 2017;
originally announced September 2017.
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Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy
Authors:
P. C. Mende,
Q. Gao,
A. Ismach,
H. Chou,
M. Widom,
R. Ruoff,
L. Colombo,
R. M. Feenstra
Abstract:
The thickness and interfacial geometry of hexagonal boron nitride (hBN) films grown by chemical vapor deposition on polycrystalline nickel foils is studied using low-energy electron microscopy (LEEM). The reflectivity of the electrons, measured over an energy range of 0 - 20 eV, reveals distinct minima and maxima. The measured data is compared with simulations based on a first-principles descripti…
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The thickness and interfacial geometry of hexagonal boron nitride (hBN) films grown by chemical vapor deposition on polycrystalline nickel foils is studied using low-energy electron microscopy (LEEM). The reflectivity of the electrons, measured over an energy range of 0 - 20 eV, reveals distinct minima and maxima. The measured data is compared with simulations based on a first-principles description of the electronic structure of the material. From this comparison, the number of hBN layers and the separation between the lowest hBN layer and the nickel surface is deduced. The coupling of interlayer states of the hBN to both image-potential and Shockley-type surface states of the nickel is discussed, and the dependence of the reflectivity spectra on the surface orientation of nickel grains is examined.
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Submitted 4 February, 2017; v1 submitted 15 November, 2016;
originally announced November 2016.
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Characteristics of Interlayer Tunneling Field Effect Transistors Computed by a "DFT-Bardeen" Method
Authors:
Jun Li,
Yifan Nie,
Kyeongjae Cho,
Randall M. Feenstra
Abstract:
Theoretical predictions are made for the current-voltage characteristics of two-dimensional heterojunction interlayer tunneling field-effect transistors (Thin-TFETs), focusing on the magnitude of the current that is achievable in such devices. A theory based on the Bardeen tunneling method is employed, using wavefunctions from first-principles density-functional theory. This method permits conveni…
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Theoretical predictions are made for the current-voltage characteristics of two-dimensional heterojunction interlayer tunneling field-effect transistors (Thin-TFETs), focusing on the magnitude of the current that is achievable in such devices. A theory based on the Bardeen tunneling method is employed, using wavefunctions from first-principles density-functional theory. This method permits convenient incorporation of differing materials into the source and drain electrodes, i.e. with different crystal structures, lattice constants, and/or band structures. Large variations in the tunnel currents are found, depending on the particular two-dimensional materials used for the source and drain electrodes. Tunneling between states derived from the center (Gamma-point) of the Brillouin zone (BZ) is found, in general, to lead to larger current than for zone-edge (e.g. K-point) states. Differences, as large as an order of magnitude, between the present results and various prior predictions are discussed. Predicted values for the tunneling currents, including subthreshold swing, are compared with benchmark values for low-power digital applications. Contact resistance is considered and its effect on the tunneling currents is demonstrated.
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Submitted 30 October, 2016;
originally announced October 2016.
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Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices
Authors:
Yanfei Yang,
Guangjun Cheng,
Patrick Mende,
Irene G. Calizo,
Randall M. Feenstra,
Chiashain Chuang,
Chieh-Wen Liu,
Chieh-I Liu,
George R. Jones,
Angela R. Hight Walker,
Randolph E. Elmquist
Abstract:
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of Rxy = h/2e^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain.…
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Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of Rxy = h/2e^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular do** in a second device reduced the carrier concentration close to the Dirac point(n ~ 1E10 (1/cm^2)), where mobility of 43700 cm^2/Vs is measured over an area of 10 mm^2. Atomic force, confocal optical, and Raman microscopies are used to characterize the large-scale devices, and reveal improved SiC terrace topography and the structure of the graphene layer. Our results show that the structural uniformity of epitaxial graphene produced by face-to-graphite processing contributes to millimeter-scale transport homogeneity, and will prove useful for scientific and commercial applications.
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Submitted 24 June, 2016;
originally announced June 2016.
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Thickness characterization of atomically-thin WSe$_2$ on epitaxial graphene by low-energy electron reflectivity oscillations
Authors:
Sergio C. de la Barrera,
Yu-Chuan Lin,
Sarah M. Eichfeld,
Joshua A. Robinson,
Qin Gao,
Michael Widom,
Randall M. Feenstra
Abstract:
In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe$_2$ on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe$_2$--graphene heterostructures are studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe$_2$ states that are localized between the mon…
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In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe$_2$ on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe$_2$--graphene heterostructures are studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe$_2$ states that are localized between the monolayers of each vertical heterostructure are shown to reveal the number of layers for each point on the surface. A theory for the origin of these states is developed and utilized to explain the experimentally observed featured in the WSe$_2$ electron reflectivity.
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Submitted 13 June, 2016;
originally announced June 2016.
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Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces
Authors:
Devashish P. Gopalan,
Patrick C. Mende,
Sergio C. de la Barrera,
Shonali Dhingra,
Jun Li,
Kehao Zhang,
Nicholas A. Simonson,
Joshua A. Robinson,
Ning Lu,
Qingxiao Wang,
Moon J. Kim,
Brian D'Urso,
Randall M. Feenstra
Abstract:
Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphe…
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Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphene. Additionally, over nearly the entire surface, the properties of the layer that was originally graphene is observed to change in a manner that is consistent with the formation of a mixed h-BN/graphene alloy, i.e. h-BNC alloy. Furthermore, following the deposition of the borazine, a small fraction of the surface is found to consist of bare copper, indicating etching of the overlying graphene. The inability to form h-BN layers on top of graphene is discussed in terms of the catalytic behavior of the underlying copper surface and the decomposition of the borazine on top of the graphene.
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Submitted 10 February, 2016; v1 submitted 15 September, 2015;
originally announced September 2015.
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Topographic and electronic structure of cleaved SrTiO3(001) surfaces
Authors:
Wattaka Sitaputra,
Marek Skowronski,
Randall M. Feenstra
Abstract:
The topographic and electronic structure of cleaved SrTiO3(001) surfaces were studied, employing samples that either had or had not been coated with Ti on their outer surfaces prior to fracture. In both cases, SrO- and TiO2-terminated terraces were present on the cleavage surface, enabling in situ studies on either termination. However, the samples coated with Ti prior to fracture were found to yi…
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The topographic and electronic structure of cleaved SrTiO3(001) surfaces were studied, employing samples that either had or had not been coated with Ti on their outer surfaces prior to fracture. In both cases, SrO- and TiO2-terminated terraces were present on the cleavage surface, enabling in situ studies on either termination. However, the samples coated with Ti prior to fracture were found to yield a rougher morphology on TiO2-terminated terraces as well as a higher density of oxygen vacancies during an annealing (outgassing) step following the coating. The higher density of oxygen vacancies in the bulk of the Ti-coated samples also provides higher conductivity which, in turn, improves a sensitivity of the spectroscopy and reduces the effect of tip-induced band bending. Nonetheless, similar spectral features, unique to each termination, were observed for samples both with and without the Ti coating. Notably, with moderate-temperature annealing following fracture, a strong discrete peak in the conductance spectra, arising from oxygen vacancies, was observed on the SrO-terminated terraces. This peak appears at slightly different voltages for coated and uncoated samples, signifying a possible effect of tip-induced band bending.
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Submitted 15 September, 2015;
originally announced September 2015.
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Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
Authors:
Sergio C. de la Barrera,
Randall M. Feenstra
Abstract:
A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in th…
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A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in the current-voltage characteristics are explained in terms of the electrostatically-induced band gap, gate voltage modulation, density of states near the band edge, and resonances with the upper sub-band. These observations are compared to ones from similar heterostructures formed with monolayer graphene.
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Submitted 2 March, 2015; v1 submitted 19 January, 2015;
originally announced January 2015.
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Oxygen Vacancies on SrO-terminated SrTiO3(001) Surfaces studied by Scanning Tunneling Spectroscopy
Authors:
Wattaka Sitaputra,
Nikhil Sivadas,
Marek Skowronski,
Di Xiao,
Randall M. Feenstra
Abstract:
The electronic structure of SrTiO3(001) surfaces was studied using scanning tunneling spectroscopy and density-functional theory. With high dynamic range measurements, an in-gap transition level was observed on SrO-terminated surfaces, at 2.7 eV above the valence band maximum. The density of centers responsible for this level was found to increase with surface segregation of oxygen vacancies and d…
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The electronic structure of SrTiO3(001) surfaces was studied using scanning tunneling spectroscopy and density-functional theory. With high dynamic range measurements, an in-gap transition level was observed on SrO-terminated surfaces, at 2.7 eV above the valence band maximum. The density of centers responsible for this level was found to increase with surface segregation of oxygen vacancies and decrease with exposure to molecular oxygen. Based on these finding, the level is attributed to surface O vacancies. A level at a similar energy is predicted theoretically on SrO-terminated surfaces. For TiO2-terminated surfaces, no discrete in-gap state was observed, although one is predicted theoretically. This lack of signal is believed to be due to the nature of defect wavefunction involved, as well as the possible influence of transport limitations in the tunneling spectroscopy measurements.
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Submitted 14 January, 2015;
originally announced January 2015.
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Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer $SL-WSe_2$
Authors:
Chendong Zhang,
Yuxuan Chen,
Amber Johnson,
Ming-Yang Li,
Lain-Jong Li,
Patrick C. Mende,
Randall M. Feenstra,
Chih-Kang Shih
Abstract:
Understanding quasiparticle band structures of transition metal dichalcogenides (TMDs) is critical for technological advances of these materials for atomic layer electronics and photonics. Although theoretical calculations to date have shown qualitatively similar features, there exist subtle differences which can lead to important consequences in the device characteristics. For example, most calcu…
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Understanding quasiparticle band structures of transition metal dichalcogenides (TMDs) is critical for technological advances of these materials for atomic layer electronics and photonics. Although theoretical calculations to date have shown qualitatively similar features, there exist subtle differences which can lead to important consequences in the device characteristics. For example, most calculations have shown that all single layer (SL) TMDs have direct band gaps, while some have shown that $SL-WSe_2$ have an indirect gap. Moreover, there are large variations in the reported quasiparticle gaps, corresponding to large variations in exciton binding energies. By using a comprehensive form of scanning tunneling spectroscopy, we have revealed detailed quasiparticle electronic structures in TMDs, including the quasi-particle gaps, critical point energy locations and their origins in the Brillouin Zones (BZs). We show that $SL-WSe_2$ actually has an indirect quasi-particle gap with the conduction band minimum located at the Q point (instead of K), albeit the two states are nearly degenerate. Its implications on optical properties are discussed. We have further observed rich quasi-particle electronic structures of TMDs as a function of atomic structures and spin-orbital couplings.
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Submitted 15 May, 2015; v1 submitted 29 December, 2014;
originally announced December 2014.
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Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene
Authors:
Suresh Vishwanath,
Xinyu Liu,
Sergei Rouvimov,
Patrick C. Mende,
Angelica Azcatl,
Stephen McDonnell,
Robert M. Wallace,
Randall M. Feenstra,
Jacek K. Furdyna,
Debdeep Jena,
Huili Grace Xing
Abstract:
We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2 grows by van-der-Waals epitaxy on all 3 substrates with a preferred crystallographic orientation and a Mo:Se ratio of 1:2. Photoluminescence at room temperature (~1…
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We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2 grows by van-der-Waals epitaxy on all 3 substrates with a preferred crystallographic orientation and a Mo:Se ratio of 1:2. Photoluminescence at room temperature (~1.56 eV) is observed in monolayer MoSe2 on both CaF2 and epitaxial graphene. The band edge absorption is very sharp, <60 meV over 3 decades. Overcoming the observed small grains by promoting mobility of Mo atoms would make MBE a powerful technique to achieve high quality 2D materials and heterostructures.
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Submitted 18 December, 2014;
originally announced December 2014.
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Inelastic Effects in Low-Energy Electron Reflectivity of Two-dimensional Materials
Authors:
Qin Gao,
P. C. Mende,
M. Widom,
R. M. Feenstra
Abstract:
A simple method is proposed for inclusion of inelastic effects (electron absorption) in computations of low-energy electron reflectivity (LEER) spectra. The theoretical spectra are formulated by matching of electron wavefunctions obtained from first-principles computations in a repeated vacuum-slab-vacuum geometry. Inelastic effects are included by allowing these states to decay in time in accorda…
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A simple method is proposed for inclusion of inelastic effects (electron absorption) in computations of low-energy electron reflectivity (LEER) spectra. The theoretical spectra are formulated by matching of electron wavefunctions obtained from first-principles computations in a repeated vacuum-slab-vacuum geometry. Inelastic effects are included by allowing these states to decay in time in accordance with an imaginary term in the potential of the slab, and by mixing of the slab states in accordance with the same type of distribution as occurs in a free-electron model. LEER spectra are computed for various two-dimensional materials, including free-standing multilayer graphene, graphene on copper substrates, and hexagonal boron nitride (h-BN) on cobalt substrates.
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Submitted 24 November, 2014;
originally announced November 2014.
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Theory of Graphene-Insulator-Graphene Tunnel Junctions
Authors:
S. C. de la Barrera,
Qin Gao,
R. M. Feenstra
Abstract:
Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction form potentially useful transistor structures. Two prior theoretical treatments of such devices are discussed; the treatments are shown to be formally equivale…
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Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction form potentially useful transistor structures. Two prior theoretical treatments of such devices are discussed; the treatments are shown to be formally equivalent, although some differences in their implementations are identified. The limit of zero momentum conservation in the theory is explicitly considered, with a formula involving the density-of-states of the graphene electrodes recovered in this limit. Various predictions of the theory are compared to experiment.
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Submitted 11 April, 2014; v1 submitted 8 April, 2014;
originally announced April 2014.
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Formation of a Buffer Layer for Graphene on C-face SiC{0001}
Authors:
Guowei He,
N. Srivastava,
R. M. Feenstra
Abstract:
Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in a Si-rich environment are studied using low-energy electron diffraction (LEED) and low-energy electron microscopy (LEEM). Upon graphitization, an interface with rt(43) x rt(43)-R7.6 degree symmetry is observed by in situ LEED. After oxidation, the interface displays rt(3) x rt(3)-R30 degree symmetry. E…
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Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in a Si-rich environment are studied using low-energy electron diffraction (LEED) and low-energy electron microscopy (LEEM). Upon graphitization, an interface with rt(43) x rt(43)-R7.6 degree symmetry is observed by in situ LEED. After oxidation, the interface displays rt(3) x rt(3)-R30 degree symmetry. Electron reflectivity measurements indicate that these interface structures arise from a graphene-like "buffer layer" that forms between the graphene and the SiC, similar to that observed on Si-face SiC. From a dynamical LEED structure calculation for the oxidized C-face surface, it is found to consist of a graphene layer sitting on top of a silicate (Si2O3) layer, with the silicate layer having the well-known structure as previously studied on bare SiC(000-1) surfaces. Based on this result, the structure of the interface prior to oxidation is discussed.
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Submitted 18 January, 2014;
originally announced January 2014.
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Friedel Oscillation-Induced Energy Gap Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries
Authors:
Kendal W. Clark,
X. -G. Zhang,
Gong Gu,
Jewook Park,
Guowei He,
R. M. Feenstra,
An-** Li
Abstract:
We show that Friedel charge oscillation near an interface opens a gap at the Fermi energy for electrons with wave vectors perpendicular to the interface. If the Friedel gaps on two sides of the interface are different, a nonequlibrium effect - shifting of these gaps under bias - leads to asymmetric transport upon reversing the bias polarity. The predicted transport asymmetry is revealed by scannin…
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We show that Friedel charge oscillation near an interface opens a gap at the Fermi energy for electrons with wave vectors perpendicular to the interface. If the Friedel gaps on two sides of the interface are different, a nonequlibrium effect - shifting of these gaps under bias - leads to asymmetric transport upon reversing the bias polarity. The predicted transport asymmetry is revealed by scanning tunneling potentiometry at monolayer-bilayer interfaces in epitaxial graphene on SiC (0001). This intriguing interfacial transport behavior opens a new avenue towards novel quantum functions such as quantum switching.
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Submitted 8 January, 2014;
originally announced January 2014.
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Low-Energy Electron Reflectivity of Graphene on Copper and other Substrates
Authors:
N. Srivastava,
Qin Gao,
M. Widom,
R. M. Feenstra,
Shu Nie,
K. F. McCarty,
I. V. Vlassiouk
Abstract:
The reflectivity of low energy electrons from graphene on copper substrates is studied both experimentally and theoretically. Well-known oscillations in the reflectivity of electrons with energies 0 - 8 eV above the vacuum level are observed in the experiment. These oscillations are reproduced in theory, based on a first-principles density functional description of interlayer states forming for va…
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The reflectivity of low energy electrons from graphene on copper substrates is studied both experimentally and theoretically. Well-known oscillations in the reflectivity of electrons with energies 0 - 8 eV above the vacuum level are observed in the experiment. These oscillations are reproduced in theory, based on a first-principles density functional description of interlayer states forming for various thicknesses of multilayer graphene. It is demonstrated that n layers of graphene produce a regular series of n-1 minima in the reflectance spectra, together with a possible additional minimum associated with an interlayer state forming between the graphene and the substrate. Both (111) and (001) orientations of the copper substrates are studied. Similarities in their reflectivity spectra arise from the interlayer states, whereas differences are found because of the different Cu band structures along those orientations. Results for graphene on other substrates, including Pt(111) and Ir(111), are also discussed.
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Submitted 7 June, 2013; v1 submitted 12 March, 2013;
originally announced March 2013.
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SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor
Authors:
Pei Zhao,
Randall M. Feenstra,
Gong Gu,
Debdeep Jena
Abstract:
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer. A large current peak occurs when the Dirac points are aligned at a particular drain-to- source bias VDS . Our model shows…
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In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer. A large current peak occurs when the Dirac points are aligned at a particular drain-to- source bias VDS . Our model shows that the current of the SymFET is very weakly dependent on temperature. The resonant current peak is controlled by chemical do** and applied gate bias. The on/off ratio increases with graphene coherence length and do**. The symmetric resonant peak is a good candidate for high-speed analog applications, and can enable digital logic similar to the BiSFET. Our analytical model also offers the benefit of permitting simple analysis of features such as the full-width-at-half-maximum (FWHM) of the resonant peak and higher order harmonics of the nonlinear current. The SymFET takes advantage of the perfect symmetry of the bandstructure of 2D graphene, a feature that is not present in conventional semiconductors.
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Submitted 4 January, 2013;
originally announced January 2013.
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Low-energy Electron Reflectivity from Graphene: First-Principles Computations and Approximate Models
Authors:
R. M. Feenstra,
M. Widom
Abstract:
A computational method is developed whereby the reflectivity of low-energy electrons from a surface can be obtained from a first-principles solution of the electronic structure of the system. The method is applied to multilayer graphene. Two bands of reflectivity minima are found, one at 0 - 8 eV and the other at 14 - 22 eV above the vacuum level. For a free-standing slab with n layers of graphene…
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A computational method is developed whereby the reflectivity of low-energy electrons from a surface can be obtained from a first-principles solution of the electronic structure of the system. The method is applied to multilayer graphene. Two bands of reflectivity minima are found, one at 0 - 8 eV and the other at 14 - 22 eV above the vacuum level. For a free-standing slab with n layers of graphene, each band contains n-1 zeroes in the reflectivity. Two additional image-potential type states form at the ends of the graphene slab, with energies just below the vacuum level, hence producing a total of 2n states. A tight-binding model is developed, with basis functions localized in the spaces between the graphene planes (and at the ends of the slab). The spectrum of states produced by the tight-binding model is found to be in good agreement with the zeros of reflectivity (i.e. transmission resonances) of the first-principles results.
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Submitted 21 December, 2012;
originally announced December 2012.
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Low-energy Electron Reflectivity from Graphene
Authors:
R. M. Feenstra,
N. Srivastava,
Qin Gao,
M. Widom,
Bogdan Diaconescu,
Taisuke Ohta,
G. L. Kellogg,
J. T. Robinson,
I. V. Vlassiouk
Abstract:
Low-energy reflectivity of electrons from single- and multi-layer graphene is examined both theoretically and experimentally. A series of minima in the reflectivity over the energy range of 0 - 8 eV are found, with the number of minima depending on the number of graphene layers. Using first-principles computations, it is demonstrated that a free standing n-layer graphene slab produces n-1 reflecti…
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Low-energy reflectivity of electrons from single- and multi-layer graphene is examined both theoretically and experimentally. A series of minima in the reflectivity over the energy range of 0 - 8 eV are found, with the number of minima depending on the number of graphene layers. Using first-principles computations, it is demonstrated that a free standing n-layer graphene slab produces n-1 reflectivity minima. This same result is also found experimentally for graphene supported on SiO2. For graphene bonded onto other substrates it is argued that a similar series of reflectivity minima is expected, although in certain cases an additional minimum occurs, at an energy that depends on the graphene-substrate separation and the effective potential in that space.
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Submitted 31 January, 2013; v1 submitted 28 November, 2012;
originally announced November 2012.
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Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments
Authors:
Guowei He,
N. Srivastava,
R. M. Feenstra
Abstract:
The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different than for graphene formation in vacuum. A complex low-energy electron diffraction pattern with rt(43) x rt(43)-R\pm7.6° symmetry is found to form at the interfac…
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The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different than for graphene formation in vacuum. A complex low-energy electron diffraction pattern with rt(43) x rt(43)-R\pm7.6° symmetry is found to form at the interface. An interface layer consisting essentially of graphene is observed, and it is argued that the manner in which this layer covalently bonds to the underlying SiC produces the rt(43) x rt(43)-R\pm7.6° structure [i.e. analogous to the 6rt(3) x 6rt(3)-R30° "buffer layer" that forms on the SiC(0001) surface (the Si-face)]. Oxidation of the surface is found to modify (eliminate) the rt(43) x rt(43)-R\pm7.6° structure, which is interpreted in the same manner as the known "decoupling" that occurs for the Si-face buffer layer.
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Submitted 3 May, 2012;
originally announced May 2012.
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Interface Structure of Graphene on SiC(000-1)
Authors:
N. Srivastava,
Guowei He,
Luxmi,
R. M. Feenstra
Abstract:
Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former yields a well known 3x3 reconstructed interface, whereas the latter produces an interface with rt(43)xrt(43)-R\pm7.6 degrees symmetry. This structure is shown to con…
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Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former yields a well known 3x3 reconstructed interface, whereas the latter produces an interface with rt(43)xrt(43)-R\pm7.6 degrees symmetry. This structure is shown to contain a graphene-like layer with properties similar to the 6rt(3)x6rt(3)-R30 degrees "buffer layer" that forms on the Si(0001) surface (the Si-face).
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Submitted 30 December, 2011; v1 submitted 29 October, 2011;
originally announced October 2011.
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Graphene formed on SiC under various environments: Comparison of Si-face and C-face
Authors:
N. Srivastava,
Guowei He,
Luxmi,
P. C. Mende,
R. M. Feenstra,
Yugang Sun
Abstract:
The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atomic force microscopy, low-energy electron microscopy, and Raman spectroscopy. The graphene is formed by heating the surface to 1100 - 1600 C, which causes preferential sublimation of the Si atoms. The argon atmosphere or…
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The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atomic force microscopy, low-energy electron microscopy, and Raman spectroscopy. The graphene is formed by heating the surface to 1100 - 1600 C, which causes preferential sublimation of the Si atoms. The argon atmosphere or the background of disilane decreases the sublimation rate so that a higher graphitization temperature is required, thus improving the morphology of the films. For the (0001) surface, large areas of monolayer-thick graphene are formed in this way, with the size of these areas depending on the miscut of the sample. Results on the (000-1) surface are more complex. This surface graphitizes at a lower temperature than for the (0001) surface and consequently the growth is more three-dimensional. In an atmosphere of argon the morphology becomes even worse, with the surface displaying markedly inhomogeneous nucleation, an effect attributed to unintentional oxidation of the surface during graphitization. Use of a disilane environment for the (000-1) surface is found to produce improved morphology, with relatively large areas of monolayer-thick graphene.
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Submitted 5 January, 2012; v1 submitted 6 September, 2011;
originally announced September 2011.
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Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions
Authors:
R. M. Feenstra,
Debdeep Jena,
Gong Gu
Abstract:
The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak is produced. The magnitude and width of…
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The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak is produced. The magnitude and width of this peak is computed, and its use for devices is discussed. The influence of both rotational alignment of the graphene electrodes and structural perfection of the graphene is discussed.
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Submitted 25 October, 2011; v1 submitted 24 August, 2011;
originally announced August 2011.
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Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces
Authors:
Luxmi,
N. Srivastava,
Guowei He,
R. M. Feenstra
Abstract:
The morphology of graphene formed on the (000-1) surface (the C-face) and the (0001) surface (the Si-face) of SiC, by annealing in ultra-high vacuum or in an argon environment, is studied by atomic force microscopy and low-energy electron microscopy. The graphene forms due to preferential sublimation of Si from the surface. In vacuum, this sublimation occurs much more rapidly for the C-face than t…
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The morphology of graphene formed on the (000-1) surface (the C-face) and the (0001) surface (the Si-face) of SiC, by annealing in ultra-high vacuum or in an argon environment, is studied by atomic force microscopy and low-energy electron microscopy. The graphene forms due to preferential sublimation of Si from the surface. In vacuum, this sublimation occurs much more rapidly for the C-face than the Si-face, so that 150 C lower annealing temperatures are required for the C-face to obtain films of comparable thickness. The evolution of the morphology as a function of graphene thickness is examined, revealing significant differences between the C-face and the Si-face. For annealing near 1320 C, graphene films of about 2 monolayers (ML) thickness are formed on the Si-face, but 16 ML is found for the C-face. In both cases, step bunches are formed on the surface. For the Si-face, layer-by-layer growth of the graphene is observed in areas between the step bunches. At 1170 C, for the C-face, a more 3-dimensional type of growth is found. The average thickness is then about 4 ML, but with a wide variation in local thickness (2 - 7 ML) over the surface. The spatial arrangement of constant-thickness domains are found to be correlated with step bunches on the surface, which form in a more restricted manner than at 1320 C. It is argued that these domains are somewhat disconnected, so that no strong driving force for planarization of the film exists. In a 1-atm argon environment, permitting higher growth temperatures, the graphene morphology for the Si-face is found to become more layer-by-layer-like even for graphene thickness as low as 1 ML. However, for the C-face the morphology becomes much worse, with the surface displaying markedly inhomogeneous nucleation of the graphene. It is demonstrated that these surfaces are unintentionally oxidized, which accounts for the inhomogeneous growth.
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Submitted 22 November, 2010; v1 submitted 10 November, 2010;
originally announced November 2010.
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Formation of Epitaxial Graphene on SiC(0001) using Vacuum or Argon Environments
Authors:
Luxmi,
N. Srivastava,
R. M. Feenstra,
P. J. Fisher
Abstract:
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectroscopy. The graphene forms due to preferential sublimation of Si from the surface at high temperature, and the formation has been studied in both high-vacuum and 1-atm-argon environments. In vacuum, a few monolayers of g…
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The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectroscopy. The graphene forms due to preferential sublimation of Si from the surface at high temperature, and the formation has been studied in both high-vacuum and 1-atm-argon environments. In vacuum, a few monolayers of graphene forms at temperatures around 1400 C, whereas in argon a temperature of about 1600 C is required in order to obtain a single graphene monolayer. In both cases considerable step motion on the surface is observed, with the resulting formation of step bunches separated laterally by >10 microns. Between the step bunches, layer-by-layer growth of the graphene is found. The presence of a disordered, secondary graphitic phase on the surface of the graphene is also identified.
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Submitted 24 November, 2010; v1 submitted 30 March, 2010;
originally announced March 2010.
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Thickness monitoring of graphene on SiC using low-energy electron diffraction
Authors:
P. J. Fisher,
Luxmi,
N. Srivastava,
S. Nie,
R. M. Feenstra
Abstract:
The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot intensities for graphene compared to SiC is measured for a series of samples of known graphene thickness (determined using low-energy electron microscopy). It…
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The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot intensities for graphene compared to SiC is measured for a series of samples of known graphene thickness (determined using low-energy electron microscopy). It is found that this ratio is effective for determining graphene thicknesses in the range 1 to 3 monolayers. Effects of a distribution of graphene thicknesses on this method of thickness determination are considered.
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Submitted 4 February, 2010;
originally announced February 2010.
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Morphology of Graphene on SiC(000-1) Surfaces
Authors:
Luxmi,
P. J. Fisher,
N. Srivastava,
R. M. Feenstra,
Yugang Sun,
J. Kedzierski,
P. Healey,
Gong Gu
Abstract:
Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger electron spectroscopy, scanning Auger microscopy and Raman spectroscopy. Morphology of these films is compared with the graphene films grown on SiC(0001) surfaces (the Si-face). Graphene forms a terraced morphology on the…
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Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger electron spectroscopy, scanning Auger microscopy and Raman spectroscopy. Morphology of these films is compared with the graphene films grown on SiC(0001) surfaces (the Si-face). Graphene forms a terraced morphology on the C-face, whereas it forms with a flatter morphology on the Si-face. It is argued that this difference occurs because of differing interface structures in the two cases. For certain SiC wafers, nanocrystalline graphite is found to form on top of the graphene.
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Submitted 13 August, 2009; v1 submitted 29 July, 2009;
originally announced July 2009.
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Tunneling Spectroscopy of Graphene and related Reconstructions on SiC(0001)
Authors:
Shu Nie,
R. M. Feenstra
Abstract:
The 5x5, 6rt(3)x6rt(3)-R30deg, and graphene-covered 6rt(3)x6rt(3)-R30deg reconstructions of the SiC(0001) surface are studied by scanning tunneling microscopy and spectroscopy. For the 5x5 structure a rich spectrum of surface states is obtained, with one state in particular found to be localized on top of structural protrusions (adatoms) observed on the surface. Similar spectra are observed on t…
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The 5x5, 6rt(3)x6rt(3)-R30deg, and graphene-covered 6rt(3)x6rt(3)-R30deg reconstructions of the SiC(0001) surface are studied by scanning tunneling microscopy and spectroscopy. For the 5x5 structure a rich spectrum of surface states is obtained, with one state in particular found to be localized on top of structural protrusions (adatoms) observed on the surface. Similar spectra are observed on the bare 6rt(3)x6rt(3)-R30deg reconstruction, and in both cases the spectra display nearly zero conductivity at the Fermi-level. When graphene covers the 6rt(3)x6rt(3)-R30deg surface the conductivity at the Fermi-level shows a marked increase, and additionally the various surface state peaks seen in the spectrum shift in energy and fall in intensity. The influence of the overlying graphene on the electronic properties of the interface is discussed, as are possible models for the interface structure.
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Submitted 9 January, 2009;
originally announced January 2009.
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On narrowing coated conductor film: emergence of granularity-induced field hysteresis of transport critical current
Authors:
A. A. Gapud,
D. K. Christen,
R. Feenstra,
F. A. List III,
A. Khan
Abstract:
Critical current density Jc in polycrystalline or granular superconducting material is known to be hysteretic with applied field H due to the focusing of field within the boundary between adjacent grains. This is of concern in the so-called coated conductors wherein superconducting film is grown on a granular, but textured surface of a metal substrate. While previous work has mainly been on Jc d…
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Critical current density Jc in polycrystalline or granular superconducting material is known to be hysteretic with applied field H due to the focusing of field within the boundary between adjacent grains. This is of concern in the so-called coated conductors wherein superconducting film is grown on a granular, but textured surface of a metal substrate. While previous work has mainly been on Jc determined using induced or magnetization currents, the present work utilizes transport current via an applied potential in strip geometry. It is observed that the effect is not as pronounced using transport current, probably due to a large difference in criterion voltage between the two types of measurements. However, when the films are narrowed by patterning into 200-, 100-, or 80-micron, the hysteresis is clearly seen, because of the forcing of percolation across higher-angle grain boundaries. This effect is compared for films grown on ion-beam-assisted-deposited (IBAD) YSZ substrate and those grown on rolling-assisted-biaxially-textures substrates (RABiTS) which have grains that are about ten times larger. The hysteresis is more pronounced for the latter, which is more likely to have a weak grain boundary spanning the width of the microbridge. This is also of concern to applications in which coated conductors will be striated in order to reduce of AC losses.
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Submitted 9 January, 2008; v1 submitted 7 January, 2008;
originally announced January 2008.
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Through-thickness superconducting and normal-state transport properties revealed by thinning of thick film ex situ YBa2Cu3O7-x coated conductors
Authors:
D. M. Feldmann,
D. C. Larbalestier,
R. Feenstra,
A. A. Gapud,
J. D. Budai,
T. G. Holesinger,
P. N. Arendt
Abstract:
A rapid decrease in the critical current density (Jc) of YBa2Cu3O7-x (YBCO) films with increasing film thickness has been observed for multiple YBCO growth processes. While such behavior is predicted from 2D collective pinning models under certain assumptions, empirical observations of the thickness dependence of Jc are believed to be largely processing dependent at present. To investigate this…
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A rapid decrease in the critical current density (Jc) of YBa2Cu3O7-x (YBCO) films with increasing film thickness has been observed for multiple YBCO growth processes. While such behavior is predicted from 2D collective pinning models under certain assumptions, empirical observations of the thickness dependence of Jc are believed to be largely processing dependent at present. To investigate this behavior in ex situ YBCO films, 2.0 and 2.9 um thick YBCO films on ion beam assisted deposition (IBAD) - yttria stabilized zirconia (YSZ) substrates were thinned and repeatedly measured for rho(T) and Jc(H). The 2.9 um film exhibited a constant Jc(77K,SF) through thickness of ~1 MA/cm2 while the 2.0 um film exhibited an increase in Jc(77K,SF) as it was thinned. Neither film offered evidence of significant dead layers, suggesting that further increases in critical current can be obtained by growing thicker YBCO layers.
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Submitted 6 October, 2003;
originally announced October 2003.
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Self-organized current transport through low angle grain boundaries in YBa$_2$Cu$_3$O$_{7-δ}$ thin films, studied magnetometrically
Authors:
J. R. Thompson,
H. J. Kim,
C. Cantoni,
D. K. Christen,
R. Feenstra,
D. T. Verebelyi
Abstract:
The critical current density flowing across low angle grain boundaries in YBa$_2$Cu$_3$O$_{7-δ}$ thin films has been studied magnetometrically. Films (200 nm thickness) were deposited on SrTiO$_3$ bicrystal substrates containing a single [001] tilt boundary, with angles of 2, 3, 5, and 7 degrees, and the films were patterned into rings. Their magnetic moments were measured in applied magnetic fi…
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The critical current density flowing across low angle grain boundaries in YBa$_2$Cu$_3$O$_{7-δ}$ thin films has been studied magnetometrically. Films (200 nm thickness) were deposited on SrTiO$_3$ bicrystal substrates containing a single [001] tilt boundary, with angles of 2, 3, 5, and 7 degrees, and the films were patterned into rings. Their magnetic moments were measured in applied magnetic fields up to 30 kOe at temperatures of 5 - 95 K; current densities of rings with or without grain boundaries were obtained from a modified critical state model. For rings containing 5 and 7 degree boundaries, the magnetic response depends strongly on the field history, which arises in large part from self-field effects acting on the grain boundary.
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Submitted 16 August, 2003;
originally announced August 2003.
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RHEED Studies of Epitaxial Oxide Seed-Layer Growth on RABiTS Ni(001): The Role of Surface Structure and Chemistry
Authors:
C. Cantoni,
D. K. Christen,
R. Feenstra,
A. Goyal,
G. W. Ownby,
D. M. Zehner,
D. P. Norton
Abstract:
The epitaxial deposition of the first oxide buffer layer (seed layer) on biaxially textured Ni tape for coated conductors is a critical step that is dependent on the atomistic surface condition of the metal. We present a study of the {100}<100> biaxially textured Ni (001) surface and seed-layer growth using in situ reflection high-energy electron diffraction (RHEED) and Auger electron spectrosco…
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The epitaxial deposition of the first oxide buffer layer (seed layer) on biaxially textured Ni tape for coated conductors is a critical step that is dependent on the atomistic surface condition of the metal. We present a study of the {100}<100> biaxially textured Ni (001) surface and seed-layer growth using in situ reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). Our observations are consistent with formation of a c(2 x 2) 2-D superstructure due to surface segregation of sulfur contained in the metal. We show that this superstructure can have a dramatic effect on the heteroepitaxial growth of oxide seed layers. In particular, the surface superstructure promotes the (200) epitaxial oxide growth of Y2O3-stabilized ZrO2 (YSZ), which is necessary for the development of high-Jc superconducting films for coated conductors.
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Submitted 13 June, 2001;
originally announced June 2001.
