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Silicon-Oxide Interfaces: Structure and Electronic Properties
Authors:
Y. G. Fedorenko
Abstract:
The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trap** in the oxide are considered. An overview of archetypical structural defects of the Si/SiO2 interface is given.
The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trap** in the oxide are considered. An overview of archetypical structural defects of the Si/SiO2 interface is given.
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Submitted 6 September, 2017;
originally announced September 2017.
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Ion-Beam-Induced Defects in CMOS Technology: Methods of Study
Authors:
Y. G. Fedorenko
Abstract:
Ion implantation is a non-equilibrium do** technique which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of do** impurities can be considered as distinct advantages of ion im…
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Ion implantation is a non-equilibrium do** technique which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of do** impurities can be considered as distinct advantages of ion implantation. Owing to excellent controllability, uniformity, and the dose insensitive relative accuracy ion implantation has grown to be the principal do** technology used in the manufacturing of integrated circuits. Originally developed from particle accelerator technology ion implanters operate in the energy range from tens eV to several MeV (corresponding to a few nm to several microns in depth). The main feature of ion implantation is the formation of point defects in the energetic ion collisions. Very minute concentrations of defects and impurities in semiconductors drastically alter their electrical and optical properties. This chapter presents methods of defect spectroscopy to study the defect origin and characterize the defect density of states in thin film and semiconductor interfaces. The methods considered are positron annihilation spectroscopy, electron spin resonance, and approaches for electrical characterization of semiconductor devices.
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Submitted 4 April, 2017; v1 submitted 24 January, 2017;
originally announced January 2017.
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Electronic Properties of CdS/CdTe Solar Cells as Influenced by a Buffer Layer
Authors:
Y. G. Fedorenko,
J. D. Major,
A. Pressman,
L. Phillips,
K. Durose
Abstract:
We considered modification of the defect density of states in CdTe as influenced by a buffer layer in ZnO(ZnS, SnSe)/CdS/CdTe solar cells. Compared to the solar cells employing ZnO buffer layers, implementation of ZnSe and ZnS resulted in the lower net ionized acceptor concentration and the energy shift of the dominant deep trap levels to the midgap of CdTe. The results clearly indicated that the…
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We considered modification of the defect density of states in CdTe as influenced by a buffer layer in ZnO(ZnS, SnSe)/CdS/CdTe solar cells. Compared to the solar cells employing ZnO buffer layers, implementation of ZnSe and ZnS resulted in the lower net ionized acceptor concentration and the energy shift of the dominant deep trap levels to the midgap of CdTe. The results clearly indicated that the same defect was responsible for the inefficient do** and the formation of recombination centers in CdTe. This observation can be explained taking into account the effect of strain on the electronic properties of the grain boundary interface states in polycrystalline CdTe. In the conditions of strain, interaction of chlorine with the grain boundary point defects can be altered.
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Submitted 14 January, 2016; v1 submitted 26 November, 2015;
originally announced November 2015.
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Modification of electron states in CdTe absorber due to a buffer layer in CdS/CdTe solar cells
Authors:
Y. G. Fedorenko,
J. D. Major,
A. Pressman,
L. J. Phillips,
K. Durose
Abstract:
By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by…
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By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe
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Submitted 28 October, 2015; v1 submitted 9 June, 2015;
originally announced June 2015.
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Electrical properties of Bi-implanted amorphous chalcogenide films
Authors:
Yanina G. Fedorenko
Abstract:
The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge-Sb-Te, and Ga- La-S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogenide films at doses up to 1x1015 cm-2 is seen not to change the majority carrier type and activation energy for the conduction process. Higher implanta…
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The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge-Sb-Te, and Ga- La-S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogenide films at doses up to 1x1015 cm-2 is seen not to change the majority carrier type and activation energy for the conduction process. Higher implantation doses may reverse the majority carrier type in the studied films. Electron conductivity was observed in GeTe films implanted with Bi at a dose of 2x1016 cm-2. These studies indicate that native coordination defects present in amorphous chalcogenide semiconductors can be deactivated by means of ion implantation. A substantial density of implantation-induced traps in the studied films and their interfaces with silicon is inferred from analysis of the space-charge limited current and capacitance-voltage characteristics taken on Au/amorphous chalcogenide/Si structures.
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Submitted 28 May, 2015; v1 submitted 4 May, 2015;
originally announced May 2015.
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Electrical properties of Bi-implanted amorphous chalcogenide films
Authors:
Yanina G. Fedorenko,
Mark A. Hughes,
Julien L. Colaux,
C. Jeynes,
Russell M. Gwilliam,
Kevin Homewood,
B. Gholipour,
J. Yao,
Daniel W. Hewak,
Tae-Hoon Lee,
Stephen R. Elliott,
Richard J. Curry
Abstract:
The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films…
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The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.
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Submitted 9 December, 2014; v1 submitted 21 October, 2014;
originally announced October 2014.
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Impact of nitrogen incorporation on interface states in (100)Si/HfO2
Authors:
Y. G. Fedorenko,
L. Truong,
V. V. Afanas'ev,
A. Stesmans,
Z. Zhang,
S. A. Campbell
Abstract:
The influence of nitrogen incorporation on the energy distribution of interface states in the (100)Si/HfO2 system and their passivation by hydrogen have been studied. The results are compared to those of nominally N-free samples. The nitrogen in the (100)Si/HfO2 entity is found to increase the trap density, most significantly, in the upper part of Si band gap, in which energy range nitrogen incorp…
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The influence of nitrogen incorporation on the energy distribution of interface states in the (100)Si/HfO2 system and their passivation by hydrogen have been studied. The results are compared to those of nominally N-free samples. The nitrogen in the (100)Si/HfO2 entity is found to increase the trap density, most significantly, in the upper part of Si band gap, in which energy range nitrogen incorporation prevents passivation of interface traps by hydrogen. At the same time, passivation of fast interface traps in the lower part of the band gap proceeds efficiently, provided the thickness of the nitrogen containing interlayer is kept within a few monolayers. The minimal interface trap density below the midgap achieved after passivation in H2 is dominated by the presence of slow N-related states, likely located in the insulator. As inferred from capacitance-voltage and ac conductance analysis, the lowest density of electrically active defects [(8-9)x10 10 eV-1cm-2 at 0.4-0.5 eV from the top of the Si valence band edge] is achieved both in the N-free and N-containing (100)Si/HfO2 structuresafter post-deposition anneal at 800C in (N2+5%O2) followed by passivation in molecular hydrogen at 400C for 30 min.
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Submitted 25 June, 2014;
originally announced June 2014.
