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Room temperature ballistic transport in InSb quantum well nanodevices
Authors:
A. M. Gilbertson,
A. Kormanyos,
P. D. Buckle,
M. Fearn,
T. Ashley,
C. J. Lambert,
S. A. Solin,
L. F. Cohen
Abstract:
We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in…
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We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10$^{6}$ A/cm$^{2}$. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.
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Submitted 21 November, 2011;
originally announced November 2011.
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Ballistic transport and boundary scattering in InSb/InxAl1-xSb mesoscopic devices
Authors:
A. M. Gilbertson,
M. Fearn,
A. Kormányos,
D. E. Read,
C. J. Lambert,
M. T. Emeny,
T. Ashley,
S. A. Solin,
L. F. Cohen
Abstract:
We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental…
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We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.
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Submitted 20 September, 2010;
originally announced September 2010.
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High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures
Authors:
A. M. Gilbertson,
W. R. Branford,
M. Fearn,
L. Buckle,
P. D. Buckle,
T. Ashley,
L. F. Cohen
Abstract:
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and 3.28x1015 m-2. Room temperature mobilities are reported in excess of 6 m2V-1s-1. It is found that the Landau level broadening decreases with carrier density and b…
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We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and 3.28x1015 m-2. Room temperature mobilities are reported in excess of 6 m2V-1s-1. It is found that the Landau level broadening decreases with carrier density and beating patterns are observed in the magnetoresistance with non-zero node amplitudes in samples with the narrowest broadening despite the presence of a large g-factor. The beating is attributed to Rashba splitting phenomenon and Rashba coupling parameters are extracted from the difference in spin populations for a range of samples and gate biases. The influence of Landau level broadening and spin-dependent scattering rates on the observation of beating in the Shubnikov-de Haas oscillations is investigated by simulations of the magnetoconductance. Data with non-zero beat node amplitudes are accompanied by asymmetric peaks in the Fourier transform, which are successfully reproduced by introducing a spin-dependent broadening in the simulations. It is found that the low-energy (majority) spin up state suffers more scattering than the high-energy (minority) spin down state and that the absence of beating patterns in the majority of (lower density) samples can be attributed to the same effect when the magnitude of the level broadening is large.
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Submitted 19 March, 2009;
originally announced March 2009.
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Zero-field spin-splitting and spin lifetime in n-InSb/In1-xAlxSb asymmetric quantum well heterostructures
Authors:
A. M. Gilbertson,
M. Fearn,
J. H. Jefferson,
B. N. Murdin,
P. D. Buckle,
L. F. Cohen
Abstract:
The spin-orbit (SO) coupling parameters for lowest conduction subband due to structural (SIA) and bulk (BIA) inversion asymmetry are calculated for a range of carrier densities in [001]-grown delta-doped n-type InSb/In1-xAlxSb asymmetric quantum wells using the established 8 band k.p formalism [PRB 59,8 R5312 (1999)]. We present calculations for conditions of zero bias at 10 K. It is shown that…
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The spin-orbit (SO) coupling parameters for lowest conduction subband due to structural (SIA) and bulk (BIA) inversion asymmetry are calculated for a range of carrier densities in [001]-grown delta-doped n-type InSb/In1-xAlxSb asymmetric quantum wells using the established 8 band k.p formalism [PRB 59,8 R5312 (1999)]. We present calculations for conditions of zero bias at 10 K. It is shown that both the SIA and BIA parameters scale approximately linearly with carrier density, and exhibit a marked dependence on well width when alloy composition is adjusted to allow maximum upper barrier height for a given well width. In contrast to other material systems the BIA contribution to spin splitting is found to be of significant and comparable value to the SIA mechanism in these structures. We calculate the spin lifetime for spins oriented along [11-0] based on D'yakonov-Perel mechanism using both the theory of Averkiev et al. [J. Phys.:Condens. Matter 14 (2002)] and also the rate of precession of spins about the effective magnetic field, taking into account all three SO couplings, showing good agreement.Spin lifeime for this direction is largest in the narrow wells over the range of moderate carrier densities considered, which is attributed to the reduced magnitude of the k-cubic BIA parameter in narrow wells. The inherently large BIA induced SO coupling in these systems is shown to have considerable effect on the spin lifetime, which exhibits significant reduction in the maximum spin lifetime compared to previous studies which consider systems with relatively weak BIA induced SO coupling. The relaxation rate of spins oriented in the [001] direction is dominated by the k-linear SIA and BIA coupling parameters and at least an order of magnitude greater than in the [11-0] direction.
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Submitted 5 February, 2008; v1 submitted 31 January, 2008;
originally announced January 2008.
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A Surface-Gated InSb Quantum Well Single Electron Transistor
Authors:
J. M. S. Orr,
P. D. Buckle,
M. Fearn,
C. J. Storey,
L. Buckle,
T. Ashley
Abstract:
Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb b…
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Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb blockade and quantised confinement models are considered to explain the observation of conductance oscillations in these structures. The charging energy is found to be comparable with the energy spectrum for single particle states.
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Submitted 30 April, 2007;
originally announced April 2007.
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Generation of EPR pairs and interconversion of static and flying electron spin qubits
Authors:
G. Giavaras,
J. H. Jefferson,
M. Fearn,
C. J. Lambert
Abstract:
We propose a method of generating fully entangled electron spin pairs using an open static quantum dot and a moving quantum dot, realized by the propagation of a surface acoustic wave (SAW) along a quasi-one-dimensional channel in a semiconductor heterostructure. In particular, we consider a static dot (SD) loaded with two interacting electrons in a singlet state and demonstrate a mechanism whic…
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We propose a method of generating fully entangled electron spin pairs using an open static quantum dot and a moving quantum dot, realized by the propagation of a surface acoustic wave (SAW) along a quasi-one-dimensional channel in a semiconductor heterostructure. In particular, we consider a static dot (SD) loaded with two interacting electrons in a singlet state and demonstrate a mechanism which enables the moving SAW-dot to capture and carry along one of the electrons, hence yielding a fully entangled static-flying pair. We also show how with the same mechanism we can load the SD with one or two electrons which are initially carried by a SAW-induced dot. The feasibility of realizing these ideas with existing semiconductor technology is demonstrated and extended to yield flying or static pairs that are fully entangled and arbitrary interconversion of static and flying electron spin qubits.
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Submitted 26 April, 2008; v1 submitted 23 February, 2007;
originally announced February 2007.
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Singlet-triplet filtering and entanglement in a quantum dot structure
Authors:
G. Giavaras,
J. H. Jefferson,
M. Fearn,
C. J. Lambert
Abstract:
We consider two interacting electrons in a semiconductor quantum dot structure which consists of a small dot within a larger dot, and demonstrate a singlet-triplet filtering mechanism which involves spin-dependent resonances and can generate entanglement. By studying the exact time evolution of singlet and triplet states we show how the degree of both filtering and spin entanglement can be tuned…
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We consider two interacting electrons in a semiconductor quantum dot structure which consists of a small dot within a larger dot, and demonstrate a singlet-triplet filtering mechanism which involves spin-dependent resonances and can generate entanglement. By studying the exact time evolution of singlet and triplet states we show how the degree of both filtering and spin entanglement can be tuned using a time-dependent gate voltage.
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Submitted 8 November, 2006;
originally announced November 2006.
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Two-electron quantum dots as scalable qubits
Authors:
J. H. Jefferson,
M. Fearn,
D. L. J. Tipton,
T. P. Spiller
Abstract:
We show that two electrons confined in a square semiconductor quantum dot have two isolated low-lying energy eigenstates, which have the potential to form the basis of scalable computing elements (qubits). Initialisation, one-qubit and two-qubit universal gates, and readout are performed using electrostatic gates and magnetic fields. Two-qubit transformations are performed via the Coulomb intera…
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We show that two electrons confined in a square semiconductor quantum dot have two isolated low-lying energy eigenstates, which have the potential to form the basis of scalable computing elements (qubits). Initialisation, one-qubit and two-qubit universal gates, and readout are performed using electrostatic gates and magnetic fields. Two-qubit transformations are performed via the Coulomb interaction between electrons on adjacent dots. Choice of initial states and subsequent asymmetric tuning of the tunnelling energy parameters on adjacent dots control the effect of this interaction.
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Submitted 4 September, 2002; v1 submitted 12 June, 2002;
originally announced June 2002.
