Showing 1–7 of 7 results for author: Fattouhi, M

Interlayer Dzyaloshinskii-Moriya interaction in synthetic ferrimagnets

Authors: Shen Li, Mouad Fattouhi, Tianxun Huang, Chen Lv, Mark C. H. de Jong, **zhi Li, Xiaoyang Lin, Felipe Garcia-Sanchez, Eduardo Martinez, Stéphane Mangin, Bert Koopmans, Weisheng Zhao, Reinoud Lavrijsen

Abstract: The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been… ▽ More The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been uncovered. Here, we exploit interlayer chiral exchange bias fields in SFi to address both the sign and magnitude of the IL-DMI. Depending on the degree of imbalance between the two magnetic moments of the SFi, the amount of asymmetry, addressed via loop shifts of the hysteresis loops under an in-plane field reveals a unidirectional and chiral nature of the IL-DMI. The devices are then tested with SOT switching experiments and the process is examined via both transient state and steady state detection. In addition to field-free SOT switching, we find that the combination of IL-DMI and SOT give rise to multi-resistance states, which provides a possible direction for the future design of neuromorphic computing devices based on SOT. This work is a step towards characterizing and understanding the IL-DMI for spintronic applications. △ Less

Submitted 19 March, 2024; originally announced March 2024.

Comments: no

MSC Class: no

Understanding voltage-controlled magnetic anisotropy effect for the manipulation of dipolar-dominated propagating spin waves

Authors: Adrien. A. D. Petrillo, Mouad Fattouhi, Adriano Di Pietro, Marta Alerany Solé, Luis Lopez Diaz, Gianfranco Durin, Bert Koopmans, Reinoud Lavrijsen

Abstract: Spin waves, known for their ability to propagate without the involvement of moving charges, hold immense promise for on-chip information transfer and processing, offering a path toward post-CMOS computing technologies. This study investigates the potential synergy between propagating Damon-Eshbach spin waves and voltage-controlled magnetization in the pursuit of environmentally sustainable computi… ▽ More Spin waves, known for their ability to propagate without the involvement of moving charges, hold immense promise for on-chip information transfer and processing, offering a path toward post-CMOS computing technologies. This study investigates the potential synergy between propagating Damon-Eshbach spin waves and voltage-controlled magnetization in the pursuit of environmentally sustainable computing solutions. Employing micromagnetic simulations, we assess the feasibility of utilizing spin waves in DE mode in conjunction with localized voltage-induced alterations in surface anisotropy to enable low-energy logic operations. Our findings underscore the critical importance of selecting an optimal excitation frequency and gate width, which significantly influence the efficiency of the phase shift induced in propagating spin waves. Notably, we demonstrate that a realistic phase shift of 2.5$\left[ π\ \text{mrad}\right]$ can be achieved at a Co(5nm)/MgO material system via the VCMA effect. Moreover, by tuning the excitation frequency, Co layer thickness, gate width, and the use of a GdO\textsubscript{x} dielectric, we illustrate the potential to enhance the phase shift by a factor of 200 when compared to MgO dielectrics. This research contributes valuable insights towards develo** next-generation computing technologies with reduced energy consumption. △ Less

Submitted 5 February, 2024; originally announced February 2024.

Generation of imprinted strain gradients for spintronics

Authors: Giovanni Masciocchi, Mouad Fattouhi, Elizaveta Spetzler, Maria-Andromachi Syskaki, Ronald Lehndorff, Eduardo Martinez, Jeffrey McCord, Luis Lopez-Diaz, Andreas Kehlberger, Mathias Kläui

Abstract: In this work, we propose and evaluate an inexpensive and CMOS-compatible method to locally apply strain on a Si/SiOx substrate. Due to high growth temperatures and different thermal expansion coefficients, a SiN passivation layer exerts a compressive stress when deposited on a commercial silicon wafer. Removing selected areas of the passivation layer alters the strain on the micrometer range, lead… ▽ More In this work, we propose and evaluate an inexpensive and CMOS-compatible method to locally apply strain on a Si/SiOx substrate. Due to high growth temperatures and different thermal expansion coefficients, a SiN passivation layer exerts a compressive stress when deposited on a commercial silicon wafer. Removing selected areas of the passivation layer alters the strain on the micrometer range, leading to changes in the local magnetic anisotropy of a magnetic material through magnetoelastic interactions. Using Kerr microscopy, we experimentally demonstrate how the magnetoelastic energy landscape, created by a pair of openings, in a magnetic nanowire enables the creation of pinning sites for in-plane vortex walls that propagate in a magnetic racetrack. We report substantial pinning fields up to 15 mT for device-relevant ferromagnetic materials with positive magnetostriction. We support our experimental results with finite element simulations for the induced strain, micromagnetic simulations and 1D model calculations using the realistic strain profile to identify the depinning mechanism. All the observations above are due to the magnetoelastic energy contribution in the system, which creates local energy minima for the domain wall at the desired location. By controlling domain walls with strain, we realize the prototype of a true power-on magnetic sensor that can measure discrete magnetic fields or Oersted currents. This utilizes a technology that does not require piezoelectric substrates or high-resolution lithography, thus enabling wafer-level production. △ Less

Submitted 10 May, 2023; v1 submitted 9 May, 2023; originally announced May 2023.

Revealing nanoscale disorder in W/CoFeB/MgO ultra-thin films using domain wall motion

Authors: Johannes Wilhelmus van der Jagt, Vincent Jeudy, André Thiaville, Mamour Sall, Nicolas Vernier, Liza Herrera Diez, Mohamed Belmeguenai, Yves Roussigné, Salim M. Chérif, Mouad Fattouhi, Luis Lopez-Diaz, Alessio Lamperti, Roméo Juge, Dafiné Ravelosona

Abstract: Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process… ▽ More Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process based on He$^{+}$ irradiation combined with elevated temperatures. Magnetic properties are similar for the whole series of samples, while the magnetic domain wall mobility is critically improved in the irradiated samples. By using an analytical model to extract nanoscale pinning parameters, we reveal important variations in the disorder of the crystallized samples. This work offers a unique opportunity to selectively analyze the effects of disorder on the domain wall dynamics, without the contribution of changes in the magnetic properties. Our results highlight the importance of evaluating the nanoscale pinning parameters of the material when designing devices based on domain wall motion, which in return can be a powerful tool to probe the disorder in ultra-thin magnetic films. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Comments: 22 pages, 12 figures. Currently under review

Absence of Walker breakdown in the dynamics of chiral Neel domain walls driven by in-plane strain gradients

Authors: Mouad Fattouhi, Felipe Garcia-Sanchez, Rocio Yanes, Victor Raposo, Eduardo Martinez, Luis Lopez-Diaz

Abstract: We investigate theoretically the motion of chiral Néel domain walls in perpendicularly magnetized systems driven by in-plane strain gradients. We show that such strain drives domain walls efficiently towards increasing tensile (compressive) strain for positive (negative) magnetostrictive materials. During their motion a local dam** torque that opposes the precessional torque due to the strain gr… ▽ More We investigate theoretically the motion of chiral Néel domain walls in perpendicularly magnetized systems driven by in-plane strain gradients. We show that such strain drives domain walls efficiently towards increasing tensile (compressive) strain for positive (negative) magnetostrictive materials. During their motion a local dam** torque that opposes the precessional torque due to the strain gradient arises. This torque prevents the onset of turbulent dynamics, and steady domain wall motion with constant velocity is asymptotically reached for any arbitrary large strain gradient. Withal, velocities in the range of 500 m/s can be obtained using voltage-induced strain under realistic conditions. △ Less

Submitted 11 March, 2022; originally announced March 2022.

Strain-controlled Domain Wall injection into nanowires for sensor applications

Authors: Giovanni Masciocchi, Mouad Fattouhi, Andreas Kehlberger, Luis Lopez-Diaz, Maria-Andromachi Syskaki, Mathias Kläui

Abstract: We investigate experimentally the effects of externally applied strain on the injection of 180$^\circ$ domain walls (DW) from a nucleation pad into magnetic nanowires, as typically used for DW-based sensors. In our study the strain, generated by substrate bending, induces in the material a uniaxial anisotropy due to magnetoelastic coupling. To compare the strain effects, $Co_{40}Fe_{40}B_{20}$,… ▽ More We investigate experimentally the effects of externally applied strain on the injection of 180$^\circ$ domain walls (DW) from a nucleation pad into magnetic nanowires, as typically used for DW-based sensors. In our study the strain, generated by substrate bending, induces in the material a uniaxial anisotropy due to magnetoelastic coupling. To compare the strain effects, $Co_{40}Fe_{40}B_{20}$, $Ni$ and $Ni_{82}Fe_{18}$ samples with in-plane magnetization and different magnetoelastic coupling are deposited. In these samples, we measure the magnetic field required for the injection of a DW, by imaging differential contrast in a magneto-optical Kerr microscope. We find that strain increases the DW injection field, however, the switching mechanism depends strongly on the direction of the strain with respect to the wire axis. We observe that low magnetic anisotropy facilitates the creation of a domain wall at the junction between the pad and the wire, whereas a strain-induced magnetic easy axis significantly increases the coercive field of the nucleation pad. Additionally, we find that the effects of mechanical strain can be counteracted by a magnetic uniaxial anisotropy perpendicular to the strain-induced easy axis. In $Co_{40}Fe_{40}B_{20}$, we show that this anisotropy can be induced by annealing in a magnetic field. We perform micromagnetic simulations to support the interpretation of our experimental findings. Our simulations show that the above described observations can be explained by the effective anisotropy in the device. The anisotropy influences the switching mechanism in the nucleation pad as well as the pinning of the DW at the wire entrance. As the DW injection is a key operation for sensor performances, the observations show that strain is imposing a lower limit for the sensor field operating window. △ Less

Submitted 31 August, 2021; originally announced August 2021.

Skyrmions in CeFeB Amorphous Nanodisks

Authors: Mouad Fattouhi, Moulay Youssef El Hafidi, Mohamed El Hafidi

Abstract: Rare earth Fe B permanent magnets are usually used because of their excellent magnetic performance at room temperature. The high price of these elements pushes some researchers to find new alternatives. From rare earth elements cerium (Ce) is considered as the most abundant and cheap, therefore, the interest was focused to study the properties of alloys based on this element in recent years. In th… ▽ More Rare earth Fe B permanent magnets are usually used because of their excellent magnetic performance at room temperature. The high price of these elements pushes some researchers to find new alternatives. From rare earth elements cerium (Ce) is considered as the most abundant and cheap, therefore, the interest was focused to study the properties of alloys based on this element in recent years. In this work, we investigate the magnetization behavior of CeFeB nanodisks in presence of Dzyaloshinskii Moriya interaction. We show that topological structures, Neel skyrmions, in particular, could be nucleated spontaneously in this kind of system. We also study skyrmions behavior in the presence of finite temperature. We demonstrate that CeFeB nanodisks could host magnetic skyrmions at room temperature. △ Less

Submitted 1 October, 2019; originally announced October 2019.

Comments: 6 pages, 3figures and 3 tables