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Improving Néel domain walls dynamics and skyrmion stability using He ion irradiation
Authors:
Cristina Balan,
Johannes W. van der Jagt,
Aymen Fassatoui,
Jose Peña Garcia,
Vincent Jeudy,
André Thiaville,
Jan Vogel,
Marlio Bonfim,
Laurent Ranno,
Dafiné Ravelosona,
Stefania Pizzini
Abstract:
Magnetization reversal and domain wall dynamics in Pt/Co/AlOx trilayers have been tuned by He+ ion irradiation. Fluences up to 1.5x10$^{15}$ ions/cm$^2$ strongly decrease the perpendicular magnetic anisotropy (PMA), without affecting neither the spontaneous magnetization nor the strength of the Dzyaloshinskii-Moriya interaction (DMI). This confirms the robustness of the DMI interaction against int…
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Magnetization reversal and domain wall dynamics in Pt/Co/AlOx trilayers have been tuned by He+ ion irradiation. Fluences up to 1.5x10$^{15}$ ions/cm$^2$ strongly decrease the perpendicular magnetic anisotropy (PMA), without affecting neither the spontaneous magnetization nor the strength of the Dzyaloshinskii-Moriya interaction (DMI). This confirms the robustness of the DMI interaction against interfacial chemical intermixing, already predicted by theory. In parallel with the decrease of the PMA in the irradiated samples, a strong decrease of the depinning field is observed. This allows the domain walls to reach large maximum velocities with lower magnetic fields with respect to those needed for the pristine films. Decoupling PMA from DMI can therefore be beneficial for the design of low energy devices based on domain wall dynamics. When the samples are irradiated with larger He+ fluences, the magnetization gets close to the out-of-plane/in-plane reorientation transition where 100nm size magnetic skyrmions are stabilized. We observe that as the He+ fluence increases, the skyrmion size decreases while these magnetic textures become more stable against the application of an external magnetic field.
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Submitted 8 March, 2023;
originally announced March 2023.
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Tuning the dynamics of chiral domain walls of ferrimagnetic films with the magneto-ionic effect
Authors:
Cristina Balan,
Jose Pena Garcia,
Aymen Fassatoui,
Jan Vogel,
Dayane de Souza Chaves,
Marlio Bonfim,
Jean-Pascal Rueff,
Laurent Ranno,
Stefania Pizzini
Abstract:
The manipulation of magnetism with a gate voltage is expected to lead the way towards the realization of energy-efficient spintronics devices and high-performance magnetic memories. Exploiting magneto-ionic effects under micro-patterned electrodes in solid-state devices adds the possibility to modify magnetic properties locally, in a non-volatile and reversible way. Tuning magnetic anisotropy, mag…
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The manipulation of magnetism with a gate voltage is expected to lead the way towards the realization of energy-efficient spintronics devices and high-performance magnetic memories. Exploiting magneto-ionic effects under micro-patterned electrodes in solid-state devices adds the possibility to modify magnetic properties locally, in a non-volatile and reversible way. Tuning magnetic anisotropy, magnetization and Dzyaloshinskii-Moriya interaction allows modifying at will the dynamics of non trivial magnetic textures such as skyrmions and chiral domain walls in magnetic race tracks. In this work, we illustrate efficient magneto-ionic effects in a ferrimagnetic Pt/Co/Tb stack using a ZrO2 thin layer as a solid state ionic conductor. When a thin layer of terbium is deposited on top of cobalt, it acquires a magnetic moment that aligns antiparallel to that of cobalt, reducing the effective magnetization. Below the micro-patterned electrodes, the voltage-driven migration of oxygen ions in a ZrO2 towards the ferrimagnetic stack partially oxidizes the Tb layer, leading to the local variation not only of the spontaneous magnetization, but also of the effective magnetic anisotropy and of the Dzyaloshinskii-Moriya interaction. This leads to a huge increase of the domain wall velocity, which varies from 10 m/s in the pristine state to 250 m/s after gating. This non-volatile and reversible tuning of the domain wall dynamics may lead to applications to reprogrammable magnetic memories or other spintronic devices.
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Submitted 6 May, 2022;
originally announced May 2022.
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Gate-controlled skyrmion and domain wall chirality
Authors:
Charles-Elie Fillion,
Johanna Fischer,
Raj Kumar,
Aymen Fassatoui,
Stefania Pizzini,
Laurent Ranno,
Djoudi Ourdani,
Mohamed Belmeguenai,
Yves Roussigné,
Salim-Mourad Chérif,
Stéphane Auffret,
Isabelle Joumard,
Olivier Boulle,
Gilles Gaudin,
Liliana Buda-Prejbeanu,
Claire Baraduc,
Hélène Béa
Abstract:
Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key…
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Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter. We probe the chirality of skyrmions and chiral domain walls by observing the direction of their current-induced motion and show that a gate voltage can reverse it. This local and dynamical reversal of the chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This control of chirality with 2 - 3 V gate voltage can be used for skyrmion-based logic devices, yielding new functionalities.
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Submitted 7 September, 2022; v1 submitted 8 April, 2022;
originally announced April 2022.
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Kinetics of ion migration in the electric field-driven manipulation of magnetic anisotropy of Pt/Co/oxide multilayers
Authors:
A. Fassatoui,
L. Ranno,
J. Peña Garcia,
C. Balan,
J. Vogel,
H. Béa,
S. Pizzini
Abstract:
Magneto-ionics, by which the magnetic properties of a thin layer can be modified through the migration of ions within a liquid or solid electrolyte, is a fast develo** research field. This is mainly due to the perspective of energy efficient magnetic devices, in which the magnetization direction is controlled not by a magnetic field or an electrical current, as done in traditional devices, but b…
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Magneto-ionics, by which the magnetic properties of a thin layer can be modified through the migration of ions within a liquid or solid electrolyte, is a fast develo** research field. This is mainly due to the perspective of energy efficient magnetic devices, in which the magnetization direction is controlled not by a magnetic field or an electrical current, as done in traditional devices, but by an electric field, leading to a considerable reduction of energy consumption.
In this work, the interfacial perpendicular magnetic anisotropy (PMA) of a series of Pt/Co/oxide trilayers covered by a ZrO$_2$ layer, acting as a ionic conductor, was finely tuned by a gate voltage at room temperature. The non-volatility and the time evolution of the effect point at oxygen ion migration across the ZrO$_2$ layer as the driving mechanism. A large variation of the PMA is obtained by modifying the degree of oxidation of the cobalt layer with the flux of oxygen ions: the easy magnetization axis can be switched reversibly from in-plane, with an under-oxidized Co, to in-plane, with an over-oxidized Co, passing through an out-of-plane magnetization with maximum PMA. The switching time between the different magnetic states is limited by the oxygen ion drift velocity through the multilayer structure. This was shown to depend exponentially on the applied bias voltage, and could be varied by over 5 orders of magnitude, from several minutes to a few ms. On the other hand, for a fixed gate-voltage, the oxidation of the cobalt layer decreases exponentially as a function of time. This behavior is in agreement with the theoretical model developed by Cabrera and Mott (1949) to explain the growth of very thin oxides at low temperatures. The possibility to explain the observed effect with a relatively simple theoretical model opens the possibility to engineers materials with optimized properties.
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Submitted 25 August, 2021;
originally announced August 2021.
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Magnetic domain wall dynamics in the precessional regime: influence of the Dzyaloshinskii-Moriya interaction
Authors:
J. Pena Gracia,
A. Fassatoui,
J. Vogel,
A. Thiaville,
S. Pizzini
Abstract:
The domain wall dynamics driven by an out of plane magnetic field was measured for a series of magnetic trilayers with different strengths of the interfacial Dzyaloshinskii-Moriya interaction (DMI). The features of the field-driven domain wall velocity curves strongly depend on the amplitude of the HD field stabilising chiral Néel walls. The measured Walker velocity, which in systems with large DM…
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The domain wall dynamics driven by an out of plane magnetic field was measured for a series of magnetic trilayers with different strengths of the interfacial Dzyaloshinskii-Moriya interaction (DMI). The features of the field-driven domain wall velocity curves strongly depend on the amplitude of the HD field stabilising chiral Néel walls. The measured Walker velocity, which in systems with large DMI is maintained after the Walker field giving rise to a velocity plateau up to the Slonczewski field HS, can be easily related to the DMI strength. Yet, when the DMI field HD and the domain wall demagnetising field HDW have comparable values, a careful analysis needs to be done in order to evaluate the impact of the DMI on the domain wall velocity. By means of a one-dimensional model and 2D simulations, we successfully extend this method to explain experimental results to cases where HD and HDW are comparable.
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Submitted 17 July, 2021; v1 submitted 16 December, 2020;
originally announced December 2020.
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Reversible vs. irreversible voltage manipulation of interfacial magnetic anisotropy in Pt/Co/oxide multilayers
Authors:
Aymen Fassatoui,
Jose Pena Garcia,
Jan Vogel,
Laurent Ranno,
Anne Bernand-Mantel,
Hélène Béa,
Sergio Pizzini,
Stefania Pizzini
Abstract:
The perpendicular magnetic anisotropy at the Co/oxide interface in Pt/Co/MOx (MOx = MgOx, AlOx, TbOx) was modified by an electric field using a 10 nm-thick ZrO2 as a solid electrolyte. The large voltage-driven modification of interfacial magnetic anisotropy and the non-volatility of the effect is explained in terms of the migration of oxygen ions towards/away from the Co/MOx interface. While the e…
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The perpendicular magnetic anisotropy at the Co/oxide interface in Pt/Co/MOx (MOx = MgOx, AlOx, TbOx) was modified by an electric field using a 10 nm-thick ZrO2 as a solid electrolyte. The large voltage-driven modification of interfacial magnetic anisotropy and the non-volatility of the effect is explained in terms of the migration of oxygen ions towards/away from the Co/MOx interface. While the effect is reversible in Pt/Co/AlOx and Pt/Co/TbOx, where the Co layer can be oxidised or reduced, in Pt/Co/MgOx the effect has been found to be irreversible. We propose that these differences may be related to the different nature of the ionic conduction within the MOx layers.
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Submitted 24 July, 2020;
originally announced July 2020.
