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Controlling many-body states by the electric-field effect in a two-dimensional material
Authors:
Linjun Li,
Eoin C. T. O Farrell,
Kian** Loh,
Goki Eda,
Barbaros Ozyilmaz,
Antonio H. Castro Neto
Abstract:
To understand complex physics of a system with strong electron electron interactions, it is ideal to control and monitor its properties while tuning an external electric field applied to the system. Indeed, complete electric field control of many body states in strongly correlated electron systems is fundamental to the next generation of condensed matter research and devices. However, the material…
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To understand complex physics of a system with strong electron electron interactions, it is ideal to control and monitor its properties while tuning an external electric field applied to the system. Indeed, complete electric field control of many body states in strongly correlated electron systems is fundamental to the next generation of condensed matter research and devices. However, the material must be thin enough to avoid shielding of the electric field in bulk material. Two-dimensional materials do not experience electrical screening, and their charge carrier density can be controlled by gating. 1T TiSe2 is a prototypical 2D material that shows charge density wave(CDW) and superconductivity in its phase diagram, presenting several similarities with other layered systems such as copper oxides, iron pnictides, crystals of rare-earth and actinide atoms. By studying 1T TiSe2 single crystals with thicknesses of 10 nm or less, encapsulated in 2D layers of hexagonal boron nitride, we achieve unprecedented control over the CDW transition temperature, tuned from 170 K to 40 K, and over the superconductivity transition temperature, tuned from a quantum critical point at 0 K up to 3 K. Electrically driving TiSe2 over different ordered electronic phases allows us to study the details of the phase transitions between many-body states. Observations of periodic oscillations of magnetoresistance induced by the Little Parks effect show that the appearance of superconductivity is directly correlated to the spatial texturing of the amplitude and phase of the superconductivity order parameter, corresponding to a 2D matrix of superconductivity. We infer that this superconductivity matrix is supported by a matrix of incommensurate CDW states embedded in the commensurate CDW states. Our results show that spatially modulated electronic states are fundamental to the appearance of 2D superconductivity.
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Submitted 15 July, 2016;
originally announced July 2016.
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A Proxy Acknowledgement Mechanism for TCP Variants in Mobile Ad Hoc Networks
Authors:
May Zin Oo,
Mazliza Othman,
Timothy O Farrell
Abstract:
A sequence number checking technique is proposed to improve the performance of TCP connections in mobile ad hoc networks. While a TCP connection is initialized, a routing protocol takes the responsibility for checking the hop count between a source and destination pair. If the hop count is greater than a predefined value, the routing protocol decides to use a proxy node. The responsibility of a pr…
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A sequence number checking technique is proposed to improve the performance of TCP connections in mobile ad hoc networks. While a TCP connection is initialized, a routing protocol takes the responsibility for checking the hop count between a source and destination pair. If the hop count is greater than a predefined value, the routing protocol decides to use a proxy node. The responsibility of a proxy node is to check the correctness of data packets and inform the missing packets by sending an acknowledgement from a proxy node to the source node. By doing so, the source node is able to retransmit any missing packet in advance without waiting until an end-to-end acknowledgement is received from the destination. Simulation results show that the proposed mechanism is able to increase throughput up to 55% in static network and decrease routing overhead up to 95% in mobile network.
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Submitted 18 October, 2015;
originally announced October 2015.
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Electronic transport in graphene-based heterostructures
Authors:
J. Y. Tan,
A. Avsar,
J. Balakrishnan,
G. K. W. Koon,
T. Taychatanapat,
E. C. T. O Farrell,
K. Watanabe,
T. Taniguchi,
G. Eda,
A. H. Castro Neto,
B. Ozyilmaz
Abstract:
While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this letter, we study the surface morphology of 2D BN, gallium selenide (GaSe) and transition metal dichalcogenides (tungsten disulfide (WS2) and molybden…
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While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this letter, we study the surface morphology of 2D BN, gallium selenide (GaSe) and transition metal dichalcogenides (tungsten disulfide (WS2) and molybdenum disulfide (MoS2)) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis show that these crystals have improved surface roughness (root mean square (rms) value of only ~ 0.1 nm) compared to conventional SiO2 substrate. While our results confirm that graphene devices exhibit very high electronic mobility on BN substrates, graphene devices on WS2 substrates (G/WS2) are equally promising for high quality electronic transport (~ 38,000 cm2/Vs at RT), followed by G/MoS2 (~ 10,000 cm2/Vs) and G/GaSe (~ 2,200 cm2/Vs). However, we observe a significant asymmetry in electron and hole conduction in G/WS2 and G/MoS2 heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.
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Submitted 10 June, 2014;
originally announced June 2014.
