In-memory photonic dot-product engine with electrically programmable weight banks
Authors:
Wen Zhou,
Bowei Dong,
Nikolaos Farmakidis,
Xuan Li,
Nathan Youngblood,
Kairan Huang,
Yuhan He,
C. David Wright,
Wolfram H. P. Pernice,
Harish Bhaskaran
Abstract:
Electronically reprogrammable photonic circuits based on phase-change chalcogenides present an avenue to resolve the von-Neumann bottleneck; however, implementation of such hybrid photonic-electronic processing has not achieved computational success. Here, we achieve this milestone by demonstrating an in-memory photonic-electronic dot-product engine, one that decouples electronic programming of ph…
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Electronically reprogrammable photonic circuits based on phase-change chalcogenides present an avenue to resolve the von-Neumann bottleneck; however, implementation of such hybrid photonic-electronic processing has not achieved computational success. Here, we achieve this milestone by demonstrating an in-memory photonic-electronic dot-product engine, one that decouples electronic programming of phase-change materials (PCMs) and photonic computation. Specifically, we develop non-volatile electronically reprogrammable PCM memory cells with a record-high 4-bit weight encoding, the lowest energy consumption per unit modulation depth (1.7 nJ per dB) for Erase operation (crystallization), and a high switching contrast (158.5%) using non-resonant silicon-on-insulator waveguide microheater devices. This enables us to perform parallel multiplications for image processing with a superior contrast-to-noise ratio (greater than 87.36) that leads to an enhanced computing accuracy (standard deviation less than 0.007). An in-memory hybrid computing system is developed in hardware for convolutional processing for recognizing images from the MNIST database with inferencing accuracies of 86% and 87%.
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Submitted 27 April, 2023;
originally announced April 2023.
Plasmonic nanogap enhanced phase change devices with dual electrical-optical functionality
Authors:
Nikolaos Farmakidis,
Nathan Youngblood,
Xuan Li,
James Tan,
Jacob L. Swett,
Zengguang Cheng,
David C Wright,
Wolfram HP Pernice,
Harish Bhaskaran
Abstract:
Modern-day computers use electrical signaling for processing and storing data which is bandwidth limited and power-hungry. These limitations are bypassed in the field of communications, where optical signaling is the norm. To exploit optical signaling in computing, however, new on-chip devices that work seamlessly in both electrical and optical domains are needed. Phase change devices can in princ…
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Modern-day computers use electrical signaling for processing and storing data which is bandwidth limited and power-hungry. These limitations are bypassed in the field of communications, where optical signaling is the norm. To exploit optical signaling in computing, however, new on-chip devices that work seamlessly in both electrical and optical domains are needed. Phase change devices can in principle provide such functionality, but doing so in a single device has proved elusive due to conflicting requirements of size-limited electrical switching and diffraction-limited photonic devices. Here, we combine plasmonics, photonics and electronics to deliver a novel integrated phase-change memory and computing cell that can be electrically or optically switched between binary or multilevel states, and read-out in either mode, thus merging computing and communications technologies.
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Submitted 19 November, 2018;
originally announced November 2018.
